CN109154743A - 用于光漫射的方法和设备 - Google Patents

用于光漫射的方法和设备 Download PDF

Info

Publication number
CN109154743A
CN109154743A CN201780027031.8A CN201780027031A CN109154743A CN 109154743 A CN109154743 A CN 109154743A CN 201780027031 A CN201780027031 A CN 201780027031A CN 109154743 A CN109154743 A CN 109154743A
Authority
CN
China
Prior art keywords
led
substrate
reflecting element
diffusing globe
equipment according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201780027031.8A
Other languages
English (en)
Inventor
科迪·彼得森
安德鲁·胡斯卡
M·汉森
克林特·亚当斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohinni LLC
Original Assignee
Rohinni LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohinni LLC filed Critical Rohinni LLC
Publication of CN109154743A publication Critical patent/CN109154743A/zh
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133603Direct backlight with LEDs
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133605Direct backlight including specially adapted reflectors
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133606Direct backlight including a specially adapted diffusing, scattering or light controlling members
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4853Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67132Apparatus for placing on an insulating substrate, e.g. tape
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67259Position monitoring, e.g. misposition detection or presence detection
    • H01L21/67265Position monitoring, e.g. misposition detection or presence detection of substrates stored in a container, a magazine, a carrier, a boat or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67715Changing the direction of the conveying path
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/681Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment using optical controlling means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10Measuring as part of the manufacturing process
    • H01L22/12Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/53209Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53242Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75Apparatus for connecting with bump connectors or layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/89Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using at least one connector not provided for in any of the groups H01L24/81 - H01L24/86
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1335Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336Illuminating devices
    • G02F1/133602Direct backlight
    • G02F1/133612Electrical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68363Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving transfer directly from an origin substrate to a target substrate without use of an intermediate handle substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54413Marks applied to semiconductor devices or parts comprising digital information, e.g. bar codes, data matrix
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54426Marks applied to semiconductor devices or parts for alignment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54433Marks applied to semiconductor devices or parts containing identification or tracking information
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486Located on package parts, e.g. encapsulation, leads, package substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16238Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bonding area protruding from the surface of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75252Means for applying energy, e.g. heating means in the upper part of the bonding apparatus, e.g. in the bonding head
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75261Laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/75261Laser
    • H01L2224/75262Laser in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75302Shape
    • H01L2224/75303Shape of the pressing surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75302Shape
    • H01L2224/7531Shape of other parts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525Means for applying energy, e.g. heating means
    • H01L2224/753Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301Bonding head
    • H01L2224/75314Auxiliary members on the pressing surface
    • H01L2224/75317Removable auxiliary member
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7565Means for transporting the components to be connected
    • H01L2224/75651Belt conveyor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/757Means for aligning
    • H01L2224/75753Means for optical alignment, e.g. sensors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758Means for moving parts
    • H01L2224/75821Upper part of the bonding apparatus, i.e. bonding head
    • H01L2224/75824Translational mechanism
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758Means for moving parts
    • H01L2224/75841Means for moving parts of the bonding head
    • H01L2224/75842Rotational mechanism
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/758Means for moving parts
    • H01L2224/75841Means for moving parts of the bonding head
    • H01L2224/75842Rotational mechanism
    • H01L2224/75843Pivoting mechanism
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8119Arrangement of the bump connectors prior to mounting
    • H01L2224/81191Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/81201Compression bonding
    • H01L2224/81205Ultrasonic bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812Applying energy for connecting
    • H01L2224/8122Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/81224Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/832Applying energy for connecting
    • H01L2224/8322Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/83224Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/12Passive devices, e.g. 2 terminal devices
    • H01L2924/1204Optical Diode
    • H01L2924/12041LED
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/40Details of apparatuses used for either manufacturing connectors or connecting the semiconductor or solid-state body
    • H01L2924/401LASER
    • H01L2924/405Wavelength
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008Processes
    • H01L2933/0033Processes relating to semiconductor body packages
    • H01L2933/0066Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Planar Illumination Modules (AREA)
  • Led Device Packages (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)
  • Fastening Of Light Sources Or Lamp Holders (AREA)
  • Liquid Crystal (AREA)
  • Arrangement Of Elements, Cooling, Sealing, Or The Like Of Lighting Devices (AREA)
  • Optical Elements Other Than Lenses (AREA)

Abstract

一种设备包括衬底和LED,所述LED经由所述LED的第一侧上的导电衬垫而附接到所述衬底。所述LED包括:第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧,以便在远离所述衬底的方向上反射光;以及第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧。所述第二反射元件设置成主要在朝向所述衬底的方向上反射光。

Description

用于光漫射的方法和设备
相关专利申请的交叉引用
本申请要求在2016年3月18日提交的标题为“Method and Apparatus for LightDiffusion”的美国专利申请号15/075,001的优先权,并且将所述申请的内容以引用的方式整体并入。本申请进一步以引用的方式整体并入在2015年11月12日提交的标题为“Methodand Apparatus for Transfer of Semiconductor Devices”的美国专利申请号14/939,896。
背景技术
基础液晶显示器(LCD)的层经过结构化。LCD的背面具有镜面,这使得其具有反射性。随后,添加在底侧上具有偏振膜的一块玻璃以及顶部上的由氧化铟锡制成的共同电极平面。共同电极平面覆盖LCD的整个区域。在其上方是液晶物质层。接下来是在底部上具有电极的另一块玻璃以及顶部上的与第一偏振膜成直角设置的另一偏振膜。
所述电极连接到电源。当未施加电流时,穿过LCD的前方进入的光将仅仅撞击所述镜面并且往回反弹出。但当电源将电流供应给所述电极时,共同电极平面与形状像矩形的电极之间的液晶反扭并阻止那个区中的光穿过。这使得LCD将显示器示出为黑色。
可以示出色彩的LCD的像素通常具有三个子像素,所述三个子像素具有红色、绿色和蓝色滤色器以产生每个彩色像素。通过控制和改变施加到子像素的电压,每个子像素的强度的范围可以包括多个色度(例如,256个色度)。组合所述子像素会产生可能的多得多的色彩的调色板(例如,1680万种色彩(256个红色色度×256个绿色色度×256个蓝色色度))。
LCD技术在不断演变。如今的LCD采用液晶技术的若干变化形式,包括超扭曲向列(STN)、双扫描扭曲向列(DSTN)、铁电液晶(FLC)以及表面稳定铁电液晶(SSFLC)。
此外,一般来说,用于将光提供给LCD的光源通常置于两个地方之一。在一些情况下,沿着LCD的边缘可以是冷阴极荧光(CCFL)或者发光二极管(LED)的阵列,从而形成常常被称为“侧光”LCD的东西,这是因为光被发射到漫射器的侧边缘中。在其他情况下,光源可以在显示器的前方的平面后方被布置成阵列或者矩阵,从而形成常常被称为“背光”LCD的东西,这是因为光从显示器的背表面被发射到漫射器中。在任一情况下,使用包括漫射器的光学系统来使光散开,这些光从背后照亮显示器的像素。实际上,这些光通常是显示器中的仅有的光。
所述光学系统包括第一片材,所述第一片材形成所述光的白色背景。下一个零件是所谓的“光导板”(LGP)或者盖板。当光从侧光显示器中的LGP的边缘进入时,所述光通过全内反射传播穿过所述板的长度和宽度,除非所述光撞击所述LGP内的许多点中的一者。所述点使得光线中的一些光线从前方出去。接下来,添加漫射器膜以有助于从光导板消除点图案。之后,可以添加“棱镜膜”。之所以使用这个是因为来自背光的光不仅显现为垂直于背表面而且还处于斜角。此棱镜膜增加了光发射的垂直度。最后,可以添加另一漫射器膜以试图有助于均匀地照亮显示表面的平面。实质上,LGP、棱镜膜以及漫射器膜的目的统统是充当漫射器层来散布光源的光发射,以试图使得光跨越显示表面的整个平面显得是均匀的,从而使得光发射的源点处的亮点的强度最小化。
不管LCD是侧光还是背光,所使用的常规LED的大小影响了LCD的厚度以及漫射光所需的漫射器的大小。
关于在常规显示器中使用的LED的大小,最终结果是通过根据常规方法的制造和组装过程来确定。具体来说,LED半导体装置的制造通常涉及具有无数步骤的复杂制造过程。制造的最终产品是“封装好的”半导体装置。“封装好的”修饰语是指构建到最终产品中的外壳和保护特征以及使得封装中的装置能够并入到最终电路中的接口。此封装影响LED的厚度。
值得注意的是,半导体装置的常规的制造过程开始于处置半导体晶片。将晶片切块为众多“未封装”的半导体装置,例如LED。“未封装”修饰语是指没有保护特征的未封围的LED。在本文,出于简单起见,未封装的LED可以被称为“裸片”。在一些情况下,未封装的LED的厚度可以是50微米或者更小。
附图说明
参考附图陈述具体实施方式。在图中,参考数字的最左边数字识别了所述参考数字第一次出现所在的图。在不同的图中使用相同的参考数字会指示类似或相同的项目。此外,图式可以被视为提供个别图内的个别组件的相对大小的近似描绘。然而,图式未按比例,并且个别图和不同图内的个别组件的相对大小可以不同于所描绘的大小。具体来说,一些图可以将组件描绘为特定大小或者形状,而其他图可以出于清晰起见而在更大的尺度上或者不同形状地描绘相同的组件。
图1说明光一般如何从常规的LED发射。
图2说明根据本申请的实施方案的设备的侧面横截面视图。
图3说明根据本申请的另一实施方案的设备的侧面横截面视图。
图4说明根据本申请的另一实施方案的设备的侧面横截面视图。
图5说明根据本申请的实施方案的设备的平面图。
图6说明根据本申请的实施方案的设备的侧面横截面视图。
图7说明根据本申请的另一实施方案的设备的侧面横截面视图。
图8说明根据本申请的实施方案的设备的平面图。
图9说明根据本申请的实施方案的示例性方法。
图10说明根据本申请的实施方案的示例性方法。
具体实施方式
概述
本公开一般针对于用于跨越(例如)具有LCD的装置的显示表面的平面有效并一致地漫射光的方法和设备。举例来说,本申请提供关于“嵌套式漫射器”的方法和设备的描述。嵌套式漫射器的本文描述的特征增加了光的漫射(以先前方法相比),同时使得用于跨越显示表面提供均匀的光分布的光源的数目最小化,从而降低制造成本且/或使得显示器的厚度最小化。本文使用术语“嵌套式漫射器”来描述在LCD的其中光被漫射的同一层内发生光漫射的特征,即,在光源的大致高度/厚度处在漫射器内发生光漫射。换句话说,光源可以设置或者“嵌套”在LCD的提供光漫射的层内。因此,嵌套式漫射器。通过将光源直接设置在光漫射层内,可以减小LCD的总厚度。
此外,至少部分由于所使用的光源的极小的大小和光漫射的方式,可以减小在其上应用本申请的方法或设备的装置的厚度。具体来说,可以将漫射器的厚度减小到大致光源的高度。在一些情况下,所述光源可以选自封装好的或未封装的LED。与使用封装好的LED的显示器相比,使用未封装的LED增加了制成更薄的显示器的能力。
图1说明常规LED 102的光发射100的近似图案。也就是说,由于常规LED 102的性质,光一般在环绕LED 102的多个方向上发射。如所示,通过虚线圆形和箭头线出于说明的目的而描绘的光发射图案104指示光从LED 102的顶侧和LED 102的底侧以及部分从其侧边发射。应注意,光发射图案104可以不受限于如图1中描绘的确切图案。在一些情况下,常规的LED 102可以包括LED 102的单侧上的半反射性表面或镜状表面(未示出)。
在此常规配置中,当LED 102附接到具有借以向LED 102供电以发射光的电路的衬底(未示出)时,图1的光发射图案104指示从LED 102发射的光的大致一半将指向LED 102连接到的衬底。依据衬底的形态和材料特性以及将在使用LED 102的装置中实施衬底的方式,一般会丢失朝向所述衬底发射的光或者所述光对照明装置的既定目的具有最小的贡献。
LED的说明性实施方案和均匀光漫射的嵌套漫射器
根据本申请的实施方案,图2说明体现光源阵列的设备200,所述光源阵列可以按照跨越与显示表面的平面相对应的漫射器的平面而分布的多个行和列而布置,从而形成嵌套式漫射器。另外和/或替代地,所述光源可以在整个漫射器上按照除了行和列之外的图案分布。
在说明性实施方案中,设备200可以包括衬底202和固定到衬底202的多个LED(例如,LED 204A、204B)。应注意,在一些情况下,可以存在仅一个LED。LED 204A、204B可以是在顶侧上具有电触点的标准LED,或者可以是在底侧上具有电触点的倒装芯片。衬底202包括电路迹线(在稍后更详细地示出和论述),LED 204A、204B经由所述电路迹线而附接到衬底202并且被供电。因此,衬底202可以是电路板,例如印刷电路板(PCB)。另外,衬底202可以由聚合物形成为具有与LED 204A、204B的高度大致相同的厚度的薄膜。用于衬底202的合适的材料包括即使由于一个或多个LED中的电流流动而引起的潜在温度变化也能够维持结构完整性的多种材料,例如PET。
安装到衬底202的LED可以依据技术需要而分别具有不同的结构配置,或者所有LED可以具有类似的结构配置。如关于LED 204A(LED 204B示出类似的配置)所描绘和论述,LED 204A包括第一反射元件206A和第二反射元件206B。第一反射元件206A可以形成于LED204A的与LED 204A的附接到衬底202的侧面相对的侧面上,以便朝向衬底反射光。第二反射元件206B可以形成于LED 204A的附接到衬底202的侧面上。
此外,第一反射元件206A和第二反射元件206B可以是镜状表面。在一些情况下,第一反射元件206A和第二反射元件206B是由金属镜接触件形成。铝(Al)和银(Ag)是对于蓝色LED波长范围具有最高反射率的金属。全向反射元件可以由具有不同折射率的介电材料的堆叠制成。这些介电材料可以包括TiO2、SiO2、HfO2、Ta2O5等。另外,和/或替代地,可以使用白色漫射性基于聚合物的反射元件材料(其可为嵌入有一些TiO2状颗粒的纺成纤维)。应注意,第一反射元件206A和第二反射元件206B可以由相同的材料或者不同的材料形成。也就是说,第一反射元件206A可以由第一材料形成,并且第二反射元件206B可以由不同于所述第一材料的第二材料形成(例如,第一反射元件206A可以是铝并且第二反射元件206B可以是银,或者反之亦然)。
因为上文描述的LED的设计和结构在引导所发射的光方面是有用的,所以可以将LED 204A、204B实施为侧光LCD中的LED,以从边缘(未示出)将光发射聚焦到光导板中以及嵌套在如本文描述的漫射器中。
在一些情况下,可以首先将多个LED 204A、204B放置在衬底202上,并且可以使漫射器208与所述多个LED 204A、204B对准以便将多个LED 204A、204B嵌套在漫射器208内。替代地,可以将多个LED 204A、204B直接嵌套在漫射器208中,随后使所述漫射器与衬底202上的电路对准。如所描绘,可以将玻璃、塑料或者其他合适的透明或者半透明材料的显示面板209放置在LED和漫射器208的与衬底202相对的侧上,以便将多个LED 204A、204B和漫射器208夹在其间。漫射器208充当光导或漫射器板以辅助跨越显示面板209均匀地分布由多个LED 204A、204B发射的光。漫射器208的材料可以包括硅胶、聚碳酸酯(PC)、聚对苯二甲酸乙二醇酯(PET)、玻璃等。此外,漫射器208可以是薄的可模制的聚合物片材。
在一些情况下,如所示,可以将第三反射元件210设置或者涂覆在衬底202的表面上以至少部分覆盖衬底202的表面的在相邻LED之间(在204A和204B之间)的区域,或者设置或涂覆在漫射器208的表面上。第三反射元件210的材料可以由反射材料形成,例如上文关于第一反射元件206A和第二反射元件206B所论述的反射材料,包括铝、银等。第三反射元件210的材料有助于使光吸收最小化,或者另外使衬底202对所发射的光的不利影响最小化,例如穿过漫射器208中的相邻LED之间的衬底202。在一些情况下,衬底202可以由固有反射的材料形成。替代地,可以不需要第三反射元件,因为第三反射元件对于特定技术目的可能是不合意的。举例来说,可能是合意的是,衬底202是透明或者半透明的,以允许穿过衬底202的一些光发射。
LED 204B的横截面特写视图212描绘光发射214的反射,其指示光发射214可以在第一反射元件与第二反射元件之间来回反射,直到到达LED 204B的侧边为止。在到达LED204B的侧边之后,光发射214进入漫射器208中。以此方式,能够捕获几乎所有的所发射的光并且将所述光引导向显示面板209,从而损失极少量的光。
另外,和/或替代地,在一些情况下,设置在LED的与衬底202相对的侧面上的反射元件222可以由在提供部分反射表面的同时仍然稍微半透明的材料形成,以便准许一些光发射216穿过所述反射表面并且穿过显示面板209出来。举例来说,所述反射表面可以由非常薄的银层(例如,小于特定厚度)形成。
在图2的视图212中还描绘LED 204B的导电衬垫218,所述导电衬垫用于传导电力并且经由电路迹线220将LED 204B附接到衬底202。可以由经由丝网印刷、喷墨印刷、激光印刷、手动印刷或者其他印刷手段而设置的导电油墨来形成电路迹线220。此外,电路迹线220可以是预先固化和/或半干燥或者干燥的,以提供额外的稳定性,同时仍然可激活来用于裸片导电目的。还可以使用湿导电油墨来形成电路迹线220,或者可以使用湿和干燥油墨的组合来用于电路迹线220。替代地,或者另外,电路迹线220可以预先形成为电线迹线,或者经过光蚀刻,或者由熔化材料形成为电路图案并且随后粘附、嵌入或者以其他方式固定到衬底202。
电路迹线220的材料可以包括(但不限于)银、铜、金、碳、导电聚合物等。在一些情况下,电路迹线220可以包括涂覆有银的铜颗粒。电路迹线220的厚度可以依据所使用的材料的类型、既定功能以及适当的强度或灵活性而变化,以实现所述功能、能量容量、LED的大小等。举例来说,电路迹线的厚度的范围可以从约5微米到20微米、从约7微米到15微米,或者从约10微米到12微米。
关于如视图212中所示的LED 204B的反射元件,在一些情况下,反射元件222可以跨越LED 204B的整个宽度延伸,或者替代地,反射元件224可以基本上跨越或者部分跨越LED 204B的宽度延伸。可以在LED的任一侧上使用跨越延伸LED的整个宽度延伸的反射元件或者仅部分跨越LED的宽度延伸的反射元件。另外,和/或替代地,LED内的两个反射元件可以是相同大小并且一直跨越LED的宽度或者部分跨越LED的宽度延伸。
类似于图2,在图3中描绘的设备300包括电路衬底302,在所述电路衬底上设置有多个LED 304A、304B。每个LED 304A、304B可以包括反射表面306A、306B。漫射器308邻近于衬底302而与多个LED 304A、304B对准,以便与多个LED 304A、304B嵌套。在一些情况下,衬底302可以由固有反射的材料形成。替代地,可以不需要第三反射元件,因为第三反射元件对于特定技术目的可能是不合意的。举例来说,可能是合意的是,衬底302是透明或者半透明的,以允许穿过衬底302的一些光发射。
如图3中描绘,显示面板310与衬底302相对地设置,从而夹住嵌套式漫射器308。在图3中示出的额外细节包括以下变化:将LED 304A、304B光学地耦合到漫射器308,以增强来自离开LED并进入漫射器308中的光的光传输。在一些实施方案中,在LED的边缘与漫射器之间可以存在相对很少或者没有间隙或间距(相对于LED的极小的大小)。因此,在以上实施方案中,在LED的侧边与邻接的漫射器壁之间直接出现光学耦合。应注意,所有图出于描述清晰起见而描绘某一最小间距以示出不同组件之间的区别。然而,图2和图6可以表示在LED与漫射器之间没有间隙或间距。
另外,和/或替代地,在一些情况下,在LED 304A与漫射器308之间有意包括间隙或间距,可以在所述间隙或间距中并入不同的光学耦合。在包括间隙的实施方案的一些情况下,可以将磷光体330沉积在LED 304A上以及至少沉积在LED 304A的侧面周围,以便通过在间隙中进行填充并且在光发射进入漫射器308之前漫射所述光发射来将LED 304A和漫射器308光学耦合。当需要白光时,使用磷光体是特别有用的。在包括间隙的实施方案的其他情况下,可以将例如硅胶、磷光体等材料340沉积在LED 304B的侧面周围,以便通过在间隙中进行填充并且在光发射进入漫射器308之前漫射所述光发射来将LED 304B和漫射器308光学耦合。应注意,被描绘为穿过LED 304A和304B的顶表面的光发射的数量是不同的。如先前提及,相应LED之间的反射表面306A和306B的透明度可能相差完全不透明的范围,以允许所要量的光直到显示面板310。
另外,预期嵌套式漫射器(208、308)的结构概念,并且所述嵌套式漫射器以多种方式被配置成用于光分布和漫射。也就是说,可以在没有显示面板的情况下植入所述嵌套式漫射器,并且所述嵌套式漫射器适合于为除了LCD之外的装置提供漫射光。在一些情况下,所述嵌套式漫射器包括在开放空腔或者通孔中嵌套在其中的LED,如图2和图3中描绘。另外,和/或替代地,LED或者其他光源在一个或多个侧面上可以被漫射器衬底的材料覆盖。另外,此类漫射器的说明性实施方案是图4中的设备400。设备400包括漫射器衬底402,所述漫射器衬底中嵌入或嵌套有光源404(例如,LED)。漫射器衬底402的平均厚度可以薄于光源404的高度(例如,范围是约12微米到约100微米,或者约25微米到约80微米,或者约35微米到约50微米等)。可以在凸起部分406中模制或者以其他方式形成漫射器衬底402以覆盖光源404的至少一侧。同样地,漫射器衬底402可以至少部分覆盖光源404的底侧。光源404包括导电衬垫408,可以使用所述导电衬垫向光源404供电。
此外,光源404可以包括或者可以不包括一个或多个像在LED 204A、204B、304A、304B上描绘的反射元件那样的反射元件。预期漫射器衬底402可以包括纹理特征(在本文进一步论述)以辅助漫射从光源发射的光。举例来说,在一些情况下,漫射器衬底可以与所嵌套的光源的高度一样厚或者厚于所述高度,并且可以向漫射器衬底的表面添加纹理。
因此,本文论述的嵌套式漫射器的实现方式不限于在LCD中使用,并且所述嵌套式漫射器可以用作用于众多其他用途的平坦或衬底漫射光源。
图5描绘LED 500的平面图。LED 500可以包括用于产生光的半导体材料502的一个或多个层。LED 500还包括电流扩散层504A、504B,所述电流扩散层辅助将电力安全地提供给LED 500,经由导电衬垫506A、506B将所述电力传导到LED 500。在一些情况下,可以对被选择用于电流扩散层504A、504B的材料进行选择,并且与半导体材料502一起设置,以便充当LED 500的侧面中的一者上的第一反射元件,而相对的侧面可以包括第二反射元件。电流扩散层504A、504B不限于在图5中描绘的相对大小。也就是说,电流扩散层504A、504B可以相对于导电衬垫506A、506B更大或者更小,这取决于所要的反射特性以及所需的功能性方面。此外,电流扩散层504A、504B的厚度可以改变以增加或减小反射率。
