CN101165909A - 非易失性半导体存储装置及其制造方法 - Google Patents
非易失性半导体存储装置及其制造方法 Download PDFInfo
- Publication number
- CN101165909A CN101165909A CNA2007101930008A CN200710193000A CN101165909A CN 101165909 A CN101165909 A CN 101165909A CN A2007101930008 A CNA2007101930008 A CN A2007101930008A CN 200710193000 A CN200710193000 A CN 200710193000A CN 101165909 A CN101165909 A CN 101165909A
- Authority
- CN
- China
- Prior art keywords
- film
- conductor layer
- technology
- substrate
- face
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 142
- 238000003860 storage Methods 0.000 title claims abstract description 31
- 238000000034 method Methods 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title description 18
- 239000000758 substrate Substances 0.000 claims abstract description 70
- 239000004020 conductor Substances 0.000 claims abstract description 38
- 239000010410 layer Substances 0.000 claims description 119
- 238000005516 engineering process Methods 0.000 claims description 93
- 239000011229 interlayer Substances 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 13
- 239000012528 membrane Substances 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 61
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 50
- 229910052814 silicon oxide Inorganic materials 0.000 description 48
- 229910052581 Si3N4 Inorganic materials 0.000 description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 30
- 230000002093 peripheral effect Effects 0.000 description 25
- JWBISRKEEZGPFB-UHFFFAOYSA-N n-(3-cyanophenyl)-2-methylpropanamide Chemical compound CC(C)C(=O)NC1=CC=CC(C#N)=C1 JWBISRKEEZGPFB-UHFFFAOYSA-N 0.000 description 17
- 238000001020 plasma etching Methods 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 12
- 229920005591 polysilicon Polymers 0.000 description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 10
- 238000005530 etching Methods 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 9
- 239000010937 tungsten Substances 0.000 description 9
- 229910052721 tungsten Inorganic materials 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 101100186130 Arabidopsis thaliana NAC052 gene Proteins 0.000 description 3
- 101100529509 Arabidopsis thaliana RECQL4A gene Proteins 0.000 description 3
- 101100203168 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SGS1 gene Proteins 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 2
- 101000578349 Homo sapiens Nucleolar MIF4G domain-containing protein 1 Proteins 0.000 description 2
- 102100027969 Nucleolar MIF4G domain-containing protein 1 Human genes 0.000 description 2
- 101150056203 SGS3 gene Proteins 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 101100292586 Caenorhabditis elegans mtr-4 gene Proteins 0.000 description 1
- 102100038712 Cap-specific mRNA (nucleoside-2'-O-)-methyltransferase 1 Human genes 0.000 description 1
- 101710203121 Cap-specific mRNA (nucleoside-2'-O-)-methyltransferase 1 Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
- H10B43/35—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region with cell select transistors, e.g. NAND
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Abstract
Description
读 | 写″0″ | 写″1″ | 擦除(选择的) | 擦除(未选择的) | |
BL | Vb1 | 0 | Vdd | V擦除 | V擦除 |
SGD | Vdd | Vdd | Vdd | Vera del | Vera del |
WL4 | V读 | V通 | V通 | 0 | 开 |
WL3 | 0 | Vprog | Vprog | 0 | 开 |
WL2 | V读 | V通 | V通 | 0 | 开 |
WL1 | V读 | V通 | V通 | 0 | 开 |
SGS | Vdd | V关 | V关 | Vera del | Vera del |
SL | 0 | Vdd | Vdd | 开 | 开 |
PW | 0 | 0 | 0 | V擦除 | V擦除 |
Claims (19)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP283117/2006 | 2006-10-17 | ||
JP2006283117A JP5100080B2 (ja) | 2006-10-17 | 2006-10-17 | 不揮発性半導体記憶装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101165909A true CN101165909A (zh) | 2008-04-23 |
CN100573888C CN100573888C (zh) | 2009-12-23 |
Family
ID=39329085
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB2007101930008A Active CN100573888C (zh) | 2006-10-17 | 2007-10-17 | 非易失性半导体存储装置及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7952136B2 (zh) |
JP (1) | JP5100080B2 (zh) |
KR (2) | KR100938514B1 (zh) |
CN (1) | CN100573888C (zh) |
TW (1) | TWI355071B (zh) |
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102005456A (zh) * | 2009-08-26 | 2011-04-06 | 三星电子株式会社 | 包括三维存储单元阵列的半导体存储器件 |
CN102148059A (zh) * | 2010-02-09 | 2011-08-10 | 三星电子株式会社 | 非易失性存储器件、其操作方法和包括其的存储系统 |
CN102163456A (zh) * | 2010-02-17 | 2011-08-24 | 三星电子株式会社 | 非易失性存储器件、其操作方法以及包括其的存储系统 |
CN102315173A (zh) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | 三维多值非挥发存储器的制备方法 |
CN102915955A (zh) * | 2011-08-04 | 2013-02-06 | 三星电子株式会社 | 半导体器件及其制造方法 |
CN103943572A (zh) * | 2013-01-23 | 2014-07-23 | 旺宏电子股份有限公司 | 集成电路装置及其制造方法 |
US8908431B2 (en) | 2010-02-17 | 2014-12-09 | Samsung Electronics Co., Ltd. | Control method of nonvolatile memory device |
US8923060B2 (en) | 2010-02-17 | 2014-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and operating methods thereof |
US8929145B2 (en) | 2010-02-18 | 2015-01-06 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, programming method thereof and memory system including the same |
