HK1199139A1 - Non-volatile semiconductor memory having multiple external power supplies - Google Patents

Non-volatile semiconductor memory having multiple external power supplies

Info

Publication number
HK1199139A1
HK1199139A1 HK14112551.0A HK14112551A HK1199139A1 HK 1199139 A1 HK1199139 A1 HK 1199139A1 HK 14112551 A HK14112551 A HK 14112551A HK 1199139 A1 HK1199139 A1 HK 1199139A1
Authority
HK
Hong Kong
Prior art keywords
semiconductor memory
external power
power supplies
volatile semiconductor
multiple external
Prior art date
Application number
HK14112551.0A
Other languages
English (en)
Chinese (zh)
Inventor
金鎮祺
．吉利厄姆
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of HK1199139A1 publication Critical patent/HK1199139A1/xx

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
HK14112551.0A 2007-02-16 2014-12-11 Non-volatile semiconductor memory having multiple external power supplies HK1199139A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US90200307P 2007-02-16 2007-02-16
US94999307P 2007-07-16 2007-07-16
US11/955,754 US7639540B2 (en) 2007-02-16 2007-12-13 Non-volatile semiconductor memory having multiple external power supplies

Publications (1)

Publication Number Publication Date
HK1199139A1 true HK1199139A1 (en) 2015-06-19

Family

ID=39689582

Family Applications (1)

Application Number Title Priority Date Filing Date
HK14112551.0A HK1199139A1 (en) 2007-02-16 2014-12-11 Non-volatile semiconductor memory having multiple external power supplies

Country Status (9)

Country Link
US (10) US7639540B2 (ja)
EP (2) EP3790009A1 (ja)
JP (3) JP2010518544A (ja)
KR (2) KR101041288B1 (ja)
CN (1) CN103903647B (ja)
CA (1) CA2675561C (ja)
HK (1) HK1199139A1 (ja)
TW (2) TWI387969B (ja)
WO (1) WO2008098350A1 (ja)

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