DE60041166D1 - Halbleiterdünnschichtherstellungssystem - Google Patents
HalbleiterdünnschichtherstellungssystemInfo
- Publication number
- DE60041166D1 DE60041166D1 DE60041166T DE60041166T DE60041166D1 DE 60041166 D1 DE60041166 D1 DE 60041166D1 DE 60041166 T DE60041166 T DE 60041166T DE 60041166 T DE60041166 T DE 60041166T DE 60041166 D1 DE60041166 D1 DE 60041166D1
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- manufacturing system
- semiconductor thin
- film manufacturing
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/042—Automatically aligning the laser beam
- B23K26/043—Automatically aligning the laser beam along the beam path, i.e. alignment of laser beam axis relative to laser beam apparatus
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
- B23K26/046—Automatically focusing the laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/0604—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams
- B23K26/0608—Shaping the laser beam, e.g. by masks or multi-focusing by a combination of beams in the same heat affected zone [HAZ]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/064—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms
- B23K26/066—Shaping the laser beam, e.g. by masks or multi-focusing by means of optical elements, e.g. lenses, mirrors or prisms by using masks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/067—Dividing the beam into multiple beams, e.g. multifocusing
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
- B23K26/0732—Shaping the laser spot into a rectangular shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02587—Structure
- H01L21/0259—Microstructure
- H01L21/02598—Microstructure monocrystalline
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02678—Beam shaping, e.g. using a mask
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02683—Continuous wave laser beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
- H01L21/02686—Pulsed laser beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
- H01L21/02691—Scanning of a beam
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
- H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
- H01L27/1285—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor using control of the annealing or irradiation parameters, e.g. using different scanning direction or intensity for different transistors
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11194024A JP2001023918A (ja) | 1999-07-08 | 1999-07-08 | 半導体薄膜形成装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60041166D1 true DE60041166D1 (de) | 2009-02-05 |
Family
ID=16317686
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60041166T Expired - Fee Related DE60041166D1 (de) | 1999-07-08 | 2000-07-08 | Halbleiterdünnschichtherstellungssystem |
Country Status (6)
Country | Link |
---|---|
US (3) | US6861614B1 (de) |
EP (2) | EP1998364A3 (de) |
JP (1) | JP2001023918A (de) |
KR (2) | KR100499961B1 (de) |
DE (1) | DE60041166D1 (de) |
TW (1) | TW479367B (de) |
Families Citing this family (160)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6555449B1 (en) | 1996-05-28 | 2003-04-29 | Trustees Of Columbia University In The City Of New York | Methods for producing uniform large-grained and grain boundary location manipulated polycrystalline thin film semiconductors using sequential lateral solidfication |
JP3491571B2 (ja) | 1999-07-13 | 2004-01-26 | 日本電気株式会社 | 半導体薄膜の形成方法 |
JP3751772B2 (ja) * | 1999-08-16 | 2006-03-01 | 日本電気株式会社 | 半導体薄膜製造装置 |
US6573531B1 (en) * | 1999-09-03 | 2003-06-03 | The Trustees Of Columbia University In The City Of New York | Systems and methods using sequential lateral solidification for producing single or polycrystalline silicon thin films at low temperatures |
JP4514861B2 (ja) * | 1999-11-29 | 2010-07-28 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法および半導体装置の作製方法 |
