WO2005112577A2 - Methods to fabricate mosfet devices using selective deposition processes - Google Patents

Methods to fabricate mosfet devices using selective deposition processes Download PDF

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Publication number
WO2005112577A2
WO2005112577A2 PCT/US2005/016160 US2005016160W WO2005112577A2 WO 2005112577 A2 WO2005112577 A2 WO 2005112577A2 US 2005016160 W US2005016160 W US 2005016160W WO 2005112577 A2 WO2005112577 A2 WO 2005112577A2
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silicon
sccm
range
containing layer
flow rate
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French (fr)
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WO2005112577A3 (en
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Arkadaii V. Samoilov
Yihwan Kim
Errol Sanchez
Nicholas C. Dalida
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Applied Materials Inc
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Applied Materials Inc
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Priority to JP2007513252A priority patent/JP2007537601A/ja
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Publication of WO2005112577A3 publication Critical patent/WO2005112577A3/en
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Definitions

  • Embodiments of the invention generally relate to the field of semiconductor manufacturing processes and devices, more particular, to methods of depositing silicon-containing materials and films to form semiconductor devices.
  • Selective epitaxy processes permits near complete dopant activation with in-situ doping, therefore removes or at least reduces the need of a post annealing process.
  • Selective epitaxy processes and silicon etching processes may be used to accurately define junction depth.
  • the ultra shallow source/drain junction inevitably results in increased series resistance.
  • junction consumption during suicide formation further increases the series resistance.
  • an elevated source/drain may be epitaxially and selectively grown on the junction.
  • Selective epitaxial deposition provides growth of epilayers on silicon moats with no growth on dielectric areas.
  • Selective epitaxy may be used to deposit silicon or silicon-germanium materials in semiconductor devices, such as within elevated source/drains, source/drain extensions, contact plugs, and base layer deposition of bipolar devices.
  • a selective epitaxy process involves two competing chemical reactions, deposition reactions and etching reactions. The deposition and etching reactions occur simultaneously with relatively different reaction rates on single crystalline silicon surfaces and on dielectric surfaces.
  • a selective process window results in the deposition of a material on exposed silicon surfaces and not on exposed dielectric surfaces, by adjusting the concentration of an etchant gas (e.g., HCl).
  • an etchant gas e.g., HCl
  • MOSFET metal oxide semiconductor field effect transistor
  • One application is to deposit elevated source/drain (S/D) films by a selective epitaxy process.
  • the epitaxial layer is undoped silicon.
  • Another application is to fill recessed junction areas with epitaxial silicon-containing material, usually containing germanium, carbon or a dopant.
  • a method for forming a silicon-based material on a substrate includes exposing a substrate to a first process gas containing dichlorosilane, a germanium source, a first etchant and a carrier gas to deposit a first silicon-containing layer thereon and exposing the substrate to a second process gas containing silane and a second etchant to deposit a second silicon-containing layer thereon.
  • the first process gas is formed by combining dichlorosilane with a flow rate in a range from about 50 standard cubic centimeters per minute (seem) to about 200 seem, germane with a flow rate in a range from about 0.5 seem to about 5 seem, hydrogen chloride with a flow rate in a range from about 30 seem to about 500 seem and hydrogen with a flow rate in a range from about 10 standard liters per minute (slm) to about 30 slm.
  • the method provides the second process gas is formed by combining silane with a flow rate in a range from about 50 seem to about 200 seem and hydrogen chloride with a flow rate in a range from about 30 seem to about 500 seem.
  • the method further provides that the first silicon-containing layer and the second silicon-containing layer may be formed by a selective deposition process.
  • the first and second silicon-containing layers have a boron concentration within a range from about 5*10 19 atoms/cm 3 to about 2*10 20 atoms/cm 3 .
  • a method for forming a silicon-based material on a substrate in a process chamber which includes exposing a substrate to a process gas containing dichlorosilane, methylsilane, hydrogen chloride and hydrogen to deposit a silicon-containing layer thereon.
  • the process gas is formed by combining dichlorosilane with a flow rate in a range from about 20 seem to about 400 seem, methylsilane with a flow rate in a range from about 0.3 seem to about 5 seem, hydrogen chloride with a flow rate in a range from about 30 seem to about 500 seem and the hydrogen with a flow rate in a range from about 10 slm to about 30 slm.
  • a method for forming a silicon-based material on a substrate within a process chamber includes exposing a substrate to a process gas containing silane, methylsilane, hydrogen chloride, and hydrogen to deposit a silicon-containing layer thereon.
  • the process gas is formed by combining silane with a flow rate in a range from about 20 seem to about 400 seem, methylsilane with a flow rate in a range from about 0.3 seem to about 5 seem, hydrogen chloride with a flow rate in a range from about 30 seem to about 500 seem and hydrogen with a flow rate in a range from about 10 slm to about 30 slm.
  • the process gas is formed by combining silane with a flow rate in a range from about 50 seem to about 200 seem, germane with a flow rate in a range from about 0.5 seem to about 5 seem, methylsilane with a flow rate in a range from about 0.3 seem to about 5 seem, hydrogen chloride with a flow rate in a range from about 30 seem to about 500 seem and hydrogen with a flow rate in a range from about 10 slm to about 30 slm.
  • the silicon-containing layer may be deposited with a composition containing silicon at a concentration of at least about 50 atomic percent (at%), carbon at a concentration of about 2 at% or less and germanium at a concentration in a range from about 15 at% to about 30 at%.
  • a method for forming a silicon-based material on a substrate includes depositing a first silicon-containing layer on a substrate, depositing a second silicon-containing layer on the first silicon-containing layer and depositing a third silicon-containing layer on the second silicon-containing layer.
  • the first silicon-containing layer contains about 25 at% or less of germanium
  • the second silicon-containing layer contains about 25 at% or more of germanium
  • the third silicon-containing layer contains about 5 at% or less of germanium.
  • Figures 2A-2F show schematic illustrations of fabrication techniques for a source/drain extension device within a MOSFET.
  • Source/drain layer 12 may be formed by exposing lower layer 10 to an ion implantation process. Generally, lower layer 10 is doped n-type while source/drain layer 12 is doped p-type. Silicon-containing layer 13 is selectively and epitaxially deposited on source/drain layer 12 or directly on lower layer 10 and silicon- containing layer 14 is selectively and epitaxially deposited on silicon-containing layer 13 by the various deposition processes described herein. Gate oxide layer 18 bridges segmented silicon-containing layer 13 and usually contains silicon dioxide, silicon oxynitride or hafnium oxide.
  • gate oxide layer 18 Partially encompassing gate oxide layer 18 is spacer 16, which usually contains an isolation material such as a nitride/oxide stack (e.g., Si 3 N /Si0 2 /Si 3 N ).
  • Gate layer 22 e.g., polysilicon
  • protective layer 19 such as silicon dioxide, along the perpendicular sides, as in Figure 1A.
  • gate layer 22 may have spacer 16 and off-set layers 20 (e.g., Si 3 N ) disposed on either side.
  • Figure 1C depicts base layer 34 of a bipolar transistor deposited on n-type collector layer 32 disposed on lower layer 30.
  • Base layer 34 contains silicon-containing material epitaxially deposited by the processes described herein.
  • the device further includes isolation layer 33 (e.g., Si0 2 or Si 3 N 4 ), contact layer 36 (e.g., heavily doped poly-Si), off-set layer 38 (e.g., Si 3 N 4 ), and a second isolation layer 40 (e.g., Si0 2 or Si 3 N 4 ).
  • isolation layer 33 e.g., Si0 2 or Si 3 N 4
  • contact layer 36 e.g., heavily doped poly-Si
  • off-set layer 38 e.g., Si 3 N 4
  • second isolation layer 40 e.g., Si0 2 or Si 3 N 4
  • a source/drain extension is formed within a MOSFET wherein the silicon-containing layers are epitaxially and selectively deposited on the surface of the substrate.
  • Figure 2A depicts source/drain layer 132 formed by implanting ions into the surface of substrate 130. The segments of source/drain layer 132 are bridged by gate 136 formed on gate oxide layer 135 and subsequent deposition of off-set layer 134. A portion of the source/drain layer is etched and wet-cleaned, to produce recess 138, as in Figure 2B. A portion of gate 136 may also be etched, or optionally a hardmask may be deposited prior to etching to avoid removal of gate material.
  • Figure 2C illustrates silicon-containing layer 140 (e.g., epitaxial or monocrystalline material) selectively deposited on source/drain layer 132 and silicon- containing layer 142 (e.g., polycrystalline or amorphous crystalline material) selectively deposited on gate 136 by deposition process described herein.
  • silicon-containing layer 140 e.g., epitaxial or monocrystalline material
  • silicon-containing layer 142 e.g., polycrystalline or amorphous crystalline material
  • silicon-containing layers 140 and 142 are silicon-germanium containing layers with a germanium concentration in a range from about 1 atomic percent (at%) to about 50 at%, preferably about 25 at% or less. Multiple silicon-germanium containing layers containing varying amount of elements may be stacked to form silicon-containing layer 140 with a graded elemental concentration. For example, a first silicon-germanium layer may be deposited with a germanium concentration in a range from about 15 at% to about 25 at% and a second silicon-germanium layer may be deposited with a germanium concentration in a range from about 25 at% to about 35 at%.
  • a first silicon-germanium layer may be deposited with a germanium concentration in a range from about 15 at% to about 25 at%
  • a second silicon-germanium layer may be deposited with a germanium concentration in a range from about 25 at% to about 35 at%
  • a third silicon-containing layer may be deposited with no germanium or with a germanium concentration up to about 5 at%.
  • silicon-containing layer 140 Multiple layers containing silicon, silicon-germanium, silicon-carbon or silicon-germanium-carbon may be deposited in varying order to form graded elemental concentrations of silicon-containing layer 140.
  • the silicon-containing layers are generally doped with a dopant (e.g., B, As or P) having a concentration in a range from about 1 ⁇ 10 19 atoms/cm 3 to about 2.5x10 21 atoms/cm 3 , preferably from about 5x10 19 atoms/cm 3 to about 2x10 20 atoms/cm 3 .
  • Dopants added in individual layers of silicon-containing material form graded doped layers.
  • silicon- containing layer 140 is formed by depositing a first silicon-germanium containing layer with a dopant concentration (e.g., boron) in a range from about 5*10 19 atoms/cm 3 to about 1 ⁇ 10 20 atoms/cm 3 and a second silicon-germanium containing layer with a dopant concentration (e.g., boron) in a range from about 1 *10 20 atoms/cm 3 to about 2*10 20 atoms/cm 3 .
  • a dopant concentration e.g., boron
  • Figure 2D shows spacer 144, generally a nitride spacer (e.g., Si 3 N 4 ) deposited on the off-set layer 134.
  • Spacer 144 is usually deposited within a different process chamber than the process chamber used to deposit silicon-containing layer 140.
  • the substrate may be exposed to ambient conditions, such as atmospheric air at room temperature containing water and oxygen.
  • the substrate may be exposed to ambient conditions a second time prior to depositing silicon-containing layers 146 and 148.
  • an epitaxial layer (not shown) containing no germanium or a minimal concentration of germanium (e.g., less than about 5 at%) is deposited on top of layer 140 prior to exposing the substrate to ambient conditions.
  • the native oxides that are formed by the ambient conditions are removed easier from epitaxial layers containing minimal germanium concentrations than from an epitaxial layer formed with a germanium concentration greater than about 5 at%.
  • FIG. 2E depicts elevated layer 148 epitaxially and selectively deposited from silicon-containing material, as described herein. Elevated layer 148 is deposited on layer 140 (e.g., doped SiGe) while polysilicon is deposited on the silicon-containing layer 142 to produce polysilicon layer 146. Depending on the elemental concentrations of silicon-containing layer 142 and polysilicon deposited thereto, the elemental concentrations of polysilicon layer 146 will inheritably contain these elemental concentrations, including graded concentrations when both layers are different.
  • layer 140 e.g., doped SiGe
  • elevated layer 148 is epitaxially deposited silicon containing little or no germanium or carbon. However, in another embodiment, elevated layer 148 contains a low concentration of germanium or carbon. For example, elevated layer 148 may have about 5 at% or less germanium. In another example, elevated layer 148 may have about 2 at% or less carbon. Elevated layer 148 may also be doped with a dopant, such as boron, arsenic or phosphorus. [0034] In the next step shown in Figure 2F, a metal layer 154 is deposited over the features and the device is exposed to an annealing process. The metal layer 154 may include cobalt, nickel or titanium, among other metals.
  • polysilicon layer 146 and elevated layer 148 are converted to metal suicide layers, 150 and 152, respectively.
  • metal suicide layers 150 and 152 respectively.
  • cobalt may be deposited as metal layer 154 and is converted to metal suicide layers 150 and 152 containing cobalt suicide during an annealing process.
  • the silicon-containing material may be heavily doped with the in-situ dopants. Therefore, annealing steps of the prior art may be omitted and the overall throughput is shorter. An increase of carrier mobility along the channel and subsequent drive current is achieved with the optional addition of germanium and/or carbon into the silicon-containing material layer. Selectively grown epilayers of the silicon-containing material above the gate oxide level can compensate junction consumption during the silicidation, which can relieve concerns of high series resistance of ultra shallow junctions. These two applications can be implemented together as well as solely for CMOS device fabrication.
  • Silicon-containing materials formed by the deposition processes here may be to deposit silicon-containing films used by Bipolar (e.g., base, emitter, collector, emitter contact), BiCMOS (e.g., base, emitter, collector, emitter contact) and CMOS (e.g., channel, source/drain, source/drain extension, elevated source/drain, substrate, strained silicon, silicon on insulator and contact plug).
  • Bipolar e.g., base, emitter, collector, emitter contact
  • CMOS e.g., channel, source/drain, source/drain extension, elevated source/drain, substrate, strained silicon, silicon on insulator and contact plug.
  • Other uses of the silicon-containing materials films may include gate, base contact, collector contact, emitter contact or elevated source/drain.
  • a silicon-containing film is epitaxially grown as a silicon film.
  • a substrate e.g., 300 mm OD
  • a silicon precursor e.g., silane or dichlorosilane
  • a carrier gas e.g., H 2 and/or N 2
  • an etchant e.g., HCl
  • the flow rate of the silicon precursor is in a range from about 5 standard cubic centimeters per minute (sccm) to about 500 seem, preferably from about 50 seem to about 200 seem.
  • the flow rate of the carrier gas is in a range from about 10 standard liters per minute (slm) to about 30 slm.
  • the flow rate of the etchant is in a range from about 5 sccm to about 1 ,000 sccm, preferably from about 30 sccm to about 500 sccm.
  • the process chamber is maintained with a pressure in a range from about 0.1 Torr to about 200 Torr, preferably from about 1 Torr to about 50 Torr.
  • the substrate is heated at a temperature in a range from about 500°C to about 1 ,000°C, preferably from about 600°C to about 900°C, more preferably from about 650°C to about 750°C, for example about 720°C.
  • the mixture of reagents is thermally driven to react and epitaxially deposit crystalline silicon.
  • the etchant removes any deposited amorphous silicon or polycrystalline silicon from dielectric features on the surface of the substrate.
  • the process is conducted to form the deposited silicon-containing film with a thickness in a range from about 10 A to about 3,000 A, for example, from about 40 A to about 100 A.
  • the deposited silicon-containing film has a thickness in a range from about 200 A to about 600 A.
  • the silicon-containing film has a thickness greater than 500 A, such as about 1 ,000 A.
  • Etchants are used to provide select areas of a feature on a substrate surface to be free of deposited silicon-containing materials.
  • the etchant removes amorphous silicon or polysilicon growth that forms on the features at a faster rate than the etchant removes crystalline silicon growth from the crystalline surfaces, thus achieving selective epitaxial growth or deposition.
  • Etchants that are useful during deposition processes as described herein include HCl, HF, HBr, Si2CI 6 , SiCI , CI 2 SiH 2 , CCU, Cl 2 , derivatives thereof or combinations thereof.
  • silicon precursors besides silane and dichlorosilane, which are useful while depositing silicon-containing materials include higher silanes, halogenated silanes and organosilanes.
  • Higher silanes include the compounds with the empirical formula Si x H(2 X+2 ), such as disilane (Si 2 He), trisilane (Si 3 H 8 ), and tetrasilane (Si 4 H ⁇ o), as well as others.
  • Carrier gases are used throughout the processes and include hydrogen (H 2 ), argon (Ar), nitrogen (N 2 ), helium (He), forming gas (N 2 /H ) or combinations thereof.
  • hydrogen is used as a carrier gas.
  • nitrogen is used as a carrier gas.
  • a carrier gas during an epitaxial deposition process is conducted with neither hydrogen nor atomic hydrogen.
  • an inert gas is used as a carrier gas, such as nitrogen, argon, helium or combinations thereof.
  • Carrier gases may be combined in various ratios during some embodiments of the process.
  • a carrier gas may include nitrogen or argon to maintain available sites on the silicon-containing material film.
  • the presence of hydrogen on the silicon-containing material surface limits the number of available sites (i.e., passivates) for silicon or silicon-germanium to grow when an abundance of hydrogen is used as a carrier gas. Consequently, a passivated surface limits the growth rate at a given temperature, particularly at lower temperatures (e.g., ⁇ 650°C). Therefore, a carrier gas of nitrogen and/or argon may be used during a process at lower temperature and reduce the thermal budget without sacrificing growth rate.
