FI20075944A0 - Pinnoitusmenetelmä - Google Patents
PinnoitusmenetelmäInfo
- Publication number
- FI20075944A0 FI20075944A0 FI20075944A FI20075944A FI20075944A0 FI 20075944 A0 FI20075944 A0 FI 20075944A0 FI 20075944 A FI20075944 A FI 20075944A FI 20075944 A FI20075944 A FI 20075944A FI 20075944 A0 FI20075944 A0 FI 20075944A0
- Authority
- FI
- Finland
- Prior art keywords
- coating method
- coating
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20075944A FI122749B (fi) | 2007-12-20 | 2007-12-20 | Pinnoitusmenetelmä |
US12/745,330 US20100285205A1 (en) | 2007-12-20 | 2008-12-19 | Coating method |
PCT/FI2008/050769 WO2009080889A1 (en) | 2007-12-20 | 2008-12-19 | Coating method |
CN2008801217668A CN101903564A (zh) | 2007-12-20 | 2008-12-19 | 涂覆方法 |
EA201070735A EA201070735A1 (ru) | 2007-12-20 | 2008-12-19 | Способ покрытия |
EP08865369A EP2222890A4 (en) | 2007-12-20 | 2008-12-19 | COATING PROCESS |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FI20075944 | 2007-12-20 | ||
FI20075944A FI122749B (fi) | 2007-12-20 | 2007-12-20 | Pinnoitusmenetelmä |
Publications (3)
Publication Number | Publication Date |
---|---|
FI20075944A0 true FI20075944A0 (fi) | 2007-12-20 |
FI20075944A FI20075944A (fi) | 2009-06-21 |
FI122749B FI122749B (fi) | 2012-06-29 |
Family
ID=38951639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FI20075944A FI122749B (fi) | 2007-12-20 | 2007-12-20 | Pinnoitusmenetelmä |
Country Status (6)
Country | Link |
---|---|
US (1) | US20100285205A1 (fi) |
EP (1) | EP2222890A4 (fi) |
CN (1) | CN101903564A (fi) |
EA (1) | EA201070735A1 (fi) |
FI (1) | FI122749B (fi) |
WO (1) | WO2009080889A1 (fi) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6640781B2 (ja) * | 2017-03-23 | 2020-02-05 | キオクシア株式会社 | 半導体製造装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE393967B (sv) * | 1974-11-29 | 1977-05-31 | Sateko Oy | Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket |
US5316793A (en) * | 1992-07-27 | 1994-05-31 | Texas Instruments Incorporated | Directed effusive beam atomic layer epitaxy system and method |
KR100408733B1 (ko) * | 2001-02-02 | 2003-12-11 | 주성엔지니어링(주) | 박막 증착 방법 |
KR100731925B1 (ko) * | 2001-06-19 | 2007-06-25 | 학교법인 포항공과대학교 | 퍼지단계를 필요로 하지 않는 원자층 화학증착법 |
US7063981B2 (en) * | 2002-01-30 | 2006-06-20 | Asm International N.V. | Active pulse monitoring in a chemical reactor |
US7153362B2 (en) * | 2002-04-30 | 2006-12-26 | Samsung Electronics Co., Ltd. | System and method for real time deposition process control based on resulting product detection |
US6838114B2 (en) * | 2002-05-24 | 2005-01-04 | Micron Technology, Inc. | Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces |
US6772072B2 (en) * | 2002-07-22 | 2004-08-03 | Applied Materials, Inc. | Method and apparatus for monitoring solid precursor delivery |
US7556690B2 (en) * | 2002-09-27 | 2009-07-07 | Brother Kogyo Kabushiki Kaisha | Nozzle head, nozzle head holder, and droplet jet patterning device |
EP1668682A4 (en) * | 2003-09-30 | 2006-11-15 | Aviza Tech Inc | GROWTH OF DIELECTRICS TO CONSTANT HIGH K BY DEPOSITION OF ATOMIC LAYERS |
US7628860B2 (en) * | 2004-04-12 | 2009-12-08 | Mks Instruments, Inc. | Pulsed mass flow delivery system and method |
US20060107898A1 (en) * | 2004-11-19 | 2006-05-25 | Blomberg Tom E | Method and apparatus for measuring consumption of reactants |
US7459175B2 (en) * | 2005-01-26 | 2008-12-02 | Tokyo Electron Limited | Method for monolayer deposition |
US7608549B2 (en) * | 2005-03-15 | 2009-10-27 | Asm America, Inc. | Method of forming non-conformal layers |
KR100690177B1 (ko) * | 2005-12-14 | 2007-03-08 | 동부일렉트로닉스 주식회사 | 원자층 증착설비 및 이를 이용한 원자층 증착방법 |
US8151814B2 (en) * | 2009-01-13 | 2012-04-10 | Asm Japan K.K. | Method for controlling flow and concentration of liquid precursor |
-
2007
- 2007-12-20 FI FI20075944A patent/FI122749B/fi not_active IP Right Cessation
-
2008
- 2008-12-19 EP EP08865369A patent/EP2222890A4/en not_active Withdrawn
- 2008-12-19 EA EA201070735A patent/EA201070735A1/ru unknown
- 2008-12-19 CN CN2008801217668A patent/CN101903564A/zh active Pending
- 2008-12-19 WO PCT/FI2008/050769 patent/WO2009080889A1/en active Application Filing
- 2008-12-19 US US12/745,330 patent/US20100285205A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
EP2222890A4 (en) | 2010-12-08 |
US20100285205A1 (en) | 2010-11-11 |
EP2222890A1 (en) | 2010-09-01 |
WO2009080889A1 (en) | 2009-07-02 |
CN101903564A (zh) | 2010-12-01 |
FI20075944A (fi) | 2009-06-21 |
FI122749B (fi) | 2012-06-29 |
EA201070735A1 (ru) | 2010-12-30 |
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