US6830993B1 (en) | 2000-03-21 | 2004-12-14 | The Trustees Of Columbia University In The City Of New York | Surface planarization of thin silicon films during and after processing by the sequential lateral solidification method |
MXPA02005590A (es) | 2000-10-10 | 2002-09-30 | Univ Columbia | Metodo y aparato para procesar capas de metal delgadas. |
US6770562B2 (en) * | 2000-10-26 | 2004-08-03 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and film formation method |
CN1200320C (zh) | 2000-11-27 | 2005-05-04 | 纽约市哥伦比亚大学托管会 | 用激光结晶化法加工衬底上半导体薄膜区域的方法和掩模投影系统 |
JP4845267B2 (ja) * | 2001-01-15 | 2011-12-28 | 東芝モバイルディスプレイ株式会社 | レーザアニール装置およびレーザアニール方法 |
JP2002246381A (ja) * | 2001-02-15 | 2002-08-30 | Anelva Corp | Cvd方法 |
US7079564B2 (en) * | 2001-04-09 | 2006-07-18 | Cymer, Inc. | Control system for a two chamber gas discharge laser |
US7009140B2 (en) * | 2001-04-18 | 2006-03-07 | Cymer, Inc. | Laser thin film poly-silicon annealing optical system |
JP2003059894A (ja) * | 2001-06-05 | 2003-02-28 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
TW552645B (en) | 2001-08-03 | 2003-09-11 | Semiconductor Energy Lab | Laser irradiating device, laser irradiating method and manufacturing method of semiconductor device |
WO2003018882A1 (en) | 2001-08-27 | 2003-03-06 | The Trustees Of Columbia University In The City Of New York | Improved polycrystalline tft uniformity through microstructure mis-alignment |
JP3977038B2 (ja) | 2001-08-27 | 2007-09-19 | 株式会社半導体エネルギー研究所 | レーザ照射装置およびレーザ照射方法 |
US7830934B2 (en) * | 2001-08-29 | 2010-11-09 | Cymer, Inc. | Multi-chamber gas discharge laser bandwidth control through discharge timing |
SG120880A1 (en) * | 2001-08-31 | 2006-04-26 | Semiconductor Energy Lab | Laser irradiation method, laser irradiation apparatus, and method of manufacturing a semiconductor device |
TW200304175A (en) * | 2001-11-12 | 2003-09-16 | Sony Corp | Laser annealing device and thin-film transistor manufacturing method |
US7026227B2 (en) * | 2001-11-16 | 2006-04-11 | Semiconductor Energy Laboratory Co., Ltd. | Method of irradiating a laser beam, and method of fabricating semiconductor devices |
US7105048B2 (en) | 2001-11-30 | 2006-09-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
US7133737B2 (en) * | 2001-11-30 | 2006-11-07 | Semiconductor Energy Laboratory Co., Ltd. | Program for controlling laser apparatus and recording medium for recording program for controlling laser apparatus and capable of being read out by computer |
KR100831227B1 (ko) * | 2001-12-17 | 2008-05-21 | 삼성전자주식회사 | 다결정 규소를 이용한 박막 트랜지스터의 제조 방법 |
US7135389B2 (en) * | 2001-12-20 | 2006-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Irradiation method of laser beam |
JP4011344B2 (ja) * | 2001-12-28 | 2007-11-21 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP1326273B1 (de) | 2001-12-28 | 2012-01-18 | Semiconductor Energy Laboratory Co., Ltd. | Halbleitervorrichtung |
US6933527B2 (en) | 2001-12-28 | 2005-08-23 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and semiconductor device production system |
JP4627135B2 (ja) * | 2001-12-28 | 2011-02-09 | 株式会社半導体エネルギー研究所 | 半導体装置の生産方法 |
US6841797B2 (en) | 2002-01-17 | 2005-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device formed over a surface with a drepession portion and a projection portion |
US6847050B2 (en) * | 2002-03-15 | 2005-01-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor element and semiconductor device comprising the same |
AU2003220611A1 (en) | 2002-04-01 | 2003-10-20 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a thin film |
US6727125B2 (en) * | 2002-04-17 | 2004-04-27 | Sharp Laboratories Of America, Inc. | Multi-pattern shadow mask system and method for laser annealing |
US6984573B2 (en) * | 2002-06-14 | 2006-01-10 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method and apparatus |
WO2004017382A2 (en) | 2002-08-19 | 2004-02-26 | The Trustees Of Columbia University In The City Of New York | Process and system for laser crystallization processing of film regions on a substrate to provide substantial uniformity within areas in such regions and edge areas thereof, and a structure of such film regions |
TWI331803B (en) | 2002-08-19 | 2010-10-11 | Univ Columbia | A single-shot semiconductor processing system and method having various irradiation patterns |
CN100459041C (zh) | 2002-08-19 | 2009-02-04 | 纽约市哥伦比亚大学托管会 | 激光结晶处理薄膜样品以最小化边缘区域的方法和系统 |
JP4879486B2 (ja) | 2002-08-19 | 2012-02-22 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 基板上のフィルム領域をレーザ結晶化処理してほぼ均一にするプロセス及びシステム、及びこのフィルム領域の構造 |
JP2004128421A (ja) * | 2002-10-07 | 2004-04-22 | Semiconductor Energy Lab Co Ltd | レーザ照射方法およびレーザ照射装置、並びに半導体装置の作製方法 |
US7638732B1 (en) * | 2002-10-24 | 2009-12-29 | Analogic Corporation | Apparatus and method for making X-ray anti-scatter grid |
US7387922B2 (en) * | 2003-01-21 | 2008-06-17 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, method for manufacturing semiconductor device, and laser irradiation system |
WO2004075263A2 (en) | 2003-02-19 | 2004-09-02 | The Trustees Of Columbia University In The City Of New York | System and process for processing a plurality of semiconductor thin films which are crystallized using sequential lateral solidification techniques |
JP4498734B2 (ja) * | 2003-02-28 | 2010-07-07 | 株式会社半導体エネルギー研究所 | レーザー光照射装置 |
EP1468774B1 (de) * | 2003-02-28 | 2009-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Verfahren und Vorrichtung zur Laserbestrahlung, sowie Verfahren zur Herstellung von Halbleiter. |
KR100534579B1 (ko) * | 2003-03-05 | 2005-12-07 | 삼성에스디아이 주식회사 | 다결정 실리콘 박막, 이의 제조 방법 및 이를 이용하여제조된 액티브 채널 방향 의존성이 없는 박막 트랜지스터 |
KR100992120B1 (ko) * | 2003-03-13 | 2010-11-04 | 삼성전자주식회사 | 규소 결정화 시스템 및 규소 결정화 방법 |
US8346497B2 (en) * | 2003-03-26 | 2013-01-01 | Semiconductor Energy Laboratory Co., Ltd. | Method for testing semiconductor film, semiconductor device and manufacturing method thereof |
US7277188B2 (en) * | 2003-04-29 | 2007-10-02 | Cymer, Inc. | Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate |
JP4583004B2 (ja) * | 2003-05-21 | 2010-11-17 | 株式会社 日立ディスプレイズ | アクティブ・マトリクス基板の製造方法 |
CN100340911C (zh) | 2003-06-25 | 2007-10-03 | Lg.菲利浦Lcd株式会社 | 非晶硅层结晶方法、阵列基板、液晶显示器及其制造方法 |
KR100587368B1 (ko) * | 2003-06-30 | 2006-06-08 | 엘지.필립스 엘시디 주식회사 | Sls 결정화 장치 |
KR100720452B1 (ko) * | 2003-06-30 | 2007-05-22 | 엘지.필립스 엘시디 주식회사 | 레이저 조사 장치 및 이를 이용한 실리콘 결정화 방법 |
KR100546711B1 (ko) * | 2003-08-18 | 2006-01-26 | 엘지.필립스 엘시디 주식회사 | 레이저 조사 장치 및 이를 이용한 실리콘 결정화 방법 |
US7364952B2 (en) * | 2003-09-16 | 2008-04-29 | The Trustees Of Columbia University In The City Of New York | Systems and methods for processing thin films |
WO2005029549A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for facilitating bi-directional growth |
US7164152B2 (en) | 2003-09-16 | 2007-01-16 | The Trustees Of Columbia University In The City Of New York | Laser-irradiated thin films having variable thickness |
WO2005029547A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Enhancing the width of polycrystalline grains with mask |
WO2005029551A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions |
US7318866B2 (en) | 2003-09-16 | 2008-01-15 | The Trustees Of Columbia University In The City Of New York | Systems and methods for inducing crystallization of thin films using multiple optical paths |
WO2005029546A2 (en) | 2003-09-16 | 2005-03-31 | The Trustees Of Columbia University In The City Of New York | Method and system for providing a continuous motion sequential lateral solidification for reducing or eliminating artifacts, and a mask for facilitating such artifact reduction/elimination |
KR100531416B1 (ko) * | 2003-09-17 | 2005-11-29 | 엘지.필립스 엘시디 주식회사 | Sls 장비 및 이를 이용한 실리콘 결정화 방법 |
US7311778B2 (en) | 2003-09-19 | 2007-12-25 | The Trustees Of Columbia University In The City Of New York | Single scan irradiation for crystallization of thin films |
KR100573225B1 (ko) * | 2003-09-24 | 2006-04-24 | 엘지.필립스 엘시디 주식회사 | 비정질 실리콘층의 결정화 방법 |
KR100606447B1 (ko) * | 2003-12-24 | 2006-07-31 | 엘지.필립스 엘시디 주식회사 | 최적의 포컬 플레인 결정방법 및 이를 이용한 결정화방법 |
KR100525443B1 (ko) | 2003-12-24 | 2005-11-02 | 엘지.필립스 엘시디 주식회사 | 결정화 장비 및 이를 이용한 결정화 방법 |
KR100617035B1 (ko) * | 2003-12-26 | 2006-08-30 | 엘지.필립스 엘시디 주식회사 | 결정화 장비 |
KR100575235B1 (ko) * | 2003-12-30 | 2006-05-02 | 엘지.필립스 엘시디 주식회사 | 레이저 광학계 및 이를 이용한 결정화 방법 |
TWI239936B (en) * | 2004-02-27 | 2005-09-21 | Au Optronics Corp | Laser annealing apparatus and laser annealing method |
CN1925945A (zh) | 2004-03-05 | 2007-03-07 | 奥林巴斯株式会社 | 激光加工装置 |
US7812283B2 (en) | 2004-03-26 | 2010-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation method, laser irradiation apparatus, and method for fabricating semiconductor device |
US7655152B2 (en) | 2004-04-26 | 2010-02-02 | Hewlett-Packard Development Company, L.P. | Etching |
US8525075B2 (en) | 2004-05-06 | 2013-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus |
JP2006029893A (ja) * | 2004-07-14 | 2006-02-02 | Agilent Technol Inc | ディスプレイパネルの製造システム、それに用いられる製造方法、及びそのための検査装置 |
JP2008511138A (ja) * | 2004-08-18 | 2008-04-10 | ニュー ウエイ マシーン コンポーネント インコーポレイティッド | 空気軸受と段差ポンプ溝を備えた移動真空チャンバステージ |
CN101667538B (zh) * | 2004-08-23 | 2012-10-10 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
US7645337B2 (en) | 2004-11-18 | 2010-01-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for creating crystallographic-orientation controlled poly-silicon films |
US20060157684A1 (en) * | 2004-12-15 | 2006-07-20 | The Regents Of The University Of California | Thin film multilayer with nanolayers addressable from the macroscale |
KR101326133B1 (ko) * | 2005-03-10 | 2013-11-06 | 삼성디스플레이 주식회사 | 평판 표시 장치 제조 시스템 |
US8221544B2 (en) | 2005-04-06 | 2012-07-17 | The Trustees Of Columbia University In The City Of New York | Line scan sequential lateral solidification of thin films |
US20060261051A1 (en) * | 2005-05-19 | 2006-11-23 | Mark Unrath | Synthetic pulse repetition rate processing for dual-headed laser micromachining systems |
JP2005347764A (ja) * | 2005-07-19 | 2005-12-15 | Hitachi Ltd | 画像表示装置の製造方法 |
JP4749799B2 (ja) * | 2005-08-12 | 2011-08-17 | 浜松ホトニクス株式会社 | レーザ加工方法 |
JP2007123300A (ja) * | 2005-10-25 | 2007-05-17 | Toyota Motor Corp | 不純物活性化方法、レーザアニール装置、半導体装置とその製造方法 |
US7679029B2 (en) | 2005-10-28 | 2010-03-16 | Cymer, Inc. | Systems and methods to shape laser light as a line beam for interaction with a substrate having surface variations |
US7317179B2 (en) * | 2005-10-28 | 2008-01-08 | Cymer, Inc. | Systems and methods to shape laser light as a homogeneous line beam for interaction with a film deposited on a substrate |
JP2009518864A (ja) | 2005-12-05 | 2009-05-07 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 膜を加工するためのシステム及び方法並びに薄膜 |
WO2007072837A1 (en) * | 2005-12-20 | 2007-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Laser irradiation apparatus and method for manufacturing semiconductor device |
KR101351474B1 (ko) | 2005-12-20 | 2014-01-14 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 레이저 조사장치, 레이저 조사방법, 및 반도체장치제조방법 |
JP4930052B2 (ja) * | 2006-02-15 | 2012-05-09 | 住友電気工業株式会社 | GaN基板の裏面の反り測定方法 |
JP4625775B2 (ja) * | 2006-02-17 | 2011-02-02 | 株式会社アルバック | イオン注入装置 |
KR101224377B1 (ko) * | 2006-02-17 | 2013-01-21 | 삼성디스플레이 주식회사 | 실리콘층의 형성방법 및 이를 이용한 표시기판의 제조방법 |
JP4339330B2 (ja) * | 2006-04-19 | 2009-10-07 | 日本電気株式会社 | レーザ照射方法及びレーザ照射装置 |
US7514305B1 (en) * | 2006-06-28 | 2009-04-07 | Ultratech, Inc. | Apparatus and methods for improving the intensity profile of a beam image used to process a substrate |
