DE60006892D1 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE60006892D1
DE60006892D1 DE60006892T DE60006892T DE60006892D1 DE 60006892 D1 DE60006892 D1 DE 60006892D1 DE 60006892 T DE60006892 T DE 60006892T DE 60006892 T DE60006892 T DE 60006892T DE 60006892 D1 DE60006892 D1 DE 60006892D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60006892T
Other languages
English (en)
Other versions
DE60006892T2 (de
Inventor
Yasuhiko Honda
Hideo Kato
Hidetoshi Saito
Masao Kuriyama
Tokumasa Hara
Takafumi Ikeda
Tatsuya Hiramatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE60006892D1 publication Critical patent/DE60006892D1/de
Application granted granted Critical
Publication of DE60006892T2 publication Critical patent/DE60006892T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/025—Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/22—Nonvolatile memory in which reading can be carried out from one memory bank or array whilst a word or sector in another bank or array is being erased or programmed simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE60006892T 1999-05-10 2000-05-08 Halbleiteranordnung Expired - Lifetime DE60006892T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP12932199 1999-05-10
JP12932199 1999-05-10
JP2000065397 2000-03-09
JP2000065397 2000-03-09

Publications (2)

Publication Number Publication Date
DE60006892D1 true DE60006892D1 (de) 2004-01-15
DE60006892T2 DE60006892T2 (de) 2004-10-28

Family

ID=26464750

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60006892T Expired - Lifetime DE60006892T2 (de) 1999-05-10 2000-05-08 Halbleiteranordnung

Country Status (5)

Country Link
US (6) US6377502B1 (de)
EP (1) EP1052647B1 (de)
JP (1) JP2010182395A (de)
KR (3) KR100590140B1 (de)
DE (1) DE60006892T2 (de)

Families Citing this family (91)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7187572B2 (en) * 2002-06-28 2007-03-06 Rambus Inc. Early read after write operation memory device, system and method
JP4149637B2 (ja) * 2000-05-25 2008-09-10 株式会社東芝 半導体装置
JP4467728B2 (ja) * 2000-07-28 2010-05-26 富士通マイクロエレクトロニクス株式会社 半導体記憶装置
JP3998908B2 (ja) * 2000-10-23 2007-10-31 松下電器産業株式会社 不揮発性メモリ装置
JP2002133885A (ja) * 2000-10-30 2002-05-10 Toshiba Corp 不揮発性半導体記憶装置
US6549467B2 (en) * 2001-03-09 2003-04-15 Micron Technology, Inc. Non-volatile memory device with erase address register
US6552935B2 (en) * 2001-08-02 2003-04-22 Stmicroelectronics, Inc. Dual bank flash memory device and method
US6782446B2 (en) * 2001-08-22 2004-08-24 Intel Corporation Method to prevent corruption of page tables during flash EEPROM programming
JP4127605B2 (ja) * 2001-09-07 2008-07-30 株式会社東芝 半導体記憶装置
US6741502B1 (en) * 2001-09-17 2004-05-25 Sandisk Corporation Background operation for memory cells
JP2003123488A (ja) * 2001-10-11 2003-04-25 Toshiba Corp 半導体記憶装置
US6870770B2 (en) * 2001-12-12 2005-03-22 Micron Technology, Inc. Method and architecture to calibrate read operations in synchronous flash memory
EP1327992B1 (de) * 2002-01-11 2005-03-30 STMicroelectronics S.r.l. Architektur eines Flash-EEPROMs, der gleichzeitig während des Löschens oder Programmierens von einem oder mehreren anderen Sektoren, lesbar ist.
JP2003257189A (ja) * 2002-03-01 2003-09-12 Toshiba Corp 半導体記憶装置
JP2003263892A (ja) * 2002-03-11 2003-09-19 Toshiba Corp 半導体記憶装置
KR100481857B1 (ko) * 2002-08-14 2005-04-11 삼성전자주식회사 레이아웃 면적을 줄이고 뱅크 마다 독립적인 동작을수행할 수 있는 디코더를 갖는 플레쉬 메모리 장치
US6965527B2 (en) * 2002-11-27 2005-11-15 Matrix Semiconductor, Inc Multibank memory on a die
US7660181B2 (en) * 2002-12-19 2010-02-09 Sandisk 3D Llc Method of making non-volatile memory cell with embedded antifuse
US8008700B2 (en) * 2002-12-19 2011-08-30 Sandisk 3D Llc Non-volatile memory cell with embedded antifuse
US7800933B2 (en) * 2005-09-28 2010-09-21 Sandisk 3D Llc Method for using a memory cell comprising switchable semiconductor memory element with trimmable resistance
US7800932B2 (en) 2005-09-28 2010-09-21 Sandisk 3D Llc Memory cell comprising switchable semiconductor memory element with trimmable resistance
US20070164388A1 (en) * 2002-12-19 2007-07-19 Sandisk 3D Llc Memory cell comprising a diode fabricated in a low resistivity, programmed state
US7618850B2 (en) * 2002-12-19 2009-11-17 Sandisk 3D Llc Method of making a diode read/write memory cell in a programmed state
US7685451B2 (en) * 2002-12-20 2010-03-23 Intel Corporation Method and apparatus to limit current-change induced voltage changes in a microcircuit
US20050185465A1 (en) * 2003-03-11 2005-08-25 Fujitsu Limited Memory device
JP4010513B2 (ja) * 2003-04-17 2007-11-21 スパンション エルエルシー 不揮発性半導体記憶装置
FR2859813B1 (fr) 2003-09-15 2005-12-23 Atmel Corp Architecture eeprom et protocole de programmation
JP2005092963A (ja) * 2003-09-16 2005-04-07 Renesas Technology Corp 不揮発性記憶装置
US8233322B2 (en) * 2003-10-10 2012-07-31 Micron Technology, Inc. Multi-partition memory with separated read and algorithm datalines
US7212462B1 (en) * 2003-11-04 2007-05-01 Xilinx, Inc. Structure and method for suppressing sub-threshold leakage in integrated circuits
US6903994B1 (en) * 2003-11-14 2005-06-07 Micron Technology, Inc. Device, system and method for reducing power in a memory device during standby modes
EP1542234A3 (de) * 2003-12-12 2008-08-27 STMicroelectronics S.A. Verfahren zur Entwicklung einer erweiteren Speichermatrix aus mehreren seriellen Speichern
WO2005093760A1 (ja) * 2004-03-26 2005-10-06 Spansion Llc 半導体装置および半導体装置にデータを書き込む方法
KR100587076B1 (ko) * 2004-04-28 2006-06-08 주식회사 하이닉스반도체 메모리 장치
US7009889B2 (en) 2004-05-28 2006-03-07 Sandisk Corporation Comprehensive erase verification for non-volatile memory
JP4582551B2 (ja) * 2004-09-30 2010-11-17 スパンション エルエルシー 半導体装置およびデータ書き込み方法
KR100557712B1 (ko) * 2004-11-10 2006-03-07 삼성전자주식회사 반도체 메모리의 리페어 방법 및 장치
US7359279B2 (en) * 2005-03-31 2008-04-15 Sandisk 3D Llc Integrated circuit memory array configuration including decoding compatibility with partial implementation of multiple memory layers
JP4772363B2 (ja) * 2005-04-12 2011-09-14 株式会社東芝 不揮発性半導体記憶装置
WO2007023544A1 (ja) 2005-08-25 2007-03-01 Spansion Llc 記憶装置、記憶装置の制御方法、および記憶制御装置の制御方法
TWI543185B (zh) 2005-09-30 2016-07-21 考文森智財管理公司 具有輸出控制之記憶體及其系統
US20070076502A1 (en) 2005-09-30 2007-04-05 Pyeon Hong B Daisy chain cascading devices
US7652922B2 (en) 2005-09-30 2010-01-26 Mosaid Technologies Incorporated Multiple independent serial link memory
JP2007164893A (ja) * 2005-12-13 2007-06-28 Toshiba Corp 半導体記憶装置
JP2007193928A (ja) * 2005-12-19 2007-08-02 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7487287B2 (en) * 2006-02-08 2009-02-03 Atmel Corporation Time efficient embedded EEPROM/processor control method
JP4843336B2 (ja) * 2006-03-06 2011-12-21 株式会社東芝 不揮発性半導体記憶装置
JP4693656B2 (ja) * 2006-03-06 2011-06-01 株式会社東芝 不揮発性半導体記憶装置
US7586795B2 (en) 2006-03-20 2009-09-08 Cypress Semiconductor Corporation Variable reference voltage circuit for non-volatile memory
WO2008010258A1 (fr) * 2006-07-18 2008-01-24 Spansion Llc Dispositif de stockage non volatil et son procédé de commande d'effacement
JP2008103033A (ja) * 2006-10-19 2008-05-01 Toshiba Corp 半導体記憶装置及びこれにおける電力供給方法
KR20080040425A (ko) 2006-11-03 2008-05-08 삼성전자주식회사 멀티 섹터 소거 동작 도중에 데이터를 독출할 수 있는불휘발성 메모리 장치 및 데이터 독출 방법
JP4936914B2 (ja) * 2007-01-23 2012-05-23 株式会社東芝 半導体記憶装置
JP5159127B2 (ja) * 2007-03-14 2013-03-06 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US7696804B2 (en) * 2007-03-31 2010-04-13 Sandisk 3D Llc Method for incorporating transistor snap-back protection in a level shifter circuit
US7696805B2 (en) * 2007-03-31 2010-04-13 Sandisk 3D Llc Level shifter circuit incorporating transistor snap-back protection
US7800402B1 (en) * 2007-11-05 2010-09-21 Altera Corporation Look-up table overdrive circuits
KR20090084236A (ko) * 2008-01-31 2009-08-05 삼성전자주식회사 메모리 칩 어레이
US7830698B2 (en) * 2008-04-11 2010-11-09 Sandisk 3D Llc Multilevel nonvolatile memory device containing a carbon storage material and methods of making and using same
US7812335B2 (en) * 2008-04-11 2010-10-12 Sandisk 3D Llc Sidewall structured switchable resistor cell
US8762621B2 (en) * 2008-10-28 2014-06-24 Micron Technology, Inc. Logical unit operation
US8645617B2 (en) * 2008-12-09 2014-02-04 Rambus Inc. Memory device for concurrent and pipelined memory operations
KR20100091640A (ko) * 2009-02-11 2010-08-19 삼성전자주식회사 메모리 장치, 이를 포함하는 메모리 시스템, 및 이들의 데이터 처리 방법
JP2010198698A (ja) * 2009-02-26 2010-09-09 Toshiba Corp 不揮発性半導体メモリ
JP5314478B2 (ja) * 2009-03-31 2013-10-16 株式会社ジャパンディスプレイ 表示装置
JP2010257530A (ja) * 2009-04-24 2010-11-11 Toshiba Corp 半導体集積回路装置
JP2010257528A (ja) * 2009-04-24 2010-11-11 Toshiba Corp 半導体集積回路装置
JP2011146102A (ja) * 2010-01-15 2011-07-28 Elpida Memory Inc 半導体装置及びデータ処理システム
KR101061313B1 (ko) 2010-01-28 2011-08-31 주식회사 하이닉스반도체 보안 제어장치를 포함하는 반도체 메모리 장치
US8400822B2 (en) 2010-03-22 2013-03-19 Qualcomm Incorporated Multi-port non-volatile memory that includes a resistive memory element
JP2012079377A (ja) * 2010-09-30 2012-04-19 Toshiba Corp 半導体記憶装置
JP5023208B2 (ja) * 2010-12-17 2012-09-12 株式会社東芝 半導体記憶装置及びそのテスト方法
KR101736454B1 (ko) 2010-12-30 2017-05-29 삼성전자주식회사 불휘발성 메모리 장치
WO2012168954A1 (en) * 2011-06-10 2012-12-13 Micron Technology Inc. Apparatus and methods to perform read-while write (rww) operations
JP5845140B2 (ja) * 2011-06-29 2016-01-20 キヤノン株式会社 撮像素子及び撮像装置
JP6275478B2 (ja) * 2013-12-26 2018-02-07 ラピスセミコンダクタ株式会社 電源装置、電源装置の制御方法、及び電源装置を含む通信装置
JP5888387B1 (ja) * 2014-10-22 2016-03-22 ミツミ電機株式会社 電池保護回路及び電池保護装置、並びに電池パック
US9361991B1 (en) * 2014-12-23 2016-06-07 Sandisk Technologies Inc. Efficient scanning of nonvolatile memory blocks
US9627016B2 (en) * 2015-09-10 2017-04-18 Cypress Semiconductor Corporation Systems, methods, and devices for parallel read and write operations
KR20170060739A (ko) * 2015-11-25 2017-06-02 삼성전자주식회사 반도체 메모리 장치 및 이를 포함하는 메모리 시스템
KR102365003B1 (ko) * 2016-07-25 2022-02-18 매그나칩 반도체 유한회사 Otp 메모리 장치
US9806256B1 (en) 2016-10-21 2017-10-31 Sandisk Technologies Llc Resistive memory device having sidewall spacer electrode and method of making thereof
US11593262B1 (en) * 2018-04-25 2023-02-28 Seagate Technology Llc Garbage collection command scheduling
US11056155B1 (en) * 2018-06-20 2021-07-06 Adesto Technologies Corporation Nonvolatile memory devices, systems and methods with switching charge pump architectures
CN111128281B (zh) * 2018-10-31 2024-06-21 长鑫存储技术有限公司 集成电路结构和存储器
US10748618B2 (en) * 2018-11-26 2020-08-18 Wuhan Xinxin Semiconductor Manufacturing Co., Ltd. Local X-decoder and related memory system with a voltage clamping transistor
KR102157671B1 (ko) 2019-03-14 2020-09-18 연세대학교 산학협력단 단일 비트 라인을 이용하는 메모리 장치 및 그 제어 방법
JP7312141B2 (ja) 2020-05-25 2023-07-20 ルネサスエレクトロニクス株式会社 半導体装置
US11164610B1 (en) * 2020-06-05 2021-11-02 Qualcomm Incorporated Memory device with built-in flexible double redundancy
KR20220019572A (ko) 2020-08-10 2022-02-17 에스케이하이닉스 주식회사 머지드 버퍼 및 이를 포함하는 메모리 장치
DE102021107045A1 (de) 2021-03-10 2022-09-15 Elmos Semiconductor Se Rechnersystem für eine Motorsteuerung mit einem Programmspeicher und einem Datenspeicher

