JP5433414B2 - Iii−n基板の平滑化方法 - Google Patents
Iii−n基板の平滑化方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 49
- 238000009499 grossing Methods 0.000 title claims description 40
- 238000005498 polishing Methods 0.000 claims description 60
- 239000002245 particle Substances 0.000 claims description 31
- 239000002002 slurry Substances 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- 229910052733 gallium Inorganic materials 0.000 claims description 18
- 229910002601 GaN Inorganic materials 0.000 claims description 15
- 229910052738 indium Inorganic materials 0.000 claims description 14
- 229910052582 BN Inorganic materials 0.000 claims description 13
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 13
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 12
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 11
- 238000013507 mapping Methods 0.000 claims description 11
- 150000001875 compounds Chemical class 0.000 claims description 9
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 8
- 238000007517 polishing process Methods 0.000 claims description 8
- 239000000126 substance Substances 0.000 claims description 8
- 238000001530 Raman microscopy Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000003287 optical effect Effects 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 238000005305 interferometry Methods 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- 230000005693 optoelectronics Effects 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 claims description 2
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 2
- MNKMDLVKGZBOEW-UHFFFAOYSA-M lithium;3,4,5-trihydroxybenzoate Chemical compound [Li+].OC1=CC(C([O-])=O)=CC(O)=C1O MNKMDLVKGZBOEW-UHFFFAOYSA-M 0.000 claims description 2
- 150000007530 organic bases Chemical class 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000000725 suspension Substances 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- 239000013078 crystal Substances 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 18
- 229910003460 diamond Inorganic materials 0.000 description 13
- 239000010432 diamond Substances 0.000 description 13
- 238000005259 measurement Methods 0.000 description 9
- 230000003746 surface roughness Effects 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000004458 analytical method Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000407 epitaxy Methods 0.000 description 4
- 230000005284 excitation Effects 0.000 description 4
- 239000004744 fabric Substances 0.000 description 4
- 238000003841 Raman measurement Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- -1 (Al Chemical class 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000003929 acidic solution Substances 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 230000001143 conditioned effect Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910021385 hard carbon Inorganic materials 0.000 description 1
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000011236 particulate material Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
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- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Description
円形研削(round grinding)
平面部及び/又は切欠き部の研削
ワイヤ切断
エッチングによる丸み付け(etch rounding)
ラップ仕上げ
最後に言及したラップ仕上げ工程を、ラップ仕上げ剤の平均粒径が減少していく複数の連続する部分工程から構成することができる。例えば、炭化シリコン、ダイヤモンド、又は立方晶窒化ホウ素を、ラップ仕上げ剤として使用することができる。
レーザー励起波長532nm(周波数逓倍Nd:YAGレーザー)
励起電力3mW
顕微鏡光学系を用いた、サンプル上へのビーム径1μm以下でのレーザー線の焦点合わせ
Claims (17)
- 平滑化剤を用いて平滑化される表面にIII−N化合物を含み、前記IIIがAl、Ga及びInから選択された周期表のIII族の少なくとも1つの元素を示す材料の表面を平滑化する平滑化方法において、
前記平滑化剤としてスラリーを用いた研磨工程を含み、
前記スラリーは研磨粒子として立方晶窒化ホウ素を含む分散液であって、アンモニア、水酸化カリウム、水酸化ナトリウム、過酸化水素及び有機塩基からなる群から選択された1つ又は複数の物質を含有する水性塩基の懸濁液であり、
研磨工程が複数の工程を含み、
すべての工程で研磨剤として立方晶窒化ホウ素のみが使用され、
連続する各工程ごとに、立方晶窒化ホウ素粒子の平均粒径が小さくなる
ことを特徴とする平滑化方法。 - 請求項1に記載する平滑化方法において、
異種基板、III−N上層及び任意にIII−N又は別の材料で形成された1つ又は複数の中間層を含む自立型III−N基板又はIII−Nテンプレートが、ラップ仕上げ及び/又は研磨される
ことを特徴とする平滑化方法。 - 請求項2に記載する平滑化方法において、
前記異種基板の材料は、サファイア、炭化シリコン、窒化ガリウム、窒化アルミニウム、砒化ガリウム、酸化亜鉛、シリコン、アルミン酸リチウム及び没食子酸リチウムからなる群から選択される
ことを特徴とする平滑化方法。 - 請求項2又は3に記載する平滑化方法において、
正確に配向されたc面、a面、m面若しくはr面、又はc面、a面、m面若しくはr面に対して0.1〜30°の配向方位差を有する面を備えた前記自立型III−N基板の表面が、ラップ仕上げ及び/又は研磨される
ことを特徴とする平滑化方法。 - 請求項2又は3に記載する平滑化方法において、
正確に配向されたIII極c面を備えた表面、又は正確に配向されたIII極c面に対して0.1〜1°の配向方位差を有する面を備えた表面が、ラップ仕上げ及び/又は研磨されることを特徴とする平滑化方法。 - 請求項1に記載する平滑化方法において、
3つの前記連続する各工程における前記平均粒径が、それぞれ4〜7μm超過、2〜4μm未満、及び0.5〜2μm未満である
ことを特徴とする平滑化方法。 - 請求項6に記載する平滑化方法において、
3つの前記連続する各工程における前記平均粒径が、それぞれ約6μm、約3μm、及び約1μmである
ことを特徴とする平滑化方法。 - 請求項1〜7のいずれか一項に記載する平滑化方法において、
ラップ仕上げ工程が、研磨工程の前に実施される
ことを特徴とする平滑化方法。 - 請求項8に記載する平滑化方法において、
ラップ仕上げ剤として立方晶窒化ホウ素が使用される
ことを特徴とする平滑化方法。 - 請求項1〜9のいずれか一項に記載する平滑化方法において、
前記III−N材料のIII極表面[0001]に対して、前記立方晶窒化ホウ素を含む平滑化剤が使用される
ことを特徴とする平滑化方法。 - 自立型III−N基板であって、
前記IIIが、Al、Ga及びInから選択された周期表のIII族の少なくとも1つの元素を示し、
40mm超過の直径を有し、
請求項2〜10のいずれか一項に記載する平滑化方法を用いて作成される
ことを特徴とする自立型III−N基板。 - III−Nテンプレートであって、
前記IIIが、Al、Ga及びInから選択された周期表のIII族の少なくとも1つの元素を示し、
前記テンプレートが、異種基板、III−N上層及び任意にIII−N又は別の材料で形成された1つ又は複数の中間層を含み、
40mm超過の直径を有し、
請求項2〜10のいずれか一項に記載する平滑化方法を用いて作成される
ことを特徴とするIII−Nテンプレート。 - 請求項11に記載する自立型III−N基板であって、
白色光干渉法を用いた前記III−N基板の表面上のマッピングにおけるrms値の標準偏差が5%以下である
ことを特徴とする自立型III−N基板。 - 請求項12に記載するIII−Nテンプレートであって、
白色光干渉法を用いた前記III−Nテンプレートの表面上のマッピングにおけるrms値の標準偏差が5%以下である
ことを特徴とするIII−Nテンプレート。 - 請求項13又は14に記載する自立型III−N基板又はIII−Nテンプレートにおいて、
成長面に平行な前記III−N基板又はIII−Nテンプレートの表面上のロッキング曲線マッピングにより測定された半値全幅の標準偏差が5%以下である
ことを特徴とする自立型III−N基板又はIII−Nテンプレート。 - 請求項13〜15のいずれか一項に記載の自立型III−N基板又はIII−Nテンプレートにおいて、
成長面に平行な前記III−N基板又はIII−Nテンプレートの表面上のマイクロラマンマッピングにより測定されたE2フォノンの半値全幅の標準偏差が5%以下である
ことを特徴とする自立型III−N基板又はIII−Nテンプレート。 - 光デバイス、電子デバイス又は光電子デバイスを製造するために用いられる
ことを特徴とする請求項11、13、15若しくは16に記載するIII−N基板又は請求項12、14、15若しくは16に記載するIII−Nテンプレート。
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PCT/EP2006/007413 WO2008011897A1 (de) | 2006-07-26 | 2006-07-26 | Verfahren zum glätten von iii-n-substraten |
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US9312129B2 (en) | 2012-09-05 | 2016-04-12 | Saint-Gobain Cristaux Et Detecteurs | Group III-V substrate material with particular crystallographic features and methods of making |
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PL184902B1 (pl) | 1997-04-04 | 2003-01-31 | Centrum Badan Wysokocisnieniowych Pan | Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N |
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US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
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US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
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EP2024992B1 (de) | 2017-03-01 |
CN101484981A (zh) | 2009-07-15 |
KR20130022426A (ko) | 2013-03-06 |
EP2024992A1 (de) | 2009-02-18 |
EP3157045B1 (de) | 2021-09-08 |
PL3157045T3 (pl) | 2021-12-20 |
JP2009545144A (ja) | 2009-12-17 |
CN101484981B (zh) | 2013-03-27 |
KR101408742B1 (ko) | 2014-06-18 |
PL2024992T3 (pl) | 2017-09-29 |
KR20090033359A (ko) | 2009-04-02 |
KR101363316B1 (ko) | 2014-02-14 |
EP3157045A1 (de) | 2017-04-19 |
WO2008011897A1 (de) | 2008-01-31 |
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