JP6931328B2 - 半導体デバイスの転写方法 - Google Patents
半導体デバイスの転写方法 Download PDFInfo
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- JP6931328B2 JP6931328B2 JP2017549243A JP2017549243A JP6931328B2 JP 6931328 B2 JP6931328 B2 JP 6931328B2 JP 2017549243 A JP2017549243 A JP 2017549243A JP 2017549243 A JP2017549243 A JP 2017549243A JP 6931328 B2 JP6931328 B2 JP 6931328B2
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- transfer
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- wafer tape
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Description
本出願は、2015年11月12日に出願された「Method and Apparatus for Transfer of Semiconductor Devices」と題する米国特許出願第14/939,896号の継続出願であり、それに対する優先権を主張するものであり、更には、米国仮特許出願第62/146,956号に対する優先権を主張し、米国仮特許出願第62/136,434号に対する優先権を主張するものである。これらの出願は、その全体が参照によって本明細書に組み込まれる。
図1は、装置100の実施形態を示す。この装置は、パッケージされていない半導体部品(または「ダイ」)をウェーハテープから製品基材に直接転写するために、または同様に、他の電気部品をキャリア基材、すなわち、1つ以上の電気部品を運搬する基材から製品基材に転写するために使用され得る。ウェーハテープは、本明細書において、半導体デバイスダイ基材、または単にダイ基材と呼ばれる場合もある。装置100は、製品基材搬送機構102及びウェーハテープ搬送機構104を備えてもよい。製品基材搬送機構102及びウェーハテープ搬送機構104のそれぞれは、互いに対して所望の整列位置に搬送されるようにそれぞれの基材を固定するフレームシステムまたは他の手段を備えてもよい。装置100は、転写機構106を更に備えてもよい。この機構は、図に示すように、ウェーハテープ搬送機構104の垂直上方に配置されてもよい。ある場合において、転写機構106は、ウェーハ基材にほとんど接触するように位置してもよい。加えて、装置100は、固定機構108を備えてもよい。固定機構108は、転写位置にある転写機構106と整列した状態で製品基材搬送機構102の垂直下方に配置されてもよい。この転写位置において、製品基材上にダイが配置され得る。後述するように、図2A及び2Bは、装置100の例示的な細部を示す。
前述したように、ニードルの先端300のプロファイル形状について図3に関して説明する。この図には、先端300のプロファイル形状の概略例が示されている。実施形態において、先端300は、テーパー部分304に隣接する側壁302、コーナー306、及び基端部308を含むニードルの端部と定義され得る。この先端は、ニードルの対向側まで横断する方向に伸びることができる。先端300の具体的なサイズ及び形状は、転写プロセスの要因に応じて変わる場合がある。このような要因としては、例えば、転写中のダイ220のサイズ、ならびに転写動作の速度及び衝撃力などがある。例えば、図3に見られる角度θは、ニードルの中心軸の長手方向とテーパー部分304との間で計測されるが、約10〜15°の範囲でもよく、コーナー306の半径rは約15ミクロン〜50ミクロン強の範囲でもよく、基端308の幅wは約0ミクロン〜100ミクロン(μm)強の範囲でもよく(ここでwは、転写中のダイ220の幅以下でもよい)、テーパー部分304の高さhは約1〜2mmの範囲でもよく(ここでhは、転写動作のストローク中、ニードルが移動する距離より大きくてもよい)、ニードル226の直径dは約1mmでもよい。
ニードル作動性能プロファイルの実施形態を図4に示す。すなわち、図4は、ウェーハテープ218の平面に対するニードル先端の高さを、それが時間と共に変化するように表すことにより、転写動作中に実行されるストロークパターンの例を示す。従って、図4の「0」の位置は、ウェーハテープ218の上面となり得る。更に、ニードルのアイドル時間及びニードルの準備時間が、プログラムされたプロセスに応じて、または第1のダイを転写してから、第2のダイに到達して転写できるようにするのに要する時間までの様々な期間に応じて変化し得るため、ストロークパターンのアイドル相及び準備相にて示した破線は、その時間が概算であるが、それより長い期間でも短い期間でもよいことを示す。更に、レーザーを使用する場合に示した実線は、これを用いて説明した実施形態のための例示的な時間であるが、レーザーのオン・オフ時間の実際の期間は、回路を形成する際に使用する材料(回路配線の材料の選択など)、製品基材の種類、所望の効果(回路配線を予め溶融すること、部分的な結合、完全な結合など)、結合箇所(すなわち、製品基材の上面)からのレーザーの距離、転写中のダイのサイズ、及びレーザーの出力/強度/波長などに応じて変化し得ることを理解すべきである。従って、図4に示したプロファイルに関する以下の説明は、ニードルプロファイルについての例示的な実施形態となり得る。
図5は、処理を終えた製品基材500の例示的な実施形態を示す。製品基材502は、第1の部分の回路配線504Aを含んでもよい。この回路配線は、電源がそれに印加されると、負電源端子または正電源端子として機能し得る。第2の部分の回路配線504Bは、第1部分の回路配線504Aに隣接して延在してもよく、電源がそれに印加されると、対応する正電源端子または負電源端子として作用し得る。
直接転写システム600の実施形態の簡略化した例を図6に示す。転写システム600は、パーソナルコンピュータ(PC)602(または、サーバ、データ入力装置、ユーザーインターフェースなど)、データ記憶装置604、ウェーハテープ機構606、製品基材機構608、転写機構610及び固定機構612を含んでもよい。ウェーハテープ機構606、製品基材機構608、転写機構610及び固定機構612のより詳細な説明についてはこれまで行ってきたため、これらの機構に関する具体的な詳細事項については、ここで繰り返さない。しかしながら、ウェーハテープ機構606、製品基材機構608、転写機構610及び固定機構612がPC602とデータ記憶装置604の間の対話にどのように関連するかについての概要を以下で説明する。
転写システム700のそれぞれの要素間の通信経路の概略については、以下のように説明することができる。
1つ以上のダイがウェーハテープから製品基材に直接転写される直接転写プロセスの実行方法800を図8に示す。本明細書に記載した方法800の各工程は、いかなる特定の順序でなくてもよく、従って所望の製品状態を達成するのに十分なあらゆる順序で実行されてもよい。方法800は、転写プロセスデータをPC及び/またはデータ記憶装置にロードする工程802を含んでもよい。転写プロセスデータは、ダイマップデータ、回路CADファイルデータ及びニードルプロファイルデータなどのデータを含んでもよい。
ダイをウェーハテープ(または、図9を簡単に説明するために「ダイ基材」とも呼ばれる、ダイを保持する他の基材)から製品基材に直接転写させる直接転写動作方法900を図9に示す。本明細書に記載した方法900の各工程は、どの特定の順序でなくてもよく、従って所望の製品状態を達成するのに十分なあらゆる順序で実行されてもよい。
図10に関して記載した実施形態において、上記の直接転写装置の構成要素のいくつかを、コンベア/組立ラインシステム1000(以下「コンベアシステム」)に実装してもよい。特に、図2A及び2Bは、製品基材210が、製品基材コンベアフレーム214によって保持されており、かつ製品基材テンショナーフレーム216によって張力がかけられていることを示している。装置200に関して示したモーター、レール及びギアで構成されるシステムを介して限られた領域内に製品基材コンベアフレーム214を固定することに代わるものとして、図10は、製品基材コンベアフレーム214がコンベアシステム1000を経由して搬送されていることを示す。このコンベアシステムにおいて、製品基材は、ある組立ライン方式プロセスを経る。搬送中の製品基材に対して実行される操作間の実際の搬送手段として、コンベアシステム1000は、それぞれが製品基材を保持する複数の製品基材コンベアフレーム214を順次搬送するための、一連のトラック、ローラー及びベルト1002、ならびに/または他の搬送装置を含んでもよい。
直接転写装置の別の実施形態において、図11A及び11Bから理解できるように、「光ストリング」を形成してもよい。装置1100の特徴の多くは、図2A及び2Bの装置200の特徴と実質的に類似したままでもよいが、製品基材搬送機構1102は、図11A及び11Bに示すように、製品基材212とは異なる製品基材1104を搬送するように構成されてもよい。具体的には、図2A及び2Bにおいて、製品基材搬送機構202は、コンベアフレーム214及びテンショナーフレーム216を含む。これらのフレームは、張力下でシート状の製品基材212を固定している。しかしながら、図11A及び11Bの実施形態において、製品基材搬送機構1102は、製品基材リールシステムを含んでもよい。
直接転写装置の更なる実施形態において、図12から理解できるように、装置1200は、ウェーハテープ搬送機構1202を備えてもよい。特に、図2A及び2Bに示したウェーハテープコンベアフレーム222及びテンショナーフレーム224の代わりに、ウェーハテープ搬送機構1202は、1つ以上のリール1204で構成されるシステムを含んで、装置1200の転写位置を通してダイ220を搬送して単一の基材にダイを転写してもよい。特に、各リール1204は、幅狭の、連続的な長尺状細片として形成された基材1206を含んでもよい。この細片には、当該細片の長さに沿ってダイ220が連続して取り付けられている。
図13は、直接転写装置1300の実施形態を示す。図2A及び2Bと同様に、製品基材搬送機構202は、ウェーハテープ搬送機構204に近接して配置されてもよい。しかしながら、搬送機構202と搬送機構204の間に空間が存在しており、この空間に、ウェーハテープ218から製品基材210へのダイ220の転写を実行するように転写機構1302が配置され得る。
A:半導体デバイスの製品基材への転写方法であって、前記半導体デバイスを載置した半導体ウェーハの第1の表面に面するように前記製品基材の表面を位置決めすることと;転写機構を前記半導体ウェーハの第2の表面に係合させるように前記転写機構を作動させることであって、前記半導体ウェーハの前記第2の表面は前記半導体ウェーハの前記第1の表面の反対側にあり、前記転写機構を前記作動させることは、前記半導体ウェーハの前記第1の表面に配置された特定の半導体デバイスの位置に対応する、前記半導体ウェーハの前記第2の表面上の位置に対してピンを押圧させることと、前記ピンを静止位置に格納することとを含む、前記転写機構を前記作動させることと;前記半導体ウェーハの前記第2の表面から前記特定の半導体デバイスを取り外すことと;前記特定の半導体デバイスを前記製品基材に取り付けることとを含む、前記方法。
構造的な特徴及び/または方法論的な行為に特有の言葉でいくつかの実施形態を説明してきたものの、特許請求の範囲は、記載した特定の特徴及び行為に必ずしも限定されるものではないことを理解すべきである。むしろ、特定の特徴及び行為は、特許請求される主題を実施することの例示的な形態として開示される。更に、用語「may(してもよい)」の使用は、必ずしも全ての実施形態とは限らないが、1つ以上の各種実施形態に使用されている特定の特徴の実現性を示すために本明細書において使用される。
Claims (9)
- 第1の基材から第2の基材への複数の半導体ダイの直接転写を実行するシステムであって、前記システムは、
前記第1の基材を搬送する第1の搬送機構と、
前記第2の基材を搬送する第2の搬送機構と、
前記第1の搬送機構に隣接して配置されて、前記直接転写を実施する転写機構と、
前記第1の搬送機構、前記第2の搬送機構、及び前記転写機構と通信可能に接続された1以上のプロセッサを含むコントローラであって、前記コントローラは、実行されたときに前記1以上のプロセッサに、
少なくとも部分的にマップデータに基づいて前記複数の半導体ダイの位置を決定することとであって、前記マップデータは、前記第1の基材上の識別情報に基づいて提供され、半導体ウェハの前記複数の半導体ダイの前記位置を記述し、さらに、前記複数の半導体ダイのうち特定の品質を有する半導体ダイの相対的な位置及び前記複数の半導体ダイそれぞれに関する品質を記述する、ことと、
前記第1の基材、前記第2の基材、及び前記転写機構が、直接転写位置内にあるように、前記第1の基材又は前記第2の基材の少なくとも1つを搬送することと、
前記転写機構を作動させて、前記複数の半導体ダイの前記直接転写を実行することと、
を含む処理を実行させる実行可能な命令を有する、コントローラと、
を備える、システム。 - 前記半導体ウェハは、未分類のダイウェハであり、前記直接転写が実行される前の未分類の状態のままで置かれた多数の半導体デバイスダイを形成するように賽の目に刻まれた半導体ウェハである
請求項1に記載のシステム。 - 前記マップデータは、前記半導体ウェハ上の各半導体ダイの品質及び位置に関する情報を含む
請求項1に記載のシステム。 - 前記処理は、転写プロセスデータを受信すること、及び、少なくとも部分的に前記半導体ダイの品質に基づいて前記複数の半導体ダイを転写することを決定すること、をさらに含む
請求項1に記載のシステム。 - 前記転写機構は、前記第1の基材を押圧して、前記複数の半導体ダイのうちの少なくとも1つの半導体ダイを前記第2の基材に転写するニードルを含む
請求項1に記載のシステム。 - 前記転写機構と通信可能に接続されたセンサであって、前記センサは、前記転写機構に対する前記第2の基材の位置を決定するように構成されている、センサをさらに含む
請求項1に記載のシステム。 - 前記搬送することは、前記第1の基材又は前記第2の基材の少なくとも1つを搬送して、前記第2の基材の位置を前記転写機構に整列させること、をさらに含む
請求項6に記載のシステム。 - 前記搬送することは、少なくとも部分的に前記複数の半導体ダイの前記品質及び位置にそれぞれ基づいている、
請求項3に記載のシステム。 - 前記第1の搬送機構は、前記特定の品質を有する半導体ダイが整列されるように前記第1の基材を搬送する
請求項1〜8のいずれか1項に記載のシステム。
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