JP4712298B2 - 発光装置の作製方法 - Google Patents
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Description
少なくとも一方が透光性である一対の基板間に、第1の電極と、該第1の電極上に接する有機化合物層と、該有機化合物層上に接する第2の電極とを有する発光素子を複数有する画素部を備えた発光装置の作製方法であって、
一方の基板上に画素部を形成する工程と、
もう一方の基板上に線形状の第1のシール材を描画する工程と、
前記第1のシール材よりも粘度の低い第2のシール材を第1のシール材で囲まれた領域内へ異なる滴下量で複数滴滴下する工程と、
前記第1のシール材が前記画素部を囲むように配置され、且つ、少なくとも一対の前記第1のシール材の間は、前記第2のシール材で充填されるように前記一対の基板を貼り合わせる工程とを有することを特徴とする発光装置の作製方法である。
少なくとも一方が透光性である一対の基板間に、第1の電極と、該第1の電極上に接する有機化合物層と、該有機化合物層上に接する第2の電極とを有する発光素子を複数有する画素部を備えた発光装置の作製方法であって、
一方の基板上に画素部を形成する工程と、
もう一方の基板上に線形状の第1のシール材を描画する工程と、
前記第1のシール材よりも粘度の低い第2のシール材を第1のシール材で囲まれた領域内へ異なる滴下量で複数滴滴下する工程と、
前記第1のシール材が前記画素部を囲むように一対の基板を貼り合わせる際、加圧により前記第2のシール材を広げて互いに対向する前記第1のシール材の間に充填させる工程と、
前記第1のシール材と前記第2のシール材を硬化させる工程と、を有することを特徴とする発光装置の作製方法である。
一対の基板を所定の間隔でシール材を間に挟んで貼り合わせる基板貼りあわせ装置を備えた製造装置であって、
対向して配置された2つの基板支持台と、
前記2つの支持台間を押圧してシール材を押しつぶす手段とを有し、
前記基板支持台は、フッ素系樹脂を含む膜で覆われていることを特徴とする製造装置である。
対向して配置された2つの基板支持台と、
前記2つの支持台間を押圧してシール材を押しつぶす手段とを有し、
両面テープで前記2つの基板支持台に前記基板がそれぞれ固定されていることを特徴とする製造装置である。
図1(A)には、貼りあわせる前の封止基板(第2の基板12)の上面図の一例を示している。図1(A)では一枚の基板から1つの画素部を有する発光装置を形成する例を示している。
実施の形態1では1枚の基板から1パネルを作製する例を示したが、ここでは、1枚の基板から複数パネルを作製する多面取りを行う例を図3に示す。
Claims (5)
- 第1の基板上に、発光素子を複数有する画素部を形成し、
第2の基板上に、第1のシール材を四隅および各辺に開口を有するライン状のパターンに描画し、第2のシール材を前記第1のシール材で囲まれた領域内へ異なる滴下量で複数滴滴下し、
前記第1のシール材が前記画素部を囲むように配置され、かつ、少なくとも一対の前記第1のシール材の間は、前記第2のシール材で充填されるように前記第1の基板と前記第2の基板を貼り合わせ、
前記第2のシール材は、少なくとも前記画素部の中央と、該中央と一定の間隔を有して取り囲む位置とに滴下されることを特徴とする発光装置の作製方法。 - 前記パターンを、それぞれ対称的に描画する、請求項1に記載の発光装置の作製方法。
- 前記第1の基板上の、前記画素部の1辺に端子部を設け、
前記第2の基板上の、前記1辺と貼り合わせる辺における、前記開口を挟む前記パターンの間隔を、他の辺より狭く描画する、請求項1に記載の発光装置の作製方法。 - 前記パターンを、前記第2の基板端面に対して斜めに描画する、請求項1から3いずれか記載の発光装置の作製方法。
- 前記第2のシール材は、前記第1のシール材よりも粘度が低い、請求項1から4いずれか記載の発光装置の作製方法。
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Publication number | Priority date | Publication date | Assignee | Title |
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US7753751B2 (en) | 2004-09-29 | 2010-07-13 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating the display device |
JP4651429B2 (ja) * | 2004-12-13 | 2011-03-16 | 三洋電機株式会社 | 有機エレクトロルミネッセンス素子の封止方法 |
US8471278B2 (en) * | 2004-12-27 | 2013-06-25 | Otb Group B.V. | Method for manufacturing an OLED or a blank for forming an OLED as well as such a blank or OLED |
JP4539368B2 (ja) * | 2005-02-24 | 2010-09-08 | ソニー株式会社 | 表示装置の製造方法 |
JP4592473B2 (ja) * | 2005-03-31 | 2010-12-01 | 三洋電機株式会社 | 発光パネルの製造方法、表示パネルの製造方法及び表示パネル |
JP5303315B2 (ja) * | 2009-03-03 | 2013-10-02 | ローム株式会社 | 有機発光素子の製造方法 |
KR101084264B1 (ko) | 2009-08-07 | 2011-11-16 | 삼성모바일디스플레이주식회사 | 봉지기판, 이를 포함하는 유기전계발광표시장치 및 이의 제조방법 |
CN104350119B (zh) * | 2012-05-31 | 2017-06-23 | Lg化学株式会社 | 制备有机电子装置的方法 |
US20140061610A1 (en) | 2012-08-31 | 2014-03-06 | Hyo-Young MUN | Organic light emitting device and manufacturing method thereof |
TWI777433B (zh) * | 2013-09-06 | 2022-09-11 | 日商半導體能源研究所股份有限公司 | 發光裝置以及發光裝置的製造方法 |
WO2015162893A1 (ja) * | 2014-04-22 | 2015-10-29 | 株式会社Joled | 有機elパネルの製造方法 |
WO2019021370A1 (ja) * | 2017-07-25 | 2019-01-31 | シャープ株式会社 | 塗布装置、elデバイス製造装置およびelデバイス |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000036384A (ja) * | 1998-07-17 | 2000-02-02 | Nec Corp | 有機薄膜elデバイスの製造方法 |
JP2000068050A (ja) * | 1998-08-24 | 2000-03-03 | Casio Comput Co Ltd | 電界発光素子及びその製造方法 |
JP2000133445A (ja) * | 1998-10-28 | 2000-05-12 | Shinetsu Engineering Kk | エレクトロルミネセンス素子封止方法及び装置 |
JP2000150145A (ja) * | 1998-11-02 | 2000-05-30 | Toyota Motor Corp | El素子の密封方法 |
JP2001126866A (ja) * | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | 有機el表示装置の製造方法および該方法により製造された有機el表示装置 |
JP2001297878A (ja) * | 2000-04-13 | 2001-10-26 | Nippon Seiki Co Ltd | 有機elパネルの製造方法 |
JP2002317263A (ja) * | 2001-04-18 | 2002-10-31 | Tokki Corp | 真空蒸着装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6454420A (en) * | 1987-08-25 | 1989-03-01 | Matsushita Electric Ind Co Ltd | Liquid crystal display element |
JPH055890A (ja) * | 1991-06-27 | 1993-01-14 | Sanyo Electric Co Ltd | 液晶表示パネルおよびその製造方法 |
JP3162313B2 (ja) * | 1997-01-20 | 2001-04-25 | 工業技術院長 | 薄膜製造方法および薄膜製造装置 |
-
2003
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000036384A (ja) * | 1998-07-17 | 2000-02-02 | Nec Corp | 有機薄膜elデバイスの製造方法 |
JP2000068050A (ja) * | 1998-08-24 | 2000-03-03 | Casio Comput Co Ltd | 電界発光素子及びその製造方法 |
JP2000133445A (ja) * | 1998-10-28 | 2000-05-12 | Shinetsu Engineering Kk | エレクトロルミネセンス素子封止方法及び装置 |
JP2000150145A (ja) * | 1998-11-02 | 2000-05-30 | Toyota Motor Corp | El素子の密封方法 |
JP2001126866A (ja) * | 1999-10-22 | 2001-05-11 | Stanley Electric Co Ltd | 有機el表示装置の製造方法および該方法により製造された有機el表示装置 |
JP2001297878A (ja) * | 2000-04-13 | 2001-10-26 | Nippon Seiki Co Ltd | 有機elパネルの製造方法 |
JP2002317263A (ja) * | 2001-04-18 | 2002-10-31 | Tokki Corp | 真空蒸着装置 |
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