KR20170016532A - 노광 장치 및 디바이스 제조 방법 - Google Patents

노광 장치 및 디바이스 제조 방법 Download PDF

Info

Publication number
KR20170016532A
KR20170016532A KR1020177003247A KR20177003247A KR20170016532A KR 20170016532 A KR20170016532 A KR 20170016532A KR 1020177003247 A KR1020177003247 A KR 1020177003247A KR 20177003247 A KR20177003247 A KR 20177003247A KR 20170016532 A KR20170016532 A KR 20170016532A
Authority
KR
South Korea
Prior art keywords
liquid
substrate
carbonic acid
acid gas
gas water
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
KR1020177003247A
Other languages
English (en)
Korean (ko)
Inventor
겐이치 시라이시
Original Assignee
가부시키가이샤 니콘
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 니콘 filed Critical 가부시키가이샤 니콘
Publication of KR20170016532A publication Critical patent/KR20170016532A/ko
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H01L21/0274—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020177003247A 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법 Abandoned KR20170016532A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004171115 2004-06-09
JPJP-P-2004-171115 2004-06-09
PCT/JP2005/010412 WO2005122218A1 (ja) 2004-06-09 2005-06-07 露光装置及びデバイス製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020157010305A Division KR101747662B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법

Publications (1)

Publication Number Publication Date
KR20170016532A true KR20170016532A (ko) 2017-02-13

Family

ID=35503354

Family Applications (9)

Application Number Title Priority Date Filing Date
KR1020177003247A Abandoned KR20170016532A (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020127003719A Expired - Fee Related KR101512884B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020137023317A Expired - Fee Related KR101440746B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020137023316A Expired - Fee Related KR101421915B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020127000370A Expired - Fee Related KR101422964B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020127025606A Expired - Fee Related KR101433496B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020157010305A Expired - Fee Related KR101747662B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020077000539A Expired - Fee Related KR101162128B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020147025197A Expired - Fee Related KR101561796B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법

Family Applications After (8)

Application Number Title Priority Date Filing Date
KR1020127003719A Expired - Fee Related KR101512884B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020137023317A Expired - Fee Related KR101440746B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020137023316A Expired - Fee Related KR101421915B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020127000370A Expired - Fee Related KR101422964B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020127025606A Expired - Fee Related KR101433496B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020157010305A Expired - Fee Related KR101747662B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020077000539A Expired - Fee Related KR101162128B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법
KR1020147025197A Expired - Fee Related KR101561796B1 (ko) 2004-06-09 2005-06-07 노광 장치 및 디바이스 제조 방법

Country Status (7)

Country Link
US (5) US8520184B2 (enExample)
EP (3) EP2966670B1 (enExample)
JP (12) JP4760708B2 (enExample)
KR (9) KR20170016532A (enExample)
CN (8) CN103605262B (enExample)
TW (7) TWI495960B (enExample)
WO (1) WO2005122218A1 (enExample)

Families Citing this family (111)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG185136A1 (en) * 2003-04-11 2012-11-29 Nikon Corp Cleanup method for optics in immersion lithography
TWI474380B (zh) 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
EP2261742A3 (en) 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
TWI245163B (en) 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP2765595B1 (en) * 2004-02-04 2016-12-14 Nikon Corporation Exposure apparatus, exposure method, and method for producing a device
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN103605262B (zh) 2004-06-09 2016-06-29 株式会社尼康 曝光装置及其维护方法、以及元件制造方法
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
WO2005124833A1 (ja) * 2004-06-21 2005-12-29 Nikon Corporation 露光装置及びその部材の洗浄方法、露光装置のメンテナンス方法、メンテナンス機器、並びにデバイス製造方法
JP2006032750A (ja) * 2004-07-20 2006-02-02 Canon Inc 液浸型投影露光装置、及びデバイス製造方法
US7385670B2 (en) 2004-10-05 2008-06-10 Asml Netherlands B.V. Lithographic apparatus, cleaning system and cleaning method for in situ removing contamination from a component in a lithographic apparatus
TW200628995A (en) * 2004-10-13 2006-08-16 Nikon Corp Exposure device, exposure method, and device manufacturing method
EP1833082A4 (en) * 2004-12-06 2010-03-24 Nikon Corp SUBSTRATE PROCESSING METHOD, EXPOSURE METHOD, EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
JP4752473B2 (ja) * 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4872916B2 (ja) * 2005-04-18 2012-02-08 株式会社ニコン 露光装置及び露光方法、並びにデバイス製造方法
WO2006115186A1 (ja) * 2005-04-25 2006-11-02 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
CN100555568C (zh) * 2005-04-28 2009-10-28 株式会社尼康 曝光方法及曝光装置、以及元件制造方法
US8125610B2 (en) * 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
WO2007066692A1 (ja) 2005-12-06 2007-06-14 Nikon Corporation 露光方法、露光装置、及びデバイス製造方法
US7405417B2 (en) * 2005-12-20 2008-07-29 Asml Netherlands B.V. Lithographic apparatus having a monitoring device for detecting contamination
KR101440630B1 (ko) * 2006-01-26 2014-09-15 가부시키가이샤 니콘 중첩 관리 방법 및 장치, 처리 장치, 측정 장치 및 노광 장치, 디바이스 제조 시스템 및 디바이스 제조 방법, 및 정보 기록 매체
KR20080097991A (ko) * 2006-02-03 2008-11-06 가부시키가이샤 니콘 기판 처리 방법, 기판 처리 시스템, 프로그램 및 기록매체
JP2007227543A (ja) * 2006-02-22 2007-09-06 Toshiba Corp 液浸光学装置、洗浄方法及び液浸露光方法
WO2007105645A1 (ja) * 2006-03-13 2007-09-20 Nikon Corporation 露光装置、メンテナンス方法、露光方法及びデバイス製造方法
US7602471B2 (en) * 2006-05-17 2009-10-13 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for particle monitoring in immersion lithography
CN101410948B (zh) * 2006-05-18 2011-10-26 株式会社尼康 曝光方法及装置、维护方法、以及组件制造方法
SG172607A1 (en) * 2006-05-22 2011-07-28 Nikon Corp Exposure method and apparatus, maintenance method, and device manufacturing method
JP5019170B2 (ja) 2006-05-23 2012-09-05 株式会社ニコン メンテナンス方法、露光方法及び装置、並びにデバイス製造方法
EP2043134A4 (en) 2006-06-30 2012-01-25 Nikon Corp MAINTENANCE METHOD, EXPOSURE METHOD AND DEVICE AND COMPONENT MANUFACTURING METHOD
CN100541713C (zh) * 2006-07-18 2009-09-16 东京毅力科创株式会社 高折射率液体循环系统、图案形成装置以及图案形成方法
US20080043211A1 (en) * 2006-08-21 2008-02-21 Nikon Corporation Apparatus and methods for recovering fluid in immersion lithography
WO2008026593A1 (en) * 2006-08-30 2008-03-06 Nikon Corporation Exposure apparatus, device production method, cleaning method, and cleaning member
US7826030B2 (en) * 2006-09-07 2010-11-02 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2008029884A1 (en) 2006-09-08 2008-03-13 Nikon Corporation Cleaning member, cleaning method and device manufacturing method
KR100830586B1 (ko) * 2006-12-12 2008-05-21 삼성전자주식회사 기판을 노광하는 장치 및 방법
US20080198347A1 (en) * 2007-02-16 2008-08-21 Canon Kabushiki Kaisha Immersion exposure apparatus and method of manufacturing device
JP4366407B2 (ja) * 2007-02-16 2009-11-18 キヤノン株式会社 露光装置及びデバイス製造方法
US7763869B2 (en) * 2007-03-23 2010-07-27 Asm Japan K.K. UV light irradiating apparatus with liquid filter
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US7841352B2 (en) * 2007-05-04 2010-11-30 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
JP4992558B2 (ja) * 2007-06-04 2012-08-08 株式会社ニコン 液浸露光装置、デバイス製造方法、及び評価方法
JP2008311372A (ja) * 2007-06-13 2008-12-25 Nomura Micro Sci Co Ltd 超純水中の溶存窒素の測定方法及び溶存窒素測定装置
JP5031459B2 (ja) * 2007-06-27 2012-09-19 株式会社アルバック 粗微移動装置及びそれを備えた液体供給装置
JP4490459B2 (ja) 2007-06-29 2010-06-23 キヤノン株式会社 露光装置及びデバイス製造方法
JP5018277B2 (ja) * 2007-07-02 2012-09-05 株式会社ニコン 露光装置、デバイス製造方法、及びクリーニング方法
US7817241B2 (en) * 2007-07-05 2010-10-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN104111587B (zh) 2007-07-18 2017-01-11 株式会社尼康 测量方法、载台装置、及曝光装置
US9019466B2 (en) * 2007-07-24 2015-04-28 Asml Netherlands B.V. Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system
US7916269B2 (en) * 2007-07-24 2011-03-29 Asml Netherlands B.V. Lithographic apparatus and contamination removal or prevention method
US9025126B2 (en) 2007-07-31 2015-05-05 Nikon Corporation Exposure apparatus adjusting method, exposure apparatus, and device fabricating method
US20090040482A1 (en) * 2007-08-10 2009-02-12 Canon Kabushiki Kaisha Exposure apparatus and device manufacturing method
JP2009071193A (ja) * 2007-09-14 2009-04-02 Canon Inc 露光装置及びデバイスの製造方法
NL1035942A1 (nl) 2007-09-27 2009-03-30 Asml Netherlands Bv Lithographic Apparatus and Method of Cleaning a Lithographic Apparatus.
SG151198A1 (en) 2007-09-27 2009-04-30 Asml Netherlands Bv Methods relating to immersion lithography and an immersion lithographic apparatus
JP5017232B2 (ja) * 2007-10-31 2012-09-05 エーエスエムエル ネザーランズ ビー.ブイ. クリーニング装置および液浸リソグラフィ装置
NL1036273A1 (nl) 2007-12-18 2009-06-19 Asml Netherlands Bv Lithographic apparatus and method of cleaning a surface of an immersion lithographic apparatus.
NL1036306A1 (nl) 2007-12-20 2009-06-23 Asml Netherlands Bv Lithographic apparatus and in-line cleaning apparatus.
US8339572B2 (en) 2008-01-25 2012-12-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20100039628A1 (en) * 2008-03-19 2010-02-18 Nikon Corporation Cleaning tool, cleaning method, and device fabricating method
US8654306B2 (en) 2008-04-14 2014-02-18 Nikon Corporation Exposure apparatus, cleaning method, and device fabricating method
TW201009895A (en) * 2008-08-11 2010-03-01 Nikon Corp Exposure apparatus, maintaining method and device fabricating method
US8435723B2 (en) 2008-09-11 2013-05-07 Nikon Corporation Pattern forming method and device production method
JP2010098172A (ja) * 2008-10-17 2010-04-30 Canon Inc 液体回収装置、露光装置及びデバイス製造方法
TW201017347A (en) * 2008-10-31 2010-05-01 Nikon Corp Exposure device, exposure method, and device manufacturing method
JP5245740B2 (ja) * 2008-11-13 2013-07-24 株式会社ニコン 露光装置及び露光方法
NL2003820A (en) * 2008-12-22 2010-06-23 Asml Netherlands Bv Fluid handling structure, table, lithographic apparatus, immersion lithographic apparatus, and device manufacturing methods.
KR101712219B1 (ko) 2009-03-10 2017-03-03 가부시키가이샤 니콘 노광 장치, 노광 방법, 및 디바이스 제조 방법
JP5453878B2 (ja) * 2009-03-31 2014-03-26 栗田工業株式会社 超純水製造設備及び超純水のモニタリング方法
WO2010117047A1 (ja) 2009-04-10 2010-10-14 株式会社ニコン 光学材料、光学素子、及びその製造方法
NL2004540A (en) * 2009-05-14 2010-11-18 Asml Netherlands Bv Lithographic apparatus and a method of operating the apparatus.
US20110001945A1 (en) 2009-07-01 2011-01-06 Masayuki Shiraishi Projection optical system, exposure apparatus, and assembly method thereof
US20110199591A1 (en) * 2009-10-14 2011-08-18 Nikon Corporation Exposure apparatus, exposing method, maintenance method and device fabricating method
JP5783376B2 (ja) * 2009-11-05 2015-09-24 株式会社ニコン フォーカステストマスク、フォーカス計測方法、露光装置、及び露光方法
WO2011096453A1 (ja) 2010-02-03 2011-08-11 株式会社ニコン 照明光学装置、照明方法、並びに露光方法及び装置
JP5131312B2 (ja) * 2010-04-26 2013-01-30 株式会社ニコン 露光装置、露光方法、及びデバイス製造方法
JPWO2012011512A1 (ja) * 2010-07-20 2013-09-09 株式会社ニコン 露光方法、露光装置および洗浄方法
US20120019803A1 (en) * 2010-07-23 2012-01-26 Nikon Corporation Cleaning method, liquid immersion member, immersion exposure apparatus, device fabricating method, program, and storage medium
US8795953B2 (en) * 2010-09-14 2014-08-05 Nikon Corporation Pattern forming method and method for producing device
US9291814B2 (en) 2010-09-22 2016-03-22 Nikon Corporation Spatial light modulator, exposure apparatus, and method for manufacturing device
KR102117986B1 (ko) 2010-09-27 2020-06-02 가부시키가이샤 니콘 공간 광변조기의 구동 방법, 노광용 패턴의 생성 방법, 노광 방법, 및 노광 장치
JP2012080007A (ja) * 2010-10-05 2012-04-19 Nikon Corp 露光装置、メンテナンス方法、及びデバイス製造方法
WO2012060410A1 (ja) * 2010-11-02 2012-05-10 株式会社ニコン 液体供給装置、液体供給方法、管理装置、管理方法、露光装置、露光方法、デバイス製造システム、デバイス製造方法、プログラム、及び記録媒体
WO2012169090A1 (ja) 2011-06-06 2012-12-13 株式会社ニコン 照明方法、照明光学装置、及び露光装置
JPWO2013031901A1 (ja) 2011-09-02 2015-03-23 株式会社ニコン 空間光変調器の検査方法及び装置、並びに露光方法及び装置
CN107479333B (zh) 2011-10-24 2020-09-01 株式会社尼康 照明光学系统、曝光装置及组件制造方法
CA2856196C (en) 2011-12-06 2020-09-01 Masco Corporation Of Indiana Ozone distribution in a faucet
CN104170054B (zh) 2012-01-18 2018-11-02 株式会社尼康 空间光调制器的驱动方法、曝光用图案的生成方法、以及曝光方法和装置
JP2012195606A (ja) * 2012-06-13 2012-10-11 Nikon Corp 露光装置、デバイス製造方法、及びクリーニング方法
WO2014010592A1 (ja) 2012-07-10 2014-01-16 株式会社ニコン マーク形成方法及びデバイス製造方法
JP6269964B2 (ja) 2012-07-10 2018-01-31 株式会社ニコン マーク形成方法
ITMI20121541A1 (it) * 2012-09-18 2014-03-19 Saati Spa Metodo per la realizzazione di tessuti in monofilo sintetico, parzialmente metallizzati, per applicazioni estetiche o di marcatura.
WO2014061760A1 (ja) 2012-10-19 2014-04-24 株式会社ニコン パターン形成方法及びデバイス製造方法
WO2014098220A1 (ja) 2012-12-20 2014-06-26 株式会社ニコン 評価方法及び装置、加工方法、並びに露光システム
TWI672788B (zh) 2013-03-27 2019-09-21 日商尼康股份有限公司 標記形成方法、標記檢測方法、及元件製造方法
JP6333039B2 (ja) 2013-05-16 2018-05-30 キヤノン株式会社 インプリント装置、デバイス製造方法およびインプリント方法
JP6315904B2 (ja) 2013-06-28 2018-04-25 キヤノン株式会社 インプリント方法、インプリント装置及びデバイスの製造方法
JP6306377B2 (ja) * 2014-03-11 2018-04-04 株式会社Screenホールディングス 描画方法および描画装置
TWI695235B (zh) * 2014-04-01 2020-06-01 日商尼康股份有限公司 圖案描繪裝置及元件製造方法
CN104035288A (zh) * 2014-06-05 2014-09-10 浙江大学 用于浸没式光刻机中的负压环境下的连续气液分离装置
CN105793960B (zh) * 2014-06-12 2018-09-11 富士电机株式会社 杂质添加装置、杂质添加方法以及半导体元件的制造方法
CN105983552B (zh) * 2015-02-15 2019-12-24 盛美半导体设备(上海)有限公司 一种防掉落的半导体清洗装置
JP6468041B2 (ja) * 2015-04-13 2019-02-13 富士電機株式会社 不純物導入装置、不純物導入方法及び半導体素子の製造方法
US11458214B2 (en) 2015-12-21 2022-10-04 Delta Faucet Company Fluid delivery system including a disinfectant device
CN107241545A (zh) * 2016-03-29 2017-10-10 齐发光电股份有限公司 对焦方法及对焦装置
JP6399037B2 (ja) 2016-05-18 2018-10-03 横河電機株式会社 対物レンズユニット及び液浸顕微鏡
CN108535963B (zh) * 2017-03-03 2021-04-02 中芯国际集成电路制造(上海)有限公司 边缘曝光装置、晶圆结构及其形成方法
CN108983552B (zh) * 2017-05-31 2020-01-24 上海微电子装备(集团)股份有限公司 一种移入移出机构及光刻机工件台移入移出装置
CN107255907B (zh) * 2017-08-17 2021-01-22 京东方科技集团股份有限公司 一种补偿装置、曝光装置及曝光补偿方法
NL2022731A (en) * 2018-04-16 2019-04-08 Asml Netherlands Bv Cleaning device and method of cleaning
KR20250050779A (ko) * 2022-08-19 2025-04-15 에이에스엠엘 네델란즈 비.브이. 컨디셔닝 시스템, 장치 및 방법

Family Cites Families (312)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US677257A (en) * 1900-01-16 1901-06-25 Daniel c oliver Mechanism for the manufacture of buffer-wheels, &c.
US3139101A (en) 1962-07-23 1964-06-30 Gen Motors Corp Sonic surface cleaner
GB1242527A (en) 1967-10-20 1971-08-11 Kodak Ltd Optical instruments
DE2963537D1 (en) 1979-07-27 1982-10-07 Tabarelli Werner W Optical lithographic method and apparatus for copying a pattern onto a semiconductor wafer
US4509852A (en) 1980-10-06 1985-04-09 Werner Tabarelli Apparatus for the photolithographic manufacture of integrated circuit elements
US4346164A (en) 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57117238A (en) 1981-01-14 1982-07-21 Nippon Kogaku Kk <Nikon> Exposing and baking device for manufacturing integrated circuit with illuminometer
JPS57153433A (en) 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
JPS58202448A (ja) 1982-05-21 1983-11-25 Hitachi Ltd 露光装置
JPS5919912A (ja) 1982-07-26 1984-02-01 Hitachi Ltd 液浸距離保持装置
DD221563A1 (de) 1983-09-14 1985-04-24 Mikroelektronik Zt Forsch Tech Immersionsobjektiv fuer die schrittweise projektionsabbildung einer maskenstruktur
DD224448A1 (de) 1984-03-01 1985-07-03 Zeiss Jena Veb Carl Einrichtung zur fotolithografischen strukturuebertragung
JPS6197918A (ja) 1984-10-19 1986-05-16 Hitachi Ltd X線露光装置
JPS6265326A (ja) 1985-09-18 1987-03-24 Hitachi Ltd 露光装置
JPH0782981B2 (ja) 1986-02-07 1995-09-06 株式会社ニコン 投影露光方法及び装置
JPH0695511B2 (ja) 1986-09-17 1994-11-24 大日本スクリ−ン製造株式会社 洗浄乾燥処理方法
WO1988004582A1 (en) * 1986-12-18 1988-06-30 Eastman Kodak Company Ultrasonic cleaning method and apparatus
JPS63157419A (ja) 1986-12-22 1988-06-30 Toshiba Corp 微細パタ−ン転写装置
JPS6463099A (en) 1987-09-01 1989-03-09 Kyoritsu Yuki Co Ltd Method for caking sludge
JPH047417A (ja) 1990-04-24 1992-01-10 Fujibayashi Concrete Kogyo Kk 重力式プレキャスト擁壁
JP2897355B2 (ja) 1990-07-05 1999-05-31 株式会社ニコン アライメント方法,露光装置,並びに位置検出方法及び装置
JPH04305915A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH04305917A (ja) 1991-04-02 1992-10-28 Nikon Corp 密着型露光装置
JPH0562877A (ja) 1991-09-02 1993-03-12 Yasuko Shinohara 光によるlsi製造縮小投影露光装置の光学系
JPH05100182A (ja) 1991-10-11 1993-04-23 Nikon Corp レーザトラツプ集塵装置及び集塵方法
JPH05304072A (ja) 1992-04-08 1993-11-16 Nec Corp 半導体装置の製造方法
JPH06459A (ja) 1992-06-19 1994-01-11 T H I Syst Kk 洗浄乾燥方法とその装置
JP3246615B2 (ja) 1992-07-27 2002-01-15 株式会社ニコン 照明光学装置、露光装置、及び露光方法
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
JP2753930B2 (ja) * 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
JPH06181157A (ja) 1992-12-15 1994-06-28 Nikon Corp 低発塵性の装置
JP2520833B2 (ja) 1992-12-21 1996-07-31 東京エレクトロン株式会社 浸漬式の液処理装置
JP3412704B2 (ja) 1993-02-26 2003-06-03 株式会社ニコン 投影露光方法及び装置、並びに露光装置
JPH07220990A (ja) 1994-01-28 1995-08-18 Hitachi Ltd パターン形成方法及びその露光装置
US5874820A (en) 1995-04-04 1999-02-23 Nikon Corporation Window frame-guided stage mechanism
US7365513B1 (en) 1994-04-01 2008-04-29 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
US5528118A (en) 1994-04-01 1996-06-18 Nikon Precision, Inc. Guideless stage with isolated reaction stage
US6989647B1 (en) 1994-04-01 2006-01-24 Nikon Corporation Positioning device having dynamically isolated frame, and lithographic device provided with such a positioning device
JP3555230B2 (ja) 1994-05-18 2004-08-18 株式会社ニコン 投影露光装置
JP3613288B2 (ja) 1994-10-18 2005-01-26 株式会社ニコン 露光装置用のクリーニング装置
US5623853A (en) 1994-10-19 1997-04-29 Nikon Precision Inc. Precision motion stage with single guide beam and follower stage
JP3647100B2 (ja) 1995-01-12 2005-05-11 キヤノン株式会社 検査装置およびこれを用いた露光装置やデバイス生産方法
JPH08195375A (ja) 1995-01-17 1996-07-30 Sony Corp 回転乾燥方法および回転乾燥装置
US6008500A (en) 1995-04-04 1999-12-28 Nikon Corporation Exposure apparatus having dynamically isolated reaction frame
JPH08316125A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
JPH08316124A (ja) 1995-05-19 1996-11-29 Hitachi Ltd 投影露光方法及び露光装置
US6297871B1 (en) 1995-09-12 2001-10-02 Nikon Corporation Exposure apparatus
US5798838A (en) 1996-02-28 1998-08-25 Nikon Corporation Projection exposure apparatus having function of detecting intensity distribution of spatial image, and method of detecting the same
US5825043A (en) 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
JPH10116760A (ja) 1996-10-08 1998-05-06 Nikon Corp 露光装置及び基板保持装置
US6033478A (en) 1996-11-05 2000-03-07 Applied Materials, Inc. Wafer support with improved temperature control
CN1244018C (zh) 1996-11-28 2006-03-01 株式会社尼康 曝光方法和曝光装置
JP4029182B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 露光方法
JP4029183B2 (ja) 1996-11-28 2008-01-09 株式会社ニコン 投影露光装置及び投影露光方法
US5815246A (en) 1996-12-24 1998-09-29 U.S. Philips Corporation Two-dimensionally balanced positioning device, and lithographic device provided with such a positioning device
KR100512450B1 (ko) 1996-12-24 2006-01-27 에이에스엠엘 네델란즈 비.브이. 두개의물체홀더를가진이차원적으로안정화된위치설정장치와이런위치설정장치를구비한리소그래픽장치
EP0900412B1 (en) 1997-03-10 2005-04-06 ASML Netherlands B.V. Lithographic apparatus comprising a positioning device having two object holders
JPH10255319A (ja) 1997-03-12 1998-09-25 Hitachi Maxell Ltd 原盤露光装置及び方法
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
US6268904B1 (en) 1997-04-23 2001-07-31 Nikon Corporation Optical exposure apparatus and photo-cleaning method
DE69817663T2 (de) 1997-04-23 2004-06-24 Nikon Corp. Optischer Belichtungsapparat und optisches Reinigungsverfahren
JP3817836B2 (ja) 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
JP2002511934A (ja) 1997-06-18 2002-04-16 ウルリッヒ・ジェイ・クルール 核酸バイオセンサ診断装置
JPH1116816A (ja) 1997-06-25 1999-01-22 Nikon Corp 投影露光装置、該装置を用いた露光方法、及び該装置を用いた回路デバイスの製造方法
US5980647A (en) 1997-07-15 1999-11-09 International Business Machines Corporation Metal removal cleaning process and apparatus
US6085764A (en) 1997-07-22 2000-07-11 Tdk Corporation Cleaning apparatus and method
JP3445120B2 (ja) 1997-09-30 2003-09-08 キヤノン株式会社 露光装置及びデバイスの製造方法
JP4210871B2 (ja) 1997-10-31 2009-01-21 株式会社ニコン 露光装置
JPH11162831A (ja) 1997-11-21 1999-06-18 Nikon Corp 投影露光装置及び投影露光方法
AU1175799A (en) 1997-11-21 1999-06-15 Nikon Corporation Projection aligner and projection exposure method
JPH11283903A (ja) 1998-03-30 1999-10-15 Nikon Corp 投影光学系検査装置及び同装置を備えた投影露光装置
JPH11166990A (ja) 1997-12-04 1999-06-22 Nikon Corp ステージ装置及び露光装置並びに走査型露光装置
JPH11176727A (ja) 1997-12-11 1999-07-02 Nikon Corp 投影露光装置
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
JPH11191525A (ja) 1997-12-26 1999-07-13 Nikon Corp 投影露光装置
JP4207240B2 (ja) 1998-02-20 2009-01-14 株式会社ニコン 露光装置用照度計、リソグラフィ・システム、照度計の較正方法およびマイクロデバイスの製造方法
US5913981A (en) * 1998-03-05 1999-06-22 Micron Technology, Inc. Method of rinsing and drying semiconductor wafers in a chamber with a moveable side wall
AU2747999A (en) 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
US5958143A (en) 1998-04-28 1999-09-28 The Regents Of The University Of California Cleaning process for EUV optical substrates
US6459472B1 (en) 1998-05-15 2002-10-01 Asml Netherlands B.V. Lithographic device
JP2000058436A (ja) 1998-08-11 2000-02-25 Nikon Corp 投影露光装置及び露光方法
JP2000091207A (ja) 1998-09-14 2000-03-31 Nikon Corp 投影露光装置及び投影光学系の洗浄方法
JP2000097616A (ja) 1998-09-22 2000-04-07 Nikon Corp 干渉計
JP3690569B2 (ja) * 1998-11-20 2005-08-31 大日本インキ化学工業株式会社 超純水の比抵抗調整装置及び調整方法
JP2000311933A (ja) 1999-04-27 2000-11-07 Canon Inc 基板保持装置、基板搬送システム、露光装置、塗布装置およびデバイス製造方法ならびに基板保持部クリーニング方法
JP2000354835A (ja) 1999-06-15 2000-12-26 Toshiba Corp 超音波洗浄処理方法及びその装置
JP2001013677A (ja) 1999-06-28 2001-01-19 Shin Etsu Chem Co Ltd ペリクル収納容器の洗浄方法
