TWI690980B - 晶片移轉方法及晶片移轉設備 - Google Patents
晶片移轉方法及晶片移轉設備 Download PDFInfo
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Abstract
本發明公開一種晶片移轉方法及晶片移轉設備,晶片移轉方法包括:首先,(A)提供一承載有多個晶片的承載膜以及一具有黏著層的基板;接著,(B)將該承載膜與該基板相對設置,以使得該些晶片面向該黏著層;然後,(C)利用一頂抵件部分穿過該承載膜以頂抵至少一該晶片,而使得該晶片脫離該承載膜而轉貼附在該黏著層上;最後,(D)重覆步驟(C),以將其餘的該些晶片依序脫離該承載膜而轉貼附在該黏著層上。
Description
本發明涉及一種移轉方法及移轉設備,特別是涉及一種晶片移轉方法及晶片移轉設備。
一般要將所製得的晶片陣列移轉到所要應用的不同尺寸的基板或面板上時,由於製程繁複,因此,造成移轉所需時間亢長的問題。
故,如何通過結構設計或流程的改良,來提升晶片移轉的效率及速度,已成為本發明所屬技術領域所欲解決的重要課題之一。
本發明所要解決的技術問題在於,針對現有技術的不足提供一種晶片移轉方法及晶片移轉設備。
為了解決上述的技術問題,本發明所採用的其中一技術方案是,提供一種晶片移轉方法,其包括:首先,(A)提供一承載有多個晶片的承載膜以及一具有黏著層的基板;接著,(B)將該承載膜與該基板相對設置,以使得該些晶片面向該黏著層;然後,(C)利用一頂抵件部分穿過該承載膜以頂抵至少一該晶片,而使得該晶片脫離該承載膜而轉貼附在該黏著層上;最後,(D)重覆步驟(C),以將其餘的該些晶片依序脫離該承載膜而轉貼附在該黏著層上。
為了解決上述的技術問題,本發明所採用的另外一技術方案是,提供一種晶片移轉設備,其包括一第一承載板、一第二承載板以及一頂抵件,該第一承載板與該第二承載板彼此相對應且延著垂直方向設置。其中,一承載有多個晶片的承載膜設置在該第
一承載板,一具有黏著層的基板設置在該第二承載板,該承載膜面向該基板,以使得該些晶片面向該黏著層。其中,該頂抵件部分穿過該承載膜而頂抵至少一該晶片,以使得該晶片脫離該承載膜而轉貼附在該黏著層上。
為了解決上述的技術問題,本發明所採用的另外再一技術方案是,提供一種晶片移轉設備,其包括一第一承載板、一第二承載板以及一頂抵件。第一承載板用於承載一承載有多個晶片的承載膜。第二承載板用於承載一具有黏著層的基板。頂抵件設置在該第一承載板的上方或者下方。其中,該第一承載板、該第二承載板以及該頂抵件延著垂直方向設置。
本發明的其中一有益效果在於,本發明所提供的晶片移轉方法,其能通過“(A)提供一承載有多個晶片的承載膜以及一具有黏著層的基板”、“(B)將該承載膜與該基板相對設置,以使得該些晶片面向該黏著層”、“(C)利用一頂抵件部分穿過該承載膜以頂抵至少一該晶片,而使得該晶片脫離該承載膜而轉貼附在該黏著層上”以及“(D)重覆步驟(C),以將其餘的該些晶片依序脫離該承載膜而轉貼附在該黏著層上”的技術方案,以提升晶片移轉的效率及速度。
本發明的另外一有益效果在於,本發明所提供的晶片移轉設備,其能通過“該第一承載板與該第二承載板彼此相對應且延著垂直方向設置”、“一承載有多個晶片的承載膜設置在該第一承載板”、“一具有黏著層的基板設置在該第二承載板”、“該承載膜面向該基板,以使得該些晶片面向該黏著層”以及“,該頂抵件部分穿過該承載膜而頂抵至少一該晶片,以使得該晶片脫離該承載膜而轉貼附在該黏著層上”的技術方案,以提升晶片移轉的效率及速度。
本發明的另外再一有益效果在於,本發明所提供的晶片移轉設備,其能通過“第一承載板用於承載一承載有多個晶片的承載
膜”、“第二承載板用於承載一具有黏著層的基板”、“頂抵件設置在該第一承載板的上方或者下方”、以及“該第一承載板、該第二承載板以及該頂抵件延著垂直方向設置”的技術方案,以提升晶片移轉的效率及速度。
