KR20110084857A - 액티브 매트릭스 표시 장치 - Google Patents
액티브 매트릭스 표시 장치 Download PDFInfo
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- KR20110084857A KR20110084857A KR1020110056201A KR20110056201A KR20110084857A KR 20110084857 A KR20110084857 A KR 20110084857A KR 1020110056201 A KR1020110056201 A KR 1020110056201A KR 20110056201 A KR20110056201 A KR 20110056201A KR 20110084857 A KR20110084857 A KR 20110084857A
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Abstract
본 발명은 화소 영역에서의 화소전극층 상, 및 화소전극층 주변을 덮는 격벽으로서 기능하는 절연층 상에, 스페이서를 갖는다. 이 스페이서에 의해서, 발광재료를 화소전극층 상에 형성할 때, 선택적으로 형성하기 위한 마스크는 지지되고, 마스크의 비틀림이나 휘어짐 등에 의해서 화소전극층에 접하는 것을 방지한다. 따라서, 화소전극층에는 마스크에 의한 상처 등의 손상이 생기지 않고, 화소전극층은 형상 불량으로 되지 않기 때문에, 매우 섬세한 표시를 하는 고신뢰성의 표시장치를 제작할 수 있다.
Description
도 2는 본 발명의 표시장치의 제작방법을 설명하는 도면.
도 3은 본 발명의 표시장치의 제작방법을 설명하는 도면.
도 4는 본 발명의 표시장치의 제작방법을 설명하는 도면.
도 5는 본 발명의 표시장치의 제작방법을 설명하는 도면.
도 6은 본 발명의 표시장치의 제작방법을 설명하는 도면.
도 7은 본 발명의 표시장치의 제작방법을 설명하는 도면.
도 8은 본 발명의 표시장치를 설명하는 도면.
도 9는 본 발명의 표시장치를 설명하는 도면.
도 10은 본 발명의 표시장치를 설명하는 도면.
도 11은 본 발명의 표시장치를 설명하는 도면.
도 12는 본 발명의 표시장치를 설명하는 도면.
도 13은 본 발명에 적용할 수 있는 발광소자의 구성을 설명하는 도면.
도 14는 도 15에서 설명하는 EL 표시장치의 등가회로도.
도 15는 본 발명의 표시장치를 설명하는 상면도.
도 16은 본 발명의 표시장치의 상면도.
도 17은 본 발명의 표시장치의 상면도.
도 18은 본 발명의 표시장치의 상면도.
도 19는 본 발명에 적용할 수 있는 적하주입법을 설명하는 도면.
도 20은 본 발명이 적용되는 전자기기를 도시하는 도면.
도 21은 본 발명이 적용되는 전자기기를 도시하는 도면.
도 22는 본 발명이 적용되는 전자기기를 도시하는 도면.
도 23은 본 발명이 적용되는 전자기기를 도시하는 도면.
도 24는 본 발명의 표시장치를 설명하는 도면.
도 25는 본 발명의 표시장치의 상면도.
도 26은 본 발명의 표시장치의 상면도.
도 27은 본 발명의 표시장치의 상면도.
도 28은 본 발명의 표시장치를 설명하는 도면.
도 29는 본 발명의 표시장치의 제작방법을 설명하는 도면.
도 30은 본 발명의 표시장치의 상면도.
도 31은 본 발명의 표시장치를 설명하는 도면.
도 32는 본 발명의 표시장치의 제작방법을 설명하는 도면.
도 33은 본 발명의 표시장치의 상면도.
도 34는 본 발명의 표시장치의 상면도.
도 35는 본 발명의 표시장치를 설명하는 도면.
202...접속영역 203...배선영역
204...주변 구동회로 영역 205...접속영역
206...화소 영역
Claims (1)
- 제 1 기판 위의 스위칭 소자;
상기 스위칭 소자 위의 제 1 절연층;
상기 제 1 절연층 위에서 상기 스위칭 소자에 전기적으로 접속되는 화소 전극;
상기 화소 전극의 단부를 덮기 위한 제 2 절연층;
상기 제 2 절연층 위의 스페이서(spacer);
상기 화소 전극 위의 유기 재료를 포함하는 발광층;
상기 발광층 위의 제 2 전극; 및
상기 제 2 전극 위의 제 2 기판을 포함하고,
상기 제 2 기판은 상기 제 1 기판에 고정되는 액티브 매트릭스 표시 장치.