JP4961897B2 (ja) * | 2006-08-29 | 2012-06-27 | ソニー株式会社 | レーザー照射装置、レーザー照射方法、薄膜半導体装置の製造方法、及び表示装置の製造方法 |
US7615404B2 (en) * | 2006-10-31 | 2009-11-10 | Intel Corporation | High-contrast laser mark on substrate surfaces |
US7750818B2 (en) * | 2006-11-29 | 2010-07-06 | Adp Engineering Co., Ltd. | System and method for introducing a substrate into a process chamber |
JP2008221299A (ja) * | 2007-03-14 | 2008-09-25 | Hitachi Via Mechanics Ltd | レーザ加工装置 |
JP2007288219A (ja) * | 2007-07-06 | 2007-11-01 | Sumitomo Heavy Ind Ltd | レーザ照射装置 |
US7966743B2 (en) * | 2007-07-31 | 2011-06-28 | Eastman Kodak Company | Micro-structured drying for inkjet printers |
JP4900128B2 (ja) * | 2007-08-07 | 2012-03-21 | 日本電気株式会社 | 半導体薄膜改質方法 |
US8614471B2 (en) | 2007-09-21 | 2013-12-24 | The Trustees Of Columbia University In The City Of New York | Collections of laterally crystallized semiconductor islands for use in thin film transistors |
JP5385289B2 (ja) | 2007-09-25 | 2014-01-08 | ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク | 横方向に結晶化した薄膜上に作製される薄膜トランジスタデバイスにおいて高い均一性を生成する方法 |
KR100953657B1 (ko) * | 2007-11-13 | 2010-04-20 | 삼성모바일디스플레이주식회사 | 박막트랜지스터 및 그 제조방법과 이를 구비하는유기전계발광표시장치 |
US8012861B2 (en) | 2007-11-21 | 2011-09-06 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
WO2009067688A1 (en) | 2007-11-21 | 2009-05-28 | The Trustees Of Columbia University In The City Of New York | Systems and methods for preparing epitaxially textured polycrystalline films |
CN103354204A (zh) | 2007-11-21 | 2013-10-16 | 纽约市哥伦比亚大学理事会 | 用于制备外延纹理厚膜的系统和方法 |
JP5498659B2 (ja) * | 2008-02-07 | 2014-05-21 | 株式会社半導体エネルギー研究所 | レーザ照射位置安定性評価方法及びレーザ照射装置 |
KR100864062B1 (ko) * | 2008-02-22 | 2008-10-16 | 한국철강 주식회사 | 태양전지 모듈 패터닝 장치 |
WO2009111340A2 (en) | 2008-02-29 | 2009-09-11 | The Trustees Of Columbia University In The City Of New York | Flash lamp annealing crystallization for large area thin films |
WO2009111774A2 (en) * | 2008-03-07 | 2009-09-11 | The Ohio State University | Low-temperature spot impact welding driven without contact |
EP2308093B1 (de) * | 2008-08-04 | 2020-04-15 | The Trustees of Princeton University | Dielektrisches hybridmaterial für dünnschichttranssitoren |
US7756171B2 (en) * | 2008-10-21 | 2010-07-13 | Cymer, Inc. | Method and apparatus for laser control in a two chamber gas discharge laser |
US7720120B2 (en) * | 2008-10-21 | 2010-05-18 | Cymer, Inc. | Method and apparatus for laser control in a two chamber gas discharge laser |
US7751453B2 (en) * | 2008-10-21 | 2010-07-06 | Cymer, Inc. | Method and apparatus for laser control in a two chamber gas discharge laser |
US8802580B2 (en) | 2008-11-14 | 2014-08-12 | The Trustees Of Columbia University In The City Of New York | Systems and methods for the crystallization of thin films |
JP5126076B2 (ja) * | 2009-01-08 | 2013-01-23 | 富士通株式会社 | 位置測定装置、成膜方法並びに成膜プログラム及び成膜装置 |
US8440581B2 (en) | 2009-11-24 | 2013-05-14 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse sequential lateral solidification |
US9646831B2 (en) | 2009-11-03 | 2017-05-09 | The Trustees Of Columbia University In The City Of New York | Advanced excimer laser annealing for thin films |
US9087696B2 (en) | 2009-11-03 | 2015-07-21 | The Trustees Of Columbia University In The City Of New York | Systems and methods for non-periodic pulse partial melt film processing |
KR101353012B1 (ko) * | 2009-11-17 | 2014-01-22 | 가부시키가이샤 히다치 하이테크놀로지즈 | 시료 처리 장치, 시료 처리 시스템 및 시료의 처리 방법 |
TWI528418B (zh) | 2009-11-30 | 2016-04-01 | 應用材料股份有限公司 | 在半導體應用上的結晶處理 |
KR101097327B1 (ko) * | 2010-01-07 | 2011-12-23 | 삼성모바일디스플레이주식회사 | 기판 밀봉에 사용되는 레이저 빔 조사 장치 및 이를 이용한 유기 발광 디스플레이 장치의 제조 방법 |
JP4865878B2 (ja) * | 2010-03-25 | 2012-02-01 | 株式会社日本製鋼所 | 雰囲気安定化方法およびレーザ処理装置 |
JP5595152B2 (ja) * | 2010-07-14 | 2014-09-24 | 住友重機械工業株式会社 | レーザアニール方法 |
JP5100914B2 (ja) * | 2010-10-15 | 2012-12-19 | 三菱電機株式会社 | レーザ加工機及び蛇腹装置 |
KR200464501Y1 (ko) * | 2010-12-08 | 2013-01-21 | 미래산업 주식회사 | 엔코더장치, 이를 포함하는 선형전동기, 및 이를 포함하는 기판 이송장치 |
ES2438751T3 (es) | 2011-09-05 | 2014-01-20 | ALLTEC Angewandte Laserlicht Technologie Gesellschaft mit beschränkter Haftung | Dispositivo y procedimiento para marcar un objeto por medio de un rayo láser |
EP2564972B1 (de) * | 2011-09-05 | 2015-08-26 | ALLTEC Angewandte Laserlicht Technologie Gesellschaft mit beschränkter Haftung | Markierungsvorrichtung mith mehreren Lasern, Deflektionmitteln und Telescopikmitteln für jeden Laserstrahl |
EP2564976B1 (de) | 2011-09-05 | 2015-06-10 | ALLTEC Angewandte Laserlicht Technologie Gesellschaft mit beschränkter Haftung | Markierungsvorrichtung mit mindestens einem Gaslaser und einer Kühleinrichtung |
DK2564973T3 (en) * | 2011-09-05 | 2015-01-12 | Alltec Angewandte Laserlicht Technologie Ges Mit Beschränkter Haftung | Marking apparatus having a plurality of lasers and a kombineringsafbøjningsindretning |
EP2564974B1 (de) * | 2011-09-05 | 2015-06-17 | ALLTEC Angewandte Laserlicht Technologie Gesellschaft mit beschränkter Haftung | Markierungsvorrichtung mit mehreren Resonatorröhren aufweisenden Gas-Lasern und einzel justierbaren Deflektoren |
DK2565996T3 (da) | 2011-09-05 | 2014-01-13 | Alltec Angewandte Laserlicht Technologie Gmbh | Laserindretning med en laserenhed og en fluidbeholder til en køleindretning af laserenheden |
ES2530070T3 (es) * | 2011-09-05 | 2015-02-26 | ALLTEC Angewandte Laserlicht Technologie Gesellschaft mit beschränkter Haftung | Aparato de marcado con una pluralidad de láseres y conjuntos ajustables individualmente de medios de desviación |
EP2565994B1 (de) | 2011-09-05 | 2014-02-12 | ALLTEC Angewandte Laserlicht Technologie Gesellschaft mit beschränkter Haftung | Laservorrichtung und -verfahren zum Markieren eines Gegenstands |
KR101810062B1 (ko) | 2011-10-14 | 2017-12-19 | 삼성디스플레이 주식회사 | 레이저 결정화 장치 및 레이저 결정화 방법 |
JP2013149924A (ja) * | 2012-01-23 | 2013-08-01 | Japan Display Central Co Ltd | レーザアニール装置 |
KR102108939B1 (ko) * | 2012-04-18 | 2020-05-12 | 어플라이드 머티어리얼스, 인코포레이티드 | 발전된 어닐링 프로세스에서 입자를 감소시키기 위한 장치 및 방법 |
US9048190B2 (en) * | 2012-10-09 | 2015-06-02 | Applied Materials, Inc. | Methods and apparatus for processing substrates using an ion shield |
JP5843292B2 (ja) * | 2013-03-21 | 2016-01-13 | 株式会社日本製鋼所 | アニール処理半導体基板の製造方法、走査装置およびレーザ処理装置 |
JP6270820B2 (ja) * | 2013-03-27 | 2018-01-31 | 国立大学法人九州大学 | レーザアニール装置 |
CN103325961B (zh) * | 2013-05-22 | 2016-05-18 | 上海和辉光电有限公司 | Oled封装加热装置及工艺方法 |
KR20140142856A (ko) * | 2013-06-05 | 2014-12-15 | 삼성디스플레이 주식회사 | 레이저 장치 및 이를 이용한 결정화 방법 |
KR101507381B1 (ko) * | 2014-02-26 | 2015-03-30 | 주식회사 유진테크 | 폴리실리콘 막의 성막 방법 |
JP6331634B2 (ja) * | 2014-04-17 | 2018-05-30 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP6418794B2 (ja) | 2014-06-09 | 2018-11-07 | 東京エレクトロン株式会社 | 改質処理方法及び半導体装置の製造方法 |
US9559023B2 (en) | 2014-06-23 | 2017-01-31 | Ultratech, Inc. | Systems and methods for reducing beam instability in laser annealing |
KR101604695B1 (ko) | 2014-09-19 | 2016-03-25 | 한국생산기술연구원 | 후면노광 기술을 이용한 미세패턴 보호 및 메탈레이어 증착방법 |
KR20160048301A (ko) * | 2014-10-23 | 2016-05-04 | 삼성전자주식회사 | 본딩 장치 및 그를 포함하는 기판 제조 설비 |
DE102015202575A1 (de) * | 2015-02-12 | 2016-08-18 | Robert Bosch Gmbh | Vorrichtung zum Bearbeiten eines Substrats |
KR101678987B1 (ko) * | 2015-06-09 | 2016-11-23 | 주식회사 이오테크닉스 | 포토마스크 수선 시스템 및 수선 방법 |
CN106234557A (zh) * | 2016-10-10 | 2016-12-21 | 成都沃特塞恩电子技术有限公司 | 一种射频功率源和射频解冻装置 |
US10641733B2 (en) * | 2017-03-20 | 2020-05-05 | National Technology & Engineering Solutions Of Sandia, Llc | Active mechanical-environmental-thermal MEMS device for nanoscale characterization |
EP3823812B1 (de) | 2018-07-17 | 2022-06-29 | IO Tech Group, Ltd. | Nivelliersystem für 3d-drucker |
KR102182471B1 (ko) * | 2019-01-11 | 2020-11-24 | 캐논 톡키 가부시키가이샤 | 성막장치 및 전자 디바이스 제조장치 |
JP2020188218A (ja) * | 2019-05-17 | 2020-11-19 | 東京エレクトロン株式会社 | 真空搬送装置 |
JP7303053B2 (ja) * | 2019-07-17 | 2023-07-04 | ファナック株式会社 | 調整補助具及びレーザ溶接装置 |
CN111217151B (zh) * | 2020-01-08 | 2021-09-17 | 上海向隆电子科技有限公司 | 楔型导光板的堆栈加工方法及其堆栈加工设备 |
CN112122778B (zh) * | 2020-09-24 | 2022-07-22 | 松山湖材料实验室 | 激光加工去除熔渣系统、方法、计算机设备及可读存储介质 |
KR20200133310A (ko) * | 2020-11-17 | 2020-11-27 | 캐논 톡키 가부시키가이샤 | 성막장치 및 전자 디바이스 제조장치 |
CN113953659B (zh) * | 2021-11-09 | 2022-06-24 | 西安电子科技大学 | 一种基于脉冲交替法的激光加工实时成像装置及方法 |
Family Cites Families (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2465241A1 (fr) * | 1979-09-10 | 1981-03-20 | Thomson Csf | Dispositif illuminateur destine a fournir un faisceau d'eclairement a distribution d'intensite ajustable et systeme de transfert de motifs comprenant un tel dispositif |
JPS57181537A (en) | 1981-05-01 | 1982-11-09 | Agency Of Ind Science & Technol | Light pattern projector |
JPH07118443B2 (ja) | 1984-05-18 | 1995-12-18 | ソニー株式会社 | 半導体装置の製法 |
JPH0197083A (ja) | 1987-10-09 | 1989-04-14 | Victor Co Of Japan Ltd | 文字放送信号再生装置 |
JPH0478123A (ja) * | 1990-07-20 | 1992-03-12 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH04100689A (ja) * | 1990-08-14 | 1992-04-02 | Tsubakimoto Chain Co | レーザ加工機用5軸テーブル |
US5160823A (en) * | 1991-01-03 | 1992-11-03 | Hutchinson Technology, Inc. | Moving mask laser imaging |
JPH05182923A (ja) | 1991-05-28 | 1993-07-23 | Semiconductor Energy Lab Co Ltd | レーザーアニール方法 |
JPH05129183A (ja) | 1991-06-20 | 1993-05-25 | Hitachi Ltd | パターン露光装置 |
JPH0521393A (ja) | 1991-07-11 | 1993-01-29 | Sony Corp | プラズマ処理装置 |
KR100269350B1 (ko) * | 1991-11-26 | 2000-10-16 | 구본준 | 박막트랜지스터의제조방법 |
JP3163693B2 (ja) | 1991-11-29 | 2001-05-08 | 日本電気株式会社 | 集積回路の製造方法 |
US5477304A (en) | 1992-10-22 | 1995-12-19 | Nikon Corporation | Projection exposure apparatus |
US5643801A (en) * | 1992-11-06 | 1997-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing method and alignment |
JP2840802B2 (ja) | 1992-12-04 | 1998-12-24 | 株式会社半導体エネルギー研究所 | 半導体材料の製造方法および製造装置 |
JP3282167B2 (ja) | 1993-02-01 | 2002-05-13 | 株式会社ニコン | 露光方法、走査型露光装置、及びデバイス製造方法 |
JP3296448B2 (ja) | 1993-03-15 | 2002-07-02 | 株式会社ニコン | 露光制御方法、走査露光方法、露光制御装置、及びデバイス製造方法 |
JPH06310407A (ja) | 1993-04-23 | 1994-11-04 | Hitachi Ltd | 投影露光装置の焦点合わせ装置 |
JPH0799321A (ja) | 1993-05-27 | 1995-04-11 | Sony Corp | 薄膜半導体素子の製造方法および製造装置 |
JP3316706B2 (ja) | 1993-06-25 | 2002-08-19 | 株式会社ニコン | 投影露光装置、及び該装置を用いる素子製造方法 |
US6122036A (en) * | 1993-10-21 | 2000-09-19 | Nikon Corporation | Projection exposure apparatus and method |
JP3398434B2 (ja) | 1993-10-27 | 2003-04-21 | 東洋ゴム工業株式会社 | トラック・バス用ラジアルタイヤ |
JP3118681B2 (ja) | 1993-10-29 | 2000-12-18 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
KR100299292B1 (ko) * | 1993-11-02 | 2001-12-01 | 이데이 노부유끼 | 다결정실리콘박막형성방법및그표면처리장치 |
JP2597464B2 (ja) * | 1994-03-29 | 1997-04-09 | 株式会社ジーティシー | レーザアニール装置 |
JPH07283110A (ja) | 1994-04-07 | 1995-10-27 | Nikon Corp | 走査露光装置 |
JPH07308788A (ja) * | 1994-05-16 | 1995-11-28 | Sanyo Electric Co Ltd | 光加工法及び光起電力装置の製造方法 |
JP3453223B2 (ja) | 1994-08-19 | 2003-10-06 | 東京エレクトロン株式会社 | 処理装置 |
JPH08192287A (ja) | 1995-01-17 | 1996-07-30 | Toshiba Corp | 露光用光源装置及びレーザ露光装置 |
JPH097911A (ja) | 1995-06-16 | 1997-01-10 | Sony Corp | 半導体製造装置 |
JPH0917729A (ja) | 1995-06-29 | 1997-01-17 | Sharp Corp | 半導体装置の製造方法 |
JP2674578B2 (ja) | 1995-08-29 | 1997-11-12 | 株式会社ニコン | 走査露光装置及び露光方法 |
JP3596188B2 (ja) | 1995-09-22 | 2004-12-02 | セイコーエプソン株式会社 | 薄膜トランジスタの製造方法 |
JPH09148246A (ja) | 1995-11-21 | 1997-06-06 | Ulvac Japan Ltd | 多結晶シリコンの形成方法及び形成装置 |
JP3870420B2 (ja) * | 1995-12-26 | 2007-01-17 | セイコーエプソン株式会社 | アクティブマトリクス基板の製造方法、エレクトロルミネッセンス装置の製造方法、表示装置の製造方法、及び電子機器の製造方法 |
JP4230538B2 (ja) * | 1996-01-04 | 2009-02-25 | ティーピーオー ホンコン ホールディング リミテッド | レーザビームを用いる電子デバイスの製造方法及びレーザ装置 |
JPH09283423A (ja) | 1996-04-09 | 1997-10-31 | Canon Inc | 露光装置及び露光方法 |
JPH1041513A (ja) | 1996-07-24 | 1998-02-13 | Toshiba Electron Eng Corp | 半導体素子の製造方法およびその装置 |
JPH1097083A (ja) | 1996-09-19 | 1998-04-14 | Nikon Corp | 投影露光方法及び投影露光装置 |
US5699191A (en) * | 1996-10-24 | 1997-12-16 | Xerox Corporation | Narrow-pitch beam homogenizer |
JPH10149984A (ja) | 1996-11-20 | 1998-06-02 | Ulvac Japan Ltd | 多結晶シリコンの形成方法及び形成装置 |
US5923475A (en) * | 1996-11-27 | 1999-07-13 | Eastman Kodak Company | Laser printer using a fly's eye integrator |
JP3917698B2 (ja) * | 1996-12-12 | 2007-05-23 | 株式会社半導体エネルギー研究所 | レーザーアニール方法およびレーザーアニール装置 |
JPH10209029A (ja) | 1997-01-21 | 1998-08-07 | Nikon Corp | アライメント系を備える露光装置 |
JPH10230381A (ja) * | 1997-02-21 | 1998-09-02 | Nikon Corp | 加工装置 |
JP4056577B2 (ja) * | 1997-02-28 | 2008-03-05 | 株式会社半導体エネルギー研究所 | レーザー照射方法 |
JP4059952B2 (ja) * | 1997-03-27 | 2008-03-12 | 株式会社半導体エネルギー研究所 | レーザー光照射方法 |
JP4086932B2 (ja) * | 1997-04-17 | 2008-05-14 | 株式会社半導体エネルギー研究所 | レーザー照射装置及びレーザー処理方法 |
JPH1117185A (ja) | 1997-06-20 | 1999-01-22 | Hitachi Ltd | 液晶表示装置及びその製造方法 |
JP3642546B2 (ja) * | 1997-08-12 | 2005-04-27 | 株式会社東芝 | 多結晶半導体薄膜の製造方法 |
TW408246B (en) * | 1997-09-12 | 2000-10-11 | Sanyo Electric Co | Semiconductor device and display device having laser-annealed semiconductor element |
JP3466893B2 (ja) | 1997-11-10 | 2003-11-17 | キヤノン株式会社 | 位置合わせ装置及びそれを用いた投影露光装置 |
JPH11186189A (ja) * | 1997-12-17 | 1999-07-09 | Semiconductor Energy Lab Co Ltd | レーザー照射装置 |
US6072631A (en) * | 1998-07-09 | 2000-06-06 | 3M Innovative Properties Company | Diffractive homogenizer with compensation for spatial coherence |
US6792326B1 (en) * | 1999-05-24 | 2004-09-14 | Potomac Photonics, Inc. | Material delivery system for miniature structure fabrication |
US6531681B1 (en) * | 2000-03-27 | 2003-03-11 | Ultratech Stepper, Inc. | Apparatus having line source of radiant energy for exposing a substrate |
SG113399A1 (en) * | 2000-12-27 | 2005-08-29 | Semiconductor Energy Lab | Laser annealing method and semiconductor device fabricating method |
DE20205302U1 (de) * | 2002-04-05 | 2002-06-27 | Imko Intelligente Micromodule | Vorrichtung zur Ermittlung der Materialfeuchte eines Mediums |
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1999
- 1999-07-08 JP JP11194024A patent/JP2001023918A/ja active Pending
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2000
- 2000-07-07 TW TW089113516A patent/TW479367B/zh not_active IP Right Cessation
- 2000-07-07 US US09/612,551 patent/US6861614B1/en not_active Expired - Fee Related
- 2000-07-07 KR KR10-2000-0038851A patent/KR100499961B1/ko not_active IP Right Cessation
- 2000-07-08 DE DE60041166T patent/DE60041166D1/de not_active Expired - Fee Related
- 2000-07-08 EP EP08075745A patent/EP1998364A3/de not_active Withdrawn
- 2000-07-08 EP EP00250226A patent/EP1067593B1/de not_active Expired - Lifetime
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2003
- 2003-04-21 KR KR10-2003-0025118A patent/KR100437920B1/ko not_active IP Right Cessation
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2004
- 2004-12-23 US US11/021,306 patent/US7312418B2/en not_active Expired - Fee Related
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2007
- 2007-02-23 US US11/678,527 patent/US20070166945A1/en not_active Abandoned
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EP1998364A3 (de) | 2009-02-11 |
EP1067593A3 (de) | 2007-03-21 |
EP1067593B1 (de) | 2008-12-24 |
KR100499961B1 (ko) | 2005-07-11 |
EP1067593A2 (de) | 2001-01-10 |
KR100437920B1 (ko) | 2004-06-30 |
KR20030044947A (ko) | 2003-06-09 |
US20050109743A1 (en) | 2005-05-26 |
US7312418B2 (en) | 2007-12-25 |
US20070166945A1 (en) | 2007-07-19 |
EP1998364A2 (de) | 2008-12-03 |
TW479367B (en) | 2002-03-11 |
KR20010029904A (ko) | 2001-04-16 |
JP2001023918A (ja) | 2001-01-26 |
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