DE602004025783D1 - Flash-Speicher und sein Programmierungsverfahren - Google Patents

Flash-Speicher und sein Programmierungsverfahren

Info

Publication number
DE602004025783D1
DE602004025783D1 DE602004025783T DE602004025783T DE602004025783D1 DE 602004025783 D1 DE602004025783 D1 DE 602004025783D1 DE 602004025783 T DE602004025783 T DE 602004025783T DE 602004025783 T DE602004025783 T DE 602004025783T DE 602004025783 D1 DE602004025783 D1 DE 602004025783D1
Authority
DE
Germany
Prior art keywords
flash memory
programming method
programming
flash
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602004025783T
Other languages
English (en)
Inventor
Oh-Suk Kwon
June Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE602004025783D1 publication Critical patent/DE602004025783D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/14—Circuits or methods to write a page or sector of information simultaneously into a nonvolatile memory, typically a complete row or word line in flash memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
DE602004025783T 2003-12-01 2004-11-17 Flash-Speicher und sein Programmierungsverfahren Active DE602004025783D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020030086371A KR100562506B1 (ko) 2003-12-01 2003-12-01 플래시 메모리 장치 및 그것의 프로그램 방법

Publications (1)

Publication Number Publication Date
DE602004025783D1 true DE602004025783D1 (de) 2010-04-15

Family

ID=34464786

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004025783T Active DE602004025783D1 (de) 2003-12-01 2004-11-17 Flash-Speicher und sein Programmierungsverfahren

Country Status (5)

Country Link
US (1) US7184308B2 (de)
EP (1) EP1538633B1 (de)
JP (1) JP2005166247A (de)
KR (1) KR100562506B1 (de)
DE (1) DE602004025783D1 (de)

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KR100648289B1 (ko) * 2005-07-25 2006-11-23 삼성전자주식회사 프로그램 속도를 향상시킬 수 있는 플래시 메모리 장치 및그것의 프로그램 방법
KR100655430B1 (ko) * 2005-11-17 2006-12-08 삼성전자주식회사 플래시 메모리 장치 및 그것의 워드 라인 인에이블 방법
US7369437B2 (en) 2005-12-16 2008-05-06 Sandisk Corporation System for reading non-volatile storage with efficient setup
KR101007371B1 (ko) * 2005-12-16 2011-01-13 샌디스크 코포레이션 비-휘발성 워드 라인들의 효율적인 제어로 비-휘발성 저장소자 판독
US7545675B2 (en) 2005-12-16 2009-06-09 Sandisk Corporation Reading non-volatile storage with efficient setup
US7616489B2 (en) * 2006-02-08 2009-11-10 Micron Technology, Inc. Memory array segmentation and methods
US7511995B2 (en) * 2006-03-30 2009-03-31 Sandisk Corporation Self-boosting system with suppression of high lateral electric fields
US7626866B2 (en) * 2006-07-28 2009-12-01 Micron Technology, Inc. NAND flash memory programming
US7710786B2 (en) * 2006-08-28 2010-05-04 Micron Technology, Inc. NAND flash memory programming
KR100794664B1 (ko) * 2006-09-01 2008-01-14 삼성전자주식회사 플래시 메모리 장치 및 그것의 리프레쉬 방법
KR100875292B1 (ko) * 2006-09-19 2008-12-23 삼성전자주식회사 플래시 메모리 장치 및 그것의 리프레쉬 방법
KR100851546B1 (ko) * 2006-09-22 2008-08-11 삼성전자주식회사 비휘발성 기억 장치 및 그 동작 방법
US7420851B2 (en) * 2006-10-24 2008-09-02 San Disk 3D Llc Memory device for controlling current during programming of memory cells
US7589989B2 (en) * 2006-10-24 2009-09-15 Sandisk 3D Llc Method for protecting memory cells during programming
US7391638B2 (en) * 2006-10-24 2008-06-24 Sandisk 3D Llc Memory device for protecting memory cells during programming
US7420850B2 (en) * 2006-10-24 2008-09-02 Sandisk 3D Llc Method for controlling current during programming of memory cells
US7623386B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Reducing program disturb in non-volatile storage using early source-side boosting
US7623387B2 (en) * 2006-12-12 2009-11-24 Sandisk Corporation Non-volatile storage with early source-side boosting for reducing program disturb
US7606070B2 (en) * 2006-12-29 2009-10-20 Sandisk Corporation Systems for margined neighbor reading for non-volatile memory read operations including coupling compensation
US7440327B1 (en) 2007-04-25 2008-10-21 Sandisk Corporation Non-volatile storage with reduced power consumption during read operations
US7606079B2 (en) * 2007-04-25 2009-10-20 Sandisk Corporation Reducing power consumption during read operations in non-volatile storage
TWI349335B (en) * 2007-05-02 2011-09-21 Eon Silicon Solution Inc Single-poly non-volatile memory
US7463522B2 (en) * 2007-05-07 2008-12-09 Sandisk Corporation Non-volatile storage with boosting using channel isolation switching
US7460404B1 (en) * 2007-05-07 2008-12-02 Sandisk Corporation Boosting for non-volatile storage using channel isolation switching
US7577026B2 (en) * 2007-05-07 2009-08-18 Sandisk Corporation Source and drain side early boosting using local self boosting for non-volatile storage
WO2008137687A1 (en) * 2007-05-07 2008-11-13 Sandisk Corporation Boosting for non-volatile storage using channel isolation switching
KR100885785B1 (ko) * 2007-09-10 2009-02-26 주식회사 하이닉스반도체 플래시 메모리 소자의 프로그램 방법
US7916544B2 (en) 2008-01-25 2011-03-29 Micron Technology, Inc. Random telegraph signal noise reduction scheme for semiconductor memories
KR20090120205A (ko) * 2008-05-19 2009-11-24 삼성전자주식회사 플래시 메모리 장치 및 그것의 동작 방법
KR100953055B1 (ko) 2008-05-20 2010-04-15 주식회사 하이닉스반도체 불휘발성 메모리 소자의 동작 방법
KR101463584B1 (ko) 2008-07-30 2014-11-19 삼성전자주식회사 비휘발성 메모리 장치 및 그것의 프로그램 방법
US8692310B2 (en) 2009-02-09 2014-04-08 Spansion Llc Gate fringing effect based channel formation for semiconductor device
US8264887B2 (en) * 2009-05-29 2012-09-11 Hynix Semiconductor Inc. Nonvolatile memory device and method of programming the same
KR101604631B1 (ko) * 2009-07-21 2016-03-18 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 프로그램 방법
KR101634363B1 (ko) * 2009-10-05 2016-06-29 삼성전자주식회사 불휘발성 메모리 장치 및 그것의 프로그램 방법
KR101561270B1 (ko) * 2009-10-15 2015-10-19 삼성전자주식회사 플래시 메모리 장치 그리고 그것의 채널 프리챠지 및 프로그램 방법들
US8638609B2 (en) * 2010-05-19 2014-01-28 Spansion Llc Partial local self boosting for NAND
US20120236649A1 (en) * 2011-03-17 2012-09-20 Macronix International Co., Ltd. Hot carrier programming of nand flash memory
KR101891164B1 (ko) * 2012-04-17 2018-08-23 삼성전자주식회사 프로그램 스케줄러를 포함하는 플래시 메모리 장치
US9236102B2 (en) 2012-10-12 2016-01-12 Micron Technology, Inc. Apparatuses, circuits, and methods for biasing signal lines
US9042190B2 (en) 2013-02-25 2015-05-26 Micron Technology, Inc. Apparatuses, sense circuits, and methods for compensating for a wordline voltage increase
US9672875B2 (en) 2014-01-27 2017-06-06 Micron Technology, Inc. Methods and apparatuses for providing a program voltage responsive to a voltage determination
KR102110844B1 (ko) 2014-06-02 2020-05-14 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
CN107945831B (zh) * 2016-10-12 2020-09-18 北京兆易创新科技股份有限公司 减小nand闪存编程建立时间的电路和nand闪存
CN109785876B (zh) * 2017-11-10 2021-06-04 旺宏电子股份有限公司 存储器装置及其操作方法
KR102532998B1 (ko) * 2018-04-16 2023-05-16 삼성전자주식회사 비휘발성 메모리 장치 및 비휘발성 메모리 장치의 프로그램 방법
KR102442216B1 (ko) * 2018-04-19 2022-09-08 에스케이하이닉스 주식회사 메모리 장치 및 그 동작 방법
US10726922B2 (en) 2018-06-05 2020-07-28 Sandisk Technologies Llc Memory device with connected word lines for fast programming
JP2020009509A (ja) * 2018-07-03 2020-01-16 キオクシア株式会社 半導体記憶装置
US20200243121A1 (en) * 2019-01-30 2020-07-30 Macronix International Co., Ltd. Non-volatile memory and program method thereof