  • a silicon-containing film is epitaxially grown as a silicon-germanium film.
  • a substrate e.g., 300 mm OD
  • a silicon precursor e.g., silane or dichlorosilane
  • a carrier gas e.g., H 2 and/or N2
  • a germanium source e.g., GeH 4
  • an etchant e.g., HCl
  • the flow rate of the silicon precursor is in a range from about 5 sccm to about 500 sccm, preferably from about 50 sccm to about 200 sccm.
  • the flow rate of the carrier gas is in a range from about 10 slm to about 30 slm.
  • the flow rate of the germanium source is in a range from about 0.1 sccm to about 10 sccm, preferably from about 0.5 sccm to about 5 sccm.
  • the flow rate of the etchant is in a range from about 5 sccm to about 1 ,000 sccm, preferably from about 30 sccm to about 500 sccm.
  • the process chamber is maintained with a pressure in a range from about 0.1 Torr to about 200 Torr, preferably from about 1 Torr to about 5 Torr, for example, about 3 Torr.
  • germanium sources or precursors, besides germane, that are useful while depositing silicon-containing materials include higher germanes and organogermanes.
  • Higher germanes include the compounds with the empirical formula Ge x H(2 X +2), such as digermane (Ge 2 H 6 ), trigermane (Ge 3 H 8 ) and tetragermane (Ge H ⁇ o), as well as others.
  • R methyl, ethyl, propyl or butyl, such as methylgermane ((CH 3 )GeH 3 ), dimethylgermane ((CH 3 ) 2 GeH 2 ), ethylgermane ((CH 3 CH 2 )GeH 3 ), methyldigermane ((
  • Germanes and organogermane compounds have been found to be an advantageous germanium sources and carbon sources during embodiments of the present invention to incorporate germanium and carbon in to the deposited silicon-containing materials, namely silicon-germanium and silicon-germanium-carbon materials.
  • Germanium sources are often mixed with a carrier gas (e.g., H 2 ) to dilute and therefore better control the germanium doses.
  • a germanium source with a flow rate in a range from about 0.5 sccm to about 5 sccm is equivalent to a flow of about 1% germanium source in a carrier gas with a flow rate in a range from about 50 sccm to about 500 sccm.
  • the flow rate of germanium source ignores the flow rate of the carrier gas.
  • the substrate is heated to a temperature in a range from about 500°C to about 1 ,000°C, preferably from about 700°C to about 900°C.
  • the mixture of reagents is thermally driven to react and epitaxially deposit doped silicon films.
  • the etchant removes any deposited amorphous silicon or polycrystalline silicon from dielectric features upon the surface of the substrate.
  • the process is conducted to form the deposited, doped silicon-containing film with a thickness in a range from about 10 A to about 3,000 A, for example, from about 40 A to about 100 A. In another example, the deposited silicon-containing film has a thickness in a range from about 200 A to about 600 A.
  • the silicon-containing film has a thickness greater than 500 A, such as about 1 ,000 A.
  • the dopant concentration may be graded within the silicon film, preferably graded with a higher dopant concentration in the lower portion of the silicon film than in the upper portion of the silicon film.
  • Dopants provide the deposited silicon-containing materials with various conductive characteristics, such as directional electron flow in a controlled and desired pathway required by the electronic device. Films of the silicon-containing materials are doped with particular dopants to achieve the desired conductive characteristic.
  • the silicon-containing material is doped p-type, such as by using diborane to add boron at a concentration in a range from about 10 15 atoms/cm 3 to about 10 21 atoms/cm 3 .
  • the p-type dopant has a concentration of at least 5x10 19 atoms/cm 3 .
  • the p-type dopant is in a range from about 1 ⁇ 10 20 atoms/cm 3 to about 2.5x10 21 atoms/cm 3 .
  • the silicon-containing material is doped n-type, such as with phosphorus and/or arsenic to a concentration in a range from about 10 15 atoms/cm 3 to about 10 21 atoms/cm 3 .
  • Alkylboranes may include trimethylborane ((CH 3 ) 3 B), dimethylborane ((CFfefeBH), triethylborane ((CH 3 CH 2 ) 3 B), diethylborane ((CH 3 CH 2 ) 2 BH), derivatives thereof, complexes thereof or combinations thereof.
  • Alkylphosphines include trimethylphosphine ((CH 3 ) 3 P), dimethylphosphine ((CH 3 ) 2 PH), triethylphosphine ((CH 3 CH 2 )3P) and diethylphosphine ((CH 3 CH 2 ) 2 PH), derivatives thereof, complexes thereof or combinations thereof.
  • Dopants are often mixed with a carrier gas (e.g., H 2 ) to dilute and therefore better control the doping doses.
  • a flow rate of dopant in a range from about 0.2 sccm to about 2 sccm is equivalent to a flow of 1% dopant in a carrier gas with a flow rate in a range from about 20 sccm to about 200 sccm.
  • the flow rate of dopant precursor ignores the flow rate of the carrier gas.
  • a silicon-containing film is epitaxially grown to produce a doped silicon-germanium film.
  • a substrate e.g., 300 mm OD
  • a silicon precursor e.g., silane or dichlorosilane
  • a carrier gas e.g., H 2 and/or N 2
  • a germanium source e.g., GeH 4
  • a dopant e.g., B 2 H 6
  • an etchant e.g., HCl
  • the flow rate of the silicon precursor is in a range from about 5 sccm to about 500 sccm, preferably from about 50 sccm to about 200 sccm.
  • the flow rate of the carrier gas is in a range from about 10 slm to about 30 slm.
  • the flow rate of the germanium source is in a range from about 0.1 sccm to about 10 sccm, preferably from about 0.5 sccm to about 5 sccm.
  • the flow rate of the dopant precursor is in a range from about 0.01 sccm to about 10 sccm, preferably from about 0.2 sccm to about 3 sccm.
  • the flow rate of the etchant is in a range from about 5 sccm to about 1 ,000 sccm, preferably from about 30 sccm to about 500 sccm.
  • the process chamber is maintained at a pressure in a range from about 0.1 Torr to about 200 Torr, preferably from about 1 Torr to about 5 Torr, for example, about 3 Torr.
  • the substrate is heated to a temperature in a range from about 500°C to about 1 ,000°C, preferably from about 700°C to about 900°C.
  • the reagent mixture is thermally driven to react and epitaxially deposit a silicon- containing material, namely a silicon germanium film.
  • the etchant removes any deposited amorphous silicon-germanium from features upon the surface of the substrate.
  • the process is conducted to form the doped silicon-germanium film with a thickness in a range from about 10 A to about 3,000 A, for example, from about 40 A to about 100 A.
  • the deposited silicon-containing film has a thickness in a range from about 200 A to about 600 A.
  • the silicon-containing film has a thickness greater than 500 A, such as about 1 ,000 A.
  • a silicon-containing film is epitaxially grown as a silicon-carbon film.
  • a substrate e.g., 300 mm OD
  • a silicon precursor e.g., silane or dichlorosilane
  • a carrier gas e.g., H 2 and/or N 2
  • a carbon source e.g., CHsSiHs
  • an etchant e.g., HCl
  • the flow rate of the silicon precursor is in a range from about 5 sccm to about 500 sccm, preferably from about 50 sccm to about 200 sccm.
  • the process is conducted to form the deposited silicon-carbon film with a thickness in a range from about 10 A to about 3,000 A, for example, from about 40 A to about 100 A.
  • the deposited silicon-containing film has a thickness in a range from about 200 A to about 600 A.
  • the silicon-containing film has a thickness greater than 500 A, such as about 1 ,000 A.
  • the carbon concentration may be graded within the silicon-carbon film, preferably graded with a higher carbon concentration in the lower portion of the silicon-carbon film than in the upper portion of the silicon-carbon film.
  • the carbon concentration of the silicon-carbon film is in a range from about 200 ppm to about 5 at%, preferably from about 1 at% to about 3 at%, for example 1.5 at%.
  • a silicon-containing film is epitaxially grown to produce a doped silicon-carbon film.
  • a substrate e.g., 300 mm OD
  • a silicon precursor e.g., silane or dichlorosilane
  • a carrier gas e.g., H 2 and/or N 2
  • a carbon source e.g., CH 3 SiH 3
  • a dopant e.g., B 2 H 6
  • an etchant e.g., HCl
  • the flow rate of the silicon precursor is in a range from about 5 sccm to about 500 sccm, preferably from about 50 sccm to about 200 sccm.
  • the flow rate of the carrier gas is in a range from about 10 slm to about 30 slm.