為使能更進一步瞭解本發明的特徵及技術內容,請參閱以下有關本發明的詳細說明與圖式,然而所提供的圖式僅用於提供參考與說明,並非用來對本發明加以限制。
1‧‧‧晶片移轉設備
11‧‧‧第一承載板
12‧‧‧第二承載板
13‧‧‧頂抵件
14‧‧‧殼體
141‧‧‧貫穿開孔
142‧‧‧抽真空孔
2‧‧‧晶片
21‧‧‧底面
22‧‧‧頂面
3‧‧‧承載膜
4‧‧‧黏著層
5‧‧‧基板
a‧‧‧預設間距
b‧‧‧預定間距
圖1為本發明第一實施例的晶片移轉方法的流程示意圖。
圖2為本發明第一實施例的承載膜的第一俯視示意圖。
圖3為本發明第一實施例的基板的俯視示意圖。
圖4為本發明第一實施例的晶片移轉方法的步驟(B)的流程示意圖。
圖5為本發明第一實施例的晶片移轉方法的步驟(C)的流程示意圖。
圖6為本發明第一實施例的晶片移轉方法的步驟(D)的流程示意圖。
圖7為本發明第一實施例的基板的第二俯視示意圖。
圖8為本發明第二實施例的晶片移轉設備的結構示意圖。
圖9為本發明第三實施例的晶片移轉設備的結構示意圖。
圖10為本發明第四實施例的晶片移轉設備的結構示意圖。
以下是通過特定的具體實施例來說明本發明所公開有關“晶片移轉方法及晶片移轉設備”的實施方式,本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用,本說明書中的各項細節也可基於不同觀點與應用,在不悖離本發明的構思下進行各種修
改與變更。另外,本發明的圖式僅為簡單示意說明,並非依實際尺寸的描繪,事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容,但所公開的內容並非用以限制本發明的保護範圍。
應當可以理解的是,雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號,但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件,或者一信號與另一信號。另外,本文中所使用的術語“或”,應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。
[第一實施例]
參閱圖1至圖7所示,本發明第一實施例提供一種晶片移轉方法,其至少包括下列幾個步驟:
首先,配合圖1至圖3所示,本發明的晶片移轉方法提供一承載有多個晶片2的承載膜3以及一具有黏著層4的基板5(步驟(A))。
舉例來說,配合圖1至圖3所示,在本發明的步驟(A)中,可通過承載膜3(如藍色PVC膠膜(Blue Tape),但不以此為限)承載多個晶片2,相鄰的晶片2間具有一預設間距a;其中,承載膜3可為藍色PVC膠膜(Blue Tape),晶片2可為發光二極體或其他類型的晶片,但不以此為限。並且,基板5上可形成一黏著層4;其中,基板5可為玻璃基板,黏著層4可為UV膠、熱固膠或是AB膠,但不以此為限。然而,本發明不以上述所舉的例子為限。
接著,配合圖1至圖4所示,將承載膜3與基板5相對設置,以使得該些晶片2面向黏著層4(步驟(B))。舉例來說,在本發明的步驟(B)中,承載膜3可位於基板5的下方,並且承載膜3承載多個晶片2的一面與基板5的黏著層4相面對。然而,本發明不
以上述所舉的例子為限。
然後,配合圖1、圖4及圖5所示,利用一頂抵件13部分穿過承載膜3以頂抵至少一個晶片2,而使得晶片2脫離承載膜3而轉貼附在黏著層4上(步驟(C))。
舉例來說,配合圖1、圖4及圖5所示,在本發明的步驟(C)中,也就是進行晶片2移轉時,可利用頂抵件13穿過承載膜3,而將與頂抵件13相對應的晶片2頂抵到接觸黏著層4,使得晶片2脫離承載膜3而轉貼附在黏著層4上。其中,在頂抵件13頂抵晶片2時,晶片2可以是在底面21完全脫離承載膜3後,頂面22才瞬間轉貼附在黏著層4上;或者,晶片2也可以是在底面21是在部分脫離承載膜3時,晶片2的頂面22才轉貼附在黏著層4上。此外,頂抵件13的材質可為金屬或塑膠,並且,頂抵件13用於頂抵晶片2的部位可呈尖角或鈍角。然而,本發明不以上述所舉的例子為限。
