JP5542292B2 - Ｉｉｉ−ｖ族窒化物基板ボウル、並びにｉｉｉ−ｖ族窒化物基板ボウル製造法及び使用法 - Google Patents

Ｉｉｉ−ｖ族窒化物基板ボウル、並びにｉｉｉ−ｖ族窒化物基板ボウル製造法及び使用法 Download PDF

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JP5542292B2
JP5542292B2 JP2001567830A JP2001567830A JP5542292B2 JP 5542292 B2 JP5542292 B2 JP 5542292B2 JP 2001567830 A JP2001567830 A JP 2001567830A JP 2001567830 A JP2001567830 A JP 2001567830A JP 5542292 B2 JP5542292 B2 JP 5542292B2
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boule
growth
seed
wafer
gan
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JP2003527296A (ja
JP2003527296A5 (US20030157376A1-20030821-M00001.png
Inventor
バウド，ロバート，ピー．
フリン，ジェフリー，エス．
ブランデス，ジョージ，アール．
レッドウィング，ジョアン，エム．
ティシュラー，マイケル，エー．
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Wolfspeed Inc
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Cree Inc
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    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
JP2001567830A 2000-03-13 2001-03-12 Ｉｉｉ−ｖ族窒化物基板ボウル、並びにｉｉｉ−ｖ族窒化物基板ボウル製造法及び使用法 Expired - Lifetime JP5542292B2 (ja)

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US09/524,062 2000-03-13
US09/524,062 US6596079B1 (en) 2000-03-13 2000-03-13 III-V nitride substrate boule and method of making and using the same
PCT/US2001/007945 WO2001068955A1 (en) 2000-03-13 2001-03-12 Iii-v nitride substrate boule and method of making and using the same

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JP2011221730A Division JP5670289B2 (ja) 2000-03-13 2011-10-06 （Ａｌ，Ｇａ，Ｉｎ）Ｎブールの製造方法、単結晶、マイクロエレクトロニクス・デバイス構造、（Ａｌ、Ｇａ、Ｉｎ）Ｎブール、ウエハおよび部品
JP2014030490A Division JP2014133695A (ja) 2000-03-13 2014-02-20 Ｉｉｉ−ｖ族窒化物基板ボウル、並びにｉｉｉ−ｖ族窒化物基板ボウル製造法及び使用法

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JP2003527296A JP2003527296A (ja) 2003-09-16
JP2003527296A5 JP2003527296A5 (US20030157376A1-20030821-M00001.png) 2008-04-24
JP5542292B2 true JP5542292B2 (ja) 2014-07-09

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JP2001567830A Expired - Lifetime JP5542292B2 (ja) 2000-03-13 2001-03-12 Ｉｉｉ−ｖ族窒化物基板ボウル、並びにｉｉｉ−ｖ族窒化物基板ボウル製造法及び使用法
JP2011221730A Expired - Lifetime JP5670289B2 (ja) 2000-03-13 2011-10-06 （Ａｌ，Ｇａ，Ｉｎ）Ｎブールの製造方法、単結晶、マイクロエレクトロニクス・デバイス構造、（Ａｌ、Ｇａ、Ｉｎ）Ｎブール、ウエハおよび部品
JP2014030490A Pending JP2014133695A (ja) 2000-03-13 2014-02-20 Ｉｉｉ−ｖ族窒化物基板ボウル、並びにｉｉｉ−ｖ族窒化物基板ボウル製造法及び使用法

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JP2014030490A Pending JP2014133695A (ja) 2000-03-13 2014-02-20 Ｉｉｉ−ｖ族窒化物基板ボウル、並びにｉｉｉ−ｖ族窒化物基板ボウル製造法及び使用法

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