GB2344462B - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB2344462B
GB2344462B GB9928532A GB9928532A GB2344462B GB 2344462 B GB2344462 B GB 2344462B GB 9928532 A GB9928532 A GB 9928532A GB 9928532 A GB9928532 A GB 9928532A GB 2344462 B GB2344462 B GB 2344462B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9928532A
Other versions
GB9928532D0 (en
GB2344462A (en
Inventor
Wang Nang Wang
Stephen Sen-Tien Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Publication of GB9928532D0 publication Critical patent/GB9928532D0/en
Publication of GB2344462A publication Critical patent/GB2344462A/en
Application granted granted Critical
Publication of GB2344462B publication Critical patent/GB2344462B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Ceramic Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Devices (AREA)
GB9928532A 1998-12-02 1999-12-02 Semiconductor devices Expired - Fee Related GB2344462B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9826519.2A GB9826519D0 (en) 1998-12-02 1998-12-02 Semiconductor devices

Publications (3)

Publication Number Publication Date
GB9928532D0 GB9928532D0 (en) 2000-02-02
GB2344462A GB2344462A (en) 2000-06-07
GB2344462B true GB2344462B (en) 2001-05-16

Family

ID=10843534

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9826519.2A Ceased GB9826519D0 (en) 1998-12-02 1998-12-02 Semiconductor devices
GB9928532A Expired - Fee Related GB2344462B (en) 1998-12-02 1999-12-02 Semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB9826519.2A Ceased GB9826519D0 (en) 1998-12-02 1998-12-02 Semiconductor devices

Country Status (2)

Country Link
JP (1) JP2000173941A (en)
GB (2) GB9826519D0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104183793A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Preparation method for organic light-emitting device

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3812519A (en) * 1970-02-07 1974-05-21 Tokyo Shibaura Electric Co Silicon double doped with p and as or b and as
US4137103A (en) * 1976-12-06 1979-01-30 International Business Machines Corporation Silicon integrated circuit region containing implanted arsenic and germanium
GB2086135A (en) * 1980-09-30 1982-05-06 Nippon Telegraph & Telephone Electrode and semiconductor device provided with the electrode
US4631234A (en) * 1985-09-13 1986-12-23 Texas Instruments Incorporated Germanium hardened silicon substrate
EP0366552A2 (en) * 1988-10-27 1990-05-02 Fujitsu Limited Method of manufacturing a heterojunction bipolar transistor
US5005057A (en) * 1989-04-28 1991-04-02 Kabushiki Kaisha Toshiba Semiconductor light-emitting diode and method of manufacturing the same
EP0807978A2 (en) * 1996-05-10 1997-11-19 Paul-Drude-Institut für Festkörperelektronik A method of fabricating a layer of high p-type conductivity in a semiconductor component and a semiconductor component having such a layer
US5744396A (en) * 1995-06-22 1998-04-28 Motorola, Inc. Semiconductor device formed on a highly doped N+ substrate

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3812519A (en) * 1970-02-07 1974-05-21 Tokyo Shibaura Electric Co Silicon double doped with p and as or b and as
US4137103A (en) * 1976-12-06 1979-01-30 International Business Machines Corporation Silicon integrated circuit region containing implanted arsenic and germanium
GB2086135A (en) * 1980-09-30 1982-05-06 Nippon Telegraph & Telephone Electrode and semiconductor device provided with the electrode
US4631234A (en) * 1985-09-13 1986-12-23 Texas Instruments Incorporated Germanium hardened silicon substrate
EP0366552A2 (en) * 1988-10-27 1990-05-02 Fujitsu Limited Method of manufacturing a heterojunction bipolar transistor
US5005057A (en) * 1989-04-28 1991-04-02 Kabushiki Kaisha Toshiba Semiconductor light-emitting diode and method of manufacturing the same
US5744396A (en) * 1995-06-22 1998-04-28 Motorola, Inc. Semiconductor device formed on a highly doped N+ substrate
EP0807978A2 (en) * 1996-05-10 1997-11-19 Paul-Drude-Institut für Festkörperelektronik A method of fabricating a layer of high p-type conductivity in a semiconductor component and a semiconductor component having such a layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104183793A (en) * 2013-05-22 2014-12-03 海洋王照明科技股份有限公司 Preparation method for organic light-emitting device

Also Published As

Publication number Publication date
GB9928532D0 (en) 2000-02-02
GB9826519D0 (en) 1999-01-27
JP2000173941A (en) 2000-06-23
GB2344462A (en) 2000-06-07

Similar Documents

Publication Publication Date Title
GB9920418D0 (en) Semiconductor devices
GB9911467D0 (en) Semiconductor devices
GB0002758D0 (en) Semiconductor devices
GB9807692D0 (en) Optival devices
IL139532A0 (en) Semiconductor device
EP1143536A4 (en) Semiconductor device
GB9922763D0 (en) Semiconductor devices
SG81289A1 (en) Semiconductor device
GB9700923D0 (en) Semiconductor devices
GB2338344B (en) Semiconductor device
GB2344461B (en) Semiconductor devices
GB9812309D0 (en) Fluid-treatment devices
GB2323968B (en) Semiconductor device
GB9820192D0 (en) Semiconductor device
GB9820567D0 (en) Semiconductor device
GB2341275B (en) Semiconductor devices
GB2344456B (en) Semiconductor devices
EP1039547A4 (en) Semiconductor device
GB9826516D0 (en) Semiconductor devices
GB2344457B (en) Semiconductor devices
GB9823778D0 (en) Semiconductor devices
GB2332301B (en) Semiconductor device
GB9813926D0 (en) Semiconductor device
GB2344462B (en) Semiconductor devices
GB9827901D0 (en) Active semiconductor

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20071202