CN101090124B - 半导体器件 - Google Patents

半导体器件 Download PDF

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Publication number
CN101090124B
CN101090124B CN2006100944920A CN200610094492A CN101090124B CN 101090124 B CN101090124 B CN 101090124B CN 2006100944920 A CN2006100944920 A CN 2006100944920A CN 200610094492 A CN200610094492 A CN 200610094492A CN 101090124 B CN101090124 B CN 101090124B
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CN
China
Prior art keywords
region
film transistor
channel
film
channel thin
Prior art date
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Expired - Lifetime
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CN2006100944920A
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English (en)
Chinese (zh)
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CN101090124A (zh
Inventor
山崎舜平
竹村保彦
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN101090124A publication Critical patent/CN101090124A/zh
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Publication of CN101090124B publication Critical patent/CN101090124B/zh
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Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H10D30/6715—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes characterised by the doping profiles, e.g. having lightly-doped source or drain extensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0314—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral top-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/149—Source or drain regions of field-effect devices
    • H10D62/151—Source or drain regions of field-effect devices of IGFETs 

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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
CN2006100944920A 1993-01-18 1994-01-18 半导体器件 Expired - Lifetime CN101090124B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP23287/1993 1993-01-18
JP2328793 1993-01-18
JP323117/1993 1993-11-29
JP32311793A JP3437863B2 (ja) 1993-01-18 1993-11-29 Ｍｉｓ型半導体装置の作製方法

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
CNB2004100422940A Division CN1297007C (zh) 1993-01-18 1994-01-18 半导体器件
CN94101918A Division CN1058108C (zh) 1993-01-18 1994-01-18 Mis半导体器件的制造方法

Publications (2)

Publication Number Publication Date
CN101090124A CN101090124A (zh) 2007-12-19
CN101090124B true CN101090124B (zh) 2011-11-02

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ID=26360618

Family Applications (4)

Application Number Title Priority Date Filing Date
CN2006100944920A Expired - Lifetime CN101090124B (zh) 1993-01-18 1994-01-18 半导体器件
CN94101918A Expired - Lifetime CN1058108C (zh) 1993-01-18 1994-01-18 Mis半导体器件的制造方法
CNB2004100422940A Expired - Lifetime CN1297007C (zh) 1993-01-18 1994-01-18 半导体器件
CNB981159605A Expired - Lifetime CN1156016C (zh) 1993-01-18 1998-07-07 金属绝缘体半导体类型的半导体器件及其制造方法

Family Applications After (3)

Application Number Title Priority Date Filing Date
CN94101918A Expired - Lifetime CN1058108C (zh) 1993-01-18 1994-01-18 Mis半导体器件的制造方法
CNB2004100422940A Expired - Lifetime CN1297007C (zh) 1993-01-18 1994-01-18 半导体器件
CNB981159605A Expired - Lifetime CN1156016C (zh) 1993-01-18 1998-07-07 金属绝缘体半导体类型的半导体器件及其制造方法

Country Status (5)

Country Link
US (5) US5627084A (https=)
JP (1) JP3437863B2 (https=)
KR (1) KR0145458B1 (https=)
CN (4) CN101090124B (https=)
TW (1) TW234771B (https=)

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JPH06267982A (ja) 1994-09-22
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KR0145458B1 (ko) 1998-08-17
US5627084A (en) 1997-05-06
CN1092556A (zh) 1994-09-21
TW234771B (https=) 1994-11-21
US6995432B2 (en) 2006-02-07
US6489632B1 (en) 2002-12-03
US20050250266A1 (en) 2005-11-10
JP3437863B2 (ja) 2003-08-18
US7408233B2 (en) 2008-08-05
US20030107036A1 (en) 2003-06-12
CN1219775A (zh) 1999-06-16
CN1538522A (zh) 2004-10-20
US5939731A (en) 1999-08-17
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CN1297007C (zh) 2007-01-24

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