DE69938418D1 - Graben-gate-halbleiteranordnung - Google Patents

Graben-gate-halbleiteranordnung

Info

Publication number
DE69938418D1
DE69938418D1 DE69938418T DE69938418T DE69938418D1 DE 69938418 D1 DE69938418 D1 DE 69938418D1 DE 69938418 T DE69938418 T DE 69938418T DE 69938418 T DE69938418 T DE 69938418T DE 69938418 D1 DE69938418 D1 DE 69938418D1
Authority
DE
Germany
Prior art keywords
trench
semiconductor device
gate semiconductor
gate
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69938418T
Other languages
English (en)
Other versions
DE69938418T2 (de
Inventor
Eddie Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
NXP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NXP BV filed Critical NXP BV
Application granted granted Critical
Publication of DE69938418D1 publication Critical patent/DE69938418D1/de
Publication of DE69938418T2 publication Critical patent/DE69938418T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT
    • H01L29/7396—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions
    • H01L29/7397—Vertical transistors, e.g. vertical IGBT with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions and a gate structure lying on a slanted or vertical surface or formed in a groove, e.g. trench gate IGBT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69938418T 1998-08-14 1999-08-03 Graben-gate-halbleiteranordnung Expired - Lifetime DE69938418T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9817643.1A GB9817643D0 (en) 1998-08-14 1998-08-14 Trench-gate semiconductor device
GB9817643 1998-08-14
PCT/EP1999/005590 WO2000010204A1 (en) 1998-08-14 1999-08-03 Trench-gate semiconductor device

Publications (2)

Publication Number Publication Date
DE69938418D1 true DE69938418D1 (de) 2008-05-08
DE69938418T2 DE69938418T2 (de) 2009-04-09

Family

ID=10837198

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69938418T Expired - Lifetime DE69938418T2 (de) 1998-08-14 1999-08-03 Graben-gate-halbleiteranordnung

Country Status (6)

Country Link
US (1) US6255692B1 (de)
EP (1) EP1044474B1 (de)
JP (1) JP2002522925A (de)
DE (1) DE69938418T2 (de)
GB (1) GB9817643D0 (de)
WO (1) WO2000010204A1 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9917099D0 (en) * 1999-07-22 1999-09-22 Koninkl Philips Electronics Nv Cellular trench-gate field-effect transistors
US6417554B1 (en) * 2000-04-27 2002-07-09 International Rectifier Corporation Latch free IGBT with schottky gate
DE10023115A1 (de) * 2000-05-11 2001-11-29 Infineon Technologies Ag Halbleiter-Leistungsbauelement mit reduziertem parasitärem Bipolartransistor
US7745289B2 (en) * 2000-08-16 2010-06-29 Fairchild Semiconductor Corporation Method of forming a FET having ultra-low on-resistance and low gate charge
US6765247B2 (en) 2001-10-12 2004-07-20 Intersil Americas, Inc. Integrated circuit with a MOS structure having reduced parasitic bipolar transistor action
US6781203B2 (en) * 2001-11-09 2004-08-24 International Rectifier Corporation MOSFET with reduced threshold voltage and on resistance and process for its manufacture
JP2004055803A (ja) * 2002-07-19 2004-02-19 Renesas Technology Corp 半導体装置
US7504691B2 (en) * 2004-10-07 2009-03-17 Fairchild Semiconductor Corporation Power trench MOSFETs having SiGe/Si channel structure
DE112005002418B4 (de) * 2004-10-07 2017-01-05 Fairchild Semiconductor Corporation Leistungstransistoren mit MOS-Gate und konstruierter Bandlücke
US20060163650A1 (en) * 2005-01-27 2006-07-27 Ling Ma Power semiconductor device with endless gate trenches
US7564096B2 (en) * 2007-02-09 2009-07-21 Fairchild Semiconductor Corporation Scalable power field effect transistor with improved heavy body structure and method of manufacture
US8017995B2 (en) 2007-11-20 2011-09-13 International Business Machines Corporation Deep trench semiconductor structure and method
US7825465B2 (en) * 2007-12-13 2010-11-02 Fairchild Semiconductor Corporation Structure and method for forming field effect transistor with low resistance channel region
CN102299153B (zh) * 2010-06-24 2013-01-09 大中积体电路股份有限公司 具有低栅极输入电阻的功率半导体组件及其制作方法
US9263598B2 (en) * 2014-02-14 2016-02-16 Semiconductor Components Industries, Llc Schottky device and method of manufacture
DE102015100390B4 (de) * 2015-01-13 2021-02-11 Infineon Technologies Austria Ag Halbleitervorrichtung mit feldplattenstrukturen und gateelektrodenstrukturen zwischen den feldplattenstrukturen sowie herstellungsverfahren

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2576173B2 (ja) * 1988-02-02 1997-01-29 日本電装株式会社 絶縁ゲート型半導体装置
JPH02184078A (ja) * 1989-01-11 1990-07-18 Meidensha Corp 電界効果トランジスタ
US5385853A (en) * 1992-12-02 1995-01-31 International Business Machines Corporation Method of fabricating a metal oxide semiconductor heterojunction field effect transistor (MOSHFET)
JPH07122749A (ja) * 1993-09-01 1995-05-12 Toshiba Corp 半導体装置及びその製造方法
US5323040A (en) * 1993-09-27 1994-06-21 North Carolina State University At Raleigh Silicon carbide field effect device
JP3211529B2 (ja) * 1993-12-27 2001-09-25 日産自動車株式会社 縦型ｍｉｓトランジスタ
JP3481287B2 (ja) * 1994-02-24 2003-12-22 三菱電機株式会社 半導体装置の製造方法
JP3361922B2 (ja) 1994-09-13 2003-01-07 株式会社東芝 半導体装置
JPH08279614A (ja) * 1995-02-08 1996-10-22 Ngk Insulators Ltd 半導体装置及びその製造方法
US5591655A (en) * 1995-02-28 1997-01-07 Sgs-Thomson Microelectronics, Inc. Process for manufacturing a vertical switched-emitter structure with improved lateral isolation
US5703383A (en) * 1995-04-11 1997-12-30 Kabushiki Kaisha Toshiba Power semiconductor device
JPH098301A (ja) * 1995-04-20 1997-01-10 Toshiba Corp 電力用半導体装置
JP2988871B2 (ja) * 1995-06-02 1999-12-13 シリコニックス・インコーポレイテッド トレンチゲートパワーｍｏｓｆｅｔ
DE19705276A1 (de) * 1996-12-06 1998-08-20 Semikron Elektronik Gmbh IGBT mit Trench-Gate-Struktur
JP3431467B2 (ja) * 1997-09-17 2003-07-28 株式会社東芝 高耐圧半導体装置

Also Published As

Publication number Publication date
GB9817643D0 (en) 1998-10-07
EP1044474B1 (de) 2008-03-26
EP1044474A1 (de) 2000-10-18
US6255692B1 (en) 2001-07-03
WO2000010204A1 (en) 2000-02-24
DE69938418T2 (de) 2009-04-09
JP2002522925A (ja) 2002-07-23

Similar Documents

Publication Publication Date Title
DE69942499D1 (de) Reflektierende Halbleitervorrichtung
DE69942813D1 (de) Halbleitervorrichtung
DE19823069B8 (de) Halbleiterbauelement
FI990534A (fi) CT-kuvauslaite
DE69935182D1 (de) Halbleiteranordnung
DE59913981D1 (de) Bedienvorrichtung
DE60034070D1 (de) Integrierte Halbleitervorrichtung
DE69839818D1 (de) Wandlervorrichtung
DE60036594D1 (de) Feldeffekt-Halbleiterbauelement
ATE323196T1 (de) Dosiervorrichtung
DE69937739D1 (de) Halbleitervorrichtung
DE69932692D1 (de) Pfosten-Panele Verbindungsvorrichtung
DE69912565D1 (de) Halbleiteranordnung
DE69901430D1 (de) Zentriereinrichtung
DE69940029D1 (de) Halbleiterbauelement
DE69941201D1 (de) Hochfrequenz-Halbleiteranordnung
DE19980453T1 (de) Halbleiterbauelement-Testgerät
DE60005959D1 (de) Halbleiteranordnung
DE69839597D1 (de) Hochfrequenzhalbleiteranordnung
DE69737320D1 (de) Halbleitervorrichtung
NO992660D0 (no) Tilbakeholdelsesanordning
DE69938418D1 (de) Graben-gate-halbleiteranordnung
DE69923374D1 (de) Halbleiteranordnung
DE59914216D1 (de) Prüfsonde-Antriebsvorrichtung
DE69927476T2 (de) Halbleiteranordnung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition