FR2892426B1 - Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication - Google Patents
Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabricationInfo
- Publication number
- FR2892426B1 FR2892426B1 FR0510940A FR0510940A FR2892426B1 FR 2892426 B1 FR2892426 B1 FR 2892426B1 FR 0510940 A FR0510940 A FR 0510940A FR 0510940 A FR0510940 A FR 0510940A FR 2892426 B1 FR2892426 B1 FR 2892426B1
- Authority
- FR
- France
- Prior art keywords
- manufacturing
- crystalline materials
- silicon tape
- same
- manufacturing same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000002178 crystalline material Substances 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0510940A FR2892426B1 (fr) | 2005-10-26 | 2005-10-26 | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
EP06820238A EP1941553A1 (fr) | 2005-10-26 | 2006-10-19 | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
PCT/FR2006/002349 WO2007048904A1 (fr) | 2005-10-26 | 2006-10-19 | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
JP2008537131A JP2009513469A (ja) | 2005-10-26 | 2006-10-19 | シリコンまたは他の結晶性物質のリボンを製造する装置および方法 |
CNA2006800404668A CN101300686A (zh) | 2005-10-26 | 2006-10-19 | 用于制造硅或其他晶体材料的带的装置及制造方法 |
US11/992,754 US20090139445A1 (en) | 2005-10-26 | 2006-10-19 | Device for Fabricating a Ribbon of Silicon or Other Crystalline Materials and Method of Fabrication |
CA002626063A CA2626063A1 (fr) | 2005-10-26 | 2006-10-19 | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0510940A FR2892426B1 (fr) | 2005-10-26 | 2005-10-26 | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2892426A1 FR2892426A1 (fr) | 2007-04-27 |
FR2892426B1 true FR2892426B1 (fr) | 2008-01-11 |
Family
ID=36685772
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR0510940A Expired - Fee Related FR2892426B1 (fr) | 2005-10-26 | 2005-10-26 | Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication |
Country Status (7)
Country | Link |
---|---|
US (1) | US20090139445A1 (fr) |
EP (1) | EP1941553A1 (fr) |
JP (1) | JP2009513469A (fr) |
CN (1) | CN101300686A (fr) |
CA (1) | CA2626063A1 (fr) |
FR (1) | FR2892426B1 (fr) |
WO (1) | WO2007048904A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2913434B1 (fr) * | 2007-03-08 | 2009-11-20 | Apollon Solar | Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins. |
DE102009015236B4 (de) * | 2009-04-01 | 2015-03-05 | H.C. Starck Gmbh | Tiegel und seine Verwendung |
US20110168081A1 (en) * | 2010-01-12 | 2011-07-14 | Tao Li | Apparatus and Method for Continuous Casting of Monocrystalline Silicon Ribbon |
NL2004209C2 (en) * | 2010-02-08 | 2011-08-09 | Rgs Dev B V | Apparatus and method for the production of semiconductor material foils. |
KR101281033B1 (ko) * | 2011-05-19 | 2013-07-09 | 한국에너지기술연구원 | 온도 조절이 용이한 연속주조법을 이용한 태양전지용 실리콘 기판 제조 장치 및 이를 이용한 실리콘 기판 제조 방법 |
US20120329203A1 (en) * | 2011-06-22 | 2012-12-27 | Liang-Tung Chang | Method for Forming Silicon Thin Film |
KR101483693B1 (ko) * | 2012-04-05 | 2015-01-19 | 한국에너지기술연구원 | 실리콘 기판 제조 장치 |
KR101406705B1 (ko) | 2012-04-05 | 2014-06-12 | 한국에너지기술연구원 | 실리콘 기판 제조 장치 |
FR3081856B1 (fr) * | 2018-06-05 | 2020-11-27 | Inst Polytechnique Grenoble | Dispositif de production de silicium fondu |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1487587A (en) * | 1974-12-04 | 1977-10-05 | Metals Res Ltd | Crystal growth |
US4225378A (en) * | 1978-12-27 | 1980-09-30 | Burroughs Corporation | Extrusion mold and method for growing monocrystalline structures |
US4251570A (en) * | 1979-11-19 | 1981-02-17 | Honeywell Inc. | Cold substrate growth technique for silicon-on-ceramic |
US4590043A (en) * | 1982-12-27 | 1986-05-20 | Sri International | Apparatus for obtaining silicon from fluosilicic acid |
DE4236827A1 (de) * | 1992-10-30 | 1994-05-05 | Wacker Chemitronic | Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur |
JP3992469B2 (ja) * | 2001-09-21 | 2007-10-17 | 独立行政法人科学技術振興機構 | 酸化物系共晶体のバルクの製造装置と製造方法 |
FR2853913B1 (fr) * | 2003-04-17 | 2006-09-29 | Apollon Solar | Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication |
-
2005
- 2005-10-26 FR FR0510940A patent/FR2892426B1/fr not_active Expired - Fee Related
-
2006
- 2006-10-19 JP JP2008537131A patent/JP2009513469A/ja active Pending
- 2006-10-19 CN CNA2006800404668A patent/CN101300686A/zh active Pending
- 2006-10-19 WO PCT/FR2006/002349 patent/WO2007048904A1/fr active Application Filing
- 2006-10-19 CA CA002626063A patent/CA2626063A1/fr not_active Abandoned
- 2006-10-19 US US11/992,754 patent/US20090139445A1/en not_active Abandoned
- 2006-10-19 EP EP06820238A patent/EP1941553A1/fr not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
WO2007048904A1 (fr) | 2007-05-03 |
CA2626063A1 (fr) | 2007-05-03 |
CN101300686A (zh) | 2008-11-05 |
JP2009513469A (ja) | 2009-04-02 |
FR2892426A1 (fr) | 2007-04-27 |
EP1941553A1 (fr) | 2008-07-09 |
US20090139445A1 (en) | 2009-06-04 |
WO2007048904A8 (fr) | 2008-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20110630 |