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JPH0743951B2 (ja) 1988-11-17 1995-05-15 三菱電機株式会社 半導体記憶装置
KR0172441B1 (ko) 1995-09-19 1999-03-30 김광호 불휘발성 반도체 메모리의 프로그램 방법
KR100253868B1 (ko) * 1995-11-13 2000-05-01 니시무로 타이죠 불휘발성 반도체기억장치
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KR100323553B1 (ko) 1997-02-03 2002-03-08 니시무로 타이죠 데이타오기입방지능력이있는비휘발성반도체메모리
JPH11273367A (ja) 1998-03-19 1999-10-08 Toshiba Corp 半導体集積回路装置
US6094494A (en) * 1998-08-13 2000-07-25 Haroldson; Olaf Hearing aid device and method for providing an improved fit and reduced feedback
JP3175705B2 (ja) * 1998-09-18 2001-06-11 日本電気株式会社 不揮発性半導体記憶装置の製造方法
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KR100290282B1 (ko) * 1998-11-23 2001-05-15 윤종용 프로그램 시간을 단축할 수 있는 불 휘발성반도체메모리 장치
KR100328359B1 (ko) 1999-06-22 2002-03-13 윤종용 기판 전압 바운싱을 최소화할 수 있는 플래시 메모리 장치 및그것의 프로그램 방법
JP3810985B2 (ja) 2000-05-22 2006-08-16 株式会社東芝 不揮発性半導体メモリ
KR100395771B1 (ko) 2001-06-16 2003-08-21 삼성전자주식회사 불휘발성 반도체 메모리 장치 및 그것의 프로그램 방법
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Also Published As

Publication number Publication date
JP2005166247A (ja) 2005-06-23
EP1538633B1 (de) 2010-03-03
EP1538633A3 (de) 2006-09-13
EP1538633A2 (de) 2005-06-08
KR100562506B1 (ko) 2006-03-21
KR20050052807A (ko) 2005-06-07
US7184308B2 (en) 2007-02-27
US20050117399A1 (en) 2005-06-02

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