DE69937739D1 - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- DE69937739D1 DE69937739D1 DE69937739T DE69937739T DE69937739D1 DE 69937739 D1 DE69937739 D1 DE 69937739D1 DE 69937739 T DE69937739 T DE 69937739T DE 69937739 T DE69937739 T DE 69937739T DE 69937739 D1 DE69937739 D1 DE 69937739D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1999/002417 WO2000068992A1 (en) | 1999-05-11 | 1999-05-11 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69937739D1 true DE69937739D1 (de) | 2008-01-24 |
DE69937739T2 DE69937739T2 (de) | 2008-11-27 |
Family
ID=14235649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69937739T Expired - Lifetime DE69937739T2 (de) | 1999-05-11 | 1999-05-11 | Halbleitervorrichtung |
Country Status (5)
Country | Link |
---|---|
US (1) | US6369411B2 (de) |
EP (1) | EP1104025B1 (de) |
JP (1) | JP3610015B2 (de) |
DE (1) | DE69937739T2 (de) |
WO (1) | WO2000068992A1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4540884B2 (ja) * | 2001-06-19 | 2010-09-08 | 三菱電機株式会社 | 半導体装置 |
JP2003264265A (ja) * | 2002-03-08 | 2003-09-19 | Mitsubishi Electric Corp | 電力用半導体装置 |
JP3910497B2 (ja) * | 2002-07-03 | 2007-04-25 | 株式会社オートネットワーク技術研究所 | 電力回路部の防水方法及び電力回路部をもつパワーモジュール |
JP2004228352A (ja) * | 2003-01-23 | 2004-08-12 | Mitsubishi Electric Corp | 電力半導体装置 |
JP3858834B2 (ja) * | 2003-02-24 | 2006-12-20 | オンキヨー株式会社 | 半導体素子の放熱器 |
DE102004042367B4 (de) | 2004-09-01 | 2008-07-10 | Infineon Technologies Ag | Leistungshalbleitermodul |
DE102005002813B4 (de) * | 2005-01-20 | 2006-10-19 | Robert Bosch Gmbh | Steuermodul |
US20100301349A1 (en) * | 2005-01-26 | 2010-12-02 | Harvatek Corporation | Wafer level led package structure for increasing light-emitting efficiency and heat-dissipating effect and method for manufacturing the same |
US20060258031A1 (en) * | 2005-01-26 | 2006-11-16 | Bily Wang | Wafer-level electro-optical semiconductor manufacture fabrication method |
DE102005046404B4 (de) * | 2005-09-28 | 2008-12-24 | Infineon Technologies Ag | Verfahren zur Minderung von Streuungen in der Durchbiegung von gewalzten Bodenplatten und Leistungshalbleitermodul mit einer nach diesem Verfahren hergestellten Bodenplatte |
JP2008060204A (ja) * | 2006-08-30 | 2008-03-13 | Nec Lcd Technologies Ltd | Ledバックライトユニットおよびそれを用いた液晶表示装置 |
DE102006046789A1 (de) * | 2006-10-02 | 2008-04-03 | Infineon Technologies Ag | Elektronisches Bauteil und Verfahren zur Herstellung elektronischer Bauteile |
JP5252819B2 (ja) * | 2007-03-26 | 2013-07-31 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP5061717B2 (ja) * | 2007-05-18 | 2012-10-31 | 富士電機株式会社 | 半導体モジュール及び半導体モジュールの製造方法 |
US8651704B1 (en) | 2008-12-05 | 2014-02-18 | Musco Corporation | Solid state light fixture with cooling system with heat rejection management |
US8535989B2 (en) | 2010-04-02 | 2013-09-17 | Intel Corporation | Embedded semiconductive chips in reconstituted wafers, and systems containing same |
US9068707B1 (en) | 2010-04-06 | 2015-06-30 | Musco Corporation | Compact LED light source and lighting system |
JP5260592B2 (ja) * | 2010-04-08 | 2013-08-14 | デクセリアルズ株式会社 | 保護素子、バッテリ制御装置、及びバッテリパック |
JP5467933B2 (ja) | 2010-05-21 | 2014-04-09 | 株式会社東芝 | 半導体装置 |
CN104335472A (zh) * | 2012-05-28 | 2015-02-04 | 三菱电机株式会社 | 半导体装置 |
JP5939041B2 (ja) * | 2012-06-01 | 2016-06-22 | 住友電気工業株式会社 | 半導体モジュール及び半導体モジュールの製造方法 |
CN104321864B (zh) * | 2012-06-08 | 2017-06-20 | 英特尔公司 | 具有非共面的、包封的微电子器件和无焊内建层的微电子封装 |
JP2014033092A (ja) * | 2012-08-03 | 2014-02-20 | Mitsubishi Electric Corp | 半導体装置および半導体装置の製造方法 |
JP2014056982A (ja) * | 2012-09-13 | 2014-03-27 | Mitsubishi Electric Corp | パワー半導体装置およびその製造方法 |
US9196510B2 (en) * | 2013-11-12 | 2015-11-24 | Infineon Technologies Ag | Semiconductor package comprising two semiconductor modules and laterally extending connectors |
KR101983160B1 (ko) * | 2013-11-29 | 2019-05-28 | 삼성전기주식회사 | 전력반도체 모듈 |
DE112016007485T5 (de) | 2016-11-29 | 2019-08-22 | Mitsubishi Electric Corporation | Halbleitervorrichtung, Steuervorrichtung, und Verfahren zur Herstellung der Halbleitervorrichtung |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1815799C3 (de) * | 1968-12-19 | 1979-09-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Anordnung eines Halbleiterbauelementgehäuses |
US5014159A (en) * | 1982-04-19 | 1991-05-07 | Olin Corporation | Semiconductor package |
JPH04273451A (ja) * | 1991-02-28 | 1992-09-29 | Nippon Steel Corp | 半導体装置 |
JPH05166962A (ja) * | 1991-12-17 | 1993-07-02 | Oki Electric Ind Co Ltd | 電力増幅器の実装構造 |
JP2725952B2 (ja) * | 1992-06-30 | 1998-03-11 | 三菱電機株式会社 | 半導体パワーモジュール |
JP2854785B2 (ja) * | 1993-08-30 | 1999-02-03 | 三菱電機株式会社 | 半導体装置およびその製造方法 |
JP3357220B2 (ja) | 1995-07-07 | 2002-12-16 | 三菱電機株式会社 | 半導体装置 |
JPH09172116A (ja) | 1995-12-21 | 1997-06-30 | Mitsubishi Electric Corp | 半導体装置 |
JPH09213878A (ja) * | 1996-01-29 | 1997-08-15 | Toshiba Corp | 半導体装置 |
JP2967065B2 (ja) * | 1996-09-20 | 1999-10-25 | 株式会社東芝 | 半導体モジュール |
-
1999
- 1999-05-11 EP EP99918362A patent/EP1104025B1/de not_active Expired - Lifetime
- 1999-05-11 DE DE69937739T patent/DE69937739T2/de not_active Expired - Lifetime
- 1999-05-11 JP JP2000617493A patent/JP3610015B2/ja not_active Expired - Lifetime
- 1999-05-11 WO PCT/JP1999/002417 patent/WO2000068992A1/ja active IP Right Grant
-
2001
- 2001-01-11 US US09/757,630 patent/US6369411B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1104025A1 (de) | 2001-05-30 |
WO2000068992A1 (en) | 2000-11-16 |
US6369411B2 (en) | 2002-04-09 |
JP3610015B2 (ja) | 2005-01-12 |
EP1104025A4 (de) | 2007-05-02 |
DE69937739T2 (de) | 2008-11-27 |
US20010002051A1 (en) | 2001-05-31 |
EP1104025B1 (de) | 2007-12-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |