JP3364081B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法

Info

Publication number
JP3364081B2
JP3364081B2 JP05373796A JP5373796A JP3364081B2 JP 3364081 B2 JP3364081 B2 JP 3364081B2 JP 05373796 A JP05373796 A JP 05373796A JP 5373796 A JP5373796 A JP 5373796A JP 3364081 B2 JP3364081 B2 JP 3364081B2
Authority
JP
Japan
Prior art keywords
film
substrate
silicon
insulating film
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP05373796A
Other languages
English (en)
Japanese (ja)
Other versions
JPH08288522A (ja
Inventor
舜平 山崎
康行 荒井
聡 寺本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP05373796A priority Critical patent/JP3364081B2/ja
Publication of JPH08288522A publication Critical patent/JPH08288522A/ja
Application granted granted Critical
Publication of JP3364081B2 publication Critical patent/JP3364081B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3806—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using crystallisation-enhancing elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0225—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials using crystallisation-promoting species, e.g. using a Ni catalyst
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7412—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/743—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7432—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/928—Front and rear surface processing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Recrystallisation Techniques (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Helmets And Other Head Coverings (AREA)
  • Electroluminescent Light Sources (AREA)
JP05373796A 1995-02-16 1996-02-15 半導体装置の作製方法 Expired - Fee Related JP3364081B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05373796A JP3364081B2 (ja) 1995-02-16 1996-02-15 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP7-53219 1995-02-16
JP5321995 1995-02-16
JP05373796A JP3364081B2 (ja) 1995-02-16 1996-02-15 半導体装置の作製方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2000195962A Division JP3934310B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195959A Division JP3369539B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195960A Division JP3364197B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JPH08288522A JPH08288522A (ja) 1996-11-01
JP3364081B2 true JP3364081B2 (ja) 2003-01-08

Family

ID=12936724

Family Applications (6)

Application Number Title Priority Date Filing Date
JP05373796A Expired - Fee Related JP3364081B2 (ja) 1995-02-16 1996-02-15 半導体装置の作製方法
JP2000195960A Expired - Fee Related JP3364197B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195962A Expired - Lifetime JP3934310B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195959A Expired - Fee Related JP3369539B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2004173559A Expired - Lifetime JP3934629B2 (ja) 1995-02-16 2004-06-11 半導体装置、ヘルメット、フロントガラス及び風防ガラスの作製方法
JP2004173557A Expired - Lifetime JP3934628B2 (ja) 1995-02-16 2004-06-11 半導体装置の作製方法

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP2000195960A Expired - Fee Related JP3364197B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195962A Expired - Lifetime JP3934310B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2000195959A Expired - Fee Related JP3369539B2 (ja) 1995-02-16 2000-06-29 半導体装置の作製方法
JP2004173559A Expired - Lifetime JP3934629B2 (ja) 1995-02-16 2004-06-11 半導体装置、ヘルメット、フロントガラス及び風防ガラスの作製方法
JP2004173557A Expired - Lifetime JP3934628B2 (ja) 1995-02-16 2004-06-11 半導体装置の作製方法

Country Status (3)

Country Link
US (7) US5821138A (https=)
JP (6) JP3364081B2 (https=)
KR (5) KR100288111B1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2001047A1 (en) 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device
CN102169850A (zh) * 2006-04-28 2011-08-31 株式会社半导体能源研究所 半导体集成电路及其制造方法、使用该电路的半导体装置

Families Citing this family (352)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0445535B1 (en) 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Method of forming an oxide film
US7465679B1 (en) * 1993-02-19 2008-12-16 Semiconductor Energy Laboratory Co., Ltd. Insulating film and method of producing semiconductor device
JP3637069B2 (ja) 1993-03-12 2005-04-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6074901A (en) * 1993-12-03 2000-06-13 Semiconductor Energy Laboratory Co., Ltd. Process for crystallizing an amorphous silicon film and apparatus for fabricating the same
JPH0869967A (ja) 1994-08-26 1996-03-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP2900229B2 (ja) 1994-12-27 1999-06-02 株式会社半導体エネルギー研究所 半導体装置およびその作製方法および電気光学装置
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
US5757456A (en) * 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
KR100265179B1 (ko) * 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
TW384412B (en) 1995-11-17 2000-03-11 Semiconductor Energy Lab Display device
US6800875B1 (en) 1995-11-17 2004-10-05 Semiconductor Energy Laboratory Co., Ltd. Active matrix electro-luminescent display device with an organic leveling layer
JPH09146108A (ja) * 1995-11-17 1997-06-06 Semiconductor Energy Lab Co Ltd 液晶表示装置およびその駆動方法
TW309633B (https=) * 1995-12-14 1997-07-01 Handotai Energy Kenkyusho Kk
US6204101B1 (en) * 1995-12-15 2001-03-20 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP3645379B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3729955B2 (ja) * 1996-01-19 2005-12-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3645378B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5985740A (en) 1996-01-19 1999-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device including reduction of a catalyst
JP3645380B2 (ja) 1996-01-19 2005-05-11 株式会社半導体エネルギー研究所 半導体装置の作製方法、情報端末、ヘッドマウントディスプレイ、ナビゲーションシステム、携帯電話、ビデオカメラ、投射型表示装置
US6478263B1 (en) 1997-01-17 2002-11-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and its manufacturing method
US5888858A (en) 1996-01-20 1999-03-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and fabrication method thereof
US6180439B1 (en) 1996-01-26 2001-01-30 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device
US7056381B1 (en) 1996-01-26 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Fabrication method of semiconductor device
US6465287B1 (en) * 1996-01-27 2002-10-15 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device using a metal catalyst and high temperature crystallization
US6063654A (en) * 1996-02-20 2000-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a thin film transistor involving laser treatment
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
TW335503B (en) 1996-02-23 1998-07-01 Semiconductor Energy Lab Kk Semiconductor thin film and manufacturing method and semiconductor device and its manufacturing method
US6100562A (en) * 1996-03-17 2000-08-08 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
US6133119A (en) 1996-07-08 2000-10-17 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method manufacturing same
EP1758169A3 (en) 1996-08-27 2007-05-23 Seiko Epson Corporation Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same
CN1173315C (zh) * 1996-09-19 2004-10-27 精工爱普生株式会社 矩阵式显示元件及其制造方法
US6590230B1 (en) * 1996-10-15 2003-07-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TW451284B (en) * 1996-10-15 2001-08-21 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
USRE38466E1 (en) 1996-11-12 2004-03-16 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
US6127199A (en) * 1996-11-12 2000-10-03 Seiko Epson Corporation Manufacturing method of active matrix substrate, active matrix substrate and liquid crystal display device
JPH10199807A (ja) 1996-12-27 1998-07-31 Semiconductor Energy Lab Co Ltd 結晶性珪素膜の作製方法
JPH10200114A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 薄膜回路
JPH10198292A (ja) 1996-12-30 1998-07-31 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6011275A (en) 1996-12-30 2000-01-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
TW386238B (en) 1997-01-20 2000-04-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP3856889B2 (ja) 1997-02-06 2006-12-13 株式会社半導体エネルギー研究所 反射型表示装置および電子デバイス
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP3544280B2 (ja) 1997-03-27 2004-07-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3856901B2 (ja) 1997-04-15 2006-12-13 株式会社半導体エネルギー研究所 表示装置
US6307214B1 (en) 1997-06-06 2001-10-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor thin film and semiconductor device
JP4566294B2 (ja) * 1997-06-06 2010-10-20 株式会社半導体エネルギー研究所 連続粒界結晶シリコン膜、半導体装置
JP4566295B2 (ja) * 1997-06-10 2010-10-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6501094B1 (en) 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
JPH1126733A (ja) 1997-07-03 1999-01-29 Seiko Epson Corp 薄膜デバイスの転写方法、薄膜デバイス、薄膜集積回路装置，アクティブマトリクス基板、液晶表示装置および電子機器
JP4017706B2 (ja) * 1997-07-14 2007-12-05 株式会社半導体エネルギー研究所 半導体装置
US5940693A (en) * 1997-07-15 1999-08-17 Sharp Laboratories Of America, Inc. Selective silicide thin-film transistor and method for same
JPH1140498A (ja) 1997-07-22 1999-02-12 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4318768B2 (ja) * 1997-07-23 2009-08-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3116085B2 (ja) * 1997-09-16 2000-12-11 東京農工大学長 半導体素子形成法
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
KR100271043B1 (ko) * 1997-11-28 2000-11-01 구본준, 론 위라하디락사 액정표시장치의 기판 및 그 제조방법(liquid crystal display and method of manufacturing the same)
JP4236722B2 (ja) 1998-02-05 2009-03-11 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3809733B2 (ja) * 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
JP4126747B2 (ja) 1998-02-27 2008-07-30 セイコーエプソン株式会社 ３次元デバイスの製造方法
US6228693B1 (en) 1998-06-05 2001-05-08 Sharp Laboratories Of America, Inc. Selected site, metal-induced, continuous crystallization method
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4493750B2 (ja) * 1998-07-15 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7153729B1 (en) * 1998-07-15 2006-12-26 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
JP4493749B2 (ja) * 1998-07-15 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4493752B2 (ja) * 1998-07-17 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4493751B2 (ja) * 1998-07-17 2010-06-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7084016B1 (en) 1998-07-17 2006-08-01 Semiconductor Energy Laboratory Co., Ltd. Crystalline semiconductor thin film, method of fabricating the same, semiconductor device, and method of fabricating the same
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
JP2000058839A (ja) 1998-08-05 2000-02-25 Semiconductor Energy Lab Co Ltd 半導体素子からなる半導体回路を備えた半導体装置およびその作製方法
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000174282A (ja) * 1998-12-03 2000-06-23 Semiconductor Energy Lab Co Ltd 半導体装置
US6475836B1 (en) 1999-03-29 2002-11-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6251788B1 (en) * 1999-05-03 2001-06-26 Winbond Electronics Corp. Method of integrated circuit polishing without dishing effects
US6623861B2 (en) 2001-04-16 2003-09-23 Battelle Memorial Institute Multilayer plastic substrates
US20100330748A1 (en) * 1999-10-25 2010-12-30 Xi Chu Method of encapsulating an environmentally sensitive device
US7198832B2 (en) * 1999-10-25 2007-04-03 Vitex Systems, Inc. Method for edge sealing barrier films
US6524877B1 (en) * 1999-10-26 2003-02-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method of fabricating the same
JP4104800B2 (ja) * 1999-12-08 2008-06-18 三菱電機株式会社 液晶表示装置およびｔｆｔパネル
US7060153B2 (en) 2000-01-17 2006-06-13 Semiconductor Energy Laboratory Co., Ltd. Display device and method of manufacturing the same
US20010053559A1 (en) * 2000-01-25 2001-12-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating display device
TW494447B (en) 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7023021B2 (en) * 2000-02-22 2006-04-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4118484B2 (ja) 2000-03-06 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2001257350A (ja) 2000-03-08 2001-09-21 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4118485B2 (ja) 2000-03-13 2008-07-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4700160B2 (ja) 2000-03-13 2011-06-15 株式会社半導体エネルギー研究所 半導体装置
JP4683688B2 (ja) 2000-03-16 2011-05-18 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
JP4393662B2 (ja) * 2000-03-17 2010-01-06 株式会社半導体エネルギー研究所 液晶表示装置の作製方法
GB0006958D0 (en) * 2000-03-23 2000-05-10 Koninkl Philips Electronics Nv Method of manufacturing a transistor
US6789910B2 (en) 2000-04-12 2004-09-14 Semiconductor Energy Laboratory, Co., Ltd. Illumination apparatus
US7579203B2 (en) 2000-04-25 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6900084B1 (en) 2000-05-09 2005-05-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a display device
US7088322B2 (en) * 2000-05-12 2006-08-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6875674B2 (en) * 2000-07-10 2005-04-05 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device with fluorine concentration
US7030551B2 (en) * 2000-08-10 2006-04-18 Semiconductor Energy Laboratory Co., Ltd. Area sensor and display apparatus provided with an area sensor
US6605826B2 (en) 2000-08-18 2003-08-12 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device and display device
JP2002200936A (ja) 2000-11-06 2002-07-16 Semiconductor Energy Lab Co Ltd 表示装置及び車両
US6954747B1 (en) * 2000-11-14 2005-10-11 Microsoft Corporation Methods for comparing versions of a program
CN100496896C (zh) * 2000-12-01 2009-06-10 东洋橡膠工业株式会社 研磨垫
US6759313B2 (en) * 2000-12-05 2004-07-06 Semiconductor Energy Laboratory Co., Ltd Method of fabricating a semiconductor device
JP4968982B2 (ja) * 2000-12-15 2012-07-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW525402B (en) * 2001-01-18 2003-03-21 Semiconductor Energy Lab Process for producing a light emitting device
SG160191A1 (en) 2001-02-28 2010-04-29 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7071037B2 (en) * 2001-03-06 2006-07-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6830994B2 (en) * 2001-03-09 2004-12-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device having a crystallized semiconductor film
JP2002280167A (ja) * 2001-03-16 2002-09-27 Pioneer Electronic Corp 有機ｅｌ表示パネル
GB0108309D0 (en) * 2001-04-03 2001-05-23 Koninkl Philips Electronics Nv Matrix array devices with flexible substrates
JP4860833B2 (ja) * 2001-04-10 2012-01-25 ゲットナー・ファンデーション・エルエルシー 薄膜トランジスタの製造方法
TW574753B (en) * 2001-04-13 2004-02-01 Sony Corp Manufacturing method of thin film apparatus and semiconductor device
TW548860B (en) 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US7211828B2 (en) 2001-06-20 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic apparatus
TW546857B (en) 2001-07-03 2003-08-11 Semiconductor Energy Lab Light-emitting device, method of manufacturing a light-emitting device, and electronic equipment
JP4323115B2 (ja) * 2001-07-06 2009-09-02 シャープ株式会社 機能性パネルの製造方法
TW564471B (en) 2001-07-16 2003-12-01 Semiconductor Energy Lab Semiconductor device and peeling off method and method of manufacturing semiconductor device
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP5202673B2 (ja) * 2001-07-27 2013-06-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5057619B2 (ja) * 2001-08-01 2012-10-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
TW554398B (en) * 2001-08-10 2003-09-21 Semiconductor Energy Lab Method of peeling off and method of manufacturing semiconductor device
TW558743B (en) 2001-08-22 2003-10-21 Semiconductor Energy Lab Peeling method and method of manufacturing semiconductor device
JP4166455B2 (ja) 2001-10-01 2008-10-15 株式会社半導体エネルギー研究所 偏光フィルム及び発光装置
JP3913521B2 (ja) * 2001-10-23 2007-05-09 共同印刷株式会社 液晶表示装置用の基材、液晶表示装置の電極基材の製造方法及び液晶表示装置の製造方法
KR100944886B1 (ko) * 2001-10-30 2010-03-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제조 방법
TWI264121B (en) * 2001-11-30 2006-10-11 Semiconductor Energy Lab A display device, a method of manufacturing a semiconductor device, and a method of manufacturing a display device
JP2003229548A (ja) * 2001-11-30 2003-08-15 Semiconductor Energy Lab Co Ltd 乗物、表示装置、および半導体装置の作製方法
US6815723B2 (en) * 2001-12-28 2004-11-09 Semiconductor Energy Laboratory Co., Ltd. Light emitting device, method of manufacturing the same, and manufacturing apparatus therefor
JP4021194B2 (ja) 2001-12-28 2007-12-12 シャープ株式会社 薄膜トランジスタ装置の製造方法
US6953735B2 (en) * 2001-12-28 2005-10-11 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating a semiconductor device by transferring a layer to a support with curvature
JP2003208108A (ja) * 2002-01-10 2003-07-25 Matsushita Electric Ind Co Ltd 表示装置およびその製造方法
AU2002246316A1 (en) * 2002-04-08 2003-10-27 Council Of Scientific And Industrial Research Process for the production of neodymium-iron-boron permanent magnet alloy powder
US8808457B2 (en) 2002-04-15 2014-08-19 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
US8900366B2 (en) 2002-04-15 2014-12-02 Samsung Display Co., Ltd. Apparatus for depositing a multilayer coating on discrete sheets
WO2003095579A1 (en) * 2002-05-13 2003-11-20 Jsr Corporation Composition and method for temporarily fixing solid
US7164155B2 (en) * 2002-05-15 2007-01-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US6927073B2 (en) * 2002-05-16 2005-08-09 Nova Research, Inc. Methods of fabricating magnetoresistive memory devices
US7230271B2 (en) * 2002-06-11 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Light emitting device comprising film having hygroscopic property and transparency and manufacturing method thereof
JP2004071874A (ja) * 2002-08-07 2004-03-04 Sharp Corp 半導体装置製造方法および半導体装置
US7176483B2 (en) * 2002-08-12 2007-02-13 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
TWI338346B (en) 2002-09-20 2011-03-01 Semiconductor Energy Lab Display device and manufacturing method thereof
JP2004140267A (ja) * 2002-10-18 2004-05-13 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
AU2003275614A1 (en) 2002-10-30 2004-05-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20040039693A (ko) * 2002-11-04 2004-05-12 비오이 하이디스 테크놀로지 주식회사 액정디스플레이의 제조방법
CN1711633A (zh) 2002-11-08 2005-12-21 皇家飞利浦电子股份有限公司 柔性装置及其制造方法
KR100925456B1 (ko) * 2002-11-12 2009-11-06 삼성전자주식회사 액정 표시 장치의 제조 방법
US7274413B1 (en) * 2002-12-06 2007-09-25 United States Of America As Represented By The Secretary Of The Navy Flexible video display apparatus and method
KR100484109B1 (ko) * 2002-12-14 2005-04-18 삼성에스디아이 주식회사 기판 제조방법, 이 기판제조방법을 이용한 유기 전계발광표시장치의 제조방법 및 유기 전계 발광 표시장치
US6881975B2 (en) 2002-12-17 2005-04-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method of manufacturing the same
JP4554152B2 (ja) * 2002-12-19 2010-09-29 株式会社半導体エネルギー研究所 半導体チップの作製方法
JP4101643B2 (ja) * 2002-12-26 2008-06-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7230316B2 (en) 2002-12-27 2007-06-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transferred integrated circuit
JP4373085B2 (ja) 2002-12-27 2009-11-25 株式会社半導体エネルギー研究所 半導体装置の作製方法、剥離方法及び転写方法
EP1434264A3 (en) * 2002-12-27 2017-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method using the transfer technique
US7064055B2 (en) * 2002-12-31 2006-06-20 Massachusetts Institute Of Technology Method of forming a multi-layer semiconductor structure having a seamless bonding interface
US20040124538A1 (en) * 2002-12-31 2004-07-01 Rafael Reif Multi-layer integrated semiconductor structure
AU2003300040A1 (en) * 2002-12-31 2004-07-29 Massachusetts Institute Of Technology Multi-layer integrated semiconductor structure having an electrical shielding portion
CN100392861C (zh) * 2003-01-08 2008-06-04 株式会社半导体能源研究所 半导体器件及其制作方法
US7436050B2 (en) 2003-01-22 2008-10-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having a flexible printed circuit
JP2004247373A (ja) 2003-02-12 2004-09-02 Semiconductor Energy Lab Co Ltd 半導体装置
TWI328837B (en) * 2003-02-28 2010-08-11 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
KR100940114B1 (ko) 2003-03-03 2010-02-02 매그나칩 반도체 유한회사 능동 매트릭스형 액정 디스플레이의 전극 제조방법
JP4526771B2 (ja) 2003-03-14 2010-08-18 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7510913B2 (en) 2003-04-11 2009-03-31 Vitex Systems, Inc. Method of making an encapsulated plasma sensitive device
US7648925B2 (en) 2003-04-11 2010-01-19 Vitex Systems, Inc. Multilayer barrier stacks and methods of making multilayer barrier stacks
US7592239B2 (en) 2003-04-30 2009-09-22 Industry University Cooperation Foundation-Hanyang University Flexible single-crystal film and method of manufacturing the same
JP2004349513A (ja) * 2003-05-22 2004-12-09 Seiko Epson Corp 薄膜回路装置及びその製造方法、並びに電気光学装置、電子機器
JP4316960B2 (ja) 2003-08-22 2009-08-19 株式会社半導体エネルギー研究所 装置
US7253391B2 (en) 2003-09-19 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Optical sensor device and electronic apparatus
CN100477240C (zh) 2003-10-06 2009-04-08 株式会社半导体能源研究所 半导体器件以及制造该器件的方法
EP1528594B1 (en) * 2003-10-28 2019-05-29 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2005136214A (ja) 2003-10-30 2005-05-26 Nec Corp 薄膜デバイス基板の製造方法
JP4507560B2 (ja) 2003-10-30 2010-07-21 日本電気株式会社 薄膜デバイス基板の製造方法
KR20050053883A (ko) * 2003-12-03 2005-06-10 삼성전자주식회사 표시 장치용 박막 트랜지스터 표시판
US7130234B2 (en) * 2003-12-12 2006-10-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US7768405B2 (en) * 2003-12-12 2010-08-03 Semiconductor Energy Laboratory Co., Ltd Semiconductor device and manufacturing method thereof
US7566640B2 (en) 2003-12-15 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit device, noncontact thin film integrated circuit device and method for manufacturing the same, and idtag and coin including the noncontact thin film integrated circuit device
US7727854B2 (en) 2003-12-19 2010-06-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
US7405665B2 (en) * 2003-12-19 2008-07-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, RFID tag and label-like object
US7271076B2 (en) * 2003-12-19 2007-09-18 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of thin film integrated circuit device and manufacturing method of non-contact type thin film integrated circuit device
US7508305B2 (en) * 2003-12-26 2009-03-24 Semiconductor Energy Laboratory Co., Ltd. Packing material, tag, certificate, paper money, and securities
US7566010B2 (en) 2003-12-26 2009-07-28 Semiconductor Energy Laboratory Co., Ltd. Securities, chip mounting product, and manufacturing method thereof
CN101916764A (zh) * 2004-01-23 2010-12-15 株式会社半导体能源研究所 膜状物品及其制作方法
CN100502018C (zh) * 2004-02-06 2009-06-17 株式会社半导体能源研究所 薄膜集成电路的制造方法和元件基片
TWI406688B (zh) 2004-02-26 2013-09-01 Semiconductor Energy Lab 運動器具，娛樂工具，和訓練工具
US7282380B2 (en) * 2004-03-25 2007-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4465715B2 (ja) * 2004-04-16 2010-05-19 セイコーエプソン株式会社 薄膜デバイス、集積回路、電気光学装置、電子機器
CN100481327C (zh) * 2004-04-28 2009-04-22 汉阳大学校产学协力团 柔性光电设备及其制造方法
US7202504B2 (en) 2004-05-20 2007-04-10 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and display device
US7452786B2 (en) * 2004-06-29 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film integrated circuit, and element substrate
US7534702B2 (en) 2004-06-29 2009-05-19 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP2006041135A (ja) * 2004-07-26 2006-02-09 Sumitomo Bakelite Co Ltd 電子デバイスおよびその製造方法
US20150287660A1 (en) 2007-01-05 2015-10-08 Semiconductor Energy Laboratory Co., Ltd. Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip
WO2006011665A1 (en) * 2004-07-30 2006-02-02 Semiconductor Energy Laboratory Co., Ltd. Laminating system, ic sheet, scroll of ic sheet, and method for manufacturing ic chip
JP4801337B2 (ja) * 2004-09-21 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101150996B1 (ko) * 2004-09-24 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치 제조방법
TWI372413B (en) * 2004-09-24 2012-09-11 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same, and electric appliance
JP4817636B2 (ja) * 2004-10-04 2011-11-16 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR20060042303A (ko) * 2004-11-09 2006-05-12 삼성전자주식회사 가요성 액정 표시 장치의 제조 방법
US7736964B2 (en) 2004-11-22 2010-06-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and method for manufacturing the same
US7307006B2 (en) * 2005-02-28 2007-12-11 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI413152B (zh) 2005-03-01 2013-10-21 半導體能源研究所股份有限公司 半導體裝置製造方法
CN101137912B (zh) 2005-03-07 2012-02-01 株式会社半导体能源研究所 元件基板、检查方法及半导体装置制造方法
US8390537B2 (en) 2005-03-11 2013-03-05 The Invention Science Fund I, Llc Method of assembling displays on substrates
US9153163B2 (en) * 2005-03-11 2015-10-06 The Invention Science Fund I, Llc Self assembly of elements for displays
US7977130B2 (en) 2006-08-03 2011-07-12 The Invention Science Fund I, Llc Method of assembling displays on substrates
US20060202944A1 (en) * 2005-03-11 2006-09-14 Searete Llc, A Limited Liability Corporation Of The State Of Delaware Elements for self assembling displays
US8860635B2 (en) * 2005-04-04 2014-10-14 The Invention Science Fund I, Llc Self assembling display with substrate
US8711063B2 (en) * 2005-03-11 2014-04-29 The Invention Science Fund I, Llc Self assembly of elements for displays
CN101151544B (zh) * 2005-03-28 2011-08-03 株式会社半导体能源研究所 半导体器件、其制造方法、及其测量方法
US7925391B2 (en) * 2005-06-02 2011-04-12 The Boeing Company Systems and methods for remote display of an enhanced image
JP2006344865A (ja) * 2005-06-10 2006-12-21 Toyoko Kagaku Co Ltd Ｓｏｉ基板及び該基板の製造方法
US20060286768A1 (en) * 2005-06-16 2006-12-21 Intel Corporation Method of supporting microelectronic wafer during backside processing
US7767498B2 (en) 2005-08-25 2010-08-03 Vitex Systems, Inc. Encapsulated devices and method of making
US7767543B2 (en) * 2005-09-06 2010-08-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a micro-electro-mechanical device with a folded substrate
US20070058114A1 (en) * 2005-09-12 2007-03-15 Asahi Glass Company, Limited Light control device
KR101299604B1 (ko) * 2005-10-18 2013-08-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
WO2007055299A1 (en) * 2005-11-09 2007-05-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN101305315B (zh) * 2005-11-11 2010-05-19 株式会社半导体能源研究所 形成具有功能性的层的方法及半导体器件的制造方法
KR101319468B1 (ko) * 2005-12-02 2013-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
US8900970B2 (en) 2006-04-28 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device using a flexible substrate
TWI424499B (zh) 2006-06-30 2014-01-21 半導體能源研究所股份有限公司 製造半導體裝置的方法
KR100805589B1 (ko) * 2006-07-04 2008-02-20 삼성에스디아이 주식회사 평판 표시 장치의 제조 방법
KR100759691B1 (ko) * 2006-07-04 2007-09-17 삼성에스디아이 주식회사 평판 표시 장치의 제조 방법
KR100804526B1 (ko) 2006-07-05 2008-02-20 삼성에스디아이 주식회사 유기 발광 디스플레이 장치의 제조방법
KR100804527B1 (ko) 2006-07-05 2008-02-20 삼성에스디아이 주식회사 박막 트랜지스턱 기판의 제조방법 및 이를 이용한 유기발광 디스플레이 장치의 제조방법
KR100795802B1 (ko) 2006-08-03 2008-01-17 삼성에스디아이 주식회사 평판 표시 장치의 제조방법
TWI433306B (zh) 2006-09-29 2014-04-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
US7713836B2 (en) * 2006-09-29 2010-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
WO2008047928A1 (en) * 2006-10-19 2008-04-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR100824881B1 (ko) 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824880B1 (ko) 2006-11-10 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
JP4852400B2 (ja) * 2006-11-27 2012-01-11 シャープ株式会社 半導体記憶装置及び半導体装置並びに表示装置、液晶表示装置及び受像機
CN101529596B (zh) * 2006-11-29 2011-12-14 株式会社半导体能源研究所 装置及其制造方法
KR100833738B1 (ko) 2006-11-30 2008-05-29 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
KR100824902B1 (ko) 2006-12-13 2008-04-23 삼성에스디아이 주식회사 유기 전계 발광 표시 장치 및 그 제조 방법
JP2007108785A (ja) * 2006-12-25 2007-04-26 Semiconductor Energy Lab Co Ltd 半導体装置
TWI343636B (en) * 2007-01-29 2011-06-11 Au Optronics Corp Substrate module and manufacturing method of flexible active matrix devices
US7968382B2 (en) 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4801608B2 (ja) * 2007-03-06 2011-10-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1970951A3 (en) 2007-03-13 2009-05-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
EP2372756A1 (en) 2007-03-13 2011-10-05 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device and manufacturing method thereof
JP5105918B2 (ja) * 2007-03-16 2012-12-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1976000A3 (en) * 2007-03-26 2009-05-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5268395B2 (ja) 2007-03-26 2013-08-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
EP1986238A3 (en) * 2007-04-27 2010-12-29 Semiconductor Energy Laboratory Co., Ltd. Resin molded optical semiconductor device and corresponding fabrication method
US7897482B2 (en) * 2007-05-31 2011-03-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP5459899B2 (ja) 2007-06-01 2014-04-02 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5208591B2 (ja) 2007-06-28 2013-06-12 株式会社半導体エネルギー研究所 発光装置、及び照明装置
JP5322408B2 (ja) 2007-07-17 2013-10-23 株式会社半導体エネルギー研究所 半導体装置及びその作製方法
EP2019425A1 (en) * 2007-07-27 2009-01-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP2009042255A (ja) 2007-08-06 2009-02-26 Hitachi Displays Ltd 液晶表示装置
JP5248240B2 (ja) 2007-08-30 2013-07-31 株式会社半導体エネルギー研究所 半導体装置
JP5388500B2 (ja) 2007-08-30 2014-01-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2009205669A (ja) 2008-01-31 2009-09-10 Semiconductor Energy Lab Co Ltd 半導体装置
KR101596698B1 (ko) 2008-04-25 2016-02-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치 제조 방법
WO2009139282A1 (en) * 2008-05-12 2009-11-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2009142309A1 (en) 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2009142310A1 (en) 2008-05-23 2009-11-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
US8053253B2 (en) 2008-06-06 2011-11-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5248412B2 (ja) 2008-06-06 2013-07-31 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2010041045A (ja) * 2008-07-09 2010-02-18 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
TWI475282B (zh) 2008-07-10 2015-03-01 Semiconductor Energy Lab 液晶顯示裝置和其製造方法
KR102026604B1 (ko) 2008-07-10 2019-10-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 장치 및 전자 기기
KR20110050580A (ko) 2008-08-04 2011-05-16 파나소닉 주식회사 플렉시블 반도체 장치 및 그 제조 방법
JP5216716B2 (ja) 2008-08-20 2013-06-19 株式会社半導体エネルギー研究所 発光装置及びその作製方法
TWI384434B (zh) * 2008-08-28 2013-02-01 Au Optronics Corp 可撓式顯示面板及其製造方法、光電裝置及其製造方法
WO2010032602A1 (en) 2008-09-18 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2010032611A1 (en) 2008-09-19 2010-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR101611643B1 (ko) 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US8975626B2 (en) 2008-11-18 2015-03-10 Panasonic Intellectual Property Management Co., Ltd. Flexible semiconductor device
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
US8877648B2 (en) * 2009-03-26 2014-11-04 Semprius, Inc. Methods of forming printable integrated circuit devices by selective etching to suspend the devices from a handling substrate and devices formed thereby
JP4653860B2 (ja) 2009-03-31 2011-03-16 パナソニック株式会社 フレキシブル半導体装置およびその製造方法
US20100253902A1 (en) 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
KR101677076B1 (ko) * 2009-06-05 2016-11-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전 변환 디바이스 및 그 제조 방법
CN102460722B (zh) * 2009-06-05 2015-04-01 株式会社半导体能源研究所 光电转换装置及其制造方法
WO2010140522A1 (en) * 2009-06-05 2010-12-09 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and manufacturing method thereof
WO2011046025A1 (en) * 2009-10-16 2011-04-21 Semiconductor Energy Laboratory Co., Ltd. Logic circuit and semiconductor device
KR20130036739A (ko) 2010-04-09 2013-04-12 가부시키가이샤 한도오따이 에네루기 켄큐쇼 산화물 반도체 메모리 장치
JPWO2011142089A1 (ja) 2010-05-14 2013-07-22 パナソニック株式会社 フレキシブル半導体装置およびその製造方法ならびに画像表示装置
JP5842180B2 (ja) 2011-03-24 2016-01-13 パナソニックＩｐマネジメント株式会社 フレキシブル半導体装置及びその製造方法
TWI433625B (zh) 2011-07-04 2014-04-01 Ind Tech Res Inst 軟性電子元件的製法
KR101875132B1 (ko) * 2011-10-28 2018-07-09 삼성디스플레이 주식회사 유기 전계 발광 표시 장치 및 이의 제조 방법
JP5380561B2 (ja) * 2012-02-09 2014-01-08 株式会社半導体エネルギー研究所 半導体装置
KR101793628B1 (ko) * 2012-04-08 2017-11-06 삼성전자주식회사 투명 디스플레이 장치 및 그 디스플레이 방법
US8878275B2 (en) * 2013-02-18 2014-11-04 Fairchild Semiconductor Corporation LDMOS device with double-sloped field plate
KR102309244B1 (ko) 2013-02-20 2021-10-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
TWI642094B (zh) 2013-08-06 2018-11-21 半導體能源研究所股份有限公司 剝離方法
TW201943069A (zh) 2013-09-06 2019-11-01 日商半導體能源研究所股份有限公司 發光裝置以及發光裝置的製造方法
JP5613814B2 (ja) * 2013-10-29 2014-10-29 株式会社半導体エネルギー研究所 携帯機器
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
WO2015083042A1 (ja) 2013-12-03 2015-06-11 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
WO2015087192A1 (en) 2013-12-12 2015-06-18 Semiconductor Energy Laboratory Co., Ltd. Peeling method and peeling apparatus
US9397149B2 (en) 2013-12-27 2016-07-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
DE112015000866T5 (de) 2014-02-19 2016-11-17 Semiconductor Energy Laboratory Co., Ltd. Lichtemittierende Vorrichtung und Ablöseverfahren
TWI764064B (zh) 2014-03-13 2022-05-11 日商半導體能源研究所股份有限公司 撓性裝置
CN103996800B (zh) * 2014-03-25 2016-08-17 吉林大学 一种从底发射到顶发射转换的柔性有机电致发光器件的制备方法
CN106465494B (zh) 2014-04-11 2019-01-22 株式会社半导体能源研究所 发光装置
JP2014212323A (ja) * 2014-05-23 2014-11-13 株式会社半導体エネルギー研究所 半導体装置
US9799829B2 (en) 2014-07-25 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Separation method, light-emitting device, module, and electronic device
WO2016017997A1 (en) 2014-07-31 2016-02-04 Samsung Electronics Co., Ltd. Wearable glasses and method of providing content using the same
JP6012694B2 (ja) * 2014-11-24 2016-10-25 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2018531411A (ja) * 2015-12-11 2018-10-25 シェンジェン ロイオル テクノロジーズ カンパニー リミテッドＳｈｅｎｚｈｅｎ Ｒｏｙｏｌｅ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏ．， Ｌｔｄ． フレキシブルディスプレイモジュールのボンディング方法
JP6329123B2 (ja) * 2015-12-18 2018-05-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
US10259207B2 (en) 2016-01-26 2019-04-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming separation starting point and separation method
KR20180121568A (ko) 2016-03-09 2018-11-07 코닝 인코포레이티드 복합적으로 굽은 유리 제품의 냉간 형성
US10680155B2 (en) * 2016-05-24 2020-06-09 The Chinese University Of Hong Kong Methods of fabrication of flexible micro-thermoelectric generators
WO2018005646A1 (en) 2016-06-28 2018-01-04 Corning Incorporated Laminating thin strengthened glass to curved molded plastic surface for decorative and display cover application
WO2018009504A1 (en) 2016-07-05 2018-01-11 Corning Incorporated Cold-formed glass article and assembly process thereof
JP6280969B2 (ja) * 2016-10-14 2018-02-14 株式会社半導体エネルギー研究所 半導体装置の作製方法
TWI745458B (zh) 2016-10-20 2021-11-11 美商康寧公司 冷成形的３ｄ物件之成形製程
CN115403280B (zh) 2016-10-25 2024-03-19 康宁公司 用于显示器的冷成形玻璃积层
EP3562712A1 (en) 2016-12-30 2019-11-06 Corning Incorporated Glass-covered vehicle interior system and method for forming the same
US11016590B2 (en) 2017-01-03 2021-05-25 Corning Incorporated Vehicle interior systems having a curved cover glass and display or touch panel and methods for forming the same
US10712850B2 (en) 2017-01-03 2020-07-14 Corning Incorporated Vehicle interior systems having a curved cover glass and a display or touch panel and methods for forming the same
KR20200017001A (ko) 2017-01-03 2020-02-17 코닝 인코포레이티드 만곡된 커버 유리 및 디스플레이 또는 터치 패널을 갖는 차량 인테리어 시스템 및 이를 형성시키는 방법
JP6378372B2 (ja) * 2017-01-17 2018-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6329292B2 (ja) * 2017-03-23 2018-05-23 株式会社半導体エネルギー研究所 半導体装置
JP6518916B2 (ja) * 2017-03-24 2019-05-29 株式会社Ｎｓｃ 保護ヘルメット
US11685684B2 (en) 2017-05-15 2023-06-27 Corning Incorporated Contoured glass articles and methods of making the same
CN111094050B (zh) 2017-07-18 2023-11-07 康宁公司 复杂弯曲玻璃制品的冷成型
WO2019055581A1 (en) 2017-09-12 2019-03-21 Corning Incorporated TOUCH-SENSITIVE GLASS ELEMENTS WITH INSULATED FACE AND METHODS OF MAKING SAME
TWI873668B (zh) 2017-09-13 2025-02-21 美商康寧公司 用於顯示器的基於光導器的無電面板、相關的方法及載具內部系統
US11065960B2 (en) 2017-09-13 2021-07-20 Corning Incorporated Curved vehicle displays
TWI844520B (zh) 2017-10-10 2024-06-11 美商康寧公司 具有改善可靠性的彎曲的覆蓋玻璃的車輛內部系統及其形成方法
CN111758063B (zh) 2017-11-21 2022-08-09 康宁公司 用于抬头显示器系统的非球面镜及其形成方法
TWI772569B (zh) 2017-11-30 2022-08-01 美商康寧公司 用於真空成形非球面鏡的系統與方法
US11550148B2 (en) 2017-11-30 2023-01-10 Corning Incorporated Vacuum mold apparatus, systems, and methods for forming curved mirrors
CN116299791A (zh) 2018-03-02 2023-06-23 康宁公司 抗反射涂层及制品与形成抗反射涂层及制品的方法
CN111989302B (zh) 2018-03-13 2023-03-28 康宁公司 具有抗破裂的弯曲覆盖玻璃的载具内部系统及用于形成这些载具内部系统的方法
JP2018142721A (ja) * 2018-04-27 2018-09-13 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2020014064A1 (en) 2018-07-12 2020-01-16 Corning Incorporated Deadfront configured for color matching
CN112566782A (zh) 2018-07-16 2021-03-26 康宁公司 具冷弯玻璃基板的车辆内部系统及其形成方法
WO2020023234A1 (en) 2018-07-23 2020-01-30 Corning Incorporated Automotive interiors and cover glass articles with improved headform impact performance and post-breakage visibility
WO2020023606A1 (en) 2018-07-26 2020-01-30 Corning Incorporated Cold-formed curved glass articles and methods of making the same
CN120245717A (zh) 2018-08-20 2025-07-04 康宁公司 用于显示器或触控面板的具有强化的盖玻璃
KR102703638B1 (ko) 2018-10-18 2024-09-05 코닝 인코포레이티드 자동차 내부 디스플레이 패널용 프레임
US10906837B2 (en) 2018-10-18 2021-02-02 Corning Incorporated Strengthened glass articles exhibiting improved headform impact performance and automotive interior systems incorporating the same
CN113165334B (zh) 2018-11-01 2023-12-22 康宁公司 用于3d冷成型弯曲层合物的均匀粘合剂粘结线控制的方法
WO2020101874A2 (en) 2018-11-16 2020-05-22 Corning Incorporated Glass ceramic devices and methods with tunable infrared transmittance
WO2020106471A1 (en) 2018-11-21 2020-05-28 Corning Incorporated Low stored tensile energy dicing glass and preferential crack fragmentation
EP3887326B1 (en) 2018-11-29 2024-05-22 Corning Incorporated Adhering glass cover sheet to a frame
CN113196373B (zh) 2018-11-29 2024-07-23 康宁公司 动态可调的显示系统和动态调整显示器的方法
KR20210097747A (ko) 2018-11-30 2021-08-09 코닝 인코포레이티드 열적으로 매칭된 시스템을 갖는 냉간-성형 유리 물품 및 이를 형성하기 위한 공정
EP3771695A1 (en) 2019-07-31 2021-02-03 Corning Incorporated Method and system for cold-forming glass
US12466756B2 (en) 2019-10-08 2025-11-11 Corning Incorporated Curved glass articles including a bumper piece configured to relocate bending moment from display region and method of manufacturing same
US11772361B2 (en) 2020-04-02 2023-10-03 Corning Incorporated Curved glass constructions and methods for forming same
JP2022049603A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 半導体装置の製造方法
CN112382666B (zh) * 2020-11-05 2022-09-02 中国科学院上海微系统与信息技术研究所 一种柔性器件及其制备方法
KR20240004897A (ko) 2021-05-07 2024-01-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
KR102825085B1 (ko) * 2021-07-29 2025-06-24 엘지디스플레이 주식회사 박막 트랜지스터, 그 제조방법 및 이를 포함하는 표시장치

Family Cites Families (82)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US575745A (en) * 1897-01-26 Machine for boring wheel-rims
US3877790A (en) 1972-09-18 1975-04-15 Astronics Corp Large liquid crystal displays and method of producing them
US4409268A (en) 1979-03-19 1983-10-11 Ricoh Company, Ltd. Liquid crystal display panels and process for their production
US4310577A (en) 1979-08-24 1982-01-12 Liquid Crystal Products, Inc. Liquid crystal film laminate
JPH0658966B2 (ja) 1982-05-17 1994-08-03 キヤノン株式会社 半導体素子
US4709991A (en) 1983-04-26 1987-12-01 Seiko Epson Kabushiki Kaisha Liquid crystal display with barrier layer to reduce permeability
JPS60238817A (ja) 1984-05-12 1985-11-27 Citizen Watch Co Ltd 液晶表示装置
US4727044A (en) 1984-05-18 1988-02-23 Semiconductor Energy Laboratory Co., Ltd. Method of making a thin film transistor with laser recrystallized source and drain
US5962869A (en) 1988-09-28 1999-10-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor material and method for forming the same and thin film transistor
EP0258305A1 (en) 1986-01-27 1988-03-09 Autodisplay A/S An arrangement in a display or instrument board
JPS63101829A (ja) * 1986-10-17 1988-05-06 Nec Corp アクテイブ・マトリツクス液晶表示装置およびその製造方法
JP2653099B2 (ja) 1988-05-17 1997-09-10 セイコーエプソン株式会社 アクティブマトリクスパネル，投写型表示装置及びビューファインダー
EP0360971A3 (en) 1988-08-31 1991-07-17 Mitsui Mining & Smelting Co., Ltd. Mounting substrate and its production method, and printed wiring board having connector function and its connection method
JPH02154232A (ja) * 1988-12-06 1990-06-13 Nec Corp 液晶表示基板とその製造方法
US4961630A (en) 1989-03-15 1990-10-09 Ovonic Imaging Systems, Inc. Liquid crystal display with auxiliary pixel capacitance interconnected through substrate
US5058997A (en) 1989-08-11 1991-10-22 International Business Machines Corporation Tft lcd with optical interference color filters
US4988976A (en) 1989-09-06 1991-01-29 Lu Hsing Tseng Head-up display with magnetic field speed detecting means
JPH03125443A (ja) 1989-10-09 1991-05-28 Sharp Corp 実装基板の電極及び該実装基板の電極を有する液晶表示装置
US5453864A (en) 1990-02-16 1995-09-26 Seiko Epson Corporation Liquid crystal element and electronic apparatus
JP2660601B2 (ja) 1990-06-27 1997-10-08 日本石油株式会社 液晶表示素子用補償板の製造法
US5147826A (en) * 1990-08-06 1992-09-15 The Pennsylvania Research Corporation Low temperature crystallization and pattering of amorphous silicon films
JPH0824193B2 (ja) 1990-10-16 1996-03-06 工業技術院長 平板型光弁駆動用半導体装置の製造方法
JP2929704B2 (ja) 1990-11-01 1999-08-03 松下電器産業株式会社 液晶表示用基板の製造方法
JP2866730B2 (ja) 1990-11-14 1999-03-08 日本電信電話株式会社 半導体回路の形成方法
US5618739A (en) * 1990-11-15 1997-04-08 Seiko Instruments Inc. Method of making light valve device using semiconductive composite substrate
JP2791422B2 (ja) 1990-12-25 1998-08-27 株式会社 半導体エネルギー研究所 電気光学装置およびその作製方法
US5849601A (en) 1990-12-25 1998-12-15 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7115902B1 (en) 1990-11-20 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US5514879A (en) 1990-11-20 1996-05-07 Semiconductor Energy Laboratory Co., Ltd. Gate insulated field effect transistors and method of manufacturing the same
KR950013784B1 (ko) 1990-11-20 1995-11-16 가부시키가이샤 한도오따이 에네루기 겐큐쇼 반도체 전계효과 트랜지스터 및 그 제조방법과 박막트랜지스터
KR950001360B1 (ko) * 1990-11-26 1995-02-17 가부시키가이샤 한도오따이 에네루기 겐큐쇼 전기 광학장치와 그 구동방법
US5206749A (en) 1990-12-31 1993-04-27 Kopin Corporation Liquid crystal display having essentially single crystal transistors pixels and driving circuits
JP3119709B2 (ja) 1990-12-20 2000-12-25 旭硝子株式会社 液晶表示装置及び投射型液晶表示装置
US7098479B1 (en) 1990-12-25 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and method for manufacturing the same
US7075501B1 (en) 1990-12-31 2006-07-11 Kopin Corporation Head mounted display system
US5376561A (en) * 1990-12-31 1994-12-27 Kopin Corporation High density electronic circuit modules
US5258325A (en) 1990-12-31 1993-11-02 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5475514A (en) 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US5256562A (en) 1990-12-31 1993-10-26 Kopin Corporation Method for manufacturing a semiconductor device using a circuit transfer film
US5261156A (en) 1991-02-28 1993-11-16 Semiconductor Energy Laboratory Co., Ltd. Method of electrically connecting an integrated circuit to an electric device
JPH0824104B2 (ja) 1991-03-18 1996-03-06 株式会社半導体エネルギー研究所 半導体材料およびその作製方法
US5110748A (en) 1991-03-28 1992-05-05 Honeywell Inc. Method for fabricating high mobility thin film transistors as integrated drivers for active matrix display
US5308779A (en) 1991-03-28 1994-05-03 Honeywell Inc. Method of making high mobility integrated drivers for active matrix displays
KR940000143B1 (ko) 1991-06-25 1994-01-07 재단법인 한국전자통신연구소 대형 박막 트랜지스터(TFT) 액정 디스플레이 패널(LCD panel)의 제조방법
EP0537677B1 (en) 1991-10-16 1998-08-19 Sony Corporation Method of forming an SOI structure with a DRAM
JPH06118441A (ja) 1991-11-05 1994-04-28 Tadanobu Kato 表示セル
US5317433A (en) 1991-12-02 1994-05-31 Canon Kabushiki Kaisha Image display device with a transistor on one side of insulating layer and liquid crystal on the other side
JPH07504764A (ja) 1992-03-13 1995-05-25 コピン・コーポレーシヨン 頭部取り付け表示系
JP2821830B2 (ja) 1992-05-14 1998-11-05 セイコーインスツルメンツ株式会社 半導体薄膜素子その応用装置および半導体薄膜素子の製造方法
JPH05323365A (ja) 1992-05-19 1993-12-07 Casio Comput Co Ltd アクティブマトリックス液晶表示装置
JP3526058B2 (ja) 1992-08-19 2004-05-10 セイコーインスツルメンツ株式会社 光弁用半導体装置
US5705424A (en) 1992-09-11 1998-01-06 Kopin Corporation Process of fabricating active matrix pixel electrodes
DE69322279T2 (de) 1992-09-11 1999-06-24 Kopin Corp., Taunton, Mass. Farbfiltersystem fuer anzeigetafeln
US5346850A (en) 1992-10-29 1994-09-13 Regents Of The University Of California Crystallization and doping of amorphous silicon on low temperature plastic
US5781164A (en) 1992-11-04 1998-07-14 Kopin Corporation Matrix display systems
JP3200481B2 (ja) 1992-11-18 2001-08-20 ナミックス株式会社 液晶表示パネル用シール材及びそれを用いた液晶表示パネル
US5403762A (en) 1993-06-30 1995-04-04 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a TFT
US6022458A (en) 1992-12-07 2000-02-08 Canon Kabushiki Kaisha Method of production of a semiconductor substrate
EP0612102B1 (en) 1993-02-15 2001-09-26 Semiconductor Energy Laboratory Co., Ltd. Process for the fabrication of a crystallised semiconductor layer
JPH06244103A (ja) 1993-02-15 1994-09-02 Semiconductor Energy Lab Co Ltd 半導体の製造方法
TW241377B (https=) 1993-03-12 1995-02-21 Semiconductor Energy Res Co Ltd
JP3431682B2 (ja) 1993-03-12 2003-07-28 株式会社半導体エネルギー研究所 半導体回路の作製方法
EP0645663B1 (en) 1993-04-09 1999-07-07 Citizen Watch Co., Ltd. Liquid crystal display
JP3184853B2 (ja) 1993-06-24 2001-07-09 株式会社日立製作所 液晶表示装置
TW369686B (en) * 1993-07-27 1999-09-11 Semiconductor Energy Lab Corp Semiconductor device and process for fabricating the same
US5436744A (en) 1993-09-03 1995-07-25 Motorola Inc. Flexible liquid crystal display with integrated driver circuit and display electrodes formed on opposite sides of folded substrate
JPH07142743A (ja) 1993-09-22 1995-06-02 Sharp Corp 薄膜トランジスタの製造方法
US5488012A (en) * 1993-10-18 1996-01-30 The Regents Of The University Of California Silicon on insulator with active buried regions
GB9401770D0 (en) 1994-01-31 1994-03-23 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin-film circuits
US5454302A (en) 1994-03-02 1995-10-03 Atlas Pacific Engineering Company Pear transfer apparatus and method
JP3246210B2 (ja) * 1994-08-11 2002-01-15 株式会社神戸製鋼所 高強度高靭性溶融めっき鋼線およびその製造方法
TW395008B (en) 1994-08-29 2000-06-21 Semiconductor Energy Lab Semiconductor circuit for electro-optical device and method of manufacturing the same
JP3442500B2 (ja) 1994-08-31 2003-09-02 株式会社半導体エネルギー研究所 半導体回路の作製方法
JP4083821B2 (ja) 1994-09-15 2008-04-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3512496B2 (ja) 1994-11-25 2004-03-29 株式会社半導体エネルギー研究所 Ｓｏｉ型半導体集積回路の作製方法
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3778456B2 (ja) 1995-02-21 2006-05-24 株式会社半導体エネルギー研究所 絶縁ゲイト型薄膜半導体装置の作製方法
US5757456A (en) 1995-03-10 1998-05-26 Semiconductor Energy Laboratory Co., Ltd. Display device and method of fabricating involving peeling circuits from one substrate and mounting on other
US5834327A (en) 1995-03-18 1998-11-10 Semiconductor Energy Laboratory Co., Ltd. Method for producing display device
JP3499327B2 (ja) 1995-03-27 2004-02-23 株式会社半導体エネルギー研究所 表示装置の作製方法
KR101319468B1 (ko) * 2005-12-02 2013-10-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체장치의 제조방법
JP2010197813A (ja) * 2009-02-26 2010-09-09 Hitachi Displays Ltd 画像表示装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102169850A (zh) * 2006-04-28 2011-08-31 株式会社半导体能源研究所 半导体集成电路及其制造方法、使用该电路的半导体装置
CN102169850B (zh) * 2006-04-28 2014-02-05 株式会社半导体能源研究所 半导体集成电路及其制造方法、使用该电路的半导体装置
EP2001047A1 (en) 2007-06-07 2008-12-10 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device

