JP5978269B2 - トランジスタ素子およびその製造方法 - Google Patents
トランジスタ素子およびその製造方法 Download PDFInfo
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- JP5978269B2 JP5978269B2 JP2014185987A JP2014185987A JP5978269B2 JP 5978269 B2 JP5978269 B2 JP 5978269B2 JP 2014185987 A JP2014185987 A JP 2014185987A JP 2014185987 A JP2014185987 A JP 2014185987A JP 5978269 B2 JP5978269 B2 JP 5978269B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 230000004888 barrier function Effects 0.000 claims description 120
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 88
- 229910052738 indium Inorganic materials 0.000 claims description 87
- 239000002243 precursor Substances 0.000 claims description 39
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 20
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 claims description 19
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 17
- 229910002601 GaN Inorganic materials 0.000 claims description 16
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 13
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 13
- 229910021529 ammonia Inorganic materials 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 7
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 239000010936 titanium Substances 0.000 description 9
- 239000010931 gold Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004627 transmission electron microscopy Methods 0.000 description 2
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical compound CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000000779 depleting effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/452—Ohmic electrodes on AIII-BV compounds
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Description
Claims (22)
- チャネル層と、
前記チャネル層上のコンタクト兼バリア層であって、その表面に複数のインジウム凝集体を露出させたインジウムアルミニウムナイトライドを含むコンタクト兼バリア層と、
を備えたトランジスタ素子。 - 前記コンタクト兼バリア層は、エピタキシャル層である請求項1記載のトランジスタ素子。
- 前記複数のインジウム凝集体のうちの少なくとも1つに接触した前記コンタクト兼バリア層上の少なくとも1つの金属コンタクトを備えた請求項1または2に記載のトランジスタ素子。
- 前記チャネル層は、窒化ガリウムである請求項1〜3のいずれか1つに記載のトランジスタ素子。
- 前記複数のインジウム凝集体は、前記コンタクト兼バリア層の表面下に延在する請求項1〜4のいずれか1つに記載のトランジスタ素子。
- 前記複数のインジウム凝集体は、前記コンタクト兼バリア層の表面に不規則に分布する請求項1〜5のいずれか1つに記載のトランジスタ素子。
- 前記複数のインジウム凝集体は、前記コンタクト兼バリア層の表面において、それぞれ10ナノメートル以上、350ナノメートル以下の範囲の直径を有する請求項1〜6のいずれか1つに記載のトランジスタ素子。
- 前記コンタクト兼バリア層は、インジウム凝集体を含まない下層と、その表面に複数のインジウム凝集体を露出させた上層と、を含む請求項1〜7のいずれか1つに記載のトランジスタ素子。
- 前記下層は、前記上層よりも厚い請求項8記載のトランジスタ素子。
- 基板と、
前記基板と、前記チャネル層と、の間のバッファ層と、
をさらに備えた請求項1〜9のいずれか1つに記載のトランジスタ素子。 - 前記コンタクト兼バリア層上の絶縁層と、
前記絶縁層上のゲート構造と、
をさらに備えた請求項1〜10のいずれか1つに記載のトランジスタ素子。 - チャネル層を形成し、
複数のインジウム凝集体をインジウムアルミニウムナイトライドの表面に露出させる成長条件を用いて、コンタクト兼バリア層を前記チャネル層上に形成するトランジスタ素子の製造方法。 - 前記コンタクト兼バリア層の形成は、3族前駆体の流量に対する5族前駆体の流量の比が窒化インジウムを形成するための3族前駆体の流量に対する5族前駆体の流量の比よりも小さく、インジウム前駆体の流量がアルミニウム前駆体の流量よりも多いMOCVD法を用いたインジウムアルミニウムナイトライドのエピタキシャル成長を含む請求項12記載のトランジスタ素子の製造方法。
- 前記コンタクト兼バリア層の形成は、3族前駆体の流量に対する5族前駆体の流量の比が1400以下であり、インジウム前駆体の流量がアルミニウム前駆体の流量の4倍よりも多いMOCVD法を用いたインジウムアルミニウムナイトライドのエピタキシャル成長を含む請求項12記載のトランジスタ素子の製造方法。
- 前記コンタクト兼バリア層の形成は、3族前駆体の流量に対する5族前駆体の流量の比が1404.2であり、インジウム前駆体の流量がアルミニウム前駆体の流量の4.5倍であるMOCVD法を用いたインジウムアルミニウムナイトライドのエピタキシャル成長を含む請求項12記載のトランジスタ素子の製造方法。
- 前記コンタクト兼バリア層の形成は、3族前駆体の流量に対する5族前駆体の流量の比が1404.2であり、アンモニアの流量が2.23×105μmol/min、トリメチルアルミニウムの流量が29.0μmol/min、および、トリメチルインジウムの流量が129.8μmol/minであるMOCVD法を用いたインジウムアルミニウムナイトライドのエピタキシャル成長を含む請求項12記載のトランジスタ素子の製造方法。
- 前記複数のインジウム凝集体のうちの少なくとも1つに接する少なくとも1つの金属コンタクトを前記コンタクト兼バリア層上に形成することをさらに備える請求項12〜16のいずれか1つに記載のトランジスタ素子の製造方法。
- 前記チャネル層の形成は、窒化ガリウム層のエピタキシャル成長を含む請求項12〜17のいずれか1つに記載のトランジスタ素子の製造方法。
- 前記コンタクト兼バリア層の形成は、インジウム凝集体が形成されない第1の成長条件により、インジウムアルミニウムナイトライドの第1の部分を形成し、
前記複数のインジウム凝集体を露出させる第2の成長条件により、インジウムアルミニウムナイトライドの第2部分を形成することを含む請求項12〜18のいずれか1つに記載のトランジスタ素子の製造方法。 - 前記第1部分を前記第2部分よりも厚く形成する請求項19記載のトランジスタ素子の製造方法。
- 前記第2部分の厚さは、100オングストローム以上である請求項20記載のトランジスタ素子の製造方法。
- 前記第1部分の厚さは、前記コンタクト兼バリア層の全厚さの3分の2であり、
前記第2部分の厚さは、前記コンタクト兼バリア層の全厚さの3分の1である請求項20または21に記載のトランジスタ素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US14/203,165 US20150255589A1 (en) | 2014-03-10 | 2014-03-10 | Indium-containing contact and barrier layer for iii-nitride high electron mobility transistor devices |
US14/203,165 | 2014-03-10 |
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JP2015170850A JP2015170850A (ja) | 2015-09-28 |
JP5978269B2 true JP5978269B2 (ja) | 2016-08-24 |
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RU2673515C2 (ru) * | 2017-02-02 | 2018-11-27 | Общество С Ограниченной Ответственностью "Монолюм" | Способ подачи газов в реактор для выращивания эпитаксиальных структур на основе нитридов металлов iii группы и устройство для его осуществления |
WO2019066973A1 (en) * | 2017-09-29 | 2019-04-04 | Intel Corporation | REDUCED CONTACT RESISTANCE GROUP III (N-N) NITRIDE DEVICES AND METHODS OF MAKING THE SAME |
US11569182B2 (en) | 2019-10-22 | 2023-01-31 | Analog Devices, Inc. | Aluminum-based gallium nitride integrated circuits |
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US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7943949B2 (en) * | 2004-09-09 | 2011-05-17 | Bridgelux, Inc. | III-nitride based on semiconductor device with low-resistance ohmic contacts |
JP4939014B2 (ja) * | 2005-08-30 | 2012-05-23 | 国立大学法人徳島大学 | Iii族窒化物半導体発光素子およびiii族窒化物半導体発光素子の製造方法 |
JP5313457B2 (ja) * | 2007-03-09 | 2013-10-09 | パナソニック株式会社 | 窒化物半導体装置及びその製造方法 |
US8384129B2 (en) * | 2009-06-25 | 2013-02-26 | The United States Of America, As Represented By The Secretary Of The Navy | Transistor with enhanced channel charge inducing material layer and threshold voltage control |
JP5702058B2 (ja) * | 2009-08-28 | 2015-04-15 | 日本碍子株式会社 | 半導体素子用エピタキシャル基板、半導体素子、および、半導体素子用エピタキシャル基板の作製方法 |
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2014
- 2014-03-10 US US14/203,165 patent/US20150255589A1/en not_active Abandoned
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