KR101008294B1 - 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 - Google Patents
나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 Download PDFInfo
- Publication number
- KR101008294B1 KR101008294B1 KR1020097023682A KR20097023682A KR101008294B1 KR 101008294 B1 KR101008294 B1 KR 101008294B1 KR 1020097023682 A KR1020097023682 A KR 1020097023682A KR 20097023682 A KR20097023682 A KR 20097023682A KR 101008294 B1 KR101008294 B1 KR 101008294B1
- Authority
- KR
- South Korea
- Prior art keywords
- nanowires
- nanowire
- core
- group
- diameter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/107—Subwavelength-diameter waveguides, e.g. nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02603—Nanowires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
- H01L21/02645—Seed materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02653—Vapour-liquid-solid growth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/122—Nanowire, nanosheet or nanotube semiconductor bodies oriented at angles to substrates, e.g. perpendicular to substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/117—Shapes of semiconductor bodies
- H10D62/118—Nanostructure semiconductor bodies
- H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
- H10D62/123—Nanowire, nanosheet or nanotube semiconductor bodies comprising junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/81—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials of structures exhibiting quantum-confinement effects, e.g. single quantum wells; of structures having periodic or quasi-periodic potential variation
- H10D62/812—Single quantum well structures
- H10D62/813—Quantum wire structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N30/204—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
- H10N30/2041—Beam type
- H10N30/2042—Cantilevers, i.e. having one fixed end
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/852—Composite materials, e.g. having 1-3 or 2-2 type connectivity
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0101—Neon [Ne]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01018—Argon [Ar]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01024—Chromium [Cr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01025—Manganese [Mn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0103—Zinc [Zn]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01031—Gallium [Ga]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01052—Tellurium [Te]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01058—Cerium [Ce]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0106—Neodymium [Nd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01061—Promethium [Pm]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01074—Tungsten [W]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01077—Iridium [Ir]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01083—Bismuth [Bi]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01084—Polonium [Po]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/049—Nitrides composed of metals from groups of the periodic table
- H01L2924/0495—5th Group
- H01L2924/04953—TaN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13062—Junction field-effect transistor [JFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
- H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- Y10S977/763—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less formed along or from crystallographic terraces or ridges
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- Y10S977/764—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less with specified packing density
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less
- Y10S977/765—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less with specified cross-sectional profile, e.g. belt-shaped
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
- Y10S977/95—Electromagnetic energy
- Y10S977/951—Laser
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
- Y10T428/24994—Fiber embedded in or on the surface of a polymeric matrix
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
- Y10T428/24994—Fiber embedded in or on the surface of a polymeric matrix
- Y10T428/249949—Two or more chemically different fibers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2916—Rod, strand, filament or fiber including boron or compound thereof [not as steel]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2918—Rod, strand, filament or fiber including free carbon or carbide or therewith [not as steel]
- Y10T428/292—In coating or impregnation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2933—Coated or with bond, impregnation or core
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2933—Coated or with bond, impregnation or core
- Y10T428/294—Coated or with bond, impregnation or core including metal or compound thereof [excluding glass, ceramic and asbestos]
- Y10T428/2958—Metal or metal compound in coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/2973—Particular cross section
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
- Y10T428/2913—Rod, strand, filament or fiber
- Y10T428/298—Physical dimension
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Optics & Photonics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Composite Materials (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Led Devices (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Thin Film Transistor (AREA)
- Woven Fabrics (AREA)
- Powder Metallurgy (AREA)
- Inorganic Fibers (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US28067601P | 2001-03-30 | 2001-03-30 | |
| US60/280,676 | 2001-03-30 | ||
| US34920602P | 2002-01-15 | 2002-01-15 | |
| US60/349,206 | 2002-01-15 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7012856A Division KR20040000418A (ko) | 2001-03-30 | 2002-03-29 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터제조되는 디바이스 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090127194A KR20090127194A (ko) | 2009-12-09 |
| KR101008294B1 true KR101008294B1 (ko) | 2011-01-13 |
Family
ID=26960448
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020097023682A Expired - Fee Related KR101008294B1 (ko) | 2001-03-30 | 2002-03-29 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 |
| KR10-2003-7012856A Ceased KR20040000418A (ko) | 2001-03-30 | 2002-03-29 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터제조되는 디바이스 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2003-7012856A Ceased KR20040000418A (ko) | 2001-03-30 | 2002-03-29 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터제조되는 디바이스 |
Country Status (10)
| Country | Link |
|---|---|
| US (6) | US6882051B2 (enExample) |
| EP (2) | EP1374309A1 (enExample) |
| JP (4) | JP2004532133A (enExample) |
| KR (2) | KR101008294B1 (enExample) |
| CN (1) | CN1306619C (enExample) |
| AU (1) | AU2002307008C1 (enExample) |
| CA (1) | CA2442985C (enExample) |
| MX (1) | MXPA03008935A (enExample) |
| TW (1) | TW554388B (enExample) |
| WO (1) | WO2002080280A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8885238B2 (en) | 2011-10-11 | 2014-11-11 | Samsung Electronics Co., Ltd. | Light position controlling apparatus and method of manufacturing the same |
Families Citing this family (835)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6700550B2 (en) | 1997-01-16 | 2004-03-02 | Ambit Corporation | Optical antenna array for harmonic generation, mixing and signal amplification |
| US20080035370A1 (en) * | 1999-08-27 | 2008-02-14 | Lex Kosowsky | Device applications for voltage switchable dielectric material having conductive or semi-conductive organic material |
| US20100044079A1 (en) * | 1999-08-27 | 2010-02-25 | Lex Kosowsky | Metal Deposition |
| US7825491B2 (en) * | 2005-11-22 | 2010-11-02 | Shocking Technologies, Inc. | Light-emitting device using voltage switchable dielectric material |
| WO2001017320A1 (en) * | 1999-08-27 | 2001-03-08 | Lex Kosowsky | Current carrying structure using voltage switchable dielectric material |
| US7446030B2 (en) * | 1999-08-27 | 2008-11-04 | Shocking Technologies, Inc. | Methods for fabricating current-carrying structures using voltage switchable dielectric materials |
| US7695644B2 (en) * | 1999-08-27 | 2010-04-13 | Shocking Technologies, Inc. | Device applications for voltage switchable dielectric material having high aspect ratio particles |
| US20100044080A1 (en) * | 1999-08-27 | 2010-02-25 | Lex Kosowsky | Metal Deposition |
| US6720240B2 (en) * | 2000-03-29 | 2004-04-13 | Georgia Tech Research Corporation | Silicon based nanospheres and nanowires |
| US6919119B2 (en) | 2000-05-30 | 2005-07-19 | The Penn State Research Foundation | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films |
| US20060175601A1 (en) * | 2000-08-22 | 2006-08-10 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| WO2002017362A2 (en) * | 2000-08-22 | 2002-02-28 | President And Fellows Of Harvard College | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| EP1342075B1 (en) * | 2000-12-11 | 2008-09-10 | President And Fellows Of Harvard College | Device contaning nanosensors for detecting an analyte and its method of manufacture |
| WO2002048432A2 (en) * | 2000-12-15 | 2002-06-20 | The Arizona Board Of Regents | Method for patterning metal using nanoparticle containing precursors |
| JP2002203757A (ja) * | 2000-12-28 | 2002-07-19 | Toshiba Corp | 境界条件表示プログラムおよび半導体装置の製造方法 |
| US6782154B2 (en) * | 2001-02-12 | 2004-08-24 | Rensselaer Polytechnic Institute | Ultrafast all-optical switch using carbon nanotube polymer composites |
| CA2451882A1 (en) * | 2001-03-14 | 2002-09-19 | University Of Massachusetts | Nanofabrication |
| KR101008294B1 (ko) * | 2001-03-30 | 2011-01-13 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 |
| US7098393B2 (en) * | 2001-05-18 | 2006-08-29 | California Institute Of Technology | Thermoelectric device with multiple, nanometer scale, elements |
| CA2447728A1 (en) * | 2001-05-18 | 2003-01-16 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| DE10127351A1 (de) * | 2001-06-06 | 2002-12-19 | Infineon Technologies Ag | Elektronischer Chip und elektronische Chip-Anordnung |
| US6593666B1 (en) * | 2001-06-20 | 2003-07-15 | Ambient Systems, Inc. | Energy conversion systems using nanometer scale assemblies and methods for using same |
| US7186381B2 (en) * | 2001-07-20 | 2007-03-06 | Regents Of The University Of California | Hydrogen gas sensor |
| US20030015708A1 (en) * | 2001-07-23 | 2003-01-23 | Primit Parikh | Gallium nitride based diodes with low forward voltage and low reverse current operation |
| US6921462B2 (en) | 2001-12-17 | 2005-07-26 | Intel Corporation | Method and apparatus for producing aligned carbon nanotube thermal interface structure |
| US6559544B1 (en) * | 2002-03-28 | 2003-05-06 | Alan Roth | Programmable interconnect for semiconductor devices |
| AU2003215840A1 (en) * | 2002-03-28 | 2003-10-13 | Koninklijke Philips Electronics N.V. | Nanowire and electronic device |
| US20040026684A1 (en) * | 2002-04-02 | 2004-02-12 | Nanosys, Inc. | Nanowire heterostructures for encoding information |
| US6872645B2 (en) | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
| JP4051988B2 (ja) * | 2002-04-09 | 2008-02-27 | 富士ゼロックス株式会社 | 光電変換素子および光電変換装置 |
| US8809867B2 (en) * | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
| KR101363377B1 (ko) * | 2002-04-15 | 2014-02-14 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 무극성 질화 갈륨 박막의 전위 감소 |
| WO2005064643A1 (en) | 2003-04-15 | 2005-07-14 | The Regents Of The University Of California | NON-POLAR (A1,B,In,Ga)N QUANTUM WELLS |
| WO2003096438A2 (en) * | 2002-05-08 | 2003-11-20 | Massachusetts Institute Of Technology | Self-assembled quantum dot superlattice thermoelectric materials and devices |
| US6979489B2 (en) * | 2002-05-15 | 2005-12-27 | Rutgers, The State University Of New Jersey | Zinc oxide nanotip and fabricating method thereof |
| US8294025B2 (en) * | 2002-06-08 | 2012-10-23 | Solarity, Llc | Lateral collection photovoltaics |
| WO2003107046A2 (en) * | 2002-06-18 | 2003-12-24 | Nanoopto Corporation | Optical components exhibiting enhanced functionality and method of making same |
| US7335908B2 (en) * | 2002-07-08 | 2008-02-26 | Qunano Ab | Nanostructures and methods for manufacturing the same |
| WO2004010552A1 (en) * | 2002-07-19 | 2004-01-29 | President And Fellows Of Harvard College | Nanoscale coherent optical components |
| WO2004034467A2 (en) * | 2002-07-25 | 2004-04-22 | California Institute Of Technology | Sublithographic nanoscale memory architecture |
| AU2003302316A1 (en) * | 2002-08-13 | 2004-06-30 | Massachusetts Institute Of Technology | Semiconductor nanocrystal heterostructures |
| AU2003301770A1 (en) * | 2002-08-16 | 2004-06-07 | The Regents Of The University Of California | Functional bimorph composite nanotapes and methods of fabrication |
| US6849911B2 (en) * | 2002-08-30 | 2005-02-01 | Nano-Proprietary, Inc. | Formation of metal nanowires for use as variable-range hydrogen sensors |
| US7287412B2 (en) * | 2003-06-03 | 2007-10-30 | Nano-Proprietary, Inc. | Method and apparatus for sensing hydrogen gas |
| US7237429B2 (en) * | 2002-08-30 | 2007-07-03 | Nano-Proprietary, Inc. | Continuous-range hydrogen sensors |
| CA2497451A1 (en) | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Organic species that facilitate charge transfer to or from nanostructures |
| WO2004022637A2 (en) * | 2002-09-05 | 2004-03-18 | Nanosys, Inc. | Nanocomposites |
| WO2004027822A2 (en) | 2002-09-05 | 2004-04-01 | Nanosys, Inc. | Oriented nanostructures and methods of preparing |
| US20050126628A1 (en) * | 2002-09-05 | 2005-06-16 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
| US7572393B2 (en) | 2002-09-05 | 2009-08-11 | Nanosys Inc. | Organic species that facilitate charge transfer to or from nanostructures |
| US6878871B2 (en) * | 2002-09-05 | 2005-04-12 | Nanosys, Inc. | Nanostructure and nanocomposite based compositions and photovoltaic devices |
| WO2004050547A2 (en) * | 2002-09-12 | 2004-06-17 | The Trustees Of Boston College | Metal oxide nanostructures with hierarchical morphology |
| US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
| US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
| US7619562B2 (en) * | 2002-09-30 | 2009-11-17 | Nanosys, Inc. | Phased array systems |
| KR101191632B1 (ko) * | 2002-09-30 | 2012-10-17 | 나노시스, 인크. | 대형 나노 인에이블 매크로전자 기판 및 그 사용 |
| US7051945B2 (en) | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
| CA2499944A1 (en) * | 2002-09-30 | 2004-04-15 | Nanosys, Inc. | Integrated displays using nanowire transistors |
| FR2845519B1 (fr) * | 2002-10-03 | 2005-07-01 | Commissariat Energie Atomique | Procede de fabrication de nano-structure filaire dans un film semi-conducteur |
| US6841235B2 (en) * | 2002-10-11 | 2005-01-11 | General Motors Corporation | Metallic nanowire and method of making the same |
| WO2004033370A1 (en) * | 2002-10-11 | 2004-04-22 | Massachusetts Institute Of Technology | Nanopellets and method of making nanopellets |
| CN100459181C (zh) * | 2002-11-05 | 2009-02-04 | 皇家飞利浦电子股份有限公司 | 纳米结构、具有这种纳米结构的电子器件和纳米结构的制造方法 |
| EP1565397A1 (en) * | 2002-11-18 | 2005-08-24 | Koninklijke Philips Electronics N.V. | Dispersion of nanowires of semiconductor material |
| US7211143B2 (en) * | 2002-12-09 | 2007-05-01 | The Regents Of The University Of California | Sacrificial template method of fabricating a nanotube |
| CA2509257A1 (en) * | 2002-12-09 | 2004-12-23 | The Regents Of The University Of California | Sacrificial template method of fabricating a nanotube |
| US7898005B2 (en) * | 2002-12-09 | 2011-03-01 | The Regents Of The University Of California | Inorganic nanotubes and electro-fluidic devices fabricated therefrom |
| US7355216B2 (en) * | 2002-12-09 | 2008-04-08 | The Regents Of The University Of California | Fluidic nanotubes and devices |
| US6969897B2 (en) * | 2002-12-10 | 2005-11-29 | Kim Ii John | Optoelectronic devices employing fibers for light collection and emission |
| JP4428921B2 (ja) * | 2002-12-13 | 2010-03-10 | キヤノン株式会社 | ナノ構造体、電子デバイス、及びその製造方法 |
| US7001669B2 (en) | 2002-12-23 | 2006-02-21 | The Administration Of The Tulane Educational Fund | Process for the preparation of metal-containing nanostructured films |
| WO2004065926A1 (en) | 2003-01-23 | 2004-08-05 | William Marsh Rice University | Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices |
| US20070003472A1 (en) * | 2003-03-24 | 2007-01-04 | Tolt Zhidan L | Electron emitting composite based on regulated nano-structures and a cold electron source using the composite |
| US7432522B2 (en) * | 2003-04-04 | 2008-10-07 | Qunano Ab | Nanowhiskers with pn junctions, doped nanowhiskers, and methods for preparing them |
| CA2522358A1 (en) | 2003-04-04 | 2004-10-14 | Startskottet 22286 Ab | Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them |
| US20060249391A1 (en) * | 2003-04-09 | 2006-11-09 | Sungho Jin | High resolution electrolytic lithography, apparatus therefor and resulting products |
| US7135057B2 (en) * | 2003-04-16 | 2006-11-14 | Hewlett-Packard Development Company, L.P. | Gas storage medium and methods |
| US7056409B2 (en) | 2003-04-17 | 2006-06-06 | Nanosys, Inc. | Structures, systems and methods for joining articles and materials and uses therefor |
| US7074294B2 (en) | 2003-04-17 | 2006-07-11 | Nanosys, Inc. | Structures, systems and methods for joining articles and materials and uses therefor |
| US7972616B2 (en) | 2003-04-17 | 2011-07-05 | Nanosys, Inc. | Medical device applications of nanostructured surfaces |
| US20080213588A1 (en) * | 2003-04-21 | 2008-09-04 | Jin-Ming Chen | Synthesis of composite nanofibers for applications in lithium batteries |
| TW200428467A (en) * | 2003-04-25 | 2004-12-16 | Hoya Corp | Electrode material and semiconductor |
| US7803574B2 (en) | 2003-05-05 | 2010-09-28 | Nanosys, Inc. | Medical device applications of nanostructured surfaces |
| US7434476B2 (en) * | 2003-05-07 | 2008-10-14 | Califronia Institute Of Technology | Metallic thin film piezoresistive transduction in micromechanical and nanomechanical devices and its application in self-sensing SPM probes |
| US7302856B2 (en) * | 2003-05-07 | 2007-12-04 | California Institute Of Technology | Strain sensors based on nanowire piezoresistor wires and arrays |
| US7552645B2 (en) * | 2003-05-07 | 2009-06-30 | California Institute Of Technology | Detection of resonator motion using piezoresistive signal downmixing |
| CN1791987B (zh) * | 2003-05-19 | 2011-06-15 | 皇家飞利浦电子股份有限公司 | 可调发光半导体器件 |
| US20070178615A1 (en) * | 2003-05-21 | 2007-08-02 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Semiconductor nanocrystal-based optical devices and method of preparing such devices |
| US20040241507A1 (en) * | 2003-05-30 | 2004-12-02 | Schubert Peter J. | Method and apparatus for storage of elemental hydrogen |
| US7199498B2 (en) * | 2003-06-02 | 2007-04-03 | Ambient Systems, Inc. | Electrical assemblies using molecular-scale electrically conductive and mechanically flexible beams and methods for application of same |
| US7095645B2 (en) * | 2003-06-02 | 2006-08-22 | Ambient Systems, Inc. | Nanoelectromechanical memory cells and data storage devices |
| US7148579B2 (en) * | 2003-06-02 | 2006-12-12 | Ambient Systems, Inc. | Energy conversion systems utilizing parallel array of automatic switches and generators |
| US7256435B1 (en) * | 2003-06-02 | 2007-08-14 | Hewlett-Packard Development Company, L.P. | Multilevel imprint lithography |
| US20040238907A1 (en) * | 2003-06-02 | 2004-12-02 | Pinkerton Joseph F. | Nanoelectromechanical transistors and switch systems |
| US20070240491A1 (en) * | 2003-06-03 | 2007-10-18 | Nano-Proprietary, Inc. | Hydrogen Sensor |
| KR100554155B1 (ko) * | 2003-06-09 | 2006-02-22 | 학교법인 포항공과대학교 | 금속/반도체 나노막대 이종구조를 이용한 전극 구조물 및그 제조 방법 |
| US7265037B2 (en) * | 2003-06-20 | 2007-09-04 | The Regents Of The University Of California | Nanowire array and nanowire solar cells and methods for forming the same |
| KR100593264B1 (ko) * | 2003-06-26 | 2006-06-26 | 학교법인 포항공과대학교 | p-타입 반도체 박막과 n-타입 산화아연(ZnO)계나노막대의 이종접합 구조체, 이의 제법 및 이를 이용한소자 |
| CN1826662A (zh) * | 2003-07-08 | 2006-08-30 | 库纳诺公司 | 包括纳米晶须的探针结构、其制造方法以及形成纳米晶须的方法 |
| KR101132076B1 (ko) * | 2003-08-04 | 2012-04-02 | 나노시스, 인크. | 나노선 복합체 및 나노선 복합체로부터 전자 기판을제조하기 위한 시스템 및 프로세스 |
| DE10335813B4 (de) * | 2003-08-05 | 2009-02-12 | Infineon Technologies Ag | IC-Chip mit Nanowires |
| US7241479B2 (en) * | 2003-08-22 | 2007-07-10 | Clemson University | Thermal CVD synthesis of nanostructures |
| AU2004317007A1 (en) * | 2003-09-03 | 2005-09-15 | Life Patch International, Inc. | Personal diagnostic devices and related methods |
| US20070157873A1 (en) * | 2003-09-12 | 2007-07-12 | Hauptmann Jonas R | Method of fabrication and device comprising elongated nanosize elements |
| US8030833B2 (en) * | 2003-09-19 | 2011-10-04 | The Board Of Trustees Of The University Of Illinois | Electron emission device incorporating free standing monocrystalline nanowires |
| US7344753B2 (en) * | 2003-09-19 | 2008-03-18 | The Board Of Trustees Of The University Of Illinois | Nanostructures including a metal |
| US7067328B2 (en) | 2003-09-25 | 2006-06-27 | Nanosys, Inc. | Methods, devices and compositions for depositing and orienting nanostructures |
| DE10345157B4 (de) * | 2003-09-29 | 2009-01-08 | Qimonda Ag | Wärmeleitende Verpackung von elektronischen Schaltungseinheiten |
| US7459839B2 (en) * | 2003-12-05 | 2008-12-02 | Zhidan Li Tolt | Low voltage electron source with self aligned gate apertures, and luminous display using the electron source |
| KR20050055456A (ko) * | 2003-12-08 | 2005-06-13 | 학교법인 포항공과대학교 | 산화아연계 나노막대를 이용한 바이오센서 및 이의 제조방법 |
| US7238594B2 (en) * | 2003-12-11 | 2007-07-03 | The Penn State Research Foundation | Controlled nanowire growth in permanent, integrated nano-templates and methods of fabricating sensor and transducer structures |
| US7421173B2 (en) * | 2003-12-16 | 2008-09-02 | President And Fellows Of Harvard College | Subwavelength-diameter silica wires for low-loss optical waveguiding |
| WO2005062785A2 (en) * | 2003-12-17 | 2005-07-14 | The University Of North Carolina At Chapel Hill | Solution-phase synthesis of metal oxide nanostructures |
| US7112525B1 (en) * | 2003-12-22 | 2006-09-26 | University Of South Florida | Method for the assembly of nanowire interconnects |
| TW200527668A (en) * | 2003-12-23 | 2005-08-16 | Koninkl Philips Electronics Nv | Method of manufacturing and semiconductor device comprising a pn-heterojunction |
| US7018549B2 (en) * | 2003-12-29 | 2006-03-28 | Intel Corporation | Method of fabricating multiple nanowires of uniform length from a single catalytic nanoparticle |
| US7180174B2 (en) * | 2003-12-30 | 2007-02-20 | Intel Corporation | Nanotube modified solder thermal intermediate structure, systems, and methods |
| US7456052B2 (en) * | 2003-12-30 | 2008-11-25 | Intel Corporation | Thermal intermediate apparatus, systems, and methods |
| WO2005110057A2 (en) * | 2004-01-06 | 2005-11-24 | The Regents Of The University Of California | Crystallographic alignment of high-density nanowire arrays |
| WO2005067547A2 (en) * | 2004-01-14 | 2005-07-28 | The Regents Of The University Of California | Diluted magnetic semiconductor nanowires exhibiting magnetoresistance |
| US20110039690A1 (en) | 2004-02-02 | 2011-02-17 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
| US7553371B2 (en) | 2004-02-02 | 2009-06-30 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
| US8025960B2 (en) * | 2004-02-02 | 2011-09-27 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
| DE102004005363A1 (de) * | 2004-02-03 | 2005-09-08 | Forschungszentrum Jülich GmbH | Halbleiter-Struktur |
| US20050167646A1 (en) * | 2004-02-04 | 2005-08-04 | Yissum Research Development Company Of The Hebrew University Of Jerusalem | Nanosubstrate with conductive zone and method for its selective preparation |
| US7354850B2 (en) | 2004-02-06 | 2008-04-08 | Qunano Ab | Directionally controlled growth of nanowhiskers |
| KR100644166B1 (ko) * | 2004-02-12 | 2006-11-10 | 학교법인 포항공과대학교 | 질화물 반도체의 이종접합 구조체, 이를 포함하는나노소자 또는 이의 어레이 |
| US7132677B2 (en) * | 2004-02-13 | 2006-11-07 | Dongguk University | Super bright light emitting diode of nanorod array structure having InGaN quantum well and method for manufacturing the same |
| US20090227107A9 (en) * | 2004-02-13 | 2009-09-10 | President And Fellows Of Havard College | Nanostructures Containing Metal Semiconductor Compounds |
| KR100694426B1 (ko) * | 2004-02-16 | 2007-03-12 | 주식회사 하이닉스반도체 | 나노 튜브 셀 및 이를 이용한 메모리 장치 |
| KR100709462B1 (ko) * | 2004-02-16 | 2007-04-18 | 주식회사 하이닉스반도체 | 다층 나노 튜브 셀을 이용한 메모리 장치 |
| KR100709463B1 (ko) * | 2004-02-16 | 2007-04-18 | 주식회사 하이닉스반도체 | 나노 튜브 셀을 이용한 메모리 장치 |
| US20050248003A1 (en) * | 2004-02-17 | 2005-11-10 | Leonid Tsybeskov | One dimensional nanostructures for vertical heterointegration on a silicon platform and method for making same |
| US7138697B2 (en) * | 2004-02-24 | 2006-11-21 | International Business Machines Corporation | Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector |
| KR100584188B1 (ko) * | 2004-03-08 | 2006-05-29 | 한국과학기술연구원 | 나노선 광센서 및 이를 포함하는 키트 |
| JP2007528294A (ja) * | 2004-03-11 | 2007-10-11 | ポステック ファウンデーション | 酸化物系ナノ素材を含む光触媒 |
| EP1738378A4 (en) | 2004-03-18 | 2010-05-05 | Nanosys Inc | NANOFIBRE SURFACE BASED CAPACITORS |
| US7115971B2 (en) | 2004-03-23 | 2006-10-03 | Nanosys, Inc. | Nanowire varactor diode and methods of making same |
| US7407738B2 (en) * | 2004-04-02 | 2008-08-05 | Pavel Kornilovich | Fabrication and use of superlattice |
| KR100552707B1 (ko) * | 2004-04-07 | 2006-02-20 | 삼성전자주식회사 | 나노와이어 발광소자 및 그 제조방법 |
| KR100601949B1 (ko) * | 2004-04-07 | 2006-07-14 | 삼성전자주식회사 | 나노와이어 발광소자 |
| KR100624419B1 (ko) | 2004-04-07 | 2006-09-19 | 삼성전자주식회사 | 나노와이어 발광소자 및 그 제조방법 |
| US7235129B2 (en) * | 2004-04-13 | 2007-06-26 | Industrial Technology Research Institute | Substrate having a zinc oxide nanowire array normal to its surface and fabrication method thereof |
| US7773404B2 (en) | 2005-01-07 | 2010-08-10 | Invisage Technologies, Inc. | Quantum dot optical devices with enhanced gain and sensitivity and methods of making same |
| US7785922B2 (en) | 2004-04-30 | 2010-08-31 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
| JP2007535413A (ja) | 2004-04-30 | 2007-12-06 | ナノシス・インコーポレイテッド | ナノワイヤ成長および採取のための系および方法 |
| US20050279274A1 (en) * | 2004-04-30 | 2005-12-22 | Chunming Niu | Systems and methods for nanowire growth and manufacturing |
| CN1268543C (zh) * | 2004-05-11 | 2006-08-09 | 湖南大学 | 水热法制备自组生长的硅纳米管及硅纳米线的方法 |
| US20090263912A1 (en) * | 2004-05-13 | 2009-10-22 | The Regents Of The University Of California | Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices |
| US8280214B2 (en) * | 2004-05-13 | 2012-10-02 | The Regents Of The University Of California | Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices |
| CA2565765A1 (en) * | 2004-05-13 | 2005-12-01 | The Regents Of The University Of California | Nanowires and nanoribbons as subwavelength optical waveguides and their use as components in photonic circuits and devices |
| JP2005326261A (ja) * | 2004-05-14 | 2005-11-24 | Japan Synchrotron Radiation Research Inst | 超微細構造体のx線迅速構造解析方法 |
| US20050257821A1 (en) * | 2004-05-19 | 2005-11-24 | Shriram Ramanathan | Thermoelectric nano-wire devices |
| US7816655B1 (en) * | 2004-05-21 | 2010-10-19 | Kla-Tencor Technologies Corporation | Reflective electron patterning device and method of using same |
| US7956360B2 (en) * | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
| GB0413310D0 (en) * | 2004-06-15 | 2004-07-14 | Koninkl Philips Electronics Nv | Nanowire semiconductor device |
| US20070264623A1 (en) * | 2004-06-15 | 2007-11-15 | President And Fellows Of Harvard College | Nanosensors |
| US7771820B2 (en) * | 2004-06-17 | 2010-08-10 | Japan Science And Technology Agency | Monocrystal, nano wire material, electronic element, and method of producing nano wire material |
| EP1779417A2 (en) * | 2004-06-21 | 2007-05-02 | 3M Innovative Properties Company | Patterning and aligning semiconducting nanoparticles |
| US20050282307A1 (en) * | 2004-06-21 | 2005-12-22 | Daniels John J | Particulate for organic and inorganic light active devices and methods for fabricating the same |
| WO2006000790A1 (en) * | 2004-06-25 | 2006-01-05 | Btg International Limited | Formation of nanowhiskers on a substrate of dissimilar material |
| CN101010793B (zh) * | 2004-06-30 | 2011-09-28 | Nxp股份有限公司 | 制造具有通过纳米线接触的导电材料层的电子器件的方法 |
| US7534633B2 (en) | 2004-07-02 | 2009-05-19 | Cree, Inc. | LED with substrate modifications for enhanced light extraction and method of making same |
| WO2006078281A2 (en) * | 2004-07-07 | 2006-07-27 | Nanosys, Inc. | Systems and methods for harvesting and integrating nanowires |
| GB0415891D0 (en) * | 2004-07-16 | 2004-08-18 | Koninkl Philips Electronics Nv | Nanoscale fet |
| WO2006085993A2 (en) * | 2004-07-16 | 2006-08-17 | The Trustees Of Boston College | Device and method for achieving enhanced field emission utilizing nanostructures grown on a conductive substrate |
| US7518283B2 (en) | 2004-07-19 | 2009-04-14 | Cjp Ip Holdings Ltd. | Nanometer-scale electrostatic and electromagnetic motors and generators |
| CN100505298C (zh) * | 2004-07-20 | 2009-06-24 | Nxp股份有限公司 | 半导体器件及制造该半导体器件的方法 |
| FR2873492B1 (fr) * | 2004-07-21 | 2006-11-24 | Commissariat Energie Atomique | Nanocomposite photoactif et son procede de fabrication |
| WO2006015105A2 (en) * | 2004-07-28 | 2006-02-09 | President And Fellows Of Harvard College | Nanowire photonic circuits, components thereof, and related methods |
| US8309843B2 (en) * | 2004-08-19 | 2012-11-13 | Banpil Photonics, Inc. | Photovoltaic cells based on nanoscale structures |
| US7713849B2 (en) * | 2004-08-20 | 2010-05-11 | Illuminex Corporation | Metallic nanowire arrays and methods for making and using same |
| TWI500072B (zh) * | 2004-08-31 | 2015-09-11 | Sophia School Corp | 發光元件之製造方法 |
| US7262066B2 (en) * | 2004-09-03 | 2007-08-28 | Picocal, Inc. | Systems and methods for thin film thermal diagnostics with scanning thermal microstructures |
| US7438887B2 (en) * | 2004-09-03 | 2008-10-21 | The University Of Connecticut | Manganese oxide nanowires, films, and membranes and methods of making |
| KR100647288B1 (ko) * | 2004-09-13 | 2006-11-23 | 삼성전자주식회사 | 나노와이어 발광소자 및 그 제조방법 |
| US8558311B2 (en) | 2004-09-16 | 2013-10-15 | Nanosys, Inc. | Dielectrics using substantially longitudinally oriented insulated conductive wires |
| US7365395B2 (en) | 2004-09-16 | 2008-04-29 | Nanosys, Inc. | Artificial dielectrics using nanostructures |
| US7158219B2 (en) * | 2004-09-16 | 2007-01-02 | Hewlett-Packard Development Company, L.P. | SERS-active structures including nanowires |
| JP2008515654A (ja) * | 2004-10-12 | 2008-05-15 | ナノシス・インク. | 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス |
| US20070240757A1 (en) * | 2004-10-15 | 2007-10-18 | The Trustees Of Boston College | Solar cells using arrays of optical rectennas |
| US7473943B2 (en) * | 2004-10-15 | 2009-01-06 | Nanosys, Inc. | Gate configuration for nanowire electronic devices |
| US7400665B2 (en) * | 2004-11-05 | 2008-07-15 | Hewlett-Packard Developement Company, L.P. | Nano-VCSEL device and fabrication thereof using nano-colonnades |
| US8029186B2 (en) * | 2004-11-05 | 2011-10-04 | International Business Machines Corporation | Method for thermal characterization under non-uniform heat load |
| US20060112983A1 (en) * | 2004-11-17 | 2006-06-01 | Nanosys, Inc. | Photoactive devices and components with enhanced efficiency |
| WO2006057818A2 (en) * | 2004-11-24 | 2006-06-01 | Nanosys, Inc. | Contact doping and annealing systems and processes for nanowire thin films |
| JP4923477B2 (ja) * | 2004-11-24 | 2012-04-25 | 株式会社豊田中央研究所 | 量子ドットアレイ及びその製造方法、並びに量子ドットアレイ素子及びその製造方法 |
| US7514725B2 (en) * | 2004-11-30 | 2009-04-07 | Spire Corporation | Nanophotovoltaic devices |
| US7560366B1 (en) | 2004-12-02 | 2009-07-14 | Nanosys, Inc. | Nanowire horizontal growth and substrate removal |
| JP2008523590A (ja) * | 2004-12-06 | 2008-07-03 | プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ | ナノスケールワイヤベースのデータ格納装置 |
| US7309830B2 (en) | 2005-05-03 | 2007-12-18 | Toyota Motor Engineering & Manufacturing North America, Inc. | Nanostructured bulk thermoelectric material |
| US7842432B2 (en) | 2004-12-09 | 2010-11-30 | Nanosys, Inc. | Nanowire structures comprising carbon |
| US8278011B2 (en) | 2004-12-09 | 2012-10-02 | Nanosys, Inc. | Nanostructured catalyst supports |
| US7939218B2 (en) | 2004-12-09 | 2011-05-10 | Nanosys, Inc. | Nanowire structures comprising carbon |
| CN102593466A (zh) * | 2004-12-09 | 2012-07-18 | 奈米系统股份有限公司 | 用于燃料电池的基于纳米线的膜电极组件 |
