JP2018513554A - 半導体デバイスの転写方法 - Google Patents
半導体デバイスの転写方法 Download PDFInfo
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- JP2018513554A JP2018513554A JP2017549243A JP2017549243A JP2018513554A JP 2018513554 A JP2018513554 A JP 2018513554A JP 2017549243 A JP2017549243 A JP 2017549243A JP 2017549243 A JP2017549243 A JP 2017549243A JP 2018513554 A JP2018513554 A JP 2018513554A
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Abstract
Description
本出願は、2015年11月12日に出願された「Method and Apparatus for Transfer of Semiconductor Devices」と題する米国特許出願第14/939,896号の継続出願であり、それに対する優先権を主張するものであり、更には、米国仮特許出願第62/146,956号に対する優先権を主張し、米国仮特許出願第62/136,434号に対する優先権を主張するものである。これらの出願は、その全体が参照によって本明細書に組み込まれる。
図1は、装置100の実施形態を示す。この装置は、パッケージされていない半導体部品(または「ダイ」)をウェーハテープから製品基材に直接転写するために、または同様に、他の電気部品をキャリア基材、すなわち、1つ以上の電気部品を運搬する基材から製品基材に転写するために使用され得る。ウェーハテープは、本明細書において、半導体デバイスダイ基材、または単にダイ基材と呼ばれる場合もある。装置100は、製品基材搬送機構102及びウェーハテープ搬送機構104を備えてもよい。製品基材搬送機構102及びウェーハテープ搬送機構104のそれぞれは、互いに対して所望の整列位置に搬送されるようにそれぞれの基材を固定するフレームシステムまたは他の手段を備えてもよい。装置100は、転写機構106を更に備えてもよい。この機構は、図に示すように、ウェーハテープ搬送機構104の垂直上方に配置されてもよい。ある場合において、転写機構106は、ウェーハ基材にほとんど接触するように位置してもよい。加えて、装置100は、固定機構108を備えてもよい。固定機構108は、転写位置にある転写機構106と整列した状態で製品基材搬送機構102の垂直下方に配置されてもよい。この転写位置において、製品基材上にダイが配置され得る。後述するように、図2A及び2Bは、装置100の例示的な細部を示す。
前述したように、ニードルの先端300のプロファイル形状について図3に関して説明する。この図には、先端300のプロファイル形状の概略例が示されている。実施形態において、先端300は、テーパー部分304に隣接する側壁302、コーナー306、及び基端部308を含むニードルの端部と定義され得る。この先端は、ニードルの対向側まで横断する方向に伸びることができる。先端300の具体的なサイズ及び形状は、転写プロセスの要因に応じて変わる場合がある。このような要因としては、例えば、転写中のダイ220のサイズ、ならびに転写動作の速度及び衝撃力などがある。例えば、図3に見られる角度θは、ニードルの中心軸の長手方向とテーパー部分304との間で計測されるが、約10〜15°の範囲でもよく、コーナー306の半径rは約15ミクロン〜50ミクロン強の範囲でもよく、基端308の幅wは約0ミクロン〜100ミクロン(μm)強の範囲でもよく(ここでwは、転写中のダイ220の幅以下でもよい)、テーパー部分304の高さhは約1〜2mmの範囲でもよく(ここでhは、転写動作のストローク中、ニードルが移動する距離より大きくてもよい)、ニードル226の直径dは約1mmでもよい。
ニードル作動性能プロファイルの実施形態を図4に示す。すなわち、図4は、ウェーハテープ218の平面に対するニードル先端の高さを、それが時間と共に変化するように表すことにより、転写動作中に実行されるストロークパターンの例を示す。従って、図4の「0」の位置は、ウェーハテープ218の上面となり得る。更に、ニードルのアイドル時間及びニードルの準備時間が、プログラムされたプロセスに応じて、または第1のダイを転写してから、第2のダイに到達して転写できるようにするのに要する時間までの様々な期間に応じて変化し得るため、ストロークパターンのアイドル相及び準備相にて示した破線は、その時間が概算であるが、それより長い期間でも短い期間でもよいことを示す。更に、レーザーを使用する場合に示した実線は、これを用いて説明した実施形態のための例示的な時間であるが、レーザーのオン・オフ時間の実際の期間は、回路を形成する際に使用する材料(回路配線の材料の選択など)、製品基材の種類、所望の効果(回路配線を予め溶融すること、部分的な結合、完全な結合など)、結合箇所(すなわち、製品基材の上面)からのレーザーの距離、転写中のダイのサイズ、及びレーザーの出力/強度/波長などに応じて変化し得ることを理解すべきである。従って、図4に示したプロファイルに関する以下の説明は、ニードルプロファイルについての例示的な実施形態となり得る。
図5は、処理を終えた製品基材500の例示的な実施形態を示す。製品基材502は、第1の部分の回路配線504Aを含んでもよい。この回路配線は、電源がそれに印加されると、負電源端子または正電源端子として機能し得る。第2の部分の回路配線504Bは、第1部分の回路配線504Aに隣接して延在してもよく、電源がそれに印加されると、対応する正電源端子または負電源端子として作用し得る。
直接転写システム600の実施形態の簡略化した例を図6に示す。転写システム600は、パーソナルコンピュータ(PC)602(または、サーバ、データ入力装置、ユーザーインターフェースなど)、データ記憶装置604、ウェーハテープ機構606、製品基材機構608、転写機構610及び固定機構612を含んでもよい。ウェーハテープ機構606、製品基材機構608、転写機構610及び固定機構612のより詳細な説明についてはこれまで行ってきたため、これらの機構に関する具体的な詳細事項については、ここで繰り返さない。しかしながら、ウェーハテープ機構606、製品基材機構608、転写機構610及び固定機構612がPC602とデータ記憶装置604の間の対話にどのように関連するかについての概要を以下で説明する。
転写システム700のそれぞれの要素間の通信経路の概略については、以下のように説明することができる。
1つ以上のダイがウェーハテープから製品基材に直接転写される直接転写プロセスの実行方法800を図8に示す。本明細書に記載した方法800の各工程は、いかなる特定の順序でなくてもよく、従って所望の製品状態を達成するのに十分なあらゆる順序で実行されてもよい。方法800は、転写プロセスデータをPC及び/またはデータ記憶装置にロードする工程802を含んでもよい。転写プロセスデータは、ダイマップデータ、回路CADファイルデータ及びニードルプロファイルデータなどのデータを含んでもよい。
ダイをウェーハテープ(または、図9を簡単に説明するために「ダイ基材」とも呼ばれる、ダイを保持する他の基材)から製品基材に直接転写させる直接転写動作方法900を図9に示す。本明細書に記載した方法900の各工程は、どの特定の順序でなくてもよく、従って所望の製品状態を達成するのに十分なあらゆる順序で実行されてもよい。
図10に関して記載した実施形態において、上記の直接転写装置の構成要素のいくつかを、コンベア/組立ラインシステム1000(以下「コンベアシステム」)に実装してもよい。特に、図2A及び2Bは、製品基材210が、製品基材コンベアフレーム214によって保持されており、かつ製品基材テンショナーフレーム216によって張力がかけられていることを示している。装置200に関して示したモーター、レール及びギアで構成されるシステムを介して限られた領域内に製品基材コンベアフレーム214を固定することに代わるものとして、図10は、製品基材コンベアフレーム214がコンベアシステム1000を経由して搬送されていることを示す。このコンベアシステムにおいて、製品基材は、ある組立ライン方式プロセスを経る。搬送中の製品基材に対して実行される操作間の実際の搬送手段として、コンベアシステム1000は、それぞれが製品基材を保持する複数の製品基材コンベアフレーム214を順次搬送するための、一連のトラック、ローラー及びベルト1002、ならびに/または他の搬送装置を含んでもよい。
直接転写装置の別の実施形態において、図11A及び11Bから理解できるように、「光ストリング」を形成してもよい。装置1100の特徴の多くは、図2A及び2Bの装置200の特徴と実質的に類似したままでもよいが、製品基材搬送機構1102は、図11A及び11Bに示すように、製品基材212とは異なる製品基材1104を搬送するように構成されてもよい。具体的には、図2A及び2Bにおいて、製品基材搬送機構202は、コンベアフレーム214及びテンショナーフレーム216を含む。これらのフレームは、張力下でシート状の製品基材212を固定している。しかしながら、図11A及び11Bの実施形態において、製品基材搬送機構1102は、製品基材リールシステムを含んでもよい。
直接転写装置の更なる実施形態において、図12から理解できるように、装置1200は、ウェーハテープ搬送機構1202を備えてもよい。特に、図2A及び2Bに示したウェーハテープコンベアフレーム222及びテンショナーフレーム224の代わりに、ウェーハテープ搬送機構1202は、1つ以上のリール1204で構成されるシステムを含んで、装置1200の転写位置を通してダイ220を搬送して単一の基材にダイを転写してもよい。特に、各リール1204は、幅狭の、連続的な長尺状細片として形成された基材1206を含んでもよい。この細片には、当該細片の長さに沿ってダイ220が連続して取り付けられている。
図13は、直接転写装置1300の実施形態を示す。図2A及び2Bと同様に、製品基材搬送機構202は、ウェーハテープ搬送機構204に近接して配置されてもよい。しかしながら、搬送機構202と搬送機構204の間に空間が存在しており、この空間に、ウェーハテープ218から製品基材210へのダイ220の転写を実行するように転写機構1302が配置され得る。
A:半導体デバイスの製品基材への転写方法であって、前記半導体デバイスを載置した半導体ウェーハの第1の表面に面するように前記製品基材の表面を位置決めすることと;転写機構を前記半導体ウェーハの第2の表面に係合させるように前記転写機構を作動させることであって、前記半導体ウェーハの前記第2の表面は前記半導体ウェーハの前記第1の表面の反対側にあり、前記転写機構を前記作動させることは、前記半導体ウェーハの前記第1の表面に配置された特定の半導体デバイスの位置に対応する、前記半導体ウェーハの前記第2の表面上の位置に対してピンを押圧させることと、前記ピンを静止位置に格納することとを含む、前記転写機構を前記作動させることと;前記半導体ウェーハの前記第2の表面から前記特定の半導体デバイスを取り外すことと;前記特定の半導体デバイスを前記製品基材に取り付けることとを含む、前記方法。
構造的な特徴及び/または方法論的な行為に特有の言葉でいくつかの実施形態を説明してきたものの、特許請求の範囲は、記載した特定の特徴及び行為に必ずしも限定されるものではないことを理解すべきである。むしろ、特定の特徴及び行為は、特許請求される主題を実施することの例示的な形態として開示される。更に、用語「may(してもよい)」の使用は、必ずしも全ての実施形態とは限らないが、1つ以上の各種実施形態に使用されている特定の特徴の実現性を示すために本明細書において使用される。
Claims (20)
- 半導体デバイスの製品基材への転写方法であって、
前記半導体デバイスを載置した半導体ウェーハの第1の表面に面するように前記製品基材の表面を位置決めすることと、
前記半導体ウェーハの第2の表面に転写機構を係合させるように前記転写機構を作動させることであって、前記半導体ウェーハの前記第2の表面は前記半導体ウェーハの前記第1の表面の反対側にあり、前記転写機構を前記作動させることは、
前記半導体ウェーハの前記第1の表面に配置された特定の半導体デバイスの位置に対応する前記半導体ウェーハの前記第2の表面上の位置に対してピンを押圧させることと、
前記ピンを静止位置に格納することと
を含む、前記転写機構を前記作動させることと、
前記半導体ウェーハの前記第2の表面から前記特定の半導体デバイスを取り外すことと、
前記特定の半導体デバイスを前記製品基材に取り付けることと
を含む、転写方法。 - 前記製品基材の前記表面に回路配線を配置することを更に含み、
前記製品基材に前記特定の半導体デバイスを前記取り付けることは、前記特定の半導体デバイスを前記回路配線と接触させて取り付けることを含む、請求項1に記載の方法。 - 前記特定の半導体は第1の特定の半導体デバイスであり、
前記転写方法は、前記製品基材の前記表面に取り付けるべき第2の特定の半導体デバイスを整列させるように、前記製品基材の前記表面に対して前記半導体ウェーハの前記第1の表面を再度位置決めすることを更に含む、請求項1に記載の方法。 - 前記特定の半導体デバイスを前記取り付ける前に前記製品基材の前記表面に導電性材料を付加することを更に含み、前記特定の半導体デバイスを前記製品基材に前記取り付けることは、前記特定の半導体デバイスを前記導電性材料と接触して取り付けることを含む、請求項1に記載の方法。
- 前記特定の半導体デバイスを前記取り付けて前記特定の半導体デバイスを接触させた後に前記製品基材の前記表面に導電性材料を付加することを更に含む、請求項1に記載の方法。
- 前記製品基材の前記表面に導電性材料を付加し、前記導電性材料を介して前記特定の半導体デバイスを前記製品基材に取り付けることを更に含む、請求項1に記載の方法。
- 前記取り付けられた特定の半導体デバイスを覆う封止材を設けることを更に含む、請求項1に記載の方法。
- 電気部品の転写方法であって、
キャリア基材の第1の表面を、前記キャリア基材の第2の表面が転写機構のスラストピンから離れて配置されるように前記転写機構に対して位置決めすることであって、前記キャリア基材の前記第2の表面には、前記キャリア基材に取り付けられた電気部品が搭載されている、前記位置決めすることと、
前記転写機構を作動させて前記キャリア基材の前記第1の表面上の転写位置に対して前記スラストピンを押圧させることであって、前記キャリア基材の前記第1の表面上の前記転写位置は、前記キャリア基材の前記第2の表面に取り付けられた特定の電気部品の位置に対応する、前記押圧させることと、
前記キャリア基材の前記第2の表面から前記特定の電気部品を取り外しさせることと
