JP4607594B2 - 構造化シリコンアノード - Google Patents
構造化シリコンアノード Download PDFInfo
- Publication number
- JP4607594B2 JP4607594B2 JP2004549349A JP2004549349A JP4607594B2 JP 4607594 B2 JP4607594 B2 JP 4607594B2 JP 2004549349 A JP2004549349 A JP 2004549349A JP 2004549349 A JP2004549349 A JP 2004549349A JP 4607594 B2 JP4607594 B2 JP 4607594B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- electrode
- lithium
- substrate
- pillar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M10/00—Secondary cells; Manufacture thereof
- H01M10/05—Accumulators with non-aqueous electrolyte
- H01M10/052—Li-accumulators
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/134—Electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
- H01M4/139—Processes of manufacture
- H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/36—Selection of substances as active materials, active masses, active liquids
- H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
- H01M4/386—Silicon or alloys based on silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/64—Carriers or collectors
- H01M4/66—Selection of materials
- H01M4/661—Metal or alloys, e.g. alloy coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
- H01M2004/027—Negative electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
- H01M4/00—Electrodes
- H01M4/02—Electrodes composed of, or comprising, active material
- H01M4/04—Processes of manufacture in general
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/10—Energy storage using batteries
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/90—Bulk effect device making
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/701—Integrated with dissimilar structures on a common substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/81—Of specified metal or metal alloy composition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49108—Electric battery cell making
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Battery Electrode And Active Subsutance (AREA)
- Secondary Cells (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0225779A GB2395059B (en) | 2002-11-05 | 2002-11-05 | Structured silicon anode |
| PCT/GB2003/004783 WO2004042851A2 (en) | 2002-11-05 | 2003-11-05 | Structured silicon anode |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009200060A Division JP4723665B2 (ja) | 2002-11-05 | 2009-08-31 | 構造化シリコンアノード |
| JP2010000264A Division JP5603084B2 (ja) | 2002-11-05 | 2010-01-04 | 構造化シリコンアノード |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006505901A JP2006505901A (ja) | 2006-02-16 |
| JP2006505901A5 JP2006505901A5 (https=) | 2009-10-15 |
| JP4607594B2 true JP4607594B2 (ja) | 2011-01-05 |
Family
ID=9947238
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004549349A Expired - Fee Related JP4607594B2 (ja) | 2002-11-05 | 2003-11-05 | 構造化シリコンアノード |
| JP2009200060A Expired - Lifetime JP4723665B2 (ja) | 2002-11-05 | 2009-08-31 | 構造化シリコンアノード |
| JP2010000264A Expired - Fee Related JP5603084B2 (ja) | 2002-11-05 | 2010-01-04 | 構造化シリコンアノード |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009200060A Expired - Lifetime JP4723665B2 (ja) | 2002-11-05 | 2009-08-31 | 構造化シリコンアノード |
| JP2010000264A Expired - Fee Related JP5603084B2 (ja) | 2002-11-05 | 2010-01-04 | 構造化シリコンアノード |
Country Status (11)
| Country | Link |
|---|---|
| US (5) | US7402829B2 (https=) |
| EP (2) | EP1576680B1 (https=) |
| JP (3) | JP4607594B2 (https=) |
| KR (1) | KR100785695B1 (https=) |
| CN (1) | CN100399606C (https=) |
| AU (1) | AU2003276468A1 (https=) |
| CA (1) | CA2504634C (https=) |
| GB (1) | GB2395059B (https=) |
| IL (1) | IL168377A (https=) |
| RU (1) | RU2325008C2 (https=) |
| WO (1) | WO2004042851A2 (https=) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010135332A (ja) * | 2002-11-05 | 2010-06-17 | Nexeon Ltd | 構造化シリコンアノード |
Families Citing this family (142)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ZA200506095B (en) * | 2003-01-30 | 2006-10-25 | Univ Cape Town | A thin film semiconductor device and method of manufacturing a thin film semiconductor device |
| US7968273B2 (en) * | 2004-06-08 | 2011-06-28 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| CN102064102B (zh) * | 2004-06-08 | 2013-10-30 | 桑迪士克公司 | 形成单层纳米结构的方法和器件以及包含这种单层的器件 |
| US7776758B2 (en) | 2004-06-08 | 2010-08-17 | Nanosys, Inc. | Methods and devices for forming nanostructure monolayers and devices including such monolayers |
| US8563133B2 (en) | 2004-06-08 | 2013-10-22 | Sandisk Corporation | Compositions and methods for modulation of nanostructure energy levels |
| GB0601319D0 (en) | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | A method of fabricating pillars composed of silicon-based material |
| GB0601318D0 (en) * | 2006-01-23 | 2006-03-01 | Imp Innovations Ltd | Method of etching a silicon-based material |
| US9166230B1 (en) | 2007-01-12 | 2015-10-20 | Enovix Corporation | Three-dimensional battery having current-reducing devices corresponding to electrodes |
| CN101584065B (zh) | 2007-01-12 | 2013-07-10 | 易诺维公司 | 三维电池及其制造方法 |
| US8691450B1 (en) * | 2007-01-12 | 2014-04-08 | Enovix Corporation | Three-dimensional batteries and methods of manufacturing the same |
| FR2913011B1 (fr) * | 2007-02-22 | 2010-03-12 | Centre Nat Rech Scient | Nouveaux materiaux comprenant des elements du groupe 14 |
| GB0709165D0 (en) | 2007-05-11 | 2007-06-20 | Nexeon Ltd | A silicon anode for a rechargeable battery |
| AU2008301988B2 (en) * | 2007-07-12 | 2011-04-07 | Deese, Edward | Solar photovoltaic structure comprising quantized interaction sensitive nanocells |
| GB0713895D0 (en) * | 2007-07-17 | 2007-08-29 | Nexeon Ltd | Production |
| GB0713898D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | A method of fabricating structured particles composed of silcon or a silicon-based material and their use in lithium rechargeable batteries |
| GB0713896D0 (en) | 2007-07-17 | 2007-08-29 | Nexeon Ltd | Method |
| US7816031B2 (en) * | 2007-08-10 | 2010-10-19 | The Board Of Trustees Of The Leland Stanford Junior University | Nanowire battery methods and arrangements |
| US9941709B2 (en) | 2009-02-25 | 2018-04-10 | Cf Traverse Llc | Hybrid energy storage device charging |
| US9705136B2 (en) | 2008-02-25 | 2017-07-11 | Traverse Technologies Corp. | High capacity energy storage |
| US9979017B2 (en) | 2009-02-25 | 2018-05-22 | Cf Traverse Llc | Energy storage devices |
| US10727481B2 (en) | 2009-02-25 | 2020-07-28 | Cf Traverse Llc | Energy storage devices |
| US10205166B2 (en) | 2008-02-25 | 2019-02-12 | Cf Traverse Llc | Energy storage devices including stabilized silicon |
| US9412998B2 (en) | 2009-02-25 | 2016-08-09 | Ronald A. Rojeski | Energy storage devices |
| US9966197B2 (en) | 2009-02-25 | 2018-05-08 | Cf Traverse Llc | Energy storage devices including support filaments |
| US8481214B2 (en) * | 2008-02-25 | 2013-07-09 | Catalyst Power Technologies | Electrodes including support filament with collar stop |
| CN101953014B (zh) | 2008-02-25 | 2014-11-05 | 罗纳德·安东尼·罗杰斯基 | 高容量电极 |
| US9349544B2 (en) | 2009-02-25 | 2016-05-24 | Ronald A Rojeski | Hybrid energy storage devices including support filaments |
| US9917300B2 (en) | 2009-02-25 | 2018-03-13 | Cf Traverse Llc | Hybrid energy storage devices including surface effect dominant sites |
| US10056602B2 (en) | 2009-02-25 | 2018-08-21 | Cf Traverse Llc | Hybrid energy storage device production |
| US10193142B2 (en) | 2008-02-25 | 2019-01-29 | Cf Traverse Llc | Lithium-ion battery anode including preloaded lithium |
| US9362549B2 (en) | 2011-12-21 | 2016-06-07 | Cpt Ip Holdings, Llc | Lithium-ion battery anode including core-shell heterostructure of silicon coated vertically aligned carbon nanofibers |
| US9431181B2 (en) | 2009-02-25 | 2016-08-30 | Catalyst Power Technologies | Energy storage devices including silicon and graphite |
| US11233234B2 (en) | 2008-02-25 | 2022-01-25 | Cf Traverse Llc | Energy storage devices |
| US20100062338A1 (en) * | 2008-09-11 | 2010-03-11 | Lockheed Martin Corporation | Nanostructured anode for high capacity rechargeable batteries |
| GB2464158B (en) | 2008-10-10 | 2011-04-20 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries |
| GB2464157B (en) | 2008-10-10 | 2010-09-01 | Nexeon Ltd | A method of fabricating structured particles composed of silicon or a silicon-based material |
| US8940438B2 (en) | 2009-02-16 | 2015-01-27 | Samsung Electronics Co., Ltd. | Negative electrode including group 14 metal/metalloid nanotubes, lithium battery including the negative electrode, and method of manufacturing the negative electrode |
| US20100285358A1 (en) | 2009-05-07 | 2010-11-11 | Amprius, Inc. | Electrode Including Nanostructures for Rechargeable Cells |
| US10096817B2 (en) | 2009-05-07 | 2018-10-09 | Amprius, Inc. | Template electrode structures with enhanced adhesion characteristics |
| US20140370380A9 (en) * | 2009-05-07 | 2014-12-18 | Yi Cui | Core-shell high capacity nanowires for battery electrodes |
| US11996550B2 (en) | 2009-05-07 | 2024-05-28 | Amprius Technologies, Inc. | Template electrode structures for depositing active materials |
| GB2470056B (en) * | 2009-05-07 | 2013-09-11 | Nexeon Ltd | A method of making silicon anode material for rechargeable cells |
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| US9853292B2 (en) | 2009-05-11 | 2017-12-26 | Nexeon Limited | Electrode composition for a secondary battery cell |
| ES2910086T3 (es) | 2009-05-19 | 2022-05-11 | Oned Mat Inc | Materiales nanoestructurados para aplicaciones de batería |
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| KR101328148B1 (ko) * | 2011-11-17 | 2013-11-13 | 재단법인대구경북과학기술원 | 다공성 실리콘 구조체 및 이를 포함한 이차전지 |
| GB201122315D0 (en) | 2011-12-23 | 2012-02-01 | Nexeon Ltd | Etched silicon structures, method of forming etched silicon structures and uses thereof |
| US8841030B2 (en) | 2012-01-24 | 2014-09-23 | Enovix Corporation | Microstructured electrode structures |
| EP2810322A1 (en) | 2012-01-30 | 2014-12-10 | Nexeon Limited | Composition of si/c electro active material |
| US8592250B2 (en) * | 2012-02-01 | 2013-11-26 | International Business Machines Corporation | Self-aligned process to fabricate a memory cell array with a surrounding-gate access transistor |
| GB2499984B (en) | 2012-02-28 | 2014-08-06 | Nexeon Ltd | Composite particles comprising a removable filler |
| GB2500611A (en) | 2012-03-26 | 2013-10-02 | Cambridge Entpr Ltd | Powder comprising carbon nanostructures and method of preparation |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010135332A (ja) * | 2002-11-05 | 2010-06-17 | Nexeon Ltd | 構造化シリコンアノード |
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