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS618785A (ja) * 1984-06-21 1986-01-16 Fujitsu Ltd 記憶装置アクセス制御方式
US4744062A (en) * 1985-04-23 1988-05-10 Hitachi, Ltd. Semiconductor integrated circuit with nonvolatile memory
EP0617363B1 (de) 1989-04-13 2000-01-26 SanDisk Corporation Austausch von fehlerhaften Speicherzellen einer EEprommatritze
JPH04362597A (ja) * 1991-06-10 1992-12-15 Nec Ic Microcomput Syst Ltd 電流センスアンプ回路
JP2839819B2 (ja) * 1993-05-28 1998-12-16 株式会社東芝 不揮発性半導体記憶装置
US5477499A (en) * 1993-10-13 1995-12-19 Advanced Micro Devices, Inc. Memory architecture for a three volt flash EEPROM
JPH08180697A (ja) * 1994-09-16 1996-07-12 Texas Instr Inc <Ti> センス増幅器用の基準電流を供給する基準回路及び方法
US5546349A (en) * 1995-03-13 1996-08-13 Kabushiki Kaisha Toshiba Exchangeable hierarchical data line structure
EP0740307B1 (de) * 1995-04-28 2001-12-12 STMicroelectronics S.r.l. Leseverstärkerschaltung für Halbleiterspeicheranordnungen
EP0745995B1 (de) * 1995-05-05 2001-04-11 STMicroelectronics S.r.l. Anordnung von nichtflüchtigen EEPROM,insbesondere Flash-EEPROM
JPH09306187A (ja) * 1996-05-10 1997-11-28 Nec Corp 不揮発性半導体記憶装置
US5798968A (en) * 1996-09-24 1998-08-25 Sandisk Corporation Plane decode/virtual sector architecture
US5867430A (en) 1996-12-20 1999-02-02 Advanced Micro Devices Inc Bank architecture for a non-volatile memory enabling simultaneous reading and writing
US5847998A (en) 1996-12-20 1998-12-08 Advanced Micro Devices, Inc. Non-volatile memory array that enables simultaneous read and write operations
JPH10334662A (ja) * 1997-05-29 1998-12-18 Nec Corp 半導体記憶装置
JP3570879B2 (ja) * 1997-07-09 2004-09-29 富士通株式会社 不揮発性半導体記憶装置
US5963465A (en) * 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US6016270A (en) * 1998-03-06 2000-01-18 Alliance Semiconductor Corporation Flash memory architecture that utilizes a time-shared address bus scheme and separate memory cell access paths for simultaneous read/write operations
US5963485A (en) 1998-08-19 1999-10-05 Stmicroelectronics, Inc. Method and apparatus for bit line recovery in dynamic random access memory
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
JP2000173266A (ja) * 1998-12-07 2000-06-23 Mitsubishi Electric Corp 昇圧回路
JP3940513B2 (ja) * 1999-01-11 2007-07-04 株式会社東芝 半導体記憶装置
US6240040B1 (en) * 2000-03-15 2001-05-29 Advanced Micro Devices, Inc. Multiple bank simultaneous operation for a flash memory

Also Published As

Publication number Publication date
US20060256616A1 (en) 2006-11-16
KR20050098798A (ko) 2005-10-12
US7126855B2 (en) 2006-10-24
EP1052647A3 (de) 2000-12-13
KR100636061B1 (ko) 2006-10-20
US20020031038A1 (en) 2002-03-14
US6377502B1 (en) 2002-04-23
EP1052647B1 (de) 2003-12-03
US20040218437A1 (en) 2004-11-04
US20030086295A1 (en) 2003-05-08
US6829194B2 (en) 2004-12-07
KR20050098797A (ko) 2005-10-12
US20050207247A1 (en) 2005-09-22
US7345919B2 (en) 2008-03-18
US6920057B2 (en) 2005-07-19
DE60006892T2 (de) 2004-10-28
KR20010082502A (ko) 2001-08-30
US6512693B2 (en) 2003-01-28
KR100561567B1 (ko) 2006-03-17
JP2010182395A (ja) 2010-08-19
KR100590140B1 (ko) 2006-06-15
EP1052647A2 (de) 2000-11-15

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