如图6中描绘,设备600的侧面横截面包括电路衬底602,在所述电路衬底上设置有嵌套在漫射器606内的LED 604的阵列。所述阵列的LED 604可以是根据本申请的包括第一反射元件和第二反射元件(如所示但未标记)的LED。在具有LED 604的阵列的衬底602与显示面板608之间的光学距离间距Y可以依据LED 604的厚度和穿过漫射器606的漫射的效能而变化。LED 604的阵列可以按照具有LED 604的若干列和行的矩阵而跨越电路衬底602的表面布置。(参见图8的平面图)。相邻LED的图心之间的LED间隔距离X可以依据LED 604的大小以及穿过漫射器606和显示面板608的漫射的效能而变化。应注意,距离X最终受到相邻LED的宽度限制。此外,距离Y最终受到衬底602上的LED的高度限制。
在许多情况下,衬底602与显示面板608之间的高度的间距与相邻LED 604之间的间距相关。所述相互关系依据所使用的LED的数目、漫射的效能、所要的亮度、装置的所要厚度等而变化。最终,目标是为用户提供跨越显示面板608的整个表面的均匀的照明,同时使LED的数目最少化以节约成本和功耗,并且使衬底602与显示面板608之间的距离Y最小化,以便使显示器的总厚度尽可能薄。一般来说,随着Y的值减小,X的值也减小,这意味着阵列中的LED的数目会增加以均匀地照亮显示器而没有在视觉上明显的光点。
为了使在减小距离Y时所需的LED的数目最小化,可以向漫射器的表面和/或主体添加纹理。举例来说,在图7中,设备700的侧面横截面VII(参见图8)描绘电路衬底702,所述电路衬底具有设置在上面的嵌套在漫射器706中的LED 704的阵列。衬底702与显示面板708之间的距离Y可以变化。在一些情况下,漫射器706可以包括纹理特征710。纹理特征710可以朝向衬底702凹入,如图7中描绘,或者它们可以是凸的(未示出)。另外,和/或替代地,纹理特征710可以包括凹结构和凸结构的组合。可以按某一图案来组织纹理特征710,或者可以跨越表面或者在漫射器706内随机地设置纹理特征。
应注意,在图7中在一些情况下被描绘为半圆并且在其他情况下被描绘为带峰凹部的纹理特征710可以是对于漫射来自LED 704的光来说是有效的其他已知或者随机的形状。举例来说,纹理特征710可以是三角形、锥体、球形、矩形、六边形等。图7中的纹理特征710的形状仅表示根据本申请的示例性实施方案。此外,虽然在图7中描绘的纹理特征依据远离LED 704的距离而在深度和宽度上增加,但在一些情况下,可以仅改变深度或者仅改变宽度来实现光的均匀漫射。因此,其他预期的纹理特征包括具有相同的宽度但深度增加的特征(例如,进入漫射器的宽度相同且深度增加的管状形状);以及具有相同的深度但广度增加的特征(例如,进入漫射器的深度相同且随着距光源的距离而变化的跨越漫射器的递增的宽度的煎饼状凹部)。
除了在LED上使用第一反射元件和第二反射元件来用于漫射由LED发射的光穿过显示面板之外,纹理特征,例如上文描述的纹理特征,可以与所述反射元件组合作用以提供更均匀照亮的显示表面。在一些情况下,如在图8中的漫射器706的平面图中所见,漫射器706可以包括多个纹理特征710。在所述阵列中,在漫射器706上示出纹理特征,大圆800表示嵌套在漫射器706内的LED(未示出)的位置。大圆800不一定指示光在那个位置将是最亮,而是仅仅指示从嵌套在漫射器706中的LED发射的光的初始分布的源头。
将个别纹理特征802描绘为在与大圆800处的LED的位置的图心相距第一径向距离处的圆。将另一个别纹理特征804描绘为在与大圆800处的LED的位置的图心相距第二径向距离处的不同大小的圆。应注意,纹理特征804小于纹理特征802。此外,在纹理特征系列806中,出现一种图案,所述图案示出最靠近LED的纹理特征(例如,纹理特征804)的大小比沿径向进一步远离LED的纹理特征(例如,纹理特征802)小。也就是说,在一些情况下,随着纹理特征与LED之间的距离增加,纹理特征的大小可以增加,以便捕获更多的光并且进而漫射更多的光,从而通过整个漫射器706和叠加的显示面板提供均匀的照明。相关地,随着纹理特征与LED之间的距离减小,纹理特征的大小可以减小,以便减少在光源附近被捕获的光的量。
虽然在图8中看似纹理特征未跨越整个漫射器706延伸(即,在LED之间的没有纹理特征的大间隙),但图8的说明仅意图作为实例并且因此出于描述清楚起见进行描绘,并且避免描绘的复杂性。然而,如区域808中所示,预期纹理特征可以跨越整个漫射器706连续地延伸。应注意,在相邻LED的一些情况下,纹理特征的大小可以达到大约为任何两个相邻LED之间的一半的最大大小。在区域808的中间示出的纹理特征(例如)可以由于它们在侧向相邻的LED之间的位置而被视为处于最大大小。出于清楚起见,当在两个LED之间没有嵌套在漫射器中的介入LED时,可以将所述两个LED视为侧向相邻。因此,在图8中,无论LED是对角设置、水平设置还是彼此垂直间隔地设置,所述LED都被视为相邻。
另外,和/或替代地,如先前指示,纹理特征可以在随机定位的同时均匀地分布以便维持漫射的均匀性。可以经由激光蚀刻、滚花、模制、刮削等来实现纹理特征的产生。
形成LED的方法的说明性实施方案
在图9中描绘根据本申请的实施方案的产生LED的方法900。方法900包括形成半导体的步骤902。在一些情况下,所述形成半导体的步骤可以类似于用于形成用作LED的半导体的步骤。在其他情况下,可以执行其他步骤。方法900还包括产生具有反射表面的第一反射元件的步骤904。在半导体的第一侧上产生第一反射元件,使得所述反射表面朝向半导体向内反射光。此外,在906处,产生具有反射表面的第二反射元件。在半导体的与半导体的第一侧相对的第二侧上产生所述第二反射元件,使得所述第二反射元件的反射表面朝向半导体并且朝向第一反射元件向内反射光。
在方法900中,所述第一反射元件和所述第二反射元件可以由例如铝、银、TiO2、SiO2、HfO2、Ta2O5或者白色漫射性基于聚合物的反射材料的材料形成。此外,所述第一反射元件和第二反射元件中的一者或两者可以形成为非常薄的层(例如,小于阈值距离),使得所述反射元件在一定程度上是半透明的,同时仍然维持大体上反射的表面。
形成嵌套式漫射器的方法的说明性实施方案
在图10中描绘根据本申请的实施方案的产生嵌套式漫射器的方法1000。方法1000包括获得漫射器衬底的步骤1002。在一些情况下,所述获得漫射器衬底的步骤可以包括在衬底上产生上文论述的纹理特征的额外步骤。可以经由激光蚀刻、滚花、模制、刮削等来实现纹理特征的产生。替代地,在一些情况下,可以在先前已经将纹理特征添加到漫射器衬底,或者所述漫射器衬底可以完全不包括纹理特征。在其他情况下,可以执行其他步骤。方法1000还包括将一个或多个LED嵌套在漫射器衬底内的步骤1004。可以在将LED附接到电路衬底之前或之后执行步骤1004。此外,在1006处,将嵌套式漫射器设置在LCD设备中的任选的步骤。
示例性条款
A:一种设备包括:衬底;以及LED,所述LED经由所述LED的第一侧上的导电衬垫而附接到所述衬底,所述LED包括:第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧,以便在远离所述衬底的方向上反射光;以及第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成主要在朝向所述衬底的方向上反射光。
B:根据段落A的设备,其中所述LED是第一LED,并且其中所述设备还包括第二LED,所述第二LED设置在所述衬底上并且与所述第一LED间隔开,并且其中在所述第一LED与所述第二LED之间的所述衬底的一部分包括反射表面,所述反射表面设置成在远离所述衬底的方向上反射光。
C:根据段落A-B中的任一者的设备,其中所述LED是第一LED,并且其中所述设备还包括第二LED,所述第二LED设置在所述衬底上并且与所述第一LED间隔开,并且其中所述第二LED包括以下各者中的至少一者:第一反射元件,所述第一反射元件设置成邻近于所述第二LED的第一侧以便在远离所述衬底的方向上反射光;或者第二反射元件,所述第二反射元件设置成邻近于第二侧以便在朝向所述衬底的方向上反射光。
D:根据段落A-C中的任一者的设备,所述设备还包括漫射器,所述漫射器与所述LED对准以便将所述LED嵌套在所述漫射器内,所述漫射器的材料包括硅胶、聚碳酸酯(PC)或者聚对苯二甲酸乙二醇酯(PET)中的至少一者。
E:根据段落A-D中的任一者的设备,所述设备还包括漫射器,所述漫射器由可模制聚合物膜形成,所述漫射器设置成邻近于所述衬底与所述LED嵌套。
F:根据段落A-E中的任一者的设备,所述设备还包括导电迹线,所述导电迹线设置在所述衬底上并且连接到所述LED的所述导电衬垫。
G:根据段落A-F中的任一者的设备,其中所述衬底是印刷电路板(PCB)。
H:根据段落A-G中的任一者的设备,其中所述第一反射元件或者所述第二反射元件中的至少一者至少部分跨越所述LED的宽度延伸。
I:根据段落A-H中的任一者的设备,其中所述第一反射元件或者所述第二反射元件中的至少一者跨越所述LED的整个宽度延伸。
J:根据段落A-I中的任一者的设备,其中所述第一反射元件或者所述第二反射元件中的至少一者形成为所述LED的电流扩散层。
K:根据段落A-J中的任一者的设备,其中所述第一反射元件或者所述第二反射元件中的至少一者的材料是以下各者中的一者:铝、银、TiO2、SiO2、HfO2、Ta2O5,或者白色漫射性基于聚合物的反射材料。
L:一种设备包括:漫射器衬底;以及LED阵列,所述LED阵列嵌套在所述漫射器衬底内,每个LED在所述LED的第一侧上包括导电衬垫,并且每个LED包括:第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧以便在横向于所述漫射器衬底的平面的第一方向上反射光;以及第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成在横向于所述漫射器衬底的平面并且与所述第一方向相对的第二方向上反射光。
M:根据段落L的设备,所述设备还包括附接到所述LED的电路衬底。
N:根据段落L-M中的任一者的设备,其中所述漫射器衬底包括纹理特征。
O:根据段落L-N中的任一者的设备,其中所述漫射器衬底的表面包括在所述LED阵列的至少一个LED周围沿圆周延伸的纹理特征。
P:根据段落L-O中的任一者的设备,其中特定纹理特征的最大尺寸的大小取决于所述至少一个LED与所述特定纹理特征之间的径向距离。
Q:根据段落L-P中的任一者的设备,其中与所述至少一个LED相距第一径向距离而设置的第一特定纹理特征的最大尺寸小于与所述至少一个LED相距第二径向距离而设置的第二特定纹理特征的最大尺寸,所述第一径向距离短于所述第二径向距离。
R:根据段落L-Q中的任一者的设备,其中所述漫射器衬底的表面包括在所述LED阵列的每个LED周围沿圆周延伸的纹理特征,并且其中每个纹理特征的大小取决于距一个或多个LED的径向距离。
S:根据段落L-R中的任一者的设备,其中在两个相邻LED之间的距离上的一半处设置的特定纹理特征的深度和/或宽度大于在不足是所述两个相邻LED之间的一半的距离而定位的纹理特征的对应的深度和/或宽度。
T:一种设备包括:电路衬底;显示面板,所述显示面板基本上平行于所述电路衬底而设置;漫射器衬底,所述漫射器衬底设置在所述电路衬底与所述显示面板之间;以及呈列和行的LED阵列,所述LED阵列跨越所述漫射器衬底的平面而嵌套并且附接到所述电路衬底,每个LED经由所述LED的第一侧上的导电衬垫进行附接,每个LED包括以下各者中的至少一者:第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧以便在横向于所述漫射器衬底的平面的第一方向上反射光;或者第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成在横向于所述漫射器衬底的平面并且与所述第一方向相对的第二方向上反射光,其中所述漫射器衬底包括在所述LED阵列的一个或多个LED周围沿圆周延伸的纹理特征。
U:一种设备包括:漫射器衬底,所述漫射器衬底具有范围从约12微米到约100微米的平均厚度;以及光源,所述光源嵌套在所述漫射器衬底中,所述光源包括导电衬垫,所述光源被配置成经由所述导电衬垫被供电并且照射所述漫射器衬底。
V:一种显示设备包括:衬底;多个LED,每个LED具有第一侧和第二侧,每个LED经由所述LED的所述第一侧上的导电衬垫而附接到所述衬底,并且每个LED包括:第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧,以便在远离所述衬底的方向上反射光;以及第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的所述第二侧,所述第二反射元件设置成主要在朝向所述衬底的方向上反射光;以及漫射器,所述漫射器具有相对于所述衬底的表面与所述多个LED对准的光漫射特性,所述漫射器被对准成嵌套在所述多个LED的至少一个LED周围。
W:根据段落V的显示设备,其中所述多个LED包括在所述衬底上彼此间隔开的第一LED和第二LED,并且其中在所述第一LED与所述第二LED之间的所述衬底的一部分包括反射表面以便在远离所述衬底的方向上反射光。
X:根据段落V-W中的任一者的显示设备,其中所述多个LED包括在所述衬底上彼此间隔开的第一LED和第二LED。
Y:根据段落V-X中的任一者的显示设备,其中所述漫射器的材料包括硅胶、聚碳酸酯(PC)或者聚对苯二甲酸乙二醇酯(PET)中的至少一者。
Z:根据段落V-Y中的任一者的显示器,其中所述漫射器是由可模制聚合物膜形成。
AA:根据段落V-Z中的任一者的显示设备,所述显示设备还包括导电迹线,所述导电迹线设置在所述衬底上并且连接到所述多个LED中的每个LED的所述导电衬垫。
AB:根据段落V-AA中的任一者的显示设备,其中所述衬底是印刷电路板(PCB)。
AC:根据段落V-AB中的任一者的显示设备,其中所述第一反射元件或者所述第二反射元件中的至少一者至少部分跨越所述多个LED中的至少一者的宽度延伸。
AD:根据段落V-AC中的任一者的显示设备,其中所述第一反射元件或者所述第二反射元件中的至少一者跨越所述多个LED中的至少一个LED的整个宽度延伸。
AE:根据段落V-AD中的任一者的显示设备,其中所述第一反射元件或者所述第二反射元件中的至少一者形成为电流扩散层。
AF:根据段落V-AE中的任一者的显示设备,其中所述第一反射元件或者所述第二反射元件中的至少一者的材料是以下各者中的一者:铝、银、TiO2、SiO2、HfO2、Ta2O5,或者白色漫射性基于聚合物的反射材料。
AG:根据段落V-AF中的任一者的设备,其中所述多个LED中的至少一者具有小于50微米的厚度。
AH:根据段落V-AG中的任一者的设备,其中所述衬底、所述多个LED中的至少一者以及所述漫射器具有小于170微米的组合厚度。
AI:根据段落V-AH中的任一者的设备,其中所述漫射器的厚度尺寸分别与所述多个LED的高度尺寸大致相同。
AJ:根据段落V-AI中的任一者的设备,其中所述漫射器具有第一侧和第二侧,所述漫射器的所述第一侧包括反射表面以在远离所述衬底的方向上反射光。
AK:一种设备包括:漫射器衬底;以及LED阵列,所述LED阵列与所述漫射器衬底对准以便嵌套在所述漫射器衬底内,每个LED在所述LED的第一侧上包括导电衬垫,并且每个LED包括:第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧以便在横向于所述漫射器衬底的平面的第一方向上反射光;以及第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成在横向于所述漫射器衬底的平面并且与所述第一方向相对的第二方向上反射光,其中所述漫射器衬底的厚度尺寸不大于所述LED阵列的高度。
AL:根据段落AK的设备,所述设备还包括附接到所述LED的电路衬底。
AM:根据段落AK-AL中的任一者的设备,其中所述漫射器衬底包括纹理特征。
AN:根据段落AK-AM中的任一者的设备,其中所述漫射器衬底的表面包括在所述LED阵列的至少一个LED周围沿圆周延伸的纹理特征。
AO:根据段落AK-AN中的任一者的设备,其中特定纹理特征的最大尺寸的大小取决于所述至少一个LED与所述特定纹理特征之间的径向距离。
AP:根据段落AK-AO中的任一者的设备,其中与所述至少一个LED相距第一径向距离而设置的第一特定纹理特征的最大尺寸小于与所述至少一个LED相距第二径向距离而设置的第二特定纹理特征的最大尺寸,所述第一径向距离短于所述第二径向距离。
AQ:根据段落AK-AP中的任一者的设备,其中所述漫射器衬底的表面包括在所述LED阵列的每个LED周围沿圆周延伸的纹理特征,并且其中每个纹理特征的大小取决于距一个或多个LED的径向距离。
AR:根据段落AK-AQ中的任一者的设备,其中在两个相邻LED之间的距离上的一半处设置的特定纹理特征的深度和/或宽度大于在不足是所述两个相邻LED之间的一半的距离而定位的纹理特征的对应的深度和/或宽度。
AS:一种设备包括:电路衬底;显示面板,所述显示面板基本上平行于所述电路衬底而设置;漫射器衬底,所述漫射器衬底设置在所述电路衬底与所述显示面板之间;以及呈列和行的LED阵列,所述LED阵列跨越所述漫射器衬底的平面而嵌套以便与所述漫射器衬底对准并且附接到所述电路衬底,每个LED经由所述LED的第一侧上的导电衬垫进行附接,并且每个LED包括以下各者中的至少一者:第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧以便在横向于所述漫射器衬底的平面的第一方向上反射光;或者第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成在横向于所述漫射器衬底的平面并且与所述第一方向相对的第二方向上反射光,其中所述漫射器衬底包括在所述LED阵列的一个或多个LED周围沿圆周延伸的纹理特征。
结论
尽管已经用结构特征和/或方法动作特有的语言描述了若干实施方案,但应理解,权利要求不一定受限于所描述的特定特征或动作。而是,将特定特征和动作公开为实施所要求保护的主题的说明形式。

