DE602004008833D1 - Nichtflüchtige Halbleiterspeichervorrichtung und deren Steuerungsverfahren - Google Patents

Nichtflüchtige Halbleiterspeichervorrichtung und deren Steuerungsverfahren

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Publication number
DE602004008833D1
DE602004008833D1 DE602004008833T DE602004008833T DE602004008833D1 DE 602004008833 D1 DE602004008833 D1 DE 602004008833D1 DE 602004008833 T DE602004008833 T DE 602004008833T DE 602004008833 T DE602004008833 T DE 602004008833T DE 602004008833 D1 DE602004008833 D1 DE 602004008833D1
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Prior art keywords
memory device
control method
semiconductor memory
volatile semiconductor
volatile
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DE602004008833T
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DE602004008833T2 (de
Inventor
Hidenori Morimoto
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Sharp Corp
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Sharp Corp
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Publication of DE602004008833D1 publication Critical patent/DE602004008833D1/de
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Publication of DE602004008833T2 publication Critical patent/DE602004008833T2/de
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5685—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using storage elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0064—Verifying circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/0071—Write using write potential applied to access device gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/30—Resistive cell, memory material aspects
    • G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/79—Array wherein the access device being a transistor
DE602004008833T 2003-06-12 2004-06-10 Nichtflüchtige Halbleiterspeichervorrichtung und deren Steuerungsverfahren Active DE602004008833T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003168223 2003-06-12
JP2003168223 2003-06-12
JP2003433815 2003-12-26
JP2003433815A JP4113493B2 (ja) 2003-06-12 2003-12-26 不揮発性半導体記憶装置及びその制御方法

Publications (2)

Publication Number Publication Date
DE602004008833D1 true DE602004008833D1 (de) 2007-10-25
DE602004008833T2 DE602004008833T2 (de) 2008-06-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004008833T Active DE602004008833T2 (de) 2003-06-12 2004-06-10 Nichtflüchtige Halbleiterspeichervorrichtung und deren Steuerungsverfahren

Country Status (7)

Country Link
US (1) US6995999B2 (de)
EP (1) EP1486985B1 (de)
JP (1) JP4113493B2 (de)
KR (1) KR100547969B1 (de)
CN (1) CN100479057C (de)
DE (1) DE602004008833T2 (de)
TW (1) TWI237271B (de)

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TW200506949A (en) 2005-02-16
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