JP2013030467A - 発光装置および発光装置の作製方法 - Google Patents
発光装置および発光装置の作製方法 Download PDFInfo
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- JP2013030467A JP2013030467A JP2012134161A JP2012134161A JP2013030467A JP 2013030467 A JP2013030467 A JP 2013030467A JP 2012134161 A JP2012134161 A JP 2012134161A JP 2012134161 A JP2012134161 A JP 2012134161A JP 2013030467 A JP2013030467 A JP 2013030467A
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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Abstract
【解決手段】各々の発光素子の周囲を多孔質構造の隔壁で囲む構造とした。多孔質構造の隔壁は水分を物理吸着するため、発光装置は、発光素子に極めて近い箇所に吸湿膜として機能する隔壁が存在し、当該吸湿膜により発光装置内部に残留した水分や水蒸気、また、発光装置外部から侵入する水分や水蒸気を効率良く吸着することができるため、水分や水蒸気に起因した発光装置の性能低下を効果的に抑制することができる。
【選択図】図1
Description
本実施の形態では、本発明の一態様である発光装置の構造および作製方法の一例について、図1から図4を用いて説明する。
図1は、本発明の一態様である発光装置400の、発光部分およびその周辺部分についての構造を示す図であり、図1(A1)は発光装置の上面図であり、図1(B)は図1(A1)のA1−A2部分およびB1−B2部分における断面図である。なお、構造を分かり易くするため、図1(A1)では全体に形成されている膜(または層)については記載していない。また、図1(A2)は図1(A1)の配線構造を分かり易くするために、図1(A1)の第3の電極216および第2の隔壁220を記載していない上面図である。
以下に、発光装置全体についての構造および作製方法ついての説明を記載する。
本実施の形態では、発光素子の構成の一例について、図8および図9を用いて説明する。本実施の形態で例示する発光素子は、第3の電極216、第4の電極502及びEL層500を備える。第3の電極216または第4の電極502のいずれか一方が陽極、他方が陰極として機能する。EL層500は第3の電極216と第4の電極502の間に設けられる。なお、当該EL層500の構成は第3の電極216と第4の電極502の材質に合わせて適宜選択すればよい。以下に発光素子の構成の一例を例示するが、勿論、発光素子の構成がこれに限定されることはない。
発光素子の構成の一例を図8(A)に示す。図8(A)に示す発光素子は、第3の電極216と第4の電極502の間にEL層500が挟まれている。
発光素子の構成の他の一例を図8(C)に示す。図8(C)に例示する発光素子は、第3の電極216と第4の電極502の間にEL層500が挟まれている。さらに、第4の電極502とEL層500との間には中間層806が設けられている。なお、図8(C)のEL層500には、図8(B)のEL層500と同様の構成を適用することができる。
発光素子の構成の他の一例を図9(A)に示す。図9(A)に例示する発光素子は、第3の電極216と第4の電極502の間に2つのEL層500aおよびEL層500bが設けられている。さらに、第1のEL層500aと、第2のEL層500bとの間には中間層806が設けられている。
次に、上述した構成を備える発光素子に用いることができる具体的な材料について、第3の電極、第4の電極、並びにEL層の順に説明する。
第3の電極216は、仕事関数の大きい(具体的には4.0eV以上が好ましい)金属、合金、電気伝導性化合物、およびこれらの混合物などを用いることが好ましい。具体的には、例えば、インジウム錫酸化物(ITO:Indium Tin Oxide)、珪素若しくは酸化珪素を含有したインジウム錫酸化物、インジウム亜鉛酸化物、酸化タングステン及び酸化亜鉛を含有した酸化インジウム等が挙げられる。
第4の電極502に接して第1の電荷発生領域806cを、EL層500との間に設ける場合、第4の電極502は仕事関数の大小に関わらず様々な導電性材料を用いることができる。
上述したEL層を構成する各層に用いることができる材料について、以下に具体例を示す。
正孔輸送層は、正孔輸送性の高い物質を含む層である。正孔輸送層は、単層に限られず正孔輸送性の高い物質を含む層を二層以上積層したものでもよい。電子よりも正孔の輸送性の高い物質であればよく、特に10−6cm2/Vs以上の正孔移動度を有する物質が、発光素子の駆動電圧を低減できるため好ましい。
発光層は、発光物質を含む層である。発光層は、単層に限られず発光物質を含む層を二層以上積層したものでもよい。発光物質は蛍光性化合物や、燐光性化合物を用いることができる。発光物質に燐光性化合物を用いると、発光素子の発光効率を高められるため好ましい。
電子輸送層は、電子輸送性の高い物質を含む層である。電子輸送層は、単層に限られず電子輸送性の高い物質を含む層を二層以上積層したものでもよい。正孔よりも電子の輸送性の高い物質であればよく、特に10−6cm2/Vs以上の電子移動度を有する物質が、発光素子の駆動電圧を低減できるため好ましい。
電子注入層は、電子注入性の高い物質を含む層である。電子注入層は、単層に限られず電子注入性の高い物質を含む層を二層以上積層したものでもよい。電子注入層を設ける構成とすることで第4の電極502からの電子の注入効率が高まり、発光素子の駆動電圧を低減できるため好ましい。
第1の電荷発生領域806c、及び第2の電荷発生領域は、正孔輸送性の高い物質とアクセプター性物質を含む領域である。なお、電荷発生領域は、同一膜中に正孔輸送性の高い物質とアクセプター性物質を含有する場合だけでなく、正孔輸送性の高い物質を含む層とアクセプター性物質を含む層とが積層されていても良い。但し、第1の電荷発生領域を第4の電極側に設ける積層構造の場合には、正孔輸送性の高い物質を含む層が第4の電極502と接する構造となり、第2の電荷発生領域を第3の電極側に設ける積層構造の場合には、アクセプター性物質を含む層が第3の電極216と接する構造となる。
電子リレー層806bは、第1の電荷発生領域806cにおいてアクセプター性物質がひき抜いた電子を速やかに受け取ることができる層である。従って、電子リレー層806bは、電子輸送性の高い物質を含む層であり、またそのLUMO準位は、第1の電荷発生領域806cにおけるアクセプター性物質のアクセプター準位と、当該電子リレー層が接するEL層500のLUMO準位との間に位置する。具体的には、およそ−5.0eV以上−3.0eV以下とするのが好ましい。
電子注入バッファー層806aは、第1の電荷発生領域806cからEL層500への電子の注入を容易にする層である。電子注入バッファー層806aを第1の電荷発生領域806cとEL層500の間に設けることにより、両者の注入障壁を緩和することができる。
これらの層を適宜組み合わせてEL層を形成する。EL層は、用いる材料に応じて種々の方法(例えば、乾式法や湿式法等)を用いることができる。例えば、真空蒸着法、インクジェット法またはスピンコート法などを選んで用いればよい。また、各層で異なる方法を用いて形成してもよい。
本実施の形態では、上述の実施の形態で説明した発光装置を電子機器に適用する場合の一例について、図10を用いて説明する。
202 下地層
204 第1の電極
206 第1の絶縁層
208 半導体層
210 第2の電極
212 第2の絶縁層
214 第3の絶縁層
216 第3の電極
218 第1の隔壁
220 第2の隔壁
230 トランジスタ
240 容量素子
400 発光装置
401 基板
402 発光領域
403 端子部
404 端子部
405 端子
406 端子
410 発光部分
420 トランジスタ
430 トランジスタ
440 容量素子
450 発光素子
500 EL層
500a EL層
500b EL層
502 第4の電極
504 シール材
506 対向基板
508 カラーフィルター
509 導電材料
510a 外部配線
510b 外部配線
801 正孔注入層
802 正孔輸送層
803 発光層
804 電子輸送層
805 電子注入層
806 中間層
806a 電子注入バッファー層
806b 電子リレー層
806c 電荷発生領域
1001 筐体
1002 筐体
1003a 第1の表示部
1003b 第2の表示部
1004 選択ボタン
1005 キーボード
1011 筐体
1012 表示部
1013 スタンド
1014 リモコン操作機
1021 本体
1022 座席
1023 ヒンジ
1024 表示部
1100 照明機器
1102 照明機器
1104 卓上型照明機器
Claims (8)
- ソース電極、ドレイン電極、ゲート電極、ゲート絶縁層および半導体層を備えるトランジスタと、
前記ドレイン電極と電気的に接続された第1の電極と、
前記第1の電極上に開口部を有し、且つ前記第1の電極の端部を覆う第1の隔壁と、
前記第1の隔壁上の第2の隔壁と、
前記第1の電極、前記第1の隔壁および前記第2の隔壁上のEL層と、
前記EL層上の第2の電極を有する構造であり、
前記第1の電極、前記EL層および前記第2の電極の重なる部分が発光素子として機能し、
前記第2の隔壁が、複数の空孔を有する多孔質構造の金属酸化物であることを特徴とする発光装置。 - 請求項1において
前記第2の隔壁は、前記空孔を含む前記第2の隔壁全体の体積を100%とした場合において、前記第2の隔壁の表面から内部方向に10%の範囲における気孔率が50%以上であることを特徴とする発光装置。 - 請求項1または請求項2において、
前記第2の隔壁の任意の一部を切断した際に、切断面に形成される孔断面の50%以上が1nm2以上100002nm以下の面積であることを特徴とする発光装置。 - 請求項1乃至請求項3のいずれか一項において、
前記第2の隔壁が、前記発光素子を隙間無く囲むことを特徴とする発光装置。 - 請求項1乃至請求項4のいずれか一項において、
前記第1の隔壁表面と前記第2の隔壁側面の成す角度が90度未満であることを特徴とする発光装置。 - 請求項1乃至請求項5のいずれか一項において、
前記第2の隔壁が、酸化珪素、酸化アルミニウム、酸化ガリウム、酸化錫、酸化チタン、酸化バナジウム、酸化ジルコニウムまたは酸化ニオブのうち少なくとも1種類以上の材料を含むことを特徴とする発光装置。 - ソース電極、ドレイン電極、ゲート電極、ゲート絶縁層および半導体層を備えるトランジスタを形成する工程と、
前記ドレイン電極と電気的に接続された第1の電極を形成する工程と、
前記第1の電極上に開口部を有し、且つ前記第1の電極の端部を覆う第1の隔壁を形成する工程と、
前記第1の電極を囲む、前記第1の隔壁上の第2の隔壁を形成する工程と、
前記第1の電極、前記第1の隔壁および前記第2の隔壁上のEL層を形成する工程と、
前記EL層上の第2の電極を形成する工程を有し、
前記第2の隔壁は、
金属酸化物の微粒子および分散剤が少なくとも混合された溶液を前記第1の隔壁上に塗布し、前記溶液に対して加熱処理を行い隔壁となる層を形成し、前記層上にレジストパターンを設けて前記レジストパターンをマスクとして前記層を選択的に除去することにより形成することを特徴とする発光装置の作製方法。 - 請求項7において、前記加熱処理を150℃以上400℃以下の温度で行うことを特徴とする発光装置の作製方法。
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