Claims (45)

1.一种设备,所述设备包括:
衬底;以及
LED,所述LED经由所述LED的第一侧上的导电衬垫而附接到所述衬底,所述LED包括:
第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧,以便在远离所述衬底的方向上反射光;以及
第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成主要在朝向所述衬底的方向上反射光。
2.根据权利要求1所述的设备,其中所述LED是第一LED,并且
其中所述设备还包括第二LED,所述第二LED设置在所述衬底上并且与所述第一LED间隔开,并且
其中在所述第一LED与所述第二LED之间的所述衬底的一部分包括反射表面,所述反射表面设置成在远离所述衬底的方向上反射光。
3.根据权利要求1所述的设备,其中所述LED是第一LED,并且
其中所述设备还包括第二LED,所述第二LED设置在所述衬底上并且与所述第一LED间隔开,并且
其中所述第二LED包括以下各者中的至少一者:第一反射元件,所述第一反射元件设置成邻近于所述第二LED的第一侧以便在远离所述衬底的方向上反射光;或者第二反射元件,所述第二反射元件设置成邻近于第二侧以便在朝向所述衬底的方向上反射光。
4.根据权利要求1所述的设备,所述设备还包括漫射器,所述漫射器与所述LED对准以便将所述LED嵌套在所述漫射器内,所述漫射器的材料包括硅胶、聚碳酸酯(PC)或者聚对苯二甲酸乙二醇酯(PET)中的至少一者。
5.根据权利要求1所述的设备,所述设备还包括漫射器,所述漫射器由可模制聚合物膜形成,所述漫射器设置成邻近于所述衬底与所述LED嵌套。
6.根据权利要求1所述的设备,所述设备还包括导电迹线,所述导电迹线设置在所述衬底上并且连接到所述LED的所述导电衬垫。
7.根据权利要求1所述的设备,其中所述衬底是印刷电路板(PCB)。
8.根据权利要求1所述的设备,其中所述第一反射元件或者所述第二反射元件中的至少一者至少部分跨越所述LED的宽度延伸。
9.根据权利要求1所述的设备,其中所述第一反射元件或者所述第二反射元件中的至少一者跨越所述LED的整个宽度延伸。
10.根据权利要求1所述的设备,其中所述第一反射元件或者所述第二反射元件中的至少一者形成为所述LED的电流扩散层。
11.根据权利要求1所述的设备,其中所述第一反射元件或者所述第二反射元件中的至少一者的材料是以下各者中的一者:铝、银、TiO2、SiO2、HfO2、Ta2O5,或者白色漫射性基于聚合物的反射材料。
12.一种设备,所述设备包括:
漫射器衬底;以及
LED阵列,所述LED阵列嵌套在所述漫射器衬底内,每个LED在所述LED的第一侧上包括导电衬垫,并且每个LED包括:
第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧以便在横向于所述漫射器衬底的平面的第一方向上反射光;以及
第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成在横向于所述漫射器衬底的平面并且与所述第一方向相对的第二方向上反射光。
13.根据权利要求12所述的设备,所述设备还包括附接到所述LED的电路衬底。
14.根据权利要求13所述的设备,其中所述漫射器衬底包括纹理特征。
15.根据权利要求12所述的设备,其中所述漫射器衬底的表面包括在所述LED阵列的至少一个LED周围沿圆周延伸的纹理特征。
16.根据权利要求所述15的设备,其中特定纹理特征的最大尺寸的大小取决于在所述至少一个LED与所述特定纹理特征之间的径向距离。
17.根据权利要求所述15的设备,其中与所述至少一个LED相距第一径向距离而设置的第一特定纹理特征的最大尺寸小于与所述至少一个LED相距第二径向距离而设置的第二特定纹理特征的最大尺寸,所述第一径向距离短于所述第二径向距离。
18.根据权利要求12所述的设备,其中所述漫射器衬底的表面包括在所述LED阵列的每个LED周围沿圆周延伸的纹理特征,并且
其中每个纹理特征的大小取决于距一个或多个LED的径向距离。
19.根据权利要求18所述的设备,其中在两个相邻LED之间的距离的一半处设置的特定纹理特征的深度和/或宽度大于在不及所述两个相邻LED之间的一半的距离处定位的纹理特征的对应的深度和/或宽度。
20.一种设备,所述设备包括:
电路衬底;
显示面板,所述显示面板基本上平行于所述电路衬底而设置;
漫射器衬底,所述漫射器衬底设置在所述电路衬底与所述显示面板之间;以及
呈列和行的LED阵列,所述LED阵列跨越所述漫射器衬底的平面而嵌套并且附接到所述电路衬底,每个LED经由所述LED的第一侧上的导电衬垫进行附接,每个LED包括以下各者中的至少一者:
第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧以便在横向于所述漫射器衬底的平面的第一方向上反射光,或者
第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成在横向于所述漫射器衬底的平面并且与所述第一方向相对的第二方向上反射光,
其中所述漫射器衬底包括在所述LED阵列的一个或多个LED周围沿圆周延伸的纹理特征。
21.一种设备,所述设备包括:
漫射器衬底,所述漫射器衬底具有范围从约12微米到约100微米的平均厚度;以及
光源,所述光源嵌套在所述漫射器衬底中,所述光源包括导电衬垫,所述光源被配置成经由所述导电衬垫被供电并且照射所述漫射器衬底。
22.一种显示设备,所述显示设备包括:
衬底;
多个LED,每个LED具有第一侧和第二侧,每个LED经由所述LED的所述第一侧上的导电衬垫而附接到所述衬底,并且每个LED包括:
第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧,以便在远离所述衬底的方向上反射光,以及
第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的所述第二侧,所述第二反射元件设置成主要在朝向所述衬底的方向上反射光;以及
漫射器,所述漫射器具有相对于所述衬底的表面与所述多个LED对准的光漫射特性,所述漫射器被对准成嵌套在所述多个LED中的至少一个LED周围。
23.根据权利要求22所述的显示设备,其中所述多个LED包括在所述衬底上彼此间隔开的第一LED和第二LED,并且
其中在所述第一LED与所述第二LED之间的所述衬底的一部分包括反射表面,以便在远离所述衬底的方向上反射光。
24.根据权利要求22所述的显示设备,其中所述多个LED包括在所述衬底上彼此间隔开的第一LED和第二LED。
25.根据权利要求22所述的显示设备,其中所述漫射器的材料包括硅胶、聚碳酸酯(PC)或者聚对苯二甲酸乙二醇酯(PET)中的至少一者。
26.根据权利要求22所述的显示器,其中所述漫射器是由可模制聚合物膜形成。
27.根据权利要求22所述的显示设备,所述显示设备还包括导电迹线,所述导电迹线设置在所述衬底上并且连接到所述多个LED中的每个LED的所述导电衬垫。
28.根据权利要求22所述的显示设备,其中所述衬底是印刷电路板(PCB)。
29.根据权利要求22所述的显示设备,其中所述第一反射元件或者所述第二反射元件中的至少一者至少部分跨越所述多个LED中的至少一者的宽度延伸。
30.根据权利要求22所述的显示设备,其中所述第一反射元件或者所述第二反射元件中的至少一者跨越所述多个LED中的至少一个LED的整个宽度延伸。
31.根据权利要求22所述的显示设备,其中所述第一反射元件或者所述第二反射元件中的至少一者形成为电流扩散层。
32.根据权利要求22所述的显示设备,其中所述第一反射元件或者所述第二反射元件中的至少一者的材料是以下各者中的一者:铝、银、TiO2、SiO2、HfO2、Ta2O5,或者白色漫射性基于聚合物的反射材料。
33.根据权利要求22所述的设备,其中所述多个LED中的至少一者具有小于50微米的厚度。
34.根据权利要求22所述的设备,其中所述衬底、所述多个LED中的至少一者以及所述漫射器具有小于170微米的组合厚度。
35.根据权利要求22所述的设备,其中所述漫射器的厚度尺寸分别与所述多个LED的高度尺寸大致相同。
36.根据权利要求22所述的设备,其中所述漫射器具有第一侧和第二侧,所述漫射器的所述第一侧包括反射表面以在远离所述衬底的方向上反射光。
37.一种设备,所述设备包括:
漫射器衬底;以及
LED阵列,所述LED阵列与所述漫射器衬底对准以便嵌套在所述漫射器衬底内,每个LED在所述LED的第一侧上包括导电衬垫,并且每个LED包括:
第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧以便在横向于所述漫射器衬底的平面的第一方向上反射光,以及
第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成在横向于所述漫射器衬底的平面并且与所述第一方向相对的第二方向上反射光,
其中所述漫射器衬底的厚度尺寸不大于所述LED阵列的高度。
38.根据权利要求37所述的设备,所述设备还包括附接到所述LED的电路衬底。
39.根据权利要求38所述的设备,其中所述漫射器衬底包括纹理特征。
40.根据权利要求37所述的设备,其中所述漫射器衬底的表面包括在所述LED阵列的至少一个LED周围沿圆周延伸的纹理特征。
41.根据权利要求40所述的设备,其中特定纹理特征的最大尺寸的大小取决于在所述至少一个LED与所述特定纹理特征之间的径向距离。
42.根据权利要求40所述的设备,其中与所述至少一个LED相距第一径向距离而设置的第一特定纹理特征的最大尺寸小于与所述至少一个LED相距第二径向距离而设置的第二特定纹理特征的最大尺寸,所述第一径向距离短于所述第二径向距离。
43.根据权利要求37所述的设备,其中所述漫射器衬底的表面包括在所述LED阵列的每个LED周围沿圆周延伸的纹理特征,并且
其中每个纹理特征的大小取决于距一个或多个LED的径向距离。
44.根据权利要求43所述的设备,其中在两个相邻LED之间的距离的一半处设置的特定纹理特征的深度和/或宽度大于在不及所述两个相邻LED之间的一半的距离处定位的纹理特征的对应的深度和/或宽度。
45.一种设备,所述设备包括:
电路衬底;
显示面板,所述显示面板基本上平行于所述电路衬底而设置;
漫射器衬底,所述漫射器衬底设置在所述电路衬底与所述显示面板之间;以及
呈列和行的LED阵列,所述LED阵列跨越所述漫射器衬底的平面而嵌套以便与所述漫射器衬底对准并且附接到所述电路衬底,每个LED经由所述LED的第一侧上的导电衬垫进行附接,并且每个LED包括以下各者中的至少一者:
第一反射元件,所述第一反射元件设置成邻近于所述LED的所述第一侧以便在横向于所述漫射器衬底的平面的第一方向上反射光,或者
第二反射元件,所述第二反射元件设置成邻近于所述LED的与所述LED的所述第一侧相对的第二侧,所述第二反射元件设置成在横向于所述漫射器衬底的平面并且与所述第一方向相对的第二方向上反射光,
其中所述漫射器衬底包括在所述LED阵列的一个或多个LED周围沿圆周延伸的纹理特征。
CN201780027031.8A 2015-03-20 2017-03-17 用于光漫射的方法和设备 Pending CN109154743A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562136434P 2015-03-20 2015-03-20
US201562146956P 2015-04-13 2015-04-13
US15/075,001 2016-03-18
US15/075,001 US9678383B1 (en) 2015-03-20 2016-03-18 Method and apparatus for light diffusion
PCT/US2017/023061 WO2017161330A1 (en) 2015-03-20 2017-03-17 Method and apparatus for light diffusion

Publications (1)

Publication Number Publication Date
CN109154743A true CN109154743A (zh) 2019-01-04

Family

ID=56925017

Family Applications (4)

Application Number Title Priority Date Filing Date
CN201680016956.8A Pending CN107431024A (zh) 2015-03-20 2016-03-18 用于半导体装置转印的方法
CN201910706964.0A Active CN110544666B (zh) 2015-03-20 2016-03-18 用于半导体装置转印的方法
CN202111618954.5A Pending CN114446858A (zh) 2015-03-20 2016-03-18 用于半导体装置转印的方法
CN201780027031.8A Pending CN109154743A (zh) 2015-03-20 2017-03-17 用于光漫射的方法和设备

Family Applications Before (3)

Application Number Title Priority Date Filing Date
CN201680016956.8A Pending CN107431024A (zh) 2015-03-20 2016-03-18 用于半导体装置转印的方法
CN201910706964.0A Active CN110544666B (zh) 2015-03-20 2016-03-18 用于半导体装置转印的方法
CN202111618954.5A Pending CN114446858A (zh) 2015-03-20 2016-03-18 用于半导体装置转印的方法

Country Status (8)

Country Link
US (24) US9633883B2 (zh)
EP (2) EP3780079A1 (zh)
JP (4) JP6931328B2 (zh)
KR (5) KR101937071B1 (zh)
CN (4) CN107431024A (zh)
ES (2) ES2837254T3 (zh)
SG (2) SG10202013250YA (zh)
WO (2) WO2016154061A1 (zh)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AT513747B1 (de) * 2013-02-28 2014-07-15 Mikroelektronik Ges Mit Beschränkter Haftung Ab Bestückungsverfahren für Schaltungsträger und Schaltungsträger
WO2015188172A2 (en) * 2014-06-06 2015-12-10 Rohinni, LLC Manufacture of circuit assembly with unpackaged semiconductor devices
JP6367084B2 (ja) * 2014-10-30 2018-08-01 株式会社東芝 半導体チップの接合方法及び半導体チップの接合装置
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
DE102016113328B4 (de) * 2015-08-31 2018-07-19 Besi Switzerland Ag Verfahren für die Montage von mit Bumps versehenen Halbleiterchips auf Substratplätzen eines Substrats
US20170140971A1 (en) * 2015-11-14 2017-05-18 Nachiket R. Raravikar Adhesive with tunable adhesion for handling ultra-thin wafer
KR102651054B1 (ko) * 2016-02-22 2024-03-26 삼성디스플레이 주식회사 전사 장치, 이를 이용한 전사 방법 및 표시 장치
US10309589B2 (en) * 2016-05-13 2019-06-04 Rohinni, LLC Light vectoring apparatus
CN106228913B (zh) * 2016-08-24 2022-12-30 京东方科技集团股份有限公司 转印设备及其转印方法
US20180118101A1 (en) 2016-10-28 2018-05-03 Ford Global Technologies, Llc Vehicle illuminated trim
US10141215B2 (en) * 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US9902314B1 (en) 2016-11-17 2018-02-27 Ford Global Technologies, Llc Vehicle light system
US10297478B2 (en) 2016-11-23 2019-05-21 Rohinni, LLC Method and apparatus for embedding semiconductor devices
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10504767B2 (en) * 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US9994089B1 (en) 2016-11-29 2018-06-12 Ford Global Technologies, Llc Vehicle curtain
US10118538B2 (en) 2016-12-07 2018-11-06 Ford Global Technologies, Llc Illuminated rack
US10422501B2 (en) 2016-12-14 2019-09-24 Ford Global Technologies, Llc Vehicle lighting assembly
US20180180795A1 (en) * 2016-12-22 2018-06-28 Dura Operating, Llc Light guide and method of creating a light guide by screen-printing
US10062588B2 (en) 2017-01-18 2018-08-28 Rohinni, LLC Flexible support substrate for transfer of semiconductor devices
DE102017101536B4 (de) * 2017-01-26 2022-06-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Selektieren von Halbleiterchips
US10672638B2 (en) * 2017-01-27 2020-06-02 International Business Machines Corporation Picking up irregular semiconductor chips
KR20190113939A (ko) * 2017-02-07 2019-10-08 로히니, 엘엘씨. 반도체 디바이스를 적층하기 위한 장치 및 방법
US20180248090A1 (en) * 2017-02-27 2018-08-30 Rohinni, LLC Semiconductor Device Circuit Apparatus Bonded with Anisotropic Conductive Film and Method of Direct Transfer for Making the Same
KR102008515B1 (ko) * 2017-03-13 2019-10-22 한미반도체 주식회사 반도체 제조장치 및 이의 제어방법
US20180361831A1 (en) 2017-06-14 2018-12-20 Ford Global Technologies, Llc Vehicle shade assembly
KR102369934B1 (ko) 2017-06-23 2022-03-03 삼성전자주식회사 칩 실장장치 및 이를 이용한 칩 실장방법
TW201917811A (zh) * 2017-06-26 2019-05-01 美商特索羅科學有限公司 發光二極體質量傳遞設備及製造方法
US11110864B2 (en) 2017-08-23 2021-09-07 Magna Mirrors Of America, Inc. Interior rearview mirror assembly with full screen video display
TWI713131B (zh) * 2017-10-13 2020-12-11 久元電子股份有限公司 晶粒轉移設備及使用該設備轉移晶粒的方法
JP6787613B2 (ja) * 2017-12-01 2020-11-18 株式会社新川 実装装置
CN108231651B (zh) * 2017-12-26 2020-02-21 厦门市三安光电科技有限公司 微元件转移装置和转移方法
KR101936356B1 (ko) * 2018-01-31 2019-01-08 주식회사 레다즈 마이크로 소자를 타겟 오브젝트에 전사하는 방법 및 장치
US10573543B2 (en) * 2018-04-30 2020-02-25 Cree, Inc. Apparatus and methods for mass transfer of electronic die
US10490525B1 (en) 2018-05-10 2019-11-26 International Business Machines Corporation High speed handling of ultra-small chips by selective laser bonding and debonding
US10410905B1 (en) * 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
US11069555B2 (en) 2018-09-03 2021-07-20 Assembleon B.V. Die attach systems, and methods of attaching a die to a substrate
US11134595B2 (en) 2018-09-05 2021-09-28 Assembleon B.V. Compliant die attach systems having spring-driven bond tools
US11062923B2 (en) 2018-09-28 2021-07-13 Rohinni, LLC Apparatus to control transfer parameters during transfer of semiconductor devices
US11094571B2 (en) * 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment
US11232968B2 (en) 2018-09-28 2022-01-25 Rohinni, LLC Variable pitch multi-needle head for transfer of semiconductor devices
US11001078B2 (en) 2018-09-28 2021-05-11 Rohinni, LLC Interchangeable guide head for transfer mechanism
US10796938B2 (en) 2018-10-17 2020-10-06 X Display Company Technology Limited Micro-transfer printing with selective component removal
US10573544B1 (en) * 2018-10-17 2020-02-25 X-Celeprint Limited Micro-transfer printing with selective component removal
TWI690980B (zh) * 2018-12-07 2020-04-11 台灣愛司帝科技股份有限公司 晶片移轉方法及晶片移轉設備
JP7417029B2 (ja) * 2018-12-14 2024-01-18 日亜化学工業株式会社 発光装置及びその製造方法
US10971471B2 (en) * 2018-12-29 2021-04-06 Micron Technology, Inc. Methods and systems for manufacturing semiconductor devices
CN109856857B (zh) * 2019-02-28 2021-11-12 重庆京东方光电科技有限公司 一种发光组件、背光源和显示面板
US11217471B2 (en) * 2019-03-06 2022-01-04 Rohinni, LLC Multi-axis movement for transfer of semiconductor devices
US10903267B2 (en) * 2019-04-04 2021-01-26 Bor-Jen Wu System and method for making micro LED display
JP6860044B2 (ja) 2019-08-02 2021-04-14 日亜化学工業株式会社 発光装置
US11282730B2 (en) 2019-08-02 2022-03-22 Rohinni, LLC Bridge apparatus for semiconductor die transfer
CN110911334B (zh) * 2019-11-13 2021-06-15 东莞普莱信智能技术有限公司 一种微型电子元件定位贴合装置及其方法
JP7002714B2 (ja) 2020-01-31 2022-02-04 日亜化学工業株式会社 発光モジュール、面状光源、及び発光モジュールの製造方法
CN111367124B (zh) * 2020-02-12 2021-06-01 武汉华星光电技术有限公司 配向膜转印版以及配向膜制造方法
US11817326B2 (en) * 2020-03-10 2023-11-14 Pyxis Cf Pte. Ltd. Precision reconstruction for panel-level packaging
TW202201592A (zh) * 2020-06-15 2022-01-01 賢昇科技股份有限公司 轉移設備及轉移工件的方法
TWI747327B (zh) * 2020-06-15 2021-11-21 吳伯仁 製造微發光二極體顯示器的系統與方法
TWI727853B (zh) * 2020-07-15 2021-05-11 歆熾電氣技術股份有限公司 晶片移轉系統與晶片移轉方法
US20220037185A1 (en) * 2020-07-30 2022-02-03 Cody Peterson Apparatus and method for orientation of semiconductor device die
CN112967956A (zh) * 2021-02-05 2021-06-15 惠州市聚飞光电有限公司 一种芯片包装结构、芯片转移方法及显示装置
TWI798595B (zh) * 2020-10-22 2023-04-11 均華精密工業股份有限公司 晶粒固晶裝置
US11889742B2 (en) * 2020-11-04 2024-01-30 Samsung Display Co., Ltd. Apparatus of manufacturing display device and method of manufacturing display device
TWI815066B (zh) * 2020-12-14 2023-09-11 萬潤科技股份有限公司 待濺鍍物件定位方法、裝置及施作設備
TWI766646B (zh) * 2021-04-16 2022-06-01 梭特科技股份有限公司 晶粒高速定位方法
TWI810673B (zh) * 2021-05-06 2023-08-01 台灣愛司帝科技股份有限公司 電子元件轉移裝置、電子元件轉移方法、以及發光二極體面板的製造方法
US11973054B2 (en) * 2021-05-06 2024-04-30 Stroke Precision Advanced Engineering Co., Ltd. Method for transferring electronic device
KR20230010156A (ko) 2021-07-09 2023-01-18 삼성디스플레이 주식회사 표시 장치
TWI812980B (zh) * 2021-07-21 2023-08-21 久元電子股份有限公司 轉移設備
KR20230030385A (ko) 2021-08-25 2023-03-06 레이저쎌 주식회사 전사 방식을 이용한 초소형 led 칩 리웍장치 및 리웍방법
KR20230064115A (ko) 2021-11-03 2023-05-10 엘지전자 주식회사 엘이디 전사 장치 및 그 제어방법
TWI800211B (zh) * 2021-11-05 2023-04-21 斯託克精密科技股份有限公司 用於將電子元件自撓性承載基板移轉至撓性目標基板之裝置以及轉移電子元件之方法
KR102534727B1 (ko) * 2021-12-15 2023-05-26 주식회사 선일기연 Pcb용 터미널 캐리어 자동 연속공급장치 및 그 자동 연속공급방법
KR102534723B1 (ko) * 2021-12-15 2023-05-26 주식회사 선일기연 Pcb용 터미널 캐리어 자동 배출장치 및 그 자동 배출방법
EP4227981A1 (en) 2022-02-15 2023-08-16 Nexperia B.V. Curved wafer stage
EP4227982A1 (en) 2022-02-15 2023-08-16 Nexperia B.V. Film frame carrier for a curved wafer stage
TWI820938B (zh) * 2022-09-29 2023-11-01 強茂股份有限公司 晶粒吸取輔助裝置
CN115642116B (zh) * 2022-11-04 2023-10-31 江苏希太芯科技有限公司 一种晶圆键合强度测量装置及测量方法
CN115996558B (zh) * 2023-03-23 2023-06-02 青岛育豪微电子设备有限公司 一种半导体贴装设备
CN117239022B (zh) * 2023-11-10 2024-01-30 迈为技术(珠海)有限公司 压合装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070086211A1 (en) * 2005-10-18 2007-04-19 Goldeneye, Inc. Side emitting illumination systems incorporating light emitting diodes
CN101295037A (zh) * 2007-04-27 2008-10-29 鸿富锦精密工业(深圳)有限公司 背光模组及其光学板
CN101308225A (zh) * 2007-05-18 2008-11-19 鸿富锦精密工业(深圳)有限公司 背光模组及其光学板
CN105278160A (zh) * 2015-10-29 2016-01-27 深圳市华星光电技术有限公司 背光单元、背光模组及显示装置

Family Cites Families (339)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS487643Y1 (zh) 1969-11-25 1973-02-27
US3724068A (en) 1971-02-25 1973-04-03 Du Pont Semiconductor chip packaging apparatus and method
US3887996A (en) 1974-05-01 1975-06-10 Gen Motors Corp iconductor loading apparatus for bonding
JPS52137983A (en) 1976-05-14 1977-11-17 Shinkawa Seisakusho Kk Mounting method of semiconductor tip by tapeecarrier system
DE3336606A1 (de) 1983-10-07 1985-04-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur mikropackherstellung
JPS61116846A (ja) * 1984-11-13 1986-06-04 Mitsubishi Electric Corp ダイボンド方法
US4859267A (en) * 1985-12-26 1989-08-22 The Boeing Company Method for consolidating composite materials
JPH088292B2 (ja) * 1987-08-31 1996-01-29 住友電気工業株式会社 チップ実装装置
EP0375293A3 (en) 1988-12-15 1991-01-02 Tama Denki Kogyo Kabushiki Kaisha Back-lighting apparatus for screen
US4906812A (en) 1988-12-22 1990-03-06 General Electric Company Fiber optic laser joining apparatus
JPH0332422U (zh) * 1989-08-08 1991-03-29
US5105255A (en) 1990-01-10 1992-04-14 Hughes Aircraft Company MMIC die attach design for manufacturability
US5270260A (en) * 1990-08-23 1993-12-14 Siemens Aktiengesellschaft Method and apparatus for connecting a semiconductor chip to a carrier system
US5348316A (en) 1992-07-16 1994-09-20 National Semiconductor Corporation Die collet with cavity wall recess
US5362681A (en) * 1992-07-22 1994-11-08 Anaglog Devices, Inc. Method for separating circuit dies from a wafer
US5461326A (en) 1993-02-25 1995-10-24 Hughes Aircraft Company Self leveling and self tensioning membrane test probe
US5670429A (en) 1993-06-30 1997-09-23 Rohm Co. Ltd. Process of conveying an encapsulated electronic component by engaging an integral resin projection
JPH0737912A (ja) * 1993-07-22 1995-02-07 Sharp Corp 半導体レーザチップ供給装置
WO1995026047A1 (en) 1994-03-18 1995-09-28 Hitachi Chemical Company, Ltd. Semiconductor package manufacturing method and semiconductor package
WO1996024938A1 (fr) 1995-02-08 1996-08-15 Hitachi Chemical Co., Ltd. Poudre composite conductrice, pate conductrice, procede de production de cette pate, circuit electrique et son procede de fabrication
JPH09181150A (ja) 1995-12-25 1997-07-11 Rohm Co Ltd 半導体チップのピックアップ装置及びこれを用いたピックアップ方法
US5789278A (en) 1996-07-30 1998-08-04 Micron Technology, Inc. Method for fabricating chip modules
JPH10112491A (ja) * 1996-10-04 1998-04-28 Sharp Corp チップ体のピックアップ方法
US5981314A (en) 1996-10-31 1999-11-09 Amkor Technology, Inc. Near chip size integrated circuit package
JPH10294493A (ja) 1997-02-21 1998-11-04 Toshiba Corp 半導体発光デバイス
JPH1123394A (ja) 1997-07-07 1999-01-29 Techno Excel Co Ltd 圧力センサ
JPH1140522A (ja) 1997-07-17 1999-02-12 Rohm Co Ltd 半導体ウエハの製造方法、この方法により作製された半導体ウエハ、半導体チップの製造方法、およびこの方法により製造された半導体チップ、ならびにこの半導体チップを備えたicカード
US6538254B1 (en) 1997-07-22 2003-03-25 Hitachi, Ltd. Method and apparatus for sample fabrication
US6180289B1 (en) 1997-07-23 2001-01-30 Nikon Corporation Projection-microlithography mask with separate mask substrates
WO1999005719A1 (de) * 1997-07-23 1999-02-04 Infineon Technologies Ag Vorrichtung und verfahren zur herstellung einer chip-substrat-verbindung
JPH1187370A (ja) 1997-09-05 1999-03-30 Oki Electric Ind Co Ltd 位置決め装置
US6085573A (en) 1998-01-20 2000-07-11 Mcms, Inc. Glass parts pick-up jig
JPH11220170A (ja) 1998-01-29 1999-08-10 Rohm Co Ltd 発光ダイオード素子
US6111324A (en) 1998-02-05 2000-08-29 Asat, Limited Integrated carrier ring/stiffener and method for manufacturing a flexible integrated circuit package
US6173750B1 (en) 1998-02-18 2001-01-16 Hover-Davis, Inc. Method and apparatus for removing die from a wafer and conveying die to a pickup location
US6323659B1 (en) 1998-04-29 2001-11-27 General Electric Company Material for improved sensitivity of stray field electrodes
US6091332A (en) 1998-06-09 2000-07-18 Motorola, Inc. Radio frequency identification tag having printed circuit interconnections
EP0964608A3 (en) * 1998-06-12 2001-09-05 Ford Motor Company Method for laser soldering
US6080336A (en) 1998-06-19 2000-06-27 Kyoto Elex Co., Ltd. Via-filling conductive paste composition
US6452694B1 (en) 1998-08-14 2002-09-17 3M Innovative Properties Company Design of text and graphic imagery on flag or tab media
US6352073B1 (en) 1998-11-12 2002-03-05 Kabushiki Kaisha Toshiba Semiconductor manufacturing equipment
DE19901623B4 (de) 1999-01-18 2007-08-23 Pac Tech-Packaging Technologies Gmbh Verfahren und Vorrichtung zur thermischen Verbindung von Anschlußflächen zweier Substrate
JP2000223549A (ja) 1999-01-29 2000-08-11 Canon Inc 基板搬送装置、基板搬送方法、基板搬送用ハンド機構、灰化処理装置及び灰化処理方法
KR100305750B1 (ko) 1999-03-10 2001-09-24 윤덕용 플라스틱 기판의 플립 칩 접속용 이방성 전도성 접착제의 제조방법
US6204092B1 (en) * 1999-04-13 2001-03-20 Lucent Technologies, Inc. Apparatus and method for transferring semiconductor die to a carrier
DE50010902D1 (de) 1999-04-20 2005-09-15 Siemens Ag Fluiddosiervorrichtung
JP2001068742A (ja) 1999-08-25 2001-03-16 Sanyo Electric Co Ltd 混成集積回路装置
FR2795199B1 (fr) * 1999-06-15 2001-10-26 Gemplus Card Int Dispositif et procede de fabrication de dispositifs comprenant au moins une puce montee sur un support
US8141240B2 (en) 1999-08-04 2012-03-27 Super Talent Electronics, Inc. Manufacturing method for micro-SD flash memory card
JP2001053341A (ja) * 1999-08-09 2001-02-23 Kazuo Kobayashi 面発光表示器
TWI285782B (en) 1999-09-08 2007-08-21 Toshiba Matsushita Display Tec Display device and method for producing the device
KR20010100868A (ko) * 2000-04-06 2001-11-14 이주하라 요죠우 광기록 헤드와 그 조립 방법
US6319754B1 (en) 2000-07-10 2001-11-20 Advanced Semiconductor Engineering, Inc. Wafer-dicing process
JP2002050670A (ja) * 2000-08-04 2002-02-15 Toshiba Corp ピックアップ装置及びピックアップ方法
JP2002062825A (ja) 2000-08-18 2002-02-28 Sony Corp 画像表示装置及びその製造方法
US6710456B1 (en) 2000-08-31 2004-03-23 Micron Technology, Inc. Composite interposer for BGA packages
WO2002031865A1 (en) 2000-10-13 2002-04-18 Emcore Corporation Method of making an electrode
JP4065655B2 (ja) 2000-11-09 2008-03-26 昭和電工株式会社 フリップチップ型半導体発光素子とその製造方法及び発光ダイオードランプ並びに表示装置、フリップチップ型半導体発光素子用電極
JP4021614B2 (ja) 2000-12-11 2007-12-12 株式会社東芝 半導体素子のピックアップ用治具、半導体素子のピックアップ装置、半導体素子のピックアップ方法、半導体装置の製造方法及び半導体装置の製造装置
KR100716871B1 (ko) 2001-04-11 2007-05-09 앰코 테크놀로지 코리아 주식회사 반도체패키지용 캐리어프레임 및 이를 이용한반도체패키지와 그 제조 방법
US6589809B1 (en) * 2001-07-16 2003-07-08 Micron Technology, Inc. Method for attaching semiconductor components to a substrate using local UV curing of dicing tape
JP4266106B2 (ja) 2001-09-27 2009-05-20 株式会社東芝 粘着性テープの剥離装置、粘着性テープの剥離方法、半導体チップのピックアップ装置、半導体チップのピックアップ方法及び半導体装置の製造方法
JP3745260B2 (ja) 2001-10-02 2006-02-15 ローム株式会社 半導体装置の製造方法
US6772509B2 (en) 2002-01-28 2004-08-10 Motorola, Inc. Method of separating and handling a thin semiconductor die on a wafer
US6889427B2 (en) * 2002-02-15 2005-05-10 Freescale Semiconductor, Inc. Process for disengaging semiconductor die from an adhesive film
US7312400B2 (en) 2002-02-22 2007-12-25 Fujikura Ltd. Multilayer wiring board, base for multilayer wiring board, printed wiring board and its manufacturing method
JP4244555B2 (ja) 2002-02-25 2009-03-25 東京エレクトロン株式会社 被処理体の支持機構
JP4411575B2 (ja) * 2002-04-25 2010-02-10 セイコーエプソン株式会社 電子装置の製造装置
JP4389148B2 (ja) 2002-05-17 2009-12-24 日立化成工業株式会社 導電ペースト
US7138711B2 (en) 2002-06-17 2006-11-21 Micron Technology, Inc. Intrinsic thermal enhancement for FBGA package
KR100687147B1 (ko) 2002-07-12 2007-02-27 샤프 가부시키가이샤 능동 소자 기판, 능동 소자 기판의 제조 방법, 능동 기능 소자, 다색 표시 장치, 및 표시 모듈
CA2494487A1 (en) 2002-08-02 2004-02-12 Symbol Technologies, Inc. Method and apparatus for high volume assembly of radio frequency identification tags
US7023347B2 (en) 2002-08-02 2006-04-04 Symbol Technologies, Inc. Method and system for forming a die frame and for transferring dies therewith
US6915551B2 (en) 2002-08-02 2005-07-12 Matrics, Inc. Multi-barrel die transfer apparatus and method for transferring dies therewith
US6637905B1 (en) 2002-09-26 2003-10-28 Agilent Technologies, Inc. Method and system for providing backlighting utilizing a luminescent impregnated material
TW200409378A (en) 2002-11-25 2004-06-01 Super Nova Optoelectronics Corp GaN-based light-emitting diode and the manufacturing method thereof
US20060180344A1 (en) 2003-01-20 2006-08-17 Shoji Ito Multilayer printed wiring board and process for producing the same
JP3739752B2 (ja) 2003-02-07 2006-01-25 株式会社 ハリーズ ランダム周期変速可能な小片移載装置
US7138629B2 (en) * 2003-04-22 2006-11-21 Ebara Corporation Testing apparatus using charged particles and device manufacturing method using the testing apparatus
US20040250417A1 (en) 2003-06-12 2004-12-16 Arneson Michael R. Method, system, and apparatus for transfer of dies using a die plate
KR100995640B1 (ko) 2003-07-07 2010-11-19 엘지디스플레이 주식회사 액정표시모듈
JP4156460B2 (ja) 2003-07-09 2008-09-24 Tdk株式会社 ワークのピックアップ方法及びその装置、実装機
JP3897115B2 (ja) 2003-07-09 2007-03-22 信越化学工業株式会社 半導体素子の封止方法
AU2003257713A1 (en) 2003-08-08 2005-02-25 Vichel Inc. Nitride micro light emitting diode with high brightness and method of manufacturing the same
JP4405211B2 (ja) * 2003-09-08 2010-01-27 パナソニック株式会社 半導体チップの剥離装置、剥離方法、及び半導体チップの供給装置
US20050057906A1 (en) 2003-09-12 2005-03-17 Seiichi Nakatani Connector sheet and wiring board, and production processes of the same
KR100719993B1 (ko) 2003-09-26 2007-05-21 히다치 가세고교 가부시끼가이샤 혼합 도전 분말 및 그의 이용
DE10349847B3 (de) * 2003-10-25 2005-05-25 Mühlbauer Ag Positionierungsvorrichtung und -Verfahren für die Übertragung elektronischer Bauteile
JP2005135977A (ja) 2003-10-28 2005-05-26 Renesas Technology Corp 半導体装置の製造方法及び半導体製造装置
US20050115602A1 (en) 2003-11-28 2005-06-02 Kyocera Corporation Photo-electric conversion cell and array, and photo-electric generation system
JP2005203225A (ja) * 2004-01-15 2005-07-28 Nippon Leiz Co Ltd 導光体および平面発光装置
JP2005222989A (ja) 2004-02-03 2005-08-18 Disco Abrasive Syst Ltd ウエーハの分割方法
US7279346B2 (en) 2004-03-31 2007-10-09 Cree, Inc. Method for packaging a light emitting device by one dispense then cure step followed by another
JP4397728B2 (ja) * 2004-04-21 2010-01-13 日東電工株式会社 直下型バックライト
US7632587B2 (en) 2004-05-04 2009-12-15 Angstrom Power Incorporated Electrochemical cells having current-carrying structures underlying electrochemical reaction layers
JP4632690B2 (ja) 2004-05-11 2011-02-16 スタンレー電気株式会社 半導体発光装置とその製造方法
JP2005327923A (ja) * 2004-05-14 2005-11-24 Alps Electric Co Ltd 導電接合膜貼着方法および導電接合膜貼着装置
CN101120433B (zh) 2004-06-04 2010-12-08 伊利诺伊大学评议会 用于制造并组装可印刷半导体元件的方法
US20050282355A1 (en) 2004-06-18 2005-12-22 Edwards David N High density bonding of electrical devices
JP4535792B2 (ja) 2004-07-01 2010-09-01 Nec液晶テクノロジー株式会社 バックライト及びそのバックライトを備えた液晶表示装置
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
KR100582056B1 (ko) 2004-07-05 2006-05-23 삼성전자주식회사 박형 칩 분리 장치 및 그를 이용한 박형 칩 분리 방법
JP4688594B2 (ja) 2004-08-06 2011-05-25 パナソニック株式会社 発光光源、照明装置及び表示装置
US8324725B2 (en) 2004-09-27 2012-12-04 Formfactor, Inc. Stacked die module
JP2006114691A (ja) 2004-10-14 2006-04-27 Disco Abrasive Syst Ltd ウエーハの分割方法
US7601272B2 (en) 2005-01-08 2009-10-13 Applied Materials, Inc. Method and apparatus for integrating metrology with etch processing
KR20060084256A (ko) 2005-01-19 2006-07-24 삼성전자주식회사 액정 표시 장치용 발광 다이오드 소자의 렌즈 조성물,이를 포함하는 발광 다이오드 소자, 백라이트 유닛 및액정 표시 장치
JP4624813B2 (ja) 2005-01-21 2011-02-02 ルネサスエレクトロニクス株式会社 半導体装置の製造方法および半導体製造装置
KR20060088817A (ko) 2005-01-28 2006-08-07 가부시키가이샤 이빔 기판처리장치 및 기판처리방법
US20060181600A1 (en) 2005-02-15 2006-08-17 Eastman Kodak Company Patterns formed by transfer of conductive particles
US20060225273A1 (en) 2005-03-29 2006-10-12 Symbol Technologies, Inc. Transferring die(s) from an intermediate surface to a substrate
CA2605209C (en) 2005-04-19 2013-10-22 Denki Kagaku Kogyo Kabushiki Kaisha Metal base circuit board, light-emitting diode and led light source unit
US7623034B2 (en) 2005-04-25 2009-11-24 Avery Dennison Corporation High-speed RFID circuit placement method and device
US7364983B2 (en) 2005-05-04 2008-04-29 Avery Dennison Corporation Method and apparatus for creating RFID devices
JP4902838B2 (ja) * 2005-05-27 2012-03-21 株式会社日立ハイテクインスツルメンツ 電子部品ピックアップ装置及びテーピング装置
JP4507985B2 (ja) * 2005-05-27 2010-07-21 パナソニック株式会社 チップのピックアップ装置およびピックアップ方法
CN101189625B (zh) 2005-05-31 2011-09-28 株式会社半导体能源研究所 半导体器件及其制造方法以及天线的制造方法
WO2007011068A1 (en) 2005-07-22 2007-01-25 Showa Denko K.K. Light-emitting diode light source
JP4379404B2 (ja) 2005-09-28 2009-12-09 日立ライティング株式会社 光源モジュール、液晶表示装置および光源モジュールの製造方法
JP4739900B2 (ja) 2005-10-13 2011-08-03 リンテック株式会社 転着装置及び転着方法
US7470120B2 (en) 2005-12-01 2008-12-30 Asm Assembly Automation, Ltd. Configurable die detachment apparatus
US20070131016A1 (en) 2005-12-13 2007-06-14 Symbol Technologies, Inc. Transferring die(s) from an intermediate surface to a substrate
US7375379B2 (en) * 2005-12-19 2008-05-20 Philips Limileds Lighting Company, Llc Light-emitting device
KR100835053B1 (ko) 2006-01-05 2008-06-03 삼성전기주식회사 반도체 발광 소자를 이용한 플렉서블 디스플레이 및 그제조 방법
JP2007194571A (ja) * 2006-01-20 2007-08-02 M Tec Kk 半導体チップの分離方法及び装置
JP2007193197A (ja) 2006-01-20 2007-08-02 Nsk Ltd 物品位置決め装置及び方法
KR20070077285A (ko) 2006-01-23 2007-07-26 삼성전자주식회사 백라이트 어셈블리 및 이를 갖는 표시장치
US8169185B2 (en) 2006-01-31 2012-05-01 Mojo Mobility, Inc. System and method for inductive charging of portable devices
WO2007126090A1 (ja) 2006-04-27 2007-11-08 Nec Corporation 回路基板、電子デバイス装置及び回路基板の製造方法
US7889316B2 (en) 2006-05-15 2011-02-15 Asml Netherlands B.V. Method for patterning a radiation beam, patterning device for patterning a radiation beam
WO2007143623A2 (en) 2006-06-02 2007-12-13 Stalford Harold L Methods and systems for micro machines
US10655792B2 (en) 2014-09-28 2020-05-19 Zhejiang Super Lighting Electric Appliance Co., Ltd. LED bulb lamp
FR2904508B1 (fr) 2006-07-28 2014-08-22 Saint Gobain Dispositif electroluminescent encapsule
US20080032484A1 (en) 2006-08-04 2008-02-07 Texas Instruments Incorporated Substrate bonding process with integrated vents
US20080060750A1 (en) * 2006-08-31 2008-03-13 Avery Dennison Corporation Method and apparatus for creating rfid devices using penetrable carrier
US7560303B2 (en) 2006-11-07 2009-07-14 Avery Dennison Corporation Method and apparatus for linear die transfer
JP2008130764A (ja) 2006-11-20 2008-06-05 Sharp Corp プリント配線板製造装置、プリント配線板、プリント配線板製造方法および電子機器
TW200825529A (en) * 2006-12-06 2008-06-16 Chi Lin Technology Co Ltd Light mixer and backlight module having it
JP4481293B2 (ja) 2006-12-22 2010-06-16 株式会社沖データ 発光表示装置
US8221583B2 (en) 2007-01-20 2012-07-17 Stats Chippac Ltd. System for peeling semiconductor chips from tape
JP2008173744A (ja) 2007-01-22 2008-07-31 Tokyo Electron Ltd 搬送システムの搬送位置合わせ方法
JP4693805B2 (ja) 2007-03-16 2011-06-01 株式会社東芝 半導体装置の製造装置及び製造方法
US9106056B1 (en) * 2007-04-25 2015-08-11 Stc.Unm Phase-coupled arrays of nanowire laser devices and method of controlling an array of such devices
US8415879B2 (en) 2007-05-31 2013-04-09 Nthdegree Technologies Worldwide Inc Diode for a printable composition
KR20080107651A (ko) 2007-06-07 2008-12-11 삼성전자주식회사 전사장치 및 이를 구비한 화상형성장치
RU2331951C1 (ru) 2007-07-24 2008-08-20 Закрытое акционерное общество "Светлана-Оптоэлектроника" Светодиод с двухслойной компаундной областью
US8702609B2 (en) 2007-07-27 2014-04-22 Meridian Cardiovascular Systems, Inc. Image-guided intravascular therapy catheters
US7757742B2 (en) 2007-07-31 2010-07-20 Asm Assembly Automation Ltd Vibration-induced die detachment system
JP4880561B2 (ja) * 2007-10-03 2012-02-22 新光電気工業株式会社 フリップチップ実装装置
US8198176B2 (en) 2007-10-09 2012-06-12 Hitachi Chemical Company, Ltd. Method for producing semiconductor chip with adhesive film, adhesive film for semiconductor used in the method, and method for producing semiconductor device
NL1036025A1 (nl) 2007-10-10 2009-04-15 Asml Netherlands Bv Method of transferring a substrate, transfer system and lithographic projection apparatus.
US8183582B2 (en) 2007-10-16 2012-05-22 LumaChip, Inc. Bare die semiconductor device configured for lamination
JP5150197B2 (ja) 2007-10-22 2013-02-20 株式会社ニフコ 車載シート用ダンパ装置およびダンパ装置を備えたスライド式シート
US9013367B2 (en) 2008-01-04 2015-04-21 Nanolumens Acquisition Inc. Flexible display
TW200947641A (en) * 2008-05-15 2009-11-16 Gio Optoelectronics Corp Die bonding apparatus
TWI416755B (zh) * 2008-05-30 2013-11-21 Epistar Corp 光源模組、其對應之光棒及其對應之液晶顯示裝置
US8755005B2 (en) 2008-09-24 2014-06-17 Koninklijke Philips N.V. Thin edge backlight with LEDS optically coupled to the back surface
US8361840B2 (en) 2008-09-24 2013-01-29 Eastman Kodak Company Thermal barrier layer for integrated circuit manufacture
JP2010087359A (ja) 2008-10-01 2010-04-15 Nec Corp ピックアップ装置
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US9119533B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US9123614B2 (en) * 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8372726B2 (en) * 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
KR20110089408A (ko) 2008-11-21 2011-08-08 히다치 가세고교 가부시끼가이샤 광전기 혼재기판 및 전자기기
WO2010070885A1 (ja) * 2008-12-15 2010-06-24 パナソニック株式会社 面状照明装置および液晶ディスプレイ装置
JP2010161155A (ja) * 2009-01-07 2010-07-22 Canon Machinery Inc チップ転写方法およびチップ転写装置
US8193555B2 (en) 2009-02-11 2012-06-05 Megica Corporation Image and light sensor chip packages
WO2010100505A1 (en) * 2009-03-05 2010-09-10 Iti Scotland Limited Light guides
WO2010114687A1 (en) 2009-03-30 2010-10-07 Megica Corporation Integrated circuit chip using top post-passivation technology and bottom structure technology
US8141612B2 (en) 2009-04-02 2012-03-27 Asm Assembly Automation Ltd Device for thin die detachment and pick-up
US8698977B2 (en) 2009-04-17 2014-04-15 Sharp Kabushiki Kaisha Lighting device and display device
TWI671811B (zh) 2009-05-12 2019-09-11 美國伊利諾大學理事會 用於可變形及半透明顯示器之超薄微刻度無機發光二極體之印刷總成
BRPI1013537A2 (pt) 2009-06-15 2016-04-12 Sharp Kk dispositivo de iluminação, dispositivo de exibição e receptor de televisão
US8110839B2 (en) 2009-07-13 2012-02-07 Luxingtek, Ltd. Lighting device, display, and method for manufacturing the same
WO2011016607A1 (ko) * 2009-08-02 2011-02-10 (주)큐엠씨 픽업장치 및 이를 포함하는 엘이디 칩 분류장치
TWM374648U (en) 2009-10-15 2010-02-21 Forward Electronics Co Ltd AC LED packaging structure
US20110123796A1 (en) 2009-11-20 2011-05-26 E.I. Dupont De Nemours And Company Interposer films useful in semiconductor packaging applications, and methods relating thereto
EP2501740B1 (en) 2009-11-20 2016-03-16 E. I. du Pont de Nemours and Company Thin film transistor compositions, and methods relating thereto
TWI506082B (zh) 2009-11-26 2015-11-01 Ajinomoto Kk Epoxy resin composition
JP5532863B2 (ja) 2009-11-27 2014-06-25 株式会社リコー 給紙装置および画像形成装置
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
WO2011084450A1 (en) 2009-12-16 2011-07-14 The Board Of Trustees Of The University Of Illinois Electrophysiology in-vivo using conformal electronics
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US9480133B2 (en) 2010-01-04 2016-10-25 Cooledge Lighting Inc. Light-emitting element repair in array-based lighting devices
EP2524165B1 (en) * 2010-01-15 2020-04-15 Express Imaging Systems, LLC Apparatus, method to change light source color temperature with reduced optical filtering losses
US20110180138A1 (en) 2010-01-25 2011-07-28 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US9390829B2 (en) 2010-01-25 2016-07-12 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US20110209751A1 (en) 2010-01-25 2011-09-01 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
US20110180137A1 (en) 2010-01-25 2011-07-28 Hitachi Chemical Company, Ltd. Paste composition for electrode and photovoltaic cell
WO2011111293A1 (ja) 2010-03-10 2011-09-15 パナソニック株式会社 Led封止樹脂体、led装置およびled装置の製造方法
KR101619466B1 (ko) 2010-03-26 2016-05-11 삼성전자주식회사 반도체 소자 실장 장치
JP5512888B2 (ja) 2010-06-29 2014-06-04 クーレッジ ライティング インコーポレイテッド 柔軟な基板を有する電子素子
JP2012015318A (ja) 2010-06-30 2012-01-19 Sharp Corp 発光装置の製造方法および発光装置
TW201210078A (en) 2010-08-25 2012-03-01 Foxsemicon Integrated Tech Inc Light emitting diode
US8198109B2 (en) 2010-08-27 2012-06-12 Quarkstar Llc Manufacturing methods for solid state light sheet or strip with LEDs connected in series for general illumination
US9032611B2 (en) * 2010-09-15 2015-05-19 Mycronic AB Apparatus for generating patterns on workpieces
US20120070570A1 (en) 2010-09-16 2012-03-22 Xerox Corporation Conductive thick metal electrode forming method
JP5740901B2 (ja) 2010-10-15 2015-07-01 ソニー株式会社 発光装置および表示装置
GB2484712A (en) 2010-10-21 2012-04-25 Optovate Ltd Illumination Apparatus
US8455895B2 (en) * 2010-11-08 2013-06-04 Bridgelux, Inc. LED-based light source utilizing asymmetric conductors
TWI408463B (zh) 2010-11-18 2013-09-11 Young Lighting Technology Corp 光源模組及照明裝置
US9000470B2 (en) 2010-11-22 2015-04-07 Cree, Inc. Light emitter devices
US8323857B2 (en) 2010-12-21 2012-12-04 Ultratech, Inc. Phase-shift mask with assist phase regions
JPWO2012101780A1 (ja) 2011-01-26 2014-06-30 日立コンシューマエレクトロニクス株式会社 液晶表示装置
JP2012156473A (ja) * 2011-01-28 2012-08-16 Adwelds:Kk 部品移載装置および部品移載方法
US9166126B2 (en) 2011-01-31 2015-10-20 Cree, Inc. Conformally coated light emitting devices and methods for providing the same
US9673363B2 (en) 2011-01-31 2017-06-06 Cree, Inc. Reflective mounting substrates for flip-chip mounted horizontal LEDs
KR20120096669A (ko) 2011-02-23 2012-08-31 주식회사 엘지실트론 웨이퍼 출하 편집 장치
JP2012182023A (ja) * 2011-03-01 2012-09-20 Panasonic Liquid Crystal Display Co Ltd 面光源装置、液晶表示装置、及びテレビジョン受信機
JP2012195350A (ja) * 2011-03-15 2012-10-11 Stanley Electric Co Ltd 発光装置及びその製造方法
JP2012209148A (ja) 2011-03-30 2012-10-25 Sony Corp 導電性粒子、導電性ペースト、及び、回路基板
KR101209446B1 (ko) 2011-04-28 2012-12-07 피에스아이 주식회사 초소형 led 소자 번들 및 그 제조방법
TWI444721B (zh) * 2011-04-29 2014-07-11 Au Optronics Corp 背光模組
US9765934B2 (en) 2011-05-16 2017-09-19 The Board Of Trustees Of The University Of Illinois Thermally managed LED arrays assembled by printing
DE102011104225B4 (de) * 2011-06-15 2017-08-24 Mühlbauer Gmbh & Co. Kg Vorrichtung und Verfahren zum Positionieren eines elektronischen Bauteils und / oder eines Trägers relativ zu einer Ausstoßeinrichtung
JP2013004815A (ja) 2011-06-17 2013-01-07 Sony Corp 光源回路ユニットおよび照明装置、並びに表示装置
US9666764B2 (en) 2012-04-09 2017-05-30 Cree, Inc. Wafer level packaging of multiple light emitting diodes (LEDs) on a single carrier die
KR101933549B1 (ko) * 2011-07-06 2018-12-28 삼성전자주식회사 레이저를 이용한 반도체 칩의 제거장치 및 그의 제거방법
US9034674B2 (en) 2011-08-08 2015-05-19 Quarkstar Llc Method and apparatus for coupling light-emitting elements with light-converting material
US8704262B2 (en) 2011-08-11 2014-04-22 Goldeneye, Inc. Solid state light sources with common luminescent and heat dissipating surfaces
WO2013036561A2 (en) 2011-09-07 2013-03-14 Cooledge Lighting, Inc. Broad-area lighting systems
EP2756225B1 (en) 2011-09-14 2017-05-17 Express Imaging Systems, LLC Apparatus, method to enhance color contrast in phosphor-based solid state lights
US8609446B2 (en) 2011-10-06 2013-12-17 Tsmc Solid State Lighting Ltd. Method and apparatus for accurate die-to-wafer bonding
US20130119538A1 (en) 2011-11-16 2013-05-16 Texas Instruments Incorporated Wafer level chip size package
US8794501B2 (en) 2011-11-18 2014-08-05 LuxVue Technology Corporation Method of transferring a light emitting diode
JP2013118244A (ja) * 2011-12-02 2013-06-13 Citizen Holdings Co Ltd 半導体発光装置及びそれを用いた照明装置
WO2013116623A1 (en) * 2012-02-02 2013-08-08 The Procter & Gamble Company Bidirectional light sheet
EP2626901A1 (en) 2012-02-10 2013-08-14 Oki Data Corporation Semiconductor light emitting apparatus, image displaying apparatus, mobile terminal, head-up display apparatus, image projector, head-mounted display apparatus, and image forming apparatus
JP5965199B2 (ja) 2012-04-17 2016-08-03 デクセリアルズ株式会社 異方性導電接着剤及びその製造方法、発光装置及びその製造方法
US9245875B2 (en) 2012-04-20 2016-01-26 Rensselaer Polytechnic Institute Light emitting diodes and a method of packaging the same
WO2013161061A1 (ja) * 2012-04-27 2013-10-31 富士機械製造株式会社 ダイ実装システムのウエハマップ管理装置及びダイ実装方法
KR101315939B1 (ko) 2012-04-30 2013-10-08 부경대학교 산학협력단 발광다이오드 패키지 및 그 제조방법
KR101525652B1 (ko) 2012-05-04 2015-06-03 삼성전기주식회사 도전성 수지 조성물, 이를 포함하는 적층 세라믹 커패시터 및 그 제조방법
JP5770677B2 (ja) 2012-05-08 2015-08-26 株式会社ディスコ ウェーハの加工方法
US9105492B2 (en) 2012-05-08 2015-08-11 LuxVue Technology Corporation Compliant micro device transfer head
US20130309792A1 (en) 2012-05-21 2013-11-21 Michael A. Tischler Light-emitting dies incorporating wavelength-conversion materials and related methods
JP2014135471A (ja) 2012-12-10 2014-07-24 Nitto Denko Corp 発光装置、発光装置集合体および電極付基板
US8415771B1 (en) 2012-05-25 2013-04-09 LuxVue Technology Corporation Micro device transfer head with silicon electrode
US9034754B2 (en) 2012-05-25 2015-05-19 LuxVue Technology Corporation Method of forming a micro device transfer head with silicon electrode
DE102012013370B4 (de) 2012-07-04 2017-11-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Montagevorrichtung und Verfahren zum Fixieren einer Nadel in einem Nadelhalter einer Ausstoßvorrichtung zum Abheben eines Chips von einem Trägermaterial
US8415768B1 (en) 2012-07-06 2013-04-09 LuxVue Technology Corporation Compliant monopolar micro device transfer head with silicon electrode
US8569115B1 (en) 2012-07-06 2013-10-29 LuxVue Technology Corporation Method of forming a compliant bipolar micro device transfer head with silicon electrodes
JP5968705B2 (ja) * 2012-07-13 2016-08-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8933433B2 (en) 2012-07-30 2015-01-13 LuxVue Technology Corporation Method and structure for receiving a micro device
US8704448B2 (en) 2012-09-06 2014-04-22 Cooledge Lighting Inc. Wiring boards for array-based electronic devices
US8791530B2 (en) 2012-09-06 2014-07-29 LuxVue Technology Corporation Compliant micro device transfer head with integrated electrode leads
JP5723337B2 (ja) 2012-09-07 2015-05-27 株式会社東芝 パターン形成方法及びパターン形成装置
US8835940B2 (en) 2012-09-24 2014-09-16 LuxVue Technology Corporation Micro device stabilization post
DE102012217957B4 (de) 2012-10-01 2014-10-09 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Mikro-LED-Matrix
US9651231B2 (en) 2012-10-04 2017-05-16 Guardian Industries Corp. Laminated LED array and/or products including the same
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
US9331230B2 (en) 2012-10-30 2016-05-03 Cbrite Inc. LED die dispersal in displays and light panels with preserving neighboring relationship
CN102931309B (zh) 2012-11-15 2015-04-01 安徽三安光电有限公司 一种倒装发光二极管及其制作方法
TWI474432B (zh) 2012-11-15 2015-02-21 Lextar Electronics Corp 晶粒定位裝置、具有晶粒定位裝置的晶粒定位系統與發光二極體顯示板的晶粒定位方法
JP5785532B2 (ja) 2012-11-30 2015-09-30 三井金属鉱業株式会社 銀コート銅粉及びその製造方法
US9236815B2 (en) 2012-12-10 2016-01-12 LuxVue Technology Corporation Compliant micro device transfer head array with metal electrodes
JP2014135470A (ja) 2012-12-10 2014-07-24 Nitto Denko Corp 発光装置、発光装置集合体および電極付基板
US9255001B2 (en) 2012-12-10 2016-02-09 LuxVue Technology Corporation Micro device transfer head array with metal electrodes
US9105714B2 (en) 2012-12-11 2015-08-11 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging bollards
US9166114B2 (en) 2012-12-11 2015-10-20 LuxVue Technology Corporation Stabilization structure including sacrificial release layer and staging cavity
US9689537B2 (en) 2012-12-13 2017-06-27 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device, illumination light source, and illumination device
US9314930B2 (en) 2012-12-14 2016-04-19 LuxVue Technology Corporation Micro pick up array with integrated pivot mount
US9391042B2 (en) 2012-12-14 2016-07-12 Apple Inc. Micro device transfer system with pivot mount
US9153171B2 (en) 2012-12-17 2015-10-06 LuxVue Technology Corporation Smart pixel lighting and display microcontroller
EP2940738B1 (en) 2012-12-28 2017-07-26 Kyocera Corporation Solar cell element and method for manufacturing solar cell element
JP6122299B2 (ja) 2013-01-15 2017-04-26 キヤノン株式会社 処理装置、処理方法、及びデバイスの製造方法
US9082936B2 (en) 2013-01-29 2015-07-14 Nthdegree Technologies Worldwide Inc. Transparent LED lamp for bidirectional lighting
US9142535B2 (en) 2013-01-31 2015-09-22 Nthdegree Technologies Worldwide Inc. Vertically printing LEDs in series
WO2014126927A1 (en) 2013-02-13 2014-08-21 The Board Of Trustees Of The University Of Illinois Injectable and implantable cellular-scale electronic devices
US9324692B2 (en) 2013-02-18 2016-04-26 Nthdegree Technologies Worldwide Inc. Transparent LED layer between phosphor layer and light exit surface of lamp
JP6161319B2 (ja) 2013-02-22 2017-07-12 ニスカ株式会社 転写装置及び転写方法
US9229597B2 (en) 2013-02-22 2016-01-05 Nthdegree Technologies Worldwide, Inc. Integrated capacitive touch screen and LED layer
US9308649B2 (en) 2013-02-25 2016-04-12 LuxVue Techonology Corporation Mass transfer tool manipulator assembly
US9099568B2 (en) 2013-03-14 2015-08-04 Nthdegree Technologies Worldwide Inc. Three-terminal printed devices interconnected as circuits
US8928014B2 (en) 2013-03-15 2015-01-06 Cooledge Lighting Inc. Stress relief for array-based electronic devices
US9484504B2 (en) * 2013-05-14 2016-11-01 Apple Inc. Micro LED with wavelength conversion layer
US9217541B2 (en) 2013-05-14 2015-12-22 LuxVue Technology Corporation Stabilization structure including shear release posts
US9136161B2 (en) 2013-06-04 2015-09-15 LuxVue Technology Corporation Micro pick up array with compliant contact
US9780270B2 (en) 2013-06-04 2017-10-03 Nthdegree Technologies Worldwide Inc. Molded LED light sheet
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
US8928021B1 (en) * 2013-06-18 2015-01-06 LuxVue Technology Corporation LED light pipe
US9035279B2 (en) 2013-07-08 2015-05-19 LuxVue Technology Corporation Micro device with stabilization post
US9296111B2 (en) 2013-07-22 2016-03-29 LuxVue Technology Corporation Micro pick up array alignment encoder
US9087764B2 (en) 2013-07-26 2015-07-21 LuxVue Technology Corporation Adhesive wafer bonding with controlled thickness variation
EP3028316A1 (en) 2013-07-31 2016-06-08 SABIC Global Technologies B.V. Process for making materials with micro-or nanostructured conductive layers
JP2015035532A (ja) * 2013-08-09 2015-02-19 シチズン電子株式会社 Led集合プレート及びこれを用いた発光装置
US9657903B2 (en) 2013-08-20 2017-05-23 Nthdegree Technologies Worldwide Inc. Geometrical light extraction structures for printed LEDs
US9324693B2 (en) 2013-09-09 2016-04-26 Nthdegree Technologies Worldwide Inc. Folded 3-D light sheets containing printed LEDs
KR101787926B1 (ko) 2013-10-15 2017-10-18 미쓰비시덴키 가부시키가이샤 반도체 소자의 제조 방법, 웨이퍼 마운트 장치
US9111984B2 (en) 2013-10-28 2015-08-18 Freescale Semiconductor Inc. Devices and methods of operation for separating semiconductor die from adhesive tape
GB2519587A (en) 2013-10-28 2015-04-29 Barco Nv Tiled Display and method for assembling same
WO2015084360A1 (en) 2013-12-05 2015-06-11 Hewlett-Packard Development Company, L.P. Regular expression matching
US9583466B2 (en) 2013-12-27 2017-02-28 Apple Inc. Etch removal of current distribution layer for LED current confinement
US20150204490A1 (en) 2014-01-18 2015-07-23 Nthdegree Technologies Worldwide Inc. Printed led layer with diffusing dielectric and conductor layers
US9508694B2 (en) * 2014-03-04 2016-11-29 Nthdegree Technologies Worldwide Inc. Multi-layer conductive backplane for LED light sheet segments
US20160172562A1 (en) 2014-01-31 2016-06-16 Sharp Laboratories Of America, Inc. Method for forming Circuit-on-Wire
US9281298B2 (en) 2014-02-10 2016-03-08 Nthdegree Technologies Worldwide Inc. Process for forming ultra-micro LEDS
US9583533B2 (en) 2014-03-13 2017-02-28 Apple Inc. LED device with embedded nanowire LEDs
US9318671B2 (en) * 2014-04-18 2016-04-19 Toshiba Corporation High efficiency light emitting diode package suitable for wafer level packaging
US10229630B2 (en) 2014-05-14 2019-03-12 The Hong Kong University Of Science And Technology Passive-matrix light-emitting diodes on silicon micro-display
US9318475B2 (en) 2014-05-15 2016-04-19 LuxVue Technology Corporation Flexible display and method of formation with sacrificial release layer
US9660151B2 (en) * 2014-05-21 2017-05-23 Nichia Corporation Method for manufacturing light emitting device
WO2015188172A2 (en) 2014-06-06 2015-12-10 Rohinni, LLC Manufacture of circuit assembly with unpackaged semiconductor devices
US9425151B2 (en) 2014-06-17 2016-08-23 Apple Inc. Compliant electrostatic transfer head with spring support layer
CN110010750B (zh) 2014-06-18 2021-11-09 艾克斯展示公司技术有限公司 微组装led显示器
TWI544471B (zh) 2014-06-19 2016-08-01 光芯科技股份有限公司 發光模組及照明模組
US9818018B2 (en) 2014-07-22 2017-11-14 Nanotek Instruments, Inc. Flexible fingerprint sensor materials and processes
US10615222B2 (en) 2014-08-21 2020-04-07 The University Of Hong Kong Flexible GAN light-emitting diodes
JP6296299B2 (ja) 2014-09-02 2018-03-20 パナソニックIpマネジメント株式会社 プラズマ処理装置およびプラズマ処理方法
JP6271380B2 (ja) 2014-09-12 2018-01-31 アルパッド株式会社 半導体装置の製造装置と半導体装置の製造方法
WO2016069766A1 (en) 2014-10-28 2016-05-06 The Regents Of The University Of California Flexible arrays of micro light emitting diodes using a photoelectrochemical (pec) liftoff technique
US9698134B2 (en) 2014-11-27 2017-07-04 Sct Technology, Ltd. Method for manufacturing a light emitted diode display
US9721931B2 (en) 2015-01-15 2017-08-01 Industrial Technology Research Institute Semiconductor light emitting device and fabricating method thereof
WO2016123065A1 (en) 2015-01-26 2016-08-04 Cooledge Lighting, Inc. Systems and methods for adhesive bonding of electronic devices
US9633883B2 (en) 2015-03-20 2017-04-25 Rohinni, LLC Apparatus for transfer of semiconductor devices
JPWO2016152321A1 (ja) 2015-03-20 2018-01-11 ソニーセミコンダクタソリューションズ株式会社 表示装置および照明装置ならびに発光素子および半導体デバイス
JP6650941B2 (ja) 2015-04-01 2020-02-19 ゴルテック.インク マイクロ発光ダイオードの転写方法、製造方法、装置及び電子機器
EP3271953B1 (en) 2015-05-21 2019-05-01 Goertek Inc. Transferring method and manufacturing method of micro-led
JP6546278B2 (ja) 2015-05-21 2019-07-17 ゴルテック.インク マイクロ発光ダイオードの搬送方法、製造方法、装置及び電子機器
WO2016200440A1 (en) 2015-06-11 2016-12-15 The Procter & Gamble Company Device and methods for applying compositions to surfaces
US9841548B2 (en) 2015-06-30 2017-12-12 Apple Inc. Electronic devices with soft input-output components
WO2017008253A1 (en) 2015-07-14 2017-01-19 Goertek. Inc Transferring method, manufacturing method, device and electronic apparatus of micro-led
US9640108B2 (en) 2015-08-25 2017-05-02 X-Celeprint Limited Bit-plane pulse width modulated digital display system
EP3218938B1 (en) 2015-08-18 2020-09-30 Weifang Goertek Microelectronics Co., Ltd. Repairing method and manufacturing method of micro-led
JP2018506166A (ja) 2015-08-18 2018-03-01 ゴルテック.インク マイクロ発光ダイオードの事前排除方法、製造方法、装置及び電子機器
US10297719B2 (en) 2015-08-27 2019-05-21 Mikro Mesa Technology Co., Ltd. Micro-light emitting diode (micro-LED) device
US9368549B1 (en) 2015-09-02 2016-06-14 Nthdegree Technologies Worldwide Inc. Printed mesh defining pixel areas for printed inorganic LED dies
US9801276B2 (en) 2015-11-25 2017-10-24 The Boeing Company Methof of forming an integrated composite structure
JP6608298B2 (ja) 2016-02-05 2019-11-20 川田工業株式会社 複合梁材及びその製造方法
US10193031B2 (en) 2016-03-11 2019-01-29 Rohinni, LLC Method for applying phosphor to light emitting diodes and apparatus thereof
KR20170106575A (ko) * 2016-03-11 2017-09-21 삼성전자주식회사 광원 모듈 및 이를 포함하는 조명 장치
US10141215B2 (en) 2016-11-03 2018-11-27 Rohinni, LLC Compliant needle for direct transfer of semiconductor devices
US10471545B2 (en) 2016-11-23 2019-11-12 Rohinni, LLC Top-side laser for direct transfer of semiconductor devices
US10504767B2 (en) 2016-11-23 2019-12-10 Rohinni, LLC Direct transfer apparatus for a pattern array of semiconductor device die
US10062588B2 (en) 2017-01-18 2018-08-28 Rohinni, LLC Flexible support substrate for transfer of semiconductor devices
KR20190113939A (ko) 2017-02-07 2019-10-08 로히니, 엘엘씨. 반도체 디바이스를 적층하기 위한 장치 및 방법
US20180248090A1 (en) 2017-02-27 2018-08-30 Rohinni, LLC Semiconductor Device Circuit Apparatus Bonded with Anisotropic Conductive Film and Method of Direct Transfer for Making the Same
US10410905B1 (en) 2018-05-12 2019-09-10 Rohinni, LLC Method and apparatus for direct transfer of multiple semiconductor devices
US11094571B2 (en) * 2018-09-28 2021-08-17 Rohinni, LLC Apparatus to increase transferspeed of semiconductor devices with micro-adjustment

