JP5542292B2 - Iii−v族窒化物基板ボウル、並びにiii−v族窒化物基板ボウル製造法及び使用法 - Google Patents
Iii−v族窒化物基板ボウル、並びにiii−v族窒化物基板ボウル製造法及び使用法 Download PDFInfo
- Publication number
- JP5542292B2 JP5542292B2 JP2001567830A JP2001567830A JP5542292B2 JP 5542292 B2 JP5542292 B2 JP 5542292B2 JP 2001567830 A JP2001567830 A JP 2001567830A JP 2001567830 A JP2001567830 A JP 2001567830A JP 5542292 B2 JP5542292 B2 JP 5542292B2
- Authority
- JP
- Japan
- Prior art keywords
- boule
- growth
- seed
- wafer
- gan
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
- H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
- H01L21/0243—Surface structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02581—Transition metal or rare earth elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Description
本発明はBMDO契約書#DNA001−95−C−0155、DARPA契約書#DAAL01−96−C−0049及びDARPA契約書#DAAL01−98−C−0071の遂行のために行われた。政府は本発明に特定の権利を所有する。
発明の背景
発明の分野
本発明はIII−V族窒化物基板ブール、並びにその製造方法及び使用方法、さらにはかかるブールから誘導されるウエハー、かかるウエハー上及び/又はウエハー中に製造されるマイクロエレクトロニクス・デバイスとデバイス前駆体構造体に関する。
現在、窒化物エピタキシャル層の堆積のための高品質のIII−V族窒化物基板が不足していることが、短波長光電子デバイス、高出力高周波電子デバイスの性能を制限し、必要とされ要望される開発を遅らせている。
本発明は、従来技術の問題点および限界を、天然窒化物シードでIII−V族窒化物ブール(インゴット)の気相成長により克服する。
下記の米国特許および米国特許出願に基づいた開示は、それら各々を完全に参照することにより援用される:米国特許出願No. 08/188,469、1994年1月27日出願、発明者Michael A. Tischlerr, et al. 、現在、米国特許5,679,152号として発行;米国特許出願No. 08/955,168号、1997年10月21日出願、Michael A. Tischler, et al.; 米国特許出願 No. 08/984,473、1997年12月3日出願、発明者 Robert P. Vaudo, et al.; 米国特許出願No. 08/179,049 、1998年10月26日出願、発明者 Robert P. Vaudo, et al.
天然窒化物シードは、合金組成中で、成長するブール材料に接近して整合しており、熱膨張係数(TCE)及び格子不整合に関連した歪を減少させ、亀裂を起こさないで、(10mmを超える軸範囲の)長いブール材料の成長を促進する。独立した(Al、Ga、In)−Nシード結晶は、いかなる方法で生成しても良く、限定するわけではないが、熱的、化学的又は物理的除去または犠牲基板の分離よって成長後に除去される異種基板上に成長中の厚膜を含む(独立した(Al、Ga、In)−N材料の実施例及び関連した調整法は、発明者Robert P.Vaudo,et alで、1998年10月26日に出願された係属中の米国特許出願第09/179,049号「低欠陥密度(Al、Ga、In)−N及び同一物を製造するためのハライド気相成長(HVPE)プロセス」と米国特許第5,679,152号に開示されている)。
ブール成長のために、本発明による(Al、Ga、In)−Nの堆積が、高成長速度気相エピタクシー(VPE)技法によって、実行されるのは有利である。気相での成長は、従来のバルク成長技術においてよりも、平衡からさらに進んで、III族元素と比較するとかなり多くのN−反応物が供給可能となるので、高圧装置は不必要となる。
n−型,p−型及び/又は深い準位の不純物を、成長プロセスの気相に添加することによって、(Al,Ga,In)N材料の伝導性を制御できる。例えば、成長プロセスの気流中のシラン又はゲルマンを用いる、ケイ素またはゲルマニウムのようなn−型不純物の添加は、材料のn−型伝導性の制御に使用できる。相応して、有機金属または他のプロセス気流に移送されるこれらの元素の源を用いて、ベリリウム、マグネシウム又は亜鉛のようなp−型不純物の添加及び活性化は、ブールから作製されるブール材料及びウエハーのp−型伝導性を制御するために使われる。1cm3あたり1E15〜1E20のドナー及びアクセプターの濃度範囲が好ましく、本方法の実施においては、1cm3あたり5E17〜1E19の濃度範囲がより好ましい。
n−型不純物の製造は、このようにして、非常に均一なドーピングを達成させ、成長期間中、リアクターにおいて不純物の高濃度という有害な効果を回避している。他のドーピング技術を使用した場合に高ドーピング濃度により発生の可能性がある脆化もまた、核変換ドーピングでは減少している。
本発明に基づき成長したブールは、ブールから得られたウエハー製品の最終用途に適する寸法的特性を持つ。例えば、ブールの断面積(側面積)は5−10cm2またはそれ以上であり、長さは4−5mmあるいはもっと長い。ブールはスライシング又は他の材料分割により個々のウエハー(例えば、0.1から0.7ミリメータの厚さ)にするのに、十分な長さを持つべきである。
本発明による方法は、結晶(Al,Ga,In)Nブールが高速度成長の気相エピタキシにより製造され、ブールは格子整合シードの上に大きい断面積(例えば>1cm直径)、長さ>1mmを有する。成長速度は、例えば、900から1200℃の温度で20μ/時間以上、GaNに対しては900から1100℃が好ましく、AlNに対しては950から1200℃が好ましい。
GaNブールは、 図2に概略的に示した類型のリアクターシステムにおいて、水素化物気相エピタキシ成長法(HVPE)により、GaNシード結晶の上に成長させた。気体塩化ガリウム化合物を形成するために、Ga成分は約850℃において塩素ガスと溶融Gaとの相互作用によって得られた。アンモニア(NH3)ガスは窒素成分を提供した。
【図面の簡単な説明】
【図2】図2は、本発明の一の実施例によるブールの製造のためのGaN HVPEシステムの概略図である。
【図3】図3は、本発明の一の実施例によるHVPEブール製法により製造されたGaNウエハーに対する、ダブルクリスタルX線ロッキング曲線である。
【図4】図4は、本発明のブールから得られたウエハー上に形成されたダブルヘテロ構造LEDの概略図である。
【図5】図5は、本発明のブールから得られたウエハー上に製造されたへき開レーザー・ダイオードの概略図である。
【図6】図6は、本発明のブールから得られたウエハー上に製造された紫外線光検出器の概略図である。
【図7】図7は、本発明のブールから得られたウエハー上に製造された高電子移動度トランジスタの概略図である。
【図8】図8は、本発明のブールから得られたウエハー上に製造された高電力整流器の概略図である。
【図9】図9は、本発明の一の実施例によるブールから得られたn−型GaNウエハー上に製造されたAlGaN/GaNヘテロジャンクションバイポーラトランジスタの概略図である。
Claims (11)
- (Al,Ga,In)Nのみからなる独立したシード材料及びその上に4mm以上の長さまで成長したブール材料を含み、前記(Al,Ga,In)Nシード材料と前記ブール材料との間にパターン化されたSi3N4、WまたはSiO2で構成された中間層を有する(Al,Ga,In)Nブールであって、前記(Al,Ga,In)Nシード材料より大きい横断面積の端を有する(Al,Ga,In)Nブール。
- 前記ブール材料がウエハー源材料を含んでおり、前記中間層の材料は、ウエハー源材料の歪の軽減もしくは適応、ウエハー源材料の電気特性の変換、ウエハー源材料の欠陥密度の軽減、ウエハー源材料の(Al,Ga,In)Nシード材料からの分離促進及びウエハー源材料の核形成成長の促進のうちの少なくとも1つの機能性を有する請求項1に記載のブール。
- 前記中間層が、気相エピタクシー、化学的蒸着、物理的蒸着、分子線エピタクシー、有機金属化学気相エピタクシー及びハイドライド気相エピタクシーからなる群から選択された堆積プロセスにより堆積された請求項1又は2に記載のブール。
- 前記中間層のパターン化がエッチングによってなされた請求項1〜3のいずれか1項に記載のブール。
- 前記中間層が単層である請求項1〜4のいずれか1項に記載のブール。
- 表面欠陥密度が1cm2あたり106未満である請求項1〜5のいずれか1項に記載のブール。
- 表面欠陥密度が1cm2あたり104未満である請求項1〜5のいずれか1項に記載のブール。
- 1cmを超える直径を有し、実質的に無亀裂である請求項1〜7のいずれか1項に記載のブール。
- c−軸、a−軸、m−軸及びr−軸からなる群から選択された配向を有するシード結晶上で成長し、該選択された配向である第一結晶軸から1〜10度の範囲内の角度で切断された結晶配向を有する請求項1〜8のいずれか1項に記載のブール。
- 第一結晶軸から1〜10度の範囲内の角度で切断された結晶配向を有するシード結晶上で成長した請求項1〜8のいずれか1項に記載のブール。
- 前記(Al,Ga,In)窒化物がGaNを含む請求項1〜10のいずれか1項に記載のブール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/524,062 US6596079B1 (en) | 2000-03-13 | 2000-03-13 | III-V nitride substrate boule and method of making and using the same |
US09/524,062 | 2000-03-13 | ||
PCT/US2001/007945 WO2001068955A1 (en) | 2000-03-13 | 2001-03-12 | Iii-v nitride substrate boule and method of making and using the same |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011221730A Division JP5670289B2 (ja) | 2000-03-13 | 2011-10-06 | (Al,Ga,In)Nブールの製造方法、単結晶、マイクロエレクトロニクス・デバイス構造、(Al、Ga、In)Nブール、ウエハおよび部品 |
JP2014030490A Division JP2014133695A (ja) | 2000-03-13 | 2014-02-20 | Iii−v族窒化物基板ボウル、並びにiii−v族窒化物基板ボウル製造法及び使用法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2003527296A JP2003527296A (ja) | 2003-09-16 |
JP2003527296A5 JP2003527296A5 (ja) | 2008-04-24 |
JP5542292B2 true JP5542292B2 (ja) | 2014-07-09 |
Family
ID=24087600
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2001567830A Expired - Lifetime JP5542292B2 (ja) | 2000-03-13 | 2001-03-12 | Iii−v族窒化物基板ボウル、並びにiii−v族窒化物基板ボウル製造法及び使用法 |
JP2011221730A Expired - Lifetime JP5670289B2 (ja) | 2000-03-13 | 2011-10-06 | (Al,Ga,In)Nブールの製造方法、単結晶、マイクロエレクトロニクス・デバイス構造、(Al、Ga、In)Nブール、ウエハおよび部品 |
JP2014030490A Pending JP2014133695A (ja) | 2000-03-13 | 2014-02-20 | Iii−v族窒化物基板ボウル、並びにiii−v族窒化物基板ボウル製造法及び使用法 |
Family Applications After (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011221730A Expired - Lifetime JP5670289B2 (ja) | 2000-03-13 | 2011-10-06 | (Al,Ga,In)Nブールの製造方法、単結晶、マイクロエレクトロニクス・デバイス構造、(Al、Ga、In)Nブール、ウエハおよび部品 |
JP2014030490A Pending JP2014133695A (ja) | 2000-03-13 | 2014-02-20 | Iii−v族窒化物基板ボウル、並びにiii−v族窒化物基板ボウル製造法及び使用法 |
Country Status (12)
Country | Link |
---|---|
US (4) | US6596079B1 (ja) |
EP (2) | EP1264011B1 (ja) |
JP (3) | JP5542292B2 (ja) |
KR (1) | KR100767650B1 (ja) |
CN (2) | CN101307498B (ja) |
AU (1) | AU2001247389A1 (ja) |
IL (2) | IL151698A0 (ja) |
MY (1) | MY122821A (ja) |
PL (1) | PL357941A1 (ja) |
RU (1) | RU2272090C2 (ja) |
TW (1) | TWI259513B (ja) |
WO (1) | WO2001068955A1 (ja) |
Families Citing this family (291)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6958093B2 (en) * | 1994-01-27 | 2005-10-25 | Cree, Inc. | Free-standing (Al, Ga, In)N and parting method for forming same |
US5679152A (en) * | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
JP4374156B2 (ja) * | 2000-09-01 | 2009-12-02 | 日本碍子株式会社 | Iii−v族窒化物膜の製造装置及び製造方法 |
JP2002173895A (ja) * | 2000-09-25 | 2002-06-21 | Nippon Paper Industries Co Ltd | グラビア印刷用紙 |
US7615780B2 (en) * | 2000-10-23 | 2009-11-10 | General Electric Company | DNA biosensor and methods for making and using the same |
US7053413B2 (en) * | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
US8507361B2 (en) * | 2000-11-27 | 2013-08-13 | Soitec | Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
