TWI770612B - 晶片移轉系統與晶片移轉方法 - Google Patents

晶片移轉系統與晶片移轉方法 Download PDF

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TWI770612B
TWI770612B TW109132276A TW109132276A TWI770612B TW I770612 B TWI770612 B TW I770612B TW 109132276 A TW109132276 A TW 109132276A TW 109132276 A TW109132276 A TW 109132276A TW I770612 B TWI770612 B TW I770612B
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micro
circuit substrate
chip
wafer
heater
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TW109132276A
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TW202213707A (zh
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廖建碩
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歆熾電氣技術股份有限公司
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Priority to TW109132276A priority Critical patent/TWI770612B/zh
Priority to US17/474,068 priority patent/US20220093557A1/en
Priority to CN202111075018.4A priority patent/CN114203582A/zh
Publication of TW202213707A publication Critical patent/TW202213707A/zh
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Abstract

本發明公開一種晶片移轉系統與晶片移轉方法。晶片移轉系統包括基板承載模組、晶片承載模組、晶片頂抵模組以及渦電流產生模組。基板承載模組用於承載一電路基板。晶片承載模組包括鄰近基板承載模組的一晶片承載結構，以用於承載包括有多個電子晶片的一晶片群組。晶片頂抵模組包括鄰近晶片承載結構的一頂針結構。渦電流產生模組包括一導電線圈結構。多個微加熱器設置在電路基板、晶片群組以及晶片承載結構三者之中的至少其中之一。藉此，相對應的微加熱器能透過導電線圈結構所產生的渦電流而被加熱，並且設置在電子晶片與電路基板之間的兩個焊接材料能透過相對應的微加熱器的加熱並固化。

Description

晶片移轉系統與晶片移轉方法
本發明涉及一種移轉系統與移轉方法，特別是涉及一種晶片移轉系統與晶片移轉方法。
現有技術中，發光二極體晶片可以透過頂針的頂抵動作，以從一承載體移轉到另一承載體上，然後再透過外部加熱方式(例如回焊爐)將發光二極體晶片安裝在電路基板上。然而，現有的發光二極體晶片移轉方法仍然具有可改善空間。
本發明所要解決的技術問題在於，針對現有技術的不足提供一種晶片移轉系統與晶片移轉方法。
為了解決上述的技術問題，本發明所採用的其中一技術方案是提供一種晶片移轉系統，其包括：一基板承載模組、一晶片承載模組、一晶片頂抵模組以及一渦電流產生模組。基板承載模組用於承載一電路基板。晶片承載模組包括鄰近基板承載模組的一晶片承載結構，以用於承載包括有多個電子晶片的一晶片群組。晶片頂抵模組包括鄰近晶片承載結構的一頂針結構。渦電流產生模組包括一導電線圈結構。其中，多個微加熱器設置在電路基板、晶 片群組以及晶片承載結構三者之中的至少其中之一或者不使用微加熱器。