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KR1020050091153A Division KR101221341B1 (ko) | 2004-09-29 | 2005-09-29 | 표시장치, 전자기기, 및 그 표시장치의 제작방법 |
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KR1020110056201A KR101125523B1 (ko) | 2004-09-29 | 2011-06-10 | 액티브 매트릭스 표시 장치 |
KR1020120045513A KR101363886B1 (ko) | 2004-09-29 | 2012-04-30 | 액티브 매트릭스형 표시장치 |
KR1020130101335A KR101362691B1 (ko) | 2004-09-29 | 2013-08-26 | 액티브 매트릭스형 표시장치 |
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KR1020130101335A KR101362691B1 (ko) | 2004-09-29 | 2013-08-26 | 액티브 매트릭스형 표시장치 |
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US (12) | US7753751B2 (ko) |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9337244B2 (en) | 2011-02-25 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device using light-emitting device |
US9929220B2 (en) | 2009-01-08 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
Families Citing this family (108)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20010030511A1 (en) | 2000-04-18 | 2001-10-18 | Shunpei Yamazaki | Display device |
US8350466B2 (en) | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
US8772783B2 (en) * | 2004-10-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI460851B (zh) | 2005-10-17 | 2014-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
JP4533392B2 (ja) * | 2006-03-22 | 2010-09-01 | キヤノン株式会社 | 有機発光装置 |
US7736936B2 (en) | 2006-08-29 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of forming display device that includes removing mask to form opening in insulating film |
KR100796618B1 (ko) * | 2007-01-04 | 2008-01-22 | 삼성에스디아이 주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
TW200834607A (en) * | 2007-02-15 | 2008-08-16 | Univ Nat Taiwan | Nano zinc oxide organic and inorganic composite film, fabrication method, and electro-luminescent components using the composite film thereof |
KR100924137B1 (ko) * | 2008-01-31 | 2009-10-29 | 삼성모바일디스플레이주식회사 | 유기전계발광표시장치 및 그의 제조방법 |
KR101453878B1 (ko) * | 2008-08-07 | 2014-10-23 | 삼성디스플레이 주식회사 | 평판 표시장치의 제조방법 |
JP5498762B2 (ja) * | 2008-11-17 | 2014-05-21 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法 |
KR101702329B1 (ko) | 2008-12-17 | 2017-02-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
KR101681884B1 (ko) * | 2009-03-27 | 2016-12-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치, 표시장치 및 전자기기 |
US8911653B2 (en) | 2009-05-21 | 2014-12-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing light-emitting device |
US8383434B2 (en) * | 2010-02-22 | 2013-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor and manufacturing method thereof |
TWI429326B (zh) | 2010-11-10 | 2014-03-01 | Au Optronics Corp | 發光裝置及其製造方法 |
US8669702B2 (en) * | 2010-11-19 | 2014-03-11 | Semiconductor Energy Laboratory Co., Ltd. | Lighting device |
CN102110707B (zh) * | 2010-11-23 | 2013-07-03 | 友达光电股份有限公司 | 发光装置及其制造方法 |
US8476622B2 (en) * | 2011-01-05 | 2013-07-02 | Electronics And Telecommunications Research Institute | Active matrix organic light emitting diode |
KR101894898B1 (ko) | 2011-02-11 | 2018-09-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 사용한 전자 기기 |
US8957442B2 (en) | 2011-02-11 | 2015-02-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and display device |
WO2012108482A1 (en) | 2011-02-11 | 2012-08-16 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and display device |
TWI647973B (zh) | 2011-02-11 | 2019-01-11 | 日商半導體能源研究所股份有限公司 | 發光元件、發光裝置以及顯示裝置 |