US6649287B2 (en) * | 2000-12-14 | 2003-11-18 | Nitronex Corporation | Gallium nitride materials and methods |
US6576932B2 (en) * | 2001-03-01 | 2003-06-10 | Lumileds Lighting, U.S., Llc | Increasing the brightness of III-nitride light emitting devices |
US6806508B2 (en) * | 2001-04-20 | 2004-10-19 | General Electic Company | Homoepitaxial gallium nitride based photodetector and method of producing |
US6706114B2 (en) * | 2001-05-21 | 2004-03-16 | Cree, Inc. | Methods of fabricating silicon carbide crystals |
CN100453710C (zh) * | 2001-06-06 | 2009-01-21 | 波兰商艾蒙诺公司 | 获得整体单晶性含镓氮化物的方法及装置 |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
US7501023B2 (en) * | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
US20070032046A1 (en) * | 2001-07-06 | 2007-02-08 | Dmitriev Vladimir A | Method for simultaneously producing multiple wafers during a single epitaxial growth run and semiconductor structure grown thereby |
US20030205193A1 (en) * | 2001-07-06 | 2003-11-06 | Melnik Yuri V. | Method for achieving low defect density aigan single crystal boules |
US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
JP4097601B2 (ja) * | 2001-10-26 | 2008-06-11 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 窒化物半導体レーザ素子、及びその製造方法 |
US6881261B2 (en) * | 2001-11-13 | 2005-04-19 | Matsushita Electric Industrial Co., Ltd. | Method for fabricating semiconductor device |
JP3856750B2 (ja) * | 2001-11-13 | 2006-12-13 | 松下電器産業株式会社 | 半導体装置及びその製造方法 |
US7638346B2 (en) * | 2001-12-24 | 2009-12-29 | Crystal Is, Inc. | Nitride semiconductor heterostructures and related methods |
US8545629B2 (en) | 2001-12-24 | 2013-10-01 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
US20060005763A1 (en) * | 2001-12-24 | 2006-01-12 | Crystal Is, Inc. | Method and apparatus for producing large, single-crystals of aluminum nitride |
JP4063548B2 (ja) * | 2002-02-08 | 2008-03-19 | 日本碍子株式会社 | 半導体発光素子 |
US8809867B2 (en) | 2002-04-15 | 2014-08-19 | The Regents Of The University Of California | Dislocation reduction in non-polar III-nitride thin films |
EP2154270A3 (en) * | 2002-04-15 | 2013-07-24 | The Regents of the University of California | Non-polar a-plane gallium nitride thin films grown by metalorganic chemical vapor deposition |
CN100380675C (zh) | 2002-04-30 | 2008-04-09 | 克利公司 | 包括GaN的高压微电子器件 |
JP2003327497A (ja) * | 2002-05-13 | 2003-11-19 | Sumitomo Electric Ind Ltd | GaN単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法 |
US20060138431A1 (en) | 2002-05-17 | 2006-06-29 | Robert Dwilinski | Light emitting device structure having nitride bulk single crystal layer |
US7070703B2 (en) * | 2002-05-23 | 2006-07-04 | Hitachi Global Storage Technologies Netherlands B.V. | Process for producing glass disk substrates for magnetically recordable data storage disks |
KR101088991B1 (ko) * | 2002-12-11 | 2011-12-01 | 니치아 카가쿠 고교 가부시키가이샤 | 벌크 단결정 갈륨-함유 질화물의 제조공정 |
ATE457372T1 (de) | 2002-12-11 | 2010-02-15 | Ammono Sp Zoo | Substrat für epitaxie und verfahren zu seiner herstellung |
US7786503B2 (en) * | 2002-12-27 | 2010-08-31 | Momentive Performance Materials Inc. | Gallium nitride crystals and wafers and method of making |
US7098487B2 (en) * | 2002-12-27 | 2006-08-29 | General Electric Company | Gallium nitride crystal and method of making same |
AU2003299899A1 (en) | 2002-12-27 | 2004-07-29 | General Electric Company | Gallium nitride crystal, homoepitaxial gallium-nitride-based devices and method for producing same |
US9279193B2 (en) * | 2002-12-27 | 2016-03-08 | Momentive Performance Materials Inc. | Method of making a gallium nitride crystalline composition having a low dislocation density |
US20070040181A1 (en) * | 2002-12-27 | 2007-02-22 | General Electric Company | Crystalline composition, wafer, and semi-conductor structure |
US8357945B2 (en) * | 2002-12-27 | 2013-01-22 | Momentive Performance Materials Inc. | Gallium nitride crystal and method of making same |
US7638815B2 (en) * | 2002-12-27 | 2009-12-29 | Momentive Performance Materials Inc. | Crystalline composition, wafer, and semi-conductor structure |
US7859008B2 (en) * | 2002-12-27 | 2010-12-28 | Momentive Performance Materials Inc. | Crystalline composition, wafer, device, and associated method |
US20060169996A1 (en) * | 2002-12-27 | 2006-08-03 | General Electric Company | Crystalline composition, wafer, and semi-conductor structure |
US7221037B2 (en) * | 2003-01-20 | 2007-05-22 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing group III nitride substrate and semiconductor device |
US7898047B2 (en) * | 2003-03-03 | 2011-03-01 | Samsung Electronics Co., Ltd. | Integrated nitride and silicon carbide-based devices and methods of fabricating integrated nitride-based devices |
US7112860B2 (en) * | 2003-03-03 | 2006-09-26 | Cree, Inc. | Integrated nitride-based acoustic wave devices and methods of fabricating integrated nitride-based acoustic wave devices |
JP4052150B2 (ja) * | 2003-03-05 | 2008-02-27 | 住友電気工業株式会社 | 窒化物系半導体装置の製造方法 |
KR101167732B1 (ko) | 2003-03-17 | 2012-07-23 | 오사카 유니버시티 | Ⅲ족 원소 질화물 단결정의 제조 방법 및 이것에 이용하는장치 |
KR100550491B1 (ko) * | 2003-05-06 | 2006-02-09 | 스미토모덴키고교가부시키가이샤 | 질화물 반도체 기판 및 질화물 반도체 기판의 가공 방법 |
US7170095B2 (en) * | 2003-07-11 | 2007-01-30 | Cree Inc. | Semi-insulating GaN and method of making the same |
JP2005112641A (ja) * | 2003-10-03 | 2005-04-28 | Sumitomo Electric Ind Ltd | 窒化物半導体基板および窒化物半導体基板の製造方法 |
EP1679740A4 (en) * | 2003-10-27 | 2009-09-02 | Sumitomo Electric Industries | GALLIUM NITRIDE SEMICONDUCTOR SUBSTRATE AND PROCESS FOR PRODUCING THE SAME |
JP4232605B2 (ja) | 2003-10-30 | 2009-03-04 | 住友電気工業株式会社 | 窒化物半導体基板の製造方法と窒化物半導体基板 |
US7323256B2 (en) * | 2003-11-13 | 2008-01-29 | Cree, Inc. | Large area, uniformly low dislocation density GaN substrate and process for making the same |
US7118813B2 (en) * | 2003-11-14 | 2006-10-10 | Cree, Inc. | Vicinal gallium nitride substrate for high quality homoepitaxy |
US20050112281A1 (en) * | 2003-11-21 | 2005-05-26 | Rajaram Bhat | Growth of dilute nitride compounds |
DE10355600B4 (de) * | 2003-11-28 | 2021-06-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Halbleiterchip und Verfahren zur Herstellung von Halbleiterchips |
EP1697983B1 (en) | 2003-12-09 | 2012-06-13 | The Regents of The University of California | Highly efficient gallium nitride based light emitting diodes having surface roughening |
KR100506739B1 (ko) * | 2003-12-23 | 2005-08-08 | 삼성전기주식회사 | 알루미늄(Al)을 함유한 질화물 반도체 결정 성장방법 |
US7135715B2 (en) * | 2004-01-07 | 2006-11-14 | Cree, Inc. | Co-doping for fermi level control in semi-insulating Group III nitrides |
JP4513326B2 (ja) * | 2004-01-14 | 2010-07-28 | 日立電線株式会社 | 窒化物半導体結晶の製造方法及び窒化物半導体基板の製造方法 |
JP4991116B2 (ja) * | 2004-02-13 | 2012-08-01 | フライベルゲル・コンパウンド・マテリアルズ・ゲーエムベーハー | クラックフリーiii族窒化物半導体材料の製造方法 |
JP3888374B2 (ja) * | 2004-03-17 | 2007-02-28 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
JP2006306722A (ja) * | 2004-03-17 | 2006-11-09 | Sumitomo Electric Ind Ltd | GaN単結晶基板の製造方法及びGaN単結晶基板 |
JP4552516B2 (ja) * | 2004-06-01 | 2010-09-29 | 住友電気工業株式会社 | AlN単結晶の製造方法 |
US7956360B2 (en) * | 2004-06-03 | 2011-06-07 | The Regents Of The University Of California | Growth of planar reduced dislocation density M-plane gallium nitride by hydride vapor phase epitaxy |
JP2005347634A (ja) * | 2004-06-04 | 2005-12-15 | Sumitomo Electric Ind Ltd | AlGaInN系単結晶ウエハ |
JP5015417B2 (ja) * | 2004-06-09 | 2012-08-29 | 住友電気工業株式会社 | GaN結晶の製造方法 |
EP1769105B1 (en) * | 2004-06-11 | 2014-05-14 | Ammono S.A. | Bulk mono-crystalline gallium nitride and method for its preparation |
JP2006044982A (ja) * | 2004-08-04 | 2006-02-16 | Sumitomo Electric Ind Ltd | 窒化物半導体単結晶基板とその合成方法 |
US8449672B2 (en) * | 2004-09-03 | 2013-05-28 | The United States Of America As Represented By The Secretary Of The Navy | Method of growing group III nitride crystals |
JP2006108435A (ja) | 2004-10-06 | 2006-04-20 | Sumitomo Electric Ind Ltd | 窒化物半導体ウエハ |
PL371405A1 (pl) * | 2004-11-26 | 2006-05-29 | Ammono Sp.Z O.O. | Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku |
EP1819473A1 (de) * | 2004-12-10 | 2007-08-22 | Freiberger Compound Materials GmbH | Werkst]ckhalterung und verfahren zum drahts[gen |
JP4525353B2 (ja) * | 2005-01-07 | 2010-08-18 | 住友電気工業株式会社 | Iii族窒化物基板の製造方法 |
US10374120B2 (en) * | 2005-02-18 | 2019-08-06 | Koninklijke Philips N.V. | High efficiency solar cells utilizing wafer bonding and layer transfer to integrate non-lattice matched materials |
JP4563230B2 (ja) * | 2005-03-28 | 2010-10-13 | 昭和電工株式会社 | AlGaN基板の製造方法 |
JP2006290677A (ja) * | 2005-04-11 | 2006-10-26 | Hitachi Cable Ltd | 窒化物系化合物半導体結晶の製造方法及び窒化物系化合物半導体基板の製造方法 |
WO2006116030A2 (en) | 2005-04-21 | 2006-11-02 | Aonex Technologies, Inc. | Bonded intermediate substrate and method of making same |
JP4792802B2 (ja) * | 2005-04-26 | 2011-10-12 | 住友電気工業株式会社 | Iii族窒化物結晶の表面処理方法 |
KR100673873B1 (ko) * | 2005-05-12 | 2007-01-25 | 삼성코닝 주식회사 | 열전도도가 우수한 질화갈륨 단결정 기판 |
JP4363368B2 (ja) * | 2005-06-13 | 2009-11-11 | 住友電気工業株式会社 | 化合物半導体部材のダメージ評価方法、及び化合物半導体部材の製造方法 |
US8771552B2 (en) | 2005-06-23 | 2014-07-08 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same |
JP4518209B1 (ja) | 2009-09-07 | 2010-08-04 | 住友電気工業株式会社 | Iii族窒化物結晶基板、エピ層付iii族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
JP4277826B2 (ja) * | 2005-06-23 | 2009-06-10 | 住友電気工業株式会社 | 窒化物結晶、窒化物結晶基板、エピ層付窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
US9708735B2 (en) | 2005-06-23 | 2017-07-18 | Sumitomo Electric Industries, Ltd. | Group III nitride crystal substrate, epilayer-containing group III nitride crystal substrate, semiconductor device and method of manufacturing the same |
KR100623271B1 (ko) * | 2005-06-24 | 2006-09-12 | 한국과학기술연구원 | 갈륨망간나이트라이드 단결정 나노선의 제조방법 |
JP5638198B2 (ja) * | 2005-07-11 | 2014-12-10 | クリー インコーポレイテッドCree Inc. | ミスカット基板上のレーザダイオード配向 |
US8946674B2 (en) * | 2005-08-31 | 2015-02-03 | University Of Florida Research Foundation, Inc. | Group III-nitrides on Si substrates using a nanostructured interlayer |
JP2007073761A (ja) * | 2005-09-07 | 2007-03-22 | Sumitomo Electric Ind Ltd | 窒化物半導体基板及び窒化物半導体基板の加工方法 |
US9157169B2 (en) * | 2005-09-14 | 2015-10-13 | International Rectifier Corporation | Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
US8425858B2 (en) * | 2005-10-14 | 2013-04-23 | Morpho Detection, Inc. | Detection apparatus and associated method |
US20070086916A1 (en) * | 2005-10-14 | 2007-04-19 | General Electric Company | Faceted structure, article, sensor device, and method |
KR20070042594A (ko) * | 2005-10-19 | 2007-04-24 | 삼성코닝 주식회사 | 편평한 측면을 갖는 a면 질화물 반도체 단결정 기판 |
JP4720441B2 (ja) * | 2005-11-02 | 2011-07-13 | 日立電線株式会社 | 青色発光ダイオード用GaN基板 |
JP2009517329A (ja) * | 2005-11-28 | 2009-04-30 | クリスタル・イズ,インコーポレイテッド | 低欠陥の大きな窒化アルミニウム結晶及びそれを製造する方法 |
US7641735B2 (en) * | 2005-12-02 | 2010-01-05 | Crystal Is, Inc. | Doped aluminum nitride crystals and methods of making them |
JP4631681B2 (ja) * | 2005-12-05 | 2011-02-16 | 日立電線株式会社 | 窒化物系半導体基板及び半導体装置 |
JP4696886B2 (ja) * | 2005-12-08 | 2011-06-08 | 日立電線株式会社 | 自立した窒化ガリウム単結晶基板の製造方法、および窒化物半導体素子の製造方法 |
US7897490B2 (en) * | 2005-12-12 | 2011-03-01 | Kyma Technologies, Inc. | Single crystal group III nitride articles and method of producing same by HVPE method incorporating a polycrystalline layer for yield enhancement |
JP2012134548A (ja) * | 2005-12-28 | 2012-07-12 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の製造方法 |
JP2007197302A (ja) * | 2005-12-28 | 2007-08-09 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶の製造方法および製造装置 |
US9230818B2 (en) * | 2006-02-02 | 2016-01-05 | Trustees Of Boston University | Planarization of GaN by photoresist technique using an inductively coupled plasma |
JP4301251B2 (ja) * | 2006-02-15 | 2009-07-22 | 住友電気工業株式会社 | GaN結晶基板 |
US7518216B2 (en) * | 2006-03-20 | 2009-04-14 | Sumitomo Electric Industries, Ltd. | Gallium nitride baseplate, epitaxial substrate, and method of forming gallium nitride |
GB2436398B (en) * | 2006-03-23 | 2011-08-24 | Univ Bath | Growth method using nanostructure compliant layers and HVPE for producing high quality compound semiconductor materials |
EP2918708B1 (en) * | 2006-03-30 | 2019-10-30 | Crystal Is, Inc. | Method for annealing of aluminium nitride wafer |
US9034103B2 (en) | 2006-03-30 | 2015-05-19 | Crystal Is, Inc. | Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them |
US9255342B2 (en) * | 2006-04-07 | 2016-02-09 | Sixpoint Materials, Inc. | Bismuth-doped semi-insulating group III nitride wafer and its production method |
US8236267B2 (en) | 2008-06-04 | 2012-08-07 | Sixpoint Materials, Inc. | High-pressure vessel for growing group III nitride crystals and method of growing group III nitride crystals using high-pressure vessel and group III nitride crystal |
US8728234B2 (en) * | 2008-06-04 | 2014-05-20 | Sixpoint Materials, Inc. | Methods for producing improved crystallinity group III-nitride crystals from initial group III-nitride seed by ammonothermal growth |
US9834863B2 (en) * | 2006-04-07 | 2017-12-05 | Sixpoint Materials, Inc. | Group III nitride bulk crystals and fabrication method |
US20070240631A1 (en) * | 2006-04-14 | 2007-10-18 | Applied Materials, Inc. | Epitaxial growth of compound nitride semiconductor structures |
US20070243703A1 (en) * | 2006-04-14 | 2007-10-18 | Aonex Technololgies, Inc. | Processes and structures for epitaxial growth on laminate substrates |
CN101443488B (zh) * | 2006-05-08 | 2013-03-27 | 弗赖贝格化合物原料有限公司 | 制备ⅲ-n体晶和自支撑ⅲ-n衬底的方法以及ⅲ-n体晶和自支撑ⅲ-n衬底 |
JP2008010835A (ja) | 2006-05-31 | 2008-01-17 | Sumitomo Electric Ind Ltd | 窒化物結晶の表面処理方法、窒化物結晶基板、エピタキシャル層付窒化物結晶基板および半導体デバイス、ならびにエピタキシャル層付窒化物結晶基板および半導体デバイスの製造方法 |
KR100718118B1 (ko) * | 2006-06-01 | 2007-05-14 | 삼성코닝 주식회사 | 크랙이 없는 GaN 벌크 단결정의 성장 방법 및 장치 |
EP2038456B1 (en) * | 2006-06-09 | 2014-03-05 | Soitec | System and process for high volume deposition of gallium nitride |
JP4816277B2 (ja) * | 2006-06-14 | 2011-11-16 | 日立電線株式会社 | 窒化物半導体自立基板及び窒化物半導体発光素子 |
US7585772B2 (en) * | 2006-07-26 | 2009-09-08 | Freiberger Compound Materials Gmbh | Process for smoothening III-N substrates |
EP2024992B1 (de) * | 2006-07-26 | 2017-03-01 | Freiberger Compound Materials GmbH | Verfahren zum glätten von iii-n-substraten |
US8778078B2 (en) * | 2006-08-09 | 2014-07-15 | Freiberger Compound Materials Gmbh | Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such |
EP2024991B1 (de) * | 2006-08-09 | 2012-10-17 | Freiberger Compound Materials GmbH | Verfahren zur herstellung eines dotierten iii-n-kristalls |
US8222057B2 (en) * | 2006-08-29 | 2012-07-17 | University Of Florida Research Foundation, Inc. | Crack free multilayered devices, methods of manufacture thereof and articles comprising the same |
US8483820B2 (en) * | 2006-10-05 | 2013-07-09 | Bioness Inc. | System and method for percutaneous delivery of electrical stimulation to a target body tissue |
US8647435B1 (en) | 2006-10-11 | 2014-02-11 | Ostendo Technologies, Inc. | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials |
US7776152B2 (en) * | 2006-11-01 | 2010-08-17 | Raytheon Company | Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth |
TWI371870B (en) | 2006-11-08 | 2012-09-01 | Epistar Corp | Alternate current light-emitting device and fabrication method thereof |
WO2008060505A1 (en) * | 2006-11-15 | 2008-05-22 | Cabot Microelectronics Corporation | Methods for polishing aluminum nitride |
EP2083935B1 (en) * | 2006-11-22 | 2012-02-22 | S.O.I.TEC Silicon on Insulator Technologies | Method for epitaxial deposition of a monocrystalline Group III-V semiconductor material |
US20090223441A1 (en) * | 2006-11-22 | 2009-09-10 | Chantal Arena | High volume delivery system for gallium trichloride |
KR101379410B1 (ko) * | 2006-11-22 | 2014-04-11 | 소이텍 | 3-5족 반도체 재료들의 대량생산을 위한 설비 |
JP5244814B2 (ja) | 2006-11-22 | 2013-07-24 | ソイテック | 化学気相成長チャンバ用の温度制御されたパージゲート弁を使用した方法、アセンブリ及びシステム |
KR101426319B1 (ko) * | 2006-12-08 | 2014-08-06 | 쌩-고벵 크리스톡스 에 드테끄퇴르 | 기판의 가장자리에서의 성장을 방지하면서 기판상 에피택셜 성장에 의해 질화물의 단결정을 제조하는 방법 |
JP5125098B2 (ja) * | 2006-12-26 | 2013-01-23 | 信越半導体株式会社 | 窒化物半導体自立基板の製造方法 |
WO2008088838A1 (en) | 2007-01-17 | 2008-07-24 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
US9771666B2 (en) | 2007-01-17 | 2017-09-26 | Crystal Is, Inc. | Defect reduction in seeded aluminum nitride crystal growth |
GB0701069D0 (en) * | 2007-01-19 | 2007-02-28 | Univ Bath | Nanostructure template and production of semiconductors using the template |
CN101652832B (zh) * | 2007-01-26 | 2011-06-22 | 晶体公司 | 厚的赝晶氮化物外延层 |
US8080833B2 (en) | 2007-01-26 | 2011-12-20 | Crystal Is, Inc. | Thick pseudomorphic nitride epitaxial layers |
JP4899911B2 (ja) * | 2007-02-16 | 2012-03-21 | 日立電線株式会社 | Iii族窒化物半導体基板 |
DE102007010286B4 (de) * | 2007-03-02 | 2013-09-05 | Freiberger Compound Materials Gmbh | Verfahren zum Herstellen eines Verbindungshalbleiterwerkstoffs, einer III-N-Schicht oder eines III-N-Bulkkristalls, Reaktor zur Herstellung des Verbindungshalbleiterwerkstoffs, Verbindungshalbleiterwerkstoff, III-N-Bulkkristall und III-N-Kristallschicht |
JP4821007B2 (ja) * | 2007-03-14 | 2011-11-24 | 国立大学法人大阪大学 | Iii族元素窒化物結晶の製造方法およびiii族元素窒化物結晶 |
US7732301B1 (en) | 2007-04-20 | 2010-06-08 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
US20080272377A1 (en) * | 2007-05-02 | 2008-11-06 | Sumitomo Electric Industries, Ltd. | Gallium Nitride Substrate and Gallium Nitride Film Deposition Method |
US8088220B2 (en) * | 2007-05-24 | 2012-01-03 | Crystal Is, Inc. | Deep-eutectic melt growth of nitride crystals |
US20090278233A1 (en) * | 2007-07-26 | 2009-11-12 | Pinnington Thomas Henry | Bonded intermediate substrate and method of making same |
GB2451506B (en) * | 2007-08-02 | 2011-12-28 | Ford Global Tech Llc | An adjustable steering column assembly for a motor vehicle |
US8297061B2 (en) * | 2007-08-02 | 2012-10-30 | Cree, Inc. | Optoelectronic device with upconverting luminophoric medium |
JP4992616B2 (ja) * | 2007-09-03 | 2012-08-08 | 日立電線株式会社 | Iii族窒化物単結晶の製造方法及びiii族窒化物単結晶基板の製造方法 |
US8652947B2 (en) | 2007-09-26 | 2014-02-18 | Wang Nang Wang | Non-polar III-V nitride semiconductor and growth method |
JP4525743B2 (ja) * | 2007-11-30 | 2010-08-18 | 住友電気工業株式会社 | 発光デバイス用iii族窒化物結晶基板ならびに発光デバイスおよびその製造方法 |
JP5391653B2 (ja) * | 2008-01-15 | 2014-01-15 | 住友電気工業株式会社 | 窒化アルミニウム結晶の成長方法および窒化アルミニウム結晶の製造方法 |
JP5353113B2 (ja) * | 2008-01-29 | 2013-11-27 | 豊田合成株式会社 | Iii族窒化物系化合物半導体の製造方法 |
EP2245218B1 (en) * | 2008-02-25 | 2019-06-19 | SixPoint Materials, Inc. | Method for producing group iii nitride wafers and group iii nitride wafers |
JP5053893B2 (ja) * | 2008-03-07 | 2012-10-24 | 住友電気工業株式会社 | 窒化物半導体レーザを作製する方法 |
US8497527B2 (en) * | 2008-03-12 | 2013-07-30 | Sensor Electronic Technology, Inc. | Device having active region with lower electron concentration |
US7781780B2 (en) * | 2008-03-31 | 2010-08-24 | Bridgelux, Inc. | Light emitting diodes with smooth surface for reflective electrode |
US9157167B1 (en) | 2008-06-05 | 2015-10-13 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8871024B2 (en) | 2008-06-05 | 2014-10-28 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8097081B2 (en) | 2008-06-05 | 2012-01-17 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
US8303710B2 (en) * | 2008-06-18 | 2012-11-06 | Soraa, Inc. | High pressure apparatus and method for nitride crystal growth |
WO2011044554A1 (en) * | 2009-10-09 | 2011-04-14 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
WO2010005914A1 (en) * | 2008-07-07 | 2010-01-14 | Soraa, Inc. | High quality large area bulk non-polar or semipolar gallium based substrates and methods |
US9404197B2 (en) | 2008-07-07 | 2016-08-02 | Soraa, Inc. | Large area, low-defect gallium-containing nitride crystals, method of making, and method of use |
US8981427B2 (en) | 2008-07-15 | 2015-03-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polishing of small composite semiconductor materials |
US7915178B2 (en) * | 2008-07-30 | 2011-03-29 | North Carolina State University | Passivation of aluminum nitride substrates |
US8124996B2 (en) * | 2008-08-04 | 2012-02-28 | Soraa, Inc. | White light devices using non-polar or semipolar gallium containing materials and phosphors |
US8284810B1 (en) | 2008-08-04 | 2012-10-09 | Soraa, Inc. | Solid state laser device using a selected crystal orientation in non-polar or semi-polar GaN containing materials and methods |
EP2320465A4 (en) * | 2008-08-05 | 2014-01-22 | Sumitomo Electric Industries | SCHOTTKY DIODE AND MANUFACTURING PROCESS FOR A SCHOTTKY DIODE |
US8323405B2 (en) | 2008-08-07 | 2012-12-04 | Soraa, Inc. | Process and apparatus for growing a crystalline gallium-containing nitride using an azide mineralizer |
US8979999B2 (en) * | 2008-08-07 | 2015-03-17 | Soraa, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8021481B2 (en) | 2008-08-07 | 2011-09-20 | Soraa, Inc. | Process and apparatus for large-scale manufacturing of bulk monocrystalline gallium-containing nitride |
US10036099B2 (en) | 2008-08-07 | 2018-07-31 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of gallium nitride boules |
US8430958B2 (en) | 2008-08-07 | 2013-04-30 | Soraa, Inc. | Apparatus and method for seed crystal utilization in large-scale manufacturing of gallium nitride |
US8148801B2 (en) * | 2008-08-25 | 2012-04-03 | Soraa, Inc. | Nitride crystal with removable surface layer and methods of manufacture |
US7976630B2 (en) | 2008-09-11 | 2011-07-12 | Soraa, Inc. | Large-area seed for ammonothermal growth of bulk gallium nitride and method of manufacture |
US8354679B1 (en) | 2008-10-02 | 2013-01-15 | Soraa, Inc. | Microcavity light emitting diode method of manufacture |
WO2010045567A1 (en) * | 2008-10-16 | 2010-04-22 | Sixpoint Materials, Inc. | Reactor design for growing group iii nitride crystals and method of growing group iii nitride crystals |
US8455894B1 (en) | 2008-10-17 | 2013-06-04 | Soraa, Inc. | Photonic-crystal light emitting diode and method of manufacture |
CN102246284B (zh) | 2008-10-21 | 2014-02-19 | 瑞萨电子株式会社 | 双极晶体管 |
CN102246283B (zh) * | 2008-10-21 | 2014-08-06 | 瑞萨电子株式会社 | 双极晶体管 |
WO2010060034A1 (en) * | 2008-11-24 | 2010-05-27 | Sixpoint Materials, Inc. | METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH |
US8987156B2 (en) | 2008-12-12 | 2015-03-24 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US8461071B2 (en) | 2008-12-12 | 2013-06-11 | Soraa, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US9589792B2 (en) | 2012-11-26 | 2017-03-07 | Soraa, Inc. | High quality group-III metal nitride crystals, methods of making, and methods of use |
US8878230B2 (en) | 2010-03-11 | 2014-11-04 | Soraa, Inc. | Semi-insulating group III metal nitride and method of manufacture |
USRE47114E1 (en) | 2008-12-12 | 2018-11-06 | Slt Technologies, Inc. | Polycrystalline group III metal nitride with getter and method of making |
US9543392B1 (en) | 2008-12-12 | 2017-01-10 | Soraa, Inc. | Transparent group III metal nitride and method of manufacture |
US8313967B1 (en) * | 2009-01-21 | 2012-11-20 | Stc.Unm | Cubic phase, nitrogen-based compound semiconductor films epitaxially grown on a grooved Si <001> substrate |
JP2010180081A (ja) | 2009-02-04 | 2010-08-19 | Sumitomo Electric Ind Ltd | GaN基板およびその製造方法、GaN層接合基板の製造方法、ならびに半導体デバイスの製造方法 |
EP3708631A1 (en) * | 2009-03-13 | 2020-09-16 | Saint-Gobain Ceramics & Plastics Inc. | Chemical mechanical planarization using nanodiamond |
US8299473B1 (en) | 2009-04-07 | 2012-10-30 | Soraa, Inc. | Polarized white light devices using non-polar or semipolar gallium containing materials and transparent phosphors |
WO2010129718A2 (en) | 2009-05-05 | 2010-11-11 | Sixpoint Materials, Inc. | Growth reactor for gallium-nitride crystals using ammonia and hydrogen chloride |
US20100289121A1 (en) * | 2009-05-14 | 2010-11-18 | Eric Hansen | Chip-Level Access Control via Radioisotope Doping |
US8306081B1 (en) | 2009-05-27 | 2012-11-06 | Soraa, Inc. | High indium containing InGaN substrates for long wavelength optical devices |
US9800017B1 (en) | 2009-05-29 | 2017-10-24 | Soraa Laser Diode, Inc. | Laser device and method for a vehicle |
US8509275B1 (en) | 2009-05-29 | 2013-08-13 | Soraa, Inc. | Gallium nitride based laser dazzling device and method |
US9250044B1 (en) | 2009-05-29 | 2016-02-02 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser diode dazzling devices and methods of use |
US9520856B2 (en) | 2009-06-24 | 2016-12-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
JP4924681B2 (ja) * | 2009-09-10 | 2012-04-25 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子、及びiii族窒化物半導体レーザ素子を作製する方法 |
US9583678B2 (en) | 2009-09-18 | 2017-02-28 | Soraa, Inc. | High-performance LED fabrication |
US8435347B2 (en) | 2009-09-29 | 2013-05-07 | Soraa, Inc. | High pressure apparatus with stackable rings |
JP4513927B1 (ja) | 2009-09-30 | 2010-07-28 | 住友電気工業株式会社 | Iii族窒化物半導体基板、エピタキシャル基板及び半導体デバイス |
JP5365454B2 (ja) | 2009-09-30 | 2013-12-11 | 住友電気工業株式会社 | Iii族窒化物半導体基板、エピタキシャル基板及び半導体デバイス |
US9847768B2 (en) * | 2009-11-23 | 2017-12-19 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Polarity determining seed layer and method of fabricating piezoelectric materials with specific C-axis |
JP4793489B2 (ja) * | 2009-12-01 | 2011-10-12 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子を作製する方法 |
US8222052B2 (en) * | 2009-12-01 | 2012-07-17 | The United States Of America As Represented By The Secretary Of The Army | Method for growth of dilute-nitride materials using an isotope for enhancing the sensitivity of resonant nuclear reation analysis |
JP4835749B2 (ja) | 2009-12-18 | 2011-12-14 | 住友電気工業株式会社 | Iii族窒化物結晶基板、エピ層付iii族窒化物結晶基板、ならびに半導体デバイスおよびその製造方法 |
JP5131266B2 (ja) * | 2009-12-25 | 2013-01-30 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子、及びiii族窒化物半導体レーザ素子を作製する方法 |
JP4793494B2 (ja) | 2010-01-18 | 2011-10-12 | 住友電気工業株式会社 | Iii族窒化物半導体レーザ素子を作製する方法 |
JP5561530B2 (ja) * | 2010-03-31 | 2014-07-30 | 古河電気工業株式会社 | 窒化物半導体の炭素ドーピング方法、半導体素子の製造方法 |
US9564320B2 (en) | 2010-06-18 | 2017-02-07 | Soraa, Inc. | Large area nitride crystal and method for making it |
CN105951177B (zh) | 2010-06-30 | 2018-11-02 | 晶体公司 | 使用热梯度控制的大块氮化铝单晶的生长 |
US8729559B2 (en) | 2010-10-13 | 2014-05-20 | Soraa, Inc. | Method of making bulk InGaN substrates and devices thereon |
US20120100650A1 (en) * | 2010-10-26 | 2012-04-26 | The Regents Of The University Of California | Vicinal semipolar iii-nitride substrates to compensate tilt of relaxed hetero-epitaxial layers |
TW201222872A (en) * | 2010-10-26 | 2012-06-01 | Univ California | Limiting strain relaxation in III-nitride heterostructures by substrate and epitaxial layer patterning |
JP2012094700A (ja) * | 2010-10-27 | 2012-05-17 | Toshiba Corp | 半導体発光素子の製造方法及び半導体結晶成長装置 |
US9142413B2 (en) * | 2010-11-08 | 2015-09-22 | Georgia Tech Research Corporation | Methods for growing a non-phase separated group-III nitride semiconductor alloy |
US8786053B2 (en) | 2011-01-24 | 2014-07-22 | Soraa, Inc. | Gallium-nitride-on-handle substrate materials and devices and method of manufacture |
US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
US9099983B2 (en) | 2011-02-28 | 2015-08-04 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator device comprising a bridge in an acoustic reflector |
WO2012120497A1 (en) * | 2011-03-04 | 2012-09-13 | Mosaic Crystals Ltd. | Method for surfactant crystal growth of a metal-nonmetal compound |
US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
US9218962B2 (en) | 2011-05-19 | 2015-12-22 | Globalfoundries Inc. | Low temperature epitaxy of a semiconductor alloy including silicon and germanium employing a high order silane precursor |
WO2012176369A1 (ja) * | 2011-06-24 | 2012-12-27 | パナソニック株式会社 | 窒化ガリウム系半導体発光素子、光源および凹凸構造形成方法 |
US20130000545A1 (en) * | 2011-06-28 | 2013-01-03 | Nitride Solutions Inc. | Device and method for producing bulk single crystals |
US8492185B1 (en) | 2011-07-14 | 2013-07-23 | Soraa, Inc. | Large area nonpolar or semipolar gallium and nitrogen containing substrate and resulting devices |
US8962359B2 (en) | 2011-07-19 | 2015-02-24 | Crystal Is, Inc. | Photon extraction from nitride ultraviolet light-emitting devices |
RU2479892C2 (ru) * | 2011-07-25 | 2013-04-20 | Общество с ограниченной ответственностью "Галлий-Н" | Способ изготовления полупроводниковых светоизлучающих элементов |
JP2013038116A (ja) * | 2011-08-04 | 2013-02-21 | Sumitomo Electric Ind Ltd | Iii族窒化物結晶基板の製造方法 |
JP2013058741A (ja) | 2011-08-17 | 2013-03-28 | Hitachi Cable Ltd | 金属塩化物ガス発生装置、ハイドライド気相成長装置、及び窒化物半導体テンプレート |
US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
JP2013058626A (ja) * | 2011-09-08 | 2013-03-28 | Advanced Power Device Research Association | 半導体基板の製造方法及び半導体装置 |
KR20140048071A (ko) * | 2011-09-12 | 2014-04-23 | 미쓰비시 가가꾸 가부시키가이샤 | 발광 다이오드 소자 |
TWI473283B (zh) * | 2011-09-21 | 2015-02-11 | Nat Univ Tsing Hua | 晶片 |
PL2761642T3 (pl) | 2011-09-29 | 2018-03-30 | Nitride Solutions Inc. | Generator wiązki jonów i sposób wytwarzania kompozycji z wykorzystaniem tego generatora |
EP2761645A4 (en) | 2011-09-30 | 2015-06-10 | Saint Gobain Cristaux Et Detecteurs | GROUP III-V SUPPLY MATERIAL, INCLUDING, IN PARTICULAR, CRYSTALLOGRAPHIC CHARACTERISTICS AND METHOD FOR THE PRODUCTION THEREOF |
US9694158B2 (en) | 2011-10-21 | 2017-07-04 | Ahmad Mohamad Slim | Torque for incrementally advancing a catheter during right heart catheterization |
US10029955B1 (en) | 2011-10-24 | 2018-07-24 | Slt Technologies, Inc. | Capsule for high pressure, high temperature processing of materials and methods of use |
KR101943356B1 (ko) * | 2011-12-14 | 2019-01-29 | 엘지전자 주식회사 | 선택 성장을 이용한 질화물 반도체 소자 및 그 제조 방법 |
US8482104B2 (en) | 2012-01-09 | 2013-07-09 | Soraa, Inc. | Method for growth of indium-containing nitride films |
US9608592B2 (en) | 2014-01-21 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (FBAR) having stress-relief |
SE536605C2 (sv) * | 2012-01-30 | 2014-03-25 | Odling av kiselkarbidkristall i en CVD-reaktor vid användning av klorineringskemi | |
US9002493B2 (en) | 2012-02-21 | 2015-04-07 | Stmicroelectronics, Inc. | Endpoint detector for a semiconductor processing station and associated methods |
JP6091886B2 (ja) | 2012-03-21 | 2017-03-08 | 住友化学株式会社 | 金属塩化物ガス発生装置、ハイドライド気相成長装置及び窒化物半導体テンプレートの製造方法 |
US10145026B2 (en) | 2012-06-04 | 2018-12-04 | Slt Technologies, Inc. | Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules |
JP2014009115A (ja) * | 2012-06-28 | 2014-01-20 | Toyota Industries Corp | 基板製造方法 |
US9275912B1 (en) | 2012-08-30 | 2016-03-01 | Soraa, Inc. | Method for quantification of extended defects in gallium-containing nitride crystals |
RU2507634C1 (ru) * | 2012-09-24 | 2014-02-20 | Федеральное Государственное Унитарное Предприятие "Научно-Производственное Предприятие "Пульсар" | Полупроводниковый прибор и способ его изготовления |
US9299555B1 (en) | 2012-09-28 | 2016-03-29 | Soraa, Inc. | Ultrapure mineralizers and methods for nitride crystal growth |
US9328427B2 (en) * | 2012-09-28 | 2016-05-03 | Sunpower Corporation | Edgeless pulse plating and metal cleaning methods for solar cells |
JP2013126939A (ja) * | 2012-12-14 | 2013-06-27 | Hitachi Cable Ltd | Iii族窒化物半導体基板 |
TWI529964B (zh) | 2012-12-31 | 2016-04-11 | 聖戈班晶體探測器公司 | 具有薄緩衝層的iii-v族基材及其製備方法 |
JP5629340B2 (ja) * | 2013-03-04 | 2014-11-19 | フライベルガー・コンパウンド・マテリアルズ・ゲゼルシャフト・ミット・ベシュレンクテル・ハフツングFreiberger Compound Materials Gmbh | ドープiii−nバルク結晶及び自立型ドープiii−n基板 |
US11721547B2 (en) * | 2013-03-14 | 2023-08-08 | Infineon Technologies Ag | Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device |
US9299880B2 (en) | 2013-03-15 | 2016-03-29 | Crystal Is, Inc. | Pseudomorphic electronic and optoelectronic devices having planar contacts |
US9650723B1 (en) | 2013-04-11 | 2017-05-16 | Soraa, Inc. | Large area seed crystal for ammonothermal crystal growth and method of making |
RU2534442C1 (ru) * | 2013-07-04 | 2014-11-27 | Открытое акционерное общество "Научно-производственное предприятие "Пульсар" | Способ изготовления мощного свч-транзистора |
US8994033B2 (en) * | 2013-07-09 | 2015-03-31 | Soraa, Inc. | Contacts for an n-type gallium and nitrogen substrate for optical devices |
US9574135B2 (en) * | 2013-08-22 | 2017-02-21 | Nanoco Technologies Ltd. | Gas phase enhancement of emission color quality in solid state LEDs |
FR3010228B1 (fr) | 2013-08-30 | 2016-12-30 | St Microelectronics Tours Sas | Procede de traitement d'une couche de nitrure de gallium comportant des dislocations |
US10253432B2 (en) | 2014-01-28 | 2019-04-09 | Sumitomo Chemical Company, Limited | Semiconductor substrate manufacturing method |
US10644116B2 (en) * | 2014-02-06 | 2020-05-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | In-situ straining epitaxial process |
KR102140789B1 (ko) | 2014-02-17 | 2020-08-03 | 삼성전자주식회사 | 결정 품질 평가장치, 및 그것을 포함한 반도체 발광소자의 제조 장치 및 제조 방법 |
FR3019380B1 (fr) * | 2014-04-01 | 2017-09-01 | Centre Nat Rech Scient | Pixel semiconducteur, matrice de tels pixels, structure semiconductrice pour la realisation de tels pixels et leurs procedes de fabrication |
WO2015159342A1 (ja) | 2014-04-14 | 2015-10-22 | 株式会社サイオクス | 窒化物半導体単結晶基板の製造方法 |
JP6328497B2 (ja) * | 2014-06-17 | 2018-05-23 | ソニーセミコンダクタソリューションズ株式会社 | 半導体発光素子、パッケージ素子、および発光パネル装置 |
KR102299362B1 (ko) * | 2014-08-21 | 2021-09-08 | 삼성전자주식회사 | 경사진 c-plane 상의 4성분계 양자우물을 포함하는 그린광 발광소자 |
LU92539B1 (en) * | 2014-09-10 | 2016-03-11 | Luxembourg Inst Of Science And Technology List | Implantable substrate with selective cell adhesion |
FR3029942B1 (fr) * | 2014-12-11 | 2020-12-25 | Saint Gobain Lumilog | Procede de fabrication de plaquettes de nitrure d'element 13 a angle de troncature non nul |
JP6633326B2 (ja) * | 2015-09-15 | 2020-01-22 | 株式会社ディスコ | 窒化ガリウム基板の生成方法 |
CN115020192A (zh) * | 2015-11-12 | 2022-09-06 | 胜高股份有限公司 | Iii族氮化物半导体基板的制造方法及iii族氮化物半导体基板 |
US9917156B1 (en) | 2016-09-02 | 2018-03-13 | IQE, plc | Nucleation layer for growth of III-nitride structures |
US10329455B2 (en) | 2016-09-23 | 2019-06-25 | Saint-Gobain Ceramics & Plastics, Inc. | Chemical mechanical planarization slurry and method for forming same |
US10249786B2 (en) * | 2016-11-29 | 2019-04-02 | Palo Alto Research Center Incorporated | Thin film and substrate-removed group III-nitride based devices and method |
US10921369B2 (en) * | 2017-01-05 | 2021-02-16 | Xcalipr Corporation | High precision optical characterization of carrier transport properties in semiconductors |
US10174438B2 (en) | 2017-03-30 | 2019-01-08 | Slt Technologies, Inc. | Apparatus for high pressure reaction |
US11239637B2 (en) | 2018-12-21 | 2022-02-01 | Kyocera Sld Laser, Inc. | Fiber delivered laser induced white light system |
US11421843B2 (en) | 2018-12-21 | 2022-08-23 | Kyocera Sld Laser, Inc. | Fiber-delivered laser-induced dynamic light system |
US11466384B2 (en) | 2019-01-08 | 2022-10-11 | Slt Technologies, Inc. | Method of forming a high quality group-III metal nitride boule or wafer using a patterned substrate |
US11884202B2 (en) | 2019-01-18 | 2024-01-30 | Kyocera Sld Laser, Inc. | Laser-based fiber-coupled white light system |
US11545272B2 (en) * | 2019-01-31 | 2023-01-03 | Seaborg Aps | Structural material for molten salt reactors |
US11688825B2 (en) * | 2019-01-31 | 2023-06-27 | Industrial Technology Research Institute | Composite substrate and light-emitting diode |
CN113454272B (zh) * | 2019-02-22 | 2024-03-08 | 三菱化学株式会社 | GaN结晶和基板 |
CN110459465B (zh) * | 2019-08-30 | 2022-03-04 | 上海华力微电子有限公司 | 自对准双层图形的形成方法 |
CN114730703A (zh) * | 2019-12-05 | 2022-07-08 | 苏州晶湛半导体有限公司 | 半导体结构及其制作方法 |
US11721549B2 (en) | 2020-02-11 | 2023-08-08 | Slt Technologies, Inc. | Large area group III nitride crystals and substrates, methods of making, and methods of use |
WO2021162727A1 (en) | 2020-02-11 | 2021-08-19 | SLT Technologies, Inc | Improved group iii nitride substrate, method of making, and method of use |
WO2022094283A1 (en) * | 2020-10-30 | 2022-05-05 | The Regents Of The University Of California | Selective-area mesoporous semiconductors and devices for optoelectronic and photonic applications |
CN113085020B (zh) * | 2021-03-31 | 2023-03-31 | 广东工业大学 | 一种织构化氮化硅陶瓷基板及其切割方法和应用 |
WO2023034608A1 (en) * | 2021-09-03 | 2023-03-09 | The Regents Of The University Of California | Iii-nitride-based devices grown on or above a strain compliant template |
Family Cites Families (81)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL6615059A (ja) | 1966-10-25 | 1968-04-26 | ||
US3598526A (en) | 1967-04-27 | 1971-08-10 | Dow Chemical Co | Method for preparing monocrystalline aluminum nitride |
US3607014A (en) | 1968-12-09 | 1971-09-21 | Dow Chemical Co | Method for preparing aluminum nitride and metal fluoride single crystals |
CA1071068A (en) * | 1975-03-19 | 1980-02-05 | Guy-Michel Jacob | Method of manufacturing single crystals by growth from the vapour phase |
US4129463A (en) * | 1977-06-29 | 1978-12-12 | The United States Of America As Represented By The United States Department Of Energy | Polycrystalline silicon semiconducting material by nuclear transmutation doping |
US4397901A (en) * | 1979-07-31 | 1983-08-09 | Warren James W | Composite article and method of making same |
US5411914A (en) * | 1988-02-19 | 1995-05-02 | Massachusetts Institute Of Technology | III-V based integrated circuits having low temperature growth buffer or passivation layers |
FR2629636B1 (fr) * | 1988-04-05 | 1990-11-16 | Thomson Csf | Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant |
US5006914A (en) | 1988-12-02 | 1991-04-09 | Advanced Technology Materials, Inc. | Single crystal semiconductor substrate articles and semiconductor devices comprising same |
US5030583A (en) | 1988-12-02 | 1991-07-09 | Advanced Technolgy Materials, Inc. | Method of making single crystal semiconductor substrate articles and semiconductor device |
CA2037198C (en) | 1990-02-28 | 1996-04-23 | Katsuhide Manabe | Light-emitting semiconductor device using gallium nitride group compound |
JP2623466B2 (ja) * | 1990-02-28 | 1997-06-25 | 豊田合成株式会社 | 窒化ガリウム系化合物半導体発光素子 |
US5204314A (en) | 1990-07-06 | 1993-04-20 | Advanced Technology Materials, Inc. | Method for delivering an involatile reagent in vapor form to a CVD reactor |
US5362328A (en) | 1990-07-06 | 1994-11-08 | Advanced Technology Materials, Inc. | Apparatus and method for delivering reagents in vapor form to a CVD reactor, incorporating a cleaning subsystem |
JPH04334018A (ja) | 1991-05-09 | 1992-11-20 | Nec Corp | 熱処理装置 |
JPH06188163A (ja) * | 1992-12-21 | 1994-07-08 | Toyota Central Res & Dev Lab Inc | 半導体装置作製用SiC単結晶基板とその製造方法 |
CA2113336C (en) * | 1993-01-25 | 2001-10-23 | David J. Larkin | Compound semi-conductors and controlled doping thereof |
JP2749759B2 (ja) * | 1993-06-23 | 1998-05-13 | 信越化学工業株式会社 | 静電チャック付セラミックスヒーター |
JPH0794784A (ja) * | 1993-09-24 | 1995-04-07 | Mitsubishi Cable Ind Ltd | 青色発光素子 |
DE69431333T2 (de) | 1993-10-08 | 2003-07-31 | Mitsubishi Cable Ind Ltd | GaN-Einkristall |
US5679152A (en) | 1994-01-27 | 1997-10-21 | Advanced Technology Materials, Inc. | Method of making a single crystals Ga*N article |
US6958093B2 (en) * | 1994-01-27 | 2005-10-25 | Cree, Inc. | Free-standing (Al, Ga, In)N and parting method for forming same |
US6440823B1 (en) | 1994-01-27 | 2002-08-27 | Advanced Technology Materials, Inc. | Low defect density (Ga, Al, In)N and HVPE process for making same |
JPH07273048A (ja) * | 1994-03-31 | 1995-10-20 | Mitsubishi Cable Ind Ltd | 化合物半導体単結晶の製造方法、該化合物半導体の単結晶および単結晶基板の製造方法 |
US5838029A (en) * | 1994-08-22 | 1998-11-17 | Rohm Co., Ltd. | GaN-type light emitting device formed on a silicon substrate |
US5787104A (en) * | 1995-01-19 | 1998-07-28 | Matsushita Electric Industrial Co., Ltd. | Semiconductor light emitting element and method for fabricating the same |
JPH0927645A (ja) * | 1995-05-08 | 1997-01-28 | Matsushita Electric Ind Co Ltd | 複合基板の製造方法とそれを用いた圧電素子 |
JP3644191B2 (ja) | 1996-06-25 | 2005-04-27 | 住友電気工業株式会社 | 半導体素子 |
US5954874A (en) * | 1996-10-17 | 1999-09-21 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride from a melt |
US5858086A (en) * | 1996-10-17 | 1999-01-12 | Hunter; Charles Eric | Growth of bulk single crystals of aluminum nitride |
US6533874B1 (en) * | 1996-12-03 | 2003-03-18 | Advanced Technology Materials, Inc. | GaN-based devices using thick (Ga, Al, In)N base layers |
US6177292B1 (en) * | 1996-12-05 | 2001-01-23 | Lg Electronics Inc. | Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate |
JP3721674B2 (ja) * | 1996-12-05 | 2005-11-30 | ソニー株式会社 | 窒化物系iii−v族化合物半導体基板の製造方法 |
JP3620683B2 (ja) * | 1996-12-27 | 2005-02-16 | 信越半導体株式会社 | 半導体ウエーハの製造方法 |
JP3139445B2 (ja) * | 1997-03-13 | 2001-02-26 | 日本電気株式会社 | GaN系半導体の成長方法およびGaN系半導体膜 |
JP3416042B2 (ja) * | 1997-03-25 | 2003-06-16 | 三菱電線工業株式会社 | GaN基材及びその製造方法 |
EP0874405A3 (en) * | 1997-03-25 | 2004-09-15 | Mitsubishi Cable Industries, Ltd. | GaN group crystal base member having low dislocation density, use thereof and manufacturing methods thereof |
JPH11191657A (ja) | 1997-04-11 | 1999-07-13 | Nichia Chem Ind Ltd | 窒化物半導体の成長方法及び窒化物半導体素子 |
DE19715572A1 (de) | 1997-04-15 | 1998-10-22 | Telefunken Microelectron | Verfahren zum Herstellen von epitaktischen Schichten eines Verbindungshalbleiters auf einkristallinem Silizium und daraus hergestellte Leuchtdiode |
US6027988A (en) * | 1997-05-28 | 2000-02-22 | The Regents Of The University Of California | Method of separating films from bulk substrates by plasma immersion ion implantation |
JPH10337725A (ja) * | 1997-06-05 | 1998-12-22 | Nitomatsuku Ii R Kk | 硬脆材料の切断方法および半導体シリコンウェハ |
JP2002510275A (ja) * | 1997-07-03 | 2002-04-02 | シービーエル テクノロジーズ | エピタキシャル層中の欠陥の除去 |
JPH1143398A (ja) * | 1997-07-22 | 1999-02-16 | Mitsubishi Cable Ind Ltd | GaN系結晶成長用基板およびその用途 |
US6015979A (en) * | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
CN1175473C (zh) * | 1997-10-30 | 2004-11-10 | 住友电气工业株式会社 | GaN单晶衬底及其制造方法 |
JP4783483B2 (ja) | 1997-11-07 | 2011-09-28 | フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー | 半導体基板および半導体基板の形成方法 |
JPH11163109A (ja) * | 1997-12-01 | 1999-06-18 | Kyocera Corp | ウエハ保持装置 |
JPH11204885A (ja) | 1998-01-08 | 1999-07-30 | Sony Corp | 窒化物系iii−v族化合物半導体層の成長方法および半導体装置の製造方法 |
JPH11209199A (ja) * | 1998-01-26 | 1999-08-03 | Sumitomo Electric Ind Ltd | GaN単結晶の合成方法 |
KR100652909B1 (ko) * | 1998-03-06 | 2006-12-01 | 에이에스엠 아메리카, 인코포레이티드 | 하이 스텝 커버리지를 갖는 실리콘 증착 방법 |
JPH11297631A (ja) * | 1998-04-14 | 1999-10-29 | Matsushita Electron Corp | 窒化物系化合物半導体の成長方法 |
US6064078A (en) * | 1998-05-22 | 2000-05-16 | Xerox Corporation | Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities |
JP3788037B2 (ja) * | 1998-06-18 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板 |
WO1999066565A1 (en) | 1998-06-18 | 1999-12-23 | University Of Florida | Method and apparatus for producing group-iii nitrides |
JP3788041B2 (ja) | 1998-06-30 | 2006-06-21 | 住友電気工業株式会社 | GaN単結晶基板の製造方法 |
TW417315B (en) * | 1998-06-18 | 2001-01-01 | Sumitomo Electric Industries | GaN single crystal substrate and its manufacture method of the same |
JP4005701B2 (ja) * | 1998-06-24 | 2007-11-14 | シャープ株式会社 | 窒素化合物半導体膜の形成方法および窒素化合物半導体素子 |
JP2000044399A (ja) * | 1998-07-24 | 2000-02-15 | Sharp Corp | 窒化ガリウム系化合物半導体のバルク結晶製造方法 |
US6335546B1 (en) * | 1998-07-31 | 2002-01-01 | Sharp Kabushiki Kaisha | Nitride semiconductor structure, method for producing a nitride semiconductor structure, and light emitting device |
GB9826517D0 (en) | 1998-12-02 | 1999-01-27 | Arima Optoelectronics Corp | Semiconductor devices |
US6372041B1 (en) * | 1999-01-08 | 2002-04-16 | Gan Semiconductor Inc. | Method and apparatus for single crystal gallium nitride (GaN) bulk synthesis |
