FR2913434B1 - Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins. - Google Patents

Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.

Info

Publication number
FR2913434B1
FR2913434B1 FR0701701A FR0701701A FR2913434B1 FR 2913434 B1 FR2913434 B1 FR 2913434B1 FR 0701701 A FR0701701 A FR 0701701A FR 0701701 A FR0701701 A FR 0701701A FR 2913434 B1 FR2913434 B1 FR 2913434B1
Authority
FR
France
Prior art keywords
silicon
crystalline materials
manufacturing self
supported plates
plates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0701701A
Other languages
English (en)
Other versions
FR2913434A1 (fr
Inventor
Roland Einhaus
Francois Lissalde
Yves Delannoy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centre National de la Recherche Scientifique CNRS
Apollon Solar SAS
Cyberstar
Original Assignee
Centre National de la Recherche Scientifique CNRS
Apollon Solar SAS
Cyberstar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre National de la Recherche Scientifique CNRS, Apollon Solar SAS, Cyberstar filed Critical Centre National de la Recherche Scientifique CNRS
Priority to FR0701701A priority Critical patent/FR2913434B1/fr
Priority to EP08775638A priority patent/EP2132366A2/fr
Priority to PCT/FR2008/000304 priority patent/WO2008132323A2/fr
Priority to US12/449,802 priority patent/US20100089310A1/en
Priority to JP2009552248A priority patent/JP2010523446A/ja
Publication of FR2913434A1 publication Critical patent/FR2913434A1/fr
Application granted granted Critical
Publication of FR2913434B1 publication Critical patent/FR2913434B1/fr
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Crucibles And Fluidized-Bed Furnaces (AREA)
  • Waste-Gas Treatment And Other Accessory Devices For Furnaces (AREA)
FR0701701A 2007-03-08 2007-03-08 Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins. Expired - Fee Related FR2913434B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR0701701A FR2913434B1 (fr) 2007-03-08 2007-03-08 Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.
EP08775638A EP2132366A2 (fr) 2007-03-08 2008-03-07 Dispositif et procédé de fabrication de plaques autosupportées de silicium ou autres matériaux cristallins
PCT/FR2008/000304 WO2008132323A2 (fr) 2007-03-08 2008-03-07 Dispositif et procédé de fabrication de plaques autosupportées de silicium ou autres matériaux cristallins
US12/449,802 US20100089310A1 (en) 2007-03-08 2008-03-07 Device and method for producing self-sustained plates of silicon or other crystalline materials
JP2009552248A JP2010523446A (ja) 2007-03-08 2008-03-07 シリコンまたはその他の結晶性材料の自立プレートを製造する装置および方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0701701A FR2913434B1 (fr) 2007-03-08 2007-03-08 Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.

Publications (2)

Publication Number Publication Date
FR2913434A1 FR2913434A1 (fr) 2008-09-12
FR2913434B1 true FR2913434B1 (fr) 2009-11-20

Family

ID=38626626

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0701701A Expired - Fee Related FR2913434B1 (fr) 2007-03-08 2007-03-08 Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.

Country Status (5)

Country Link
US (1) US20100089310A1 (fr)
EP (1) EP2132366A2 (fr)
JP (1) JP2010523446A (fr)
FR (1) FR2913434B1 (fr)
WO (1) WO2008132323A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2928641B1 (fr) * 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
NL2004209C2 (en) * 2010-02-08 2011-08-09 Rgs Dev B V Apparatus and method for the production of semiconductor material foils.
KR101281033B1 (ko) * 2011-05-19 2013-07-09 한국에너지기술연구원 온도 조절이 용이한 연속주조법을 이용한 태양전지용 실리콘 기판 제조 장치 및 이를 이용한 실리콘 기판 제조 방법
KR101483693B1 (ko) * 2012-04-05 2015-01-19 한국에너지기술연구원 실리콘 기판 제조 장치

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
CA1169336A (fr) * 1980-01-07 1984-06-19 Emanuel M. Sachs Methode et dispositif de filature en ruban sur fils-guides
US4572279A (en) * 1984-02-27 1986-02-25 Olin Corporation Electromagnetic shaping of thin ribbon conductor strip cast onto a chill wheel
JPH0620601B2 (ja) * 1985-06-26 1994-03-23 住友電気工業株式会社 連続鋳造方法
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
FR2892426B1 (fr) * 2005-10-26 2008-01-11 Apollon Solar Soc Par Actions Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication

Also Published As

Publication number Publication date
US20100089310A1 (en) 2010-04-15
EP2132366A2 (fr) 2009-12-16
FR2913434A1 (fr) 2008-09-12
WO2008132323A3 (fr) 2010-10-21
JP2010523446A (ja) 2010-07-15
WO2008132323A2 (fr) 2008-11-06

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Legal Events

Date Code Title Description
TQ Partial transmission of property
ST Notification of lapse

Effective date: 20111130