JP5287621B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5287621B2 JP5287621B2 JP2009209738A JP2009209738A JP5287621B2 JP 5287621 B2 JP5287621 B2 JP 5287621B2 JP 2009209738 A JP2009209738 A JP 2009209738A JP 2009209738 A JP2009209738 A JP 2009209738A JP 5287621 B2 JP5287621 B2 JP 5287621B2
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- 239000004065 semiconductor Substances 0.000 title claims description 42
- 239000013078 crystal Substances 0.000 claims description 62
- 239000012535 impurity Substances 0.000 claims description 61
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 31
- 229910052710 silicon Inorganic materials 0.000 claims description 31
- 239000010703 silicon Substances 0.000 claims description 31
- 238000009792 diffusion process Methods 0.000 claims description 13
- 229910003811 SiGeC Inorganic materials 0.000 claims description 4
- 230000000295 complement effect Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 130
- 108091006146 Channels Proteins 0.000 description 12
- 230000001133 acceleration Effects 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 12
- 229910021332 silicide Inorganic materials 0.000 description 10
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000002513 implantation Methods 0.000 description 9
- 150000002500 ions Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000005465 channeling Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
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- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823814—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
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- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
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- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
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- H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
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- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
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- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
キャリアガス(H2、N2、Ar、Heのいずれか)を5Pa〜1330Pa
SiH4を1Pa〜10Pa
GeH4を0.1Pa〜10Pa
B2H6を1×10−4Pa〜1×10−2Pa
HClを1Pa〜10Pa
となる雰囲気として成長を行うが、成長時間は1分〜40分である。
なお、Si1―xGexにおけるGe組成比xとしては、0.15〜0.3となる。
キャリアガス(H2、N2、Ar、Heのいずれか)を5Pa〜1330Pa
SiH4を1Pa〜10Pa
GeH4を0Pa〜0.4Pa
B2H6を1×10−4Pa〜1×10−2Pa
HClを1Pa〜10Pa
となる雰囲気として成長を行うが、成長時間は0分〜10分である。
(付記1)
一導電型シリコン基体と、
前記一導電型シリコン基体の表面に設けたゲート絶縁膜と
前記ゲート絶縁膜の上に設けたゲート電極と、
前記ゲート電極の両側の前記一導電型シリコン基体に設けた逆導電型エクステンション領域と、
前記逆導電型エクステンション領域に接するとともに、前記一導電型シリコン基体に形成された凹部に埋め込まれた逆導電型Si混晶層とを備えた半導体装置であって、
前記逆導電型Si混晶層が、前記凹部の底面上に形成された第1不純物濃度Si混晶層と、
前記第1不純物濃度Si混晶層上に形成され、Siの含有率が前記第1不純物濃度Si混晶層と同じである第2不純物濃度Si混晶層と、
前記第2不純物濃度Si混晶層上に形成された第3不純物濃度Si混晶層とを有し、
前記第2不純物濃度は、前記第1不純物濃度よりも高く、前記第3不純物濃度よりも高いことを特徴とする半導体装置。
(付記2)
前記逆導電型エクステンション領域と前記逆導電型Si混晶層との接触箇所以外において、前記逆導電型Si混晶層と前記一導電型シリコン基体との間に逆導電型拡散層が介在していることを特徴とする付記1に記載の半導体装置。
(付記3)
前記第3不純物濃度Si混晶層上にSiキャップ層を設けたことを特徴とする付記1または付記2に記載の半導体装置。
(付記4)
前記一導電型シリコン基体が、n型シリコン基体であり、且つ、前記逆導電型Si混晶層がSiを最大成分とするp型SiGe層であることを特徴とする付記1乃至付記3のいずれか1項に記載の半導体装置。
(付記5)
前記一導電型シリコン基体が、p型シリコン基体であり、且つ、前記逆導電型Si混晶層がSiを最大成分とするn型SiGeC層或いはn型SiC層のいずれかであることを特徴とする付記1乃至付記3のいずれか1項に記載の半導体装置。
(付記6)
付記4記載の半導体装置と付記5記載の半導体装置とを相補型半導体装置を構成するように各ゲート電極及び各ソース・ドレイン電極を接続したことを特徴とする半導体装置。
2 ゲート絶縁膜
3 ゲート電極
4 サイドウォール
5 逆導電型エクステンション領域
6 サイドウォール
7 逆導電型拡散層
8 低不純物濃度Si混晶層
9 高不純物濃度Si混晶層
10 低不純物濃度Si混晶層
11 p型シリコン基板
12 p型ウエル領域
13 n型ウエル領域
14 素子分離絶縁膜
15 ゲート絶縁膜
16 多結晶シリコン膜
17,25,28,33,36,40,52,67 レジストパターン
18,29,37 Bイオン
19 p型多結晶シリコン膜
20 n型多結晶シリコン膜
21 n型ゲート電極
22 p型ゲート電極
23,31 SiN膜
24 第1サイドウォール
26,34 Asイオン
27 n型エクステンション領域
30 p型エクステンション領域
32 第2サイドウォール
35 n型拡散領域
38 p型拡散領域
39,51 SiO2膜
41,43,53 リセス部
42,44,54 ゲートリセス部
45,46,49,50 p型SiGe層
47,48 p+ 型SiGe層
55,56,59,60 n型SiC層
57,58 n+型SiC層
61 Ni膜
62,63,64,65 Niシリサイド層
66 圧縮性絶縁膜
68 伸張性絶縁膜
69 層間絶縁膜
70,71 TiN膜
72,73 Wビア
81 n型ウエル領域
82 ゲート絶縁膜
83 ゲート電極
84,86 サイドウォール
85 p型エクステンション領域
87 p型拡散領域
86 p+型SiGe層
Claims (5)
- 一導電型シリコン基体と、
前記一導電型シリコン基体の表面に設けたゲート絶縁膜と
前記ゲート絶縁膜の上に設けたゲート電極と、
前記ゲート電極の両側の前記一導電型シリコン基体に設けた逆導電型エクステンション領域と、
前記逆導電型エクステンション領域に接するとともに、前記一導電型シリコン基体に形成された凹部に埋め込まれた逆導電型Si混晶層とを備えた半導体装置であって、
前記逆導電型Si混晶層が、前記凹部の底面上に形成された第1不純物濃度Si混晶層と、
前記第1不純物濃度Si混晶層上に形成され、Siの含有率が前記第1不純物濃度Si混晶層と同じである第2不純物濃度Si混晶層と、
前記第2不純物濃度Si混晶層上に形成された第3不純物濃度Si混晶層とを有し、
前記第2不純物濃度は、前記第1不純物濃度よりも高く、前記第3不純物濃度よりも高いことを特徴とする半導体装置。 - 前記逆導電型エクステンション領域と前記逆導電型Si混晶層との接触箇所以外において、前記逆導電型Si混晶層と前記一導電型シリコン基体との間に逆導電型拡散層が介在していることを特徴とする請求項1に記載の半導体装置。
- 前記一導電型シリコン基体が、n型シリコン基体であり、且つ、前記逆導電型Si混晶層がSiを最大成分とするp型SiGe層であることを特徴とする請求項1または請求項2に記載の半導体装置。
- 前記一導電型シリコン基体が、p型シリコン基体であり、且つ、前記逆導電型Si混晶層がSiを最大成分とするn型SiGeC層或いはn型SiC層のいずれかであることを特徴とする請求項1または請求項2に記載の半導体装置。
- 請求項3記載の半導体装置と請求項4記載の半導体装置とを相補型半導体装置を構成するように各ゲート電極及び各ソース・ドレイン電極を接続したことを特徴とする半導体装置。
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JP2013026382A (ja) * | 2011-07-20 | 2013-02-04 | Elpida Memory Inc | 半導体装置の製造方法 |
US8916428B2 (en) * | 2012-01-05 | 2014-12-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming a semiconductor device |
US8846476B2 (en) * | 2013-02-14 | 2014-09-30 | Globalfoundries Inc. | Methods of forming multiple N-type semiconductor devices with different threshold voltages on a semiconductor substrate |
US10134896B2 (en) * | 2013-03-01 | 2018-11-20 | Taiwan Semiconductor Manufacturing Co., Ltd. | Cyclic deposition etch chemical vapor deposition epitaxy to reduce EPI abnormality |
US9337337B2 (en) * | 2013-08-16 | 2016-05-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | MOS device having source and drain regions with embedded germanium-containing diffusion barrier |
WO2015057171A1 (en) | 2013-10-18 | 2015-04-23 | Agency For Science, Technology And Research | Semiconductor device fabrication |
US9691898B2 (en) | 2013-12-19 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Germanium profile for channel strain |
US10090392B2 (en) * | 2014-01-17 | 2018-10-02 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor device and manufacturing method thereof |
US9601574B2 (en) * | 2014-12-29 | 2017-03-21 | Taiwan Semiconductor Manufacturing Company, Ltd. | V-shaped epitaxially formed semiconductor layer |
US10580658B2 (en) * | 2016-04-13 | 2020-03-03 | Tokyo Electron Limited | Method for preferential oxidation of silicon in substrates containing silicon and germanium |
WO2018004521A1 (en) * | 2016-06-27 | 2018-01-04 | Intel Corporation | Broken bandgap contact |
US10026840B2 (en) * | 2016-10-13 | 2018-07-17 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structure of semiconductor device with source/drain structures |
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JP2003243532A (ja) | 2002-02-15 | 2003-08-29 | Toshiba Corp | 相補型半導体装置および相補型半導体装置の製造方法 |
US7132338B2 (en) * | 2003-10-10 | 2006-11-07 | Applied Materials, Inc. | Methods to fabricate MOSFET devices using selective deposition process |
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US7605042B2 (en) | 2005-04-18 | 2009-10-20 | Toshiba America Electronic Components, Inc. | SOI bottom pre-doping merged e-SiGe for poly height reduction |
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US7736982B2 (en) * | 2008-10-14 | 2010-06-15 | United Microelectronics Corp. | Method for forming a semiconductor device |
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