| US20060157684A1 (en) * | 2004-12-15 | 2006-07-20 | The Regents Of The University Of California | Thin film multilayer with nanolayers addressable from the macroscale |
| US8120014B2 (en) * | 2004-12-15 | 2012-02-21 | Drexel University | Nanowire based plasmonics |
| JP4528938B2 (ja) * | 2004-12-24 | 2010-08-25 | 独立行政法人物質・材料研究機構 | マンガンがドープされた窒化ガリウムナノワイヤーの製造方法 |
| KR100653083B1 (ko) * | 2004-12-27 | 2006-12-01 | 삼성전자주식회사 | Rf 스위치 |
| WO2006070670A1 (ja) | 2004-12-28 | 2006-07-06 | Matsushita Electric Industrial Co., Ltd. | 半導体ナノワイヤ、および当該ナノワイヤを備えた半導体装置 |
| CA2519608A1 (en) * | 2005-01-07 | 2006-07-07 | Edward Sargent | Quantum dot-polymer nanocomposite photodetectors and photovoltaics |
| EP1851166A2 (en) * | 2005-01-12 | 2007-11-07 | New York University | System and method for processing nanowires with holographic optical tweezers |
| JP4904696B2 (ja) * | 2005-02-16 | 2012-03-28 | 日本電気株式会社 | 電界効果トランジスタおよびその製造方法 |
| KR100661696B1 (ko) * | 2005-02-22 | 2006-12-26 | 삼성전자주식회사 | 이종 구조의 반도체 나노 와이어 및 그의 제조방법 |
| KR100723418B1 (ko) * | 2005-02-25 | 2007-05-30 | 삼성전자주식회사 | 실리콘 나노 와이어, 실리콘 나노 와이어를 포함하는반도체 소자 및 실리콘 나노 와이어 제조 방법 |
| JP2006239857A (ja) * | 2005-02-25 | 2006-09-14 | Samsung Electronics Co Ltd | シリコンナノワイヤ、シリコンナノワイヤを含む半導体素子及びシリコンナノワイヤの製造方法 |
| US7375012B2 (en) * | 2005-02-28 | 2008-05-20 | Pavel Kornilovich | Method of forming multilayer film |
| US20060197436A1 (en) * | 2005-03-01 | 2006-09-07 | Sharp Laboratories Of America, Inc. | ZnO nanotip electrode electroluminescence device on silicon substrate |
| US20060207647A1 (en) * | 2005-03-16 | 2006-09-21 | General Electric Company | High efficiency inorganic nanorod-enhanced photovoltaic devices |
| US7862793B2 (en) * | 2005-04-08 | 2011-01-04 | The Regents Of The University Of California | Growth of and defect reduction in nanoscale materials |
| WO2006113207A2 (en) * | 2005-04-13 | 2006-10-26 | Nanosys, Inc. | Nanowire dispersion compositions and uses thereof |
| US8262998B2 (en) * | 2005-04-15 | 2012-09-11 | Branislav Vlahovic | Detection methods and detection devices based on the quantum confinement effects |
| CN1854733A (zh) * | 2005-04-21 | 2006-11-01 | 清华大学 | 测量碳纳米管生长速度的方法 |
| CN1850580A (zh) * | 2005-04-22 | 2006-10-25 | 清华大学 | 超晶格纳米器件及其制作方法 |
| WO2006116424A2 (en) * | 2005-04-26 | 2006-11-02 | Nanosys, Inc. | Paintable nanofiber coatings |
| US7449776B2 (en) * | 2005-05-10 | 2008-11-11 | Hewlett-Packard Development Company, L.P. | Cooling devices that use nanowires |
| US7388201B2 (en) | 2005-05-13 | 2008-06-17 | National University Of Singapore | Radiation detector having coated nanostructure and method |
| US9153645B2 (en) | 2005-05-17 | 2015-10-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US8324660B2 (en) | 2005-05-17 | 2012-12-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication |
| US20100227382A1 (en) | 2005-05-25 | 2010-09-09 | President And Fellows Of Harvard College | Nanoscale sensors |
| US8039726B2 (en) * | 2005-05-26 | 2011-10-18 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
| FR2886284B1 (fr) * | 2005-05-30 | 2007-06-29 | Commissariat Energie Atomique | Procede de realisation de nanostructures |
| AU2006252815A1 (en) * | 2005-06-02 | 2006-12-07 | Nanosys, Inc. | Light emitting nanowires for macroelectronics |
| WO2006132659A2 (en) * | 2005-06-06 | 2006-12-14 | President And Fellows Of Harvard College | Nanowire heterostructures |
| US7783140B2 (en) * | 2005-06-09 | 2010-08-24 | Hewlett-Packard Development Company, L.P. | Optically coupled integrated circuit layers |
| US7492803B2 (en) * | 2005-06-10 | 2009-02-17 | Hewlett-Packard Development Company, L.P. | Fiber-coupled single photon source |
| CN100417117C (zh) * | 2005-06-15 | 2008-09-03 | 华为技术有限公司 | 自动交换光网络中节点可达性的识别方法 |
| JP5255437B2 (ja) * | 2005-06-16 | 2013-08-07 | クナノ アーベー | 半導体ナノワイヤトランジスタ |
| WO2006138671A2 (en) * | 2005-06-17 | 2006-12-28 | Illuminex Corporation | Photovoltaic wire |
| US20090050204A1 (en) * | 2007-08-03 | 2009-02-26 | Illuminex Corporation. | Photovoltaic device using nanostructured material |
| US20100193768A1 (en) * | 2005-06-20 | 2010-08-05 | Illuminex Corporation | Semiconducting nanowire arrays for photovoltaic applications |
| WO2007001098A1 (en) * | 2005-06-25 | 2007-01-04 | Seoul Opto Device Co., Ltd. | Nanostructure having a nitride-based quantum well and light emitting diode employing the same |
| JP2008544567A (ja) * | 2005-06-27 | 2008-12-04 | ソウル オプト デバイス カンパニー リミテッド | 窒化物多重量子ウェルを有するナノロッドアレイ構造の発光ダイオード、その製造方法、及びナノロッド |
| WO2007032802A2 (en) * | 2005-06-29 | 2007-03-22 | University Of Houston | Nanorod arrays formed by ion beam implantation |
| US7276424B2 (en) * | 2005-06-29 | 2007-10-02 | Hewlett-Packard Development Company, L.P. | Fabrication of aligned nanowire lattices |
| JP4894180B2 (ja) * | 2005-07-11 | 2012-03-14 | 独立行政法人物質・材料研究機構 | シリカ膜で被覆されたGaとZnSとの接合を有するナノワイヤー及びその製造方法 |
| US20070048160A1 (en) * | 2005-07-19 | 2007-03-01 | Pinkerton Joseph F | Heat activated nanometer-scale pump |
| EP1748494B1 (en) * | 2005-07-29 | 2008-04-09 | Interuniversitair Microelektronica Centrum | Wavelength-sensitive detector with elongate nanostructures |
| JP2007043150A (ja) * | 2005-07-29 | 2007-02-15 | Interuniv Micro Electronica Centrum Vzw | 細長いナノ構造体を有する波長センシティブ検出器 |
| KR20080036627A (ko) * | 2005-08-03 | 2008-04-28 | 나노-프로프리어터리, 인크. | 연속 범위의 수소 센서 |
| EP1965438A3 (en) | 2005-08-12 | 2009-05-13 | Cambrios Technologies Corporation | Nanowires-based transparent conductors |
| KR20070021671A (ko) * | 2005-08-19 | 2007-02-23 | 서울옵토디바이스주식회사 | 나노막대들의 어레이를 채택한 발광 다이오드 및 그것을제조하는 방법 |
| EP1938391A4 (en) | 2005-08-22 | 2016-06-29 | Q1 Nanosystems Inc | NANOSTRUCTURE AND THIS IMPLEMENTING PHOTOVOLTAGE CELL |
| US7754964B2 (en) * | 2005-08-24 | 2010-07-13 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanocoax structures |
| WO2007025013A2 (en) * | 2005-08-24 | 2007-03-01 | The Trustees Of Boston College | Nanoscale optical microscope |
| US7943847B2 (en) * | 2005-08-24 | 2011-05-17 | The Trustees Of Boston College | Apparatus and methods for solar energy conversion using nanoscale cometal structures |
| US7649665B2 (en) * | 2005-08-24 | 2010-01-19 | The Trustees Of Boston College | Apparatus and methods for optical switching using nanoscale optics |
| US7589880B2 (en) * | 2005-08-24 | 2009-09-15 | The Trustees Of Boston College | Apparatus and methods for manipulating light using nanoscale cometal structures |
| US7915973B2 (en) * | 2005-08-25 | 2011-03-29 | The Regents Of The University Of California | Tunable multiwalled nanotube resonator |
| US8592136B2 (en) * | 2005-09-13 | 2013-11-26 | Affymetrix, Inc. | Methods for producing codes for microparticles |
| WO2007038164A2 (en) * | 2005-09-23 | 2007-04-05 | Nanosys, Inc. | Methods for nanostructure doping |
| US7426025B2 (en) * | 2005-09-23 | 2008-09-16 | Hewlett-Packard Development Company, L.P. | Nanostructures, systems, and methods including nanolasers for enhanced Raman spectroscopy |
| JP4919146B2 (ja) * | 2005-09-27 | 2012-04-18 | 独立行政法人産業技術総合研究所 | スイッチング素子 |
| PL1946163T3 (pl) * | 2005-10-12 | 2016-10-31 | Włókno zawierające nanodrut i jego wytwarzanie | |
| US20070084495A1 (en) * | 2005-10-14 | 2007-04-19 | Biprodas Dutta | Method for producing practical thermoelectric devices using quantum confinement in nanostructures |
| US20070084499A1 (en) * | 2005-10-14 | 2007-04-19 | Biprodas Dutta | Thermoelectric device produced by quantum confinement in nanostructures |
| JP2007111816A (ja) * | 2005-10-19 | 2007-05-10 | National Institute For Materials Science | 多機能ナノワイヤとその製造方法、多機能ナノワイヤを用いた濃縮方法 |
| US7528060B1 (en) | 2005-10-27 | 2009-05-05 | University Of Puerto Rico | Branched nanostructures and method of synthesizing the same |
| US8314327B2 (en) * | 2005-11-06 | 2012-11-20 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
| KR100741243B1 (ko) * | 2005-11-07 | 2007-07-19 | 삼성전자주식회사 | 금속 나노닷들을 포함하는 나노 와이어 및 그의 제조방법 |
| US20090045720A1 (en) * | 2005-11-10 | 2009-02-19 | Eun Kyung Lee | Method for producing nanowires using porous glass template, and multi-probe, field emission tip and devices employing the nanowires |
| KR101224785B1 (ko) * | 2005-11-10 | 2013-01-21 | 삼성전자주식회사 | 다공성 글래스 템플릿을 이용한 나노와이어의 제조방법 및이를 이용한 멀티프로브의 제조방법 |
| EP1952444B1 (en) * | 2005-11-18 | 2011-07-27 | Nxp B.V. | Metal-base nanowire transistor |
| US7923844B2 (en) * | 2005-11-22 | 2011-04-12 | Shocking Technologies, Inc. | Semiconductor devices including voltage switchable materials for over-voltage protection |
| US20100263200A1 (en) * | 2005-11-22 | 2010-10-21 | Lex Kosowsky | Wireless communication device using voltage switchable dielectric material |
| EP1791186A1 (en) | 2005-11-25 | 2007-05-30 | Stormled AB | Light emitting diode and method for manufacturing the same |
| US8816191B2 (en) * | 2005-11-29 | 2014-08-26 | Banpil Photonics, Inc. | High efficiency photovoltaic cells and manufacturing thereof |
| US10873045B2 (en) * | 2005-11-29 | 2020-12-22 | Banpil Photonics, Inc. | High efficiency photovoltaic cells and manufacturing thereof |
| US20070122313A1 (en) * | 2005-11-30 | 2007-05-31 | Zhiyong Li | Nanochannel apparatus and method of fabricating |
| US7906803B2 (en) * | 2005-12-06 | 2011-03-15 | Canon Kabushiki Kaisha | Nano-wire capacitor and circuit device therewith |
| US7439560B2 (en) * | 2005-12-06 | 2008-10-21 | Canon Kabushiki Kaisha | Semiconductor device using semiconductor nanowire and display apparatus and image pick-up apparatus using the same |
| US20070131269A1 (en) * | 2005-12-09 | 2007-06-14 | Biprodas Dutta | High density nanowire arrays in glassy matrix |
| US7559215B2 (en) * | 2005-12-09 | 2009-07-14 | Zt3 Technologies, Inc. | Methods of drawing high density nanowire arrays in a glassy matrix |
| US8658880B2 (en) | 2005-12-09 | 2014-02-25 | Zt3 Technologies, Inc. | Methods of drawing wire arrays |
| US7767564B2 (en) * | 2005-12-09 | 2010-08-03 | Zt3 Technologies, Inc. | Nanowire electronic devices and method for producing the same |
| US20070130841A1 (en) * | 2005-12-12 | 2007-06-14 | Bays Richard V | Construction module system and method |
| KR20070061994A (ko) * | 2005-12-12 | 2007-06-15 | 삼성전자주식회사 | 표시 장치 및 그 제조 방법 |
| US8330154B2 (en) * | 2005-12-20 | 2012-12-11 | Georgia Tech Research Corporation | Piezoelectric and semiconducting coupled nanogenerators |
| KR20070067308A (ko) * | 2005-12-23 | 2007-06-28 | 삼성전자주식회사 | 유기 발광 다이오드 및 그 제조 방법, 상기 유기 발광다이오드를 포함하는 유기 발광 표시 장치 |
| EP1804350A1 (en) * | 2005-12-27 | 2007-07-04 | Interuniversitair Microelektronica Centrum | A semiconductor laser comprising elongate nanostructures |
| CA2624778A1 (en) * | 2005-12-29 | 2007-11-22 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
| US7741197B1 (en) | 2005-12-29 | 2010-06-22 | Nanosys, Inc. | Systems and methods for harvesting and reducing contamination in nanowires |
| WO2007079411A2 (en) * | 2005-12-30 | 2007-07-12 | The Regents Of The University Of California | Alignment, transportation and integration of nanowires using optical trapping |
| US20070155025A1 (en) * | 2006-01-04 | 2007-07-05 | Anping Zhang | Nanowire structures and devices for use in large-area electronics and methods of making the same |
| US7349613B2 (en) * | 2006-01-24 | 2008-03-25 | Hewlett-Packard Development Company, L.P. | Photonic crystal devices including gain material and methods for using the same |
| US7570355B2 (en) * | 2006-01-27 | 2009-08-04 | Hewlett-Packard Development Company, L.P. | Nanowire heterostructures and methods of forming the same |
| US8791359B2 (en) * | 2006-01-28 | 2014-07-29 | Banpil Photonics, Inc. | High efficiency photovoltaic cells |
| FR2897204B1 (fr) * | 2006-02-07 | 2008-05-30 | Ecole Polytechnique Etablissem | Structure de transistor vertical et procede de fabrication |
| US7357018B2 (en) * | 2006-02-10 | 2008-04-15 | Agilent Technologies, Inc. | Method for performing a measurement inside a specimen using an insertable nanoscale FET probe |
| US7826336B2 (en) | 2006-02-23 | 2010-11-02 | Qunano Ab | Data storage nanostructures |
| JP5483887B2 (ja) * | 2006-03-08 | 2014-05-07 | クナノ アーベー | Si上のエピタキシャルな半導体ナノワイヤの金属無しでの合成方法 |
| US7968359B2 (en) * | 2006-03-10 | 2011-06-28 | Stc.Unm | Thin-walled structures |
| CA2643439C (en) * | 2006-03-10 | 2015-09-08 | Stc.Unm | Pulsed growth of gan nanowires and applications in group iii nitride semiconductor substrate materials and devices |
| US8404313B1 (en) | 2006-03-22 | 2013-03-26 | University Of South Florida | Synthesis of nanocrystalline diamond fibers |
| US20080112663A1 (en) * | 2006-03-22 | 2008-05-15 | Searete Llc, A Limited Liability Corporation Of The State Of Delaware | Layered electromagnetically responsive assembly |
| US8642123B1 (en) | 2006-03-22 | 2014-02-04 | University Of South Florida | Integration of ZnO nanowires with nanocrystalline diamond fibers |
| KR101198763B1 (ko) * | 2006-03-23 | 2012-11-12 | 엘지이노텍 주식회사 | 기둥 구조와 이를 이용한 발광 소자 및 그 형성방법 |
| WO2007112066A2 (en) * | 2006-03-24 | 2007-10-04 | Amberwave Systems Corporation | Lattice-mismatched semiconductor structures and related methods for device fabrication |
| US7498215B2 (en) * | 2006-04-03 | 2009-03-03 | Canon Kabushiki Kaisha | Method of producing product including silicon wires |
| US8512641B2 (en) * | 2006-04-11 | 2013-08-20 | Applied Nanotech Holdings, Inc. | Modulation of step function phenomena by varying nanoparticle size |
| US7924413B2 (en) * | 2006-04-28 | 2011-04-12 | Hewlett-Packard Development Company, L.P. | Nanowire-based photonic devices |
| US7465954B2 (en) * | 2006-04-28 | 2008-12-16 | Hewlett-Packard Development Company, L.P. | Nanowire devices and systems, light-emitting nanowires, and methods of precisely positioning nanoparticles |
| US20070261730A1 (en) * | 2006-05-12 | 2007-11-15 | General Electric Company | Low dimensional thermoelectrics fabricated by semiconductor wafer etching |
| US7544546B2 (en) * | 2006-05-15 | 2009-06-09 | International Business Machines Corporation | Formation of carbon and semiconductor nanomaterials using molecular assemblies |
| US7655272B1 (en) * | 2006-05-19 | 2010-02-02 | The Board Of Trustees Of The Leland Stanford Junior University | Nanoparticles with controlled growth |
| US20070277866A1 (en) * | 2006-05-31 | 2007-12-06 | General Electric Company | Thermoelectric nanotube arrays |
| CN1872660B (zh) * | 2006-06-01 | 2010-06-23 | 中山大学 | 多层结构纳米线阵列及其制备方法 |
| JP2007319988A (ja) * | 2006-06-01 | 2007-12-13 | National Institute For Materials Science | Iv族半導体ナノ細線の製造方法並びに構造制御方法 |
| US7626190B2 (en) * | 2006-06-02 | 2009-12-01 | Infineon Technologies Ag | Memory device, in particular phase change random access memory device with transistor, and method for fabricating a memory device |
| US20080008844A1 (en) * | 2006-06-05 | 2008-01-10 | Martin Bettge | Method for growing arrays of aligned nanostructures on surfaces |
| WO2008097321A2 (en) * | 2006-06-05 | 2008-08-14 | The Board Of Trustees Of The University Of Illinois | Method for growing arrays of aligned nanostructures on surfaces |
| WO2008057629A2 (en) * | 2006-06-05 | 2008-05-15 | The Board Of Trustees Of The University Of Illinois | Photovoltaic and photosensing devices based on arrays of aligned nanostructures |
| FR2902237B1 (fr) | 2006-06-09 | 2008-10-10 | Commissariat Energie Atomique | Procede de realisation d'un dispositif microelectronique emetteur de lumiere a nanofils semi-conducteurs formes sur un substrat metallique |
| AU2007309660A1 (en) * | 2006-06-12 | 2008-05-02 | President And Fellows Of Harvard College | Nanosensors and related technologies |
| US8039834B2 (en) * | 2006-06-13 | 2011-10-18 | Georgia Tech Research Corporation | Nanogenerator comprising piezoelectric semiconducting nanostructures and Schottky conductive contacts |
| KR100723882B1 (ko) * | 2006-06-15 | 2007-05-31 | 한국전자통신연구원 | 실리콘 나노점 박막을 이용한 실리콘 나노와이어 제조 방법 |
| US7804157B2 (en) * | 2006-06-16 | 2010-09-28 | Hewlett-Packard Development Company, L.P. | Device configured to have a nanowire formed laterally between two electrodes and methods for forming the same |
| US7718995B2 (en) | 2006-06-20 | 2010-05-18 | Panasonic Corporation | Nanowire, method for fabricating the same, and device having nanowires |
| JP5312938B2 (ja) * | 2006-06-21 | 2013-10-09 | パナソニック株式会社 | 電界効果トランジスタ |
| US20080280085A1 (en) * | 2006-06-25 | 2008-11-13 | Oren Livne | Dynamically Tunable Fibrillar Structures |
| US20080006524A1 (en) * | 2006-07-05 | 2008-01-10 | Imra America, Inc. | Method for producing and depositing nanoparticles |
| KR20080006735A (ko) * | 2006-07-13 | 2008-01-17 | 삼성전자주식회사 | 촉매 담지 탄소나노튜브를 이용한 태양전지 및 그 제조방법 |
| KR100779090B1 (ko) * | 2006-07-18 | 2007-11-27 | 한국전자통신연구원 | 아연 산화물을 이용하는 가스 감지기 및 그 제조 방법 |
| FR2904145B1 (fr) * | 2006-07-20 | 2008-10-17 | Commissariat Energie Atomique | Composant electronique a transfert de chaleur par ebullition et condensation et procede de fabrication |
| FR2904146B1 (fr) * | 2006-07-20 | 2008-10-17 | Commissariat Energie Atomique | Procede de fabrication d'une nanostructure a base de nanofils interconnectes,nanostructure et utilisation comme convertisseur thermoelectrique |
| KR100785347B1 (ko) * | 2006-07-27 | 2007-12-18 | 한국과학기술연구원 | 금속전극 위에서의 반도체 나노선의 정렬방법 |
| US8044556B2 (en) * | 2006-07-28 | 2011-10-25 | California Institute Of Technology | Highly efficient, charge depletion-mediated, voltage-tunable actuation efficiency and resonance frequency of piezoelectric semiconductor nanoelectromechanical systems resonators |
| US20080032049A1 (en) * | 2006-07-29 | 2008-02-07 | Lex Kosowsky | Voltage switchable dielectric material having high aspect ratio particles |
| US20080029405A1 (en) * | 2006-07-29 | 2008-02-07 | Lex Kosowsky | Voltage switchable dielectric material having conductive or semi-conductive organic material |
| US7981325B2 (en) * | 2006-07-29 | 2011-07-19 | Shocking Technologies, Inc. | Electronic device for voltage switchable dielectric material having high aspect ratio particles |
| US7974096B2 (en) * | 2006-08-17 | 2011-07-05 | Ati Technologies Ulc | Three-dimensional thermal spreading in an air-cooled thermal device |
| EP2062290B1 (en) | 2006-09-07 | 2019-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Defect reduction using aspect ratio trapping |
| WO2008033303A2 (en) | 2006-09-11 | 2008-03-20 | President And Fellows Of Harvard College | Branched nanoscale wires |
| EP1901355B1 (en) * | 2006-09-15 | 2015-11-11 | Imec | Tunnel effect transistors based on monocrystalline nanowires having a heterostructure |
| EP1900681B1 (en) * | 2006-09-15 | 2017-03-15 | Imec | Tunnel Field-Effect Transistors based on silicon nanowires |
| EP2084748A4 (en) * | 2006-09-24 | 2011-09-28 | Shocking Technologies Inc | VOLTAGE GRADUATED RESPONSE VOLTAGE-SWITCHABLE DIELECTRIC MATERIAL, AND METHOD FOR MANUFACTURING THE SAME |
| US20080072961A1 (en) * | 2006-09-26 | 2008-03-27 | Yong Liang | Nanosized,dye-sensitized photovoltaic cell |
| US7686886B2 (en) * | 2006-09-26 | 2010-03-30 | International Business Machines Corporation | Controlled shape semiconductor layer by selective epitaxy under seed structure |
| KR100808202B1 (ko) * | 2006-09-26 | 2008-02-29 | 엘지전자 주식회사 | 공명 터널링 다이오드 및 그 제조방법 |
| US7875958B2 (en) | 2006-09-27 | 2011-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures |
| US7405420B1 (en) * | 2006-09-29 | 2008-07-29 | The Board Of Trustees Of The Leland Stanford Junior University | Method and system for chalcogenide-based nanowire memory |
| US7442575B2 (en) * | 2006-09-29 | 2008-10-28 | Texas Christian University | Method of manufacturing semiconductor nanowires |
| CN101536187A (zh) * | 2006-10-05 | 2009-09-16 | 日立化成工业株式会社 | 有序排列、大长宽比、高密度的硅纳米线及其制造方法 |
| GB2442768A (en) * | 2006-10-11 | 2008-04-16 | Sharp Kk | A method of encapsulating low dimensional structures |
| US8018568B2 (en) | 2006-10-12 | 2011-09-13 | Cambrios Technologies Corporation | Nanowire-based transparent conductors and applications thereof |
| CN102324462B (zh) * | 2006-10-12 | 2015-07-01 | 凯博瑞奥斯技术公司 | 基于纳米线的透明导体及其应用 |
| US7592679B1 (en) * | 2006-10-19 | 2009-09-22 | Hewlett-Packard Development Company, L.P. | Sensor and method for making the same |
| WO2008051503A2 (en) | 2006-10-19 | 2008-05-02 | Amberwave Systems Corporation | Light-emitter-based devices with lattice-mismatched semiconductor structures |
| US20080093693A1 (en) * | 2006-10-20 | 2008-04-24 | Kamins Theodore I | Nanowire sensor with variant selectively interactive segments |
| US8624108B1 (en) * | 2006-11-01 | 2014-01-07 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
| CN101295131B (zh) * | 2006-11-03 | 2011-08-31 | 中国科学院物理研究所 | 一种在绝缘衬底上制备纳米结构的方法 |
| WO2008057558A2 (en) | 2006-11-07 | 2008-05-15 | Nanosys, Inc. | Systems and methods for nanowire growth |
| JP5009993B2 (ja) | 2006-11-09 | 2012-08-29 | ナノシス・インク. | ナノワイヤの配列方法および堆積方法 |
| WO2008060282A1 (en) * | 2006-11-17 | 2008-05-22 | General Electric Company | Thermal transfer and power generation devices and methods of making the same |
| US20120119168A9 (en) * | 2006-11-21 | 2012-05-17 | Robert Fleming | Voltage switchable dielectric materials with low band gap polymer binder or composite |
| EP2095100B1 (en) | 2006-11-22 | 2016-09-21 | President and Fellows of Harvard College | Method of operating a nanowire field effect transistor sensor |
| US7786024B2 (en) * | 2006-11-29 | 2010-08-31 | Nanosys, Inc. | Selective processing of semiconductor nanowires by polarized visible radiation |
| US8409659B2 (en) | 2006-12-01 | 2013-04-02 | GM Global Technology Operations LLC | Nanowire supported catalysts for fuel cell electrodes |
| US20110189101A1 (en) * | 2006-12-01 | 2011-08-04 | National University Corporation Shimane University | Fluorescent labeling agent and fluorescent labeling method |
| JP4167718B2 (ja) | 2006-12-13 | 2008-10-22 | 松下電器産業株式会社 | ナノワイヤ及びナノワイヤを備える装置並びにそれらの製造方法 |
| US8030664B2 (en) | 2006-12-15 | 2011-10-04 | Samsung Led Co., Ltd. | Light emitting device |
| WO2008079077A2 (en) * | 2006-12-22 | 2008-07-03 | Qunano Ab | Nanoelectronic structure and method of producing such |
| EP2091862B1 (en) * | 2006-12-22 | 2019-12-11 | QuNano AB | Elevated led and method of producing such |
| US8049203B2 (en) | 2006-12-22 | 2011-11-01 | Qunano Ab | Nanoelectronic structure and method of producing such |
| US8183587B2 (en) * | 2006-12-22 | 2012-05-22 | Qunano Ab | LED with upstanding nanowire structure and method of producing such |
| JP5453105B2 (ja) * | 2006-12-22 | 2014-03-26 | クナノ アーベー | ナノ構造のled及びデバイス |
| US20100221894A1 (en) * | 2006-12-28 | 2010-09-02 | Industry-Academic Cooperation Foundation, Yonsei University | Method for manufacturing nanowires by using a stress-induced growth |
| US7629532B2 (en) * | 2006-12-29 | 2009-12-08 | Sundiode, Inc. | Solar cell having active region with nanostructures having energy wells |
| US8101449B2 (en) | 2007-01-03 | 2012-01-24 | Toyota Motor Engineering & Manufacturing North America, Inc. | Process for altering thermoelectric properties of a material |
| US20080157354A1 (en) * | 2007-01-03 | 2008-07-03 | Sharp Laboratories Of America, Inc. | Multiple stacked nanostructure arrays and methods for making the same |
| US7781317B2 (en) * | 2007-01-03 | 2010-08-24 | Toyota Motor Engineering & Manufacturing North America, Inc. | Method of non-catalytic formation and growth of nanowires |
| WO2008085886A2 (en) * | 2007-01-04 | 2008-07-17 | Board Of Regents, The Univeristy Of Texas System | Cardiovascular power source for automatic implantable cadioverter defibrillators |
| US20110275947A1 (en) * | 2007-01-04 | 2011-11-10 | Board Of Regents, The University Of Texas System | Cardiovascular power source for automatic implantable cardioverter defibrillators |
| US7948050B2 (en) | 2007-01-11 | 2011-05-24 | International Business Machines Corporation | Core-shell nanowire transistor |
| CN101681813B (zh) * | 2007-01-12 | 2012-07-11 | 昆南诺股份有限公司 | 氮化物纳米线及其制造方法 |
| CN105826345B (zh) | 2007-01-17 | 2018-07-31 | 伊利诺伊大学评议会 | 通过基于印刷的组装制造的光学系统 |
| US7544591B2 (en) * | 2007-01-18 | 2009-06-09 | Hewlett-Packard Development Company, L.P. | Method of creating isolated electrodes in a nanowire-based device |
| JP4825697B2 (ja) * | 2007-01-25 | 2011-11-30 | 株式会社ミツトヨ | デジタル式変位測定器 |
| US7720326B2 (en) * | 2007-01-29 | 2010-05-18 | Hewlett-Packard Development Company, L.P. | Nanowire-based photodetectors |
| US7711213B2 (en) * | 2007-01-29 | 2010-05-04 | Hewlett-Packard Development Company, L.P. | Nanowire-based modulators |
| CN101627479B (zh) * | 2007-01-30 | 2011-06-15 | 索拉斯特公司 | 光电池及其制造方法 |
| US20080187684A1 (en) * | 2007-02-07 | 2008-08-07 | Imra America, Inc. | Method for depositing crystalline titania nanoparticles and films |
| KR20090120474A (ko) * | 2007-02-12 | 2009-11-24 | 솔라스타, 인코포레이티드 | 고온 캐리어 냉각이 감소된 광전지 셀 |
| US7851784B2 (en) * | 2007-02-13 | 2010-12-14 | Nano-Electronic And Photonic Devices And Circuits, Llc | Nanotube array electronic devices |
| US8183566B2 (en) * | 2007-03-01 | 2012-05-22 | Hewlett-Packard Development Company, L.P. | Hetero-crystalline semiconductor device and method of making same |
| US7728333B2 (en) * | 2007-03-09 | 2010-06-01 | Nano-Electronic And Photonic Devices And Circuits, Llc | Nanotube array ballistic light emitting devices |
| JP4877806B2 (ja) * | 2007-03-14 | 2012-02-15 | 独立行政法人日本原子力研究開発機構 | 高分子多段ナノワイヤー及びスターバースト型ナノ粒子並びにそれらの製造方法 |
| WO2008124084A2 (en) | 2007-04-03 | 2008-10-16 | Pinkerton Joseph F | Nanoelectromechanical systems and methods for making the same |
| US8304805B2 (en) | 2009-01-09 | 2012-11-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor diodes fabricated by aspect ratio trapping with coalesced films |
| US7825328B2 (en) | 2007-04-09 | 2010-11-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Nitride-based multi-junction solar cell modules and methods for making the same |
| US8237151B2 (en) | 2009-01-09 | 2012-08-07 | Taiwan Semiconductor Manufacturing Company, Ltd. | Diode-based devices and methods for making the same |
| US9508890B2 (en) * | 2007-04-09 | 2016-11-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photovoltaics on silicon |
| KR100853200B1 (ko) * | 2007-04-11 | 2008-08-20 | 한국전자통신연구원 | 다중 구조의 나노와이어 및 그 제조방법 |
| US20090321364A1 (en) | 2007-04-20 | 2009-12-31 | Cambrios Technologies Corporation | Systems and methods for filtering nanowires |
| US8212235B2 (en) * | 2007-04-25 | 2012-07-03 | Hewlett-Packard Development Company, L.P. | Nanowire-based opto-electronic device |
| US8347726B2 (en) * | 2007-04-25 | 2013-01-08 | Hewlett-Packard Development Company, L.P. | Free-standing nanowire sensor and methods for forming and using the same |
| KR100852684B1 (ko) * | 2007-04-26 | 2008-08-19 | 연세대학교 산학협력단 | 선택적 산화아연 나노선의 제조방법 |
| US7880318B1 (en) * | 2007-04-27 | 2011-02-01 | Hewlett-Packard Development Company, L.P. | Sensing system and method of making the same |
| KR101375833B1 (ko) | 2007-05-03 | 2014-03-18 | 삼성전자주식회사 | 게르마늄 나노로드를 구비한 전계효과 트랜지스터 및 그제조방법 |
| US8330090B2 (en) * | 2007-05-07 | 2012-12-11 | Nxp, B.V. | Photosensitive device and method of manufacturing a photosensitive device using nanowire diodes |
| US7888583B2 (en) | 2007-05-07 | 2011-02-15 | Wisconsin Alumni Research Foundation | Semiconductor nanowire thermoelectric materials and devices, and processes for producing same |
| KR101356694B1 (ko) * | 2007-05-10 | 2014-01-29 | 삼성전자주식회사 | 실리콘 나노와이어를 이용한 발광 다이오드 및 그 제조방법 |
| WO2008148031A2 (en) * | 2007-05-23 | 2008-12-04 | University Of Florida Research Foundation, Inc | Method and apparatus for light absorption and charged carrier transport |
| EP2152788B1 (en) * | 2007-05-29 | 2019-08-21 | Tpk Holding Co., Ltd | Surfaces having particles and related methods |
| US8143144B2 (en) | 2007-06-06 | 2012-03-27 | Panasonic Corporation | Semiconductor nanowire and its manufacturing method |
| US20090179523A1 (en) * | 2007-06-08 | 2009-07-16 | Georgia Tech Research Corporation | Self-activated nanoscale piezoelectric motion sensor |
| US7793236B2 (en) * | 2007-06-13 | 2010-09-07 | Shocking Technologies, Inc. | System and method for including protective voltage switchable dielectric material in the design or simulation of substrate devices |
| US20080310956A1 (en) * | 2007-06-13 | 2008-12-18 | Jain Ashok K | Variable geometry gas turbine engine nacelle assembly with nanoelectromechanical system |
| US8329541B2 (en) | 2007-06-15 | 2012-12-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | InP-based transistor fabrication |
| WO2008156421A2 (en) * | 2007-06-19 | 2008-12-24 | Qunano Ab | Nanowire-based solar cell structure |
| EP2171763A2 (en) * | 2007-06-26 | 2010-04-07 | Solarity, Inc. | Lateral collection photovoltaics |
| US7982137B2 (en) * | 2007-06-27 | 2011-07-19 | Hamilton Sundstrand Corporation | Circuit board with an attached die and intermediate interposer |
| KR101361129B1 (ko) * | 2007-07-03 | 2014-02-13 | 삼성전자주식회사 | 발광소자 및 그 제조방법 |
| EP2168170A2 (en) * | 2007-07-03 | 2010-03-31 | Solasta, Inc. | Distributed coax photovoltaic device |
| DE102007031600B4 (de) * | 2007-07-06 | 2015-10-15 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Array aus vertikalen UV-Leuchtemitterdioden und Verfahren zu seiner Herstellung |
| WO2009009612A2 (en) * | 2007-07-09 | 2009-01-15 | Nanocrystal, Llc | Growth of self-assembled gan nanowires and application in nitride semiconductor bulk material |
| WO2009007907A2 (en) * | 2007-07-10 | 2009-01-15 | Nxp B.V. | Single crystal growth on a mis-matched substrate |
| EP2168147A4 (en) * | 2007-07-10 | 2012-07-11 | Univ California | COMPOSITE NANOSTASES |
| US7701013B2 (en) * | 2007-07-10 | 2010-04-20 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
| US7550354B2 (en) * | 2007-07-11 | 2009-06-23 | International Business Machines Corporation | Nanoelectromechanical transistors and methods of forming same |
| US7923310B2 (en) * | 2007-07-17 | 2011-04-12 | Sharp Laboratories Of America, Inc. | Core-shell-shell nanowire transistor and fabrication method |
| US8530338B2 (en) * | 2007-07-19 | 2013-09-10 | California Institute Of Technology | Structures of and methods for forming vertically aligned Si wire arrays |
| CN101842909A (zh) * | 2007-07-19 | 2010-09-22 | 加利福尼亚技术学院 | 半导体的有序阵列结构 |
| US9209375B2 (en) * | 2007-07-20 | 2015-12-08 | California Institute Of Technology | Methods and devices for controlling thermal conductivity and thermoelectric power of semiconductor nanowires |
| JP5096824B2 (ja) * | 2007-07-24 | 2012-12-12 | 日本電信電話株式会社 | ナノ構造およびナノ構造の作製方法 |
| EP2019313B1 (en) * | 2007-07-25 | 2015-09-16 | Stichting IMEC Nederland | Sensor device comprising elongated nanostructures, its use and manufacturing method |
| FR2919759A1 (fr) * | 2007-08-02 | 2009-02-06 | Chambre De Commerce Et D Ind D | Procede et generateur thermoelectrique/thermoionique de conversion d'ondes electromagnetiques par des superreseaux |
| US8945304B2 (en) * | 2007-08-13 | 2015-02-03 | The Board of Regents of the Nevada System of Higher Education on behalf of the University of Nevada, Las Vegas University of Nevada | Ultrahigh vacuum process for the deposition of nanotubes and nanowires |
| KR101631043B1 (ko) * | 2007-08-21 | 2016-06-24 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 고성능 열전 속성을 갖는 나노구조체 |
| JP2010538464A (ja) | 2007-08-28 | 2010-12-09 | カリフォルニア インスティテュート オブ テクノロジー | ポリマ埋め込み型半導体ロッドアレイ |
| US7714317B2 (en) * | 2007-08-30 | 2010-05-11 | Brookhaven Science Associates, Llc | Assembly of ordered carbon shells on semiconducting nanomaterials |
| CN101785116A (zh) * | 2007-08-31 | 2010-07-21 | 长青太阳能股份有限公司 | 用于带状晶体的减少润湿的线 |
| JP2010538495A (ja) * | 2007-09-07 | 2010-12-09 | アンバーウェーブ・システムズ・コーポレーション | 多接合太陽電池 |
| US8519437B2 (en) * | 2007-09-14 | 2013-08-27 | Cree, Inc. | Polarization doping in nitride based diodes |
| US7985394B2 (en) * | 2007-09-19 | 2011-07-26 | Gideon Duvall | System and method for manufacturing carbon nanotubes |
| US7501636B1 (en) | 2007-09-20 | 2009-03-10 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Nanotunneling junction-based hyperspectal polarimetric photodetector and detection method |
| US8378333B2 (en) * | 2007-09-27 | 2013-02-19 | University Of Maryland | Lateral two-terminal nanotube devices and method for their formation |
| US9012937B2 (en) | 2007-10-10 | 2015-04-21 | Cree, Inc. | Multiple conversion material light emitting diode package and method of fabricating same |
| WO2009051835A1 (en) * | 2007-10-18 | 2009-04-23 | United States Of America As Representated By The Administrator Of The National Aeronautics And Space Administration | X-ray diffraction wafer mapping method for rhombohedral super-hetero-epitaxy |
| FR2922685B1 (fr) * | 2007-10-22 | 2011-02-25 | Commissariat Energie Atomique | Dispositif optoelectronique a base de nanofils et procedes correspondants |
| US7915146B2 (en) * | 2007-10-23 | 2011-03-29 | International Business Machines Corporation | Controlled doping of semiconductor nanowires |
| EP2200934A4 (en) | 2007-10-26 | 2012-10-17 | Qunano Ab | GROWTH OF NANOWILS ON DISSIMILAR MATERIAL |
| WO2009064380A2 (en) | 2007-11-09 | 2009-05-22 | California Institute Of Technology | Fabrication of anchored carbon nanotube array devices for integrated light collection and energy conversion |
| FR2923601B1 (fr) | 2007-11-12 | 2010-01-01 | Commissariat Energie Atomique | Detecteur de rayonnement electromagnetique a connexion par nanofil et procede de realisation |
| FR2923602B1 (fr) * | 2007-11-12 | 2009-11-20 | Commissariat Energie Atomique | Detecteur de rayonnement electromagnetique a thermometre a nanofil et procede de realisation |
| JP2009140975A (ja) * | 2007-12-04 | 2009-06-25 | Panasonic Electric Works Co Ltd | 半導体発光装置およびそれを用いる照明装置ならびに半導体発光装置の製造方法 |
| US8319002B2 (en) * | 2007-12-06 | 2012-11-27 | Nanosys, Inc. | Nanostructure-enhanced platelet binding and hemostatic structures |
| EP2219572A4 (en) | 2007-12-06 | 2014-05-28 | Nanosys Inc | RESORBABLE HEMOSTATIC STRUCTURES ENHANCED BY NANOMATERIAL AND BANDING MATERIALS |
| US20090155963A1 (en) * | 2007-12-12 | 2009-06-18 | Hawkins Gilbert A | Forming thin film transistors using ablative films |
| US7927905B2 (en) * | 2007-12-21 | 2011-04-19 | Palo Alto Research Center Incorporated | Method of producing microsprings having nanowire tip structures |
| US8273983B2 (en) | 2007-12-21 | 2012-09-25 | Hewlett-Packard Development Company, L.P. | Photonic device and method of making same using nanowires |
| US8148800B2 (en) * | 2008-01-11 | 2012-04-03 | Hewlett-Packard Development Company, L.P. | Nanowire-based semiconductor device and method employing removal of residual carriers |
| US8206614B2 (en) * | 2008-01-18 | 2012-06-26 | Shocking Technologies, Inc. | Voltage switchable dielectric material having bonded particle constituents |
| US8182982B2 (en) * | 2008-04-19 | 2012-05-22 | Rolith Inc | Method and device for patterning a disk |
| KR101400238B1 (ko) * | 2008-01-23 | 2014-05-29 | 고려대학교 산학협력단 | 와이어를 이용하는 공진 구조체와 공진 터널링 트랜지스터및 공진 구조체 제조 방법 |
| US8624224B2 (en) * | 2008-01-24 | 2014-01-07 | Nano-Electronic And Photonic Devices And Circuits, Llc | Nanotube array bipolar transistors |
| US8492249B2 (en) * | 2008-01-24 | 2013-07-23 | Nano-Electronic And Photonic Devices And Circuits, Llc | Methods of forming catalytic nanopads |
| US8440994B2 (en) * | 2008-01-24 | 2013-05-14 | Nano-Electronic And Photonic Devices And Circuits, Llc | Nanotube array electronic and opto-electronic devices |
| US8610125B2 (en) * | 2008-01-24 | 2013-12-17 | Nano-Electronic And Photonic Devices And Circuits, Llc | Nanotube array light emitting diodes |
| US8610104B2 (en) * | 2008-01-24 | 2013-12-17 | Nano-Electronic And Photonic Devices And Circuits, Llc | Nanotube array injection lasers |
| US20090188557A1 (en) * | 2008-01-30 | 2009-07-30 | Shih-Yuan Wang | Photonic Device And Method Of Making Same Using Nanowire Bramble Layer |
| US8603246B2 (en) * | 2008-01-30 | 2013-12-10 | Palo Alto Research Center Incorporated | Growth reactor systems and methods for low-temperature synthesis of nanowires |
| WO2009096961A1 (en) * | 2008-01-30 | 2009-08-06 | Hewlett-Packard Development Company, L.P. | Nanostructures and methods of making the same |
| WO2009099425A2 (en) | 2008-02-07 | 2009-08-13 | Qd Vision, Inc. | Flexible devices including semiconductor nanocrystals, arrays, and methods |
| CN101971360A (zh) * | 2008-02-08 | 2011-02-09 | 清洁电池国际股份有限公司 | 用于发电的基于纳米棒的复合结构 |
| KR101436000B1 (ko) * | 2008-02-22 | 2014-08-29 | 삼성전자주식회사 | 나노 또는 마이크로 크기의 다이오드 및 이의 제조 방법 |
| CN101960570A (zh) * | 2008-02-26 | 2011-01-26 | Nxp股份有限公司 | 制造半导体器件的方法和半导体器件 |
| US8551558B2 (en) * | 2008-02-29 | 2013-10-08 | International Business Machines Corporation | Techniques for enhancing efficiency of photovoltaic devices using high-aspect-ratio nanostructures |
| US8592675B2 (en) * | 2008-02-29 | 2013-11-26 | International Business Machines Corporation | Photovoltaic devices with enhanced efficiencies using high-aspect-ratio nanostructures |
| US8022601B2 (en) * | 2008-03-17 | 2011-09-20 | Georgia Tech Research Corporation | Piezoelectric-coated carbon nanotube generators |
| CN102113306A (zh) * | 2008-03-20 | 2011-06-29 | 惠普开发有限公司 | 基于缩略图的图像质量检查 |
| KR20100126541A (ko) * | 2008-03-24 | 2010-12-01 | 더 리전츠 오브 더 유니버시티 오브 캘리포니아 | 구별된 영역들을 갖는 복합 나노로드 |
| US8273591B2 (en) * | 2008-03-25 | 2012-09-25 | International Business Machines Corporation | Super lattice/quantum well nanowires |
| GB2459251A (en) | 2008-04-01 | 2009-10-21 | Sharp Kk | Semiconductor nanowire devices |
| US8203421B2 (en) * | 2008-04-14 | 2012-06-19 | Shocking Technologies, Inc. | Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration |
| KR20090109980A (ko) * | 2008-04-17 | 2009-10-21 | 한국과학기술연구원 | 가시광 대역 반도체 나노선 광센서 및 이의 제조 방법 |
| US7960715B2 (en) * | 2008-04-24 | 2011-06-14 | University Of Iowa Research Foundation | Semiconductor heterostructure nanowire devices |
| ES2764964T3 (es) | 2008-04-30 | 2020-06-05 | Nanosys Inc | Superficies resistentes al ensuciamiento para esferas reflectivas |
| US9287469B2 (en) * | 2008-05-02 | 2016-03-15 | Cree, Inc. | Encapsulation for phosphor-converted white light emitting diode |
| US20100326503A1 (en) * | 2008-05-08 | 2010-12-30 | Georgia Tech Research Corporation | Fiber Optic Solar Nanogenerator Cells |
| WO2009141472A1 (es) * | 2008-05-20 | 2009-11-26 | Antonio Miravete De Marco | Sistemay método de monitorización del daño en estructuras |
| US7902540B2 (en) * | 2008-05-21 | 2011-03-08 | International Business Machines Corporation | Fast P-I-N photodetector with high responsitivity |
| US7705523B2 (en) * | 2008-05-27 | 2010-04-27 | Georgia Tech Research Corporation | Hybrid solar nanogenerator cells |
| US8183667B2 (en) | 2008-06-03 | 2012-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth of crystalline material |
| US8207511B2 (en) * | 2008-06-05 | 2012-06-26 | Performance Indicator, Llc | Photoluminescent fibers, compositions and fabrics made therefrom |
| US8390005B2 (en) | 2008-06-30 | 2013-03-05 | Hewlett-Packard Development Company, L.P. | Apparatus and method for nanowire optical emission |
| US8274097B2 (en) | 2008-07-01 | 2012-09-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Reduction of edge effects from aspect ratio trapping |
| US8294141B2 (en) * | 2008-07-07 | 2012-10-23 | Georgia Tech Research Corporation | Super sensitive UV detector using polymer functionalized nanobelts |
| US20100014251A1 (en) * | 2008-07-15 | 2010-01-21 | Advanced Micro Devices, Inc. | Multidimensional Thermal Management Device for an Integrated Circuit Chip |
| US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
| EP2304802B8 (en) * | 2008-07-18 | 2013-12-04 | Panasonic Corporation | Semiconductor material |
| US8178784B1 (en) | 2008-07-20 | 2012-05-15 | Charles Wesley Blackledge | Small pins and microscopic applications thereof |
| US8569848B2 (en) | 2008-07-21 | 2013-10-29 | The Regents Of The University Of California | Nanotube phonon waveguide |
| WO2010014099A1 (en) * | 2008-07-31 | 2010-02-04 | Hewlett-Packard Development Company, L.P. | Nano-wire optical block devices for amplifying, modulating, and detecting optical signals |
| KR101524766B1 (ko) * | 2008-08-07 | 2015-06-02 | 삼성전자주식회사 | 전기 에너지 발생 장치 및 그 제조 방법 |
| WO2010022353A1 (en) | 2008-08-21 | 2010-02-25 | Innova Meterials, Llc | Enhanced surfaces, coatings, and related methods |
| US20100047535A1 (en) * | 2008-08-22 | 2010-02-25 | Lex Kosowsky | Core layer structure having voltage switchable dielectric material |
| US20100051932A1 (en) * | 2008-08-28 | 2010-03-04 | Seo-Yong Cho | Nanostructure and uses thereof |
| JP5029542B2 (ja) * | 2008-09-02 | 2012-09-19 | ソニー株式会社 | 一次元ナノ構造体の製造方法及びその装置 |
| US9343490B2 (en) | 2013-08-09 | 2016-05-17 | Zena Technologies, Inc. | Nanowire structured color filter arrays and fabrication method of the same |
| US8735797B2 (en) | 2009-12-08 | 2014-05-27 | Zena Technologies, Inc. | Nanowire photo-detector grown on a back-side illuminated image sensor |
| US20100304061A1 (en) * | 2009-05-26 | 2010-12-02 | Zena Technologies, Inc. | Fabrication of high aspect ratio features in a glass layer by etching |
| US9515218B2 (en) * | 2008-09-04 | 2016-12-06 | Zena Technologies, Inc. | Vertical pillar structured photovoltaic devices with mirrors and optical claddings |
| US8866065B2 (en) | 2010-12-13 | 2014-10-21 | Zena Technologies, Inc. | Nanowire arrays comprising fluorescent nanowires |
| US8229255B2 (en) * | 2008-09-04 | 2012-07-24 | Zena Technologies, Inc. | Optical waveguides in image sensors |
| US8507840B2 (en) | 2010-12-21 | 2013-08-13 | Zena Technologies, Inc. | Vertically structured passive pixel arrays and methods for fabricating the same |
| US8748799B2 (en) | 2010-12-14 | 2014-06-10 | Zena Technologies, Inc. | Full color single pixel including doublet or quadruplet si nanowires for image sensors |
| US20100148221A1 (en) * | 2008-11-13 | 2010-06-17 | Zena Technologies, Inc. | Vertical photogate (vpg) pixel structure with nanowires |
| KR20100028412A (ko) * | 2008-09-04 | 2010-03-12 | 삼성전자주식회사 | 나노 막대를 이용한 발광 다이오드 및 그 제조 방법 |
| US8274039B2 (en) | 2008-11-13 | 2012-09-25 | Zena Technologies, Inc. | Vertical waveguides with various functionality on integrated circuits |
| US20110115041A1 (en) * | 2009-11-19 | 2011-05-19 | Zena Technologies, Inc. | Nanowire core-shell light pipes |
| US9000353B2 (en) | 2010-06-22 | 2015-04-07 | President And Fellows Of Harvard College | Light absorption and filtering properties of vertically oriented semiconductor nano wires |
| US8269985B2 (en) * | 2009-05-26 | 2012-09-18 | Zena Technologies, Inc. | Determination of optimal diameters for nanowires |
| US9406709B2 (en) | 2010-06-22 | 2016-08-02 | President And Fellows Of Harvard College | Methods for fabricating and using nanowires |
| US8299472B2 (en) | 2009-12-08 | 2012-10-30 | Young-June Yu | Active pixel sensor with nanowire structured photodetectors |
| US8890271B2 (en) | 2010-06-30 | 2014-11-18 | Zena Technologies, Inc. | Silicon nitride light pipes for image sensors |
| US8791470B2 (en) * | 2009-10-05 | 2014-07-29 | Zena Technologies, Inc. | Nano structured LEDs |
| US9299866B2 (en) | 2010-12-30 | 2016-03-29 | Zena Technologies, Inc. | Nanowire array based solar energy harvesting device |
| US8384007B2 (en) * | 2009-10-07 | 2013-02-26 | Zena Technologies, Inc. | Nano wire based passive pixel image sensor |
| US8835831B2 (en) | 2010-06-22 | 2014-09-16 | Zena Technologies, Inc. | Polarized light detecting device and fabrication methods of the same |
| US9082673B2 (en) | 2009-10-05 | 2015-07-14 | Zena Technologies, Inc. | Passivated upstanding nanostructures and methods of making the same |
| US8519379B2 (en) * | 2009-12-08 | 2013-08-27 | Zena Technologies, Inc. | Nanowire structured photodiode with a surrounding epitaxially grown P or N layer |
| US8546742B2 (en) | 2009-06-04 | 2013-10-01 | Zena Technologies, Inc. | Array of nanowires in a single cavity with anti-reflective coating on substrate |
| US9478685B2 (en) | 2014-06-23 | 2016-10-25 | Zena Technologies, Inc. | Vertical pillar structured infrared detector and fabrication method for the same |
| US8889455B2 (en) * | 2009-12-08 | 2014-11-18 | Zena Technologies, Inc. | Manufacturing nanowire photo-detector grown on a back-side illuminated image sensor |
| US20100065785A1 (en) * | 2008-09-17 | 2010-03-18 | Lex Kosowsky | Voltage switchable dielectric material containing boron compound |
| US20100072515A1 (en) * | 2008-09-19 | 2010-03-25 | Amberwave Systems Corporation | Fabrication and structures of crystalline material |
| CN102160145B (zh) | 2008-09-19 | 2013-08-21 | 台湾积体电路制造股份有限公司 | 通过外延层过成长的元件形成 |
| US8253211B2 (en) | 2008-09-24 | 2012-08-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor sensor structures with reduced dislocation defect densities |
| JP2012504870A (ja) * | 2008-09-30 | 2012-02-23 | ショッキング テクノロジーズ インコーポレイテッド | 導電コアシェル粒子を含有する電圧で切替可能な誘電体材料 |
| US9208931B2 (en) * | 2008-09-30 | 2015-12-08 | Littelfuse, Inc. | Voltage switchable dielectric material containing conductor-on-conductor core shelled particles |
| KR20110074605A (ko) * | 2008-10-20 | 2011-06-30 | 휴렛-팩커드 디벨롭먼트 컴퍼니, 엘.피. | 나노와이어 볼로미터 광 검출기 |
| US20110008568A1 (en) * | 2008-11-03 | 2011-01-13 | Bongsoo Kim | Oriented noble metal single crystalline nanowire and preparation method thereof |
| US8362871B2 (en) * | 2008-11-05 | 2013-01-29 | Shocking Technologies, Inc. | Geometric and electric field considerations for including transient protective material in substrate devices |
| US20110210480A1 (en) * | 2008-11-18 | 2011-09-01 | Rolith, Inc | Nanostructures with anti-counterefeiting features and methods of fabricating the same |
| US8540889B1 (en) | 2008-11-19 | 2013-09-24 | Nanosys, Inc. | Methods of generating liquidphobic surfaces |
| US9494615B2 (en) * | 2008-11-24 | 2016-11-15 | Massachusetts Institute Of Technology | Method of making and assembling capsulated nanostructures |
| US8354291B2 (en) | 2008-11-24 | 2013-01-15 | University Of Southern California | Integrated circuits based on aligned nanotubes |
| US7940381B2 (en) * | 2008-11-26 | 2011-05-10 | International Business Machines Corporation | Semiconductor nanowire electromagnetic radiation sensor |
| KR101249292B1 (ko) * | 2008-11-26 | 2013-04-01 | 한국전자통신연구원 | 열전소자, 열전소자 모듈, 및 그 열전 소자의 형성 방법 |
| CN101752092B (zh) * | 2008-11-27 | 2013-08-21 | 鸿富锦精密工业(深圳)有限公司 | 太阳能电池工作电极、其制造方法及太阳能电池 |
| CN102308669A (zh) * | 2008-12-04 | 2012-01-04 | 加利福尼亚大学董事会 | 电子注入纳米结构半导体材料阳极电致发光的方法和装置 |
| US9059397B2 (en) | 2008-12-08 | 2015-06-16 | Electronics And Telecommunications Research Institute | Nano piezoelectric device having a nanowire and method of forming the same |
| JP4971393B2 (ja) * | 2008-12-08 | 2012-07-11 | 韓國電子通信研究院 | ナノ圧電素子及びその形成方法 |
| US8093139B2 (en) * | 2008-12-11 | 2012-01-10 | Anteos, Inc. | Method for fabrication of aligned nanowire structures in semiconductor materials for electronic, optoelectronic, photonic and plasmonic devices |
| US8890115B2 (en) * | 2009-01-06 | 2014-11-18 | Brookhaven Science Associates, Llc | Stable and metastable nanowires displaying locally controllable properties |
| US8389387B2 (en) * | 2009-01-06 | 2013-03-05 | Brookhaven Science Associates, Llc | Segmented nanowires displaying locally controllable properties |
| US8441255B1 (en) * | 2009-01-22 | 2013-05-14 | Louisiana Tech University Research Foundation, a divison of Louisiana Tech University Foundation, Inc. | Thermocooling of GMR sensors |
| US9226391B2 (en) | 2009-01-27 | 2015-12-29 | Littelfuse, Inc. | Substrates having voltage switchable dielectric materials |
| EP2381972A2 (en) * | 2009-01-27 | 2011-11-02 | California Institute Of Technology | Drug delivery and substance transfer facilitated by nano-enhanced device having aligned carbon nanotubes protruding from device surface |
| US8272123B2 (en) | 2009-01-27 | 2012-09-25 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| US8399773B2 (en) | 2009-01-27 | 2013-03-19 | Shocking Technologies, Inc. | Substrates having voltage switchable dielectric materials |
| CN102369610A (zh) * | 2009-01-29 | 2012-03-07 | 惠普开发有限公司 | 半导体异质结构热电器件 |
| TWI383055B (zh) * | 2009-02-17 | 2013-01-21 | Univ Nat Chunghsing | The Method of Making Metal Material Pattern |
| US9005548B2 (en) * | 2009-02-25 | 2015-04-14 | California Institute Of Technology | Methods for fabricating high aspect ratio probes and deforming high aspect ratio nanopillars and micropillars |
| US20100212727A1 (en) * | 2009-02-26 | 2010-08-26 | Ji Ung Lee | Apparatus and methods for continuously growing carbon nanotubes and graphene sheets |
| US8242353B2 (en) | 2009-03-16 | 2012-08-14 | International Business Machines Corporation | Nanowire multijunction solar cell |
| KR101679099B1 (ko) | 2009-03-26 | 2016-11-23 | 쇼킹 테크놀로지스 인코포레이티드 | 전압 스위칭형 유전 물질을 갖는 소자 |
| CN102379046B (zh) | 2009-04-02 | 2015-06-17 | 台湾积体电路制造股份有限公司 | 从晶体材料的非极性平面形成的器件及其制作方法 |
| US8013324B2 (en) * | 2009-04-03 | 2011-09-06 | International Business Machines Corporation | Structurally stabilized semiconductor nanowire |
| US7943530B2 (en) * | 2009-04-03 | 2011-05-17 | International Business Machines Corporation | Semiconductor nanowires having mobility-optimized orientations |
| US7902541B2 (en) * | 2009-04-03 | 2011-03-08 | International Business Machines Corporation | Semiconductor nanowire with built-in stress |
| US8237150B2 (en) * | 2009-04-03 | 2012-08-07 | International Business Machines Corporation | Nanowire devices for enhancing mobility through stress engineering |
| US20110089402A1 (en) * | 2009-04-10 | 2011-04-21 | Pengfei Qi | Composite Nanorod-Based Structures for Generating Electricity |
| CN102428585A (zh) * | 2009-04-15 | 2012-04-25 | 惠普开发有限公司 | 具有可变横截面连接结构的热电装置 |
| KR101725565B1 (ko) * | 2009-04-16 | 2017-04-10 | 메르크 파텐트 게엠베하 | 규소 나노로드의 합성 방법 |
| FR2944783B1 (fr) * | 2009-04-28 | 2011-06-03 | Commissariat Energie Atomique | Procede d'elaboration de nanofils de silicium et/ou de germanium. |
| US9065253B2 (en) * | 2009-05-13 | 2015-06-23 | University Of Washington Through Its Center For Commercialization | Strain modulated nanostructures for optoelectronic devices and associated systems and methods |
| EP3859830B1 (en) * | 2009-05-19 | 2022-03-09 | OneD Material, Inc. | Nanostructured materials for battery applications |
| WO2010135439A2 (en) | 2009-05-19 | 2010-11-25 | Howard University | Nanothermocouple detector based on thermoelectric nanowires |
| JP5674285B2 (ja) * | 2009-05-25 | 2015-02-25 | 株式会社日立製作所 | レーザー誘起表面ナノ配列構造の作製方法及びそれを用いて作製したデバイス構造 |
| WO2010138506A1 (en) | 2009-05-26 | 2010-12-02 | Nanosys, Inc. | Methods and systems for electric field deposition of nanowires and other devices |
| US8623288B1 (en) | 2009-06-29 | 2014-01-07 | Nanosys, Inc. | Apparatus and methods for high density nanowire growth |
| US8415692B2 (en) | 2009-07-06 | 2013-04-09 | Cree, Inc. | LED packages with scattering particle regions |
| US8368125B2 (en) | 2009-07-20 | 2013-02-05 | International Business Machines Corporation | Multiple orientation nanowires with gate stack stressors |
| US8569900B2 (en) | 2009-07-20 | 2013-10-29 | Hewlett-Packard Development Company, L.P. | Nanowire sensor with angled segments that are differently functionalized |
| US20110012177A1 (en) * | 2009-07-20 | 2011-01-20 | International Business Machines Corporation | Nanostructure For Changing Electric Mobility |
| US9112082B2 (en) * | 2009-07-23 | 2015-08-18 | Danmarks Tekniske Universitet | Electrically driven single photon source |
| JP2011040663A (ja) * | 2009-08-18 | 2011-02-24 | Hioki Ee Corp | サーモパイル型赤外線検知素子およびその製造方法 |
| US9074296B2 (en) * | 2009-08-21 | 2015-07-07 | Cornell University | Mesoporous Co3O4 nanoparticles, associated methods and applications |
| US10032569B2 (en) * | 2009-08-26 | 2018-07-24 | University Of Maryland, College Park | Nanodevice arrays for electrical energy storage, capture and management and method for their formation |
| US8568027B2 (en) * | 2009-08-26 | 2013-10-29 | Ut-Battelle, Llc | Carbon nanotube temperature and pressure sensors |
| US8912522B2 (en) * | 2009-08-26 | 2014-12-16 | University Of Maryland | Nanodevice arrays for electrical energy storage, capture and management and method for their formation |
| US20110049473A1 (en) | 2009-08-28 | 2011-03-03 | International Business Machines Corporation | Film Wrapped NFET Nanowire |
| US9053844B2 (en) * | 2009-09-09 | 2015-06-09 | Littelfuse, Inc. | Geometric configuration or alignment of protective material in a gap structure for electrical devices |
| US8208136B2 (en) * | 2009-09-11 | 2012-06-26 | Ut-Battelle, Llc | Large area substrate for surface enhanced Raman spectroscopy (SERS) using glass-drawing technique |
| US8101913B2 (en) * | 2009-09-11 | 2012-01-24 | Ut-Battelle, Llc | Method of making large area conformable shape structures for detector/sensor applications using glass drawing technique and postprocessing |
| US8461600B2 (en) * | 2009-09-11 | 2013-06-11 | Ut-Battelle, Llc | Method for morphological control and encapsulation of materials for electronics and energy applications |
| WO2011038228A1 (en) | 2009-09-24 | 2011-03-31 | President And Fellows Of Harvard College | Bent nanowires and related probing of species |
| US8524527B2 (en) * | 2009-09-25 | 2013-09-03 | University Of Southern California | High-performance single-crystalline N-type dopant-doped metal oxide nanowires for transparent thin film transistors and active matrix organic light-emitting diode displays |
| US20110076841A1 (en) * | 2009-09-30 | 2011-03-31 | Kahen Keith B | Forming catalyzed ii-vi semiconductor nanowires |
| US8274138B2 (en) * | 2009-09-30 | 2012-09-25 | Eastman Kodak Company | II-VI semiconductor nanowires |
| JP4996660B2 (ja) * | 2009-10-15 | 2012-08-08 | シャープ株式会社 | 発光装置およびその製造方法 |
| KR20110041401A (ko) * | 2009-10-15 | 2011-04-21 | 샤프 가부시키가이샤 | 발광 장치 및 그 제조 방법 |
| JP4897034B2 (ja) * | 2009-12-03 | 2012-03-14 | シャープ株式会社 | 棒状構造発光素子、発光装置、発光装置の製造方法、バックライト、照明装置および表示装置 |
| US8872214B2 (en) | 2009-10-19 | 2014-10-28 | Sharp Kabushiki Kaisha | Rod-like light-emitting device, method of manufacturing rod-like light-emitting device, backlight, illuminating device, and display device |
| US20110101302A1 (en) * | 2009-11-05 | 2011-05-05 | University Of Southern California | Wafer-scale fabrication of separated carbon nanotube thin-film transistors |
| US20110114146A1 (en) * | 2009-11-13 | 2011-05-19 | Alphabet Energy, Inc. | Uniwafer thermoelectric modules |
| RU2399698C1 (ru) * | 2009-11-16 | 2010-09-20 | Учреждение Российской академии наук Институт высокотемпературной электрохимии Уральского отделения РАН | Способ получения кремния нано- или микроволокнистой структуры |
| EP2502264A4 (en) | 2009-11-19 | 2015-09-16 | California Inst Of Techn | METHOD FOR PRODUCING SELF-ORIENTAL ARRANGEMENTS ON SEMICONDUCTORS |
| US9018684B2 (en) | 2009-11-23 | 2015-04-28 | California Institute Of Technology | Chemical sensing and/or measuring devices and methods |
| US9316569B2 (en) | 2009-11-27 | 2016-04-19 | Hysitron, Inc. | Micro electro-mechanical heater |
| US9112085B2 (en) * | 2009-11-30 | 2015-08-18 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency broadband semiconductor nanowire devices |
| US8563395B2 (en) * | 2009-11-30 | 2013-10-22 | The Royal Institute For The Advancement Of Learning/Mcgill University | Method of growing uniform semiconductor nanowires without foreign metal catalyst and devices thereof |
| JP2011135058A (ja) * | 2009-11-30 | 2011-07-07 | Honda Motor Co Ltd | 太陽電池素子、カラーセンサ、ならびに発光素子及び受光素子の製造方法 |
| WO2011066570A2 (en) * | 2009-11-30 | 2011-06-03 | California Institute Of Technology | Semiconductor wire array structures, and solar cells and photodetectors based on such structures |
| US8097515B2 (en) * | 2009-12-04 | 2012-01-17 | International Business Machines Corporation | Self-aligned contacts for nanowire field effect transistors |
| US8129247B2 (en) | 2009-12-04 | 2012-03-06 | International Business Machines Corporation | Omega shaped nanowire field effect transistors |
| US8455334B2 (en) | 2009-12-04 | 2013-06-04 | International Business Machines Corporation | Planar and nanowire field effect transistors |
| US8384065B2 (en) * | 2009-12-04 | 2013-02-26 | International Business Machines Corporation | Gate-all-around nanowire field effect transistors |
| US8173993B2 (en) * | 2009-12-04 | 2012-05-08 | International Business Machines Corporation | Gate-all-around nanowire tunnel field effect transistors |
| US8143113B2 (en) | 2009-12-04 | 2012-03-27 | International Business Machines Corporation | Omega shaped nanowire tunnel field effect transistors fabrication |
| TWI416746B (zh) * | 2009-12-09 | 2013-11-21 | Wintek Corp | 太陽能控光模組 |
| FR2953824B1 (fr) * | 2009-12-11 | 2015-04-24 | Univ Toulouse 3 Paul Sabatier | Materiau solide composite piezoelectrique et/ou pyroelectrique, procede d'obtention et utilisation d'un tel materiau |
| US20110140071A1 (en) * | 2009-12-14 | 2011-06-16 | Olga Kryliouk | Nano-spherical group iii-nitride materials |
| US8536615B1 (en) | 2009-12-16 | 2013-09-17 | Cree, Inc. | Semiconductor device structures with modulated and delta doping and related methods |
| US8604461B2 (en) * | 2009-12-16 | 2013-12-10 | Cree, Inc. | Semiconductor device structures with modulated doping and related methods |
| US9305766B2 (en) * | 2009-12-22 | 2016-04-05 | Qunano Ab | Method for manufacturing a nanowire structure |
| KR100974626B1 (ko) * | 2009-12-22 | 2010-08-09 | 동국대학교 산학협력단 | 접촉 구조의 나노로드 반도체 소자 및 그 제조 방법 |
| KR20110080591A (ko) * | 2010-01-06 | 2011-07-13 | 삼성전자주식회사 | 나노와이어를 이용한 태양전지 및 그 제조방법 |
| US8722492B2 (en) | 2010-01-08 | 2014-05-13 | International Business Machines Corporation | Nanowire pin tunnel field effect devices |
| WO2011090863A1 (en) * | 2010-01-19 | 2011-07-28 | Eastman Kodak Company | Ii-vi core-shell semiconductor nanowires |
| US8212236B2 (en) | 2010-01-19 | 2012-07-03 | Eastman Kodak Company | II-VI core-shell semiconductor nanowires |
| US8377729B2 (en) * | 2010-01-19 | 2013-02-19 | Eastman Kodak Company | Forming II-VI core-shell semiconductor nanowires |
| EP2529208B1 (en) | 2010-01-26 | 2024-05-08 | Metis Design Corporation | Multifunctional carbon nanotube-engineered structures |
| EP2528858A1 (en) * | 2010-01-29 | 2012-12-05 | Hewlett Packard Development Company, L.P. | Environment sensitive devices |
| CN102834472B (zh) * | 2010-02-05 | 2015-04-22 | 凯博瑞奥斯技术公司 | 光敏墨组合物和透明导体以及它们的使用方法 |
| KR101100230B1 (ko) * | 2010-02-10 | 2011-12-30 | 한국과학기술원 | 산화아연 나노막대 uv선을 이용한 레이저 소자 |
| US20110198544A1 (en) * | 2010-02-18 | 2011-08-18 | Lex Kosowsky | EMI Voltage Switchable Dielectric Materials Having Nanophase Materials |
| US9224728B2 (en) * | 2010-02-26 | 2015-12-29 | Littelfuse, Inc. | Embedded protection against spurious electrical events |
| US9082622B2 (en) | 2010-02-26 | 2015-07-14 | Littelfuse, Inc. | Circuit elements comprising ferroic materials |
| US9320135B2 (en) * | 2010-02-26 | 2016-04-19 | Littelfuse, Inc. | Electric discharge protection for surface mounted and embedded components |
| US9202954B2 (en) * | 2010-03-03 | 2015-12-01 | Q1 Nanosystems Corporation | Nanostructure and photovoltaic cell implementing same |
| JP2011211047A (ja) * | 2010-03-30 | 2011-10-20 | Sharp Corp | 表示装置、表示装置の製造方法および表示装置の駆動方法 |
| WO2011111516A1 (ja) | 2010-03-12 | 2011-09-15 | シャープ株式会社 | 発光装置の製造方法、発光装置、照明装置、バックライト、液晶パネル、表示装置、表示装置の製造方法、表示装置の駆動方法および液晶表示装置 |
| WO2011156042A2 (en) | 2010-03-23 | 2011-12-15 | California Institute Of Technology | Heterojunction wire array solar cells |
| US8860006B2 (en) * | 2010-03-26 | 2014-10-14 | The Regents Of The University Of California | Spin transistor having multiferroic gate dielectric |
| WO2011123257A1 (en) * | 2010-03-30 | 2011-10-06 | Eastman Kodak Company | Light emitting nanowire device |
| WO2011127207A2 (en) * | 2010-04-07 | 2011-10-13 | California Institute Of Technology | Simple method for producing superhydrophobic carbon nanotube array |
| US8324940B2 (en) | 2010-04-13 | 2012-12-04 | International Business Machines Corporation | Nanowire circuits in matched devices |
| US8631687B2 (en) | 2010-04-19 | 2014-01-21 | Hysitron, Inc. | Indenter assembly |
| US8614452B2 (en) * | 2010-04-26 | 2013-12-24 | Gwangju Institute Of Science And Technology | Light-emitting diode having zinc oxide nanorods and method of fabricating the same |
| US20110267436A1 (en) * | 2010-04-30 | 2011-11-03 | Nauganeedles Llc | Nanowire Bonding Method and Apparatus |
| WO2011137446A2 (en) * | 2010-04-30 | 2011-11-03 | University Of Southern California | Fabrication of silicon nanowires |
| US8361907B2 (en) | 2010-05-10 | 2013-01-29 | International Business Machines Corporation | Directionally etched nanowire field effect transistors |
| US8324030B2 (en) | 2010-05-12 | 2012-12-04 | International Business Machines Corporation | Nanowire tunnel field effect transistors |
| KR101324028B1 (ko) * | 2010-05-20 | 2013-11-01 | 웅진케미칼 주식회사 | 전기전도도가 개선된 다층형 금속 나노와이어 및 그 제조방법 |
| US8189639B2 (en) | 2010-05-28 | 2012-05-29 | Corning Incorporated | GaN-based laser diodes with misfit dislocations displaced from the active region |
| RU2427526C1 (ru) * | 2010-06-01 | 2011-08-27 | Учреждение Российской академии наук Институт высокотемпературной электрохимии Уральского отделения РАН | Способ получения нано- и микроволокон кремния электролизом диоксида кремния из расплавов солей |
| US8476637B2 (en) | 2010-06-08 | 2013-07-02 | Sundiode Inc. | Nanostructure optoelectronic device having sidewall electrical contact |
| US8659037B2 (en) | 2010-06-08 | 2014-02-25 | Sundiode Inc. | Nanostructure optoelectronic device with independently controllable junctions |
| CN103069585B (zh) * | 2010-06-08 | 2017-06-16 | 桑迪奥德股份有限公司 | 具有侧壁电接触的纳米结构光电装置 |
| US8431817B2 (en) * | 2010-06-08 | 2013-04-30 | Sundiode Inc. | Multi-junction solar cell having sidewall bi-layer electrical interconnect |
| KR20130136906A (ko) | 2010-06-18 | 2013-12-13 | 글로 에이비 | 나노와이어 led 구조와 이를 제조하기 위한 방법 |
| WO2011162461A1 (ko) * | 2010-06-25 | 2011-12-29 | 한국과학기술원 | 투명 전극 및 이의 제조 방법 |
| US8680510B2 (en) * | 2010-06-28 | 2014-03-25 | International Business Machines Corporation | Method of forming compound semiconductor |
| TWI416859B (zh) * | 2010-07-14 | 2013-11-21 | Nat Univ Tsing Hua | 微型發電器、其製備方法、及發電元件 |
| US9093818B2 (en) * | 2010-07-15 | 2015-07-28 | The Regents Of The University Of California | Nanopillar optical resonator |
| MY157260A (en) * | 2010-08-02 | 2016-05-31 | Mimos Berhad | A vibrating energy harvester device and methods thereof |
| AU2011289620C1 (en) | 2010-08-07 | 2014-08-21 | Tpk Holding Co., Ltd. | Device components with surface-embedded additives and related manufacturing methods |
| US8835231B2 (en) | 2010-08-16 | 2014-09-16 | International Business Machines Corporation | Methods of forming contacts for nanowire field effect transistors |
| US8536563B2 (en) | 2010-09-17 | 2013-09-17 | International Business Machines Corporation | Nanowire field effect transistors |
| KR20140009182A (ko) | 2010-10-22 | 2014-01-22 | 캘리포니아 인스티튜트 오브 테크놀로지 | 낮은 열전도율을 위한 나노메쉬 포노닉 구조들 및 열전 에너지 변환 재료들 |
| US9000660B2 (en) | 2010-11-15 | 2015-04-07 | Laurence H. Cooke | Uses of hydrocarbon nanorings |
| GB2500831B (en) * | 2010-11-17 | 2014-07-02 | Ibm | Nanowire devices |
| US9240328B2 (en) | 2010-11-19 | 2016-01-19 | Alphabet Energy, Inc. | Arrays of long nanostructures in semiconductor materials and methods thereof |
| CN102024635B (zh) * | 2010-11-29 | 2012-07-18 | 清华大学 | 电子发射体及电子发射元件 |
| US8736011B2 (en) | 2010-12-03 | 2014-05-27 | Alphabet Energy, Inc. | Low thermal conductivity matrices with embedded nanostructures and methods thereof |
| US20140027710A1 (en) * | 2010-12-03 | 2014-01-30 | University Of Utah Research Foundation | Quantum dot and nanowire synthesis |
| GB201021112D0 (en) | 2010-12-13 | 2011-01-26 | Ntnu Technology Transfer As | Nanowires |
| US8617412B2 (en) * | 2010-12-13 | 2013-12-31 | International Business Machines Corporation | Nano-filter and method of forming same, and method of filtration |
| KR20140012073A (ko) * | 2011-02-02 | 2014-01-29 | 알파벳 에너지, 인코포레이티드 | 나노구조 어레이를 위한 전극 구조 및 이의 제조 방법 |
| WO2012106814A1 (en) * | 2011-02-10 | 2012-08-16 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency broadband semiconductor nanowire devices and methods of fabricating without foreign metal catalysis |
| US8692230B2 (en) | 2011-03-29 | 2014-04-08 | University Of Southern California | High performance field-effect transistors |
| FR2973936B1 (fr) | 2011-04-05 | 2014-01-31 | Commissariat Energie Atomique | Procede de croissance selective sur une structure semiconductrice |
| US8636843B2 (en) * | 2011-04-07 | 2014-01-28 | Korea Institute Of Energy Research | Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof |
| WO2012155272A1 (en) * | 2011-05-17 | 2012-11-22 | Mcmaster University | Light emitting diodes and substrates |
| US8921256B2 (en) | 2011-05-24 | 2014-12-30 | Siluria Technologies, Inc. | Catalysts for petrochemical catalysis |
| US8860137B2 (en) | 2011-06-08 | 2014-10-14 | University Of Southern California | Radio frequency devices based on carbon nanomaterials |
| EP2727165A4 (en) | 2011-06-28 | 2015-08-05 | Innova Dynamics Inc | Transparent conductors incorporating additives and related manufacturing methods |
| US8664583B2 (en) * | 2011-07-01 | 2014-03-04 | The Boeing Company | Nonlinear optical surface sensing with a single thermo-electric detector |
| WO2013007798A1 (en) * | 2011-07-14 | 2013-01-17 | GEORGE, John T. | Electrical light source with thermoelectric energy recovery |
| US20130019918A1 (en) | 2011-07-18 | 2013-01-24 | The Regents Of The University Of Michigan | Thermoelectric devices, systems and methods |
| DK2736837T3 (da) | 2011-07-26 | 2021-10-25 | Oned Mat Inc | Fremgangsmåde til fremstilling af nanosiliciumtråde |
| US20130050685A1 (en) * | 2011-08-23 | 2013-02-28 | The Boeing Company | Composite structure having an embedded sensing system |
| US9170172B2 (en) | 2011-08-23 | 2015-10-27 | The Boeing Company | Composite structure having an embedded sensing system |
| KR101694873B1 (ko) * | 2011-08-24 | 2017-01-10 | 티피케이 홀딩 컴퍼니 리미티드 | 패턴화된 투명 전도체 및 관련된 제조 방법 |
| US20150053261A1 (en) * | 2011-08-29 | 2015-02-26 | Hitachi, Ltd. | Solar cell |
| US20130058158A1 (en) | 2011-09-01 | 2013-03-07 | Micron Technology, Inc. | Method, system, and device for l-shaped memory component |
| US20140224296A1 (en) * | 2011-09-20 | 2014-08-14 | The Regents Of The University Of California | Nanowire composite for thermoelectrics |
| US9059264B2 (en) * | 2011-09-26 | 2015-06-16 | Drexel University | Tunable hot-electron transfer within a nanostructure |
| US8350251B1 (en) | 2011-09-26 | 2013-01-08 | Glo Ab | Nanowire sized opto-electronic structure and method for manufacturing the same |
| US20130092222A1 (en) * | 2011-10-14 | 2013-04-18 | Nanograss Solar Llc | Nanostructured Solar Cells Utilizing Charge Plasma |
| US9147505B2 (en) | 2011-11-02 | 2015-09-29 | Ut-Battelle, Llc | Large area controlled assembly of transparent conductive networks |
| US8477551B1 (en) | 2011-11-03 | 2013-07-02 | U.S. Department Of Energy | Optical memory |
| KR102005447B1 (ko) * | 2011-11-03 | 2019-07-31 | 삼성전자주식회사 | 나노 구조체 및 이를 포함한 소자 |
| RU2478243C1 (ru) * | 2011-11-11 | 2013-03-27 | Учреждение Российской академии наук Институт прикладной физики РАН | Частотно-перестраиваемый источник когерентного излучения дальнего инфракрасного и терагерцового диапазона на полупроводниковой наногетероструктуре |
| DE102011118273A1 (de) * | 2011-11-11 | 2013-05-16 | Forschungsverbund Berlin E.V. | Herstellung einer Halbleitereinrichtung mit mindestens einem säulen- oder wandförmigen Halbleiter-Element |
| US9476816B2 (en) | 2011-11-14 | 2016-10-25 | Hysitron, Inc. | Probe tip heating assembly |
| JP6574932B2 (ja) | 2011-11-28 | 2019-09-18 | ブルカー ナノ インコーポレイテッドBruker Nano,Inc. | テストアセンブリ、加熱システム、および、サンプルをテストする方法 |
| HK1202275A1 (en) | 2011-11-29 | 2015-09-25 | Siluria Technologies, Inc. | Nanowire catalysts and methods for their use and preparation |
| KR20130069035A (ko) * | 2011-12-16 | 2013-06-26 | 삼성전자주식회사 | 그래핀상의 하이브리드 나노구조체 형성 방법 |
| TWI472069B (zh) | 2011-12-19 | 2015-02-01 | 財團法人工業技術研究院 | 熱電複合材料 |
| US8648330B2 (en) * | 2012-01-05 | 2014-02-11 | International Business Machines Corporation | Nanowire field effect transistors |
| GB201200355D0 (en) | 2012-01-10 | 2012-02-22 | Norwegian Univ Sci & Tech Ntnu | Nanowires |
| US10026560B2 (en) | 2012-01-13 | 2018-07-17 | The California Institute Of Technology | Solar fuels generator |
| US9545612B2 (en) | 2012-01-13 | 2017-01-17 | California Institute Of Technology | Solar fuel generator |
| US10205080B2 (en) | 2012-01-17 | 2019-02-12 | Matrix Industries, Inc. | Systems and methods for forming thermoelectric devices |
| KR102039389B1 (ko) | 2012-02-14 | 2019-11-01 | 헥사겜 아베 | 갈륨 질화물 나노와이어 기반의 전자 장치 |
| WO2013126432A1 (en) | 2012-02-21 | 2013-08-29 | California Institute Of Technology | Axially-integrated epitaxially-grown tandem wire arrays |
| US9051175B2 (en) | 2012-03-07 | 2015-06-09 | Alphabet Energy, Inc. | Bulk nano-ribbon and/or nano-porous structures for thermoelectric devices and methods for making the same |
| WO2013149205A1 (en) | 2012-03-29 | 2013-10-03 | California Institute Of Technology | Phononic structures and related devices and methods |
| WO2013152043A1 (en) | 2012-04-02 | 2013-10-10 | California Institute Of Technology | Solar fuels generator |
| WO2013152132A1 (en) | 2012-04-03 | 2013-10-10 | The California Institute Of Technology | Semiconductor structures for fuel generation |
| US9425254B1 (en) * | 2012-04-04 | 2016-08-23 | Ball Aerospace & Technologies Corp. | Hybrid integrated nanotube and nanostructure substrate systems and methods |
| US9784802B1 (en) * | 2012-04-11 | 2017-10-10 | Louisiana Tech Research Corporation | GMR nanowire sensors |
| US10718636B1 (en) | 2012-04-11 | 2020-07-21 | Louisiana Tech Research Corporation | Magneto-resistive sensors |
| JP2013239690A (ja) * | 2012-04-16 | 2013-11-28 | Sharp Corp | 超格子構造、前記超格子構造を備えた半導体装置および半導体発光装置、ならびに前記超格子構造の製造方法 |
| WO2013184203A2 (en) | 2012-04-23 | 2013-12-12 | Arizona Board Of Regents, A Body Corporate Of The State Of Arizona, Acting For And On Behalf Of Arizona State University | Multi-bandgap semiconductor structures and methods for using them |
| AU2013266189B2 (en) | 2012-05-24 | 2018-01-04 | Lummus Technology Llc | Catalysts comprising catalytic nanowires and their use |
| EP2861934B1 (en) | 2012-06-13 | 2017-05-03 | Hysitron, Inc. | Environmental conditioning assembly for use in mechanical testing at micron or nano-scales |
| GB201211038D0 (en) * | 2012-06-21 | 2012-08-01 | Norwegian Univ Sci & Tech Ntnu | Solar cells |
| DE102012105496A1 (de) * | 2012-06-25 | 2014-01-02 | Emitec Gesellschaft Für Emissionstechnologie Mbh | Faden mit einem thermoelektrischen Werkstoff und Verfahren zur Herstellung eines Bauelements für ein thermoelektrisches Modul |
| US9257627B2 (en) | 2012-07-23 | 2016-02-09 | Alphabet Energy, Inc. | Method and structure for thermoelectric unicouple assembly |
| JP5886709B2 (ja) * | 2012-07-27 | 2016-03-16 | 日本電信電話株式会社 | フォトニック結晶共振器の作製方法およびフォトニック結晶共振器 |
| US9349543B2 (en) | 2012-07-30 | 2016-05-24 | California Institute Of Technology | Nano tri-carbon composite systems and manufacture |
| KR20150086466A (ko) | 2012-08-17 | 2015-07-28 | 실리시움 에너지, 인크. | 열전 디바이스 형성 시스템 및 형성 방법 |
| EP2889925A4 (en) * | 2012-08-21 | 2016-04-20 | Mabuchi Mahito | THERMOELECTRIC CONVERSION ELEMENT HAVING SPACE SECTIONS REDUCING HEAT TRANSMISSION QUANTITY TO THERMOELECTRIC MATERIAL, AND ACTIVE FLUID FLOW EXCEEDING THE THERMOELECTRIC MATERIAL HIMSELF, OR RELATED SPACE SECTIONS |
| GB201215342D0 (en) | 2012-08-29 | 2012-10-10 | Ibm | Thermoelectric elementd |
| WO2014045333A1 (ja) * | 2012-09-18 | 2014-03-27 | 富士通株式会社 | 太陽電池及びその製造方法 |
| US9082930B1 (en) | 2012-10-25 | 2015-07-14 | Alphabet Energy, Inc. | Nanostructured thermolectric elements and methods of making the same |
| US20140116491A1 (en) * | 2012-10-29 | 2014-05-01 | Alphabet Energy, Inc. | Bulk-size nanostructured materials and methods for making the same by sintering nanowires |
| WO2014070795A1 (en) | 2012-10-31 | 2014-05-08 | Silicium Energy, Inc. | Methods for forming thermoelectric elements |
| WO2014071244A1 (en) * | 2012-11-01 | 2014-05-08 | The Regents Of The University Of California | Semiconductor infrared photodetectors |
| KR20140058892A (ko) * | 2012-11-07 | 2014-05-15 | 삼성정밀화학 주식회사 | 코어-쉘 구조를 갖는 나노와이어를 적용한 투명 복합전극 및 그의 제조방법 |
| KR102176589B1 (ko) * | 2012-11-16 | 2020-11-10 | 삼성전자주식회사 | 열전재료, 이를 포함하는 열전소자 및 열전장치, 및 이의 제조방법 |
| KR101998339B1 (ko) * | 2012-11-16 | 2019-07-09 | 삼성전자주식회사 | 금속 산화물 반도체의 성장 결정면 제어방법 및 제어된 성장 결정면을 가지는 금속 산화물 반도체 구조물 |
| US9224920B2 (en) | 2012-11-23 | 2015-12-29 | Lg Display Co., Ltd. | Quantum rod and method of fabricating the same |
| EP2932526A4 (en) * | 2012-12-13 | 2016-10-19 | California Inst Of Techn | PREPARATION OF ELECTRODES WITH THREE-DIMENSIONAL LARGE SURFACE |
| US10376146B2 (en) | 2013-02-06 | 2019-08-13 | California Institute Of Technology | Miniaturized implantable electrochemical sensor devices |
| US9291297B2 (en) | 2012-12-19 | 2016-03-22 | Elwha Llc | Multi-layer phononic crystal thermal insulators |
| CN103915483B (zh) | 2012-12-28 | 2019-06-14 | 瑞萨电子株式会社 | 具有被改造以减少漏电流的沟道芯部的场效应晶体管及制作方法 |
| CN103915484B (zh) * | 2012-12-28 | 2018-08-07 | 瑞萨电子株式会社 | 具有被改造以用于背栅偏置的沟道芯部的场效应晶体管及制作方法 |
| US9553223B2 (en) | 2013-01-24 | 2017-01-24 | California Institute Of Technology | Method for alignment of microwires |
| US9082911B2 (en) | 2013-01-28 | 2015-07-14 | Q1 Nanosystems Corporation | Three-dimensional metamaterial device with photovoltaic bristles |
| KR101603207B1 (ko) * | 2013-01-29 | 2016-03-14 | 삼성전자주식회사 | 나노구조 반도체 발광소자 제조방법 |
| WO2014120830A1 (en) * | 2013-01-30 | 2014-08-07 | Bandgap Engineering, Inc. | Necklaces of silicon nanowires |
| US10049871B2 (en) | 2013-02-06 | 2018-08-14 | President And Fellows Of Harvard College | Anisotropic deposition in nanoscale wires |
| US9362443B2 (en) * | 2013-03-13 | 2016-06-07 | Wafertech, Llc | Solar cell with absorber layer with three dimensional projections for energy harvesting, and method for forming the same |
| US9614026B2 (en) * | 2013-03-13 | 2017-04-04 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High mobility transport layer structures for rhombohedral Si/Ge/SiGe devices |
| US9954126B2 (en) | 2013-03-14 | 2018-04-24 | Q1 Nanosystems Corporation | Three-dimensional photovoltaic devices including cavity-containing cores and methods of manufacture |
| US20140264998A1 (en) | 2013-03-14 | 2014-09-18 | Q1 Nanosystems Corporation | Methods for manufacturing three-dimensional metamaterial devices with photovoltaic bristles |
| US20140274671A1 (en) | 2013-03-15 | 2014-09-18 | Siluria Technologies, Inc. | Catalysts for petrochemical catalysis |
| AU2014229796A1 (en) * | 2013-03-15 | 2015-10-01 | Bae Systems Plc | Directional multiband antenna |
| FR3004000B1 (fr) * | 2013-03-28 | 2016-07-15 | Aledia | Dispositif electroluminescent avec capteur integre et procede de controle de l'emission du dispositif |
| US9417465B2 (en) | 2013-04-07 | 2016-08-16 | The Regents Of The University Of Colorado, A Body Corporate | Nanophononic metamaterials |
| US10283689B2 (en) | 2013-04-07 | 2019-05-07 | The Regents Of The University Of Colorado, A Body Corporate | Phononic metamaterials comprising atomically disordered resonators |
| US10333044B2 (en) | 2013-04-07 | 2019-06-25 | The Regents Of The University Of Colorado, A Body Corporate | Phononic metamaterials adapted for reduced thermal transport |
| WO2014179340A2 (en) * | 2013-04-29 | 2014-11-06 | The University Of North Carolina At Chapel Hill | Methods and systems for chemically encoding high-resolution shapes in silicon nanowires |
| GB201311101D0 (en) | 2013-06-21 | 2013-08-07 | Norwegian Univ Sci & Tech Ntnu | Semiconducting Films |
| US9435896B2 (en) | 2013-07-31 | 2016-09-06 | Globalfoundries Inc. | Radiation detector based on charged self-assembled monolayers on nanowire devices |
| KR102149331B1 (ko) | 2013-08-30 | 2020-08-28 | 삼성전자주식회사 | 와이어 구조체와 이를 구비하는 반도체 소자 및 와이어 구조체의 제조방법 |
| JP6054834B2 (ja) * | 2013-10-01 | 2016-12-27 | 日本電信電話株式会社 | ナノワイヤの作製方法 |
| US20190018041A1 (en) * | 2013-11-06 | 2019-01-17 | Yeda Research And Development Co. Ltd. | Nanotube based transistor structure, method of fabrication and uses thereof |
| US9954125B2 (en) * | 2013-11-12 | 2018-04-24 | Forwarding Technology Ltd | Light spot position detector with an array of nanorods |
| RU2569050C2 (ru) * | 2013-12-10 | 2015-11-20 | Общество с ограниченной ответственностью "Гарант" (ООО "Гарант") | Решетка дипольных нанолазеров |
| US9725310B2 (en) | 2013-12-20 | 2017-08-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Micro electromechanical system sensor and method of forming the same |
| US20150187889A1 (en) * | 2013-12-27 | 2015-07-02 | University Of Rochester | Surface-controlled semiconductor nano-devices, methods and applications |
| EP3123532B1 (en) | 2014-03-25 | 2018-11-21 | Matrix Industries, Inc. | Thermoelectric devices and systems |
| WO2015157501A1 (en) | 2014-04-10 | 2015-10-15 | Alphabet Energy, Inc. | Ultra-long silicon nanostructures, and methods of forming and transferring the same |
| US11438973B2 (en) | 2014-04-10 | 2022-09-06 | Metis Design Corporation | Multifunctional assemblies |
| JP2015210348A (ja) * | 2014-04-25 | 2015-11-24 | 株式会社日立エルジーデータストレージ | 光源モジュールおよび映像投射装置 |
| US10435817B2 (en) | 2014-05-07 | 2019-10-08 | President And Fellows Of Harvard College | Controlled growth of nanoscale wires |
| CN106459238B (zh) * | 2014-05-27 | 2018-11-13 | 富士胶片株式会社 | 遮光性组合物 |
| US10067006B2 (en) | 2014-06-19 | 2018-09-04 | Elwha Llc | Nanostructure sensors and sensing systems |
| PL3194070T3 (pl) | 2014-09-17 | 2021-06-14 | Lummus Technology Llc | Katalizatory do utleniającego sprzęgania metanu i utleniającego odwodornienia etanu |
| CN104332405B (zh) * | 2014-09-19 | 2017-02-15 | 中国科学院上海微系统与信息技术研究所 | 一种锗纳米线场效应晶体管及其制备方法 |
| US10285220B2 (en) | 2014-10-24 | 2019-05-07 | Elwha Llc | Nanostructure heaters and heating systems and methods of fabricating the same |
| US10785832B2 (en) | 2014-10-31 | 2020-09-22 | Elwha Llc | Systems and methods for selective sensing and selective thermal heating using nanostructures |
| WO2016077804A1 (en) * | 2014-11-13 | 2016-05-19 | Neem Scientific, Inc. | Large scale, low cost nanosensor, nano-needle, and nanopump arrays |
| CN107210319B (zh) * | 2014-11-13 | 2021-10-08 | 丽盟科技有限公司 | 大规模低成本纳米传感器、纳米针和纳米泵阵列 |
| US9263260B1 (en) * | 2014-12-16 | 2016-02-16 | International Business Machines Corporation | Nanowire field effect transistor with inner and outer gates |
| US9379327B1 (en) | 2014-12-16 | 2016-06-28 | Carbonics Inc. | Photolithography based fabrication of 3D structures |
| DE102014018878B8 (de) * | 2014-12-17 | 2017-11-16 | Technische Universität Darmstadt | Federsensorelement |
| JP6637505B2 (ja) * | 2014-12-29 | 2020-01-29 | ジョージア テック リサーチ コーポレイション | 機能性ナノ構造体を連続して大規模に製造する方法 |
| CN105810730B (zh) * | 2014-12-29 | 2018-12-07 | 中芯国际集成电路制造(上海)有限公司 | 半导体装置及其制造方法 |
| KR101682024B1 (ko) * | 2015-01-26 | 2016-12-12 | 덕산하이메탈(주) | 메탈 나노와이어 및 이의 합성방법과 이를 통해 제조된 메탈 나노와이어를 포함하는 투광성 전극 및 유기발광소자 |
| US9954251B2 (en) * | 2015-02-17 | 2018-04-24 | Wildcat Discovery Technologies, Inc | Electrolyte formulations for electrochemical cells containing a silicon electrode |
| US10088697B2 (en) * | 2015-03-12 | 2018-10-02 | International Business Machines Corporation | Dual-use electro-optic and thermo-optic modulator |
| US10290767B2 (en) * | 2015-06-09 | 2019-05-14 | The Royal Institution For The Advancement Of Learning/Mcgill University | High efficiency visible and ultraviolet nanowire emitters |
| CA2992154A1 (en) | 2015-07-13 | 2017-01-19 | Crayonano As | Nanowires/nanopyramids shaped light emitting diodes and photodetectors |
| CA2992156A1 (en) | 2015-07-13 | 2017-01-16 | Crayonano As | Nanowires or nanopyramids grown on graphitic substrate |
| US10368788B2 (en) | 2015-07-23 | 2019-08-06 | California Institute Of Technology | System and methods for wireless drug delivery on command |
| US10714337B2 (en) | 2015-07-31 | 2020-07-14 | Crayonano As | Process for growing nanowires or nanopyramids on graphitic substrates |
| US9558942B1 (en) * | 2015-09-29 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | High density nanowire array |
| GB2543790A (en) * | 2015-10-28 | 2017-05-03 | Sustainable Engine Systems Ltd | Pin fin heat exchanger |
| US10109477B2 (en) * | 2015-12-31 | 2018-10-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method |
| JP6334076B2 (ja) * | 2016-03-14 | 2018-05-30 | ユニチカ株式会社 | ナノワイヤーおよびその製造方法、ナノワイヤー分散液ならびに透明導電膜 |
| CN108885273B (zh) * | 2016-03-23 | 2023-09-08 | 皇家飞利浦有限公司 | 具有整体像素边界的纳米材料成像探测器 |
| ITUA20162918A1 (it) * | 2016-04-27 | 2017-10-27 | Univ Degli Studi Di Milano Bicocca | Concentratore solare luminescente ad ampia area a base di nanocristalli semiconduttori a gap energetico indiretto |
| TW201809931A (zh) | 2016-05-03 | 2018-03-16 | 麥崔克斯工業股份有限公司 | 熱電裝置及系統 |
| ES3032418T3 (en) | 2016-07-15 | 2025-07-18 | Oned Mat Inc | Manufacturing apparatus and method for making silicon nanowires on carbon based powders for use in batteries |
| EP3509115B1 (en) * | 2016-08-31 | 2024-09-11 | Nissan Motor Co., Ltd. | Photovoltaic device |
| USD819627S1 (en) | 2016-11-11 | 2018-06-05 | Matrix Industries, Inc. | Thermoelectric smartwatch |
| US10782014B2 (en) | 2016-11-11 | 2020-09-22 | Habib Technologies LLC | Plasmonic energy conversion device for vapor generation |
| FR3061607B1 (fr) * | 2016-12-29 | 2019-05-31 | Aledia | Dispositif optoelectronique a diodes electroluminescentes |
| US20180198050A1 (en) * | 2017-01-11 | 2018-07-12 | Swansea University | Energy harvesting device |
| GB201705755D0 (en) | 2017-04-10 | 2017-05-24 | Norwegian Univ Of Science And Tech (Ntnu) | Nanostructure |
| KR101922112B1 (ko) * | 2017-10-30 | 2018-11-27 | 주식회사 레신저스 | 광배선 및 이의 제조방법 |
| US11226162B2 (en) * | 2018-04-19 | 2022-01-18 | Intel Corporation | Heat dissipation device having anisotropic thermally conductive sections and isotropic thermally conductive sections |
| TWI692117B (zh) * | 2018-05-04 | 2020-04-21 | 台灣創界有限公司 | 微米led磊晶之直立筒柱形反應腔體及線性發光體之製程 |
| CN108711591B (zh) * | 2018-05-22 | 2019-10-01 | 京东方科技集团股份有限公司 | 一种显示器件及其制备方法、显示装置 |
| US11728163B2 (en) * | 2018-07-06 | 2023-08-15 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing metal oxynitride film |
| JP7438203B2 (ja) * | 2018-09-28 | 2024-02-26 | ウェスタン ニュー イングランド ユニバーシティ | 小さい粒子および細いワイヤを生成し、カプセル化するための装置および方法 |
| EP3856419A4 (en) * | 2018-09-28 | 2022-06-29 | Western New England University | Apparatus and method for production and encapsulation of small particles and thin wires |
| KR102844908B1 (ko) * | 2018-10-18 | 2025-08-11 | 조지아 테크 리서치 코포레이션 | 나노구조체를 제조하기 위한 화학적 에칭 방법 |
| US11165007B2 (en) * | 2019-01-25 | 2021-11-02 | King Abdulaziz University | Thermoelectric module composed of SnO and SnO2 nanostructures |
| AU2020215051A1 (en) | 2019-01-30 | 2021-07-22 | Lummus Technology Llc | Catalysts for oxidative coupling of methane |
| CN110038548A (zh) * | 2019-05-10 | 2019-07-23 | 上海纳米技术及应用国家工程研究中心有限公司 | 一种n-p-n型三明治异质结纳米材料的制备方法及其产品和应用 |
| GB201913701D0 (en) | 2019-09-23 | 2019-11-06 | Crayonano As | Composition of matter |
| KR102285099B1 (ko) | 2020-01-08 | 2021-08-04 | 주식회사 에스앤에스텍 | 극자외선용 반사형 블랭크 마스크 및 포토마스크 |
| US11695100B2 (en) | 2020-01-21 | 2023-07-04 | Nanosys, Inc. | Light emitting diode containing a grating and methods of making the same |
| US11600478B2 (en) | 2020-02-05 | 2023-03-07 | Uchicago Argonne, Llc | Thermionic converter and methods of making and using same |
| CN111362254B (zh) * | 2020-03-17 | 2022-07-05 | 广西师范大学 | 一种氮掺杂碳纳米管负载磷掺杂四氧化三钴复合材料的制备方法及应用 |
| CN111613968B (zh) * | 2020-04-30 | 2022-04-08 | 南京航空航天大学 | 一种实现ZnO微米线EHP激光的方法 |
| CN115968414A (zh) * | 2020-08-17 | 2023-04-14 | 新加坡国立大学 | 高度定向的单晶低维纳米结构、制造方法及器件 |
| CN114686207A (zh) * | 2020-12-31 | 2022-07-01 | Tcl科技集团股份有限公司 | 核壳量子点及其制备方法 |
| CN112838138B (zh) * | 2020-12-31 | 2023-04-07 | 杭州电子科技大学 | 一种柔性触敏元件及制备方法 |
| TWI768872B (zh) * | 2021-05-06 | 2022-06-21 | 力晶積成電子製造股份有限公司 | 單光子發光元件與發光裝置 |
| US20230226254A1 (en) * | 2022-01-18 | 2023-07-20 | City University Of Hong Kong | Medical implant with controllable electro-mechanical interactions at a material/bacteria interface |
| KR102781967B1 (ko) * | 2022-01-28 | 2025-03-18 | 삼성전자주식회사 | 캐패시터 와이어 및 이를 포함하는 전자장치 |
| KR102814531B1 (ko) | 2022-10-04 | 2025-05-28 | 연세대학교 산학협력단 | 단일 원자 치환을 통한 양자 터널링 기반으로 전자적 또는 광학적으로 동작하는 분자 소자 |
| WO2024077392A1 (en) * | 2022-10-13 | 2024-04-18 | École De Technologie Supérieure | Composite nanowires as well as transducers and transistors based thereon |
| CN115537916B (zh) * | 2022-10-13 | 2024-07-16 | 上海理工大学 | 一种iv族直接带隙半导体超晶格材料及其应用 |
| CN120253878A (zh) * | 2025-04-14 | 2025-07-04 | 深圳市明昌光电科技有限公司 | 一种led显示屏缺陷快速检测方法 |
Family Cites Families (52)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3493431A (en) | 1966-11-25 | 1970-02-03 | Bell Telephone Labor Inc | Vapor-liquid-solid crystal growth technique |
| US3580732A (en) | 1968-01-15 | 1971-05-25 | Ibm | Method of growing single crystals |
| NL6805300A (enExample) | 1968-04-13 | 1969-10-15 | ||
| DE2639841C3 (de) | 1976-09-03 | 1980-10-23 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Solarzelle und Verfahren zu ihrer Herstellung |
| JPH0488628A (ja) * | 1990-07-31 | 1992-03-23 | Mitsubishi Electric Corp | 半導体装置の作製方法 |
| US5332910A (en) | 1991-03-22 | 1994-07-26 | Hitachi, Ltd. | Semiconductor optical device with nanowhiskers |
| JPH0585899A (ja) | 1991-10-01 | 1993-04-06 | Nippon Telegr & Teleph Corp <Ntt> | 針状単結晶の作製法 |
| JPH0595121A (ja) | 1991-10-01 | 1993-04-16 | Nippon Telegr & Teleph Corp <Ntt> | 量子細線構造およびその作製方法 |
| JP3243303B2 (ja) * | 1991-10-28 | 2002-01-07 | ゼロックス・コーポレーション | 量子閉じ込め半導体発光素子及びその製造方法 |
| DE69228524T2 (de) | 1991-12-24 | 1999-10-28 | Hitachi, Ltd. | Atomare Vorrichtungen und atomare logische Schaltungen |
| JPH05215509A (ja) | 1992-02-03 | 1993-08-24 | Hitachi Ltd | 走査型プローブ顕微鏡とその探針製造方法 |
| JP2697474B2 (ja) | 1992-04-30 | 1998-01-14 | 松下電器産業株式会社 | 微細構造の製造方法 |
| JP2821061B2 (ja) | 1992-05-22 | 1998-11-05 | 電気化学工業株式会社 | 単結晶の製造方法 |
| US5260957A (en) | 1992-10-29 | 1993-11-09 | The Charles Stark Draper Laboratory, Inc. | Quantum dot Laser |
| US5357119A (en) * | 1993-02-19 | 1994-10-18 | Board Of Regents Of The University Of California | Field effect devices having short period superlattice structures using Si and Ge |
| JPH06271306A (ja) * | 1993-03-17 | 1994-09-27 | Nec Corp | 数珠状高分子とその構成方法 |
| JPH07109881B2 (ja) * | 1993-03-22 | 1995-11-22 | 株式会社日立製作所 | 量子細線導波路 |
| US6462578B2 (en) * | 1993-08-03 | 2002-10-08 | Btr, Inc. | Architecture and interconnect scheme for programmable logic circuits |
| US5363394A (en) * | 1993-08-06 | 1994-11-08 | At&T Bell Laboratories | Quantum wire laser |
| US5962863A (en) * | 1993-09-09 | 1999-10-05 | The United States Of America As Represented By The Secretary Of The Navy | Laterally disposed nanostructures of silicon on an insulating substrate |
| US6093941A (en) * | 1993-09-09 | 2000-07-25 | The United States Of America As Represented By The Secretary Of The Navy | Photonic silicon on a transparent substrate |
| JPH07144999A (ja) | 1993-11-22 | 1995-06-06 | Denki Kagaku Kogyo Kk | 針状単結晶体及びその製法 |
| JPH07183485A (ja) | 1993-12-22 | 1995-07-21 | Denki Kagaku Kogyo Kk | 量子細線装置及び製造方法 |
| JPH07272651A (ja) | 1994-03-31 | 1995-10-20 | Mitsubishi Electric Corp | 針状結晶構造とその製造方法 |
| WO1996010282A1 (en) * | 1994-09-29 | 1996-04-04 | British Telecommunications Public Limited Company | Optical fibre with quantum dots |
| US6231980B1 (en) * | 1995-02-14 | 2001-05-15 | The Regents Of The University Of California | BX CY NZ nanotubes and nanoparticles |
| US5709943A (en) | 1995-05-04 | 1998-01-20 | Minnesota Mining And Manufacturing Company | Biological adsorption supports |
| WO1997019208A1 (en) * | 1995-11-22 | 1997-05-29 | Northwestern University | Method of encapsulating a material in a carbon nanotube |
| US5807876A (en) | 1996-04-23 | 1998-09-15 | Vertex Pharmaceuticals Incorporated | Inhibitors of IMPDH enzyme |
| JPH09288115A (ja) | 1996-04-24 | 1997-11-04 | Nippon Telegr & Teleph Corp <Ntt> | 先鋭探針の製造方法およびその装置 |
| JPH10106960A (ja) * | 1996-09-25 | 1998-04-24 | Sony Corp | 量子細線の製造方法 |
| JP4032264B2 (ja) | 1997-03-21 | 2008-01-16 | ソニー株式会社 | 量子細線を有する素子の製造方法 |
| JP3858319B2 (ja) * | 1996-12-05 | 2006-12-13 | ソニー株式会社 | 量子細線の製造方法 |
| US5976957A (en) * | 1996-10-28 | 1999-11-02 | Sony Corporation | Method of making silicon quantum wires on a substrate |
| US6683783B1 (en) * | 1997-03-07 | 2004-01-27 | William Marsh Rice University | Carbon fibers formed from single-wall carbon nanotubes |
| US6359288B1 (en) | 1997-04-24 | 2002-03-19 | Massachusetts Institute Of Technology | Nanowire arrays |
| US7112315B2 (en) * | 1999-04-14 | 2006-09-26 | The Regents Of The University Of California | Molecular nanowires from single walled carbon nanotubes |
| US6361861B2 (en) | 1999-06-14 | 2002-03-26 | Battelle Memorial Institute | Carbon nanotubes on a substrate |
| US6308736B1 (en) | 1999-07-01 | 2001-10-30 | Automotive Fluid Systems, Inc. | Tube-to-vessel connection using a fastening valve |
| DE19951207A1 (de) * | 1999-10-15 | 2001-04-19 | Twlux Halbleitertechnologien B | Halbleiterbauelement |
| US6741019B1 (en) | 1999-10-18 | 2004-05-25 | Agere Systems, Inc. | Article comprising aligned nanowires |
| US6597496B1 (en) * | 1999-10-25 | 2003-07-22 | The Board Of Trustees Of The University Of Illinois | Silicon nanoparticle stimulated emission devices |
| US6539156B1 (en) * | 1999-11-02 | 2003-03-25 | Georgia Tech Research Corporation | Apparatus and method of optical transfer and control in plasmon supporting metal nanostructures |
| US6248674B1 (en) | 2000-02-02 | 2001-06-19 | Hewlett-Packard Company | Method of aligning nanowires |
| US6306736B1 (en) | 2000-02-04 | 2001-10-23 | The Regents Of The University Of California | Process for forming shaped group III-V semiconductor nanocrystals, and product formed using process |
| US6225198B1 (en) | 2000-02-04 | 2001-05-01 | The Regents Of The University Of California | Process for forming shaped group II-VI semiconductor nanocrystals, and product formed using process |
| US7301199B2 (en) * | 2000-08-22 | 2007-11-27 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| US20060175601A1 (en) * | 2000-08-22 | 2006-08-10 | President And Fellows Of Harvard College | Nanoscale wires and related devices |
| WO2002017362A2 (en) | 2000-08-22 | 2002-02-28 | President And Fellows Of Harvard College | Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| EP1342075B1 (en) * | 2000-12-11 | 2008-09-10 | President And Fellows Of Harvard College | Device contaning nanosensors for detecting an analyte and its method of manufacture |
| US6423583B1 (en) * | 2001-01-03 | 2002-07-23 | International Business Machines Corporation | Methodology for electrically induced selective breakdown of nanotubes |
| KR101008294B1 (ko) * | 2001-03-30 | 2011-01-13 | 더 리전트 오브 더 유니버시티 오브 캘리포니아 | 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 |
-
2002
- 2002-03-29 KR KR1020097023682A patent/KR101008294B1/ko not_active Expired - Fee Related
- 2002-03-29 JP JP2002578579A patent/JP2004532133A/ja active Pending
- 2002-03-29 CN CNB028096010A patent/CN1306619C/zh not_active Expired - Fee Related
- 2002-03-29 AU AU2002307008A patent/AU2002307008C1/en not_active Ceased
- 2002-03-29 EP EP02757706A patent/EP1374309A1/en not_active Ceased
- 2002-03-29 CA CA2442985A patent/CA2442985C/en not_active Expired - Fee Related
- 2002-03-29 US US10/112,578 patent/US6882051B2/en not_active Expired - Lifetime
- 2002-03-29 EP EP20100012530 patent/EP2273552A3/en not_active Withdrawn
- 2002-03-29 KR KR10-2003-7012856A patent/KR20040000418A/ko not_active Ceased
- 2002-03-29 US US10/112,698 patent/US6996147B2/en not_active Expired - Lifetime
- 2002-03-29 WO PCT/US2002/010002 patent/WO2002080280A1/en not_active Ceased
- 2002-03-29 TW TW91106432A patent/TW554388B/zh not_active IP Right Cessation
- 2002-03-29 MX MXPA03008935A patent/MXPA03008935A/es active IP Right Grant
-
2005
- 2005-01-20 US US11/040,664 patent/US7569847B2/en not_active Expired - Fee Related
-
2006
- 2006-12-22 US US11/645,241 patent/US7569941B2/en not_active Expired - Fee Related
- 2006-12-22 US US11/645,236 patent/US7834264B2/en not_active Expired - Fee Related
-
2009
- 2009-06-19 US US12/488,310 patent/US9881999B2/en not_active Expired - Fee Related
- 2009-08-10 JP JP2009186139A patent/JP2009269170A/ja active Pending
-
2010
- 2010-02-19 JP JP2010035259A patent/JP2010167560A/ja active Pending
- 2010-11-12 JP JP2010253763A patent/JP2011093090A/ja active Pending
Non-Patent Citations (2)
| Title |
|---|
| Nature, vol.399, pp. 48-51 (1999.5.6.)* |
| Sicence,vol.281,pp.973-975(1998.8.14.)* |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8885238B2 (en) | 2011-10-11 | 2014-11-11 | Samsung Electronics Co., Ltd. | Light position controlling apparatus and method of manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| EP1374309A1 (en) | 2004-01-02 |
| US20020172820A1 (en) | 2002-11-21 |
| CN1306619C (zh) | 2007-03-21 |
| JP2009269170A (ja) | 2009-11-19 |
| JP2011093090A (ja) | 2011-05-12 |
| KR20090127194A (ko) | 2009-12-09 |
| AU2002307008B2 (en) | 2008-04-24 |
| AU2002307008C1 (en) | 2008-10-30 |
| US20070164270A1 (en) | 2007-07-19 |
| US7569941B2 (en) | 2009-08-04 |
| US6996147B2 (en) | 2006-02-07 |
| MXPA03008935A (es) | 2004-06-30 |
| EP2273552A2 (en) | 2011-01-12 |
| US9881999B2 (en) | 2018-01-30 |
| CA2442985C (en) | 2016-05-31 |
| WO2002080280A1 (en) | 2002-10-10 |
| TW554388B (en) | 2003-09-21 |
| US20050161662A1 (en) | 2005-07-28 |
| US6882051B2 (en) | 2005-04-19 |
| US20080092938A1 (en) | 2008-04-24 |
| KR20040000418A (ko) | 2004-01-03 |
| EP2273552A3 (en) | 2013-04-10 |
| JP2010167560A (ja) | 2010-08-05 |
| CA2442985A1 (en) | 2002-10-10 |
| US7834264B2 (en) | 2010-11-16 |
| US20020175408A1 (en) | 2002-11-28 |
| US7569847B2 (en) | 2009-08-04 |
| US20100003516A1 (en) | 2010-01-07 |
| CN1507661A (zh) | 2004-06-23 |
| JP2004532133A (ja) | 2004-10-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101008294B1 (ko) | 나노구조체 및 나노와이어의 제조 방법 및 그로부터 제조되는 디바이스 | |
| CN101009214B (zh) | 纳米结构和纳米线的制造方法及由其制造的器件 | |
| AU2002307008A1 (en) | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom | |
| Chen et al. | Thermoelectrics of nanowires | |
| KR101147053B1 (ko) | 나노구조체 및 그 제조 방법 | |
| AU2008200507B2 (en) | Methods of fabricating nanostructures and nanowires and devices fabricated therefrom | |
| Shakouri et al. | Majumdar et al. | |
| YAN et al. | Semiconductor nanowires: functional building blocks for nanotechnology | |
| Yan | Controlled growth of semiconductor nanostructures and their optical and electrical properties | |
| Wu | Fabrication and optical properties of erbium-doped group IV nanowires and their corresponding oxides | |
| Pchelyakov et al. | Nanotechnologies in semiconductor electronics | |
| YAN et al. | Department of Chemistry, University of California, Berkeley, California 94720 | |
| HK1135798B (en) | Nanostructures and methods for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A107 | Divisional application of patent | ||
| A201 | Request for examination | ||
| PA0104 | Divisional application for international application |
St.27 status event code: A-0-1-A10-A16-div-PA0104 St.27 status event code: A-0-1-A10-A18-div-PA0104 |
|
| PA0201 | Request for examination |
St.27 status event code: A-1-2-D10-D11-exm-PA0201 |
|
| PG1501 | Laying open of application |
St.27 status event code: A-1-1-Q10-Q12-nap-PG1501 |
|
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
St.27 status event code: A-1-2-D10-D21-exm-PE0902 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| T11-X000 | Administrative time limit extension requested |
St.27 status event code: U-3-3-T10-T11-oth-X000 |
|
| P11-X000 | Amendment of application requested |
St.27 status event code: A-2-2-P10-P11-nap-X000 |
|
| P13-X000 | Application amended |
St.27 status event code: A-2-2-P10-P13-nap-X000 |
|
| E701 | Decision to grant or registration of patent right | ||
| PE0701 | Decision of registration |
St.27 status event code: A-1-2-D10-D22-exm-PE0701 |
|
| GRNT | Written decision to grant | ||
| PR0701 | Registration of establishment |
St.27 status event code: A-2-4-F10-F11-exm-PR0701 |
|
| PR1002 | Payment of registration fee |
Fee payment year number: 1 St.27 status event code: A-2-2-U10-U12-oth-PR1002 |
|
| PG1601 | Publication of registration |
St.27 status event code: A-4-4-Q10-Q13-nap-PG1601 |
|
| FPAY | Annual fee payment |
Payment date: 20131224 Year of fee payment: 4 |
|
| PR1001 | Payment of annual fee |
Fee payment year number: 4 St.27 status event code: A-4-4-U10-U11-oth-PR1001 |
|
| FPAY | Annual fee payment |
Payment date: 20141222 Year of fee payment: 5 |
|
| PR1001 | Payment of annual fee |
Fee payment year number: 5 St.27 status event code: A-4-4-U10-U11-oth-PR1001 |
|
| FPAY | Annual fee payment |
Payment date: 20151224 Year of fee payment: 6 |
|
| PR1001 | Payment of annual fee |
Fee payment year number: 6 St.27 status event code: A-4-4-U10-U11-oth-PR1001 |
|
| FPAY | Annual fee payment |
Payment date: 20161229 Year of fee payment: 7 |
|
| PR1001 | Payment of annual fee |
Fee payment year number: 7 St.27 status event code: A-4-4-U10-U11-oth-PR1001 |
|
| FPAY | Annual fee payment |
Payment date: 20171227 Year of fee payment: 8 |
|
| PR1001 | Payment of annual fee |
Fee payment year number: 8 St.27 status event code: A-4-4-U10-U11-oth-PR1001 |
|
| PR1001 | Payment of annual fee |
Fee payment year number: 9 St.27 status event code: A-4-4-U10-U11-oth-PR1001 |
|
| PC1903 | Unpaid annual fee |
Not in force date: 20200108 Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE St.27 status event code: A-4-4-U10-U13-oth-PC1903 |
|
| PC1903 | Unpaid annual fee |
Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20200108 St.27 status event code: N-4-6-H10-H13-oth-PC1903 |
|
| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |
|
| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |