CN102246284B - 双极晶体管 - Google Patents
双极晶体管 Download PDFInfo
- Publication number
- CN102246284B CN102246284B CN200980150272.7A CN200980150272A CN102246284B CN 102246284 B CN102246284 B CN 102246284B CN 200980150272 A CN200980150272 A CN 200980150272A CN 102246284 B CN102246284 B CN 102246284B
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- China
- Prior art keywords
- layer
- collector
- bipolar transistor
- nitride
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- 239000004065 semiconductor Substances 0.000 claims abstract description 42
- 150000004767 nitrides Chemical class 0.000 claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 40
- 239000013078 crystal Substances 0.000 claims abstract description 30
- 229910002704 AlGaN Inorganic materials 0.000 description 103
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 86
- 229910002601 GaN Inorganic materials 0.000 description 85
- 230000005684 electric field Effects 0.000 description 47
- 230000015556 catabolic process Effects 0.000 description 28
- 230000010287 polarization Effects 0.000 description 27
- 238000009826 distribution Methods 0.000 description 24
- 239000000463 material Substances 0.000 description 22
- 239000010931 gold Substances 0.000 description 16
- 230000000694 effects Effects 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- 239000000203 mixture Substances 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 11
- 238000000576 coating method Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000006911 nucleation Effects 0.000 description 11
- 238000010899 nucleation Methods 0.000 description 11
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 238000005036 potential barrier Methods 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 239000004411 aluminium Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0817—Emitter regions of bipolar transistors of heterojunction bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0821—Collector regions of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/47—Schottky barrier electrodes
- H01L29/475—Schottky barrier electrodes on AIII-BV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (12)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-270884 | 2008-10-21 | ||
JP2008270884 | 2008-10-21 | ||
PCT/JP2009/067909 WO2010047281A1 (ja) | 2008-10-21 | 2009-10-16 | バイポーラトランジスタ |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102246284A CN102246284A (zh) | 2011-11-16 |
CN102246284B true CN102246284B (zh) | 2014-02-19 |
Family
ID=42119322
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200980150272.7A Expired - Fee Related CN102246284B (zh) | 2008-10-21 | 2009-10-16 | 双极晶体管 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8716835B2 (zh) |
JP (1) | JP5628681B2 (zh) |
CN (1) | CN102246284B (zh) |
WO (1) | WO2010047281A1 (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101376221B1 (ko) | 2011-12-08 | 2014-03-21 | 경북대학교 산학협력단 | 질화물 반도체 소자 및 그 소자의 제조 방법 |
KR101321404B1 (ko) * | 2011-12-16 | 2013-10-28 | 경북대학교 산학협력단 | 질화물 반도체 소자 및 그 소자의 제조 방법 |
CN103000674B (zh) * | 2012-12-14 | 2017-04-12 | 复旦大学 | 一种晶体管及其制造方法 |
WO2014089813A1 (zh) * | 2012-12-14 | 2014-06-19 | 复旦大学 | 一种晶体管及其制造方法 |
JP6318474B2 (ja) * | 2013-06-07 | 2018-05-09 | 住友電気工業株式会社 | 半導体装置の製造方法 |
JP6444718B2 (ja) * | 2014-12-15 | 2018-12-26 | 株式会社東芝 | 半導体装置 |
JP6202409B2 (ja) * | 2016-02-04 | 2017-09-27 | 株式会社パウデック | ヘテロ接合バイポーラトランジスタおよび電気機器 |
US20220208998A1 (en) * | 2019-05-29 | 2022-06-30 | Nippon Telegraph And Telephone Corporation | Heterojunction Bipolar Transistor and Manufacturing Method of the Same |
JP2021153149A (ja) * | 2020-03-24 | 2021-09-30 | キオクシア株式会社 | 半導体装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1137688A (zh) * | 1995-04-25 | 1996-12-11 | 富士通株式会社 | 具有减小电阻的化合物半导体器件 |
JP2906407B2 (ja) * | 1987-11-18 | 1999-06-21 | 株式会社日立製作所 | 半導体装置 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2576165B2 (ja) | 1987-11-30 | 1997-01-29 | 日本電気株式会社 | バイポーラトランジスタの製造方法 |
FR2692721B1 (fr) | 1992-06-17 | 1995-06-30 | France Telecom | Procede de realisation de transistor bipolaire a heterojonction et transistor obtenu. |
JP3117831B2 (ja) | 1993-02-17 | 2000-12-18 | シャープ株式会社 | 半導体装置 |
US5689122A (en) | 1995-08-14 | 1997-11-18 | Lucent Technologies Inc. | InP/InGaAs monolithic integrated demultiplexer, photodetector, and heterojunction bipolar transistor |
JP3310514B2 (ja) | 1995-12-22 | 2002-08-05 | シャープ株式会社 | 半導体装置 |
JP3392788B2 (ja) | 1999-08-19 | 2003-03-31 | シャープ株式会社 | 半導体装置 |
FR2803102B1 (fr) | 1999-12-23 | 2002-03-22 | Thomson Csf | Transistor bipolaire a heterojonction a collecteur en haut et procede de realisation |
US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
JP2001308103A (ja) | 2000-04-19 | 2001-11-02 | Sharp Corp | ヘテロ接合バイポーラトランジスタおよびその製造方法 |
US6849874B2 (en) | 2001-10-26 | 2005-02-01 | Cree, Inc. | Minimizing degradation of SiC bipolar semiconductor devices |
JP3573737B2 (ja) | 2002-01-18 | 2004-10-06 | Nec化合物デバイス株式会社 | ヘテロ接合バイポーラ・トランジスタおよび半導体集積回路 |
JP4159828B2 (ja) | 2002-08-26 | 2008-10-01 | 独立行政法人物質・材料研究機構 | 二硼化物単結晶基板、それを用いた半導体レーザダイオード及び半導体装置並びにそれらの製造方法 |
JP2004140339A (ja) | 2002-09-25 | 2004-05-13 | Univ Chiba | 窒化物系ヘテロ構造を有するデバイス及びその製造方法 |
US6806513B2 (en) | 2002-10-08 | 2004-10-19 | Eic Corporation | Heterojunction bipolar transistor having wide bandgap material in collector |
JPWO2004061971A1 (ja) | 2003-01-06 | 2006-05-18 | 日本電信電話株式会社 | p型窒化物半導体構造及びバイポーラトランジスタ |
US7781356B2 (en) | 2003-02-12 | 2010-08-24 | Arizona Board of Regents, a Body Corporate | Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer |
US7414261B2 (en) * | 2003-04-15 | 2008-08-19 | Matsushita Electric Industrial Co., Ltd. | Ballistic semiconductor device |
US20050221515A1 (en) | 2004-03-30 | 2005-10-06 | Katsunori Yanashima | Method for producing semiconductor light emitting device, method for producing semiconductor device, method for producing device, method for growing nitride type III-V group compound semiconductor layer, method for growing semiconductor layer, and method for growing layer |
CA2529595C (en) | 2004-07-01 | 2013-02-26 | Nippon Telegraph And Telephone Corporation | Heterostructure bipolar transistor |
US7339255B2 (en) | 2004-08-24 | 2008-03-04 | Kabushiki Kaisha Toshiba | Semiconductor device having bidirectionally inclined toward <1-100> and <11-20> relative to {0001} crystal planes |
JP2006128554A (ja) | 2004-11-01 | 2006-05-18 | Matsushita Electric Ind Co Ltd | バイポーラトランジスタおよびその製造方法 |
JP4789489B2 (ja) | 2005-03-11 | 2011-10-12 | アンリツ株式会社 | マイクロ波モノリシック集積回路 |
JP2006324465A (ja) * | 2005-05-19 | 2006-11-30 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP4777699B2 (ja) | 2005-06-13 | 2011-09-21 | 本田技研工業株式会社 | バイポーラ型半導体装置およびその製造方法 |
JP2007188991A (ja) | 2006-01-12 | 2007-07-26 | Nippon Telegr & Teleph Corp <Ntt> | バイポーラトランジスタ |
JP2008004779A (ja) | 2006-06-23 | 2008-01-10 | Matsushita Electric Ind Co Ltd | 窒化物半導体バイポーラトランジスタ及び窒化物半導体バイポーラトランジスタの製造方法 |
US7569910B2 (en) | 2006-08-30 | 2009-08-04 | Silicon Storage Technology, Inc. | Multiple-transistor structure systems and methods in which portions of a first transistor and a second transistor are formed from the same layer |
GB2447921B (en) | 2007-03-28 | 2012-01-25 | Rfmd Uk Ltd | A Transistor |
US20090065811A1 (en) | 2007-09-07 | 2009-03-12 | Ping-Chih Chang | Semiconductor Device with OHMIC Contact and Method of Making the Same |
CN102246283B (zh) * | 2008-10-21 | 2014-08-06 | 瑞萨电子株式会社 | 双极晶体管 |
-
2009
- 2009-10-16 JP JP2010534790A patent/JP5628681B2/ja not_active Expired - Fee Related
- 2009-10-16 US US13/124,873 patent/US8716835B2/en active Active
- 2009-10-16 CN CN200980150272.7A patent/CN102246284B/zh not_active Expired - Fee Related
- 2009-10-16 WO PCT/JP2009/067909 patent/WO2010047281A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2906407B2 (ja) * | 1987-11-18 | 1999-06-21 | 株式会社日立製作所 | 半導体装置 |
CN1137688A (zh) * | 1995-04-25 | 1996-12-11 | 富士通株式会社 | 具有减小电阻的化合物半导体器件 |
Non-Patent Citations (4)
Title |
---|
JP平1-144681A 1989.06.06 |
JP特开2006-253503A 2006.09.21 |
JP特开2007-188991A 2007.07.26 |
JP第2906407号B2 1999.04.02 |
Also Published As
Publication number | Publication date |
---|---|
CN102246284A (zh) | 2011-11-16 |
US8716835B2 (en) | 2014-05-06 |
US20110278586A1 (en) | 2011-11-17 |
WO2010047281A1 (ja) | 2010-04-29 |
JPWO2010047281A1 (ja) | 2012-03-22 |
JP5628681B2 (ja) | 2014-11-19 |
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