最後,配合圖1、圖5、圖6及圖7所示,重覆步驟(C),以將其餘的該些晶片2依序脫離承載膜3而轉貼附在黏著層4上(步驟(D))。
舉例來說,配合圖1、圖5、圖6及圖7所示,在本發明的步驟(D)中,可通過重複上述步驟(C),即重複利用頂抵件13穿過承載膜3,而依序或隨機頂抵承載膜3上的該些晶片2,以使晶片2轉貼附在黏著層4上。此外,承載膜3可通過承載器具而相對於基板5進行水平偏移,且基板5也可通過承載器具而相對於承載膜3進行水平偏移。因此,在承載膜3上的該些晶片2都移轉至基板5的黏著層4上後,黏著層4上相鄰的晶片2間具有一預定間距b,且預定間距b大於預設間距a;其中,預設間距a與預定間距b的距離參數可依據使用者或製造商而定。然而,本發明不以上述所舉的例子為限。
[第二實施例]
請參閱圖8所示,並請一併配合圖1至圖7,本發明第二實施例所提供的晶片移轉方法,與第一實施例的晶片移轉方法略為相近,因此,相似的流程步驟不再贅述。進一步來說,根據圖8與圖4比較所示,本發明第二實施例與第一實施例的差異在於,本實施在步驟(B)中,承載膜3位於基板5的上方。舉例來說,本實施的晶片移轉方法同樣也可提供承載有多個晶片2的承載膜3以及具有黏著層4的基板5,但將基板5設置於承載膜3的下方,基板5上的黏著層4面向承載膜3,並且,承載膜3上的多個晶片2面向黏著層4。接著,再執行步驟(C)以及步驟(D),以將承載膜3上的多個晶片2轉貼附在黏著層4上。
更進一步地,配合圖1至圖8所示,本發明第二實施例還提供一種晶片移轉設備1,其包括一第一承載板11、一第二承載板12以及一頂抵件13,第一承載板11與第二承載板12彼此相對應且延著垂直方向設置。其中,一承載有多個晶片2的承載膜3設置在第一承載板11,一具有黏著層4的基板5設置在第二承載板12,承載膜3面向基板5,以使得該些晶片2面向黏著層4。其中,頂抵件13部分穿過承載膜3而頂抵至少一個晶片2,以使得晶片2脫離承載膜3而轉貼附在黏著層4上。
舉例來說,配合圖8所示,本發明的晶片移轉設備1可通過第一承載板11以吸附或夾持等方式固定承載膜3,以及通過第二承載板12以吸附或夾持等方式固定基板5,並且,第一承載板11與第二承載板12彼此相對應且延著垂直方向設置;其中,第一承載板11與第二承載板12的固定方式並不限於上述所舉的例子,並且,第一承載板11可相對於第二承載板12進行水平位移,且第二承載板12也可相對於第一承載板11進行水平位移。接著,再通過頂抵件13以穿過承載膜3以及頂抵晶片2的方式,而依序將承載膜3上的多個晶片2移轉到基板5的黏著層4。其中,頂抵
件13可對應於第一承載板11而被能活動地設置。然而,本發明不以上述所舉的例子為限。
值得注意的是,本實施例的晶片移轉設備1可也用於承載膜3位於基板5下方的實施態樣,並不限於上述實施例。
此外,配合圖8所示,本發明第二實施例再提供一種晶片移轉設備1,其包括一第一承載板11、一第二承載板12以及一頂抵件13。第一承載板11用於承載一承載有多個晶片2的承載膜3。第二承載板12用於承載一具有黏著層4的基板5。頂抵件13設置在第一承載板11的上方或者下方。其中,第一承載板11、第二承載板12以及頂抵件13延著垂直方向設置。
[第三實施例]
請參閱圖9所示,並請一併配合圖1至圖8,本發明第三實施例所提供的晶片移轉設備,與第二實施例的晶片移轉設備略為相近,因此,相似的元件作動不再贅述。進一步來說,根據圖9與圖8比較所示,本發明第三實施例與第二實施例的差異在於,本實施的晶片移轉設備1還進一步包括:一殼體14,其具有一貫穿開孔141,頂抵件13穿過貫穿開孔141以頂抵晶片2。
舉例來說,配合圖9所示,本發明的晶片移轉設備1進一步還可包括一殼體14,其可對應於頂抵件13設置,並具有一貫穿開孔141,頂抵件13能活動地位於殼體14中。因此,晶片移轉設備1在執行步驟(C)或步驟(D)時,可先通過殼體14抵觸承載膜3。接著,頂抵件13可通過穿過貫穿開孔141而刺穿承載膜3,進而穿過承載膜3而頂抵晶片2。此外,本發明的晶片移轉設備1也可配合一抽真空機,通過貫穿開孔141提供一吸附力,而使殼體14可吸附承載膜3。然而,本發明不以上述所舉的例子為限。
值得注意的是,本實施例的晶片移轉設備1可也用於承載膜3位於基板5下方的實施態樣,並不限於上述實施例。
[第四實施例]
請參閱圖10所示,並請一併配合圖1至圖9,本發明第四實施例提供一種晶片移轉方法,與第一實施例及第二實施例的晶片移轉方法略為相近,因此,相似的流程步驟不再贅述。進一步來說,根據圖10與圖4比較所示,本發明第四實施例與第一實施例及第二實施例的差異在於,本實施的在步驟(C)中,承載膜3被一具有一貫穿開孔141以及多個抽真空孔142的殼體14所接觸,頂抵件13穿過貫穿開孔141以頂抵晶片2,貫穿開孔141與該些抽真空孔142進行抽真空而使得殼體14緊密貼附在承載膜3上。
舉例來說,配合圖10所示,本實施的晶片移轉方法在步驟(C)中,頂抵件13能活動地位於殼體14中,殼體14具有一貫穿開孔141以及多個抽真空孔142。因此,通過殼體14接觸承載膜3,並利用貫穿開孔141與該些抽真空孔142進行抽真空,以使承載膜3緊密貼附在殼體14。接著,通過頂抵件13穿過貫穿開孔141而穿破承載膜3,進而通過穿過承載膜3而頂抵晶片2。然而,本發明不以上述所舉的例子為限。
更進一步地,本發明第四實施例還提供一種晶片移轉設備1,與第二實施例的晶片移轉設備1略為相近,因此,相似的元件作動不再贅述。進一步來說,根據圖10與圖8比較所示,本發明第四實施例與第二實施例的差異在於,晶片移轉設備1還進一步包括:一殼體14,其具有一貫穿開孔141以及多個抽真空孔142;其中,當殼體14接觸承載膜3,且貫穿開孔141與該些抽真空孔142進行抽真空時,殼體14緊密貼附在承載膜3上。
舉例來說,配合圖10所示,本發明的晶片移轉設備1進一步還可包括一殼體14,其可對應於頂抵件13設置,殼體14具有一貫穿開孔141以及多個抽真空孔142,頂抵件13能活動地位於殼體14中。因此,晶片移轉設備1在執行步驟(C)或步驟(D)時,可
先通過殼體14抵觸承載膜3。接著,通過貫穿開孔141與該些抽真空孔142進行抽真空,以使承載膜3被吸附,而緊密貼附在殼體14上。接下來,頂抵件13可通過穿過貫穿開孔141而刺穿承載膜3,進而穿過承載膜3而頂抵晶片2。此外,本發明的晶片移轉設備1也可配合一抽真空機,通過貫穿開孔141以及該些抽真空孔142提供一吸附力,而使殼體14可吸附承載膜3。然而,本發明不以上述所舉的例子為限。
值得注意的是,本實施例的晶片移轉設備1可也用於承載膜3位於基板5下方的實施態樣,並不限於上述實施例。
[實施例的有益效果]
本發明的其中一有益效果在於,本發明所提供的晶片移轉方法,其能通過“(A)提供一承載有多個晶片2的承載膜3以及一具有黏著層4的基板5”、“(B)將承載膜3與基板5相對設置,以使得該些晶片2面向黏著層4”、“(C)利用一頂抵件13部分穿過承載膜3以頂抵至少一個晶片2,而使得晶片2脫離承載膜3而轉貼附在黏著層4上”以及“(D)重覆步驟(C),以將其餘的該些晶片2依序脫離承載膜3而轉貼附在黏著層4上”的技術方案,提升晶片2移轉的效率及速度。
本發明的另外一有益效果在於,本發明所提供的晶片移轉設備1,其能通過“第一承載板11與第二承載板12彼此相對應且延著垂直方向設置”、“一承載有多個晶片2的承載膜3設置在第一承載板11”、“一具有黏著層4的基板5設置在第二承載板12”、“承載膜3面向基板5,以使得該些晶片2面向黏著層4”以及“頂抵件13部分穿過承載膜3而頂抵至少一個晶片2,以使得晶片2脫離承載膜3而轉貼附在黏著層4上”的技術方案,提升晶片2移轉的效率及速度。
本發明的另外再一有益效果在於,本發明所提供的晶片移轉
設備,其能通過“第一承載板11用於承載一承載有多個晶片2的承載膜3”、“第二承載板12用於承載一具有黏著層4的基板5”、“頂抵件13設置在第一承載板11的上方或者下方”、以及“第一承載板11、第二承載板12以及頂抵件13延著垂直方向設置”的技術方案,提升晶片2移轉的效率及速度。
更進一步來說,本發明所提供的晶片移轉方法及晶片移轉設備1可通過上述技術方案,可提升晶片2移轉到基板5的黏著層4的效率及速度,並縮短移轉所耗費的時間。
以上所公開的內容僅為本發明的較佳可行實施例,並非因此侷限本發明的申請專利範圍,所以凡是運用本發明說明書及圖式內容所做的等效技術變化,均包含於本發明的申請專利範圍內。
代表圖為流程圖,故無符號簡單說明
Claims (9)
- 一種晶片移轉方法,其包括:(A)提供一承載有多個晶片的承載膜以及一具有黏著層的基板;(B)將該承載膜與該基板相對設置,以使得該些晶片面向該黏著層;(C)利用一頂抵件部分穿過該承載膜以頂抵至少一該晶片,而使得該晶片脫離該承載膜而轉貼附在該黏著層上;以及(D)重覆步驟(C),以將其餘的該些晶片依序脫離該承載膜而轉貼附在該黏著層上;其中,在步驟(C)中,該承載膜被一具有一貫穿開孔以及多個抽真空孔的殼體所接觸,該頂抵件穿過該貫穿開孔以頂抵該晶片,該貫穿開孔與該些抽真空孔進行抽真空而使得該殼體緊密貼附在該承載膜上。
- 如請求項1所述的晶片移轉方法,其中,在步驟(B)中,該承載膜位於該基板的上方,或者該承載膜位於該基板的下方。
- 如請求項1所述的晶片移轉方法,其中,在步驟(C)中,透過該頂抵件的頂抵,該晶片的一底面是在完全脫離該承載膜後,該晶片的一頂面才瞬間轉貼附在該黏著層上。
- 如請求項1所述的晶片移轉方法,其中,在步驟(C)中,透過該頂抵件的頂抵,該晶片的一底面是在部分脫離該承載膜時,該晶片的一頂面才轉貼附在該黏著層上。
- 一種晶片移轉設備,其包括一第一承載板、一第二承載板以及一頂抵件,該第一承載板與該第二承載板彼此相對應且延著垂直方向設置;其中,一承載有多個晶片的承載膜設置在該第一承載板,一具有黏著層的基板設置在該第二承載板,該承載膜面向該基板,以使得該些晶片面向該黏著層;其中,該頂抵件 部分穿過該承載膜而頂抵至少一該晶片,以使得該晶片脫離該承載膜而轉貼附在該黏著層上。
- 如請求項5所述的晶片移轉設備,其中,該承載膜位於該基板的上方,或者該承載膜位於該基板的下方。
- 如請求項5所述的晶片移轉設備,還進一步包括:一殼體,其具有一貫穿開孔,該頂抵件穿過該貫穿開孔以頂抵該晶片。
- 如請求項5所述的晶片移轉設備,還進一步包括:一殼體,其具有一貫穿開孔以及多個抽真空孔;其中,當該殼體接觸該承載膜,且該貫穿開孔與該些抽真空孔進行抽真空時,該殼體緊密貼附在該承載膜上。
- 一種晶片移轉設備,其包括:一第一承載板,其用於承載一承載有多個晶片的承載膜;一第二承載板,其用於承載一具有黏著層的基板;以及一頂抵件,其設置在該第一承載板的上方或者下方;其中,該第一承載板、該第二承載板以及該頂抵件延著垂直方向設置。
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TW201838050A (zh) * | 2017-03-29 | 2018-10-16 | 台灣愛司帝科技股份有限公司 | 位置偵測與晶片分離裝置 |
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JP2000195877A (ja) * | 1998-12-25 | 2000-07-14 | Matsushita Electric Ind Co Ltd | ダイシングシ―ト上のチップの分離方法及び分離装置 |
WO2006105782A2 (de) * | 2005-04-08 | 2006-10-12 | Pac Tech-Packaging Technologies Gmbh | Verfahren und vorrichtung zur übertragung eines chips auf ein kontaktsubstrat |
JP4616719B2 (ja) * | 2005-07-20 | 2011-01-19 | 富士通株式会社 | Icチップ実装方法 |
DE102006002367B3 (de) * | 2006-01-17 | 2007-10-04 | Mühlbauer Ag | Vorrichtung und Verfahren zur Übertragung einer Mehrzahl von Chips von einem Wafer auf ein Substrat |
DE102014111744B4 (de) * | 2014-08-18 | 2022-01-05 | Infineon Technologies Ag | Baugruppe zum handhaben eines halbleiterchips und verfahren zum handhaben eines halbleiterchips |
US9633883B2 (en) * | 2015-03-20 | 2017-04-25 | Rohinni, LLC | Apparatus for transfer of semiconductor devices |
US10304709B2 (en) * | 2015-04-28 | 2019-05-28 | Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelikj Onderzoek Tno | Apparatus and method for contactless transfer and soldering of chips using a flash lamp |
DE102017124582A1 (de) * | 2017-10-20 | 2019-04-25 | Asm Assembly Systems Gmbh & Co. Kg | Ergänzungswerkzeug für Chip-Transfervorrichtung mit Entnahmewerkzeug und Wendewerkzeug |
KR102486822B1 (ko) * | 2018-03-29 | 2023-01-10 | 삼성전자주식회사 | 칩 이송 장치 및 이를 이용한 칩 이송 방법 |
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TW200719402A (en) * | 2005-11-03 | 2007-05-16 | Siliconware Precision Industries Co Ltd | Method for thinning wafer |
TW201838050A (zh) * | 2017-03-29 | 2018-10-16 | 台灣愛司帝科技股份有限公司 | 位置偵測與晶片分離裝置 |
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US11018041B2 (en) | 2021-05-25 |
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