Also Published As

Publication number Publication date
KR100427906B1 (ko) 2004-04-30
KR100376801B1 (ko) 2003-03-19
US7425931B1 (en) 2008-09-16
JP2001053290A (ja) 2001-02-23
US20080309585A1 (en) 2008-12-18
US8497509B2 (en) 2013-07-30
JP2005051207A (ja) 2005-02-24
JP3934628B2 (ja) 2007-06-20
KR100302403B1 (ko) 2001-11-07
JP2001060697A (ja) 2001-03-06
KR100288111B1 (ko) 2001-06-01
US7375782B2 (en) 2008-05-20
US6998282B1 (en) 2006-02-14
US6376333B1 (en) 2002-04-23
JPH08288522A (ja) 1996-11-01
KR960032775A (ko) 1996-09-17
US5821138A (en) 1998-10-13
JP3369539B2 (ja) 2003-01-20
US20050162578A1 (en) 2005-07-28
KR100432589B1 (ko) 2004-05-28
JP2001044445A (ja) 2001-02-16
JP2004297084A (ja) 2004-10-21
JP3934629B2 (ja) 2007-06-20
JP3934310B2 (ja) 2007-06-20
JP3364197B2 (ja) 2003-01-08
US7361519B2 (en) 2008-04-22
US20050162421A1 (en) 2005-07-28

Similar Documents

Publication Publication Date Title
JP3364081B2 (ja) 半導体装置の作製方法
KR101891497B1 (ko) 액정 표시 장치 및 액정 표시 장치의 제작 방법
CN100442532C (zh) 有源矩阵显示器件
US7923311B2 (en) Electro-optical device and thin film transistor and method for forming the same
US20130306948A1 (en) Peeling method and method for manufacturing display device using the peeling method
JP2003174153A (ja) 剥離方法および半導体装置の作製方法、および半導体装置
JPH08321466A (ja) 半導体装置および半導体の作製方法および半導体装置の作製方法
JP2003195787A (ja) 発光装置の作製方法
CN1154488A (zh) 有非发光型显示器的电子装置
KR100297063B1 (ko) 표시장치및그표시장치를가지는전자장치
JP3161701B2 (ja) 液晶電気光学装置の作製方法
JPH10197854A (ja) 液晶表示装置

Legal Events

Date Code Title Description
R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081025

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081025

Year of fee payment: 6

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091025

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091025

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091025

Year of fee payment: 7

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101025

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101025

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111025

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111025

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121025

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121025

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131025

Year of fee payment: 11

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees