GB9826517D0 - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB9826517D0
GB9826517D0 GBGB9826517.6A GB9826517A GB9826517D0 GB 9826517 D0 GB9826517 D0 GB 9826517D0 GB 9826517 A GB9826517 A GB 9826517A GB 9826517 D0 GB9826517 D0 GB 9826517D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB9826517.6A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Priority to GBGB9826517.6A priority Critical patent/GB9826517D0/en
Publication of GB9826517D0 publication Critical patent/GB9826517D0/en
Priority to JP34342599A priority patent/JP2000188422A/en
Priority to GB9928531A priority patent/GB2344461B/en
Ceased legal-status Critical Current

Links

GBGB9826517.6A 1998-12-02 1998-12-02 Semiconductor devices Ceased GB9826517D0 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GBGB9826517.6A GB9826517D0 (en) 1998-12-02 1998-12-02 Semiconductor devices
JP34342599A JP2000188422A (en) 1998-12-02 1999-12-02 Semiconductor device
GB9928531A GB2344461B (en) 1998-12-02 1999-12-02 Semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9826517.6A GB9826517D0 (en) 1998-12-02 1998-12-02 Semiconductor devices

Publications (1)

Publication Number Publication Date
GB9826517D0 true GB9826517D0 (en) 1999-01-27

Family

ID=10843532

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9826517.6A Ceased GB9826517D0 (en) 1998-12-02 1998-12-02 Semiconductor devices
GB9928531A Expired - Fee Related GB2344461B (en) 1998-12-02 1999-12-02 Semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9928531A Expired - Fee Related GB2344461B (en) 1998-12-02 1999-12-02 Semiconductor devices

Country Status (2)

Country Link
JP (1) JP2000188422A (en)
GB (2) GB9826517D0 (en)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100304881B1 (en) * 1998-10-15 2001-10-12 구자홍 GaN system compound semiconductor and method for growing crystal thereof
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
KR100387099B1 (en) * 2001-05-02 2003-06-12 광주과학기술원 GaN-Based Light Emitting Diode and Fabrication Method thereof
TWI262606B (en) 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
DE10142653A1 (en) * 2001-08-31 2003-04-30 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component used as an illuminating diode or laser diode, has a semiconductor body with a radiation-producing active layer and a p-conducting contact layer containing indium gallium nitride
JP4088111B2 (en) 2002-06-28 2008-05-21 日立電線株式会社 Porous substrate and manufacturing method thereof, GaN-based semiconductor multilayer substrate and manufacturing method thereof
US6835957B2 (en) * 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
KR20040050735A (en) * 2002-12-09 2004-06-17 (주)옵트로닉스 The Method For Improving Ohmic-Contact In P-Type Ⅲ-Nitride Compound Semiconductor
KR100611491B1 (en) 2004-08-26 2006-08-10 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method thereof
KR100691283B1 (en) 2005-09-23 2007-03-12 삼성전기주식회사 Nitride semiconductor device
KR100780212B1 (en) 2006-03-30 2007-11-27 삼성전기주식회사 Nitride semiconductor device
US8592242B2 (en) * 2010-11-18 2013-11-26 Tsmc Solid State Lighting Ltd. Etching growth layers of light emitting devices to reduce leakage current
JP2014112599A (en) * 2012-12-05 2014-06-19 Stanley Electric Co Ltd Semiconductor light-emitting element and method of manufacturing the same
JP2015115377A (en) * 2013-12-10 2015-06-22 株式会社リコー Compound semiconductor device, light source device, laser device and compound semiconductor device manufacturing method
CN105633223B (en) * 2015-12-31 2018-10-09 华灿光电(苏州）有限公司 Semiconductor devices in AlGaN templates, the preparation method of AlGaN templates and AlGaN templates
CN110335927B (en) * 2019-07-11 2020-10-30 马鞍山杰生半导体有限公司 Ultraviolet LED and preparation method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
US5729029A (en) * 1996-09-06 1998-03-17 Hewlett-Packard Company Maximizing electrical doping while reducing material cracking in III-V nitride semiconductor devices
TW398084B (en) * 1998-06-05 2000-07-11 Hewlett Packard Co Multilayered indium-containing nitride buffer layer for nitride epitaxy

Also Published As

Publication number Publication date
JP2000188422A (en) 2000-07-04
GB9928531D0 (en) 2000-02-02
GB2344461A (en) 2000-06-07
GB2344461B (en) 2002-05-22

Similar Documents

Publication Publication Date Title
GB9920418D0 (en) Semiconductor devices
GB9911467D0 (en) Semiconductor devices
GB0002758D0 (en) Semiconductor devices
GB9807692D0 (en) Optival devices
IL139532A0 (en) Semiconductor device
EP1143536A4 (en) Semiconductor device
GB9922763D0 (en) Semiconductor devices
SG81289A1 (en) Semiconductor device
GB9700923D0 (en) Semiconductor devices
GB2338344B (en) Semiconductor device
GB2344461B (en) Semiconductor devices
GB9812309D0 (en) Fluid-treatment devices
GB2323968B (en) Semiconductor device
GB9820192D0 (en) Semiconductor device
GB9820567D0 (en) Semiconductor device
GB2341275B (en) Semiconductor devices
GB2344456B (en) Semiconductor devices
EP1039547A4 (en) Semiconductor device
GB9826516D0 (en) Semiconductor devices
GB2344457B (en) Semiconductor devices
GB9823778D0 (en) Semiconductor devices
GB2332301B (en) Semiconductor device
GB9813926D0 (en) Semiconductor device
GB2344462B (en) Semiconductor devices
GB9827901D0 (en) Active semiconductor

Legal Events

Date Code Title Description
AT Applications terminated before publication under section 16(1)