を含む、電気部品の転写方法。 - 表面に回路配線を有する製品基材を前記キャリア基材に対して整列させることを更に含み、
前記特定の半導体デバイスを前記取り外しさせることは、前記特定の電気部品が前記製品基材上の前記回路配線に接触するように前記スラストピンを前記転写位置に対してある程度押圧することを含む、請求項8に記載の方法。 - 前記特定の電気部品を前記製品基材上の前記回路配線に取り付けることを更に含む、請求項9に記載の方法。
- 前記転写機構が前記特定の電気部品を前記キャリア基材から前記製品基材に直接転写させるように前記キャリア基材を前記製品基材に対して所定の位置に固定することを更に含む、請求項8に記載の方法。
- 前記キャリア基材から製品基材上の対応する位置に前記特定の電気部品を転写するように前記キャリア基材の位置を前記製品基材に対して制御することを更に含む、請求項8に記載の方法。
- 前記キャリア基材上に配置された複数の電気部品の相対位置に関するデータを制御システムにロードすることを更に含み、
前記キャリア基材の前記位置を前記制御することは、前記特定の電気部品を前記製品基材に転写するために前記特定の電気部品の前記位置を決定することを含む、請求項12に記載の方法。 - 前記キャリア基材の前記位置を前記制御することは、前記製品基材への連続的な転写のために前記転写位置を前記複数の電気部品のうちの複数の電気部品に整列させるように前記キャリア基材の前記位置を前記転写機構に対して繰り返しシフトすることを更に含む、請求項12に記載の方法。
- 導電性回路配線を可撓性ポリマー基材の表面に施すことと、
パッケージされていない半導体デバイスを半導体ウェーハから前記可撓性ポリマー基材に直接転写することであって、
前記直接転写することは、前記半導体ウェーハの第2の表面に配置された前記パッケージされていない半導体デバイスの位置に対応する前記半導体ウェーハの第1の表面上の位置に対してピンを押圧させることを含み、前記押圧によって前記パッケージされていない半導体デバイスを前記導電性回路配線に接触させる、前記直接転写することと
を含む方法。 - 前記パッケージされていない半導体デバイスを前記可撓性ポリマー基材上の前記導電性回路配線に接続することを更に含む、請求項15に記載の方法。
- 前記ピンに近接して配置されたカメラによって前記半導体ウェーハの前記第1の表面上の前記位置を決定することを更に含む、請求項15に記載の方法。
- 前記半導体ウェーハの前記第1の表面上の前記位置に対して前記ピンを前記押圧させることは、前記半導体ウェーハが取り付けられているウェーハテープからの前記パッケージされていない半導体デバイスの分離を開始させることを含む、請求項15に記載の方法。
- 前記半導体ウェーハの前記第1の表面上の前記位置に対して前記ピンを前記押圧させることにより、前記パッケージされていない半導体デバイスの周囲の前記ウェーハテープの領域において前記ウェーハテープを局所的に撓ませる、請求項18に記載の方法。
- 前記転写することは、前記パッケージされていない半導体デバイスの表面の導電性パッドを、前記可撓性ポリマー基材上の回路配線に整列させるように位置決めすることを更に含む、請求項15に記載の方法。
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JP2022024030A (ja) * | 2015-03-20 | 2022-02-08 | ロヒンニ リミテッド ライアビリティ カンパニー | 半導体デバイスの転写方法 |
JP2021535629A (ja) * | 2018-09-03 | 2021-12-16 | アセンブリオン ビー.ブイ. | ダイ取り付けシステム、およびダイを基板に取り付ける方法 |
JP7344627B2 (ja) | 2018-09-03 | 2023-09-14 | アセンブリオン ビー.ブイ. | ダイ取り付けシステム、およびダイを基板に取り付ける方法 |
JP2022500881A (ja) * | 2018-09-28 | 2022-01-04 | ロヒンニ リミテッド ライアビリティ カンパニー | 半導体デバイスを転写するための可変ピッチマルチニードルヘッド |
JP7254170B2 (ja) | 2018-09-28 | 2023-04-07 | ロヒンニ リミテッド ライアビリティ カンパニー | 半導体デバイスを転写するための可変ピッチマルチニードルヘッド |
JP7455118B2 (ja) | 2018-09-28 | 2024-03-25 | ロヒンニ リミテッド ライアビリティ カンパニー | 半導体デバイスの転写中に転写パラメータを制御する方法および装置 |
JP2022525005A (ja) * | 2019-03-06 | 2022-05-11 | ロヒンニ リミテッド ライアビリティ カンパニー | 半導体デバイスを転写するための多軸移動 |
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