FI20075944A0 - Pinnoitusmenetelmä - Google Patents

Pinnoitusmenetelmä

Info

Publication number
FI20075944A0
FI20075944A0 FI20075944A FI20075944A FI20075944A0 FI 20075944 A0 FI20075944 A0 FI 20075944A0 FI 20075944 A FI20075944 A FI 20075944A FI 20075944 A FI20075944 A FI 20075944A FI 20075944 A0 FI20075944 A0 FI 20075944A0
Authority
FI
Finland
Prior art keywords
coating method
coating
Prior art date
Application number
FI20075944A
Other languages
English (en)
Swedish (sv)
Other versions
FI122749B (fi
FI20075944A (fi
Inventor
Pekka Soininen
Sami Sneck
Original Assignee
Beneq Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beneq Oy filed Critical Beneq Oy
Priority to FI20075944A priority Critical patent/FI122749B/fi
Publication of FI20075944A0 publication Critical patent/FI20075944A0/fi
Priority to US12/745,330 priority patent/US20100285205A1/en
Priority to EP08865369A priority patent/EP2222890A4/en
Priority to EA201070735A priority patent/EA201070735A1/ru
Priority to PCT/FI2008/050769 priority patent/WO2009080889A1/en
Priority to CN2008801217668A priority patent/CN101903564A/zh
Publication of FI20075944A publication Critical patent/FI20075944A/fi
Application granted granted Critical
Publication of FI122749B publication Critical patent/FI122749B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
FI20075944A 2007-12-20 2007-12-20 Pinnoitusmenetelmä FI122749B (fi)

Priority Applications (6)

Application Number Priority Date Filing Date Title
FI20075944A FI122749B (fi) 2007-12-20 2007-12-20 Pinnoitusmenetelmä
US12/745,330 US20100285205A1 (en) 2007-12-20 2008-12-19 Coating method
EP08865369A EP2222890A4 (en) 2007-12-20 2008-12-19 COATING PROCESS
EA201070735A EA201070735A1 (ru) 2007-12-20 2008-12-19 Способ покрытия
PCT/FI2008/050769 WO2009080889A1 (en) 2007-12-20 2008-12-19 Coating method
CN2008801217668A CN101903564A (zh) 2007-12-20 2008-12-19 涂覆方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20075944 2007-12-20
FI20075944A FI122749B (fi) 2007-12-20 2007-12-20 Pinnoitusmenetelmä

Publications (3)

Publication Number Publication Date
FI20075944A0 true FI20075944A0 (fi) 2007-12-20
FI20075944A FI20075944A (fi) 2009-06-21
FI122749B FI122749B (fi) 2012-06-29

Family

ID=38951639

Family Applications (1)

Application Number Title Priority Date Filing Date
FI20075944A FI122749B (fi) 2007-12-20 2007-12-20 Pinnoitusmenetelmä

Country Status (6)

Country Link
US (1) US20100285205A1 (fi)
EP (1) EP2222890A4 (fi)
CN (1) CN101903564A (fi)
EA (1) EA201070735A1 (fi)
FI (1) FI122749B (fi)
WO (1) WO2009080889A1 (fi)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6640781B2 (ja) * 2017-03-23 2020-02-05 キオクシア株式会社 半導体製造装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US5316793A (en) * 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
KR100408733B1 (ko) * 2001-02-02 2003-12-11 주성엔지니어링(주) 박막 증착 방법
KR100731925B1 (ko) * 2001-06-19 2007-06-25 학교법인 포항공과대학교 퍼지단계를 필요로 하지 않는 원자층 화학증착법
US7063981B2 (en) * 2002-01-30 2006-06-20 Asm International N.V. Active pulse monitoring in a chemical reactor
US7153362B2 (en) * 2002-04-30 2006-12-26 Samsung Electronics Co., Ltd. System and method for real time deposition process control based on resulting product detection
US6838114B2 (en) * 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6772072B2 (en) * 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US7556690B2 (en) * 2002-09-27 2009-07-07 Brother Kogyo Kabushiki Kaisha Nozzle head, nozzle head holder, and droplet jet patterning device
WO2005034195A2 (en) * 2003-09-30 2005-04-14 Aviza Technology, Inc. Growth of high-k dielectrics by atomic layer deposition
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
US20060107898A1 (en) * 2004-11-19 2006-05-25 Blomberg Tom E Method and apparatus for measuring consumption of reactants
US7459175B2 (en) * 2005-01-26 2008-12-02 Tokyo Electron Limited Method for monolayer deposition
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
KR100690177B1 (ko) * 2005-12-14 2007-03-08 동부일렉트로닉스 주식회사 원자층 증착설비 및 이를 이용한 원자층 증착방법
US8151814B2 (en) * 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor

Also Published As

Publication number Publication date
US20100285205A1 (en) 2010-11-11
CN101903564A (zh) 2010-12-01
WO2009080889A1 (en) 2009-07-02
EP2222890A1 (en) 2010-09-01
EP2222890A4 (en) 2010-12-08
EA201070735A1 (ru) 2010-12-30
FI122749B (fi) 2012-06-29
FI20075944A (fi) 2009-06-21

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