BR112014028704A8 - Dispositivos optoeletrônicos com perovskitas organometálicas com ânions mistos - Google Patents

Dispositivos optoeletrônicos com perovskitas organometálicas com ânions mistos

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Publication number
BR112014028704A8
BR112014028704A8 BR112014028704A BR112014028704A BR112014028704A8 BR 112014028704 A8 BR112014028704 A8 BR 112014028704A8 BR 112014028704 A BR112014028704 A BR 112014028704A BR 112014028704 A BR112014028704 A BR 112014028704A BR 112014028704 A8 BR112014028704 A8 BR 112014028704A8
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Prior art keywords
anions
perovskite
anion mixture
mixture
different
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BR112014028704A
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English (en)
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BR112014028704B1 (pt
BR112014028704A2 (pt
Inventor
Snaith Henry
Lee Michael
Murakami Takuro
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Isis Innovation
Univ Oxford Innovation Ltd
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Application filed by Isis Innovation, Univ Oxford Innovation Ltd filed Critical Isis Innovation
Publication of BR112014028704A2 publication Critical patent/BR112014028704A2/pt
Publication of BR112014028704A8 publication Critical patent/BR112014028704A8/pt
Publication of BR112014028704B1 publication Critical patent/BR112014028704B1/pt

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/22—Tin compounds
    • C07F7/2284—Compounds with one or more Sn-N linkages
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
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    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H10K30/151—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2 the wide bandgap semiconductor comprising titanium oxide, e.g. TiO2
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    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/20—Light-sensitive devices
    • H01G9/2027—Light-sensitive devices comprising an oxide semiconductor electrode
    • H01G9/2031—Light-sensitive devices comprising an oxide semiconductor electrode comprising titanium oxide, e.g. TiO2
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    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/102—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising tin oxides, e.g. fluorine-doped SnO2
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    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/542—Dye sensitized solar cells
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    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Inorganic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Luminescent Compositions (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Devices (AREA)
  • Control Of Motors That Do Not Use Commutators (AREA)
  • Undergarments, Swaddling Clothes, Handkerchiefs Or Underwear Materials (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

DISPOSITIVOS OPTOELETRÔNICOS COM PEROVSKITAS ORGANOMETÁLICAS COM ÂNIONS MISTOS. A invenção proporciona um dispositivo optoeletrônico que compreende uma mistura de ânions de perovskita, em que a mistura de ânions de perovskita é composta por dois ou mais diferentes ânions selecionados entre ânions de haletos e ânions de calcogenetos. A invenção proporciona ainda uma mistura de de haletos e perovskita da fórmula (I) [A] [B] [X] 3 em que: [A] é, pelo menos, um cátion orgânico; [B] é pelo menos um cátion de metal bivalente; e [X] é dito dois ou mais diferentes ânions haleto. Num outro aspecto, o invento proporciona a utilização de uma mistura de ânions de perovskita como um sensibilizador num dispositivo optoeletrônico, em que a mistura de ânions de perovskita é composta por dois ou mais diferentes ânions selecionados de entre ânions de haletos e ânions calcogenetos. A invenção também fornece um material de fotossensibilização para um dispositivo optoeletrônico que compreende uma mistura de ânions de perovskita, em que a mistura de ânions de perovskita composto por dois ou mais diferentes ânions selecionados entre ânions de haletos e ânions calcogenetos.
BR112014028704-0A 2012-05-18 2013-05-20 dispositivos optoeletrônicos com perovskitas organometálicas com ânions mistos BR112014028704B1 (pt)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB1208793.8A GB201208793D0 (en) 2012-05-18 2012-05-18 Optoelectronic device
GB1208793.8 2012-05-18
PCT/GB2013/051306 WO2013171517A1 (en) 2012-05-18 2013-05-20 Optoelectronic devices with organometal perovskites with mixed anions

Publications (3)

Publication Number Publication Date
BR112014028704A2 BR112014028704A2 (pt) 2016-08-09
BR112014028704A8 true BR112014028704A8 (pt) 2018-01-02
BR112014028704B1 BR112014028704B1 (pt) 2018-11-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
BR112014028704-0A BR112014028704B1 (pt) 2012-05-18 2013-05-20 dispositivos optoeletrônicos com perovskitas organometálicas com ânions mistos

Country Status (16)

Country Link
US (4) US11038132B2 (pt)
EP (3) EP3024005B1 (pt)
JP (4) JP6182597B2 (pt)
KR (8) KR20230149852A (pt)
CN (6) CN110452261A (pt)
AU (3) AU2013261254B2 (pt)
BR (1) BR112014028704B1 (pt)
CY (2) CY1117578T1 (pt)
DK (2) DK3336866T3 (pt)
ES (2) ES2565673T5 (pt)
GB (1) GB201208793D0 (pt)
HR (2) HRP20160559T4 (pt)
PL (2) PL3336866T3 (pt)
PT (1) PT3336866T (pt)
WO (1) WO2013171517A1 (pt)
ZA (1) ZA201408425B (pt)

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