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070086211A1 (en) * 2005-10-18 2007-04-19 Goldeneye, Inc. Side emitting illumination systems incorporating light emitting diodes
CN101295037A (zh) * 2007-04-27 2008-10-29 鸿富锦精密工业(深圳)有限公司 背光模组及其光学板
CN101308225A (zh) * 2007-05-18 2008-11-19 鸿富锦精密工业(深圳)有限公司 背光模组及其光学板
CN105278160A (zh) * 2015-10-29 2016-01-27 深圳市华星光电技术有限公司 背光单元、背光模组及显示装置

Also Published As

Publication number Publication date
JP6931328B2 (ja) 2021-09-01
US10615152B2 (en) 2020-04-07
US10157896B2 (en) 2018-12-18
EP3271937A4 (en) 2018-10-17
US10361176B2 (en) 2019-07-23
US10325885B2 (en) 2019-06-18
US20180233495A1 (en) 2018-08-16
EP3780079A1 (en) 2021-02-17
US20200235081A1 (en) 2020-07-23
EP3271937B1 (en) 2020-10-21
US20180261580A1 (en) 2018-09-13
US20200243491A1 (en) 2020-07-30
US9678383B1 (en) 2017-06-13
CN110544666B (zh) 2022-01-14
KR101937071B1 (ko) 2019-01-09
US10636770B2 (en) 2020-04-28
KR20210148391A (ko) 2021-12-07
US10290615B2 (en) 2019-05-14
JP2022024030A (ja) 2022-02-08
US20200251453A1 (en) 2020-08-06
US10490532B2 (en) 2019-11-26
JP6977020B2 (ja) 2021-12-08
WO2016154061A1 (en) 2016-09-29
US20180286838A1 (en) 2018-10-04
US20160276205A1 (en) 2016-09-22
KR20230124777A (ko) 2023-08-25
US20180053752A1 (en) 2018-02-22
US20180261579A1 (en) 2018-09-13
JP2019513300A (ja) 2019-05-23
US10373937B2 (en) 2019-08-06
US20180301439A1 (en) 2018-10-18
US9871023B2 (en) 2018-01-16
JP2020053708A (ja) 2020-04-02
US11152339B2 (en) 2021-10-19
US11562990B2 (en) 2023-01-24
SG11201708800UA (en) 2017-12-28
US11515293B2 (en) 2022-11-29
US11488940B2 (en) 2022-11-01
US20170256524A1 (en) 2017-09-07
US20170256523A1 (en) 2017-09-07
US20170140967A1 (en) 2017-05-18
US20190139945A1 (en) 2019-05-09
CN107431024A (zh) 2017-12-01
US10910354B2 (en) 2021-02-02
US9633883B2 (en) 2017-04-25
JP2018513554A (ja) 2018-05-24
ES2960229T3 (es) 2024-03-01
US20170140959A1 (en) 2017-05-18
US20190348405A1 (en) 2019-11-14
KR102332400B1 (ko) 2021-11-30
US20170365586A1 (en) 2017-12-21
US20170053901A1 (en) 2017-02-23
SG10202013250YA (en) 2021-01-28
US20180261581A1 (en) 2018-09-13
KR20170137720A (ko) 2017-12-13
KR20180126018A (ko) 2018-11-26
US10622337B2 (en) 2020-04-14
US9985003B2 (en) 2018-05-29
US20160276195A1 (en) 2016-09-22
KR102389676B1 (ko) 2022-04-22
US20170269430A1 (en) 2017-09-21
ES2837254T3 (es) 2021-06-29
US20200168587A1 (en) 2020-05-28
CN110544666A (zh) 2019-12-06
CN114446858A (zh) 2022-05-06
US10170454B2 (en) 2019-01-01
WO2017161330A1 (en) 2017-09-21
US10566319B2 (en) 2020-02-18
US10242971B2 (en) 2019-03-26
US20190237445A1 (en) 2019-08-01
US10615153B2 (en) 2020-04-07
EP3271937A1 (en) 2018-01-24
KR20190003859A (ko) 2019-01-09

Similar Documents

Publication Publication Date Title
CN109154743A (zh) 用于光漫射的方法和设备
TWI596406B (zh) 光導元件
JP5329548B2 (ja) 薄型側面発光ledを用いた薄型バックライト
US7309151B2 (en) Light emitting panel
TWI453468B (zh) 反光結構及光板
US8251529B2 (en) Thin illumination device, display device and luminary device
TW201040598A (en) Light guides
CN101971378A (zh) 发光装置、面发光装置以及显示装置
JP2004311353A (ja) 面状光源装置および該装置を用いた液晶表示装置
TW200841090A (en) Backlight unit and liquid crystal display device having the same
US20110038141A1 (en) Lateral emission led backlight for lcd
JP2005284283A (ja) 直下型バックライトモジュールと液晶表示装置
JP2009506501A (ja) 二機能性分光器光源付直下型バックライト
JP2008311026A (ja) 面光源装置
JP4594859B2 (ja) 照明装置及びこれを用いた画像表示装置
JP2010218839A (ja) El素子、液晶ディスプレイ用バックライト装置、照明装置、電子看板装置、ディスプレイ装置及び光取り出しフィルム
KR20080080975A (ko) Led 백라이트 모듈
TW200925516A (en) Light emitting unit
EP3430470B1 (en) Apparatus for light diffusion
TWI842942B (zh) 包括包含具有圓角的矩形反射鏡的背光照明以及製造背光照明的方法
JP4622316B2 (ja) バックライトおよび液晶表示装置
KR20140047854A (ko) 도광판 및 이를 포함하는 백라이트 유닛
KR20110023041A (ko) 발광소자 백라이트를 구비한 액정표시장치 및 그 제조방법
KR20120133555A (ko) 발광소자 어레이
KR20080018649A (ko) Led 백라이트 모듈

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20190104