CN111095488A - 三维竖直nand字线的金属填充过程 - Google Patents

三维竖直nand字线的金属填充过程 Download PDF

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Publication number
CN111095488A
CN111095488A CN201880059689.1A CN201880059689A CN111095488A CN 111095488 A CN111095488 A CN 111095488A CN 201880059689 A CN201880059689 A CN 201880059689A CN 111095488 A CN111095488 A CN 111095488A
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tungsten
diborane
hydrogen
layer
semiconductor substrate
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Chinese (zh)
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劳伦斯·施洛斯
拉什纳·胡马雍
桑杰·戈皮纳特
高举文
迈克尔·达内克
凯寒·阿比迪·阿施蒂尼
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Lam Research Corp
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Lam Research Corp
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    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/14—Deposition of only one other metal element
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
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    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H01L21/02129—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG
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    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels

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  • Chemical & Material Sciences (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Powder Metallurgy (AREA)
CN201880059689.1A 2017-08-14 2018-08-10 三维竖直nand字线的金属填充过程 Pending CN111095488A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762545405P 2017-08-14 2017-08-14
US62/545,405 2017-08-14
PCT/US2018/046232 WO2019036292A1 (en) 2017-08-14 2018-08-10 METHOD FOR METAL CASTING FOR THREE-DIMENSIONAL NAND AND VERTICAL WORDS LINE

Publications (1)

Publication Number Publication Date
CN111095488A true CN111095488A (zh) 2020-05-01

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Country Status (7)

Country Link
US (1) US11348795B2 (ko)
JP (2) JP2020530881A (ko)
KR (1) KR20200032756A (ko)
CN (1) CN111095488A (ko)
SG (1) SG11202001268TA (ko)
TW (2) TWI784037B (ko)
WO (1) WO2019036292A1 (ko)

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KR20200032756A (ko) 2017-08-14 2020-03-26 램 리써치 코포레이션 3차원 수직 nand 워드라인을 위한 금속 충진 프로세스
TWI799494B (zh) * 2018-01-19 2023-04-21 荷蘭商Ａｓｍ 智慧財產控股公司 沈積方法
US11549175B2 (en) 2018-05-03 2023-01-10 Lam Research Corporation Method of depositing tungsten and other metals in 3D NAND structures
TWI848993B (zh) 2018-10-26 2024-07-21 美商蘭姆研究公司 三端子記憶體元件的自對準垂直集成
US11972952B2 (en) 2018-12-14 2024-04-30 Lam Research Corporation Atomic layer deposition on 3D NAND structures
WO2020210260A1 (en) * 2019-04-11 2020-10-15 Lam Research Corporation High step coverage tungsten deposition
US11476267B2 (en) * 2019-05-24 2022-10-18 Applied Materials, Inc. Liner for V-NAND word line stack
CN114269963A (zh) 2019-08-12 2022-04-01 朗姆研究公司 钨沉积
US11812610B2 (en) 2019-08-13 2023-11-07 Micron Technology, Inc. Three-dimensional memory with conductive rails in conductive tiers, and related apparatus, systems, and methods
JP7295749B2 (ja) * 2019-09-13 2023-06-21 キオクシア株式会社 半導体装置の製造方法
CN110797300A (zh) * 2019-10-21 2020-02-14 长江存储科技有限责任公司 金属钨的填充方法
US20210126103A1 (en) * 2019-10-29 2021-04-29 Micron Technology, Inc. Apparatus comprising wordlines comprising multiple metal materials, and related methods and electronic systems
KR20210111017A (ko) * 2020-03-02 2021-09-10 주식회사 원익아이피에스 기판 처리 방법 및 이를 이용하여 제조된 반도체 소자
US11456208B2 (en) 2020-08-11 2022-09-27 Micron Technology, Inc. Methods of forming apparatuses including air gaps between conductive lines and related apparatuses, memory devices, and electronic systems
US11715692B2 (en) 2020-08-11 2023-08-01 Micron Technology, Inc. Microelectronic devices including conductive rails, and related methods
US11574870B2 (en) 2020-08-11 2023-02-07 Micron Technology, Inc. Microelectronic devices including conductive structures, and related methods
US11594495B2 (en) 2021-03-23 2023-02-28 Micron Technology, Inc. Microelectronic devices including conductive levels having varying compositions, and related memory devices, electronic systems, and methods
KR20240038105A (ko) * 2021-09-08 2024-03-22 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 방법, 반도체 장치의 제조 방법, 기판 처리 장치 및 프로그램
US20230399738A1 (en) * 2022-06-08 2023-12-14 Nanya Technology Corporation Method for fabricating semiconductor device with composite contact structure

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