JP5820295B2 (ja) | 2011-02-21 | 2015-11-24 | 株式会社半導体エネルギー研究所 | 照明装置 |
JP2012199231A (ja) | 2011-03-04 | 2012-10-18 | Semiconductor Energy Lab Co Ltd | 表示装置 |
KR20120103970A (ko) * | 2011-03-11 | 2012-09-20 | 삼성디스플레이 주식회사 | 유기전계발광 표시장치 |
TWI562424B (en) | 2011-03-25 | 2016-12-11 | Semiconductor Energy Lab Co Ltd | Light-emitting panel, light-emitting device, and method for manufacturing the light-emitting panel |
JP5919807B2 (ja) | 2011-03-30 | 2016-05-18 | ソニー株式会社 | 有機発光素子、有機発光素子の製造方法および表示装置 |
KR101960759B1 (ko) | 2011-04-08 | 2019-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치, 전자 기기, 및 조명 장치 |
KR101920374B1 (ko) | 2011-04-27 | 2018-11-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 그 제작 방법 |
KR101917752B1 (ko) | 2011-05-11 | 2018-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 모듈, 발광 패널, 발광 장치 |
JP5978625B2 (ja) * | 2011-06-07 | 2016-08-24 | ソニー株式会社 | 放射線撮像装置、放射線撮像表示システムおよびトランジスタ |
JP2013030467A (ja) | 2011-06-24 | 2013-02-07 | Semiconductor Energy Lab Co Ltd | 発光装置および発光装置の作製方法 |
WO2013008765A1 (en) | 2011-07-08 | 2013-01-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting module, light-emitting device, and method for manufacturing the light-emitting module |
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KR102037700B1 (ko) * | 2012-05-23 | 2019-10-30 | 삼성디스플레이 주식회사 | 휴대형 표시 장치 및 그의 조립 방법 |
KR102022698B1 (ko) | 2012-05-31 | 2019-11-05 | 삼성디스플레이 주식회사 | 표시 패널 |
JP6302186B2 (ja) | 2012-08-01 | 2018-03-28 | 株式会社半導体エネルギー研究所 | 表示装置 |
JP6204012B2 (ja) | 2012-10-17 | 2017-09-27 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6076683B2 (ja) | 2012-10-17 | 2017-02-08 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6155020B2 (ja) | 2012-12-21 | 2017-06-28 | 株式会社半導体エネルギー研究所 | 発光装置及びその製造方法 |
JP6216125B2 (ja) | 2013-02-12 | 2017-10-18 | 株式会社半導体エネルギー研究所 | 発光装置 |
JP6429465B2 (ja) * | 2013-03-07 | 2018-11-28 | 株式会社半導体エネルギー研究所 | 装置及びその作製方法 |
JP6104649B2 (ja) | 2013-03-08 | 2017-03-29 | 株式会社半導体エネルギー研究所 | 発光装置 |
TWI612689B (zh) | 2013-04-15 | 2018-01-21 | 半導體能源研究所股份有限公司 | 發光裝置 |
WO2014179324A1 (en) * | 2013-04-30 | 2014-11-06 | John Moore | Release layer for subsequent manufacture of flexible substrates in microelectonic applications |
KR102080008B1 (ko) * | 2013-07-12 | 2020-02-24 | 삼성디스플레이 주식회사 | 유기발광표시장치 및 그 제조방법 |
US9614021B2 (en) | 2013-07-24 | 2017-04-04 | Samsung Display Co., Ltd. | Organic light-emitting display apparatus and manufacturing method thereof |
US9269914B2 (en) * | 2013-08-01 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, electronic device, and lighting device |
KR102081288B1 (ko) * | 2013-08-08 | 2020-02-26 | 삼성디스플레이 주식회사 | 유기발광 디스플레이 장치 및 그 제조방법 |
CN103531725A (zh) * | 2013-10-16 | 2014-01-22 | 上海和辉光电有限公司 | 电激发光组件及其封装方法 |
KR102132697B1 (ko) * | 2013-12-05 | 2020-07-10 | 엘지디스플레이 주식회사 | 휘어진 디스플레이 장치 |
JP2017500186A (ja) * | 2013-12-16 | 2017-01-05 | サビック グローバル テクノロジーズ ビー.ブイ. | Uvおよび熱処理された高分子膜 |
US9978986B2 (en) * | 2014-03-13 | 2018-05-22 | Pioneer Corporation | Light emitting apparatus |
EP3671883A1 (en) * | 2014-06-25 | 2020-06-24 | LG Display Co., Ltd. | Organic light emitting display apparatus |
JP2016018734A (ja) * | 2014-07-10 | 2016-02-01 | 株式会社ジャパンディスプレイ | 表示装置及びその製造方法 |
TWI683169B (zh) | 2014-07-25 | 2020-01-21 | 日商半導體能源研究所股份有限公司 | 堆疊結構體、輸入/輸出裝置、資訊處理裝置及堆疊結構體的製造方法 |
KR102377360B1 (ko) | 2014-08-08 | 2022-03-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 소자, 발광 장치, 조명 장치, 표시 장치, 디스플레이 패널, 전자 기기 |
KR102343768B1 (ko) * | 2014-08-14 | 2021-12-24 | 에스케이넥실리스 주식회사 | 배리어 필름 구조체 및 이를 구비하는 유기전자소자 |