JP3668031B2 (ja) | 1999-01-29 | 2005-07-06 | 三洋電機株式会社 | 窒化物系半導体発光素子の製造方法 |
JP3896718B2 (ja) | 1999-03-02 | 2007-03-22 | 日亜化学工業株式会社 | 窒化物半導体 |
WO2000055893A1 (fr) * | 1999-03-17 | 2000-09-21 | Mitsubishi Cable Industries, Ltd. | Base de semiconducteur et son procede de fabrication et procede de fabrication de cristal semiconducteur |
WO2000068470A1 (en) | 1999-05-07 | 2000-11-16 | Cbl Technologies, Inc. | Magnesium-doped iii-v nitrides & methods |
US6562124B1 (en) * | 1999-06-02 | 2003-05-13 | Technologies And Devices International, Inc. | Method of manufacturing GaN ingots |
US6329088B1 (en) * | 1999-06-24 | 2001-12-11 | Advanced Technology Materials, Inc. | Silicon carbide epitaxial layers grown on substrates offcut towards <1{overscore (1)}00> |
CA2313155C (en) * | 1999-06-30 | 2003-09-30 | Sumitomo Electric Industries, Ltd. | Group iii-v nitride semiconductor growth method and vapor phase growth apparatus |
US6265089B1 (en) * | 1999-07-15 | 2001-07-24 | The United States Of America As Represented By The Secretary Of The Navy | Electronic devices grown on off-axis sapphire substrate |
JP2001144014A (ja) | 1999-11-17 | 2001-05-25 | Ngk Insulators Ltd | エピタキシャル成長用基板およびその製造方法 |
JP3929008B2 (ja) * | 2000-01-14 | 2007-06-13 | シャープ株式会社 | 窒化物系化合物半導体発光素子およびその製造方法 |
JP3865990B2 (ja) * | 2000-01-31 | 2007-01-10 | 株式会社吉野工業所 | 中栓 |
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
US7053413B2 (en) * | 2000-10-23 | 2006-05-30 | General Electric Company | Homoepitaxial gallium-nitride-based light emitting device and method for producing |
US6599362B2 (en) * | 2001-01-03 | 2003-07-29 | Sandia Corporation | Cantilever epitaxial process |
JP3631724B2 (ja) | 2001-03-27 | 2005-03-23 | 日本電気株式会社 | Iii族窒化物半導体基板およびその製造方法 |
JP3696182B2 (ja) | 2001-06-06 | 2005-09-14 | 松下電器産業株式会社 | 半導体レーザ素子 |
US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
JP4097601B2 (ja) | 2001-10-26 | 2008-06-11 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオン | 窒化物半導体レーザ素子、及びその製造方法 |
JP2003327497A (ja) * | 2002-05-13 | 2003-11-19 | Sumitomo Electric Ind Ltd | GaN単結晶基板、窒化物系半導体エピタキシャル基板、窒化物系半導体素子及びその製造方法 |
JP4691911B2 (ja) * | 2004-06-11 | 2011-06-01 | 日立電線株式会社 | Iii−v族窒化物系半導体自立基板の製造方法 |
-
2000
- 2000-03-13 US US09/524,062 patent/US6596079B1/en not_active Expired - Lifetime
-
2001
- 2001-03-12 IL IL15169801A patent/IL151698A0/xx active IP Right Grant
- 2001-03-12 CN CN200810009495.9A patent/CN101307498B/zh not_active Expired - Lifetime
- 2001-03-12 CN CNB018085121A patent/CN100379901C/zh not_active Expired - Lifetime
- 2001-03-12 KR KR1020027012071A patent/KR100767650B1/ko active IP Right Grant
- 2001-03-12 EP EP01920321.5A patent/EP1264011B1/en not_active Expired - Lifetime
- 2001-03-12 JP JP2001567830A patent/JP5542292B2/ja not_active Expired - Lifetime
- 2001-03-12 AU AU2001247389A patent/AU2001247389A1/en not_active Abandoned
- 2001-03-12 MY MYPI20011124A patent/MY122821A/en unknown
- 2001-03-12 EP EP10015291.7A patent/EP2305859B1/en not_active Expired - Lifetime
- 2001-03-12 PL PL01357941A patent/PL357941A1/xx not_active IP Right Cessation
- 2001-03-12 WO PCT/US2001/007945 patent/WO2001068955A1/en active Application Filing
- 2001-03-12 RU RU2002124868/15A patent/RU2272090C2/ru active
- 2001-03-13 TW TW090105850A patent/TWI259513B/zh not_active IP Right Cessation
-
2002
- 2002-09-11 IL IL151698A patent/IL151698A/en unknown
- 2002-12-06 US US10/313,561 patent/US8212259B2/en not_active Expired - Lifetime
-
2003
- 2003-02-19 US US10/369,846 patent/US7655197B2/en not_active Expired - Fee Related
-
2010
- 2010-02-02 US US12/698,144 patent/US7915152B2/en not_active Expired - Fee Related
-
2011
- 2011-10-06 JP JP2011221730A patent/JP5670289B2/ja not_active Expired - Lifetime
-
2014
- 2014-02-20 JP JP2014030490A patent/JP2014133695A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
TWI259513B (en) | 2006-08-01 |
CN101307498A (zh) | 2008-11-19 |
KR20020087414A (ko) | 2002-11-22 |
AU2001247389A1 (en) | 2001-09-24 |
IL151698A0 (en) | 2003-04-10 |
IL151698A (en) | 2006-12-10 |
CN1426497A (zh) | 2003-06-25 |
EP1264011B1 (en) | 2014-01-22 |
PL357941A1 (en) | 2004-08-09 |
US8212259B2 (en) | 2012-07-03 |
JP2014133695A (ja) | 2014-07-24 |
JP5670289B2 (ja) | 2015-02-18 |
US6596079B1 (en) | 2003-07-22 |
US20030157376A1 (en) | 2003-08-21 |
US20100289122A1 (en) | 2010-11-18 |
WO2001068955A1 (en) | 2001-09-20 |
EP2305859A1 (en) | 2011-04-06 |
CN100379901C (zh) | 2008-04-09 |
US7655197B2 (en) | 2010-02-02 |
US7915152B2 (en) | 2011-03-29 |
JP2012017259A (ja) | 2012-01-26 |
US20030213964A1 (en) | 2003-11-20 |
JP2003527296A (ja) | 2003-09-16 |
CN101307498B (zh) | 2014-11-05 |
EP1264011A4 (en) | 2008-08-20 |
MY122821A (en) | 2006-05-31 |
RU2272090C2 (ru) | 2006-03-20 |
EP2305859B1 (en) | 2013-05-08 |
EP1264011A1 (en) | 2002-12-11 |
RU2002124868A (ru) | 2004-03-20 |
KR100767650B1 (ko) | 2007-10-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5542292B2 (ja) | Iii−v族窒化物基板ボウル、並びにiii−v族窒化物基板ボウル製造法及び使用法 | |
JP5361107B2 (ja) | オプトエレクトロニクスデバイスおよびエレクトロニクスデバイス用窒化アルミニウム、インジウム、ガリウム((Al,In,Ga)N)自立基板のエピタキシー品質(表面凹凸および欠陥密度)の改良を実現する方法 | |
US6943095B2 (en) | Low defect density (Ga, A1, In) N and HVPE process for making same | |
US7390581B2 (en) | Vicinal gallium nitride substrate for high quality homoepitaxy | |
JP4741506B2 (ja) | 大面積で均一な低転位密度GaN基板およびその製造プロセス | |
EP1883103A2 (en) | Deposition of group III-nitrides on Ge | |
Kamp | Solutions for heteroepitaxial growth of GaN and their impact on devices | |
Ryou | Gallium nitride (GaN) on sapphire substrates for visible LEDs | |
Hemmingsson et al. | Growth of III-nitrides with halide vapor phase epitaxy (HVPE) | |
JP2008085060A (ja) | 窒化ガリウム系化合物半導体の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20040623 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20040728 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20080310 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20080310 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20100812 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100817 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100908 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110510 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110810 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110817 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20110909 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20110916 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111006 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111101 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120201 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20121106 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130306 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130313 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20130510 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20140128 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20140203 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140220 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140507 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5542292 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |