DE69941921D1 - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
DE69941921D1
DE69941921D1 DE69941921T DE69941921T DE69941921D1 DE 69941921 D1 DE69941921 D1 DE 69941921D1 DE 69941921 T DE69941921 T DE 69941921T DE 69941921 T DE69941921 T DE 69941921T DE 69941921 D1 DE69941921 D1 DE 69941921D1
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69941921T
Other languages
English (en)
Inventor
Masaaki Yuri
Osamu Imafuji
Shinji Nakamura
Kenji Orita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Application granted granted Critical
Publication of DE69941921D1 publication Critical patent/DE69941921D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69941921T 1998-11-06 1999-11-04 Halbleitervorrichtung Expired - Lifetime DE69941921D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31586298 1998-11-06

Publications (1)

Publication Number Publication Date
DE69941921D1 true DE69941921D1 (de) 2010-03-04

Family

ID=18070495

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69941921T Expired - Lifetime DE69941921D1 (de) 1998-11-06 1999-11-04 Halbleitervorrichtung

Country Status (4)

Country Link
US (1) US6150674A (de)
EP (1) EP1003227B1 (de)
DE (1) DE69941921D1 (de)
TW (1) TW453004B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6953977B2 (en) * 2000-02-08 2005-10-11 Boston Microsystems, Inc. Micromechanical piezoelectric device
US6627965B1 (en) 2000-02-08 2003-09-30 Boston Microsystems, Inc. Micromechanical device with an epitaxial layer
JP2002016311A (ja) * 2000-06-27 2002-01-18 Sharp Corp 窒化ガリウム系発光素子
CN1300901C (zh) * 2001-10-26 2007-02-14 波兰商艾蒙诺公司 使用氮化物块状单晶层的发光元件结构
EP2261989B1 (de) 2002-04-30 2014-07-16 Cree, Inc. Hochspannungsschaltungsvorrichtung und Herstellungsverfahren dafür
US20060138431A1 (en) 2002-05-17 2006-06-29 Robert Dwilinski Light emitting device structure having nitride bulk single crystal layer
US7112830B2 (en) * 2002-11-25 2006-09-26 Apa Enterprises, Inc. Super lattice modification of overlying transistor
EP1576210B1 (de) * 2002-12-11 2010-02-10 AMMONO Sp. z o.o. Substrat für epitaxie und verfahren zu seiner herstellung
KR100848380B1 (ko) * 2004-06-11 2008-07-25 암모노 에스피. 제트오. 오. 갈륨 함유 질화물의 벌크 단결정 및 그의 어플리케이션
PL371405A1 (pl) * 2004-11-26 2006-05-29 Ammono Sp.Z O.O. Sposób wytwarzania objętościowych monokryształów metodą wzrostu na zarodku
JP2007080896A (ja) * 2005-09-12 2007-03-29 Sanyo Electric Co Ltd 半導体素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0377940B1 (de) * 1989-01-13 1994-11-17 Kabushiki Kaisha Toshiba Verbindungshalbleiter, denselben anwendendes Halbleiter-Bauelement und Herstellungsverfahren des Halbleiter-Bauelementes
JP3160914B2 (ja) * 1990-12-26 2001-04-25 豊田合成株式会社 窒化ガリウム系化合物半導体レーザダイオード
EP0647730B1 (de) * 1993-10-08 2002-09-11 Mitsubishi Cable Industries, Ltd. GaN-Einkristall
JPH10173228A (ja) * 1996-12-09 1998-06-26 Ricoh Co Ltd 化合物半導体基板および半導体発光素子
JP3292083B2 (ja) * 1997-03-11 2002-06-17 日亜化学工業株式会社 窒化物半導体基板の製造方法及び窒化物半導体素子の製造方法

Also Published As

Publication number Publication date
EP1003227A2 (de) 2000-05-24
TW453004B (en) 2001-09-01
EP1003227A3 (de) 2000-08-30
US6150674A (en) 2000-11-21
EP1003227B1 (de) 2010-01-13

Similar Documents

Publication Publication Date Title
DE19823069B8 (de) Halbleiterbauelement
DE69942813D1 (de) Halbleitervorrichtung
DE69935182D1 (de) Halbleiteranordnung
DE69942499D1 (de) Reflektierende Halbleitervorrichtung
DE69637769D1 (de) Halbleitervorrichtung
DE69738008D1 (de) Halbleiterbauelement
DE69739242D1 (de) Halbleitervorrichtung
FI990534A (fi) CT-kuvauslaite
DE69727373D1 (de) Halbleitervorrichtung
DE69908312D1 (de) Durchführungseinrichtung
DE69637698D1 (de) Halbleitervorrichtung
DE69937739D1 (de) Halbleitervorrichtung
DE69912565D1 (de) Halbleiteranordnung
DE69940029D1 (de) Halbleiterbauelement
DE69637809D1 (de) Halbleiteranordnung
DE19980453T1 (de) Halbleiterbauelement-Testgerät
DE69920653D1 (de) Halbleiterlaservorrichtung
DE69737320D1 (de) Halbleitervorrichtung
DE69941201D1 (de) Hochfrequenz-Halbleiteranordnung
DE60005959D1 (de) Halbleiteranordnung
DE69839597D1 (de) Hochfrequenzhalbleiteranordnung
NO992660D0 (no) Tilbakeholdelsesanordning
DE69923374D1 (de) Halbleiteranordnung
DE59914216D1 (de) Prüfsonde-Antriebsvorrichtung
DE69938418D1 (de) Graben-gate-halbleiteranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition