TWI820938B - 晶粒吸取輔助裝置 - Google Patents

晶粒吸取輔助裝置 Download PDF

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TWI820938B
TWI820938B TW111137047A TW111137047A TWI820938B TW I820938 B TWI820938 B TW I820938B TW 111137047 A TW111137047 A TW 111137047A TW 111137047 A TW111137047 A TW 111137047A TW I820938 B TWI820938 B TW I820938B
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die
platform
air
wafer
auxiliary device
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何中雄
李季學
黃文良
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強茂股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68318—Auxiliary support including means facilitating the separation of a device or wafer from the auxiliary support
    • H01L2221/68322—Auxiliary support including means facilitating the selective separation of some of a plurality of devices from the auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer

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Abstract

本發明為一種晶粒吸取輔助裝置，供應用於已切割為複數晶粒之一晶圓，在該晶圓之底面係貼附一膠膜，其中，該晶粒吸取輔助裝置包含一平台，在該平台中設有複數個支撐部，於相鄰支撐部之間係形成有氣流通道；當晶圓氣密式地設置在該平台後，該支撐部可支撐該晶圓，於利用一外部抽氣裝置對該平台抽取空氣時，相鄰支撐部之間的氣流通道將形成負壓環境而迫使膠膜部分地自晶粒背面分離，以利吸嘴吸取該晶粒並避免對晶粒產生損傷，維持晶粒之完整性。

Description

晶粒吸取輔助裝置
本創作為一種使晶粒更易於從已完成切割之晶圓上取出，並降低對晶粒造成損傷之晶粒吸取輔助裝置。
請參考圖5A~5C所示，為現有晶粒吸取裝置之操作流程圖，在圖5A中為一已切割完成之晶圓100，在該晶圓100的背面黏附一膠膜200(tape)，該晶圓100及該膠膜200共同由一晶圓框架102固定，該晶圓100經過切割後形成多個獨立之晶粒101。
請參考圖5B所示，當要將每一個晶粒101獨立取出時，可先執行擴片作業(expanding)，將膠膜200撐開而加大相鄰晶粒101彼此之間的間距。請參考圖5C所示，在該晶圓100的下方設置有一推頂裝置300(ejector)，於該推頂裝置300內部具有一或多支的頂針301，該頂針301可從推頂裝置300中向上彈出以推頂所選位置的晶粒101，使該晶粒101從該膠膜200上略微分離。再配合使用設置於晶圓100上方的一吸嘴400，吸取被向上推頂的該晶粒101，使該晶粒101從該膠膜200上完全取出。
