FR2849696B1 - Dispositif de fabrication de specimen et procede de fabrication de specimen - Google Patents

Dispositif de fabrication de specimen et procede de fabrication de specimen

Info

Publication number
FR2849696B1
FR2849696B1 FR0308791A FR0308791A FR2849696B1 FR 2849696 B1 FR2849696 B1 FR 2849696B1 FR 0308791 A FR0308791 A FR 0308791A FR 0308791 A FR0308791 A FR 0308791A FR 2849696 B1 FR2849696 B1 FR 2849696B1
Authority
FR
France
Prior art keywords
specimen manufacturing
specimen
manufacturing device
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0308791A
Other languages
English (en)
Other versions
FR2849696A1 (fr
Inventor
Satoshi Tomimatsu
Muneyuki Fukuda
Hiroyasu Shichi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Hitachi High Technologies Corp
Hitachi High Tech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi High Technologies Corp, Hitachi High Tech Corp filed Critical Hitachi High Technologies Corp
Publication of FR2849696A1 publication Critical patent/FR2849696A1/fr
Application granted granted Critical
Publication of FR2849696B1 publication Critical patent/FR2849696B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching
    • H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating, or etching for evaporating or etching for microworking, e. g. etching of gratings or trimming of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N1/00—Sampling; Preparing specimens for investigation
    • G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
    • G01N1/286—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q involving mechanical work, e.g. chopping, disintegrating, compacting, homogenising
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31749—Focused ion beam

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Sampling And Sample Adjustment (AREA)
FR0308791A 2003-01-08 2003-07-18 Dispositif de fabrication de specimen et procede de fabrication de specimen Expired - Fee Related FR2849696B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003001665A JP4088533B2 (ja) 2003-01-08 2003-01-08 試料作製装置および試料作製方法

Publications (2)

Publication Number Publication Date
FR2849696A1 FR2849696A1 (fr) 2004-07-09
FR2849696B1 true FR2849696B1 (fr) 2007-07-13

Family

ID=32588474

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0308791A Expired - Fee Related FR2849696B1 (fr) 2003-01-08 2003-07-18 Dispositif de fabrication de specimen et procede de fabrication de specimen

Country Status (3)

Country Link
US (1) US6858851B2 (fr)
JP (1) JP4088533B2 (fr)
FR (1) FR2849696B1 (fr)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6828566B2 (en) * 1997-07-22 2004-12-07 Hitachi Ltd Method and apparatus for specimen fabrication
JP4178741B2 (ja) * 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
JP4302933B2 (ja) * 2002-04-22 2009-07-29 株式会社日立ハイテクノロジーズ イオンビームによる穴埋め方法及びイオンビーム装置
JP2004227842A (ja) * 2003-01-21 2004-08-12 Canon Inc プローブ保持装置、試料の取得装置、試料加工装置、試料加工方法、および試料評価方法
EP1515360B1 (fr) * 2003-06-13 2011-01-19 Fei Company Procédé et dispositif pour la manipulation d'échantillons microscopiques
DE602004021750D1 (de) 2003-07-14 2009-08-13 Fei Co Zweistrahlsystem
DE10362116B4 (de) * 2003-09-17 2008-08-28 Carl Zeiss Nts Gmbh Verfahren zur Präparation einer Probe für elektronenmikroskopische Untersuchungen, sowie dabei verwendeter Greifer
JP4199629B2 (ja) * 2003-09-18 2008-12-17 株式会社日立ハイテクノロジーズ 内部構造観察方法とその装置
US7297965B2 (en) * 2004-07-14 2007-11-20 Applied Materials, Israel, Ltd. Method and apparatus for sample formation and microanalysis in a vacuum chamber
EP1782435A4 (fr) * 2004-07-28 2010-06-16 Omniprobe Inc Procede et appareil destines au remplacement in-situ de pointe de sonde a l'interieur d'un microscope a faisceau de particules chargees
JP4570980B2 (ja) * 2005-02-21 2010-10-27 エスアイアイ・ナノテクノロジー株式会社 試料台及び試料加工方法
JP4489652B2 (ja) * 2005-07-29 2010-06-23 アオイ電子株式会社 微小試料台集合体
JP4597045B2 (ja) * 2005-12-13 2010-12-15 株式会社日立ハイテクノロジーズ 微小試料移送装置及び方法
US20130001191A1 (en) * 2006-01-19 2013-01-03 Fibics Incorporated Redeposition technique for membrane attachment
EP1883095A1 (fr) * 2006-07-26 2008-01-30 FEI Company Dispositif de transfert pour transfert d'échantillons
JP5147567B2 (ja) * 2008-06-27 2013-02-20 株式会社日立ハイテクノロジーズ 電子分光器を有する透過型電子顕微鏡装置，試料ホルダ，試料台及びスペクトル像の取得方法
DE102008052006B4 (de) * 2008-10-10 2018-12-20 3D-Micromac Ag Verfahren und Vorrichtung zur Herstellung von Proben für die Transmissionselektronenmikroskopie
DE102009015713A1 (de) * 2009-03-31 2010-10-14 Globalfoundries Dresden Module One Llc & Co. Kg Verfahren und System zur Teilchenanalyse in Mikrostrukturbauelementen durch eine Isolierung von Teilchen
JP5702552B2 (ja) * 2009-05-28 2015-04-15 エフ イー アイ カンパニＦｅｉ Ｃｏｍｐａｎｙ デュアルビームシステムの制御方法
JP2011210492A (ja) * 2010-03-29 2011-10-20 Sii Nanotechnology Inc 集束イオンビーム装置
JP2012112770A (ja) * 2010-11-24 2012-06-14 Jeol Ltd 試料保持方法及び試料保持体
US8759765B2 (en) * 2011-08-08 2014-06-24 Omniprobe, Inc. Method for processing samples held by a nanomanipulator
EP2789008A4 (fr) * 2011-11-29 2015-07-22 Kla Tencor Corp Systèmes et procédés de préparation d'échantillons pour la recherche de défaut sous la surface
EP2812669B1 (fr) * 2012-02-10 2019-11-27 Arges GmbH Procédé permettant d'obtenir un contraste au moyen d'un laser et son dispositif de mise en oeuvre
DE102012010708B4 (de) * 2012-05-30 2021-12-23 Carl Zeiss Microscopy Gmbh Kombiniertes bearbeitungssystem zur bearbeitung mittels laser und fokussierten ionenstrahlen
JP5887247B2 (ja) * 2012-10-15 2016-03-16 株式会社日立ハイテクノロジーズ 荷電粒子線装置および試料作製法
EP2813835B1 (fr) * 2013-06-14 2016-09-07 Fei Company Procédé de soudage d'un échantillon aqueux congelé à une microsonde
DE102013012225A1 (de) * 2013-07-23 2015-01-29 Carl Zeiss Microscopy Gmbh Verfahren zur TEM-Lamellen-Herstellung und Anordnung für TEM-Lamellen-Schutzvorrichtung
US9449785B2 (en) * 2013-11-11 2016-09-20 Howard Hughes Medical Institute Workpiece transport and positioning apparatus
US9281163B2 (en) * 2014-04-14 2016-03-08 Fei Company High capacity TEM grid
CN105004595A (zh) * 2015-08-05 2015-10-28 江西稀有稀土金属钨业集团有限公司 一种储氢合金取样、制样的方法与系统
CN109239114A (zh) * 2018-09-29 2019-01-18 胜科纳米（苏州）有限公司 多功能样品台
RU2717442C1 (ru) * 2019-08-15 2020-03-23 Общество с ограниченной ответственностью "Объединенная Компания РУСАЛ Инженерно-технологический центр" Способ экспресс-определения криолитового отношения и концентрации фторида калия в электролите при получении алюминия
CN115816147B (zh) * 2022-12-06 2023-05-12 哈尔滨工业大学 一种超精密微量切割成形工作台

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2774884B2 (ja) * 1991-08-22 1998-07-09 株式会社日立製作所 試料の分離方法及びこの分離方法で得た分離試料の分析方法
JP2653424B2 (ja) 1995-09-25 1997-09-17 科学技術庁金属材料技術研究所長 マイクロプローブによる微小部品・微小構造物の作製方法
EP0927880A4 (fr) * 1997-07-22 2010-11-17 Hitachi Ltd Procede et dispositif de preparation d'echantillons
JP3633325B2 (ja) 1998-11-25 2005-03-30 株式会社日立製作所 試料作製装置および試料作製方法
JP3843637B2 (ja) 1999-02-23 2006-11-08 株式会社日立製作所 試料作製方法および試料作製システム
JP4178741B2 (ja) 2000-11-02 2008-11-12 株式会社日立製作所 荷電粒子線装置および試料作製装置
EP1209737B2 (fr) * 2000-11-06 2014-04-30 Hitachi, Ltd. Méthode de fabrication d'un échantillon

Also Published As

Publication number Publication date
JP2004212304A (ja) 2004-07-29
US6858851B2 (en) 2005-02-22
JP4088533B2 (ja) 2008-05-21
US20040129878A1 (en) 2004-07-08
FR2849696A1 (fr) 2004-07-09

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Legal Events

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Year of fee payment: 13

ST Notification of lapse

Effective date: 20170331