PL2024992T3 - Sposób wygładzania podłoży III-N - Google Patents

Sposób wygładzania podłoży III-N

Info

Publication number
PL2024992T3
PL2024992T3 PL06762845T PL06762845T PL2024992T3 PL 2024992 T3 PL2024992 T3 PL 2024992T3 PL 06762845 T PL06762845 T PL 06762845T PL 06762845 T PL06762845 T PL 06762845T PL 2024992 T3 PL2024992 T3 PL 2024992T3
Authority
PL
Poland
Prior art keywords
smoothing
substrates
iii
smoothing iii
Prior art date
Application number
PL06762845T
Other languages
English (en)
Inventor
Stefan Hölzig
Gunnar Leibiger
Original Assignee
Freiberger Compound Materials Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freiberger Compound Materials Gmbh filed Critical Freiberger Compound Materials Gmbh
Publication of PL2024992T3 publication Critical patent/PL2024992T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
PL06762845T 2006-07-26 2006-07-26 Sposób wygładzania podłoży III-N PL2024992T3 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/EP2006/007413 WO2008011897A1 (de) 2006-07-26 2006-07-26 Verfahren zum glätten von iii-n-substraten

Publications (1)

Publication Number Publication Date
PL2024992T3 true PL2024992T3 (pl) 2017-09-29

Family

ID=37650008

Family Applications (2)

Application Number Title Priority Date Filing Date
PL06762845T PL2024992T3 (pl) 2006-07-26 2006-07-26 Sposób wygładzania podłoży III-N
PL16201978T PL3157045T3 (pl) 2006-07-26 2006-07-26 Wygładzone powierzchnie III-N

Family Applications After (1)

Application Number Title Priority Date Filing Date
PL16201978T PL3157045T3 (pl) 2006-07-26 2006-07-26 Wygładzone powierzchnie III-N

Country Status (6)

Country Link
EP (2) EP2024992B1 (pl)
JP (1) JP5433414B2 (pl)
KR (2) KR101408742B1 (pl)
CN (1) CN101484981B (pl)
PL (2) PL2024992T3 (pl)
WO (1) WO2008011897A1 (pl)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5988480B2 (ja) * 2012-06-05 2016-09-07 株式会社フジクラ 研磨方法
US9312129B2 (en) * 2012-09-05 2016-04-12 Saint-Gobain Cristaux Et Detecteurs Group III-V substrate material with particular crystallographic features and methods of making

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
PL184902B1 (pl) 1997-04-04 2003-01-31 Centrum Badan Wysokocisnieniowych Pan Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N
JPH11135617A (ja) * 1997-10-31 1999-05-21 Nippon Steel Corp 素子分離領域の形成方法
KR100277968B1 (ko) 1998-09-23 2001-03-02 구자홍 질화갈륨 기판 제조방법
JP3525824B2 (ja) 1999-09-17 2004-05-10 日立化成工業株式会社 Ｃｍｐ研磨液
US6596079B1 (en) * 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
JP2002087414A (ja) 2000-09-18 2002-03-27 Mitsuru Shioda テープクロスパッド
JP3840056B2 (ja) * 2001-02-14 2006-11-01 株式会社ノリタケカンパニーリミテド 研磨加工用スラリー
US6488767B1 (en) 2001-06-08 2002-12-03 Advanced Technology Materials, Inc. High surface quality GaN wafer and method of fabricating same
JP2003100373A (ja) 2001-09-21 2003-04-04 Sumitomo Wiring Syst Ltd 端子金具
JP2004027042A (ja) * 2002-06-26 2004-01-29 Yuka Sangyo Kk 微粒子分散ゲル化体及びそれから得られた微粒子分散液
JP4823466B2 (ja) * 2002-12-18 2011-11-24 日本碍子株式会社 エピタキシャル成長用基板および半導体素子
JP4752214B2 (ja) * 2004-08-20 2011-08-17 住友電気工業株式会社 エピタキシャル層形成用ＡｌＮ結晶の表面処理方法
JP5065574B2 (ja) * 2005-01-12 2012-11-07 住友電気工業株式会社 ＧａＮ基板の研磨方法

Also Published As

Publication number Publication date
JP5433414B2 (ja) 2014-03-05
CN101484981A (zh) 2009-07-15
KR101363316B1 (ko) 2014-02-14
EP2024992A1 (de) 2009-02-18
KR101408742B1 (ko) 2014-06-18
KR20090033359A (ko) 2009-04-02
WO2008011897A1 (de) 2008-01-31
KR20130022426A (ko) 2013-03-06
EP2024992B1 (de) 2017-03-01
CN101484981B (zh) 2013-03-27
PL3157045T3 (pl) 2021-12-20
JP2009545144A (ja) 2009-12-17
EP3157045B1 (de) 2021-09-08
EP3157045A1 (de) 2017-04-19

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