EA201070735A1 - Способ покрытия - Google Patents

Способ покрытия

Info

Publication number
EA201070735A1
EA201070735A1 EA201070735A EA201070735A EA201070735A1 EA 201070735 A1 EA201070735 A1 EA 201070735A1 EA 201070735 A EA201070735 A EA 201070735A EA 201070735 A EA201070735 A EA 201070735A EA 201070735 A1 EA201070735 A1 EA 201070735A1
Authority
EA
Eurasian Patent Office
Prior art keywords
reaction space
pulse
starting materials
amount
fed
Prior art date
Application number
EA201070735A
Other languages
English (en)
Inventor
Пекка Соининен
Сами Снек
Original Assignee
Бенек Ой
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Бенек Ой filed Critical Бенек Ой
Publication of EA201070735A1 publication Critical patent/EA201070735A1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Abstract

Настоящее изобретение относится к способу покрытия и/или легирования поверхности подложки, внутренней поверхности структуры или поверхности другой детали, подлежащим обработке в реакционном пространстве методом послойного атомного осаждения (ALD-метод). В соответствии со способом подлежащую обработке поверхность подложки поочередно подвергают повторяющимся реакциям насыщения поверхности исходными материалами путем подачи последовательных импульсов исходных материалов в реакционное пространство. В соответствии с настоящим изобретением в реакционное пространство подают импульс исходных материалов в заданном количестве; количество/концентрацию исходных материалов и/или продуктов их реакции измеряют в реакционном пространстве в момент импульса и/или после импульса либо непрерывно; количество исходных материалов, подлежащее подаче в реакционное пространство при следующем цикле, определяют в зависимости от результатов измерения, полученных на этапе b); и следующий импульс исходных материалов, количество которых соответствует результатам измерения, полученным на этапе с), подают в реакционное пространство.
EA201070735A 2007-12-20 2008-12-19 Способ покрытия EA201070735A1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20075944A FI122749B (fi) 2007-12-20 2007-12-20 Pinnoitusmenetelmä
PCT/FI2008/050769 WO2009080889A1 (en) 2007-12-20 2008-12-19 Coating method

Publications (1)

Publication Number Publication Date
EA201070735A1 true EA201070735A1 (ru) 2010-12-30

Family

ID=38951639

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201070735A EA201070735A1 (ru) 2007-12-20 2008-12-19 Способ покрытия

Country Status (6)

Country Link
US (1) US20100285205A1 (ru)
EP (1) EP2222890A4 (ru)
CN (1) CN101903564A (ru)
EA (1) EA201070735A1 (ru)
FI (1) FI122749B (ru)
WO (1) WO2009080889A1 (ru)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6640781B2 (ja) * 2017-03-23 2020-02-05 キオクシア株式会社 半導体製造装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) * 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US5316793A (en) * 1992-07-27 1994-05-31 Texas Instruments Incorporated Directed effusive beam atomic layer epitaxy system and method
KR100408733B1 (ko) * 2001-02-02 2003-12-11 주성엔지니어링(주) 박막 증착 방법
KR100731925B1 (ko) * 2001-06-19 2007-06-25 학교법인 포항공과대학교 퍼지단계를 필요로 하지 않는 원자층 화학증착법
US7063981B2 (en) * 2002-01-30 2006-06-20 Asm International N.V. Active pulse monitoring in a chemical reactor
US7153362B2 (en) * 2002-04-30 2006-12-26 Samsung Electronics Co., Ltd. System and method for real time deposition process control based on resulting product detection
US6838114B2 (en) * 2002-05-24 2005-01-04 Micron Technology, Inc. Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces
US6772072B2 (en) * 2002-07-22 2004-08-03 Applied Materials, Inc. Method and apparatus for monitoring solid precursor delivery
US7556690B2 (en) * 2002-09-27 2009-07-07 Brother Kogyo Kabushiki Kaisha Nozzle head, nozzle head holder, and droplet jet patterning device
KR20060100405A (ko) * 2003-09-30 2006-09-20 에비자 테크놀로지, 인크. 원자층 증착에 의한 고-ｋ 유전체의 성장
US7628860B2 (en) * 2004-04-12 2009-12-08 Mks Instruments, Inc. Pulsed mass flow delivery system and method
US20060107898A1 (en) * 2004-11-19 2006-05-25 Blomberg Tom E Method and apparatus for measuring consumption of reactants
US7459175B2 (en) * 2005-01-26 2008-12-02 Tokyo Electron Limited Method for monolayer deposition
US7608549B2 (en) * 2005-03-15 2009-10-27 Asm America, Inc. Method of forming non-conformal layers
KR100690177B1 (ko) * 2005-12-14 2007-03-08 동부일렉트로닉스 주식회사 원자층 증착설비 및 이를 이용한 원자층 증착방법
US8151814B2 (en) * 2009-01-13 2012-04-10 Asm Japan K.K. Method for controlling flow and concentration of liquid precursor

Also Published As

Publication number Publication date
EP2222890A1 (en) 2010-09-01
EP2222890A4 (en) 2010-12-08
WO2009080889A1 (en) 2009-07-02
CN101903564A (zh) 2010-12-01
FI20075944A0 (fi) 2007-12-20
US20100285205A1 (en) 2010-11-11
FI122749B (fi) 2012-06-29
FI20075944A (fi) 2009-06-21

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