在擷取晶粒101的過程中，因為推頂裝置300由下往上推頂所選晶粒101的下方膠膜200使其延伸擴展，在該晶粒101周圍的相鄰晶粒101A可能會隨著膠膜200的擴展變形而與其它晶粒101B產生推擠或碰撞，導致在該晶粒101A、101B上產生缺口或破裂501(chip/crack)等瑕疵傷。請參考圖6A、6B所示，圖中顯示在吸取晶粒101的過程中，因為相鄰晶粒101產生碰撞C而在其邊緣或角落產生破裂501；除此之外，該推頂裝置300中的頂針301因快速彈出抵頂該晶粒101的背面，而在晶粒101的背面造成針痕502，或是使膠膜200上的黏膠殘留在該晶粒101的背面。
另一方面，由頂針301推頂晶粒101時，也有可能使得晶粒101發生傾斜，吸嘴400無法平整地吸取出晶粒101，甚至有可能吸嘴400與傾斜的晶粒101產生碰撞。
有鑑於現有吸取裝置容易在吸取晶粒的過程中對晶粒造成損傷，本發明係提供一種｢晶粒吸取輔助裝置｣，以期安全地吸取出晶粒，維持晶粒之完整性。
為達成前述目的，本發明之晶粒吸取輔助裝置，供應用於已切割為複數晶粒之一晶圓，在該晶圓之底面係貼附一膠膜，該晶粒吸取輔助裝置包含有： 一平台，係具有一氣室，於該平台中係形成至少一抽氣孔，該抽氣孔與該氣室相連通，其中，該抽氣孔供一外部抽氣裝置相連以抽取該氣室中的空氣； 複數個支撐部，係設於該平台中，其中任意相鄰之支撐部係具有氣流通道，該些氣流通道與該氣室連通； 其中，該晶圓係氣密式地設置在該平台，該些支撐部係用於抵頂該膠膜，於外部抽氣裝置抽取該氣室中的空氣時，該膠膜與該晶粒部分分離。
本發明另提供一種晶粒吸取輔助裝置，供應用於已切割為複數晶粒之一晶圓，在該晶圓之底面係貼附一膠膜，該晶粒吸取輔助裝置包含有： 一平台，係具有一氣室，於該平台中係形成至少一抽氣孔，該抽氣孔與該氣室相連通，其中，該抽氣孔供一外部抽氣裝置相連以抽取該氣室中的空氣 一載盤，係設置在該平台的氣室中，該載盤上具有複數個支撐部，其中任意相鄰之支撐部係具有氣流通道，該些氣流通道與該氣室連通； 其中，該晶圓係氣密式地設置在該平台且以該載盤支撐，該些支撐部係用於抵頂該膠膜，於外部抽氣裝置抽取該氣室中的空氣時，該膠膜與該晶粒部分分離。
本發明｢晶粒吸取輔助裝置｣係於外部抽氣裝置抽取氣室中的空氣時，令膠膜下方形成負壓環境，使得膠膜能與各個晶粒部分的分離，減少每個晶粒與膠膜的黏著力，且所有晶粒皆在共平面的水平狀態下供吸嘴取出，相鄰晶粒不會彼此摩擦碰撞，可降低每個晶粒產生缺口或破裂瑕疵的機率，以及避免在晶粒背面形成針痕。
本發明為一種晶粒吸取輔助裝置，可應用於如圖1所示的晶圓100，該晶圓100經過切割而形成多個晶粒101，於該晶圓100的背面貼附一層膠膜200。在一較佳實施例中，該晶圓100是已經預先完成擴片作業，相鄰晶粒101之間具有足夠空間供吸嘴吸取。
參考圖2A所示，本發明晶粒吸取輔助裝置1根據第一實施例，包含有一平台10A，該平台10A具有一頂面11，於該頂面11形成一開口110，自開口110向下形成有一氣室12，在該氣室11的底面設置多數個豎直排列且露出於該開口110的支撐部13，較佳的，該些支撐部13均勻分布在氣室11的底面並相隔等間距，於支撐部13之間形成連通的氣流通道14。在本實施例中各支撐部13為針狀，相鄰支撐部13之間的較佳間距依據晶粒101的尺寸而決定，使各個晶粒101可對應複數個支撐部13；在該平台10A中還形成至少一抽氣孔15並連通該氣室12，該抽氣孔15可供一外部抽氣裝置(圖未示)連接，以抽取該氣室11內部的空氣。