  • the flow rate of the carbon source is in a range from about 0.1 sccm to about 15 sccm, preferably from about 0.3 sccm to about 5 sccm.
  • the flow rate of the dopant precursor is in a range from about 0.01 sccm to about 10 sccm, preferably from about 0.2 sccm to about 3 sccm.
  • the flow rate of the etchant is in a range from about 5 sccm to about 1 ,000 sccm, preferably from about 30 sccm to about 500 sccm.
  • the process chamber is maintained at a pressure in a range from about 0.1 Torr to about 200 Torr, preferably from about 1 Torr to about 5 Torr, for example, about 3 Torr.
  • the substrate is heated to a temperature in a range from about 500°C to about 1 ,000°C, preferably from about 700°C to about 900°C.
  • the reagent mixture is thermally driven to react and epitaxially deposit a silicon- containing material, namely a doped silicon carbon film.
  • the etchant removes any deposited amorphous silicon-carbon from features upon the surface of the substrate.
  • a silicon precursor e.g., silane or dichlorosilane
  • a carrier gas e.g., H 2 and/or N 2
  • a germanium source e.g., GeH
  • a carbon source e.g., CHsSiHs
  • an etchant e.g., HCl
  • the flow rate of the silicon precursor is in a range from about 5 sccm to about 500 sccm, preferably from about 50 sccm to about 200 sccm.
  • the flow rate of the carrier gas is from about 10 slm to about 30 slm.
  • a silicon-containing material film is epitaxially grown as a doped silicon-germanium-carbon film.
  • a substrate e.g., 300 mm OD
  • a silicon precursor e.g., silane or dichlorosilane
  • a carrier gas e.g., H 2 and/or N 2
  • a germanium source e.g., GeH 4
  • a carbon source e.g., CHsSiHs
  • a dopant e.g., B 2 He
  • an etchant e.g., HCl
  • the flow rate of the silicon precursor is in a range from about 5 sccm to about 500 sccm, preferably from about 50 sccm to about 200 sccm.
  • the flow rate of the carrier gas is from about 10 slm to about 30 slm.
  • the flow rate of the germanium source is from about 0.1 sccm to about 10 sccm, preferably from about 0.5 sccm to about 5 sccm.
  • the flow rate of the carbon source is from about 0.1 sccm to about 50 sccm, preferably from about 0.3 sccm to about 5 sccm.
  • the flow rate of the dopant precursor is from about 0.01 sccm to about 10 sccm, preferably from about 0.2 sccm to about 3 sccm.
  • the flow rate of the etchant is from about 5 sccm to about 1 ,000 sccm, preferably from about 30 sccm to about 500 sccm.
  • the process chamber is maintained with a pressure from about 0.1 Torr to about 200 Torr, preferably from about 1 Torr to about 5 Torr, for example, about 3 Torr.
  • the substrate is heated to a temperature in a range from about 500°C to about 1 ,000°C, preferably from about 500°C to about 700°C.
  • the reagent mixture is thermally driven to react and epitaxially deposit a silicon-containing material, namely a doped silicon germanium carbon film.
  • the etchant removes any deposited amorphous or polycrystalline silicon-germanium-carbon materials from dielectric features upon the surface of the substrate.
  • a second silicon-containing film is epitaxially grown by using dichlorosilane, subsequently to depositing any of the silicon- containing materials aforementioned in the above disclosure.
  • a substrate e.g., 300 mm OD
  • a silicon precursor e.g., CI 2 SiH 2
  • a carrier gas e.g., H 2 and/or N 2
  • a germanium source e.g., GeH 4
  • an etchant e.g., HCl
  • a silicon-containing laminate film may be deposited in sequential layers of silicon-containing material by altering the silicon precursor between silane and dichlorosilane.
  • a laminate film of about 2,000 A is formed by depositing four silicon-containing layers (each of about 500 A), such that the first and third layers are deposited using dichlorosilane and the second and fourth layers are deposited using silane.
  • the first and third layers are deposited using silane and the second and fourth layers are deposited using dichlorosilane.
  • the thickness of each layer is independent from each other; therefore, a laminate film may have various thicknesses of the silicon-containing layers.
  • Surfaces or substrates may include wafers, films, layers and materials with dielectric, conductive and barrier properties and include polysilicon, silicon on insulators (SOI), strained and unstrained lattices. Pretreatment processes of surfaces may include a polishing process, an etching process, a reduction process, an oxidation process, a hydroxylation process, an annealing process and a baking process.
  • wafers are dipped into a 1 % HF solution, dried and heated within a hydrogen atmosphere at 800°C.
  • silicon-containing materials include a germanium concentration within a range from about 0 at% to about 95 at%.
  • MOSFET devices formed by processes described herein may contain a PMOS component or a NMOS component.
  • the PMOS component, with a p-type channel, has holes that are responsible for channel conduction, while the NMOS component, with a n-type channel, has electrons that are responsible channel conduction. Therefore, for example, a silicon-containing material such as silicon- germanium may be deposited in a recessed area to form a PMOS component. In another example, a silicon-containing film such as silicon-carbon may be deposited in a recessed area to form a NMOS component. Silicon-germanium is used for PMOS application for several reasons. A silicon-germanium material incorporates more boron than silicon alone, thus the junction resistivity may be lowered. Also, the silicon-germanium/silicide layer interface at the substrate surface has a lower Schottky barrier than the silicon/silicide interface.
  • the preferred process of the present invention is to use thermal CVD to epitaxially grow or deposit the silicon- containing material, whereas the silicon-containing material includes silicon (Si), silicon-germanium (SiGe), silicon-carbon (SiC), silicon-germanium-carbon (SiGeC), doped variants thereof or combinations thereof.
  • Dichlorosilane (100 sccm) and germane (1 % GeH 4 in H 2 , 280 sccm) were added to the chamber at 3 Torr and 725°C.
  • hydrogen chloride (190 sccm) and diborane (1 % in H 2 , 150 sccm) were delivered to the chamber.
  • the substrate was maintained at 725°C.
  • Deposition was conducted for about 5 minutes to form a 500 A silicon-germanium film with a germanium concentration of about 20 at% and the boron concentration of about 1.0 ⁇ 10 20 cm "3 .
  • the substrate was removed from the process chamber and exposed to the ambient air.
  • the substrate was loaded into a second deposition chamber (Epi Centura ® chamber) and heated to 800°C.
  • the substrate was exposed to a process gas containing silane (100 sccm) and hydrogen chloride (250 sccm) for about 10 minutes to selectively deposit a silicon film on the silicon-germanium
  • Dichlorosilane (100 sccm) and germane (1% GeH in H 2 , 190 sccm) were added to the chamber at 3 Torr and 725°C.
  • hydrogen chloride (160 sccm) and diborane (1% in H 2 , 150 sccm) were delivered to the chamber.
  • the substrate was maintained at 725°C.
  • Deposition was conducted for 2 minutes to form a 100 A silicon-germanium film with a germanium concentration of 15 at% and the boron concentration of about 5.0x10 19 cm "3 .
  • a second silicon- germanium film was deposited to the first silicon-germanium film to form a graded- silicon-germanium film.
  • Example 3 SiC/Si stack: A substrate, Si ⁇ 100>, (e.g., 300 mm OD) was employed to investigate selective, monocrystalline film growth by CVD. A dielectric feature existed on the surface of the wafer. The wafer was prepared by subjecting to a 1 % HF dip for 45 seconds. The wafer was loaded into the deposition chamber (Epi Centura ® chamber) and baked in a hydrogen atmosphere at 800°C for 60 seconds to remove native oxide. A flow of carrier gas, hydrogen, was directed towards the substrate and the source compounds were added to the carrier flow.
  • Ether ® chamber the deposition chamber
  • Dichlorosilane (100 sccm) and methylsilane (1 % CH 3 SiH 3 in H 2 , 100 sccm) were added to the chamber at 3 Torr and 725°C.
  • hydrogen chloride (160 sccm) and diborane (1 % in H 2 , 150 sccm) were delivered to the chamber.
  • the substrate was maintained at 725°C.
  • Deposition was conducted for about 5 minutes to form a 500 A silicon- carbon film with a carbon concentration of about 1.25 at% and the boron concentration of about 1.0 ⁇ 10 20 cm “3 .
  • the substrate was removed from the process chamber and exposed to the ambient air.
  • the substrate was removed from the process chamber and exposed to the ambient air.
  • the substrate was loaded into a second deposition chamber (Epi Centura ® chamber) and heated to 800°C.
  • the substrate was exposed to a process gas containing silane (100 sccm) and hydrogen chloride (250 sccm) for about 10 minutes to selectively deposit a silicon film on the silicon-germanium-carbon film.

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US20050079692A1 (en) 2005-04-14
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TW200537592A (en) 2005-11-16

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