WO2004042851A2 - Structured silicon anode - Google Patents

Structured silicon anode Download PDF

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Publication number
WO2004042851A2
WO2004042851A2 PCT/GB2003/004783 GB0304783W WO2004042851A2 WO 2004042851 A2 WO2004042851 A2 WO 2004042851A2 GB 0304783 W GB0304783 W GB 0304783W WO 2004042851 A2 WO2004042851 A2 WO 2004042851A2
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WO
WIPO (PCT)
Prior art keywords
silicon
pillars
substrate
anode
micron
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Ceased
Application number
PCT/GB2003/004783
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English (en)
French (fr)
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WO2004042851A3 (en
Inventor
Mino Green
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ip2ipo Innovations Ltd
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Imperial College Innovations Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial College Innovations Ltd filed Critical Imperial College Innovations Ltd
Priority to EP03810528A priority Critical patent/EP1576680B1/en
Priority to AU2003276468A priority patent/AU2003276468A1/en
Priority to JP2004549349A priority patent/JP4607594B2/ja
Priority to HK06106561.0A priority patent/HK1086669B/xx
Priority to US10/533,822 priority patent/US7402829B2/en
Priority to CA2504634A priority patent/CA2504634C/en
Publication of WO2004042851A2 publication Critical patent/WO2004042851A2/en
Priority to IL168377A priority patent/IL168377A/en
Anticipated expiration legal-status Critical
Publication of WO2004042851A3 publication Critical patent/WO2004042851A3/en
Priority to US12/074,642 priority patent/US7842535B2/en
Priority to US12/333,443 priority patent/US7683359B2/en
Priority to US12/945,079 priority patent/US8017430B2/en
Priority to US13/204,229 priority patent/US8384058B2/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M10/00—Secondary cells; Manufacture thereof
    • H01M10/05—Accumulators with non-aqueous electrolyte
    • H01M10/052—Li-accumulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/134—Electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/13—Electrodes for accumulators with non-aqueous electrolyte, e.g. for lithium-accumulators; Processes of manufacture thereof
    • H01M4/139—Processes of manufacture
    • H01M4/1395—Processes of manufacture of electrodes based on metals, Si or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/36—Selection of substances as active materials, active masses, active liquids
    • H01M4/38—Selection of substances as active materials, active masses, active liquids of elements or alloys
    • H01M4/386—Silicon or alloys based on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/64—Carriers or collectors
    • H01M4/66—Selection of materials
    • H01M4/661—Metal or alloys, e.g. alloy coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M2004/026—Electrodes composed of, or comprising, active material characterised by the polarity
    • H01M2004/027—Negative electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01M—PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY
    • H01M4/00—Electrodes
    • H01M4/02—Electrodes composed of, or comprising, active material
    • H01M4/04—Processes of manufacture in general
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
    • Y02E60/10—Energy storage using batteries
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/90—Bulk effect device making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/81—Of specified metal or metal alloy composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/948—Energy storage/generating using nanostructure, e.g. fuel cell, battery
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49108—Electric battery cell making

Definitions

  • the present invention relates to structured silicon anodes for lithium battery applications.
  • Silicon is recognised as a potentially high energy per unit volume host material for lithium in lithium battery applications 1 . Attempts at realising this potential have met with only partial success when nano-composites of silicon powder and carbon black have been used 2 .
  • the major technical problem associated with the use of silicon/lithium appears to be the mechanical failure brought about by the repeated large volume expansion associated with alloying 10 ' 3 .
  • Metallic and intermetallic anodic host materials, other than layer materials such as graphite, are reported to disintegrate after a few lithium insertion/extraction cycles 3,4 unless in fine powder form (sub-micron range) . Since we are interested in finding a way to make a lithium battery integrated onto a silicon chip we need to find a solution to. this materials problem. It is envisaged that the principal applications area for lithium batteries integrated into a chip would be in the medical field. Thus the well- developed practice of cochlea implants appears to be an area that would benefit from an integrated battery supply 5 .
  • This invention seeks to realise the potential of the silicon-lithium system to allow the possibility of a lithium battery integrated on to a silicon chip.
  • this invention provides a method of fabricating sub-micron silicon electrode structures on a silicon wafer.
  • these structures comprise pillars.
  • the basic cell diagram can be represented as Li
  • the cathodic process is, discharge of lithium onto silicon to form an alloy (charging)
  • the anodic process is lithium extraction or de-alloying (discharging) .
  • the EMF data reported by Wen and Huggins 6 for the liquid system at 415°C is shown bracketed below and the solid system at room temperature 7 is shown un-bracketed below.
  • Figure 1 is a schematic view of a structured electrode
  • Figure 2 shows one of a series of CV scan sets
  • Figure 3 shows results for a series of galvanostratic measurements
  • Figure 4 shows pictures of the structure
  • figure 5 shows SEM pictures of the structure
  • FIG. 6 shows a lithium battery in accordance with the present invention.
  • the electrochemical discharge of lithium on silicon and its subsequent chemical reaction destroys the silicon lattice, giving rise to the swelling of the solid, producing amorphous Si/Li phases 13 .
  • the first new phase to appear in the system is Li ⁇ 2 Si 7 .
  • This compound, and all the rest up to Li, is a so-called Zintl-Phase Compound (ZPC) , and consists of simple, electropositive, cations and complex co-valently bound, multiply charged, electronegative, anions.
  • ZPC Zintl-Phase Compound
  • the charge ascribed to the "ions” is purely notional: the actual charge (depending upon definition) is less than the formal value and may be considerably less, hence the bulk lithium will be referred to as Li° and bulk silicon as Si n °.
  • Lithium excess diffuses (via a vacancy mechanism) through the compact ZPC film to react with silicon at the Si/ZPC interface, thickening the ZPC film, without void formation.
  • Li (ads) is Li adsorbed on ZPC; V is a Li° vacancy in ZPC)
  • the diffusion coefficient, D, for Li in crystalline Si 14 is ⁇ 10 ⁇ 14 cm 2 s _1 , Li in ZPC is expected to be faster; a value of D 10 ⁇ 12 cm 2 s _1 would be enough to account for all the processes carried out in this study.
  • This model for ZPC film formation is in many ways analogous to the model of Si0 2 layer formation on silicon due to Deal and Grove 15 : but the details are different and will be treated elsewhere.
  • the model for ZPC decomposition is, in broad terms, the reverse of the above steps.
  • Discharge of Li° at the electrolyte interface produces a surface vacancy in the ZPC.
  • Locally Li° moves into the vacancy so the vacancy diffuses back to the ZPC/Si interface: at the interface Si n rejoins the Si phase (where it is said to be polycrystalline 13 ) and vacancies coalesce to produce larger void spaces.
  • Such a process has been described by Beaulieu et al l ⁇ for lithium removal from silicon/tin alloys.
  • pillars of diameter (d) -0.3 microns and 6 micron height (H) there is large scope for further increasing the surface-to-volume ratio of the pillar construction, for example, pillars of diameter (d) -0.3 microns and 6 micron height (H) .
  • the surface area of such a pillar structure is ⁇ 4FH/d, which is the basis of the much improved characteristics.
  • This method employs cesium chloride as the resist in the lithographic step in the fabrication of pillar arrays. It works as follows. A thin film of CsCl is vacuum deposited on the clean, hydrophilic, surface of the Si substrate. This system is then exposed to the atmosphere at a controlled relative humidity. A multilayer of water adsorbes on the surface, the CsCl is soluble in the water layer (being more soluble at places of higher radius of curvature) .
  • the CsCl re-organises into a distribution of hemispherical islands, driven by the excess surface energy associated with CsCl surface curvature.
  • Such arrays are useful in making structures for various studies involving nano-scale phenomena.
  • reactive ion etching is preferably used, with the islands acting as X masks so that removal of the surrounding silicon forms the desired pillar structures .
  • the process variables are: CsCl film thickness (L) ; humidity (RH) , time of exposure (t) .
  • the resulting island array has a Gaussian distribution of diameters, average diameter ( ⁇ d>) standard deviation ( ⁇ s) and surface fractional coverage (F) .
  • RIE reactive ion etching
  • the RIE process variables are: feed-gas composition, flow rate and chamber pressure; RF power; dc bias; etch time.
  • the results are characterised by the etch depth, corresponding to pillar height (H) , and the wall angle, namely the angle that the pillar wall makes with the wafer plane; it is chosen in this study to be close to 90°.
  • the examples reported in this work were etched in a Oxford Plasmalab 80 apparatus.
  • the etch gas was (0 2 :Ar: CHF 3 ) in the ratio 1:10:20; feed rate 20sccm; chamber pressure, 50 milli pascals; RF power, 73 watts; dc bias 200V.
  • the silicon samples were washed in water; etched for 20 seconds in NH 4 OH(28w% NH 3 ) : H 2 0 2 (lOOv/v) : H 2 0 in equal volume ratios; the etchant was flooded away with de-ionized water and blow dried.
  • the structures may also be fabricated by other known techniques, such as photolithography, which produce regular arrays of features rather than the scattered distribution produced by island lithography.
  • Figure 1 is a schematic view of a structured electrode, in accordance with the invention and as used in the following tests, it shows a part sectional view of the anode in which the pillars 2 can clearly be seen on the silicon wafer 3.
  • Figure 6 shows a lithium battery, comprising a typical embodiment of the present invention, and including an anode 1, a cathode 4, a polymer electrolyte 5, a first strip 6 representing a rectifier circuit connected to a coil encircling the anode for charging purposes, a second strip 7 representing the output circuit (driven by the battery) , and a pair of wires 8 for connection to the device to be driven.
  • Electrochemical tests were performed in a three- electrode, glass, cell where the Si sample is the working electrode and metallic Li is used for both the counter and reference electrodes.
  • a I M solution of LiC10 4 (Merck Selectipura) in ethylene carbonate : diethyl carbonate (Merck Selectipura), (1:1) w/w solvent was used as the electrolyte.
  • the cell was assembled under a dry argon atmosphere in a glove box.
  • Ohmic contact was made to the rear side of the silicon samples electrodes using a 1:1 In-Ga eutectic alloy 12 .
  • the electrode area was delineated using an 0-ring configuration in a PTFE holder. No adhesive is used and a good electrolyte/atmosphere seal is obtained.
  • epoxy adhesive used to mount a Si electrode, contaminated the active electrode surface causing spurious currents at high voltages (>2V) .
  • Electrochemical behaviour of the cell was investigated by cyclic voltammetry (CV) and by galvanostatic measurement (voltage vs. time at constant current), using an electrochemical workstation (VMP PerkinElmerTM Instruments) .
  • the capacity referred to here is the total charge inserted into the projected electrode surface area exposed to the electrolyte (this ignores any surface area due to structuring) , given as mAhcrrf 2 (micro Amp hours cm -2 ) .
  • the electrode potential is a measure of the surface lithium activity.
  • the first cathodic feature is the rapid increase in current at ⁇ 330 mV that, according to room temperature data 7 , corresponds to the presence of Li ⁇ 2 Si .
  • the lowest potential reached is 25mV and this is taken to be associated with the presence of higher Li compounds, e.g. Li 2 ⁇ Si5.
  • the cycling sequence shows a progressive "activation" of the sample, associated with increasing breakdown of the crystalline silicon structure (see discussion) .
  • the anodic, part of the CV curve is associated with progressive de-lithiation of the electrode according to the various ZPC equilibrium potentials.
  • the capacity (260mAhcrrf 2 ) of the electrodes is roughly comparable to the pillar volume being converted to Li ⁇ 2 Si , while for the slower scan rates the capacity exceeds that of the pillar volume. The latter results point to the participation of the substrate in the alloying/de-alloying process.
  • Figure 3 shows the results for a series of galvanostratic measurements on structured Si at two different charge/discharge current densities (details in caption) .
  • Figure 4 shows the structure of the K-series of silicon electrodes that were used in this study and the effects of extensive galvanostatic cycling upon that structure. The structure are clearly intact, but at the higher current density slight cracking of the bulk Si surface, below the pillars, is observed.
  • Figure 5 shows the SEM pictures of the structures obtained on planar (un-pillared) Si electrodes before cycling and, separately, after galvanostatic cycling. When cycled at the lower current densities, the surface is deformed, though crack formation does not occur. Cycling at higher current densities produces wide cracks.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Secondary Cells (AREA)
  • Silicon Compounds (AREA)
PCT/GB2003/004783 2002-11-05 2003-11-05 Structured silicon anode Ceased WO2004042851A2 (en)

Priority Applications (11)

Application Number Priority Date Filing Date Title
EP03810528A EP1576680B1 (en) 2002-11-05 2003-11-05 Structured silicon anode
AU2003276468A AU2003276468A1 (en) 2002-11-05 2003-11-05 Structured silicon anode
JP2004549349A JP4607594B2 (ja) 2002-11-05 2003-11-05 構造化シリコンアノード
HK06106561.0A HK1086669B (en) 2002-11-05 2003-11-05 Structured silicon anode
US10/533,822 US7402829B2 (en) 2002-11-05 2003-11-05 Structured silicon anode
CA2504634A CA2504634C (en) 2002-11-05 2003-11-05 Structured silicon anode
IL168377A IL168377A (en) 2002-11-05 2005-05-03 Structured silicon anode
US12/074,642 US7842535B2 (en) 2002-11-05 2008-03-04 Structured silicon anode
US12/333,443 US7683359B2 (en) 2002-11-05 2008-12-12 Structured silicon anode
US12/945,079 US8017430B2 (en) 2002-11-05 2010-11-12 Structured silicon anode
US13/204,229 US8384058B2 (en) 2002-11-05 2011-08-05 Structured silicon anode

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB0225779A GB2395059B (en) 2002-11-05 2002-11-05 Structured silicon anode
GB0225779.8 2002-11-05

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US10533822 A-371-Of-International 2003-11-05
US12/074,642 Division US7842535B2 (en) 2002-11-05 2008-03-04 Structured silicon anode

Publications (2)

Publication Number Publication Date
WO2004042851A2 true WO2004042851A2 (en) 2004-05-21
WO2004042851A3 WO2004042851A3 (en) 2005-07-14

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PCT/GB2003/004783 Ceased WO2004042851A2 (en) 2002-11-05 2003-11-05 Structured silicon anode

Country Status (11)

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US (5) US7402829B2 (https=)
EP (2) EP1576680B1 (https=)
JP (3) JP4607594B2 (https=)
KR (1) KR100785695B1 (https=)
CN (1) CN100399606C (https=)
AU (1) AU2003276468A1 (https=)
CA (1) CA2504634C (https=)
GB (1) GB2395059B (https=)
IL (1) IL168377A (https=)
RU (1) RU2325008C2 (https=)
WO (1) WO2004042851A2 (https=)

Cited By (44)

* Cited by examiner, † Cited by third party
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WO2007083152A1 (en) * 2006-01-23 2007-07-26 Nexeon Ltd Method of etching a silicon-based material
US7402829B2 (en) 2002-11-05 2008-07-22 Nexeon Ltd. Structured silicon anode
US8101298B2 (en) 2006-01-23 2012-01-24 Nexeon Ltd. Method of fabricating fibres composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
WO2012017998A1 (ja) 2010-08-05 2012-02-09 和光純薬工業株式会社 非水系電解液、その製造法、及び該電解液を用いた非水系電解液電池
WO2012017999A1 (ja) 2010-08-05 2012-02-09 和光純薬工業株式会社 非水系電解液及びそれを用いた非水系電解液電池
US8642211B2 (en) 2007-07-17 2014-02-04 Nexeon Limited Electrode including silicon-comprising fibres and electrochemical cells including the same
US8658313B2 (en) 2009-09-30 2014-02-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing electrode, and method for manufacturing power storage device and power generation and storage device having the electrode
WO2014063970A2 (en) 2012-10-25 2014-05-01 Morgan Advanced Materials Plc. Laminated materials, methods and apparatus for making same, and uses thereof
US8772174B2 (en) 2010-04-09 2014-07-08 Nexeon Ltd. Method of fabricating structured particles composed of silicon or silicon-based material and their use in lithium rechargeable batteries
US8870975B2 (en) 2007-07-17 2014-10-28 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US8945774B2 (en) 2010-06-07 2015-02-03 Nexeon Ltd. Additive for lithium ion rechageable battery cells
US8962183B2 (en) 2009-05-07 2015-02-24 Nexeon Limited Method of making silicon anode material for rechargeable cells
US9012079B2 (en) 2007-07-17 2015-04-21 Nexeon Ltd Electrode comprising structured silicon-based material
US9011702B2 (en) 2009-09-30 2015-04-21 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing electrode for power storage device and method for manufacturing power storage device
US9184438B2 (en) 2008-10-10 2015-11-10 Nexeon Ltd. Method of fabricating structured particles composed of silicon or a silicon-based material and their use in lithium rechargeable batteries
US9252426B2 (en) 2007-05-11 2016-02-02 Nexeon Limited Silicon anode for a rechargeable battery
US9608272B2 (en) 2009-05-11 2017-03-28 Nexeon Limited Composition for a secondary battery cell
US9647263B2 (en) 2010-09-03 2017-05-09 Nexeon Limited Electroactive material
WO2017208944A1 (ja) 2016-05-30 2017-12-07 セントラル硝子株式会社 非水系電解液及びそれを用いた非水系電解液電池
US9853292B2 (en) 2009-05-11 2017-12-26 Nexeon Limited Electrode composition for a secondary battery cell
US9871248B2 (en) 2010-09-03 2018-01-16 Nexeon Limited Porous electroactive material
KR101863362B1 (ko) 2009-10-22 2018-05-31 로날드 앤쏘니 로제스키 칼라 스톱을 포함하는 전극
WO2018190304A1 (ja) 2017-04-10 2018-10-18 セントラル硝子株式会社 ホスホリルイミド塩の製造方法、該塩を含む非水電解液の製造方法及び非水二次電池の製造方法
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