US6459672B1 (en) 1999-09-28 2002-10-01 Sony Corporation Optical head and optical disc device
WO2001035168A1 (en) 1999-11-10 2001-05-17 Massachusetts Institute Of Technology Interference lithography utilizing phase-locked scanning beams
US6496259B2 (en) 1999-12-28 2002-12-17 Robert John Barish Optical device providing relative alignment
US7187503B2 (en) 1999-12-29 2007-03-06 Carl Zeiss Smt Ag Refractive projection objective for immersion lithography
US6995930B2 (en) 1999-12-29 2006-02-07 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US6421932B2 (en) 2000-02-14 2002-07-23 Hitachi Electronics Engineering Co., Ltd. Method and apparatus for drying substrate plates
HU225403B1 (en) * 2000-03-13 2006-11-28 Andras Dr Boerzsoenyi Method and apparatus for calibration of flowmeter of liquid flowing in canal
JP3996730B2 (ja) 2000-03-31 2007-10-24 株式会社日立製作所 半導体部品の製造方法
US6466365B1 (en) 2000-04-07 2002-10-15 Corning Incorporated Film coated optical lithography elements and method of making
JP2001291855A (ja) 2000-04-08 2001-10-19 Takashi Miura 固体撮像素子
JP3531914B2 (ja) 2000-04-14 2004-05-31 キヤノン株式会社 光学装置、露光装置及びデバイス製造方法
JP2002014005A (ja) 2000-04-25 2002-01-18 Nikon Corp 空間像計測方法、結像特性計測方法、空間像計測装置及び露光装置
US20020041377A1 (en) 2000-04-25 2002-04-11 Nikon Corporation Aerial image measurement method and unit, optical properties measurement method and unit, adjustment method of projection optical system, exposure method and apparatus, making method of exposure apparatus, and device manufacturing method
CN1327888A (zh) * 2000-06-09 2001-12-26 株式会社平间理化研究所 基板表面处理装置
US6446365B1 (en) 2000-09-15 2002-09-10 Vermeer Manufacturing Company Nozzle mount for soft excavation
JP3840388B2 (ja) 2000-09-25 2006-11-01 東京エレクトロン株式会社 基板処理装置
KR100798769B1 (ko) * 2000-09-25 2008-01-29 동경 엘렉트론 주식회사 기판 처리장치
KR100866818B1 (ko) 2000-12-11 2008-11-04 가부시키가이샤 니콘 투영광학계 및 이 투영광학계를 구비한 노광장치
US6710850B2 (en) * 2000-12-22 2004-03-23 Nikon Corporation Exposure apparatus and exposure method
KR100555930B1 (ko) 2001-01-19 2006-03-03 에이에스엠엘 네델란즈 비.브이. 리소그래피 장치, 디바이스 제조방법 및 그 디바이스
CN1491427A (zh) 2001-02-06 2004-04-21 ������������ʽ���� 曝光装置、曝光法和器件制造法
TW550635B (en) * 2001-03-09 2003-09-01 Toshiba Corp Manufacturing system of electronic devices
US20020163629A1 (en) 2001-05-07 2002-11-07 Michael Switkes Methods and apparatus employing an index matching medium
DE10123027B4 (de) 2001-05-11 2005-07-21 Evotec Oai Ag Vorrichtung zur Untersuchung chemischer und/oder biologischer Proben
JP2002336804A (ja) 2001-05-15 2002-11-26 Nikon Corp 光学部品の洗浄方法及び露光装置
EP1276016B1 (en) * 2001-07-09 2009-06-10 Canon Kabushiki Kaisha Exposure apparatus
TW529172B (en) 2001-07-24 2003-04-21 Asml Netherlands Bv Imaging apparatus
US7145671B2 (en) 2001-08-16 2006-12-05 Hewlett-Packard Development Company, L.P. Image forming devices, methods of operating an image forming device, a method of providing consumable information, and a method of operating a printer
JP2003124089A (ja) 2001-10-09 2003-04-25 Nikon Corp 荷電粒子線露光装置及び露光方法
EP1313337A1 (de) 2001-11-15 2003-05-21 Siemens Aktiengesellschaft Verfahren zur Übertragung von Informationen in einem zellularen Funkkommunikationssystem mit Funksektoren
EP1329773A3 (en) 2002-01-18 2006-08-30 ASML Netherlands B.V. Lithographic apparatus, apparatus cleaning method, and device manufacturing method
CN100389480C (zh) * 2002-01-29 2008-05-21 株式会社尼康 曝光装置和曝光方法
DE10229249A1 (de) 2002-03-01 2003-09-04 Zeiss Carl Semiconductor Mfg Refraktives Projektionsobjektiv mit einer Taille
US7190527B2 (en) 2002-03-01 2007-03-13 Carl Zeiss Smt Ag Refractive projection objective
US7154676B2 (en) 2002-03-01 2006-12-26 Carl Zeiss Smt A.G. Very-high aperture projection objective
CN1747917A (zh) * 2002-03-06 2006-03-15 纳幕尔杜邦公司 在真空紫外下具有高透明度的耐辐射的有机化合物和其制备方法
US7092069B2 (en) 2002-03-08 2006-08-15 Carl Zeiss Smt Ag Projection exposure method and projection exposure system
DE10229818A1 (de) 2002-06-28 2004-01-15 Carl Zeiss Smt Ag Verfahren zur Fokusdetektion und Abbildungssystem mit Fokusdetektionssystem
DE10210899A1 (de) 2002-03-08 2003-09-18 Zeiss Carl Smt Ag Refraktives Projektionsobjektiv für Immersions-Lithographie
JP2003317472A (ja) * 2002-04-17 2003-11-07 Mitsubishi Electric Corp 半導体記憶装置
US20030200996A1 (en) * 2002-04-30 2003-10-30 Hiatt William Mark Method and system for cleaning a wafer chuck
KR20040104691A (ko) 2002-05-03 2004-12-10 칼 짜이스 에스엠테 아게 높은 개구를 갖는 투영 대물렌즈
US6853794B2 (en) 2002-07-02 2005-02-08 Lightel Technologies Inc. Apparatus for cleaning optical fiber connectors and fiber optic parts
US6696731B2 (en) * 2002-07-26 2004-02-24 Micrel, Inc. ESD protection device for enhancing reliability and for providing control of ESD trigger voltage
US20040021061A1 (en) 2002-07-30 2004-02-05 Frederik Bijkerk Photodiode, charged-coupled device and method for the production
JP2004071855A (ja) 2002-08-07 2004-03-04 Tokyo Electron Ltd 基板処理装置及び基板処理方法
WO2004019128A2 (en) 2002-08-23 2004-03-04 Nikon Corporation Projection optical system and method for photolithography and exposure apparatus and method using same
JP3922637B2 (ja) 2002-08-30 2007-05-30 本田技研工業株式会社 サイドエアバッグシステム
TW559895B (en) * 2002-09-27 2003-11-01 Taiwan Semiconductor Mfg Exposure system and exposure method thereof
US7093375B2 (en) 2002-09-30 2006-08-22 Lam Research Corporation Apparatus and method for utilizing a meniscus in substrate processing
US6988326B2 (en) 2002-09-30 2006-01-24 Lam Research Corporation Phobic barrier meniscus separation and containment
US6954993B1 (en) 2002-09-30 2005-10-18 Lam Research Corporation Concentric proximity processing head
US7367345B1 (en) 2002-09-30 2008-05-06 Lam Research Corporation Apparatus and method for providing a confined liquid for immersion lithography
CN1245668C (zh) * 2002-10-14 2006-03-15 台湾积体电路制造股份有限公司 曝光系统及其曝光方法
US6788477B2 (en) 2002-10-22 2004-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Apparatus for method for immersion lithography
CN101470360B (zh) 2002-11-12 2013-07-24 Asml荷兰有限公司 光刻装置和器件制造方法
SG121822A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420298B1 (en) * 2002-11-12 2013-02-20 ASML Netherlands B.V. Lithographic apparatus
EP1420299B1 (en) * 2002-11-12 2011-01-05 ASML Netherlands B.V. Immersion lithographic apparatus and device manufacturing method
SG135052A1 (en) * 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1420300B1 (en) * 2002-11-12 2015-07-29 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7110081B2 (en) 2002-11-12 2006-09-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE60335595D1 (de) 2002-11-12 2011-02-17 Asml Netherlands Bv Lithographischer Apparat mit Immersion und Verfahren zur Herstellung einer Vorrichtung
CN100568101C (zh) * 2002-11-12 2009-12-09 Asml荷兰有限公司 光刻装置和器件制造方法
EP1429188B1 (en) 2002-11-12 2013-06-19 ASML Netherlands B.V. Lithographic projection apparatus
SG131766A1 (en) 2002-11-18 2007-05-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
DE10253679A1 (de) 2002-11-18 2004-06-03 Infineon Technologies Ag Optische Einrichtung zur Verwendung bei einem Lithographie-Verfahren, insbesondere zur Herstellung eines Halbleiter-Bauelements, sowie optisches Lithographieverfahren
EP1420302A1 (en) * 2002-11-18 2004-05-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1424599B1 (en) * 2002-11-29 2008-03-12 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
TW200412617A (en) 2002-12-03 2004-07-16 Nikon Corp Optical illumination device, method for adjusting optical illumination device, exposure device and exposure method
