WO2008132323A3 - Dispositif et procédé de fabrication de plaques autosupportées de silicium ou autres matériaux cristallins - Google Patents

Dispositif et procédé de fabrication de plaques autosupportées de silicium ou autres matériaux cristallins Download PDF

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Publication number
WO2008132323A3
WO2008132323A3 PCT/FR2008/000304 FR2008000304W WO2008132323A3 WO 2008132323 A3 WO2008132323 A3 WO 2008132323A3 FR 2008000304 W FR2008000304 W FR 2008000304W WO 2008132323 A3 WO2008132323 A3 WO 2008132323A3
Authority
WO
WIPO (PCT)
Prior art keywords
liquid
sustained
silicon
plates
slot
Prior art date
Application number
PCT/FR2008/000304
Other languages
English (en)
Other versions
WO2008132323A2 (fr
Inventor
Roland Einhaus
François Lissalde
Yves Delannoy
Original Assignee
Apollon Solar
Cyberstar
Centre National De La Recherche Scientifique
Institut Polytechnique De Grenoble
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Apollon Solar, Cyberstar, Centre National De La Recherche Scientifique, Institut Polytechnique De Grenoble filed Critical Apollon Solar
Priority to JP2009552248A priority Critical patent/JP2010523446A/ja
Priority to US12/449,802 priority patent/US20100089310A1/en
Priority to EP08775638A priority patent/EP2132366A2/fr
Publication of WO2008132323A2 publication Critical patent/WO2008132323A2/fr
Publication of WO2008132323A3 publication Critical patent/WO2008132323A3/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/001—Continuous growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/06—Non-vertical pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

Abstract

Le dispositif de fabrication d'une plaque (8) de matériau cristallin par cristallisation dirigée d'un matériau en phase liquide (5) comporte un creuset (1) muni d'un fond (2), de parois latérales (3) et d'au moins une fente de sortie (4) horizontale disposée sur une partie inférieure d'une paroi latérale (3). Le creuset (1) présente, sur sa surface extérieure, à proximité immédiate de la fente (4), des moyens électromagnétiques (6) de création, au moins au niveau de la fente (4), de forces de répulsion magnétiques sur le matériau en phase liquide (5). Les moyens électromagnétiques (6), sont parcourus par un courant alternatif dont la fréquence est comprise entre 10kHz et 300kHz. Pour favoriser le brassage du matériau en phase liquide (5), une basse fréquence peut être superposée à la précédente.
PCT/FR2008/000304 2007-03-08 2008-03-07 Dispositif et procédé de fabrication de plaques autosupportées de silicium ou autres matériaux cristallins WO2008132323A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009552248A JP2010523446A (ja) 2007-03-08 2008-03-07 シリコンまたはその他の結晶性材料の自立プレートを製造する装置および方法
US12/449,802 US20100089310A1 (en) 2007-03-08 2008-03-07 Device and method for producing self-sustained plates of silicon or other crystalline materials
EP08775638A EP2132366A2 (fr) 2007-03-08 2008-03-07 Dispositif et procédé de fabrication de plaques autosupportées de silicium ou autres matériaux cristallins

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0701701 2007-03-08
FR0701701A FR2913434B1 (fr) 2007-03-08 2007-03-08 Dispositif et procede de fabrication de plaques autosupportees de silicium ou autres materiaux cristallins.

Publications (2)

Publication Number Publication Date
WO2008132323A2 WO2008132323A2 (fr) 2008-11-06
WO2008132323A3 true WO2008132323A3 (fr) 2010-10-21

Family

ID=38626626

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2008/000304 WO2008132323A2 (fr) 2007-03-08 2008-03-07 Dispositif et procédé de fabrication de plaques autosupportées de silicium ou autres matériaux cristallins

Country Status (5)

Country Link
US (1) US20100089310A1 (fr)
EP (1) EP2132366A2 (fr)
JP (1) JP2010523446A (fr)
FR (1) FR2913434B1 (fr)
WO (1) WO2008132323A2 (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2928641B1 (fr) * 2008-03-14 2010-03-26 Centre Nat Rech Scient Procede de purification de silicium pour applications photovoltaiques
NL2004209C2 (en) * 2010-02-08 2011-08-09 Rgs Dev B V Apparatus and method for the production of semiconductor material foils.
KR101281033B1 (ko) * 2011-05-19 2013-07-09 한국에너지기술연구원 온도 조절이 용이한 연속주조법을 이용한 태양전지용 실리콘 기판 제조 장치 및 이를 이용한 실리콘 기판 제조 방법
KR101483693B1 (ko) * 2012-04-05 2015-01-19 한국에너지기술연구원 실리콘 기판 제조 장치

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135595A (en) * 1980-01-07 1984-09-05 Emanuel Michael Sachs String stabilised crystal growth
US4572279A (en) * 1984-02-27 1986-02-25 Olin Corporation Electromagnetic shaping of thin ribbon conductor strip cast onto a chill wheel
JPS61296940A (ja) * 1985-06-26 1986-12-27 Sumitomo Electric Ind Ltd 連続鋳造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4661200A (en) * 1980-01-07 1987-04-28 Sachs Emanuel M String stabilized ribbon growth
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
FR2892426B1 (fr) * 2005-10-26 2008-01-11 Apollon Solar Soc Par Actions Dispositif de fabrication d'un ruban de silicium ou autres materiaux cristallins et procede de fabrication

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2135595A (en) * 1980-01-07 1984-09-05 Emanuel Michael Sachs String stabilised crystal growth
US4572279A (en) * 1984-02-27 1986-02-25 Olin Corporation Electromagnetic shaping of thin ribbon conductor strip cast onto a chill wheel
JPS61296940A (ja) * 1985-06-26 1986-12-27 Sumitomo Electric Ind Ltd 連続鋳造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
DURAND F: "Electromagnetic continuous pulling process compared to current casting processes with respect to solidification characteristics", SOLAR ENERGY MATERIALS AND SOLAR CELLS, ELSEVIER SCIENCE PUBLISHERS, AMSTERDAM, NL, vol. 72, no. 1-4, April 2002 (2002-04-01), pages 125 - 132, XP004339757, ISSN: 0927-0248 *

Also Published As

Publication number Publication date
EP2132366A2 (fr) 2009-12-16
US20100089310A1 (en) 2010-04-15
WO2008132323A2 (fr) 2008-11-06
FR2913434A1 (fr) 2008-09-12
JP2010523446A (ja) 2010-07-15
FR2913434B1 (fr) 2009-11-20

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