為了解決上述的技術問題，本發明所採用的另外一技術方案是提供一種晶片移轉方法，其包括：透過一頂針結構的頂抵以將一電子晶片從一晶片承載結構移轉到一電路基板上，其中，兩個焊接材料設置在電子晶片與電路基板之間，一微加熱器設置在電路基板、電子晶片以及晶片承載結構三者之中的至少其中之一或者不使用微加熱器；將一渦電流產生模組的一導電線圈結構與微加熱器或者頂針結構兩者彼此靠近；透過導電線圈結構所產生的渦電流，以加熱微加熱器或者頂針結構；以及，透過微加熱器或者頂針結構所產生的熱，以加熱並固化兩個焊接材料。
本發明的其中一有益效果在於，本發明所提供的一種晶片移轉系統，其能通過“晶片頂抵模組包括鄰近晶片承載結構的一頂針結構”、“渦電流產生模組包括一導電線圈結構”以及“多個微加熱器設置在電路基板、晶片群組以及晶片承載結構三者之中的至少其中之一或者不使用微加熱器”的技術方案，以使得相對應的微加熱器或者頂針結構能透過導電線圈結構所產生的渦電流而被加熱，並且使得設置在電子晶片與電路基板之間的兩個焊接材料能透過相對應的微加熱器或者頂針結構的加熱並固化。
本發明的其中一有益效果在於，本發明所提供的一種晶片移轉方法，其能通過“透過一頂針結構的頂抵以將一電子晶片從一晶片承載結構移轉到一電路基板上，兩個焊接材料設置在電子晶片與電路基板之間，一微加熱器設置在電路基板、電子晶片以及晶片承載結構三者之中的至少其中之一或者不使用微加熱器”、“將一渦電流產生模組的一導電線圈結構與微加熱器或者頂針結構兩者彼此靠近”、“透過導電線圈結構所產生的渦電流，以加熱微加熱器或者頂針結構”以及“透過微加熱器或者頂針結構所產生的熱，以加熱並固化兩個焊接材料”的技術方案，以使得微加熱器或者頂針結 構能透過導電線圈結構所產生的渦電流而被加熱，並且使得設置在電子晶片與電路基板之間的兩個焊接材料能透過微加熱器或者頂針結構的加熱並固化。
為使能進一步瞭解本發明的特徵及技術內容，請參閱以下有關本發明的詳細說明與圖式，然而所提供的圖式僅用於提供參考與說明，並非用來對本發明加以限制。
S:晶片移轉系統
1:基板承載模組
2:晶片承載模組
20:晶片承載結構
201:彈性薄膜
202:黏著層
3:晶片頂抵模組
30:頂針結構
4:渦電流產生模組
41:導電線圈結構
4100:渦電流
42:控制器
P:電路基板
P100:導電焊墊
C:電子晶片
B:焊接材料
H:微加熱器
圖1為本發明第一實施例的晶片移轉系統的示意圖。
圖2為本發明第一實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖3為本發明第一實施例的電子晶片完全脫離晶片承載結構而被設置在電路基板上的示意圖。
圖4為本發明第二實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖5為本發明第三實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖6為本發明第四實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖7為本發明第五實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖8為本發明第六實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖9為本發明第七實施例的晶片移轉系統的示意圖。
圖10為本發明第七實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖11為本發明第八實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖12為本發明第九實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖13為本發明第十實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖14為本發明第十一實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
圖15為本發明第十二實施例的晶片移轉系統將電子晶片從晶片承載結構移轉到電路基板上的示意圖。
以下是通過特定的具體實施例來說明本發明所公開有關“晶片移轉系統與晶片移轉方法”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以實行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不背離本發明的構思下進行各種修改與變更。另外，本發明的附圖僅為簡單示意說明，並非依實際尺寸的描繪，事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的保護範圍。另外，本文中所使用的術語“或”，應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。
參閱圖1至圖15所示，本發明提供一種晶片移轉系統S，其包括： 一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。基板承載模組1用於承載一電路基板P。晶片承載模組2包括鄰近基板承載模組1的一晶片承載結構20，以用於承載包括有多個電子晶片C的一晶片群組。晶片頂抵模組3包括鄰近晶片承載結構20的一頂針結構30。渦電流產生模組4包括一導電線圈結構41。多個微加熱器H設置在電路基板P、包括有多個電子晶片C的晶片群組以及晶片承載結構20三者之中的至少其中之一或者不使用微加熱器H。
參閱圖1至圖15所示，本發明提供一種晶片移轉方法，其包括：首先，透過一頂針結構30的頂抵以將一電子晶片C從一晶片承載結構20移轉到一電路基板P上，兩個焊接材料B設置在電子晶片C與電路基板P之間，一微加熱器H設置在電路基板P、電子晶片C以及晶片承載結構20三者之中的至少其中之一或者不使用微加熱器H；然後，將一渦電流產生模組4的一導電線圈結構41與微加熱器H彼此靠近；接著，透過導電線圈結構41所產生的渦電流4100，以加熱微加熱器H；然後，如圖3所示，透過微加熱器H所產生的熱，以加熱並固化兩個焊接材料B。
[第一實施例]
參閱圖1至圖3所示，本發明第一實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。
更進一步來說，如圖1所示，基板承載模組1可以用於承載一電路基板P，並且電路基板P具有多個導電焊墊P100。舉例來說，基板承載模組1可為一種可沿著水平面移動的承載機台，並且多個焊接材料B(例如錫球、錫膏或者任何的導電材料)可以分別預先放置在多個導電焊墊P100上。然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
更進一步來說，如圖1所示，晶片承載模組2包括設置在基板承載模組1的上方的一晶片承載結構20，以用於承載包括有多個電子晶片C的一晶片群組。舉例來說，晶片承載結構20可為用於承載多個電子晶片C的一藍膜，晶片承載結構20包括背對電路基板P的一彈性薄膜201以及面向電路基板P的一黏著層202，並且黏著層202設置在彈性薄膜201上。藉此，透過晶片承載結構20的黏著層202所提供的黏性，以使得多個電子晶片C可以被設置在黏著層202上。然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
更進一步來說，如圖1所示，晶片頂抵模組3包括設置在晶片承載結構20的上方的一頂針結構30，並且渦電流產生模組4包括一導電線圈結構41以及電性連接於導電線圈結構41的一控制器42。舉例來說，導電線圈結構41可由任何的導電材料所製成，頂針結構30被導電線圈結構41所圍繞，導電線圈結構41所設置的位置對應多個微加熱器H之中的一個，並且導電線圈結構41與頂針結構30可以同步移動(配合圖1至圖3所示)。另外，本發明可以透過控制器42(例如控制開關)的控制，以傳送電流到導電線圈結構41。當導電線圈結構41接收到電流時，導電線圈結構41能夠產生渦電流4100(如圖2所示)。然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
