JP5478574B2 - 表示装置、表示モジュール及び電子機器 - Google Patents

表示装置、表示モジュール及び電子機器 Download PDF

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Publication number
JP5478574B2
JP5478574B2 JP2011192366A JP2011192366A JP5478574B2 JP 5478574 B2 JP5478574 B2 JP 5478574B2 JP 2011192366 A JP2011192366 A JP 2011192366A JP 2011192366 A JP2011192366 A JP 2011192366A JP 5478574 B2 JP5478574 B2 JP 5478574B2
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Prior art keywords
electrode layer
layer
film
spacer
insulating layer
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Expired - Fee Related
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JP2011192366A
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Japanese (ja)
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JP2012033497A (ja
Inventor
舜平 山崎
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/842—Containers
    • H10K50/8428—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/22—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of auxiliary dielectric or reflective layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6731—Top-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/874—Passivation; Containers; Encapsulations including getter material or desiccant
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Thin Film Transistor (AREA)
JP2011192366A 2004-09-29 2011-09-05 表示装置、表示モジュール及び電子機器 Expired - Fee Related JP5478574B2 (ja)

Priority Applications (1)

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JP2011192366A JP5478574B2 (ja) 2004-09-29 2011-09-05 表示装置、表示モジュール及び電子機器

Applications Claiming Priority (3)

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JP2004284940 2004-09-29
JP2004284940 2004-09-29
JP2011192366A JP5478574B2 (ja) 2004-09-29 2011-09-05 表示装置、表示モジュール及び電子機器

Related Parent Applications (1)

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JP2005279058A Division JP4879541B2 (ja) 2004-09-29 2005-09-27 表示装置の作製方法

Related Child Applications (2)

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JP2012083531A Division JP2012151124A (ja) 2004-09-29 2012-04-02 表示装置、表示モジュール及び電子機器
JP2012097639A Division JP2012160475A (ja) 2004-09-29 2012-04-23 表示装置

Publications (2)

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JP2012033497A JP2012033497A (ja) 2012-02-16
JP5478574B2 true JP5478574B2 (ja) 2014-04-23

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ID=36936149

Family Applications (13)

Application Number Title Priority Date Filing Date
JP2011192366A Expired - Fee Related JP5478574B2 (ja) 2004-09-29 2011-09-05 表示装置、表示モジュール及び電子機器
JP2012083531A Withdrawn JP2012151124A (ja) 2004-09-29 2012-04-02 表示装置、表示モジュール及び電子機器
JP2012097639A Withdrawn JP2012160475A (ja) 2004-09-29 2012-04-23 表示装置
JP2014151600A Expired - Lifetime JP5836447B2 (ja) 2004-09-29 2014-07-25 半導体装置、表示モジュール及び電子機器
JP2014157270A Expired - Lifetime JP5976734B2 (ja) 2004-09-29 2014-08-01 表示装置
JP2015106998A Withdrawn JP2015149309A (ja) 2004-09-29 2015-05-27 表示装置
JP2016227336A Withdrawn JP2017037857A (ja) 2004-09-29 2016-11-23 表示装置
JP2017241765A Withdrawn JP2018085338A (ja) 2004-09-29 2017-12-18 表示装置
JP2019070468A Expired - Lifetime JP6876739B2 (ja) 2004-09-29 2019-04-02 表示装置
JP2020150976A Expired - Lifetime JP7117353B2 (ja) 2004-09-29 2020-09-09 発光装置
JP2021180550A Expired - Lifetime JP7368438B2 (ja) 2004-09-29 2021-11-04 表示装置
JP2022200848A Expired - Lifetime JP7440601B2 (ja) 2004-09-29 2022-12-16 表示装置
JP2023204055A Withdrawn JP2024023508A (ja) 2004-09-29 2023-12-01 表示装置

Family Applications After (12)

Application Number Title Priority Date Filing Date
JP2012083531A Withdrawn JP2012151124A (ja) 2004-09-29 2012-04-02 表示装置、表示モジュール及び電子機器
JP2012097639A Withdrawn JP2012160475A (ja) 2004-09-29 2012-04-23 表示装置
JP2014151600A Expired - Lifetime JP5836447B2 (ja) 2004-09-29 2014-07-25 半導体装置、表示モジュール及び電子機器
JP2014157270A Expired - Lifetime JP5976734B2 (ja) 2004-09-29 2014-08-01 表示装置
JP2015106998A Withdrawn JP2015149309A (ja) 2004-09-29 2015-05-27 表示装置
JP2016227336A Withdrawn JP2017037857A (ja) 2004-09-29 2016-11-23 表示装置
JP2017241765A Withdrawn JP2018085338A (ja) 2004-09-29 2017-12-18 表示装置
JP2019070468A Expired - Lifetime JP6876739B2 (ja) 2004-09-29 2019-04-02 表示装置
JP2020150976A Expired - Lifetime JP7117353B2 (ja) 2004-09-29 2020-09-09 発光装置
JP2021180550A Expired - Lifetime JP7368438B2 (ja) 2004-09-29 2021-11-04 表示装置
JP2022200848A Expired - Lifetime JP7440601B2 (ja) 2004-09-29 2022-12-16 表示装置
JP2023204055A Withdrawn JP2024023508A (ja) 2004-09-29 2023-12-01 表示装置

Country Status (4)

Country Link
US (12) US7753751B2 (enExample)
JP (13) JP5478574B2 (enExample)
KR (4) KR101221341B1 (enExample)
CN (2) CN1825616B (enExample)

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US7753751B2 (en) 2004-09-29 2010-07-13 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating the display device
US8772783B2 (en) * 2004-10-14 2014-07-08 Semiconductor Energy Laboratory Co., Ltd. Display device
TWI460851B (zh) 2005-10-17 2014-11-11 Semiconductor Energy Lab 半導體裝置及其製造方法
JP4533392B2 (ja) * 2006-03-22 2010-09-01 キヤノン株式会社 有機発光装置
US7736936B2 (en) 2006-08-29 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Method of forming display device that includes removing mask to form opening in insulating film
KR100796618B1 (ko) * 2007-01-04 2008-01-22 삼성에스디아이 주식회사 유기전계발광표시장치 및 그의 제조방법
TW200834607A (en) * 2007-02-15 2008-08-16 Univ Nat Taiwan Nano zinc oxide organic and inorganic composite film, fabrication method, and electro-luminescent components using the composite film thereof
KR100924137B1 (ko) * 2008-01-31 2009-10-29 삼성모바일디스플레이주식회사 유기전계발광표시장치 및 그의 제조방법
KR101453878B1 (ko) * 2008-08-07 2014-10-23 삼성디스플레이 주식회사 평판 표시장치의 제조방법
JP5498762B2 (ja) * 2008-11-17 2014-05-21 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
KR101702329B1 (ko) 2008-12-17 2017-02-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
TWI607670B (zh) 2009-01-08 2017-12-01 半導體能源研究所股份有限公司 發光裝置及電子裝置
KR101681884B1 (ko) * 2009-03-27 2016-12-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치, 표시장치 및 전자기기
US8911653B2 (en) 2009-05-21 2014-12-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
US8383434B2 (en) * 2010-02-22 2013-02-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and manufacturing method thereof
TWI429326B (zh) 2010-11-10 2014-03-01 Au Optronics Corp 發光裝置及其製造方法
US8669702B2 (en) * 2010-11-19 2014-03-11 Semiconductor Energy Laboratory Co., Ltd. Lighting device
CN102110707B (zh) * 2010-11-23 2013-07-03 友达光电股份有限公司 发光装置及其制造方法
US8476622B2 (en) * 2011-01-05 2013-07-02 Electronics And Telecommunications Research Institute Active matrix organic light emitting diode
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