WO2007048904A8 - Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication - Google Patents

Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication

Info

Publication number
WO2007048904A8
WO2007048904A8 PCT/FR2006/002349 FR2006002349W WO2007048904A8 WO 2007048904 A8 WO2007048904 A8 WO 2007048904A8 FR 2006002349 W FR2006002349 W FR 2006002349W WO 2007048904 A8 WO2007048904 A8 WO 2007048904A8
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
making
crystalline materials
lateral slot
crucible
Prior art date
Application number
PCT/FR2006/002349
Other languages
English (en)
Other versions
WO2007048904A1 (fr
Inventor
Roland Einhaus
Francois Lissalde
Hubert Lauvray
Original Assignee
Apollon Solar
Cyberstar
Roland Einhaus
Francois Lissalde
Hubert Lauvray
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apollon Solar, Cyberstar, Roland Einhaus, Francois Lissalde, Hubert Lauvray filed Critical Apollon Solar
Priority to US11/992,754 priority Critical patent/US20090139445A1/en
Priority to JP2008537131A priority patent/JP2009513469A/ja
Priority to EP06820238A priority patent/EP1941553A1/fr
Priority to CA002626063A priority patent/CA2626063A1/fr
Publication of WO2007048904A1 publication Critical patent/WO2007048904A1/fr
Publication of WO2007048904A8 publication Critical patent/WO2007048904A8/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Le dispositif comporte un creuset (1) ayant un fond (2) et des parois (3) latérales. Le creuset (1) comporte au moins une fente (4) latérale disposée horizontalement à une partie inférieure des parois (3) latérales. La fente (4) latérale présente une largeur supérieure à 50mm et, de préférence, comprise entre 100mm et 500mm. La hauteur (H) de la fente (4) est comprise entre 50 et 1000 micromètres. Le matériau cristallin sort du creuset par la fente (4) latérale de manière à former un ruban (R) cristallin. Le procédé comporte une étape de mise en contact d'un germe de cristallisation avec le matériau sortant par la fente (4) latérale et une étape de déplacement horizontal du ruban (R).
PCT/FR2006/002349 2005-10-26 2006-10-19 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication WO2007048904A1 (fr)

Priority Applications (4)

Application Number Priority Date Filing Date Title
US11/992,754 US20090139445A1 (en) 2005-10-26 2006-10-19 Device for Fabricating a Ribbon of Silicon or Other Crystalline Materials and Method of Fabrication
JP2008537131A JP2009513469A (ja) 2005-10-26 2006-10-19 シリコンまたは他の結晶性物質のリボンを製造する装置および方法
EP06820238A EP1941553A1 (fr) 2005-10-26 2006-10-19 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
CA002626063A CA2626063A1 (fr) 2005-10-26 2006-10-19 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0510940A FR2892426B1 (fr) 2005-10-26 2005-10-26 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication
FR0510940 2005-10-26

Publications (2)

Publication Number Publication Date
WO2007048904A1 WO2007048904A1 (fr) 2007-05-03
WO2007048904A8 true WO2007048904A8 (fr) 2008-06-19

Family

ID=36685772

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2006/002349 WO2007048904A1 (fr) 2005-10-26 2006-10-19 Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication

Country Status (7)

Country Link
US (1) US20090139445A1 (fr)
EP (1) EP1941553A1 (fr)
JP (1) JP2009513469A (fr)
CN (1) CN101300686A (fr)
CA (1) CA2626063A1 (fr)
FR (1) FR2892426B1 (fr)
WO (1) WO2007048904A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2913434B1 (fr) * 2007-03-08 2009-11-20 Apollon Solar Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.
DE102009015236B4 (de) * 2009-04-01 2015-03-05 H.C. Starck Gmbh Tiegel und seine Verwendung
US20110168081A1 (en) * 2010-01-12 2011-07-14 Tao Li Apparatus and Method for Continuous Casting of Monocrystalline Silicon Ribbon
NL2004209C2 (en) * 2010-02-08 2011-08-09 Rgs Dev B V Apparatus and method for the production of semiconductor material foils.
KR101281033B1 (ko) * 2011-05-19 2013-07-09 한국에너지기술연구원 온도 조절이 용이한 연속주조법을 이용한 태양전지용 실리콘 기판 제조 장치 및 이를 이용한 실리콘 기판 제조 방법
US20120329203A1 (en) * 2011-06-22 2012-12-27 Liang-Tung Chang Method for Forming Silicon Thin Film
KR101406705B1 (ko) 2012-04-05 2014-06-12 한국에너지기술연구원 실리콘 기판 제조 장치
KR101483693B1 (ko) * 2012-04-05 2015-01-19 한국에너지기술연구원 실리콘 기판 제조 장치
FR3081856B1 (fr) * 2018-06-05 2020-11-27 Inst Polytechnique Grenoble Dispositif de production de silicium fondu

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1487587A (en) * 1974-12-04 1977-10-05 Metals Res Ltd Crystal growth
US4225378A (en) * 1978-12-27 1980-09-30 Burroughs Corporation Extrusion mold and method for growing monocrystalline structures
US4251570A (en) * 1979-11-19 1981-02-17 Honeywell Inc. Cold substrate growth technique for silicon-on-ceramic
US4590043A (en) * 1982-12-27 1986-05-20 Sri International Apparatus for obtaining silicon from fluosilicic acid
DE4236827A1 (de) * 1992-10-30 1994-05-05 Wacker Chemitronic Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur
JP3992469B2 (ja) * 2001-09-21 2007-10-17 独立行政法人科学技術振興機構 酸化物系共晶体のバルクの製造装置と製造方法
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication

Also Published As

Publication number Publication date
CN101300686A (zh) 2008-11-05
US20090139445A1 (en) 2009-06-04
CA2626063A1 (fr) 2007-05-03
JP2009513469A (ja) 2009-04-02
WO2007048904A1 (fr) 2007-05-03
EP1941553A1 (fr) 2008-07-09
FR2892426A1 (fr) 2007-04-27
FR2892426B1 (fr) 2008-01-11

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