DE10258718A1 (de) 2002-12-09 2004-06-24 Carl Zeiss Smt Ag Projektionsobjektiv, insbesondere für die Mikrolithographie, sowie Verfahren zur Abstimmung eines Projektionsobjektives
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
CN101872135B (zh) 2002-12-10 2013-07-31 株式会社尼康 曝光设备和器件制造法
KR20120127755A (ko) 2002-12-10 2012-11-23 가부시키가이샤 니콘 노광장치 및 디바이스 제조방법
JP4525062B2 (ja) * 2002-12-10 2010-08-18 株式会社ニコン 露光装置及びデバイス製造方法、露光システム
KR101085372B1 (ko) 2002-12-10 2011-11-21 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US6992750B2 (en) 2002-12-10 2006-01-31 Canon Kabushiki Kaisha Exposure apparatus and method
EP1573730B1 (en) 2002-12-13 2009-02-25 Koninklijke Philips Electronics N.V. Liquid removal in a method and device for irradiating spots on a layer
US7399978B2 (en) 2002-12-19 2008-07-15 Koninklijke Philips Electronics N.V. Method and device for irradiating spots on a layer
DE60314668T2 (de) 2002-12-19 2008-03-06 Koninklijke Philips Electronics N.V. Verfahren und anordnung zum bestrahlen einer schicht mittels eines lichtpunkts
US7010958B2 (en) 2002-12-19 2006-03-14 Asml Holding N.V. High-resolution gas gauge proximity sensor
US6781670B2 (en) 2002-12-30 2004-08-24 Intel Corporation Immersion lithography
JP2004007417A (ja) 2003-02-10 2004-01-08 Fujitsu Ltd 情報提供システム
TWI247339B (en) 2003-02-21 2006-01-11 Asml Holding Nv Lithographic printing with polarized light
US6943941B2 (en) 2003-02-27 2005-09-13 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7206059B2 (en) 2003-02-27 2007-04-17 Asml Netherlands B.V. Stationary and dynamic radial transverse electric polarizer for high numerical aperture systems
US7029832B2 (en) 2003-03-11 2006-04-18 Samsung Electronics Co., Ltd. Immersion lithography methods using carbon dioxide
US20050164522A1 (en) 2003-03-24 2005-07-28 Kunz Roderick R. Optical fluids, and systems and methods of making and using the same
KR101177331B1 (ko) 2003-04-09 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
KR101177330B1 (ko) 2003-04-10 2012-08-30 가부시키가이샤 니콘 액침 리소그래피 장치
SG2014015184A (en) 2003-04-10 2015-06-29 Nippon Kogaku Kk Environmental system including vacuum scavange for an immersion lithography apparatus
WO2004090633A2 (en) 2003-04-10 2004-10-21 Nikon Corporation An electro-osmotic element for an immersion lithography apparatus
WO2004093160A2 (en) 2003-04-10 2004-10-28 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
WO2004092830A2 (en) 2003-04-11 2004-10-28 Nikon Corporation Liquid jet and recovery system for immersion lithography
SG185136A1 (en) 2003-04-11 2012-11-29 Nikon Corp Cleanup method for optics in immersion lithography
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
EP1614000B1 (en) 2003-04-17 2012-01-18 Nikon Corporation Immersion lithographic apparatus
JP4146755B2 (ja) 2003-05-09 2008-09-10 松下電器産業株式会社 パターン形成方法
JP4025683B2 (ja) 2003-05-09 2007-12-26 松下電器産業株式会社 パターン形成方法及び露光装置
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
EP1624481A4 (en) 2003-05-15 2008-01-30 Nikon Corp EXPOSURE DEVICE AND METHOD FOR MANUFACTURING COMPONENTS
TWI282487B (en) 2003-05-23 2007-06-11 Canon Kk Projection optical system, exposure apparatus, and device manufacturing method
TWI474380B (zh) 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
TW201415536A (zh) 2003-05-23 2014-04-16 尼康股份有限公司 曝光方法及曝光裝置以及元件製造方法
JP2005277363A (ja) * 2003-05-23 2005-10-06 Nikon Corp 露光装置及びデバイス製造方法
CN100541717C (zh) 2003-05-28 2009-09-16 株式会社尼康 曝光方法、曝光装置以及器件制造方法
JP2004356356A (ja) * 2003-05-29 2004-12-16 Oki Electric Ind Co Ltd 洗浄終了判定方法および洗浄装置
US7317504B2 (en) * 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP2261742A3 (en) * 2003-06-11 2011-05-25 ASML Netherlands BV Lithographic apparatus and device manufacturing method.
JP4084710B2 (ja) 2003-06-12 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4054285B2 (ja) 2003-06-12 2008-02-27 松下電器産業株式会社 パターン形成方法
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
JP4084712B2 (ja) 2003-06-23 2008-04-30 松下電器産業株式会社 パターン形成方法
JP4029064B2 (ja) 2003-06-23 2008-01-09 松下電器産業株式会社 パターン形成方法
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
EP1498778A1 (en) * 2003-06-27 2005-01-19 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1639391A4 (en) 2003-07-01 2009-04-29 Nikon Corp USE OF ISOTOPICALLY SPECIFIED FLUIDS AS OPTICAL ELEMENTS
KR101211451B1 (ko) 2003-07-09 2012-12-12 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7384149B2 (en) 2003-07-21 2008-06-10 Asml Netherlands B.V. Lithographic projection apparatus, gas purging method and device manufacturing method and purge gas supply system
US7006209B2 (en) 2003-07-25 2006-02-28 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US20050021372A1 (en) * 2003-07-25 2005-01-27 Dimagi, Inc. Interactive motivation systems and methods for self-care compliance
KR101642670B1 (ko) 2003-07-28 2016-07-25 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
US7779781B2 (en) * 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7370659B2 (en) 2003-08-06 2008-05-13 Micron Technology, Inc. Photolithographic stepper and/or scanner machines including cleaning devices and methods of cleaning photolithographic stepper and/or scanner machines
US7700267B2 (en) 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7061578B2 (en) 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US7579135B2 (en) 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7085075B2 (en) 2003-08-12 2006-08-01 Carl Zeiss Smt Ag Projection objectives including a plurality of mirrors with lenses ahead of mirror M3
US6844206B1 (en) 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
JP2005072404A (ja) * 2003-08-27 2005-03-17 Sony Corp 露光装置および半導体装置の製造方法
JP4333281B2 (ja) * 2003-08-28 2009-09-16 株式会社ニコン 液浸光学系及び液体媒体並びに露光装置
US6954256B2 (en) 2003-08-29 2005-10-11 Asml Netherlands B.V. Gradient immersion lithography
JP4305095B2 (ja) * 2003-08-29 2009-07-29 株式会社ニコン 光学部品の洗浄機構を搭載した液浸投影露光装置及び液浸光学部品洗浄方法
US7070915B2 (en) 2003-08-29 2006-07-04 Tokyo Electron Limited Method and system for drying a substrate
TWI245163B (en) * 2003-08-29 2005-12-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101477850B1 (ko) 2003-08-29 2014-12-30 가부시키가이샤 니콘 액체회수장치, 노광장치, 노광방법 및 디바이스 제조방법
KR101242886B1 (ko) 2003-08-29 2013-03-12 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7014966B2 (en) 2003-09-02 2006-03-21 Advanced Micro Devices, Inc. Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems
KR101523180B1 (ko) 2003-09-03 2015-05-26 가부시키가이샤 니콘 액침 리소그래피용 유체를 제공하기 위한 장치 및 방법
KR101248325B1 (ko) 2003-09-26 2013-03-27 가부시키가이샤 니콘 투영노광장치 및 투영노광장치의 세정방법, 메인터넌스방법 그리고 디바이스의 제조방법
US6961186B2 (en) 2003-09-26 2005-11-01 Takumi Technology Corp. Contact printing using a magnified mask image
EP1670040B1 (en) * 2003-09-29 2012-08-08 Nikon Corporation Projection exposure apparatus, projection exposure method, and device manufacturing method
US7369217B2 (en) 2003-10-03 2008-05-06 Micronic Laser Systems Ab Method and device for immersion lithography
JP2005136374A (ja) * 2003-10-06 2005-05-26 Matsushita Electric Ind Co Ltd 半導体製造装置及びそれを用いたパターン形成方法
EP1524558A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7678527B2 (en) 2003-10-16 2010-03-16 Intel Corporation Methods and compositions for providing photoresist with improved properties for contacting liquids
US20070105050A1 (en) 2003-11-05 2007-05-10 Dsm Ip Assets B.V. Method and apparatus for producing microchips
US7924397B2 (en) 2003-11-06 2011-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Anti-corrosion layer on objective lens for liquid immersion lithography applications
US7545481B2 (en) 2003-11-24 2009-06-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8854602B2 (en) 2003-11-24 2014-10-07 Asml Netherlands B.V. Holding device for an optical element in an objective
US7125652B2 (en) 2003-12-03 2006-10-24 Advanced Micro Devices, Inc. Immersion lithographic process using a conforming immersion medium
KR101200654B1 (ko) 2003-12-15 2012-11-12 칼 짜이스 에스엠티 게엠베하 고 개구율 및 평평한 단부면을 가진 투사 대물렌즈
WO2005059654A1 (en) 2003-12-15 2005-06-30 Carl Zeiss Smt Ag Objective as a microlithography projection objective with at least one liquid lens
KR101941351B1 (ko) 2003-12-15 2019-01-22 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US7292315B2 (en) * 2003-12-19 2007-11-06 Asml Masktools B.V. Optimized polarization illumination
JP5102492B2 (ja) 2003-12-19 2012-12-19 カール・ツァイス・エスエムティー・ゲーエムベーハー 結晶素子を有するマイクロリソグラフィー投影用対物レンズ
US20050185269A1 (en) 2003-12-19 2005-08-25 Carl Zeiss Smt Ag Catadioptric projection objective with geometric beam splitting
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography
JP4323946B2 (ja) 2003-12-19 2009-09-02 キヤノン株式会社 露光装置
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7589818B2 (en) 2003-12-23 2009-09-15 Asml Netherlands B.V. Lithographic apparatus, alignment apparatus, device manufacturing method, and a method of converting an apparatus
US7119884B2 (en) 2003-12-24 2006-10-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20050147920A1 (en) 2003-12-30 2005-07-07 Chia-Hui Lin Method and system for immersion lithography
US7088422B2 (en) 2003-12-31 2006-08-08 International Business Machines Corporation Moving lens for immersion optical lithography
US7145641B2 (en) 2003-12-31 2006-12-05 Asml Netherlands, B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
KR101911681B1 (ko) * 2004-01-05 2018-10-25 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
JP4371822B2 (ja) 2004-01-06 2009-11-25 キヤノン株式会社 露光装置
JP4429023B2 (ja) 2004-01-07 2010-03-10 キヤノン株式会社 露光装置及びデバイス製造方法
US20050153424A1 (en) 2004-01-08 2005-07-14 Derek Coon Fluid barrier with transparent areas for immersion lithography
KR101179350B1 (ko) 2004-01-14 2012-09-11 칼 짜이스 에스엠티 게엠베하 반사굴절식 투영 대물렌즈
ATE539383T1 (de) 2004-01-16 2012-01-15 Zeiss Carl Smt Gmbh Projektionssystem mit einem polarisationsmodulierenden optischen element mit variabler dicke
WO2005069078A1 (en) 2004-01-19 2005-07-28 Carl Zeiss Smt Ag Microlithographic projection exposure apparatus with immersion projection lens
WO2005071491A2 (en) 2004-01-20 2005-08-04 Carl Zeiss Smt Ag Exposure apparatus and measuring device for a projection lens
US7026259B2 (en) 2004-01-21 2006-04-11 International Business Machines Corporation Liquid-filled balloons for immersion lithography
US7391501B2 (en) 2004-01-22 2008-06-24 Intel Corporation Immersion liquids with siloxane polymer for immersion lithography
US8852850B2 (en) 2004-02-03 2014-10-07 Rochester Institute Of Technology Method of photolithography using a fluid and a system thereof
WO2005076084A1 (en) 2004-02-09 2005-08-18 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
US7050146B2 (en) 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101166007B1 (ko) 2004-02-10 2012-07-17 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 메인터넌스 방법 및노광 방법
WO2005081067A1 (en) 2004-02-13 2005-09-01 Carl Zeiss Smt Ag Projection objective for a microlithographic projection exposure apparatus
WO2005081030A1 (en) 2004-02-18 2005-09-01 Corning Incorporated Catadioptric imaging system for high numerical aperture imaging with deep ultraviolet light
JP2005236047A (ja) * 2004-02-19 2005-09-02 Canon Inc 露光装置及び方法
JP5076497B2 (ja) 2004-02-20 2012-11-21 株式会社ニコン 露光装置、液体の供給方法及び回収方法、露光方法、並びにデバイス製造方法
US20050205108A1 (en) 2004-03-16 2005-09-22 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for immersion lithography lens cleaning
US7027125B2 (en) 2004-03-25 2006-04-11 International Business Machines Corporation System and apparatus for photolithography
US7084960B2 (en) 2004-03-29 2006-08-01 Intel Corporation Lithography using controlled polarization
US7227619B2 (en) 2004-04-01 2007-06-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7034917B2 (en) 2004-04-01 2006-04-25 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and device manufactured thereby
US7295283B2 (en) 2004-04-02 2007-11-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7712905B2 (en) 2004-04-08 2010-05-11 Carl Zeiss Smt Ag Imaging system with mirror group
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7271878B2 (en) 2004-04-22 2007-09-18 International Business Machines Corporation Wafer cell for immersion lithography
US7244665B2 (en) 2004-04-29 2007-07-17 Micron Technology, Inc. Wafer edge ring structures and methods of formation
US7379159B2 (en) 2004-05-03 2008-05-27 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8054448B2 (en) 2004-05-04 2011-11-08 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US20060244938A1 (en) 2004-05-04 2006-11-02 Karl-Heinz Schuster Microlitographic projection exposure apparatus and immersion liquid therefore
US7091502B2 (en) 2004-05-12 2006-08-15 Taiwan Semiconductor Manufacturing, Co., Ltd. Apparatus and method for immersion lithography
KR101391470B1 (ko) 2004-05-17 2014-05-07 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7486381B2 (en) 2004-05-21 2009-02-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101368523B1 (ko) 2004-06-04 2014-02-27 칼 짜이스 에스엠테 게엠베하 광학적 결상 시스템의 결상 품질을 측정하기 위한 시스템
US7123348B2 (en) * 2004-06-08 2006-10-17 Asml Netherlands B.V Lithographic apparatus and method utilizing dose control
CN103605262B (zh) 2004-06-09 2016-06-29 株式会社尼康 曝光装置及其维护方法、以及元件制造方法
JP4543767B2 (ja) * 2004-06-10 2010-09-15 株式会社ニコン 露光装置及びデバイス製造方法
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2006024692A (ja) * 2004-07-07 2006-01-26 Toshiba Corp レジストパターン形成方法
JP2006024819A (ja) * 2004-07-09 2006-01-26 Renesas Technology Corp 液浸露光装置、及び電子デバイスの製造方法
US7224427B2 (en) 2004-08-03 2007-05-29 Taiwan Semiconductor Manufacturing Company, Ltd. Megasonic immersion lithography exposure apparatus and method
US7304715B2 (en) 2004-08-13 2007-12-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
FR2877604B3 (fr) * 2004-11-10 2007-04-06 Erca Formseal Sa Procede de fabrication de recipients par thermoformage et de mise en place de banderoles de decor sur ces recipients.
US7446850B2 (en) 2004-12-03 2008-11-04 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
KR101339887B1 (ko) 2004-12-06 2013-12-10 가부시키가이샤 니콘 메인터넌스 방법, 메인터넌스 기기, 노광 장치, 및디바이스 제조 방법
US7248334B2 (en) 2004-12-07 2007-07-24 Asml Netherlands B.V. Sensor shield
JP4752473B2 (ja) 2004-12-09 2011-08-17 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7450217B2 (en) 2005-01-12 2008-11-11 Asml Netherlands B.V. Exposure apparatus, coatings for exposure apparatus, lithographic apparatus, device manufacturing method, and device manufactured thereby
US7262422B2 (en) 2005-07-01 2007-08-28 Spansion Llc Use of supercritical fluid to dry wafer and clean lens in immersion lithography
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7522295B2 (en) * 2006-11-07 2009-04-21 Tokyo Electron Limited Consecutive measurement of structures formed on a semiconductor wafer using a polarized reflectometer
US9019466B2 (en) 2007-07-24 2015-04-28 Asml Netherlands B.V. Lithographic apparatus, reflective member and a method of irradiating the underside of a liquid supply system
US7822906B2 (en) * 2007-07-30 2010-10-26 Via Technologies, Inc. Data flush methods
JP4672763B2 (ja) * 2008-09-16 2011-04-20 株式会社東芝 レジストパターン形成方法

Also Published As

Publication number Publication date
KR101512884B1 (ko) 2015-04-16
TW201802619A (zh) 2018-01-16
KR101421915B1 (ko) 2014-07-22
EP1783821A4 (en) 2009-07-08
KR101422964B1 (ko) 2014-07-24
HK1221289A1 (zh) 2017-05-26
US20070291239A1 (en) 2007-12-20
KR20130103819A (ko) 2013-09-24
JP5056866B2 (ja) 2012-10-24
US8704997B2 (en) 2014-04-22
KR101433496B1 (ko) 2014-08-22
CN101095213A (zh) 2007-12-26
TWI417669B (zh) 2013-12-01
HK1189400A1 (zh) 2014-06-06
KR101162128B1 (ko) 2012-07-03
US20130335717A1 (en) 2013-12-19
JP4666014B2 (ja) 2011-04-06
JP2007019548A (ja) 2007-01-25
JP2015232734A (ja) 2015-12-24
JP4665883B2 (ja) 2011-04-06
CN105911821A (zh) 2016-08-31
JP4760708B2 (ja) 2011-08-31
JP2008227555A (ja) 2008-09-25
CN101819386A (zh) 2010-09-01
TW201403261A (zh) 2014-01-16
KR20140117687A (ko) 2014-10-07
TW201219999A (en) 2012-05-16
US9645505B2 (en) 2017-05-09
JP2015029155A (ja) 2015-02-12
TWI495960B (zh) 2015-08-11
EP2966670A1 (en) 2016-01-13
EP1783821A1 (en) 2007-05-09
JP5573878B2 (ja) 2014-08-20
JP2014060459A (ja) 2014-04-03
EP2966670B1 (en) 2017-02-22
JP6288025B2 (ja) 2018-03-07
KR101747662B1 (ko) 2017-06-15
KR20120014256A (ko) 2012-02-16
US20170235238A1 (en) 2017-08-17
EP1783821B1 (en) 2015-08-05
TW201235801A (en) 2012-09-01
CN103439863A (zh) 2013-12-11
US20080239260A1 (en) 2008-10-02
JP5170279B2 (ja) 2013-03-27
US20070242247A1 (en) 2007-10-18
CN108490741A (zh) 2018-09-04
CN103605262B (zh) 2016-06-29
JP6308316B2 (ja) 2018-04-11
HK1101294A1 (en) 2007-10-12
JP2017116969A (ja) 2017-06-29
KR20150048921A (ko) 2015-05-07
CN105467775B (zh) 2018-04-10
CN101776850B (zh) 2013-03-20
CN103605262A (zh) 2014-02-26
KR20130106447A (ko) 2013-09-27
TW201407299A (zh) 2014-02-16
TWI483086B (zh) 2015-05-01
JP5904258B2 (ja) 2016-04-13
HK1215755A1 (en) 2016-09-09
US8520184B2 (en) 2013-08-27
CN101819386B (zh) 2013-10-09
CN101095213B (zh) 2010-05-05
TW200611082A (en) 2006-04-01
KR101440746B1 (ko) 2014-09-17
JP5804046B2 (ja) 2015-11-04
KR20120026633A (ko) 2012-03-19
KR101561796B1 (ko) 2015-10-19
JP2018036677A (ja) 2018-03-08
JP6319402B2 (ja) 2018-05-09
JP2017021392A (ja) 2017-01-26
WO2005122218A1 (ja) 2005-12-22
KR20070026791A (ko) 2007-03-08
EP3203498A1 (en) 2017-08-09
JPWO2005122218A1 (ja) 2008-04-10
TWI584076B (zh) 2017-05-21
HK1193656A1 (zh) 2014-09-26
CN105467775A (zh) 2016-04-06
KR20120115598A (ko) 2012-10-18
TWI547767B (zh) 2016-09-01
TWI613529B (zh) 2018-02-01
CN103439863B (zh) 2016-01-06
JP2012134558A (ja) 2012-07-12
JP2011139104A (ja) 2011-07-14
TW201635045A (zh) 2016-10-01
CN105911821B (zh) 2019-03-15
US8525971B2 (en) 2013-09-03
CN101776850A (zh) 2010-07-14
JP2010103579A (ja) 2010-05-06

Similar Documents

Publication Publication Date Title
KR101747662B1 (ko) 노광 장치 및 디바이스 제조 방법
HK1226820A1 (en) Exposure system

Legal Events

Date Code Title Description
A107 Divisional application of patent
A201 Request for examination
PA0104 Divisional application for international application

St.27 status event code: A-0-1-A10-A18-div-PA0104

St.27 status event code: A-0-1-A10-A16-div-PA0104

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

NORF Unpaid initial registration fee
PC1904 Unpaid initial registration fee

St.27 status event code: A-2-2-U10-U14-oth-PC1904

St.27 status event code: N-2-6-B10-B12-nap-PC1904

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000