更進一步來說，多個微加熱器H能夠被設置在電路基板P、包括有多個電子晶片C的晶片群組以及晶片承載結構20三者之中的至少其中之一，並且多個微加熱器H能分別對應多個電子晶片C。另外，多個微加熱器H各別獨立且彼此電性絕緣，並且微加熱器H電性絕緣於電路基板P、電子晶片C以及晶片承載結構20三者。舉例來說，如圖1所示，本發明第一實施例所提供的多個微加熱器H都設置在電路基板P內，並且多個微加熱器H不會與設置在電路基板P上的其它電路布局或者電子元件產生電性連接。另外，每一微加熱器H 可為一導電物質，並且導電物質可由任何的導電材料所製成，例如金屬材料或者半導體材料。然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
藉此，如圖2所示，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，渦電流產生模組4的導電線圈結構41會靠近相對應的微加熱器H，以使得相對應的微加熱器H能透過導電線圈結構41所產生的渦電流4100而被加熱。另外，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，設置在電子晶片C與電路基板P之間的兩個焊接材料B能透過相對應的微加熱器H的加熱並固化，以使得其中一焊接材料B能被固定在電子晶片C的其中一晶片焊墊與電路基板P的其中一導電焊墊P100之間，並且使得另外一焊接材料B能被固定在電子晶片C的另外一晶片焊墊與電路基板P的另外一導電焊墊P100之間。更進一步來說，如圖2所示，在第一實施例中(多個微加熱器H設置在電路基板P內)，當導電線圈結構41靠近相對應的微加熱器H時，相對應的微加熱器H所產生的熱能透過電路基板P而傳送到相對應的兩個焊接材料B，以對相對應的兩個焊接材料B進行加熱。
[第二實施例]
參閱圖4所示，本發明第二實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖4與圖2的比較可知，本發明第二實施例與第一實施例最大的不同在於：在第二實施例中，多個微加熱器H分別被設置在多個電子晶片C內。
藉此，如圖4所示，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，渦電流產生模組4的導電線圈結構41會靠近相對應的微加熱器H，以使得相對應的微加熱器H能透過導電線圈結構41所產生的渦電流4100而被加熱。另外，當電子晶片C透過頂針結構30的頂抵而 從晶片承載結構20移轉到電路基板P上時，設置在電子晶片C與電路基板P之間的兩個焊接材料B能透過相對應的微加熱器H的加熱並固化。更進一步來說，如圖4所示，在第二實施例中(多個微加熱器H分別被設置在多個電子晶片C內)，當導電線圈結構41靠近相對應的微加熱器H時，相對應的微加熱器H所產生的熱能透過相對應的電子晶片C而傳送到相對應的兩個焊接材料B，以對相對應的兩個焊接材料B進行加熱。
[第三實施例]
參閱圖5所示，本發明第三實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖5與圖2的比較可知，本發明第三實施例與第一實施例最大的不同在於：在第三實施例中，多個微加熱器H設置在晶片承載結構20內。
藉此，如圖5所示，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，渦電流產生模組4的導電線圈結構41會靠近相對應的微加熱器H，以使得相對應的微加熱器H能透過導電線圈結構41所產生的渦電流4100而被加熱。另外，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，設置在電子晶片C與電路基板P之間的兩個焊接材料B能透過相對應的微加熱器H的加熱並固化。更進一步來說，如圖5所示，在第三實施例中(多個微加熱器H設置在晶片承載結構20內)，當導電線圈結構41靠近相對應的微加熱器H時，相對應的微加熱器H所產生的熱能依序透過晶片承載結構20與相對應的電子晶片C而傳送到相對應的兩個焊接材料B，以對相對應的兩個焊接材料B進行加熱。
[第四實施例]
參閱圖6所示，本發明第四實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流 產生模組4。由圖6與圖2的比較可知，本發明第四實施例與第一實施例最大的不同在於：第四實施例不需使用微加熱器H。
藉此，如圖6所示，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，渦電流產生模組4的導電線圈結構41會靠近頂針結構30，以使得頂針結構30能透過導電線圈結構41所產生的渦電流4100而被加熱。另外，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，設置在電子晶片C與電路基板P之間的兩個焊接材料B能透過頂針結構30的加熱並固化。更進一步來說，如圖6所示，當導電線圈結構41靠近頂針結構30時，相對應的微加熱器H將產生熱能並依序透過晶片承載結構20與相對應的電子晶片C而傳送到相對應的兩個焊接材料B，以對相對應的兩個焊接材料B進行加熱。
[第五實施例]
參閱圖7所示，本發明第五實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖7與圖2的比較可知，本發明第五實施例與第一實施例最大的不同在於：在第五實施例中，導電線圈結構41所設置的位置對應多個微加熱器H之中的一個以上，藉此以提升導電線圈結構41所提供的渦電流4100。
[第六實施例]
參閱圖8所示，本發明第六實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖8與圖5的比較可知，本發明第六實施例與第三實施例最大的不同在於：在第六實施例中，導電線圈結構41所設置的位置對應多個微加熱器H之中的一個以上，藉此以提升導電線圈結構41所提供的渦電流4100。
[第七實施例]
參閱圖9與圖10所示，本發明第七實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖9與圖1的比較，以及圖10與圖2的比較可知，本發明第七實施例與第一實施例最大的不同在於：在第七實施例中，導電線圈結構41固定地設置在電路基板P的下方，並且導電線圈結構41與頂針結構30之間被電路基板P與晶片承載模組2所隔開而彼此分離一預定距離。
藉此，如圖10所示，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，由於渦電流產生模組4的導電線圈結構41會靠近相對應的微加熱器H，所以相對應的微加熱器H能透過導電線圈結構41所產生的渦電流4100而被加熱。另外，當電子晶片C透過頂針結構30的頂抵而從晶片承載結構20移轉到電路基板P上時，設置在電子晶片C與電路基板P之間的兩個焊接材料B能透過相對應的微加熱器H的加熱並固化。更進一步來說，如圖10所示，在第七實施例中(多個微加熱器H設置在電路基板P內)，當導電線圈結構41靠近相對應的微加熱器H時，相對應的微加熱器H所產生的熱能透過電路基板P而傳送到相對應的兩個焊接材料B，以對相對應的兩個焊接材料B進行加熱。
[第八實施例]
參閱圖11所示，本發明第八實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖11與圖10的比較可知，本發明第八實施例與第七實施例最大的不同在於：在第八實施例中，多個微加熱器H分別被設置在多個電子晶片C內，並且多個微加熱器H的作用與第二實施例相同。
[第九實施例]
參閱圖12所示，本發明第九實施例提供一種晶片移轉系統S，其 包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖12與圖10的比較可知，本發明第九實施例與第七實施例最大的不同在於：在第九實施例中，多個微加熱器H設置在晶片承載結構20內，並且多個微加熱器H的作用與第三實施例相同。
[第十實施例]
參閱圖13所示，本發明第十實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖13與圖10的比較可知，本發明第十實施例與第七實施例最大的不同在於：第十實施例不需使用微加熱器H，並且第十實施例的頂針結構30的作用與第四實施例相同。
[第十一實施例]
參閱圖14所示，本發明第十一實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖14與圖10的比較可知，本發明第十一實施例與第七實施例最大的不同在於：在第十一實施例中，導電線圈結構41所設置的位置對應多個微加熱器H之中的一個以上，藉此以提升導電線圈結構41所提供的渦電流4100。
[第十二實施例]
參閱圖15所示，本發明第十二實施例提供一種晶片移轉系統S，其包括：一基板承載模組1、一晶片承載模組2、一晶片頂抵模組3以及一渦電流產生模組4。由圖15與圖12的比較可知，本發明第十二實施例與第九實施例最大的不同在於：在第十二實施例中，導電線圈結構41所設置的位置對應多個微加熱器H之中的一個以上，藉此以提升導電線圈結構41所提供的渦電流4100。
[實施例的有益效果]
本發明的其中一有益效果在於，本發明所提供的一種晶片移轉系統S，其能通過“晶片頂抵模組3包括鄰近晶片承載結構20的一頂針結構30”、“渦電流產生模組4包括一導電線圈結構41”以及“多個微加熱器H設置在電路基板P、晶片群組以及晶片承載結構20三者之中的至少其中之一或者不使用多個微加熱器H”的技術方案，以使得相對應的微加熱器H或者頂針結構30能透過導電線圈結構41所產生的渦電流4100而被加熱，並且使得設置在電子晶片C與電路基板P之間的兩個焊接材料B能透過相對應的微加熱器H或者頂針結構30的加熱並固化。
本發明的其中一有益效果在於，本發明所提供的一種晶片移轉方法，其能通過“透過一頂針結構30的頂抵以將一電子晶片C從一晶片承載結構20移轉到一電路基板P上，兩個焊接材料B設置在電子晶片C與電路基板P之間，一微加熱器H設置在電路基板P、電子晶片C以及晶片承載結構20三者之中的至少其中之一或者不使用微加熱器H”、“將一渦電流產生模組4的一導電線圈結構41與微加熱器H或者頂針結構30兩者彼此靠近”、“透過導電線圈結構41所產生的渦電流4100，以加熱微加熱器H或者頂針結構30”以及“透過微加熱器H或者頂針結構30所產生的熱，以加熱並固化兩個焊接材料B”的技術方案，以使得微加熱器H或者頂針結構30能透過導電線圈結構41所產生的渦電流4100而被加熱，並且使得設置在電子晶片C與電路基板P之間的兩個焊接材料B能透過微加熱器H或者頂針結構30的加熱並固化。
以上所公開的內容僅為本發明的優選可行實施例，並非因此侷限本發明的申請專利範圍，所以凡是運用本發明說明書及圖式內容所做的等效技術變化，均包含於本發明的申請專利範圍內。
S:晶片移轉系統
1:基板承載模組
2:晶片承載模組
20:晶片承載結構
201:彈性薄膜
202:黏著層
3:晶片頂抵模組
30:頂針結構
4:渦電流產生模組
41:導電線圈結構
4100:渦電流
42:控制器
P:電路基板
P100:導電焊墊
C:電子晶片
B:焊接材料
H:微加熱器

Claims (7)

  1. 一種晶片移轉系統，其包括：一基板承載模組，所述基板承載模組用於承載一電路基板，所述電路基板具有多個導電焊墊；一晶片承載模組，所述晶片承載模組包括設置在所述基板承載模組的上方的一晶片承載結構，以用於承載包括有多個電子晶片的一晶片群組；一晶片頂抵模組，所述晶片頂抵模組包括設置在所述晶片承載結構的上方的一頂針結構；以及一渦電流產生模組，所述渦電流產生模組包括一導電線圈結構以及電性連接於所述導電線圈結構的一控制器；其中，多個微加熱器設置在所述電路基板、所述晶片群組以及所述晶片承載結構三者之中的至少其中之一，且多個所述微加熱器分別對應多個所述電子晶片，且所述導電線圈結構固定地設置在所述電路基板的下方；其中，當所述電子晶片透過所述頂針結構的頂抵而從所述晶片承載結構移轉到所述電路基板上時，所述渦電流產生模組的所述導電線圈結構靠近相對應的所述微加熱器，以使得相對應的所述微加熱器透過所述導電線圈結構所產生的渦電流而被加熱；其中，當所述電子晶片透過所述頂針結構的頂抵而從所述晶片承載結構移轉到所述電路基板上時，設置在所述電子晶片與所述電路基板之間的兩個焊接材料透過相對應的所述微加熱器的加熱並固化。
  2. 如請求項1所述的晶片移轉系統，其中，所述導電線圈結構所設置的位置對應多個所述微加熱器之中的一個或者一個以 上，且所述導電線圈結構與所述頂針結構彼此分離；其中，所述晶片承載結構包括背對所述電路基板的一彈性薄膜以及面向所述電路基板的一黏著層，所述黏著層設置在所述彈性薄膜上，且多個所述電子晶片設置在所述黏著層上；其中，每一所述微加熱器為一導電物質，多個所述微加熱器彼此電性絕緣，且所述微加熱器電性絕緣於所述電路基板、所述電子晶片以及所述晶片承載結構三者；其中，當多個所述微加熱器設置在所述電路基板內且所述導電線圈結構靠近相對應的所述微加熱器時，相對應的所述微加熱器所產生的熱透過所述電路基板而傳送到相對應的兩個所述焊接材料，以對相對應的兩個所述焊接材料進行加熱。
  3. 如請求項1所述的晶片移轉系統，其中，所述導電線圈結構所設置的位置對應多個所述微加熱器之中的一個或者一個以上，且所述導電線圈結構與所述頂針結構彼此分離；其中，所述晶片承載結構包括背對所述電路基板的一彈性薄膜以及面向所述電路基板的一黏著層，所述黏著層設置在所述彈性薄膜上，且多個所述電子晶片設置在所述黏著層上；其中，每一所述微加熱器為一導電物質，多個所述微加熱器彼此電性絕緣，且所述微加熱器電性絕緣於所述電路基板、所述電子晶片以及所述晶片承載結構三者；其中，當多個所述微加熱器分別設置在多個所述電子晶片內且所述導電線圈結構靠近相對應的所述微加熱器時，相對應的所述微加熱器所產生的熱透過相對應的所述電子晶片而傳送到相對應的兩個所述焊接材料，以對相對應的兩個所述焊接材料進行加熱。
  4. 如請求項1所述的晶片移轉系統，其中，所述導電線圈結構 所設置的位置對應多個所述微加熱器之中的一個或者一個以上，且所述導電線圈結構與所述頂針結構彼此分離；其中，所述晶片承載結構包括背對所述電路基板的一彈性薄膜以及面向所述電路基板的一黏著層，所述黏著層設置在所述彈性薄膜上，且多個所述電子晶片設置在所述黏著層上；其中，每一所述微加熱器為一導電物質，多個所述微加熱器彼此電性絕緣，且所述微加熱器電性絕緣於所述電路基板、所述電子晶片以及所述晶片承載結構三者；其中，當多個所述微加熱器設置在所述晶片承載結構內且所述導電線圈結構靠近相對應的所述微加熱器時，相對應的所述微加熱器所產生的熱依序透過所述晶片承載結構與相對應的所述電子晶片而傳送到相對應的兩個所述焊接材料，以對相對應的兩個所述焊接材料進行加熱。
  5. 一種晶片移轉系統，其包括：一基板承載模組，所述基板承載模組用於承載一電路基板，所述電路基板具有多個導電焊墊；一晶片承載模組，所述晶片承載模組包括鄰近所述基板承載模組的一晶片承載結構，以用於承載包括有多個電子晶片的一晶片群組；一晶片頂抵模組，所述晶片頂抵模組包括鄰近所述晶片承載結構的一頂針結構；以及一渦電流產生模組，所述渦電流產生模組包括一導電線圈結構，且所述導電線圈結構固定地設置在所述電路基板的下方；其中，多個微加熱器設置在所述電路基板、所述晶片群組以及所述晶片承載結構三者之中的至少其中之一或者不使用多 個所述微加熱器，所述導電線圈結構靠近所述多個微加熱器或者所述頂針結構，以使得所述多個微加熱器或者所述頂針結構產生熱，而設置在所述多個電子晶片與所述電路基板之間的焊接材料透過相對應的所述多個微加熱器或者所述頂針結構加熱並固化。
  6. 一種晶片移轉方法，其包括：透過一頂針結構的頂抵以將一電子晶片從一晶片承載結構移轉到一電路基板上，所述電路基板具有多個導電焊墊，其中，兩個焊接材料設置在所述電子晶片與所述電路基板之間，一微加熱器設置在所述電路基板、所述電子晶片以及所述晶片承載結構三者之中的至少其中之一或者不使用所述微加熱器；將一渦電流產生模組的一導電線圈結構與所述微加熱器或者所述頂針結構兩者彼此靠近，且所述導電線圈結構固定地設置在所述電路基板的下方；透過所述導電線圈結構所產生的渦電流，以加熱所述微加熱器或者所述頂針結構；以及透過所述微加熱器或者所述頂針結構所產生的熱，以加熱並固化兩個所述焊接材料。
  7. 如請求項6所述的晶片移轉方法，其中，所述晶片承載結構包括背對所述電路基板的一彈性薄膜以及面向所述電路基板的一黏著層，所述黏著層設置在所述彈性薄膜上，且所述電子晶片設置在所述黏著層上；其中，所述微加熱器為一導電物質，且所述微加熱器電性絕緣於所述電路基板、所述電子晶片以及所述晶片承載結構三者；其中，當所述微加熱器設置在所 述電路基板內且所述導電線圈結構靠近所述微加熱器時，所述微加熱器所產生的熱透過所述電路基板而傳送到兩個所述焊接材料，以對兩個所述焊接材料進行加熱；其中，當所述微加熱器設置在所述電子晶片內且所述導電線圈結構靠近所述微加熱器時，所述微加熱器所產生的熱透過所述電子晶片而傳送到兩個所述焊接材料，以對兩個所述焊接材料進行加熱；其中，當所述微加熱器設置在所述晶片承載結構內且所述導電線圈結構靠近所述微加熱器時，所述微加熱器所產生的熱依序透過所述晶片承載結構與所述電子晶片而傳送到兩個所述焊接材料，以對兩個所述焊接材料進行加熱。
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