CN104216161B (zh) * | 2014-08-22 | 2018-06-05 | 京东方科技集团股份有限公司 | 一种显示装置 |
KR102375250B1 (ko) * | 2014-09-04 | 2022-03-15 | 엘지디스플레이 주식회사 | 터치 스크린 일체형 유기 발광 표시 장치 및 터치 스크린 일체형 유기 발광 표시 장치 제조 방법 |
KR102360783B1 (ko) * | 2014-09-16 | 2022-02-10 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102328917B1 (ko) * | 2014-09-22 | 2021-11-19 | 엘지디스플레이 주식회사 | 유기전계발광 표시장치 |
KR102284756B1 (ko) | 2014-09-23 | 2021-08-03 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
WO2016059497A1 (en) * | 2014-10-17 | 2016-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and method for manufacturing light-emitting device |
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JP6402599B2 (ja) * | 2014-11-13 | 2018-10-10 | 富士通株式会社 | 情報処理装置、設計支援方法、及び設計支援プログラム |
KR102357269B1 (ko) * | 2014-12-12 | 2022-02-03 | 삼성디스플레이 주식회사 | 유기발광 표시장치 및 그 제조방법 |
KR102420461B1 (ko) * | 2015-02-06 | 2022-07-14 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 이의 제조 방법 |
CN104779268B (zh) * | 2015-04-13 | 2016-07-06 | 深圳市华星光电技术有限公司 | Oled显示器件 |
KR102343411B1 (ko) | 2015-05-15 | 2021-12-24 | 삼성디스플레이 주식회사 | 표시 장치 |
US10516118B2 (en) | 2015-09-30 | 2019-12-24 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, display device, method for manufacturing the same, and system including a plurality of display devices |
CN105428389B (zh) * | 2015-11-30 | 2018-12-18 | 上海天马有机发光显示技术有限公司 | 一种有机发光显示装置及制造方法 |
KR102594346B1 (ko) * | 2016-08-31 | 2023-10-25 | 엘지디스플레이 주식회사 | 유기발광표시장치와 그의 제조방법 |
KR20180045964A (ko) | 2016-10-26 | 2018-05-08 | 삼성디스플레이 주식회사 | 표시 장치 및 그의 제조 방법 |
CN106384744B (zh) * | 2016-11-16 | 2020-04-03 | 信利(惠州)智能显示有限公司 | 有机发光显示器件的制造方法 |
CN108630829B (zh) * | 2017-03-17 | 2019-11-08 | 京东方科技集团股份有限公司 | 显示面板的制作方法、显示面板及显示装置 |
US10836200B2 (en) * | 2017-11-13 | 2020-11-17 | X Display Company Technology Limited | Rigid micro-modules with ILED and light conductor |
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US11699778B2 (en) | 2018-03-16 | 2023-07-11 | Sharp Kabushiki Kaisha | Display device with a controlled thickness |
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JPWO2019220283A1 (ja) | 2018-05-18 | 2021-07-01 | 株式会社半導体エネルギー研究所 | 発光素子、発光装置、電子機器および照明装置 |
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CN112753057B (zh) * | 2018-09-25 | 2023-06-16 | 日本精机株式会社 | 显示装置 |
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KR20200046196A (ko) * | 2018-10-23 | 2020-05-07 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
JP7236844B2 (ja) * | 2018-11-12 | 2023-03-10 | 株式会社ジャパンディスプレイ | 表示装置、及びその製造方法 |
TWI684812B (zh) * | 2018-11-26 | 2020-02-11 | 友達光電股份有限公司 | 顯示面板 |
US20220140057A1 (en) * | 2019-03-06 | 2022-05-05 | Sharp Kabushiki Kaisha | Display device and method for manufacturing display device |
WO2020202525A1 (ja) * | 2019-04-04 | 2020-10-08 | シャープ株式会社 | 表示装置 |
CN110299471B (zh) * | 2019-06-28 | 2021-09-07 | 昆山工研院新型平板显示技术中心有限公司 | 显示面板、显示设备及显示面板的制备方法 |
CN110610972B (zh) * | 2019-09-19 | 2022-06-03 | 京东方科技集团股份有限公司 | 一种显示基板及其制备方法、显示装置 |
CN110993661A (zh) * | 2019-12-02 | 2020-04-10 | 京东方科技集团股份有限公司 | 显示面板及其制作方法、显示装置 |
CN111916578B (zh) * | 2020-07-15 | 2023-12-19 | 京东方科技集团股份有限公司 | 一种阵列基板、其制备方法及显示装置 |
CN112080721A (zh) * | 2020-09-16 | 2020-12-15 | 云谷(固安)科技有限公司 | 掩膜板及其制备方法、显示基板及显示装置 |
CN114530474A (zh) * | 2020-10-30 | 2022-05-24 | 京东方科技集团股份有限公司 | 显示面板、显示装置及显示面板的制造方法 |
TWI749889B (zh) * | 2020-11-20 | 2021-12-11 | 友達光電股份有限公司 | 畫素陣列基板 |
WO2022224398A1 (ja) * | 2021-04-22 | 2022-10-27 | シャープディスプレイテクノロジー株式会社 | 表示装置及び表示装置の製造方法 |
