JP2008235397A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2008235397A JP2008235397A JP2007069994A JP2007069994A JP2008235397A JP 2008235397 A JP2008235397 A JP 2008235397A JP 2007069994 A JP2007069994 A JP 2007069994A JP 2007069994 A JP2007069994 A JP 2007069994A JP 2008235397 A JP2008235397 A JP 2008235397A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer
- film
- silicon nitride
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 42
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 88
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 85
- 239000010703 silicon Substances 0.000 claims abstract description 85
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 59
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 37
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 35
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 34
- 238000005121 nitriding Methods 0.000 claims abstract description 13
- 238000000034 method Methods 0.000 claims description 39
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 52
- 238000009792 diffusion process Methods 0.000 abstract description 33
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 29
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract description 21
- 229910052796 boron Inorganic materials 0.000 abstract description 21
- 238000009413 insulation Methods 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 65
- 239000007789 gas Substances 0.000 description 27
- 239000012535 impurity Substances 0.000 description 17
- 238000000231 atomic layer deposition Methods 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 230000000052 comparative effect Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 238000004937 angle-resolved X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 2
- 230000003213 activating effect Effects 0.000 description 1
- 238000001994 activation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/3141—Deposition using atomic layer deposition techniques [ALD]
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28202—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a nitrogen-containing ambient, e.g. nitride deposition, growth, oxynitridation, NH3 nitridation, N2O oxidation, thermal nitridation, RTN, plasma nitridation, RPN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28229—Making the insulator by deposition of a layer, e.g. metal, metal compound or poysilicon, followed by transformation thereof into an insulating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/318—Inorganic layers composed of nitrides
- H01L21/3185—Inorganic layers composed of nitrides of siliconnitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/0217—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
Abstract
【解決手段】半導体装置の製造方法は、シリコン基板11上に酸化シリコン膜13を形成するステップと、酸化シリコン膜13上に窒化シリコン膜14を形成するステップとを有する。窒化シリコン膜14を形成するステップが、酸化シリコン膜13上に単原子層よりも大きな厚みを有するシリコン層21を成長させる第1ステップと、シリコン層21を窒化して窒化シリコン層24を形成する第2ステップと、シリコン単原子層23を成長させる第3ステップと、シリコン単原子層23を窒化して窒化シリコン層24に形成する第4ステップとをこの順に含む。
【選択図】図2
Description
シリコン基板上に酸化シリコン膜を形成するステップと、該酸化シリコン膜上に窒化シリコン膜を形成するステップとを有する半導体装置の製造方法において、
前記窒化シリコン膜を形成するステップが、
前記酸化シリコン膜上に単原子層よりも大きな厚みを有する第1シリコン層を成長させる第1ステップと、該第1シリコン層を窒化して第1窒化シリコン層を形成する第2ステップと、単原子層の厚みを有する第2シリコン層を成長させる第3ステップと、該第2シリコン層を窒化して第2窒化シリコン層に形成する第4ステップとをこの順に含むことを特徴とする。
11:シリコン基板
12:ゲート絶縁膜
13:酸化シリコン膜
14:窒化シリコン膜
15:ゲート電極
16:マスク絶縁膜
17:サイドウォール絶縁膜
18:低濃度不純物拡散領域
19:高濃度不純物拡散領域
21:シリコン層
22:窒化シリコン層
23:シリコン単原子層
24:窒化シリコン層
24a:島状の窒化シリコン層
25:窒素
30:成膜装置
31:プロセスチューブ
32:ヒータ
33:排気口
34:ガス供給管
35:ガス供給管
36:吹出口
37:電極
38:保護管
39:ボード
40:ウエハ
Claims (5)
- シリコン基板上に酸化シリコン膜を形成するステップと、該酸化シリコン膜上に窒化シリコン膜を形成するステップとを有する半導体装置の製造方法において、
前記窒化シリコン膜を形成するステップが、
前記酸化シリコン膜上に単原子層よりも大きな厚みを有する第1シリコン層を成長させる第1ステップと、該第1シリコン層を窒化して第1窒化シリコン層を形成する第2ステップと、単原子層の厚みを有する第2シリコン層を成長させる第3ステップと、該第2シリコン層を窒化して第2窒化シリコン層に形成する第4ステップとをこの順に含むことを特徴とする半導体装置の製造方法。 - 前記第1シリコン層が、0.5〜1.0nmの厚みを有する、請求項1に記載の半導体装置の製造方法。
- 第1及び第2ステップに後続して、前記第3及び第4ステップを繰返し有する、請求項1又は2に記載の半導体装置の製造方法。
- 前記第1及び第3ステップでは、SiソースガスとしてSiH2Cl2を供給する、請求項1〜3の何れか一に記載の半導体装置の製造方法。
- 前記第2及び第4ステップでは、NソースガスとしてNH3を供給する、請求項1〜4の何れか一に記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007069994A JP2008235397A (ja) | 2007-03-19 | 2007-03-19 | 半導体装置の製造方法 |
US12/076,406 US7816281B2 (en) | 2007-03-19 | 2008-03-18 | Method for manufacturing a semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007069994A JP2008235397A (ja) | 2007-03-19 | 2007-03-19 | 半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2008235397A true JP2008235397A (ja) | 2008-10-02 |
Family
ID=39795204
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007069994A Pending JP2008235397A (ja) | 2007-03-19 | 2007-03-19 | 半導体装置の製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7816281B2 (ja) |
JP (1) | JP2008235397A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014017461A (ja) * | 2012-06-15 | 2014-01-30 | Ps4 Luxco S A R L | 半導体装置の製造方法 |
KR20140052763A (ko) * | 2012-10-25 | 2014-05-07 | 삼성전자주식회사 | 게이트 구조체를 갖는 반도체 소자 및 그 제조 방법들 |
JP2014192485A (ja) * | 2013-03-28 | 2014-10-06 | Hitachi Kokusai Electric Inc | 半導体装置の製造方法、基板処理方法及び基板処理装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217317A (ja) * | 2001-01-16 | 2002-08-02 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2002367990A (ja) * | 2001-06-04 | 2002-12-20 | Tokyo Electron Ltd | 半導体装置の製造方法 |
JP2004006455A (ja) * | 2002-05-31 | 2004-01-08 | Japan Science & Technology Corp | 半導体装置およびその製造方法 |
JP2005093677A (ja) * | 2003-09-17 | 2005-04-07 | Tokyo Electron Ltd | 成膜方法及び熱処理装置 |
JP2005534181A (ja) * | 2002-07-19 | 2005-11-10 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
JP2006135229A (ja) * | 2004-11-09 | 2006-05-25 | Elpida Memory Inc | 絶縁膜の成膜方法及びその絶縁膜を備えた半導体装置 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3746968B2 (ja) * | 2001-08-29 | 2006-02-22 | 東京エレクトロン株式会社 | 絶縁膜の形成方法および形成システム |
JP4477981B2 (ja) * | 2004-10-07 | 2010-06-09 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
US20080119057A1 (en) * | 2006-11-20 | 2008-05-22 | Applied Materials,Inc. | Method of clustering sequential processing for a gate stack structure |
-
2007
- 2007-03-19 JP JP2007069994A patent/JP2008235397A/ja active Pending
-
2008
- 2008-03-18 US US12/076,406 patent/US7816281B2/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002217317A (ja) * | 2001-01-16 | 2002-08-02 | Sony Corp | 不揮発性半導体記憶装置およびその製造方法 |
JP2002367990A (ja) * | 2001-06-04 | 2002-12-20 | Tokyo Electron Ltd | 半導体装置の製造方法 |
JP2004006455A (ja) * | 2002-05-31 | 2004-01-08 | Japan Science & Technology Corp | 半導体装置およびその製造方法 |
JP2005534181A (ja) * | 2002-07-19 | 2005-11-10 | エーエスエム アメリカ インコーポレイテッド | 超高品質シリコン含有化合物層の形成方法 |
JP2005093677A (ja) * | 2003-09-17 | 2005-04-07 | Tokyo Electron Ltd | 成膜方法及び熱処理装置 |
JP2006135229A (ja) * | 2004-11-09 | 2006-05-25 | Elpida Memory Inc | 絶縁膜の成膜方法及びその絶縁膜を備えた半導体装置 |
Also Published As
Publication number | Publication date |
---|---|
US7816281B2 (en) | 2010-10-19 |
US20080242107A1 (en) | 2008-10-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7994070B1 (en) | Low-temperature dielectric film formation by chemical vapor deposition | |
US7544996B2 (en) | Methods of fabricating a semiconductor device having a metal gate pattern | |
US7498270B2 (en) | Method of forming a silicon oxynitride film with tensile stress | |
KR101002445B1 (ko) | 단일 웨이퍼 저압 화학 기상 증착을 이용한 실리콘 산화물 및 옥시나이트라이드 증착 방법 | |
JP4863296B2 (ja) | 半導体装置の製造方法 | |
KR20010064414A (ko) | 반도체장치의 TaON 게이트절연막 형성방법 | |
CN101290886B (zh) | 栅极介质层及栅极的制造方法 | |
US7622402B2 (en) | Method for forming underlying insulation film | |
JP2007281181A (ja) | 半導体装置の製造方法 | |
JP4277268B2 (ja) | 金属化合物薄膜の製造方法、ならびに当該金属化合物薄膜を含む半導体装置の製造方法 | |
KR20090009283A (ko) | 절연막의 형성 방법 및 반도체 장치의 제조 방법 | |
US20150140838A1 (en) | Two Step Deposition of High-k Gate Dielectric Materials | |
WO2010055603A1 (ja) | 半導体装置及びその製造方法 | |
US20090275183A1 (en) | Method of manufacturing semiconductor device | |
KR101078498B1 (ko) | 절연체 박막의 제조 방법 | |
JP2008244059A (ja) | 半導体装置の製造方法 | |
US20210175075A1 (en) | Oxygen radical assisted dielectric film densification | |
JP2012104735A (ja) | 半導体装置及びその製造方法 | |
JP2009016500A (ja) | 半導体装置の製造方法 | |
JP2008235397A (ja) | 半導体装置の製造方法 | |
JP2006073758A (ja) | 半導体装置の製造方法 | |
JP3823798B2 (ja) | 窒化シリコン膜の形成方法、ゲート絶縁膜の形成方法及びp形半導体素子の形成方法 | |
JP2004165533A (ja) | 半導体装置の製造方法 | |
KR100680970B1 (ko) | 반도체 소자의 게이트 형성방법 | |
JP5141321B2 (ja) | 半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD01 | Notification of change of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7421 Effective date: 20100205 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100215 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120530 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20130730 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130822 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130910 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20131209 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20131212 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140310 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20141028 |