DE69228524T2 - Atomare Vorrichtungen und atomare logische Schaltungen - Google Patents

Atomare Vorrichtungen und atomare logische Schaltungen

Info

Publication number
DE69228524T2
DE69228524T2 DE1992628524 DE69228524T DE69228524T2 DE 69228524 T2 DE69228524 T2 DE 69228524T2 DE 1992628524 DE1992628524 DE 1992628524 DE 69228524 T DE69228524 T DE 69228524T DE 69228524 T2 DE69228524 T2 DE 69228524T2
Authority
DE
Germany
Prior art keywords
atomic
devices
logic circuits
circuits
atomic logic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1992628524
Other languages
English (en)
Other versions
DE69228524D1 (de
Inventor
Yasuo Wada
Seiichi Kondo Seiichi Kondo
Tsuyoshi Uda
Masukazu Igarashi
Hiroshi Kajiyama
Hisashi Nagano
Akito Sakurai
Tsuneo Ichiguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP34064991A external-priority patent/JP2827641B2/ja
Priority claimed from JP34435791A external-priority patent/JP3201803B2/ja
Priority claimed from JP2097292A external-priority patent/JPH05217933A/ja
Priority claimed from JP25251192A external-priority patent/JP3247734B2/ja
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of DE69228524D1 publication Critical patent/DE69228524D1/de
Publication of DE69228524T2 publication Critical patent/DE69228524T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
    • G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
    • G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
    • G11B9/1463—Record carriers for recording or reproduction involving the use of microscopic probe means
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/54—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes
    • H03K17/545—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes using microengineered devices, e.g. field emission devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Devices based on quantum mechanical effects, e.g. quantum interference devices or metal single-electron transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/02—Structural aspects of erasable programmable read-only memories
    • G11C2216/08—Nonvolatile memory wherein data storage is accomplished by storing relatively few electrons in the storage layer, i.e. single electron memory
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Computing Systems (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Theoretical Computer Science (AREA)
  • Logic Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE1992628524 1991-12-24 1992-12-22 Atomare Vorrichtungen und atomare logische Schaltungen Expired - Fee Related DE69228524T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP34064991A JP2827641B2 (ja) 1991-12-24 1991-12-24 原子スイッチ
JP34435791A JP3201803B2 (ja) 1991-12-26 1991-12-26 原子細線電界効果スイッチングデバイス
JP2097292A JPH05217933A (ja) 1992-02-06 1992-02-06 表面構造構成法
JP25251192A JP3247734B2 (ja) 1992-09-22 1992-09-22 原子細線による論理回路

Publications (2)

Publication Number Publication Date
DE69228524D1 DE69228524D1 (de) 1999-04-08
DE69228524T2 true DE69228524T2 (de) 1999-10-28

Family

ID=27457489

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1992628524 Expired - Fee Related DE69228524T2 (de) 1991-12-24 1992-12-22 Atomare Vorrichtungen und atomare logische Schaltungen

Country Status (3)

Country Link
US (1) US5561300A (de)
EP (1) EP0548905B1 (de)
DE (1) DE69228524T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3697730B2 (ja) * 1994-11-04 2005-09-21 ソニー株式会社 電荷移動素子およびその動作方法
US6331454B1 (en) 1994-11-08 2001-12-18 Board Of Regents Of The Leland Stanford Junior University Atomic-level electronic network and method of fabrication
US5981316A (en) * 1994-11-08 1999-11-09 The Board Of Trustees Of The Leland Stanford Junior University Method of fabrication of atomic chain circuit network
JPH1065145A (ja) * 1996-08-22 1998-03-06 Hitachi Ltd 電導性原子サイズ細線および原子サイズスイッチ
US6299990B1 (en) * 1996-12-18 2001-10-09 Hitachi, Ltd. Ferromagnetic material and magnetic apparatus employing the ferromagnetic material
US5968677A (en) * 1996-12-18 1999-10-19 Hitachi, Ltd. Ferromagnetic material and magnetic apparatus employing the ferromagnetic material
JPH1126233A (ja) 1997-07-08 1999-01-29 Hitachi Ltd 強磁性体、磁気抵抗効果素子、および原子レベル素子
US7260051B1 (en) 1998-12-18 2007-08-21 Nanochip, Inc. Molecular memory medium and molecular memory integrated circuit
US6664559B1 (en) * 2000-02-23 2003-12-16 Semiconductor Research Corporation Supermolecular structures and devices made from same
EP1331671B1 (de) * 2000-11-01 2007-01-24 Japan Science and Technology Agency Punktkontaktmatrix und elektronische Schaltung damit
CA2442985C (en) 2001-03-30 2016-05-31 The Regents Of The University Of California Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
US20040150472A1 (en) * 2002-10-15 2004-08-05 Rust Thomas F. Fault tolerant micro-electro mechanical actuators
US6985377B2 (en) 2002-10-15 2006-01-10 Nanochip, Inc. Phase change media for high density data storage
US6982898B2 (en) * 2002-10-15 2006-01-03 Nanochip, Inc. Molecular memory integrated circuit utilizing non-vibrating cantilevers
US7233517B2 (en) 2002-10-15 2007-06-19 Nanochip, Inc. Atomic probes and media for high density data storage
US7301887B2 (en) 2004-04-16 2007-11-27 Nanochip, Inc. Methods for erasing bit cells in a high density data storage device
US20050232061A1 (en) 2004-04-16 2005-10-20 Rust Thomas F Systems for writing and reading highly resolved domains for high density data storage
US7379412B2 (en) 2004-04-16 2008-05-27 Nanochip, Inc. Methods for writing and reading highly resolved domains for high density data storage
WO2016193361A1 (en) 2015-06-04 2016-12-08 Eth Zurich Devices, in particular optical or electro-optical devices with quantized operation
US20180254325A1 (en) * 2017-03-02 2018-09-06 Board Of Trustees Of The University Of Arkansas Growth of Single Atom Chains for Nano-Electronics and Quantum Circuits
CN114421943B (zh) * 2022-01-25 2023-03-24 中国电子科技集团公司第五十八研究所 一种高可靠抗辐射原子开关型配置单元结构

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63478A (ja) * 1986-06-19 1988-01-05 Sanyo Electric Co Ltd 薄膜形成方法
US4761548A (en) * 1986-12-18 1988-08-02 Northrop Corporation Optically triggered high voltage switch with cesium vapor
US5144148A (en) * 1989-11-07 1992-09-01 International Business Machines Corporation Process for repositioning atoms on a surface using a scanning tunneling microscope
US5341328A (en) * 1991-01-18 1994-08-23 Energy Conversion Devices, Inc. Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
US5166919A (en) * 1991-07-11 1992-11-24 International Business Machines Corporation Atomic scale electronic switch
JP2827641B2 (ja) * 1991-12-24 1998-11-25 株式会社日立製作所 原子スイッチ
JP3201803B2 (ja) * 1991-12-26 2001-08-27 株式会社日立製作所 原子細線電界効果スイッチングデバイス
US5252835A (en) * 1992-07-17 1993-10-12 President And Trustees Of Harvard College Machining oxide thin-films with an atomic force microscope: pattern and object formation on the nanometer scale

Also Published As

Publication number Publication date
EP0548905A3 (en) 1995-09-06
EP0548905B1 (de) 1999-03-03
EP0548905A2 (de) 1993-06-30
DE69228524D1 (de) 1999-04-08
US5561300A (en) 1996-10-01

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