CN113345942A (zh) * | 2021-05-26 | 2021-09-03 | 武汉华星光电半导体显示技术有限公司 | 一种显示面板及其制备方法 |
CN115881788A (zh) * | 2021-09-26 | 2023-03-31 | 群创光电股份有限公司 | 电子装置及其制造方法 |
CN116564902A (zh) * | 2023-04-27 | 2023-08-08 | 惠科股份有限公司 | 显示面板、显示面板的制备方法和显示装置 |
Family Cites Families (130)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6045219A (ja) | 1983-08-23 | 1985-03-11 | Toshiba Corp | アクテイブマトリクス型表示装置 |
US4678282A (en) | 1985-02-19 | 1987-07-07 | Ovonic Imaging Systems, Inc. | Active display matrix addressable without crossed lines on any one substrate and method of using the same |
US4653864A (en) | 1986-02-26 | 1987-03-31 | Ovonic Imaging Systems, Inc. | Liquid crystal matrix display having improved spacers and method of making same |
JPS6472557A (en) | 1987-09-11 | 1989-03-17 | Seiko Instr & Electronics | Image sensor |
US6037712A (en) | 1996-06-10 | 2000-03-14 | Tdk Corporation | Organic electroluminescence display device and producing method thereof |
JPH10134959A (ja) | 1996-10-29 | 1998-05-22 | Sharp Corp | 薄膜elパネル |
JP3361029B2 (ja) | 1997-03-19 | 2003-01-07 | 株式会社東芝 | 表示装置 |
US6465268B2 (en) | 1997-05-22 | 2002-10-15 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing an electro-optical device |
US6175345B1 (en) | 1997-06-02 | 2001-01-16 | Canon Kabushiki Kaisha | Electroluminescence device, electroluminescence apparatus, and production methods thereof |
JP3520396B2 (ja) | 1997-07-02 | 2004-04-19 | セイコーエプソン株式会社 | アクティブマトリクス基板と表示装置 |
JP3580092B2 (ja) | 1997-08-21 | 2004-10-20 | セイコーエプソン株式会社 | アクティブマトリクス型表示装置 |
US6592933B2 (en) | 1997-10-15 | 2003-07-15 | Toray Industries, Inc. | Process for manufacturing organic electroluminescent device |
CN1293784C (zh) | 1998-03-17 | 2007-01-03 | 精工爱普生株式会社 | 薄膜构图衬底、薄膜形成方法和薄膜元件 |
JPH11339958A (ja) | 1998-05-22 | 1999-12-10 | Casio Comput Co Ltd | 電界発光素子の製造方法 |
KR100697413B1 (ko) | 1998-07-30 | 2007-03-19 | 마츠시타 덴끼 산교 가부시키가이샤 | 액정 표시 장치, 영상 디스플레이 장치, 정보 처리 장치, 및 그 제조 방법 |
JP2000196101A (ja) * | 1998-10-13 | 2000-07-14 | Semiconductor Energy Lab Co Ltd | 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法 |
JP4364957B2 (ja) | 1998-10-22 | 2009-11-18 | 北陸電気工業株式会社 | 蒸着マスク |
JP4186289B2 (ja) | 1998-12-24 | 2008-11-26 | 凸版印刷株式会社 | 有機エレクトロルミネッセンス表示素子用基板の製造方法および有機エレクトロルミネッセンス表示素子の製造方法 |
US6680487B1 (en) | 1999-05-14 | 2004-01-20 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor comprising a TFT provided on a substrate having an insulating surface and method of fabricating the same |
JP2001052864A (ja) * | 1999-06-04 | 2001-02-23 | Semiconductor Energy Lab Co Ltd | 電気光学装置の作製方法 |
US7288420B1 (en) | 1999-06-04 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing an electro-optical device |
US6469439B2 (en) * | 1999-06-15 | 2002-10-22 | Toray Industries, Inc. | Process for producing an organic electroluminescent device |
TW459275B (en) | 1999-07-06 | 2001-10-11 | Semiconductor Energy Lab | Semiconductor device and method of fabricating the same |
US6952020B1 (en) | 1999-07-06 | 2005-10-04 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
US6833668B1 (en) * | 1999-09-29 | 2004-12-21 | Sanyo Electric Co., Ltd. | Electroluminescence display device having a desiccant |
EP1096568A3 (en) | 1999-10-28 | 2007-10-24 | Sony Corporation | Display apparatus and method for fabricating the same |
JP3809758B2 (ja) | 1999-10-28 | 2006-08-16 | ソニー株式会社 | 表示装置及び表示装置の製造方法 |
JP4776769B2 (ja) | 1999-11-09 | 2011-09-21 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP2001148291A (ja) * | 1999-11-19 | 2001-05-29 | Sony Corp | 表示装置及びその製造方法 |