請參考圖2B所示，在該平台10A的頂面11上可供承載放置該晶圓100，使晶圓100的周圍固定在平台10A頂面，固定方式可採用任何已知的現有方式。當晶圓100固定在平台10A頂面後，該膠膜200可密合在該平台10A的頂面開口110，而各個支撐部13的頂端接觸該膠膜200。當外部抽氣裝置開啟後，氣室12內部的空氣可沿著該連通的氣流通道14及抽氣孔15被向外抽離(如箭頭所示)，因而在氣室12內部形成一負壓環境。該膠膜200受負壓吸引，在對應氣流通道14位置的膠膜200因為未受支撐部13抵頂，會從晶圓100的背面略微分離，因此減小了晶粒101與膠膜200之間的黏著力。
請參考圖2C所示，當膠膜200已經自晶粒101的背面部分分離後，各晶粒101仍保持在一水平橫置的狀態而未傾斜，此時可配合一吸嘴400向上吸取該晶粒101，將該晶粒101從該膠膜200上完全脫離，藉由重複移動該吸嘴400至不同位置，便可逐一將晶粒101自膠膜200上取出。
再請參考圖3A、3B所示，為本發明第二實施例的使用示意圖。該晶粒吸取輔助裝置1同樣包含有一平台10B，於該平台10B內部亦形成一氣室12，在該平台10B還形成至少一抽氣孔15並連通該氣室12；該平台10B的頂面11形成有複數個貫穿的氣流通道14而與該氣室12相互連通，在相鄰氣流通道14之間亦形成有複數個向上突出的支撐部13，該些支撐部13的頂端可接觸晶圓100背面的膠膜200；在一實施例中，可以在平台10B的頂面11形成數道縱橫交錯的溝槽16，而保留下來的平台10B頂面11自然構成支撐部13，而該氣流通道14係形成在溝槽16底面且連通下方的氣室12。同樣的，相鄰支撐部13之間的較佳間距依據晶粒101的尺寸而決定，以各個晶粒101可對應複數個支撐部13為較佳選擇。
圖3A顯示將晶圓100固定在平台10B的頂面11，固定方式可採用任何已知的現有方式。當晶圓100固定在平台10B後，該膠膜200可密合在該平台10B的頂面11，各個支撐部13的頂端接觸該晶圓100下方的膠膜200。當外部抽氣裝置開啟後，如圖3B所示，氣室12內部的空氣自抽氣孔15被向外抽離(如箭頭所示)因而在氣室11內部形成一負壓空間；同時膠膜200下方的空氣也會通過該些氣流通道14而被向外抽出，使得在溝槽16下方的膠膜200從晶圓100的背面略微分離，降低晶粒101與膠膜200之間的黏著力，以利於後續以吸嘴吸取該晶粒101，令該晶粒101從該膠膜200上完全脫離。
請參考圖4A~4E所示，在本發明第三實施例的晶粒吸取輔助裝置中包含有一平台10C及一載盤20。首先針對該載盤20加以介紹，該載盤20係以一金屬製的基板21作為基材，例如以銅基板為基材，在該基板21上形成多數個支撐部22，其中一種形成該支撐部22的較佳方式是在該基板21的平整表面上形成多道交錯排列的溝槽23，例如在基板的表面上以雷射光束沿著X軸及Y軸方向切削出該溝槽23，各溝槽23延伸連通至基板21的邊緣側面，未被雷射光束切割的基板21形成多個獨立的支撐部22，該些支撐部22的頂面共平面。
上述溝槽23的成型方式不限，凡是可對該基板21進行切削的方式皆可，例如透過刀具以機械切削方式形成溝槽23亦是可行。該溝槽23的交錯角度亦不限為上述X軸及Y軸的垂直方向交錯，以不同角度斜向交錯亦可形成該些支撐部22。
該平台10C形成有一氣室12，該載盤20可放置在氣室12內部，在該平台10C中形成有至少一抽氣孔15並連通該氣室12，該抽氣孔15可供一外部抽氣裝置連接，以抽取該氣室11內部的空氣。
圖4D表示晶圓100放置在該載盤20上的狀態，該膠膜200的周邊固定在該平台10C的頂面11，例如透過夾具將膠膜200的周圍壓合在平台10C的頂面11上，使膠模200的底面接觸該載盤20上的支撐部22。
圖4E表示由外部抽氣裝置對平台10C的氣室12抽取空氣後的狀態，膠膜200下方的空氣可沿著載盤20上交錯排列的溝槽23被抽離，再通過平台10C中的各個抽氣孔15向外排出，如箭頭示意的抽氣方向。當氣室12內部的空氣被向外抽離之後，氣室12內部形成一負壓空間，使得位在溝槽23上方的膠膜200被向下吸取而從晶圓100的背面略微分離，減少了晶粒101與膠膜200之間的貼附面積及黏著性，如此一來該晶粒101可更容被從該膠膜200以吸嘴取出。
請同時參考圖4C及4E所示，各溝槽23的寬度w1及深度d1可根據該膠膜200的厚度n而制定，例如該溝槽23的寬度w1與膠膜20厚度n的比例約為w1:n=2.5:1~3.5:1，較佳的可選用w1:n=3:1；該溝槽23的深度d1與膠膜20厚度n之比例可約略為d1:n=4:1~5:1。如此可以使溝槽23具有較足夠的空間供膠膜20附著，令膠膜20更容易從晶圓100背面脫離而附著在溝槽23的內面。
各支撐部22的寬度w2可根據晶粒101的尺寸大小而定，假設晶粒101的長度、寬度均為dc，該支撐部22的寬度w2與晶粒101長度之比約為w2:dc=1:3，使各晶粒101的尺寸能同時對應涵蓋至複數個支撐部22，如此設計可以確保當對氣室12抽離空氣時，即使膠膜200與晶粒101部分地分離，但每個晶粒101可由複數個支撐部22共同支撐，讓每個晶粒101維持在水平狀態而不傾斜。
整體而言，本發明｢晶粒吸取輔助裝置｣提供一負壓環境使膠膜與晶圓預先分離，使每個獨立晶粒更容易被取出，該晶粒吸取輔助裝置具有以下特點：
一、避免晶粒背面損傷：本發明不需透過頂針由下往上快速推頂晶粒，因此晶粒的背面不會因為撞擊產生針痕或黏附殘膠。
二、避免晶粒邊緣產生缺口或破裂：本發明在分離膠膜與晶圓的過程之中，晶粒皆維持為共平面的水平狀態，每個晶粒有數個支撐部同時支撐，即使利用吸嘴取出晶粒時，相鄰晶粒也不會因為傾斜而彼此摩擦碰撞，可降低每個晶粒產生缺口或破裂瑕疵的機率。
三、本發明可根據晶粒的尺寸，調整該些支撐部的排列密度，使每個晶粒均有數個支撐部共同支撐；在部分實施例中，可在基材切削出適當寬度及密度的溝槽，而形成所需之支撐部；又在部分實施例中，該些支撐部係形成在一載盤上，可根據不同尺寸之晶圓／晶粒而預先成型製作對應之載盤，在欲針對晶圓進行吸取作業時，可直接方便快速置換對應的載盤。
1:晶粒吸取輔助裝置 10A,10B,10C:平台 11:頂面開口 12:氣室 13:支撐部 14:氣流通道 15:抽氣孔 16:溝槽 20:載盤 21:基板 22:支撐部 23:溝槽 100:晶圓 101,101A,101B:晶粒 102:晶圓框架 200:膠膜 300:推頂裝置 301:頂針 400:吸嘴 501:破裂 502:針痕 n:膠膜厚度 d1:溝槽深度 w1:溝槽寬度 dc:晶粒長度 w2:支撐部寬度 C:碰撞
圖1：已完成切割之晶圓其側視示意圖。 圖2A：本發明｢晶粒吸取輔助裝置｣第一實施例之示意圖。 圖2B～2C：本發明｢晶粒吸取輔助裝置｣第一實施例之使用示意圖。 圖3A～3B：本發明｢晶粒吸取輔助裝置｣第二實施例之使用示意圖。 圖4A：本發明｢晶粒吸取輔助裝置｣第三實施例中之載盤立體外觀圖。 圖4B：本發明｢晶粒吸取輔助裝置｣第三實施例中之載盤上視平面圖。 圖4C：本發明｢晶粒吸取輔助裝置｣第三實施例中之載盤剖面圖。 圖4D~4E：本發明｢晶粒吸取輔助裝置｣第三實施例之使用示意圖。 圖5A~5C：現有晶粒吸取裝置之操作示意圖。 圖6A、圖6B：晶粒瑕疵之示意圖。
1:晶粒吸取輔助裝置
10C:平台
12:氣室
15:抽氣孔
21:基板
22:支撐部
23:溝槽
100:晶圓
101:晶粒
200:膠膜
n:膠膜厚度

Claims (10)

  1. 一種晶粒吸取輔助裝置，供應用於已切割為複數晶粒之一晶圓，在該晶圓之底面係貼附一膠膜，該晶粒吸取輔助裝置包含有：一平台，該平台具有一頂面，該平台的該頂面上可供承載放置該晶圓，且該平台的該頂面下方具有複數個氣流通道，該平台係具有一氣室，於該平台中係形成至少一抽氣孔，該抽氣孔與該氣室相連通，其中，該抽氣孔供一外部抽氣裝置相連以抽取該氣室中的空氣；複數個支撐部，係固定設於該平台中，其中任意相鄰之該支撐部之間係具有該些氣流通道，該些氣流通道與該氣室連通；其中，該晶圓係氣密式地設置在該平台，該些支撐部的頂端共同支撐該膠膜，於外部抽氣裝置抽取該氣室中的空氣時，該膠膜與該晶圓的該複數晶粒部分分離。
  2. 如請求項1所述之晶粒吸取輔助裝置，其中，於該平台的該頂面上係形成有一頂面開口，自該頂面開口向下延伸形成該氣室；該複數個支撐部係垂直分散排列在該氣室的底面。
  3. 如請求項2所述之晶粒吸取輔助裝置，其中，各該支撐部為一針狀支撐部。
  4. 如請求項1所述之晶粒吸取輔助裝置，其中，於該平台的該頂面上係突出形成該複數個的支撐部，在相鄰支撐部之間係形成溝槽；該氣流通道係貫穿該平台的該頂面，且連通形成在該頂面下方的該氣室。
  5. 如請求項1所述之晶粒吸取輔助裝置，其中，每個晶粒係對應由二個以上之支撐部共同支撐。
  6. 一種晶粒吸取輔助裝置，供應用於已切割為複數晶粒之一晶圓，在該晶圓之底面係貼附一膠膜，該晶粒吸取輔助裝置包含有： 一平台，係具有一氣室，於該平台中係形成至少一抽氣孔，該抽氣孔與該氣室相連通，其中，該抽氣孔供一外部抽氣裝置相連以抽取該氣室中的空氣一載盤，係固定設置在該平台的氣室中，該載盤包含有一基板，於該基板的表面上形成有沿不同方向交錯排列之複數溝槽，使相鄰的該溝槽之間的基板形成複數個支撐部，其中任意相鄰之該支撐部之間係具有氣流通道，該些氣流通道與該氣室連通；其中，該晶圓係氣密式地設置在該平台且以該載盤支撐，該些支撐部的頂端共同支撐該膠膜，於外部抽氣裝置抽取該氣室中的空氣時，該膠膜與該晶圓的該複數晶粒部分分離。
  7. 如請求項6所述之晶粒吸取輔助裝置，其中，該載盤的各該溝槽延伸貫通該基板的側面。
  8. 如請求項7所述之晶粒吸取輔助裝置，其中：該基板為一金屬基板；該複數溝槽係沿著X軸與Y軸方向交錯垂直排列，且該溝槽係以雷射光束切削形成。
  9. 如請求項6所述之晶粒吸取輔助裝置，其中，各溝槽具有一寬度w1及一深度d1，該膠膜具有一厚度n；該溝槽的寬度與膠膜的厚度之比例為w1：n=2.5：1~3.5：1；該溝槽的深度與膠膜的厚度之比例為d1：n=4：1~5：1。
  10. 如請求項6所述之晶粒吸取輔助裝置，其中，各支撐部具有一寬度w2，該晶粒的長度或寬度為dc；該支撐部的寬度與晶粒的長度或寬度之比例為w2：dc=1：3。
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