US8964476B2 (en) | 2010-02-17 | 2015-02-24 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
CN104752364A (zh) * | 2015-03-23 | 2015-07-01 | 武汉新芯集成电路制造有限公司 | 3d闪存的制造方法 |
US9324440B2 (en) | 2010-02-09 | 2016-04-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US9378831B2 (en) | 2010-02-09 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US9741438B2 (en) | 2013-09-16 | 2017-08-22 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and program method thereof |
CN107452746A (zh) * | 2016-04-25 | 2017-12-08 | 三星电子株式会社 | 三维半导体器件 |
US9881685B2 (en) | 2010-08-26 | 2018-01-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof and memory system including the same |
CN109754837A (zh) * | 2017-11-07 | 2019-05-14 | 三星电子株式会社 | 具有三维存储单元阵列的非易失存储器件的地址调度方法 |
CN112768458A (zh) * | 2021-01-29 | 2021-05-07 | 长江存储科技有限责任公司 | 一种3d nand存储器件及其制造方法 |
US11681616B2 (en) | 2010-08-20 | 2023-06-20 | Samsung Electronics Co, Ltd. | Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays |
Families Citing this family (243)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4909735B2 (ja) * | 2006-06-27 | 2012-04-04 | 株式会社東芝 | 不揮発性半導体メモリ |
JP2008192857A (ja) * | 2007-02-05 | 2008-08-21 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP4445514B2 (ja) | 2007-04-11 | 2010-04-07 | 株式会社東芝 | 半導体記憶装置 |
JP4455615B2 (ja) * | 2007-06-20 | 2010-04-21 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2009004510A (ja) | 2007-06-20 | 2009-01-08 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP2009016400A (ja) | 2007-06-29 | 2009-01-22 | Toshiba Corp | 積層配線構造体及びその製造方法並びに半導体装置及びその製造方法 |
CN101911287B (zh) * | 2007-12-27 | 2013-05-15 | 株式会社东芝 | 半导体存储器件及其制造方法 |
JP5259242B2 (ja) | 2008-04-23 | 2013-08-07 | 株式会社東芝 | 三次元積層不揮発性半導体メモリ |
JP2009266946A (ja) | 2008-04-23 | 2009-11-12 | Toshiba Corp | 三次元積層不揮発性半導体メモリ |
JP5288877B2 (ja) * | 2008-05-09 | 2013-09-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
FR2933802B1 (fr) * | 2008-07-10 | 2010-10-15 | Commissariat Energie Atomique | Structure et procede de realisation d'un dispositif microelectronique de memoire 3d de type flash nand. |
JP2010034109A (ja) * | 2008-07-25 | 2010-02-12 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR20080091416A (ko) * | 2008-08-14 | 2008-10-13 | 김성동 | 3차원 반도체 장치, 그 제조 방법 및 동작 방법 |
JP5279403B2 (ja) * | 2008-08-18 | 2013-09-04 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP5086959B2 (ja) * | 2008-09-26 | 2012-11-28 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5388537B2 (ja) | 2008-10-20 | 2014-01-15 | 株式会社東芝 | 不揮発性半導体記憶装置、及びその製造方法 |
KR101503876B1 (ko) * | 2009-03-06 | 2015-03-20 | 삼성전자주식회사 | 비휘발성 메모리 소자 |
JP2010118530A (ja) * | 2008-11-13 | 2010-05-27 | Toshiba Corp | 不揮発性半導体記憶装置 |
JP4719910B2 (ja) * | 2008-11-26 | 2011-07-06 | 国立大学法人東北大学 | 半導体装置の製造方法 |
US8541831B2 (en) | 2008-12-03 | 2013-09-24 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and method for fabricating the same |
KR101524823B1 (ko) | 2009-01-05 | 2015-06-01 | 삼성전자주식회사 | 3차원 반도체 소자 |
JP5364394B2 (ja) * | 2009-02-16 | 2013-12-11 | 株式会社東芝 | 不揮発性半導体記憶装置 |
KR101539699B1 (ko) | 2009-03-19 | 2015-07-27 | 삼성전자주식회사 | 3차원 구조의 비휘발성 메모리 소자 및 그 제조방법 |
US8284601B2 (en) | 2009-04-01 | 2012-10-09 | Samsung Electronics Co., Ltd. | Semiconductor memory device comprising three-dimensional memory cell array |
KR101660944B1 (ko) | 2009-07-22 | 2016-09-28 | 삼성전자 주식회사 | 수직형의 비휘발성 메모리 소자 및 그 제조 방법 |
KR101045073B1 (ko) | 2009-08-07 | 2011-06-29 | 주식회사 하이닉스반도체 | 수직채널형 비휘발성 메모리 소자 및 그 제조 방법 |
KR101698193B1 (ko) | 2009-09-15 | 2017-01-19 | 삼성전자주식회사 | 3차원 반도체 메모리 장치 및 그 제조 방법 |
US11374118B2 (en) | 2009-10-12 | 2022-06-28 | Monolithic 3D Inc. | Method to form a 3D integrated circuit |
US10388863B2 (en) | 2009-10-12 | 2019-08-20 | Monolithic 3D Inc. | 3D memory device and structure |
US10910364B2 (en) | 2009-10-12 | 2021-02-02 | Monolitaic 3D Inc. | 3D semiconductor device |
US12027518B1 (en) | 2009-10-12 | 2024-07-02 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
US11984445B2 (en) | 2009-10-12 | 2024-05-14 | Monolithic 3D Inc. | 3D semiconductor devices and structures with metal layers |
US11018133B2 (en) | 2009-10-12 | 2021-05-25 | Monolithic 3D Inc. | 3D integrated circuit |
US10354995B2 (en) | 2009-10-12 | 2019-07-16 | Monolithic 3D Inc. | Semiconductor memory device and structure |
JP2011100921A (ja) * | 2009-11-09 | 2011-05-19 | Toshiba Corp | 半導体装置及びその製造方法 |
KR101559958B1 (ko) | 2009-12-18 | 2015-10-13 | 삼성전자주식회사 | 3차원 반도체 장치의 제조 방법 및 이에 따라 제조된 3차원 반도체 장치 |
KR101692520B1 (ko) * | 2010-02-17 | 2017-01-04 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US8553466B2 (en) * | 2010-03-04 | 2013-10-08 | Samsung Electronics Co., Ltd. | Non-volatile memory device, erasing method thereof, and memory system including the same |
US8792282B2 (en) | 2010-03-04 | 2014-07-29 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, memory systems and computing systems |
KR20110104317A (ko) * | 2010-03-16 | 2011-09-22 | 삼성전자주식회사 | 수직 채널 구조의 비휘발성 메모리 소자 |
KR101807539B1 (ko) * | 2010-08-20 | 2017-12-12 | 삼성전자주식회사 | 3차원 비휘발성 메모리 장치의 메모리 셀 어레이의 어드레스 스케쥴링 방법 |
KR101778287B1 (ko) * | 2010-08-30 | 2017-09-14 | 삼성전자주식회사 | 반도체 메모리 소자 및 그 제조방법 |
US11482440B2 (en) | 2010-12-16 | 2022-10-25 | Monolithic 3D Inc. | 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits |
US10497713B2 (en) | 2010-11-18 | 2019-12-03 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11227897B2 (en) | 2010-10-11 | 2022-01-18 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US11158674B2 (en) | 2010-10-11 | 2021-10-26 | Monolithic 3D Inc. | Method to produce a 3D semiconductor device and structure |
US11469271B2 (en) | 2010-10-11 | 2022-10-11 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US11024673B1 (en) | 2010-10-11 | 2021-06-01 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11315980B1 (en) | 2010-10-11 | 2022-04-26 | Monolithic 3D Inc. | 3D semiconductor device and structure with transistors |
US11257867B1 (en) | 2010-10-11 | 2022-02-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with oxide bonds |
US10896931B1 (en) | 2010-10-11 | 2021-01-19 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11018191B1 (en) | 2010-10-11 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11600667B1 (en) | 2010-10-11 | 2023-03-07 | Monolithic 3D Inc. | Method to produce 3D semiconductor devices and structures with memory |
US10679977B2 (en) | 2010-10-13 | 2020-06-09 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US11327227B2 (en) | 2010-10-13 | 2022-05-10 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US11043523B1 (en) | 2010-10-13 | 2021-06-22 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11133344B2 (en) | 2010-10-13 | 2021-09-28 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US11404466B2 (en) | 2010-10-13 | 2022-08-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors |
US12094892B2 (en) | 2010-10-13 | 2024-09-17 | Monolithic 3D Inc. | 3D micro display device and structure |
US10833108B2 (en) | 2010-10-13 | 2020-11-10 | Monolithic 3D Inc. | 3D microdisplay device and structure |
US12080743B2 (en) | 2010-10-13 | 2024-09-03 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11929372B2 (en) | 2010-10-13 | 2024-03-12 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11855100B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11163112B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with electromagnetic modulators |
US11694922B2 (en) | 2010-10-13 | 2023-07-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11605663B2 (en) | 2010-10-13 | 2023-03-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11855114B2 (en) | 2010-10-13 | 2023-12-26 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US11984438B2 (en) | 2010-10-13 | 2024-05-14 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US10943934B2 (en) | 2010-10-13 | 2021-03-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US10978501B1 (en) | 2010-10-13 | 2021-04-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11437368B2 (en) | 2010-10-13 | 2022-09-06 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with oxide bonding |
US11164898B2 (en) | 2010-10-13 | 2021-11-02 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11063071B1 (en) | 2010-10-13 | 2021-07-13 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with waveguides |
US11869915B2 (en) | 2010-10-13 | 2024-01-09 | Monolithic 3D Inc. | Multilevel semiconductor device and structure with image sensors and wafer bonding |
US10998374B1 (en) | 2010-10-13 | 2021-05-04 | Monolithic 3D Inc. | Multilevel semiconductor device and structure |
US11784082B2 (en) | 2010-11-18 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11121021B2 (en) | 2010-11-18 | 2021-09-14 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11443971B2 (en) | 2010-11-18 | 2022-09-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11610802B2 (en) | 2010-11-18 | 2023-03-21 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes |
US11615977B2 (en) | 2010-11-18 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11521888B2 (en) | 2010-11-18 | 2022-12-06 | Monolithic 3D Inc. | 3D semiconductor device and structure with high-k metal gate transistors |
US11923230B1 (en) | 2010-11-18 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11355380B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | Methods for producing 3D semiconductor memory device and structure utilizing alignment marks |
US11569117B2 (en) | 2010-11-18 | 2023-01-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11211279B2 (en) | 2010-11-18 | 2021-12-28 | Monolithic 3D Inc. | Method for processing a 3D integrated circuit and structure |
US11004719B1 (en) | 2010-11-18 | 2021-05-11 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11107721B2 (en) | 2010-11-18 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure with NAND logic |
US11862503B2 (en) | 2010-11-18 | 2024-01-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11018042B1 (en) | 2010-11-18 | 2021-05-25 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11804396B2 (en) | 2010-11-18 | 2023-10-31 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11854857B1 (en) | 2010-11-18 | 2023-12-26 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11901210B2 (en) | 2010-11-18 | 2024-02-13 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11735462B2 (en) | 2010-11-18 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with single-crystal layers |
US11031275B2 (en) | 2010-11-18 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure with memory |
US11508605B2 (en) | 2010-11-18 | 2022-11-22 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11094576B1 (en) | 2010-11-18 | 2021-08-17 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US11482438B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device and structure |
US12033884B2 (en) | 2010-11-18 | 2024-07-09 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers |
US11482439B2 (en) | 2010-11-18 | 2022-10-25 | Monolithic 3D Inc. | Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors |
US11164770B1 (en) | 2010-11-18 | 2021-11-02 | Monolithic 3D Inc. | Method for producing a 3D semiconductor memory device and structure |
US12068187B2 (en) | 2010-11-18 | 2024-08-20 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding and DRAM memory cells |
US11355381B2 (en) | 2010-11-18 | 2022-06-07 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US11495484B2 (en) | 2010-11-18 | 2022-11-08 | Monolithic 3D Inc. | 3D semiconductor devices and structures with at least two single-crystal layers |
KR101771619B1 (ko) | 2011-02-09 | 2017-08-28 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 그것의 구동 방법 |
US8559231B2 (en) * | 2011-03-08 | 2013-10-15 | Micron Technology, Inc. | Sense operation in a stacked memory array device |
JP2012204430A (ja) * | 2011-03-24 | 2012-10-22 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
JP5351201B2 (ja) * | 2011-03-25 | 2013-11-27 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2012204684A (ja) * | 2011-03-25 | 2012-10-22 | Toshiba Corp | 不揮発性半導体記憶装置 |
KR101762828B1 (ko) * | 2011-04-05 | 2017-07-31 | 삼성전자주식회사 | 불휘발성 메모리 장치 및 불휘발성 메모리 장치의 동작 방법 |
US8860117B2 (en) | 2011-04-28 | 2014-10-14 | Micron Technology, Inc. | Semiconductor apparatus with multiple tiers of memory cells with peripheral transistors, and methods |
KR20120126399A (ko) * | 2011-05-11 | 2012-11-21 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
KR101182942B1 (ko) | 2011-05-24 | 2012-09-13 | 에스케이하이닉스 주식회사 | 3차원 구조의 비휘발성 메모리 소자 및 그 제조 방법 |
US10388568B2 (en) | 2011-06-28 | 2019-08-20 | Monolithic 3D Inc. | 3D semiconductor device and system |
KR101807250B1 (ko) | 2011-07-11 | 2017-12-11 | 삼성전자주식회사 | 3차원 반도체 장치의 제조 방법 |
KR101808822B1 (ko) * | 2011-08-04 | 2017-12-14 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
US11694944B1 (en) | 2012-04-09 | 2023-07-04 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US10600888B2 (en) | 2012-04-09 | 2020-03-24 | Monolithic 3D Inc. | 3D semiconductor device |
US11735501B1 (en) | 2012-04-09 | 2023-08-22 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11594473B2 (en) | 2012-04-09 | 2023-02-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11088050B2 (en) | 2012-04-09 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers |
US11164811B2 (en) | 2012-04-09 | 2021-11-02 | Monolithic 3D Inc. | 3D semiconductor device with isolation layers and oxide-to-oxide bonding |
US11476181B1 (en) | 2012-04-09 | 2022-10-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11410912B2 (en) | 2012-04-09 | 2022-08-09 | Monolithic 3D Inc. | 3D semiconductor device with vias and isolation layers |
US11881443B2 (en) | 2012-04-09 | 2024-01-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US11616004B1 (en) | 2012-04-09 | 2023-03-28 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and a connective path |
US8964474B2 (en) | 2012-06-15 | 2015-02-24 | Micron Technology, Inc. | Architecture for 3-D NAND memory |
KR101990904B1 (ko) | 2012-07-17 | 2019-06-19 | 삼성전자주식회사 | 수직형 반도체 소자 |
KR101970941B1 (ko) | 2012-08-20 | 2019-08-13 | 삼성전자 주식회사 | 3차원 비휘발성 메모리 장치 및 그 제조 방법 |
US8884356B2 (en) | 2012-09-05 | 2014-11-11 | Kabushiki Kaisha Toshiba | Nonvolatile semiconductor memory device and method for manufacturing same |
US12051674B2 (en) | 2012-12-22 | 2024-07-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11784169B2 (en) | 2012-12-22 | 2023-10-10 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11961827B1 (en) | 2012-12-22 | 2024-04-16 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11309292B2 (en) | 2012-12-22 | 2022-04-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11217565B2 (en) | 2012-12-22 | 2022-01-04 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11018116B2 (en) | 2012-12-22 | 2021-05-25 | Monolithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11967583B2 (en) | 2012-12-22 | 2024-04-23 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11916045B2 (en) | 2012-12-22 | 2024-02-27 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11063024B1 (en) | 2012-12-22 | 2021-07-13 | Monlithic 3D Inc. | Method to form a 3D semiconductor device and structure |
US11004694B1 (en) | 2012-12-29 | 2021-05-11 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11430668B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US10651054B2 (en) | 2012-12-29 | 2020-05-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10903089B1 (en) | 2012-12-29 | 2021-01-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10892169B2 (en) | 2012-12-29 | 2021-01-12 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10600657B2 (en) | 2012-12-29 | 2020-03-24 | Monolithic 3D Inc | 3D semiconductor device and structure |
US11177140B2 (en) | 2012-12-29 | 2021-11-16 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11430667B2 (en) | 2012-12-29 | 2022-08-30 | Monolithic 3D Inc. | 3D semiconductor device and structure with bonding |
US11087995B1 (en) | 2012-12-29 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
KR102024723B1 (ko) | 2013-01-02 | 2019-09-24 | 삼성전자주식회사 | 3차원 반도체 장치 |
US12094965B2 (en) | 2013-03-11 | 2024-09-17 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US11935949B1 (en) | 2013-03-11 | 2024-03-19 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US11869965B2 (en) | 2013-03-11 | 2024-01-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers and memory cells |
US10325651B2 (en) | 2013-03-11 | 2019-06-18 | Monolithic 3D Inc. | 3D semiconductor device with stacked memory |
US8902663B1 (en) | 2013-03-11 | 2014-12-02 | Monolithic 3D Inc. | Method of maintaining a memory state |
US11923374B2 (en) | 2013-03-12 | 2024-03-05 | Monolithic 3D Inc. | 3D semiconductor device and structure with metal layers |
US11398569B2 (en) | 2013-03-12 | 2022-07-26 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11088130B2 (en) | 2014-01-28 | 2021-08-10 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10840239B2 (en) | 2014-08-26 | 2020-11-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US8981567B2 (en) | 2013-03-13 | 2015-03-17 | Macronix International Co., Ltd. | 3-D IC device with enhanced contact area |
US10224279B2 (en) | 2013-03-15 | 2019-03-05 | Monolithic 3D Inc. | Semiconductor device and structure |
KR102037840B1 (ko) | 2013-04-11 | 2019-10-29 | 삼성전자주식회사 | 반도체 장치의 연결구조 및 제조 방법 |
US11574109B1 (en) | 2013-04-15 | 2023-02-07 | Monolithic 3D Inc | Automation methods for 3D integrated circuits and devices |
US11270055B1 (en) | 2013-04-15 | 2022-03-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11487928B2 (en) | 2013-04-15 | 2022-11-01 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11030371B2 (en) | 2013-04-15 | 2021-06-08 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11341309B1 (en) | 2013-04-15 | 2022-05-24 | Monolithic 3D Inc. | Automation for monolithic 3D devices |
US11720736B2 (en) | 2013-04-15 | 2023-08-08 | Monolithic 3D Inc. | Automation methods for 3D integrated circuits and devices |
JP2014229740A (ja) * | 2013-05-22 | 2014-12-08 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR20140148070A (ko) * | 2013-06-21 | 2014-12-31 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 제조 방법 |
US9620205B2 (en) | 2013-07-10 | 2017-04-11 | Intermolecular, Inc. | All around electrode for novel 3D RRAM applications |
KR102083483B1 (ko) * | 2013-08-12 | 2020-03-02 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그 제조 방법 |
JP2015056642A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 半導体記憶装置 |
KR102128469B1 (ko) * | 2013-11-08 | 2020-06-30 | 삼성전자주식회사 | 반도체 장치 |
KR102150969B1 (ko) | 2013-12-05 | 2020-10-26 | 삼성전자주식회사 | 반도체 장치 및 그 제조방법 |
US11031394B1 (en) | 2014-01-28 | 2021-06-08 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US12094829B2 (en) | 2014-01-28 | 2024-09-17 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11107808B1 (en) | 2014-01-28 | 2021-08-31 | Monolithic 3D Inc. | 3D semiconductor device and structure |
KR102245649B1 (ko) | 2014-03-31 | 2021-04-29 | 삼성전자주식회사 | 반도체 장치 및 그 제조 방법 |
JP5889486B1 (ja) * | 2014-06-10 | 2016-03-22 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッドUnisantis Electronics Singapore Pte Ltd. | 柱状半導体メモリ装置及びその製造方法 |
JP2016035991A (ja) | 2014-08-04 | 2016-03-17 | 株式会社東芝 | 半導体記憶装置及びその製造方法 |
KR102270099B1 (ko) | 2014-12-08 | 2021-06-29 | 삼성전자주식회사 | 더미 패턴을 갖는 반도체 소자 및 그 제조방법 |
US11056468B1 (en) | 2015-04-19 | 2021-07-06 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11011507B1 (en) | 2015-04-19 | 2021-05-18 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US10381328B2 (en) | 2015-04-19 | 2019-08-13 | Monolithic 3D Inc. | Semiconductor device and structure |
US10825779B2 (en) | 2015-04-19 | 2020-11-03 | Monolithic 3D Inc. | 3D semiconductor device and structure |
KR101616091B1 (ko) * | 2015-04-20 | 2016-04-28 | 삼성전자주식회사 | 모놀리식 3차원 nand 스트링 |
US9570392B2 (en) * | 2015-04-30 | 2017-02-14 | Kabushiki Kaisha Toshiba | Memory device and method for manufacturing the same |
KR102342548B1 (ko) * | 2015-05-22 | 2021-12-24 | 삼성전자주식회사 | 메모리 장치 |
US11956952B2 (en) | 2015-08-23 | 2024-04-09 | Monolithic 3D Inc. | Semiconductor memory device and structure |
US11114427B2 (en) | 2015-11-07 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor processor and memory device and structure |
US11978731B2 (en) | 2015-09-21 | 2024-05-07 | Monolithic 3D Inc. | Method to produce a multi-level semiconductor memory device and structure |
US11937422B2 (en) | 2015-11-07 | 2024-03-19 | Monolithic 3D Inc. | Semiconductor memory device and structure |
WO2017053329A1 (en) | 2015-09-21 | 2017-03-30 | Monolithic 3D Inc | 3d semiconductor device and structure |
US10522225B1 (en) | 2015-10-02 | 2019-12-31 | Monolithic 3D Inc. | Semiconductor device with non-volatile memory |
US12035531B2 (en) | 2015-10-24 | 2024-07-09 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US11991884B1 (en) | 2015-10-24 | 2024-05-21 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US10847540B2 (en) | 2015-10-24 | 2020-11-24 | Monolithic 3D Inc. | 3D semiconductor memory device and structure |
US10418369B2 (en) | 2015-10-24 | 2019-09-17 | Monolithic 3D Inc. | Multi-level semiconductor memory device and structure |
US12016181B2 (en) | 2015-10-24 | 2024-06-18 | Monolithic 3D Inc. | 3D semiconductor device and structure with logic and memory |
US11114464B2 (en) | 2015-10-24 | 2021-09-07 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US11296115B1 (en) | 2015-10-24 | 2022-04-05 | Monolithic 3D Inc. | 3D semiconductor device and structure |
US20170148812A1 (en) * | 2015-11-19 | 2017-05-25 | Fu-Chang Hsu | Methods and apparatus for a 3d array inside a substrate trench |
US9741734B2 (en) * | 2015-12-15 | 2017-08-22 | Intel Corporation | Memory devices and systems having reduced bit line to drain select gate shorting and associated methods |
US10050048B2 (en) | 2016-02-19 | 2018-08-14 | Toshiba Memory Corporation | Semiconductor memory device and method of manufacturing semiconductor memory device |
US9922991B2 (en) * | 2016-03-16 | 2018-03-20 | Toshiba Memory Corporation | Semiconductor memory device and method for manufacturing same |
JP6524006B2 (ja) | 2016-03-18 | 2019-06-05 | 東芝メモリ株式会社 | 半導体記憶装置 |
US9679650B1 (en) | 2016-05-06 | 2017-06-13 | Micron Technology, Inc. | 3D NAND memory Z-decoder |
KR20170130009A (ko) | 2016-05-17 | 2017-11-28 | 삼성전자주식회사 | 3차원 반도체 장치 |
CN105914202B (zh) * | 2016-06-13 | 2018-11-13 | 上海珏芯光电科技有限公司 | 显示驱动背板、显示器以及制造方法 |
US9905573B1 (en) * | 2016-08-30 | 2018-02-27 | Sandisk Technologies Llc | Three-dimensional memory device with angled word lines and method of making thereof |
KR101736455B1 (ko) | 2016-09-06 | 2017-05-17 | 삼성전자주식회사 | 불휘발성 메모리 장치, 그것의 동작 방법, 그리고 그것을 포함하는 메모리 시스템 |
US11329059B1 (en) | 2016-10-10 | 2022-05-10 | Monolithic 3D Inc. | 3D memory devices and structures with thinned single crystal substrates |
US11251149B2 (en) | 2016-10-10 | 2022-02-15 | Monolithic 3D Inc. | 3D memory device and structure |
US11930648B1 (en) | 2016-10-10 | 2024-03-12 | Monolithic 3D Inc. | 3D memory devices and structures with metal layers |
US11869591B2 (en) | 2016-10-10 | 2024-01-09 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US11812620B2 (en) | 2016-10-10 | 2023-11-07 | Monolithic 3D Inc. | 3D DRAM memory devices and structures with control circuits |
US11711928B2 (en) | 2016-10-10 | 2023-07-25 | Monolithic 3D Inc. | 3D memory devices and structures with control circuits |
US10515979B2 (en) | 2017-02-03 | 2019-12-24 | Samsung Electronics Co., Ltd. | Three-dimensional semiconductor devices with inclined gate electrodes |
JP2018148071A (ja) * | 2017-03-07 | 2018-09-20 | 東芝メモリ株式会社 | 記憶装置 |
US10192877B2 (en) * | 2017-03-07 | 2019-01-29 | Sandisk Technologies Llc | Three-dimensional memory device with level-shifted staircase structures and method of making thereof |
KR20190013347A (ko) * | 2017-08-01 | 2019-02-11 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
CN107527918B (zh) * | 2017-08-31 | 2019-02-12 | 长江存储科技有限责任公司 | 一种3d nand存储器存储单元结构及其制造方法 |
JP6875236B2 (ja) * | 2017-09-14 | 2021-05-19 | キオクシア株式会社 | 半導体記憶装置 |
JP2019054162A (ja) * | 2017-09-15 | 2019-04-04 | 東芝メモリ株式会社 | 記憶装置の製造方法および記憶装置 |
US10629606B2 (en) | 2017-11-07 | 2020-04-21 | Sandisk Technologies Llc | Three-dimensional memory device having level-shifted staircases and method of making thereof |
US10211215B1 (en) | 2017-11-30 | 2019-02-19 | Sandisk Technologies Llc | Three-dimensional memory device containing word lines having vertical protrusion regions and methods of making the same |
US10217746B1 (en) | 2017-11-30 | 2019-02-26 | Sandisk Technologies Llc | Three-dimensional memory device having L-shaped word lines and a support structure and methods of making the same |
US10181442B1 (en) | 2017-11-30 | 2019-01-15 | Sandisk Technologies Llc | Three-dimensional memory device having L-shaped word lines and methods of making the same |
US10546870B2 (en) | 2018-01-18 | 2020-01-28 | Sandisk Technologies Llc | Three-dimensional memory device containing offset column stairs and method of making the same |
US10804284B2 (en) | 2018-04-11 | 2020-10-13 | Sandisk Technologies Llc | Three-dimensional memory device containing bidirectional taper staircases and methods of making the same |
KR102635182B1 (ko) | 2018-07-12 | 2024-02-08 | 삼성전자주식회사 | 반도체 메모리 장치 |
JP2020155579A (ja) | 2019-03-20 | 2020-09-24 | キオクシア株式会社 | 半導体記憶装置 |
US11763864B2 (en) | 2019-04-08 | 2023-09-19 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures with bit-line pillars |
US11158652B1 (en) | 2019-04-08 | 2021-10-26 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US10892016B1 (en) | 2019-04-08 | 2021-01-12 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11018156B2 (en) | 2019-04-08 | 2021-05-25 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11296106B2 (en) | 2019-04-08 | 2022-04-05 | Monolithic 3D Inc. | 3D memory semiconductor devices and structures |
US11450381B2 (en) | 2019-08-21 | 2022-09-20 | Micron Technology, Inc. | Multi-deck memory device including buffer circuitry under array |
JP2021044295A (ja) | 2019-09-06 | 2021-03-18 | キオクシア株式会社 | 半導体装置およびその製造方法 |
JP2021150409A (ja) | 2020-03-17 | 2021-09-27 | キオクシア株式会社 | 半導体記憶装置 |
WO2023007538A1 (ja) * | 2021-07-26 | 2023-02-02 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体素子を用いたメモリ装置 |
JP2022144164A (ja) | 2021-03-18 | 2022-10-03 | キオクシア株式会社 | 半導体装置、テンプレート、およびテンプレートの製造方法 |
US20230146831A1 (en) * | 2021-11-08 | 2023-05-11 | Applied Materials, Inc. | L-type wordline connection structure for three-dimensional memory |
WO2023095324A1 (ja) * | 2021-11-29 | 2023-06-01 | ユニサンティス エレクトロニクス シンガポール プライベート リミテッド | 半導体メモリ装置と、その製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3229012B2 (ja) * | 1992-05-21 | 2001-11-12 | 株式会社東芝 | 半導体装置の製造方法 |
JP3651689B2 (ja) * | 1993-05-28 | 2005-05-25 | 株式会社東芝 | Nand型不揮発性半導体記憶装置及びその製造方法 |
KR0165398B1 (ko) * | 1995-05-26 | 1998-12-15 | 윤종용 | 버티칼 트랜지스터의 제조방법 |
US6380581B1 (en) | 1999-02-26 | 2002-04-30 | Micron Technology, Inc. | DRAM technology compatible non volatile memory cells with capacitors connected to the gates of the transistors |
JP4226205B2 (ja) * | 2000-08-11 | 2009-02-18 | 富士雄 舛岡 | 半導体記憶装置の製造方法 |
JP4422944B2 (ja) | 2001-03-26 | 2010-03-03 | ヘイロ エルエスアイ インコーポレイテッド | Monosメモリアレー |
JP3566944B2 (ja) | 2001-06-23 | 2004-09-15 | 富士雄 舛岡 | 半導体記憶装置及びその製造方法 |
KR100483035B1 (ko) * | 2001-03-30 | 2005-04-15 | 샤프 가부시키가이샤 | 반도체 기억장치 및 그 제조방법 |
JP4108537B2 (ja) | 2003-05-28 | 2008-06-25 | 富士雄 舛岡 | 半導体装置 |
JP3961994B2 (ja) * | 2003-07-28 | 2007-08-22 | 株式会社東芝 | 半導体記憶装置 |
JP2005093808A (ja) * | 2003-09-18 | 2005-04-07 | Fujio Masuoka | メモリセルユニット、それを備えてなる不揮発性半導体記憶装置及びメモリセルアレイの駆動方法 |
JP2005311300A (ja) | 2004-03-26 | 2005-11-04 | Toshiba Corp | 半導体記憶装置及びその製造方法 |
KR100674952B1 (ko) * | 2005-02-05 | 2007-01-26 | 삼성전자주식회사 | 3차원 플래쉬 메모리 소자 및 그 제조방법 |
JP5016832B2 (ja) * | 2006-03-27 | 2012-09-05 | 株式会社東芝 | 不揮発性半導体記憶装置及びその製造方法 |
JP2008192857A (ja) * | 2007-02-05 | 2008-08-21 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
-
2006
- 2006-10-17 JP JP2006283117A patent/JP5100080B2/ja active Active
-
2007
- 2007-10-17 TW TW096138931A patent/TWI355071B/zh active
- 2007-10-17 CN CNB2007101930008A patent/CN100573888C/zh active Active
- 2007-10-17 KR KR1020070104665A patent/KR100938514B1/ko not_active IP Right Cessation
- 2007-10-17 US US11/874,004 patent/US7952136B2/en active Active
-
2009
- 2009-03-30 KR KR1020090027142A patent/KR100989231B1/ko not_active IP Right Cessation
-
2011
- 2011-04-13 US US13/085,622 patent/US8318602B2/en active Active
Cited By (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102005456A (zh) * | 2009-08-26 | 2011-04-06 | 三星电子株式会社 | 包括三维存储单元阵列的半导体存储器件 |
CN102148059A (zh) * | 2010-02-09 | 2011-08-10 | 三星电子株式会社 | 非易失性存储器件、其操作方法和包括其的存储系统 |
US10217516B2 (en) | 2010-02-09 | 2019-02-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US9378831B2 (en) | 2010-02-09 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US9378833B2 (en) | 2010-02-09 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US9330769B2 (en) | 2010-02-09 | 2016-05-03 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US9324440B2 (en) | 2010-02-09 | 2016-04-26 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US8917558B2 (en) | 2010-02-09 | 2014-12-23 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
CN102148059B (zh) * | 2010-02-09 | 2015-07-22 | 三星电子株式会社 | 非易失性存储器件、其操作方法和包括其的存储系统 |
US8908431B2 (en) | 2010-02-17 | 2014-12-09 | Samsung Electronics Co., Ltd. | Control method of nonvolatile memory device |
US10650903B2 (en) | 2010-02-17 | 2020-05-12 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US8964476B2 (en) | 2010-02-17 | 2015-02-24 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
CN106169304B (zh) * | 2010-02-17 | 2019-11-05 | 三星电子株式会社 | 擦除和刷新非易失性存储器件的方法 |
US8923053B2 (en) | 2010-02-17 | 2014-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof, and memory system including the same |
US9147492B2 (en) | 2010-02-17 | 2015-09-29 | Samsung Electronics Co., Ltd. | Control method of nonvolatile memory device |
US9747995B2 (en) | 2010-02-17 | 2017-08-29 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices, operating methods thereof and memory systems including the same |
US8923060B2 (en) | 2010-02-17 | 2014-12-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices and operating methods thereof |
US9330770B2 (en) | 2010-02-17 | 2016-05-03 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US11062784B2 (en) | 2010-02-17 | 2021-07-13 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US11715537B2 (en) | 2010-02-17 | 2023-08-01 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US9390803B2 (en) | 2010-02-17 | 2016-07-12 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
CN102163456B (zh) * | 2010-02-17 | 2016-08-24 | 三星电子株式会社 | 非易失性存储器件、其操作方法以及包括其的存储系统 |
CN102163456A (zh) * | 2010-02-17 | 2011-08-24 | 三星电子株式会社 | 非易失性存储器件、其操作方法以及包括其的存储系统 |
CN106169304A (zh) * | 2010-02-17 | 2016-11-30 | 三星电子株式会社 | 擦除和刷新非易失性存储器件的方法 |
US10199116B2 (en) | 2010-02-17 | 2019-02-05 | Samsung Electronics Co., Ltd. | Non-volatile memory devices, operating methods thereof and memory systems including the same |
US8929145B2 (en) | 2010-02-18 | 2015-01-06 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, programming method thereof and memory system including the same |
CN102315173A (zh) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | 三维多值非挥发存储器的制备方法 |
US11681616B2 (en) | 2010-08-20 | 2023-06-20 | Samsung Electronics Co, Ltd. | Address scheduling methods for non-volatile memory devices with three-dimensional memory cell arrays |
US9947416B2 (en) | 2010-08-26 | 2018-04-17 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof and memory system including the same |
US9881685B2 (en) | 2010-08-26 | 2018-01-30 | Samsung Electronics Co., Ltd. | Nonvolatile memory device, operating method thereof and memory system including the same |
CN102915955B (zh) * | 2011-08-04 | 2016-09-07 | 三星电子株式会社 | 半导体器件及其制造方法 |
CN102915955A (zh) * | 2011-08-04 | 2013-02-06 | 三星电子株式会社 | 半导体器件及其制造方法 |
CN103943572B (zh) * | 2013-01-23 | 2017-07-28 | 旺宏电子股份有限公司 | 集成电路装置及其制造方法 |
CN103943572A (zh) * | 2013-01-23 | 2014-07-23 | 旺宏电子股份有限公司 | 集成电路装置及其制造方法 |
US9741438B2 (en) | 2013-09-16 | 2017-08-22 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and program method thereof |
CN104752364B (zh) * | 2015-03-23 | 2017-08-25 | 武汉新芯集成电路制造有限公司 | 3d闪存的制造方法 |
CN104752364A (zh) * | 2015-03-23 | 2015-07-01 | 武汉新芯集成电路制造有限公司 | 3d闪存的制造方法 |
CN107452746B (zh) * | 2016-04-25 | 2023-06-06 | 三星电子株式会社 | 三维半导体器件 |
CN107452746A (zh) * | 2016-04-25 | 2017-12-08 | 三星电子株式会社 | 三维半导体器件 |
CN109754837A (zh) * | 2017-11-07 | 2019-05-14 | 三星电子株式会社 | 具有三维存储单元阵列的非易失存储器件的地址调度方法 |
CN112768458A (zh) * | 2021-01-29 | 2021-05-07 | 长江存储科技有限责任公司 | 一种3d nand存储器件及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
TW200828577A (en) | 2008-07-01 |
CN100573888C (zh) | 2009-12-23 |
US8318602B2 (en) | 2012-11-27 |
US7952136B2 (en) | 2011-05-31 |
KR100989231B1 (ko) | 2010-10-20 |
JP2008103429A (ja) | 2008-05-01 |
KR20090038412A (ko) | 2009-04-20 |
KR100938514B1 (ko) | 2010-01-25 |
KR20080034816A (ko) | 2008-04-22 |
TWI355071B (en) | 2011-12-21 |
US20110189853A1 (en) | 2011-08-04 |
US20080099819A1 (en) | 2008-05-01 |
JP5100080B2 (ja) | 2012-12-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100573888C (zh) | 非易失性半导体存储装置及其制造方法 | |
US11903205B2 (en) | Method for reading data of a first memory cell transistor of a nonvolatile semiconductor memory device | |
US8363481B2 (en) | Non-volatile semiconductor memory device and method of making the same | |
US7821058B2 (en) | Nonvolatile semiconductor memory and method for manufacturing the same | |
JP4768557B2 (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
US6462375B1 (en) | Scalable dual-bit flash memory cell and its contactless flash memory array | |
US8203187B2 (en) | 3D memory array arranged for FN tunneling program and erase | |
US10643709B2 (en) | Methods and operating a 3D memory device | |
US7045423B2 (en) | Non-volatile semiconductor memory device with multi-layer gate structure | |
EP2312624B1 (en) | NOR EEPROM device comprising memory cells with one memory transistor and one selection transistor | |
US20070257299A1 (en) | NOR Flash Memory and Fabrication Process | |
US6781186B1 (en) | Stack-gate flash cell structure having a high coupling ratio and its contactless flash memory arrays | |
US20070126028A1 (en) | Low resistance void-free contacts | |
US8178412B2 (en) | Semiconductor memory device and method of manufacturing the same | |
US6621119B1 (en) | Isolated stack-gate flash cell structure and its contactless flash memory arrays | |
CN104916643B (zh) | 非易失性半导体存储装置 | |
US20100001401A1 (en) | Semiconductor device including interconnect layer made of copper |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20170803 Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Toshiba Corp. |
|
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: Tokyo, Japan Patentee after: Kaixia Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. Address after: Tokyo, Japan Patentee after: TOSHIBA MEMORY Corp. Address before: Tokyo, Japan Patentee before: Japanese businessman Panjaya Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20211012 Address after: Tokyo, Japan Patentee after: Japanese businessman Panjaya Co.,Ltd. Address before: Tokyo, Japan Patentee before: TOSHIBA MEMORY Corp. |