JP2005534181A5 - - Google Patents

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JP2005534181A5
JP2005534181A5 JP2004523521A JP2004523521A JP2005534181A5 JP 2005534181 A5 JP2005534181 A5 JP 2005534181A5 JP 2004523521 A JP2004523521 A JP 2004523521A JP 2004523521 A JP2004523521 A JP 2004523521A JP 2005534181 A5 JP2005534181 A5 JP 2005534181A5
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JP2004523521A 2002-07-19 2003-07-18 超高品質シリコン含有化合物層の形成方法 Expired - Lifetime JP5005170B2 (ja)

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US39757602P 2002-07-19 2002-07-19
US60/397,576 2002-07-19
PCT/US2003/022393 WO2004009861A2 (en) 2002-07-19 2003-07-18 Method to form ultra high quality silicon-containing compound layers

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JP2005534181A JP2005534181A (ja) 2005-11-10
JP2005534181A5 true JP2005534181A5 (ja) 2006-07-27
JP5005170B2 JP5005170B2 (ja) 2012-08-22

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WO (1) WO2004009861A2 (ja)

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