FR2886457B1 - Procede de fabrication d'une structure a couche d'oxyde d'epaisseur desiree,notammentt sur substrat de ge ou sige - Google Patents
Procede de fabrication d'une structure a couche d'oxyde d'epaisseur desiree,notammentt sur substrat de ge ou sigeInfo
- Publication number
- FR2886457B1 FR2886457B1 FR0505358A FR0505358A FR2886457B1 FR 2886457 B1 FR2886457 B1 FR 2886457B1 FR 0505358 A FR0505358 A FR 0505358A FR 0505358 A FR0505358 A FR 0505358A FR 2886457 B1 FR2886457 B1 FR 2886457B1
- Authority
- FR
- France
- Prior art keywords
- sig
- substrate
- oxide layer
- layer structure
- thickened oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0505358A FR2886457B1 (fr) | 2005-05-27 | 2005-05-27 | Procede de fabrication d'une structure a couche d'oxyde d'epaisseur desiree,notammentt sur substrat de ge ou sige |
US11/207,069 US20060270244A1 (en) | 2005-05-27 | 2005-08-17 | Method of fabricating a structure with an oxide layer of a desired thickness on a Ge or SiGe substrate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0505358A FR2886457B1 (fr) | 2005-05-27 | 2005-05-27 | Procede de fabrication d'une structure a couche d'oxyde d'epaisseur desiree,notammentt sur substrat de ge ou sige |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2886457A1 FR2886457A1 (fr) | 2006-12-01 |
FR2886457B1 true FR2886457B1 (fr) | 2007-12-07 |
Family
ID=35601792
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0505358A Expired - Fee Related FR2886457B1 (fr) | 2005-05-27 | 2005-05-27 | Procede de fabrication d'une structure a couche d'oxyde d'epaisseur desiree,notammentt sur substrat de ge ou sige |
Country Status (2)
Country | Link |
---|---|
US (1) | US20060270244A1 (fr) |
FR (1) | FR2886457B1 (fr) |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4462847A (en) * | 1982-06-21 | 1984-07-31 | Texas Instruments Incorporated | Fabrication of dielectrically isolated microelectronic semiconductor circuits utilizing selective growth by low pressure vapor deposition |
US4604304A (en) * | 1985-07-03 | 1986-08-05 | Rca Corporation | Process of producing thick layers of silicon dioxide |
US4722912A (en) * | 1986-04-28 | 1988-02-02 | Rca Corporation | Method of forming a semiconductor structure |
JPH06318588A (ja) * | 1993-03-11 | 1994-11-15 | Nec Corp | 半導体装置の製造方法 |
JPH10189527A (ja) * | 1996-12-20 | 1998-07-21 | Fujitsu Ltd | 半導体装置の製造方法及び半導体装置の製造装置 |
US6635110B1 (en) * | 1999-06-25 | 2003-10-21 | Massachusetts Institute Of Technology | Cyclic thermal anneal for dislocation reduction |
JP5005170B2 (ja) * | 2002-07-19 | 2012-08-22 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
DE10234165B4 (de) * | 2002-07-26 | 2008-01-03 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zum Füllen eines Grabens, der in einem Substrat gebildet ist, mit einem isolierenden Material |
US6765259B2 (en) * | 2002-08-28 | 2004-07-20 | Tower Semiconductor Ltd. | Non-volatile memory transistor array implementing “H” shaped source/drain regions and method for fabricating same |
US7008878B2 (en) * | 2003-12-17 | 2006-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Plasma treatment and etching process for ultra-thin dielectric films |
US7166522B2 (en) * | 2004-01-23 | 2007-01-23 | Chartered Semiconductor Manufacturing Ltd. | Method of forming a relaxed semiconductor buffer layer on a substrate with a large lattice mismatch |
-
2005
- 2005-05-27 FR FR0505358A patent/FR2886457B1/fr not_active Expired - Fee Related
- 2005-08-17 US US11/207,069 patent/US20060270244A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
FR2886457A1 (fr) | 2006-12-01 |
US20060270244A1 (en) | 2006-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR2910702B1 (fr) | Procede de fabrication d'un substrat mixte | |
FR2851372B1 (fr) | Procede de fabrication d'un substrat a couche isolante enterree | |
FR2897982B1 (fr) | Procede de fabrication des structures de type partiellement soi, comportant des zones reliant une couche superficielle et un substrat | |
FR2933534B1 (fr) | Procede de fabrication d'une structure comprenant une couche de germanium sur un substrat | |
FR2855909B1 (fr) | Procede d'obtention concomitante d'au moins une paire de structures comprenant au moins une couche utile reportee sur un substrat | |
FR2838865B1 (fr) | Procede de fabrication d'un substrat avec couche utile sur support de resistivite elevee | |
FR2872342B1 (fr) | Procede de fabrication d'un dispositif semiconducteur | |
FR2892196B1 (fr) | Procede de fabrication d'un biocapteur a detection integree | |
FR2855908B1 (fr) | Procede d'obtention d'une structure comprenant au moins un substrat et une couche ultramince | |
WO2006094313A3 (fr) | Methode de formation de tranches laminees polymeres comprenant differents materiaux de film | |
FR2912259B1 (fr) | Procede de fabrication d'un substrat du type "silicium sur isolant". | |
HK1101220A1 (en) | Method for manufacturing nitride semiconductor substrate | |
EP2009135A4 (fr) | Substrat de base pour une pellicule de diamant épitaxique, procédé de fabrication du substrat de base pour pellicule de diamant épitaxique, pellicule de diamant épitaxique fabriquée par le substrat de base pour pellicule de diamant épitaxique et procédé de fabri | |
WO2008063337A3 (fr) | Dispositifs à semi-conducteur sur diamant et procédés associés | |
FR2918793B1 (fr) | Procede de fabrication d'un substrat semiconducteur-sur- isolant pour la microelectronique et l'optoelectronique. | |
SG124387A1 (en) | Method for manufacturing a doughnut-shaped glass substrate | |
DE602005016201D1 (de) | Substrat mit einer Verformungsverhinderungsschicht | |
FR2898215B1 (fr) | Procede de fabrication d'un substrat par condensation germanium | |
DE60220736D1 (de) | Herstellungsverfahren für gebondetes Substrat | |
FR2912258B1 (fr) | "procede de fabrication d'un substrat du type silicium sur isolant" | |
GB0809200D0 (en) | Method for making a glass type substrate surface, subtrate and marking device threfor | |
FR2865420B1 (fr) | Procede de nettoyage d'un substrat | |
FR2892229B1 (fr) | Procede de fabrication d'une couche d'accroche metallique | |
FR2891761B1 (fr) | Procede de fabrication d'un materiau en feuille comportant au moins une fenetre. | |
FR2892426B1 (fr) | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20110131 |