GB2344461B - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB2344461B
GB2344461B GB9928531A GB9928531A GB2344461B GB 2344461 B GB2344461 B GB 2344461B GB 9928531 A GB9928531 A GB 9928531A GB 9928531 A GB9928531 A GB 9928531A GB 2344461 B GB2344461 B GB 2344461B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9928531A
Other versions
GB9928531D0 (en
GB2344461A (en
Inventor
Wang Nang Wang
Stephen Sen-Tien Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arima Optoelectronics Corp
Original Assignee
Arima Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arima Optoelectronics Corp filed Critical Arima Optoelectronics Corp
Publication of GB9928531D0 publication Critical patent/GB9928531D0/en
Publication of GB2344461A publication Critical patent/GB2344461A/en
Application granted granted Critical
Publication of GB2344461B publication Critical patent/GB2344461B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
GB9928531A 1998-12-02 1999-12-02 Semiconductor devices Expired - Fee Related GB2344461B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9826517.6A GB9826517D0 (en) 1998-12-02 1998-12-02 Semiconductor devices

Publications (3)

Publication Number Publication Date
GB9928531D0 GB9928531D0 (en) 2000-02-02
GB2344461A GB2344461A (en) 2000-06-07
GB2344461B true GB2344461B (en) 2002-05-22

Family

ID=10843532

Family Applications (2)

Application Number Title Priority Date Filing Date
GBGB9826517.6A Ceased GB9826517D0 (en) 1998-12-02 1998-12-02 Semiconductor devices
GB9928531A Expired - Fee Related GB2344461B (en) 1998-12-02 1999-12-02 Semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GBGB9826517.6A Ceased GB9826517D0 (en) 1998-12-02 1998-12-02 Semiconductor devices

Country Status (2)

Country Link
JP (1) JP2000188422A (en)
GB (2) GB9826517D0 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017113523A1 (en) * 2015-12-31 2017-07-06 华灿光电(苏州）有限公司 Algan template, preparation method for algan template, and semiconductor device on algan template

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100304881B1 (en) * 1998-10-15 2001-10-12 구자홍 GaN system compound semiconductor and method for growing crystal thereof
US6447604B1 (en) * 2000-03-13 2002-09-10 Advanced Technology Materials, Inc. Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devices
US6596079B1 (en) 2000-03-13 2003-07-22 Advanced Technology Materials, Inc. III-V nitride substrate boule and method of making and using the same
KR100387099B1 (en) * 2001-05-02 2003-06-12 광주과학기술원 GaN-Based Light Emitting Diode and Fabrication Method thereof
TWI262606B (en) 2001-08-30 2006-09-21 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor-element and its production method
DE10142653A1 (en) * 2001-08-31 2003-04-30 Osram Opto Semiconductors Gmbh Radiation-emitting semiconductor component used as an illuminating diode or laser diode, has a semiconductor body with a radiation-producing active layer and a p-conducting contact layer containing indium gallium nitride
JP4088111B2 (en) * 2002-06-28 2008-05-21 日立電線株式会社 Porous substrate and manufacturing method thereof, GaN-based semiconductor multilayer substrate and manufacturing method thereof
US6835957B2 (en) * 2002-07-30 2004-12-28 Lumileds Lighting U.S., Llc III-nitride light emitting device with p-type active layer
KR20040050735A (en) * 2002-12-09 2004-06-17 (주)옵트로닉스 The Method For Improving Ohmic-Contact In P-Type Ⅲ-Nitride Compound Semiconductor
KR100611491B1 (en) 2004-08-26 2006-08-10 엘지이노텍 주식회사 Nitride semiconductor LED and fabrication method thereof
KR100691283B1 (en) 2005-09-23 2007-03-12 삼성전기주식회사 Nitride semiconductor device
KR100780212B1 (en) 2006-03-30 2007-11-27 삼성전기주식회사 Nitride semiconductor device
US8592242B2 (en) * 2010-11-18 2013-11-26 Tsmc Solid State Lighting Ltd. Etching growth layers of light emitting devices to reduce leakage current
JP2014112599A (en) * 2012-12-05 2014-06-19 Stanley Electric Co Ltd Semiconductor light-emitting element and method of manufacturing the same
JP2015115377A (en) * 2013-12-10 2015-06-22 株式会社リコー Compound semiconductor device, light source device, laser device and compound semiconductor device manufacturing method
CN110335927B (en) * 2019-07-11 2020-10-30 马鞍山杰生半导体有限公司 Ultraviolet LED and preparation method thereof

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2317053A (en) * 1996-09-06 1998-03-11 Hewlett Packard Co Nitride LED
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
GB2338107A (en) * 1998-06-05 1999-12-08 Hewlett Packard Co Buffer layers for semiconductor devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5798537A (en) * 1995-08-31 1998-08-25 Kabushiki Kaisha Toshiba Blue light-emitting device
GB2317053A (en) * 1996-09-06 1998-03-11 Hewlett Packard Co Nitride LED
GB2338107A (en) * 1998-06-05 1999-12-08 Hewlett Packard Co Buffer layers for semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017113523A1 (en) * 2015-12-31 2017-07-06 华灿光电(苏州）有限公司 Algan template, preparation method for algan template, and semiconductor device on algan template

Also Published As

Publication number Publication date
JP2000188422A (en) 2000-07-04
GB9826517D0 (en) 1999-01-27
GB9928531D0 (en) 2000-02-02
GB2344461A (en) 2000-06-07

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20131202