JP4760708B2 - 露光装置、露光方法、及びデバイス製造方法、メンテナンス方法 - Google Patents

露光装置、露光方法、及びデバイス製造方法、メンテナンス方法 Download PDF

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Publication number
JP4760708B2
JP4760708B2 JP2006514514A JP2006514514A JP4760708B2 JP 4760708 B2 JP4760708 B2 JP 4760708B2 JP 2006514514 A JP2006514514 A JP 2006514514A JP 2006514514 A JP2006514514 A JP 2006514514A JP 4760708 B2 JP4760708 B2 JP 4760708B2
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JP
Japan
Prior art keywords
liquid
measurement
substrate
exposure
optical system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2006514514A
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English (en)
Japanese (ja)
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JPWO2005122218A1 (ja
Inventor
健一 白石
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Nikon Corp
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Nikon Corp
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Priority to JP2006514514A priority Critical patent/JP4760708B2/ja
Publication of JPWO2005122218A1 publication Critical patent/JPWO2005122218A1/ja
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Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/42—Projection printing apparatus, e.g. enlarger, copying camera for automatic sequential copying of the same original
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Epidemiology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Toxicology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006514514A 2004-06-09 2005-06-07 露光装置、露光方法、及びデバイス製造方法、メンテナンス方法 Expired - Fee Related JP4760708B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006514514A JP4760708B2 (ja) 2004-06-09 2005-06-07 露光装置、露光方法、及びデバイス製造方法、メンテナンス方法

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2004171115 2004-06-09
JP2004171115 2004-06-09
PCT/JP2005/010412 WO2005122218A1 (ja) 2004-06-09 2005-06-07 露光装置及びデバイス製造方法
JP2006514514A JP4760708B2 (ja) 2004-06-09 2005-06-07 露光装置、露光方法、及びデバイス製造方法、メンテナンス方法

Related Child Applications (3)

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JP2006274332A Division JP4665883B2 (ja) 2004-06-09 2006-10-05 露光装置及び露光方法、メンテナンス方法、デバイス製造方法
JP2008164527A Division JP4666014B2 (ja) 2004-06-09 2008-06-24 露光装置、メンテナンス方法、及びデバイス製造方法
JP2010026922A Division JP5056866B2 (ja) 2004-06-09 2010-02-09 露光装置、デバイス製造方法、及び洗浄方法

Publications (2)

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JPWO2005122218A1 JPWO2005122218A1 (ja) 2008-04-10
JP4760708B2 true JP4760708B2 (ja) 2011-08-31

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Application Number Title Priority Date Filing Date
JP2006514514A Expired - Fee Related JP4760708B2 (ja) 2004-06-09 2005-06-07 露光装置、露光方法、及びデバイス製造方法、メンテナンス方法
JP2006274332A Expired - Fee Related JP4665883B2 (ja) 2004-06-09 2006-10-05 露光装置及び露光方法、メンテナンス方法、デバイス製造方法
JP2008164527A Expired - Fee Related JP4666014B2 (ja) 2004-06-09 2008-06-24 露光装置、メンテナンス方法、及びデバイス製造方法
JP2010026922A Expired - Fee Related JP5056866B2 (ja) 2004-06-09 2010-02-09 露光装置、デバイス製造方法、及び洗浄方法
JP2011089245A Expired - Fee Related JP5170279B2 (ja) 2004-06-09 2011-04-13 露光装置及び洗浄方法
JP2012083218A Expired - Fee Related JP5573878B2 (ja) 2004-06-09 2012-03-30 露光装置及びデバイス製造方法
JP2013272925A Expired - Fee Related JP5804046B2 (ja) 2004-06-09 2013-12-27 液浸露光装置、液浸露光方法及びデバイス製造方法
JP2014228342A Expired - Lifetime JP5904258B2 (ja) 2004-06-09 2014-11-10 液浸露光装置及びそのメンテナンス方法並びにデバイス製造方法
JP2015189284A Expired - Fee Related JP6288025B2 (ja) 2004-06-09 2015-09-28 露光装置及び露光方法並びにデバイス製造方法
JP2016216513A Expired - Lifetime JP6319402B2 (ja) 2004-06-09 2016-11-04 露光装置、デバイス製造方法及び露光方法
JP2017069847A Expired - Fee Related JP6308316B2 (ja) 2004-06-09 2017-03-31 露光装置、デバイス製造方法及び露光方法
JP2017237927A Ceased JP2018036677A (ja) 2004-06-09 2017-12-12 露光装置及びデバイス製造方法

Family Applications After (11)

Application Number Title Priority Date Filing Date
JP2006274332A Expired - Fee Related JP4665883B2 (ja) 2004-06-09 2006-10-05 露光装置及び露光方法、メンテナンス方法、デバイス製造方法
JP2008164527A Expired - Fee Related JP4666014B2 (ja) 2004-06-09 2008-06-24 露光装置、メンテナンス方法、及びデバイス製造方法
JP2010026922A Expired - Fee Related JP5056866B2 (ja) 2004-06-09 2010-02-09 露光装置、デバイス製造方法、及び洗浄方法
JP2011089245A Expired - Fee Related JP5170279B2 (ja) 2004-06-09 2011-04-13 露光装置及び洗浄方法
JP2012083218A Expired - Fee Related JP5573878B2 (ja) 2004-06-09 2012-03-30 露光装置及びデバイス製造方法
JP2013272925A Expired - Fee Related JP5804046B2 (ja) 2004-06-09 2013-12-27 液浸露光装置、液浸露光方法及びデバイス製造方法
JP2014228342A Expired - Lifetime JP5904258B2 (ja) 2004-06-09 2014-11-10 液浸露光装置及びそのメンテナンス方法並びにデバイス製造方法
JP2015189284A Expired - Fee Related JP6288025B2 (ja) 2004-06-09 2015-09-28 露光装置及び露光方法並びにデバイス製造方法
JP2016216513A Expired - Lifetime JP6319402B2 (ja) 2004-06-09 2016-11-04 露光装置、デバイス製造方法及び露光方法
JP2017069847A Expired - Fee Related JP6308316B2 (ja) 2004-06-09 2017-03-31 露光装置、デバイス製造方法及び露光方法
JP2017237927A Ceased JP2018036677A (ja) 2004-06-09 2017-12-12 露光装置及びデバイス製造方法

Country Status (7)

Country Link
US (5) US8520184B2 (enExample)
EP (3) EP2966670B1 (enExample)
JP (12) JP4760708B2 (enExample)
KR (9) KR101440746B1 (enExample)
CN (8) CN105467775B (enExample)
TW (7) TWI613529B (enExample)
WO (1) WO2005122218A1 (enExample)

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