JP4076720B2 (ja) | 1999-12-28 | 2008-04-16 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
TW473800B (en) | 1999-12-28 | 2002-01-21 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
JP4132528B2 (ja) * | 2000-01-14 | 2008-08-13 | シャープ株式会社 | 液晶表示装置の製造方法 |
US6559594B2 (en) | 2000-02-03 | 2003-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
JP4062844B2 (ja) | 2000-02-03 | 2008-03-19 | 株式会社豊田自動織機 | 燃料噴射装置 |
US6882102B2 (en) | 2000-02-29 | 2005-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
TW484238B (en) | 2000-03-27 | 2002-04-21 | Semiconductor Energy Lab | Light emitting device and a method of manufacturing the same |
US20010030511A1 (en) | 2000-04-18 | 2001-10-18 | Shunpei Yamazaki | Display device |
TW502236B (en) | 2000-06-06 | 2002-09-11 | Semiconductor Energy Lab | Display device |
JP2002062845A (ja) * | 2000-06-06 | 2002-02-28 | Semiconductor Energy Lab Co Ltd | 表示装置 |
TW522454B (en) * | 2000-06-22 | 2003-03-01 | Semiconductor Energy Lab | Display device |
JP2002164181A (ja) | 2000-09-18 | 2002-06-07 | Semiconductor Energy Lab Co Ltd | 表示装置及びその作製方法 |
US6739931B2 (en) | 2000-09-18 | 2004-05-25 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method of fabricating the display device |
JP2002101252A (ja) | 2000-09-21 | 2002-04-05 | Canon Inc | 画像出力装置及び画像出力装置の制御方法 |
US6924594B2 (en) | 2000-10-03 | 2005-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP2002184569A (ja) * | 2000-10-03 | 2002-06-28 | Semiconductor Energy Lab Co Ltd | 発光装置 |
TW522752B (en) | 2000-10-20 | 2003-03-01 | Toshiba Corp | Self-luminous display panel and method of manufacturing the same |
JP3695308B2 (ja) | 2000-10-27 | 2005-09-14 | 日本電気株式会社 | アクティブマトリクス有機el表示装置及びその製造方法 |
JP2002141512A (ja) | 2000-11-06 | 2002-05-17 | Advanced Display Inc | 薄膜のパターニング方法およびそれを用いたtftアレイ基板およびその製造方法 |
JP2002151252A (ja) | 2000-11-16 | 2002-05-24 | Stanley Electric Co Ltd | 有機el表示装置 |
US6965124B2 (en) | 2000-12-12 | 2005-11-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and method of fabricating the same |
SG111923A1 (en) | 2000-12-21 | 2005-06-29 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
JP4067819B2 (ja) * | 2000-12-21 | 2008-03-26 | 株式会社半導体エネルギー研究所 | 発光装置 |
US6465266B1 (en) | 2001-01-05 | 2002-10-15 | Advanced Micro Devices, Inc. | Semiconductor device short analysis |
JP2002208484A (ja) * | 2001-01-12 | 2002-07-26 | Tohoku Pioneer Corp | 有機elディスプレイ及びその製造方法 |
JP3440419B2 (ja) | 2001-02-02 | 2003-08-25 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
US6720198B2 (en) | 2001-02-19 | 2004-04-13 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and manufacturing method thereof |
US6992439B2 (en) | 2001-02-22 | 2006-01-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device with sealing structure for protecting organic light emitting element |
JP4101529B2 (ja) | 2001-02-22 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 表示装置及びその作製方法 |
JP2002289347A (ja) | 2001-03-27 | 2002-10-04 | Sanyo Electric Co Ltd | エレクトロルミネッセンス表示装置、その製造方法、被着マスク及びその製造方法 |
JP4801278B2 (ja) | 2001-04-23 | 2011-10-26 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
JP2002372928A (ja) * | 2001-06-13 | 2002-12-26 | Sony Corp | タイリング型表示装置及びその製造方法 |
TW548860B (en) | 2001-06-20 | 2003-08-21 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
US7211828B2 (en) | 2001-06-20 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic apparatus |
JP2003086356A (ja) * | 2001-09-06 | 2003-03-20 | Semiconductor Energy Lab Co Ltd | 発光装置及び電子機器 |
JP4665352B2 (ja) * | 2001-07-10 | 2011-04-06 | 日本電気株式会社 | 顧客認証システム、顧客認証方法、及び該方法を実施するための制御プログラム |
JP2003059671A (ja) | 2001-08-20 | 2003-02-28 | Sony Corp | 表示素子及びその製造方法 |
JP2003063560A (ja) | 2001-08-21 | 2003-03-05 | Yokoyama:Kk | アンカープラグ類のブリスターパック |
JP4166455B2 (ja) * | 2001-10-01 | 2008-10-15 | 株式会社半導体エネルギー研究所 | 偏光フィルム及び発光装置 |
JP2003123969A (ja) | 2001-10-17 | 2003-04-25 | Matsushita Electric Ind Co Ltd | 蒸着用マスクおよび有機エレクトロルミネッセンスディスプレイの製造方法 |
US6852997B2 (en) | 2001-10-30 | 2005-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
JP4493905B2 (ja) * | 2001-11-09 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
US7042024B2 (en) | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
JP4451054B2 (ja) | 2001-11-09 | 2010-04-14 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
CN100380673C (zh) | 2001-11-09 | 2008-04-09 | 株式会社半导体能源研究所 | 发光设备及其制造方法 |
JP4515022B2 (ja) * | 2001-11-16 | 2010-07-28 | 株式会社半導体エネルギー研究所 | 発光装置 |
US7483001B2 (en) | 2001-11-21 | 2009-01-27 | Seiko Epson Corporation | Active matrix substrate, electro-optical device, and electronic device |
JP3983037B2 (ja) | 2001-11-22 | 2007-09-26 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法 |
JP3705264B2 (ja) | 2001-12-18 | 2005-10-12 | セイコーエプソン株式会社 | 表示装置及び電子機器 |
JP4101511B2 (ja) | 2001-12-27 | 2008-06-18 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
US6815723B2 (en) | 2001-12-28 | 2004-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor |
KR100781594B1 (ko) * | 2001-12-28 | 2007-12-03 | 엘지.필립스 엘시디 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
KR100834344B1 (ko) * | 2001-12-29 | 2008-06-02 | 엘지디스플레이 주식회사 | 능동행렬 유기전기발광소자 및 그의 제조 방법 |
KR100488953B1 (ko) | 2001-12-31 | 2005-05-11 | 비오이 하이디스 테크놀로지 주식회사 | 액정표시장치의 지주 스페이서 형성방법 |
JP4627966B2 (ja) * | 2002-01-24 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法 |
SG143063A1 (en) | 2002-01-24 | 2008-06-27 | Semiconductor Energy Lab | Light emitting device and method of manufacturing the same |
TWI258317B (en) | 2002-01-25 | 2006-07-11 | Semiconductor Energy Lab | A display device and method for manufacturing thereof |
JP2004145244A (ja) * | 2002-01-25 | 2004-05-20 | Semiconductor Energy Lab Co Ltd | 表示装置 |
JP4094863B2 (ja) | 2002-02-12 | 2008-06-04 | 三星エスディアイ株式会社 | 有機el表示装置 |
JP2003243171A (ja) * | 2002-02-18 | 2003-08-29 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネッセンスディスプレイパネルおよびその製造方法 |
JP3481232B2 (ja) | 2002-03-05 | 2003-12-22 | 三洋電機株式会社 | 有機エレクトロルミネッセンスパネルの製造方法 |
JP4651916B2 (ja) | 2002-03-07 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
EP1343206B1 (en) | 2002-03-07 | 2016-10-26 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus, electronic apparatus, illuminating device and method of fabricating the light emitting apparatus |
JP4545385B2 (ja) * | 2002-03-26 | 2010-09-15 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP3989761B2 (ja) | 2002-04-09 | 2007-10-10 | 株式会社半導体エネルギー研究所 | 半導体表示装置 |
US7309269B2 (en) | 2002-04-15 | 2007-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
JP4156431B2 (ja) * | 2002-04-23 | 2008-09-24 | 株式会社半導体エネルギー研究所 | 発光装置およびその作製方法 |
US7579771B2 (en) | 2002-04-23 | 2009-08-25 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and method of manufacturing the same |
JP2003317971A (ja) | 2002-04-26 | 2003-11-07 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
TWI272556B (en) | 2002-05-13 | 2007-02-01 | Semiconductor Energy Lab | Display device |
JP4954434B2 (ja) * | 2002-05-17 | 2012-06-13 | 株式会社半導体エネルギー研究所 | 製造装置 |
US20040035360A1 (en) | 2002-05-17 | 2004-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
JP4120279B2 (ja) | 2002-06-07 | 2008-07-16 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置、有機エレクトロルミネッセンス装置の製造方法及び電子機器 |
US7230271B2 (en) | 2002-06-11 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof |
JP2004083650A (ja) | 2002-08-23 | 2004-03-18 | Konica Minolta Holdings Inc | 有機半導体材料及びそれを用いる薄膜トランジスタ素子 |
JP2004127933A (ja) | 2002-09-11 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | 発光装置およびその作製方法 |
US7291970B2 (en) | 2002-09-11 | 2007-11-06 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting apparatus with improved bank structure |
JP2004111166A (ja) * | 2002-09-18 | 2004-04-08 | Hitachi Ltd | 有機el素子用バンク付き基板 |
US7094684B2 (en) | 2002-09-20 | 2006-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device |
JP2004127606A (ja) * | 2002-09-30 | 2004-04-22 | Seiko Epson Corp | 電気光学装置及び電子機器 |
JP2004152958A (ja) | 2002-10-30 | 2004-05-27 | Pioneer Electronic Corp | 有機半導体装置 |
JP2004165067A (ja) * | 2002-11-14 | 2004-06-10 | Sanyo Electric Co Ltd | 有機電界発光パネル |
JP2004192813A (ja) | 2002-12-06 | 2004-07-08 | Toshiba Matsushita Display Technology Co Ltd | 有機el表示装置 |
JP4712298B2 (ja) * | 2002-12-13 | 2011-06-29 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
KR101032337B1 (ko) | 2002-12-13 | 2011-05-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 그의 제조방법 |
JP2004227792A (ja) * | 2003-01-20 | 2004-08-12 | Renesas Technology Corp | 有機エレクトロルミネッセンス表示装置 |
CN100440530C (zh) | 2003-04-15 | 2008-12-03 | 富士胶片株式会社 | 有机el显示装置 |
CN100583193C (zh) | 2003-11-28 | 2010-01-20 | 株式会社半导体能源研究所 | 制造显示设备的方法 |
KR100611159B1 (ko) | 2003-11-29 | 2006-08-09 | 삼성에스디아이 주식회사 | 유기전계 발광표시장치 |
US7792489B2 (en) | 2003-12-26 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device, electronic appliance, and method for manufacturing light emitting device |
JP3915810B2 (ja) * | 2004-02-26 | 2007-05-16 | セイコーエプソン株式会社 | 有機エレクトロルミネッセンス装置、その製造方法、及び電子機器 |
JP3994998B2 (ja) | 2004-03-03 | 2007-10-24 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法及び電子機器 |
US7619258B2 (en) | 2004-03-16 | 2009-11-17 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
JP2005322564A (ja) | 2004-05-11 | 2005-11-17 | Sony Corp | 表示装置の製造方法および表示装置 |
US7005871B1 (en) | 2004-06-29 | 2006-02-28 | Nvidia Corporation | Apparatus, system, and method for managing aging of an integrated circuit |
US8350466B2 (en) | 2004-09-17 | 2013-01-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
US8772783B2 (en) | 2004-10-14 | 2014-07-08 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
TWI460851B (zh) | 2005-10-17 | 2014-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
CN102007586B (zh) | 2008-04-18 | 2013-09-25 | 株式会社半导体能源研究所 | 薄膜晶体管及其制造方法 |
US8138032B2 (en) | 2008-04-18 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing thin film transistor having microcrystalline semiconductor film |
-
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- 2005-09-29 CN CN2005101380422A patent/CN1825616B/zh active Active
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US9929220B2 (en) | 2009-01-08 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
US10361258B2 (en) | 2009-01-08 | 2019-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic device |
US9337244B2 (en) | 2011-02-25 | 2016-05-10 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device and electronic device using light-emitting device |
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